CN104733508A - 带静电保护结构的mosfet及其制备方法 - Google Patents
带静电保护结构的mosfet及其制备方法 Download PDFInfo
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CN201310700074.1A CN104733508B (zh) | 2013-12-18 | 2013-12-18 | 带静电保护结构的mosfet及其制备方法 |
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CN201310700074.1A CN104733508B (zh) | 2013-12-18 | 2013-12-18 | 带静电保护结构的mosfet及其制备方法 |
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CN104733508A true CN104733508A (zh) | 2015-06-24 |
CN104733508B CN104733508B (zh) | 2018-04-20 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111508950A (zh) * | 2020-04-09 | 2020-08-07 | 中国电子科技集团公司第五十五研究所 | 集成静电防护能力的碳化硅mosfet器件及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2653696Y (zh) * | 2003-08-21 | 2004-11-03 | 上海大学 | Mos功率管的栅极保护装置 |
CN1694264A (zh) * | 2004-04-30 | 2005-11-09 | 罗姆股份有限公司 | Mos晶体管以及具备该晶体管的半导体集成电路装置 |
US20060232898A1 (en) * | 2005-04-19 | 2006-10-19 | Nec Electronics Corporation | ESD protection circuit with SCR structure for semiconductor device |
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- 2013-12-18 CN CN201310700074.1A patent/CN104733508B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN2653696Y (zh) * | 2003-08-21 | 2004-11-03 | 上海大学 | Mos功率管的栅极保护装置 |
CN1694264A (zh) * | 2004-04-30 | 2005-11-09 | 罗姆股份有限公司 | Mos晶体管以及具备该晶体管的半导体集成电路装置 |
US20060232898A1 (en) * | 2005-04-19 | 2006-10-19 | Nec Electronics Corporation | ESD protection circuit with SCR structure for semiconductor device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111508950A (zh) * | 2020-04-09 | 2020-08-07 | 中国电子科技集团公司第五十五研究所 | 集成静电防护能力的碳化硅mosfet器件及其制造方法 |
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Effective date of registration: 20200102 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
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Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |