CN103650165B - 具有用于集中光伏应用的铜格栅的隧道结太阳能电池 - Google Patents

具有用于集中光伏应用的铜格栅的隧道结太阳能电池 Download PDF

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CN103650165B
CN103650165B CN201280033886.9A CN201280033886A CN103650165B CN 103650165 B CN103650165 B CN 103650165B CN 201280033886 A CN201280033886 A CN 201280033886A CN 103650165 B CN103650165 B CN 103650165B
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CN103650165A (zh
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傅建明
徐征
J·B·亨格
游晨涛
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Abstract

本发明的一个实施例提供光伏模块。光伏模块包括光学集中器和隧道结太阳能电池。隧道结太阳能电池包括基底层、位于基底层上方的量子隧道势垒（QTB）层、发射极层、前侧电极以及背侧电极。

Description

具有用于集中光伏应用的铜格栅的隧道结太阳能电池
技术领域
本公开总体涉及一种光伏***。更具体地，本公开涉及一种组合了隧道结太阳能电池与光学集中器的光伏***。
背景技术
由使用化石燃料引起的负面环境影响以及它们提高的成本已经导致对于更清洁、更廉价的备选能源的迫切需求。在不同形式的备选能源之中，太阳能已经因为其清洁和广泛可用性而受到青睐。
光伏（PV）***使用太阳能面板来将日光转换为电力。PV***包括多个部件，诸如光伏模块（或太阳能面板）、框架、电缆、和逆变器。PV模块的成本占据整个光伏***成本的极大部分。为了减少成本，已经使用各种方法来减少每个部件的成本以及改进光伏模块的效率。一种方法是使用将日光聚集至更小区域的集中光学元件，从而使用比***尺寸小的多的PV模块。因此，可以大大减少PV***内PV模块的成本。尽管存在附加的部件（诸如光学模块和***），但是整个***的成本仍然小于不具有集中光学元件的***。
实现具有集中光学元件的高效PV模块有许多挑战。当将日光聚集至更小区域时，其强度大大增大，导致太阳能电池的快速发热。因此，需要冷却。然而，将太阳能电池的温度冷却低至约20℃并不经济。相反，太阳能电池最可能将操作于升高的温度下。这是不期望的，因为半导体太阳能电池的能量转换效率随着温度上升而退化。对于常规的基于Si的太阳能电池而言退化尤其严重，因为它们的温度系数通常在-0.48和-0.5％/℃之间。尽管GaAs和其它基于III-V族半导体的太阳能电池在升高的温度下性能更好，但是更高的制造成本使得不那么期望需要它们。
日光集中的另一个问题在于电流拥挤效应。在太阳能电池中，首先由太阳能电池结构中吸收的光产生电流，随后由太阳能电池表面上金属格栅收集电流。日光的集中造成在金属格栅中的电流拥挤，其中电流随着集中比率几乎线性地增大。电流拥挤可以增大太阳能电池的串联电阻。因此，随着电流由于光集中而增大，太阳能电池效率因为增大的电阻损耗而降低。
此外，在传统太阳能电池中，使用印刷银膏制造前部金属格栅。为了使阴影最小，格栅宽度狭窄。丝网印刷的银格栅的高度通常限定为不大于30微米，并且截面形状是三角形。此外，由于膏中的添加剂（诸如玻璃砂或粘附剂），在烧结之后银膏的电阻率可以比纯银的电阻率高五至十倍。这些因素制约了金属格栅的串联电阻，并且不利地影响了太阳能电池效率。
发明内容
本发明的一个实施例提供了一种光伏模块。光伏模块包括光学集中器和隧道结太阳能电池。隧道结太阳能电池包括基底层、位于基底层上方的量子隧道势垒（QTB）层、发射极层、前侧电极和背侧电极。
在对实施例的变形例中，QTB层包括氧化硅（SiOx）、氢化SiOx、氮化硅（SiNx）、氢化SiNx、氧化铝（AlOx）、氮氧化硅（SiON）和氢化SiON中的至少一个。
在对实施例的变形例中，发射极层包括非晶Si（a-Si）和非晶SiC（a-SiC）中的至少一个。
在对实施例的变形例中，前侧电极包括前侧金属格栅，前侧金属格栅包括Cu和Ni中的至少一个。
在又一变形例中，使用镀制技术形成前侧金属格栅。
在对实施例的变形例中，前侧电极包括具有弯曲表面的金属格栅线，由此允许射到弯曲表面的入射光向下反射。
在对实施例的变形例中，隧道结太阳能电池进一步包括位于基底层下方的背表面场（BSF）层，并且BSF层包括非晶Si（a-Si）和非晶SiC（a-SiC）中的至少一个。
在对实施例的变形例中，隧道结太阳能电池进一步包括位于发射极层顶部上的透明导电氧化物（TCO）层。
在对实施例的变形例中，基底层包括单晶硅晶片和外延生长的晶体Si（c-Si）薄膜中的至少一个。
在对实施例的变形例中，隧道结太阳能电池进一步包括位于基底层下方的第二QTB层。
在对实施例的变形例中，发射极层背向入射光而位于基底层之下。
本发明的一个实施例包括光伏***。***包括太阳能电池模块以及被配置为集中接收到的日光的光学模块。太阳能电池模块包括多层半导体结构，面向入射光而位于多层半导体结构之上的前侧金属格栅，以及背侧电极。前侧金属格栅包括Cu和Ni中的至少一个。
附图说明
图1呈现示出了根据本发明实施例的示例性隧道结太阳能电池的图。
图2呈现示出了根据本发明实施例的制作隧道结太阳能电池的工艺的图。
图3呈现示出了根据本发明实施例的制作隧道结太阳能电池的工艺的图。
图4呈现示出了根据本发明实施例的示例性背部隧道结太阳能电池的图。
图5呈现示出了根据本发明实施例的示例性集中器光伏（CPV）模块的图。
具体实施方式
呈现以下描述以使得任何本领域技术人员做出并且使用实施例，并且在特定应用背景及其需求中提供以下描述。对于所公开实施例的各种修改对于本领域技术人员而言是明显的，并且本文限定的总体原理可以应用于其它实施例和应用而不脱离本公开的精神和范围。因此，本发明并不限定于所示实施例，而是符合与本文公开的原理和特征一致的最广的范围。
概述
本发明的实施例提供一种基于隧道结太阳能电池的集中器光伏（CPV）模块。集中器PV模块包括将照射在较大区域上的日光集中至较小区域的光学聚集机构，以及一个或多个隧道结太阳能电池。隧道结太阳能电池包括晶态硅（c-Si）堆叠、氧化物隧道势垒层和钝化层、以及非晶半导体层。此外，太阳能电池的前部金属格栅通过镀制铜而形成。该类型的CPV模块展现出高转换效率（高达24％）以及低温度系数（低至-0.20％/℃）。
隧道结太阳能电池
在一个实施例中，CPV模块内的太阳能电池包括具有分别用作发射极（emitter）和BSF的前部掺杂非晶半导体层和背部掺杂非晶半导体层的双侧金属-绝缘体-半导体（MIS）隧道结结构。图1呈现示出了根据本发明实施例的示例性隧道结太阳能电池的图。隧道结太阳能电池100包括衬底102、覆盖衬底102的表面并且钝化表面缺陷状态的超薄氧化硅层104和106、形成发射极108的前侧掺杂非晶Si（a-Si）层、前侧透明导电氧化物（TCO）层110、形成BSF层112的背侧掺杂a-Si层、背侧TCO层114、前部电极116和背部电极118。图1中箭头表示入射日光。
可以使用n-或p-型掺杂高质量太阳能级别硅（SG-Si）晶片以构建隧道结太阳能电池。在一个实施例中，选择n-型掺杂SG-Si晶片。图2呈现示出了根据本发明实施例的制作隧道结太阳能电池的工艺的图。
在操作2A中，制备衬底200。在一个实施例中，衬底200是SG-Si衬底。SG-Si衬底的电阻率通常在（但是不限于）0.5ohm-cm和10ohm-cm之间的范围内。在一个实施例中，衬底200可以是包括沉积在SG-Si衬底上的外延形成的c-Si增强层的复合基底层。c-Si增强层的掺杂类型与SG-Si衬底的掺杂类型相似。此外，c-Si增强层可以是均匀掺杂或者分级掺杂的。在另一实施例中，c-Si增强层是均匀掺杂的，具有0.5ohm-cm的均匀的薄层电阻。在不同实施例中，c-Si增强层是分级掺杂的，具有在0.2ohm-cm和1ohm-cm之间变化的薄层电阻。c-Si增强层的厚度可以在0.5μm和2μm之间。
制备操作包括去除大约10μm硅的典型锯切损伤刻蚀以及表面结构化。表面结构可以具有各种图案，包括但是不限于：六棱锥、倒置棱锥、圆柱、圆锥、环形和其它不规则形状。在一个实施例中，表面结构化操作导致随机的棱锥结构化表面。此后，衬底200经历广泛的表面清洁。
在操作2B中，在SG-Si衬底200的前表面和背表面上沉积高质量（具有小于1×1011/cm2的缺陷界面状态密度（Dit））电介质材料的薄层，以分别形成前部钝化/隧道层202和背部钝化/隧道层204。在一个实施例中，采用电介质材料薄层仅沉积SG-Si衬底200的前表面。在备选实施例中，采用电介质材料的薄层仅沉积SG-Si衬底200的背表面。各种类型的电介质材料可以用于形成钝化/隧道层，包括但是不限于：氧化硅（SiOx）、氢化SiOx、氮化硅（SiNx）、氢化SiNx、氧化铝（AlOx）、氮氧化硅（SiON）和氢化SiON。此外，各种沉积技术可以用于沉积钝化/隧道层，包括但是不限于：热氧化、原子层沉积、湿法或蒸汽氧化、低压自由基氧化、等离子体增强化学气相沉积（PECVD）等。钝化/隧道层的厚度可以在1和50埃之间，优选地在1和10埃之间。注意，隧道/钝化层的良好控制的厚度确保良好的隧道和钝化效应。
在操作2C中，在前部钝化/隧道层202上沉积氢化的分级掺杂的a-Si层以形成发射极层206。结果，发射极层206位于太阳能电池的面向入射日光的前侧上。发射极层206的掺杂类型与SG-Si衬底200的掺杂类型相反。如果SG-Si衬底200是n-型掺杂，则发射极层206是p-型掺杂，反之亦然。在一个实施例中，使用硼作为掺杂剂对发射极层206进行p-型掺杂。SG-Si衬底200、前部钝化/隧道层202和发射极层206形成前部氧化物隧道结。发射极层206的厚度在2和50nm之间。注意，可以优化发射极层206的掺杂分布以确保良好的欧姆接触、最小光吸收和大内建电场。在一个实施例中，发射极层206的掺杂浓度可以从零变化至5×1020/cm3。在另一实施例中，发射极层206内与前部钝化/隧道层202相邻的区域是未掺杂的或者具有较低的掺杂浓度，而远离前部钝化/隧道层202的区域具有较高掺杂浓度。较低的掺杂浓度确保在前部钝化/隧道层202与发射极层206之间界面处的最小缺陷密度，而在另一侧上的较高浓度防止了发射极层耗尽。发射极层206的晶体结构可以是非晶、或实现更高载流子迁移率的纳米晶、或在紫外线（UV）波长范围内实现良好吸收而在红外线（IR）波长范围内实现良好传输的原始晶体。所有晶体结构需要保持a-Si的大带隙。在一个实施例中，发射极层206可以包括掺杂碳的a-Si。在另一实施例中，发射极层206可以包括非晶碳化硅或氢化非晶碳化硅（a-Si1-xCx:H）。
在操作2D中，在背部钝化/隧道层204的表面上沉积氢化的分级掺杂a-Si层以形成背表面场（BSF）层208。BSF层208的掺杂类型与SG-Si衬底200的掺杂类型相同。如果SG-Si衬底200是n-型掺杂，则BSF层208是也是n-型掺杂，反之亦然。在一个实施例中，使用磷作为掺杂剂对BSF层208进行n-型掺杂。SG-Si衬底200、背部钝化/隧道层204和BSF层208形成背部氧化物隧道结。在一个实施例中，BSF层208的厚度在3和30nm之间。BSF层208的存在改进了背侧钝化并且允许与后续沉积的背部透明导电氧化物（TCO）层的良好的欧姆接触。类似于发射极层206，BSF层208内的与背部钝化/隧道层204相邻的区域是未掺杂的或者具有较低掺杂浓度，而远离背部钝化/隧道层204的区域具有较高掺杂浓度。较低掺杂浓度确保在背部钝化/隧道层204与BSF层208之间的界面处的最小缺陷密度，而另一侧上的较高浓度确保了与背部TCO层的良好欧姆接触。在一个实施例中，BSF层208的掺杂浓度从零改变至5×1020/cm3。除了a-Si之外，也可以使用其它材料以形成BSF层208。在一个实施例中，微晶Si层沉积在背部钝化/隧道层204的表面上以形成BSF层208。使用用于BSF层208的微晶Si材料可以确保较低的串联电阻和与背部TCO层的较好的欧姆接触。在另一实施例中，BSF层208可以包括非晶碳化硅或氢化非晶碳化硅（a-Si1-xCx:H）。
在操作2E中，在发射极层206的表面上沉积TCO材料层以形成导电的防反射层210。TCO的示例包括但是不限于：氧化铟锡（ITO）、氧化锡（SnOx）、掺杂铝的氧化锌（ZnO:Al或AZO）、或掺杂镓的氧化锌（ZnO:Ga）。
在操作2F中，在BSF层208的表面上形成背侧TCO层212。
在操作2G中，分别在TCO层210和212的表面上形成前侧电极214和背侧电极216。在一个实施例中，前侧电极214和/或背侧电极216可以包括Cu格栅，用于形成Cu格栅的各种技术包括但是不限于：无电镀制、电镀、溅射和蒸发。在另一实施例中，Cu格栅可以包括多层结构，诸如Cu/Sn双层结构，或Cu/Ag双层结构。注意，镀制的Cu金属格栅通常具有形状为方形的截面，并且高度至少20μm并且可以高达50μm或更高。这导致镀制的Cu格栅截面面积比传统的丝网印刷的Ag格栅的更大，并且因此镀制的Cu格栅的串联电阻远远小于Ag格栅的串联电阻。此外，镀制的Cu的电阻率约为1.8×10-6ohm-cm，接近于纯Cu。
为了改进铜格栅与TCO层的粘附并且防止铜扩散至TCO下方的硅层，可以在铜格栅和TCO之间形成可选的势垒/粘附层。用于形成该可选的势垒/粘附层的材料包括但是不限于：Ti、TiN、TiW、Ta、TaN、WN、Co或其组合。在一个实施例中，在沉积铜格栅214和216之后，在TCO层210和212的顶部上沉积可选的势垒/粘附层。
注意，太阳能电池的前侧电极通常包括连接至称作总线汇流条的较宽金属线的所谓指部的薄格栅线。指部格栅线的典型宽度在40和100μm之间，并且总线汇流条的典型宽度在1和2mm之间。与用于非CPV（1-太阳（1-sun））应用的太阳能电池相比，为了减小串联电阻，需要一定的权衡以用于针对CPV应用使用的太阳能电池。减小串联电阻的一种方式是通过减小指部之间的节距来增大格栅线的数目。另一种方式是增大总线汇流条的数目，因而减小格栅线的每个分节的长度。然而，两种方法均增大了电极的总面积，导致增大的阴影效应。对于1-太阳应用，具有印刷的银电极的传统太阳能电池通常具有在格栅线之间在2和2.5mm之间的距离，以及在30和35mm之间的格栅线的分节长度。对于CPV应用，诸如5至10太阳浓度（sun concentration），格栅线的节距和长度分别减小至小于1mm和25mm。这会大大增大阴影。然而，在本发明的实施例中，通过使用镀制的铜电极，对于增大格栅线或总线汇流条的密度的需求可以减小至零，因此导致了更高的总体转换效率。
为了使阴影最小，在一个实施例中，前侧电极214包括平行的具有如下截面的金属格栅线，该截面具有弯曲周界。换言之，金属格栅线具有弯曲表面。在弯曲表面的任何给定点处，由与弯曲表面相切的平面和太阳能电池表面所形成角度理想地在45°和90°之间。在另一实施例中，角度在67.5°和90°之间。这确保了射到格栅线的弯曲表面上任何点处的入射日光向下反射以被太阳能电池所吸收。金属格栅线的垂直纵横比大于2.5以最小化电阻性损耗。
除了图2中所示方法之外，制作隧道结太阳能电池的其它方式也是可能的。在一个实施例中，取代SG-Si晶片，隧道结太阳能电池的基底层是外延生长的c-Si层。图3呈现示出了根据本发明实施例的制作隧道结太阳能电池的方法的图。
在操作3A中，使用类似于操作2A的工艺来制备SG-Si衬底300，除了没有形成表面结构化之外。
在操作3B中，在SG-Si衬底300上外延生长重掺杂c-Si层302的薄层。在一个实施例中，使用化学气相沉积（CVD）外延工艺形成重掺杂c-Si外延（EPI）层302。各种类型的Si化合物（诸如SiH4、SiH2Cl2和SiHCl3）可以用作CVD工艺中的前驱物以形成重掺杂c-SiEPI层302。在一个实施例中，由于其储量丰裕和低成本而使用SiHCl3（TCS）。重掺杂c-Si EPI层302的厚度可以在1μm和5μm之间。重掺杂c-Si EPI层302的掺杂类型与SG-Si衬底300的掺杂类型相同。在一个实施例中，重掺杂c-Si EPI层302是n-型掺杂。重掺杂c-Si EPI层302的掺杂浓度可以在1×1017/cm3和1×1020/cm3之间。掺杂水平不应超过最大限值，这可以导致薄膜中不适合的位错。重掺杂c-SiEPI层302可以用作背表面场（BSF）、杂质势垒以及污染物获得层，以用于减小在后续生长的基底层表面处的电子-空穴复合。
在操作3C中，在重掺杂c-Si EPI层302上外延生长轻掺杂c-Si层以形成基底层304。用于生长基底层304的工艺类似于用于生长重掺杂c-Si EPI层302的工艺。在一个实施例中，CVD EPI工艺用于形成基底层304。基底层304的厚度可以在20μm和100μm之间。基底层304的掺杂类型与SG-Si衬底300和重掺杂c-Si EPI层302的掺杂类型相同。在一个实施例中，对基底层304进行n-型掺杂，这可以提供更好的载流子寿命、更高的Voc以及更高的太阳能电池效率。基底层304的掺杂浓度可以在1×1015/cm3和1×1017/cm3之间。在另一实施例中，基底层304可以是具有分级掺杂的c-Si层。基底层304的掺杂浓度可以在1×1014/cm3和1×1018/cm3之间，使得与重掺杂c-Si EPI层302相邻的区域具有较高的掺杂浓度，而相对侧具有较低的掺杂浓度。这种掺杂分布导致允许所产生的少数载流子朝向结漂移的电场，从而增加Jsc。在另一实施例中，在分级掺杂的基底层304内***本征EPI c-Si的薄层。本征EPI c-Si层的厚度可以在1和10nm之间。本征EPI c-Si层的***确保了分级掺杂基底层304的更好的薄膜质量，因为其限制了在基底层304的EPI生长期间的缺陷传播和晶格不匹配。注意，可以通过改变流入外延腔室中的气流而在分级掺杂的基底层304的生长期间在任何点处沉积本征EPIc-Si层。
在基底层304的EPI生长之后，在操作3D中，去除SG-Si衬底300和重掺杂c-Si EPI层302。各种技术可以用于去除SG-Si衬底300和重掺杂c-Si EPI层302，包括但是不限于：机械抛光、化学湿法刻蚀、干法刻蚀和化学机械抛光。在一个实施例中，机械背部研磨（backgrinding）方法用于去除SG-Si衬底300和重掺杂c-Si EPI层302。随后，湿法化学刻蚀工艺用于去除所有背部研磨损伤，背部研磨损伤可以导致增大的少数载流子复合，因此退化了太阳能电池性能。用于湿法化学刻蚀的溶剂包括但是不限于：氮氧化钠（NaOH）、四甲基氢氧化铵（TMAH）、以及硝酸和氢氟酸的混合物（HNO3:HF）。
在操作3E中，对基底层304的前表面和背表面进行结构化以最大化太阳能电池内的光吸收，因此进一步增强太阳能电池转换效率。表面结构的形状可以是棱锥或倒置棱锥，其随机或者规律地分布在基底层304的前表面和背表面上。
剩下的制造工艺类似于图2中所示的制造工艺。在操作3F中，使用类似于操作2B的工艺形成前部和背部钝化/隧道层306和308。
在操作3G中，使用类似于操作2C和2D中使用的工艺形成发射极层310和BSF层312。
在操作3H中，使用类似于操作2E和2F中使用的工艺形成前部和背部TCO层314和316。
在操作3I中，使用类似于操作2G中使用的工艺形成前部和背部电极318和320。
除了图2和图3中所示示例之外，也可能制作具有位于太阳能电池的背侧上的发射极层（其具有与基底层的掺杂类型相反的掺杂类型）的隧道结太阳能电池。在一个实施例中，具有高缺陷密度的p-型掺杂发射极层沉积在背部隧道/钝化层的表面上，而前表面场（FSF）层（具有与基底层的掺杂类型相同的掺杂类型）沉积在前部隧道/钝化层的表面上。因为发射极现在背离入射光，可以最小化由于靠近太阳能电池的前表面的短波长吸收导致的电流损失。此外，发射极可以制作得更厚以消除发射极耗尽效应，而不危害由于短波长吸收导致的电流损失。更厚的发射极也提供了在调节p-型掺杂发射极功函数以匹配背部TCO层的功函数的灵活性，或者使其能够使用更优选的背部TCO材料而不受到传输性质的限制。此外，因为长波长较低能量吸收影响背侧隧道结，所以其不易受到更高能量过量载流子复合的影响。
图4呈现示出了根据本发明实施例的示例性背部隧道结太阳能电池的图。背部隧道结太阳能电池400包括n-型掺杂的衬底402、覆盖衬底402的前表面和背表面的QTB层404和406、用作前表面场（FSF）层的n+掺杂的a-Si层408、前侧透明导电氧化物（TCO）层410、背侧p-型掺杂的a-Si发射极层412、背侧TCO层414、前部电极416、以及背部电极418。图4中箭头表示入射日光。
隧道结太阳能电池的优点包括高转换效率（高达24％），以及低温度系数（低至-0.20％/℃），这小于传统基于晶态Si的太阳能电池的一半。低温度系数允许隧道结太阳能电池与传统太阳能电池相比在提高的温度下更有效地将太阳能转换为电能。例如，在75℃的升高的温度下，隧道结太阳能电池比具有相同铭牌功率的传统太阳能电池产生12-15％的更多电能。注意，铭牌功率是在标准操作条件下（在25℃）所产生的功率值。
前述的铜格栅也可以有利于具有其它类型的结（诸如通过扩散形成的p-n结）的太阳能电池，以用于CPV应用。这些太阳能电池可以不包括TCO层。在这种情形中，铜格栅线位于硅层（诸如发射极）的上方，并且包括Ti、TiN、TiW、Ta、TaN、WN、Ni、Co或其组合的势垒层形成在硅层与铜格栅之间。
CPV模块
图5呈现示出了根据本发明实施例的示例性集中器光伏模块（CPV）的图。CPV模块500包括太阳能集中器502和多个太阳能电池，诸如太阳能电池504、506、508、510以及512，这些太阳能电池相互相邻放置，形成了太阳能条带。太阳能集中器502将照射在其上的日光集中至太阳能电池504－512，所有这些太阳能电池具有与整个模块的尺寸相比远远较小的表面面积。太阳能电池504－512放置在集中器502的焦点处或其附近。在一个实施例中，太阳能电池504－512串联电连接。可以基于日照时间和季节调整集中器502的朝向以最大化日光的吸收。
集中器502可以使用各种可用的光学聚集技术来实施，包括但是不限于通过光学媒介的反射或者折射。例如，集中器502可以是聚焦透镜或反射镜。在图5中，集中器502是抛物线型反射镜，并且太阳能电池504－512放置在抛物线型槽的焦点线上或附近。其它光集中技术也是可能的。例如，集中器502可以是抛物面型反射器。此外，取代连续的抛物面，集中器502可以包括安装在圆柱形或抛物线形支撑衬底上的大量平面镜面。平面镜的制造成本远远低于抛物面或槽的制造成本。
太阳能电池504－512可以是任何类型的太阳能电池。在一个实施例中，太阳能电池504－512包括隧道结太阳能电池，其可以在前侧或者背侧处具有结。隧道结太阳能电池具有远远更小的低温度系数（低至-0.20％/℃），因此与其它类型太阳能电池相比在提高的温度下具有更高的电池效率。注意，由于集中器502的存在，太阳能电池504－512即便冷却（图5中未示出冷却***）也通常工作在较高的温度下。在又一实施例中，太阳能电池504－512可以是使用镀制的Cu格栅作为朝光表面上的前侧金属格栅的任何类型的太阳能电池。镀制Cu的较低电阻率和Cu格栅线的较大截面面积最小化了电阻损耗，该电阻损耗由于电流拥挤效应而在CPV中可能是重大损耗因素。在另一实施例中，Cu格栅包括具有弯曲表面的平行格栅线以消除阴影效应。
已经仅为了说明和描述的目的呈现各个实施例的前述说明。它们并非意在穷举或者限定本发明为所公开的形式。因此，许多修改和变型对于本领域技术人员而言明显的。此外，本公开并非意在限定本发明。

Claims (20)

1.一种光伏模块，包括：
光学集中器；以及
隧道结太阳能电池，包括：
基底层，
量子隧道势垒(QTB)层，位于所述基底层上方；
发射极层，
前侧电极，以及
背侧电极，
其中所述前侧电极包括具有弯曲表面的金属格栅线，由此允许入射到所述金属格栅线的所述弯曲表面上的光向下反射以被太阳能电池吸收。
2.根据权利要求1所述的光伏模块，其中，所述QTB层包括以下项中的至少一项：
氧化硅(SiOx)；
氢化SiOx；
氮化硅(SiNx)；
氢化SiNx；
氧化铝(AlOx)；
氮氧化硅(SiON)；以及
氢化SiON。
3.根据权利要求1所述的光伏模块，其中，所述发射极层包括以下项中的至少一项：
非晶Si(a-Si)；以及
非晶SiC(a-SiC)。
4.根据权利要求1所述的光伏模块，其中，所述前侧电极包括前侧金属格栅，所述前侧金属格栅包括以下项中的至少一项：Cu和Ni。
5.根据权利要求4所述的光伏模块，其中，所述前侧金属格栅使用镀制技术形成。
6.根据权利要求1所述的光伏模块，其中，所述隧道结太阳能电池进一步包括位于所述基底层下方的背表面场(BSF)层，并且其中所述BSF层包括以下项中的至少一项：非晶Si(a-Si)和非晶SiC(a-SiC)。
7.根据权利要求1所述的光伏模块，其中，所述隧道结太阳能电池进一步包括位于所述发射极层顶部上的透明导电氧化物(TCO)层。
8.根据权利要求1所述的光伏模块，其中，所述基底层包括以下项中的至少一项：
单晶硅晶片；以及
外延生长的晶态Si(c-Si)薄膜。
9.根据权利要求1所述的光伏模块，其中，所述隧道结太阳能电池进一步包括位于所述基底层下方的第二QTB层。
10.根据权利要求1所述的光伏模块，其中，所述发射层背向入射光而位于所述基底层下方。
11.一种光伏***，包括：
光学模块，被配置为集中接收到的日光；以及
太阳能电池模块，包括：
多层半导体结构，
前侧金属格栅，面向入射光而位于所述多层半导体结构上方，其中所述前侧金属格栅包括以下项中的至少一项：Cu和Ni，以及
背侧电极，
其中所述前侧金属格栅包括具有弯曲表面的金属格栅线，由此允许射到所述弯曲表面的入射光向下反射以被太阳能电池模块吸收。
12.根据权利要求11所述的光伏***，其中，所述前侧金属格栅使用镀制技术形成。
13.根据权利要求11所述的光伏***，其中，所述多层半导体结构包括：
基底层；
发射极层；
前侧导电层，位于所述前侧金属格栅与所述发射极层之间；以及
背侧导电层，位于所述基底层与所述背侧电极之间。
14.根据权利要求13所述的光伏***，其中，所述基底层包括以下项中的至少一项：
单晶硅晶片；以及
外延生长的晶态Si(c-Si)薄膜。
15.根据权利要求13所述的光伏***，进一步包括位于所述基底层上方的量子隧道势垒(QTB)层，其中所述QTB层包括以下项中的至少一项：
氧化硅(SiOx)；
氢化SiOx；
氮化硅(SiNx)；
氢化SiNx；
氧化铝(AlOx)；
氮氧化硅(SiON)；以及
氢化SiON。
16.根据权利要求13所述的光伏***，其中，所述发射极层包括以下项中的至少一项：
非晶Si(a-Si)；以及
非晶SiC(a-SiC)。
17.根据权利要求13所述的光伏***，其中，所述多层半导体结构进一步包括位于所述基底层下方的背表面场(BSF)层，并且其中所述BSF层包括以下项中的至少一项：非晶Si(a-Si)；以及非晶SiC(a-SiC)。
18.根据权利要求13所述的光伏***，其中，所述多层半导体结构进一步包括位于所述发射极层顶部上的透明导电氧化物(TCO)层。
19.根据权利要求13所述的光伏***，其中，所述多层半导体结构进一步包括位于所述基底层下方的第二QTB层。
20.根据权利要求13所述的光伏***，其中，所述发射极层背向入射光而位于所述基底层下方。
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