JP5857237B2 - 太陽電池セル及び太陽電池モジュール - Google Patents
太陽電池セル及び太陽電池モジュール Download PDFInfo
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- JP5857237B2 JP5857237B2 JP2010265592A JP2010265592A JP5857237B2 JP 5857237 B2 JP5857237 B2 JP 5857237B2 JP 2010265592 A JP2010265592 A JP 2010265592A JP 2010265592 A JP2010265592 A JP 2010265592A JP 5857237 B2 JP5857237 B2 JP 5857237B2
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- 238000006243 chemical reaction Methods 0.000 claims description 35
- 239000000463 material Substances 0.000 claims description 10
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 239000003566 sealing material Substances 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000011888 foil Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Sustainable Development (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
図1は、第1の実施形態に係る太陽電池セルの受光面の略図的平面図である。図2は、第1の実施形態における太陽電池セルの裏面の略図的平面図である。図3は、図1の線III−IIIに示す部分の略図的断面図である。
図6は、第1の変形例に係る太陽電池セルの受光面の略図的平面図である。
図7は、第2の変形例に係る太陽電池セルの受光面の略図的平面図である。
図8は、第2の実施形態に係る太陽電池セルの受光面の略図的平面図である。
図11は、第3の変形例に係る太陽電池セルの受光面の略図的平面図である。図11に示すように、電極21aは、上底部32a1、32b1、下底部32a2,32b2及び線状電極部32a5,32b5のそれぞれの端部から、x方向に沿って延び、透明導電膜25aの端部にまで至る線状の電極部32a6〜32a11、32b6〜32b11をさらに備えていてもよい。この構成によれば、面取り状角部20A〜20Dにおける集電抵抗をより低減できる。その結果、より改善された光電変換効率を得ることができる。
図12は、第3の実施形態に係る太陽電池モジュールの略図的断面図である。
第1の保護部材14、封止材13、複数の太陽電池セル10、封止材13、第2の保護部材15を有する積層体の外周には、必要に応じて、Al等の金属製の枠体(図示しない)が取り付けられる。また、第1の保護部材14の表面には、必要に応じて、太陽電池セル10の出力を外部に取り出すための端子ボックスが設けられる。
10…太陽電池セル
11…配線材
13…封止材
14…第1の保護部材
15…第2の保護部材
20…光電変換部
20A〜20D…面取り状角部
20a…受光面
20a1…中央部
20a2…第1の端部
20a3…第2の端部
20b…裏面
21a,21b…電極
25a、25b…透明導電膜
31…線状電極部
32a、32b…台形状電極部
32a1、32b1…上底部
32a2、32b2…下底部
32a3,32a4,32b3,32b4…斜辺部
32a5,32b5…線状電極部
33…バスバー部
Claims (9)
- 角部が面取り状である矩形状の光電変換部と、前記光電変換部の一主面の上に配された電極とを有する太陽電池セルであって、
前記一主面は、第1の方向において前記面取り状角部が設けられている端部と、前記第1の方向において前記面取り状角部よりも中央側に位置している中央部とを含み、
前記電極は、
前記中央部に設けられており、前記第1の方向に対して垂直な第2の方向に沿って延びる複数の線状電極部と、
前記端部に設けられており、前記第2の方向に沿って延びる上底部及び下底部と、前記上底部の端部と前記下底部の端部とを接続しており、前記面取り状角部の端辺に沿って延びる一対の斜辺部とを含む台形状電極部と、
前記第1の方向に沿って設けられた複数の太陽電池セルを電気的に接続する配線材と少なくとも前記端部で接続され、前記複数の線状電極部、前記上底部及び前記下底部と直接接続されている少なくともひとつのバスバー部とを有し、
前記斜辺部は前記バスバー部と直接接続されていない、太陽電池セル。 - 前記バスバー部は、前記端部から前記中央部にわたり一体的な矩形形状を有する、請求項1記載の太陽電池セル。
- 前記台形状電極部は、前記第1の方向において前記上底部と前記下底部との間に位置しており、前記一対の斜辺部間を接続している線状の電極部をさらに含む、請求項1または2に記載の太陽電池セル。
- 前記電極は、前記台形状電極部を複数含む、請求項1〜3のいずれか一項に記載の太陽電池セル。
- 前記一主面と前記電極との間において、前記一主面の端縁部を除いた部分を覆うように設けられている面状の透明導電膜をさらに備える、請求項1〜4のいずれか一項に記載の太陽電池セル。
- 前記複数の線状電極部は、前記透明導電膜の端辺に至るように設けられている、請求項5に記載の太陽電池セル。
- 前記電極は、前記上底部及び前記下底部の少なくとも一方の端部から前記第2の方向に沿って延び、前記透明導電膜の端辺に至る電極部をさらに有する請求項5または6に記載の太陽電池セル。
- 前記一主面は、受光面である、請求項1〜7のいずれか一項に記載の太陽電池セル。
- 請求項1〜8のいずれか一項に記載の複数の太陽電池セルと、
前記複数の太陽電池セルを電気的に接続している配線材と、
を備え、
前記配線材は、前記複数の線状電極部と交差するように配されている、太陽電池モジュール。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010265592A JP5857237B2 (ja) | 2010-11-29 | 2010-11-29 | 太陽電池セル及び太陽電池モジュール |
EP11845908.0A EP2648224A4 (en) | 2010-11-29 | 2011-11-25 | Solar battery cell and solar battery module |
PCT/JP2011/077132 WO2012073801A1 (ja) | 2010-11-29 | 2011-11-25 | 太陽電池セル及び太陽電池モジュール |
CN201190000907.8U CN203481246U (zh) | 2010-11-29 | 2011-11-25 | 太阳能电池单元和太阳能电池模块 |
US13/895,517 US20130247955A1 (en) | 2010-11-29 | 2013-05-16 | Solar battery cell and solar battery module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010265592A JP5857237B2 (ja) | 2010-11-29 | 2010-11-29 | 太陽電池セル及び太陽電池モジュール |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012122217A Division JP2012160768A (ja) | 2012-05-29 | 2012-05-29 | 太陽電池セル |
JP2015149106A Division JP2015188117A (ja) | 2015-07-29 | 2015-07-29 | 太陽電池セル |
Publications (2)
Publication Number | Publication Date |
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JP2012119393A JP2012119393A (ja) | 2012-06-21 |
JP5857237B2 true JP5857237B2 (ja) | 2016-02-10 |
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JP2010265592A Active JP5857237B2 (ja) | 2010-11-29 | 2010-11-29 | 太陽電池セル及び太陽電池モジュール |
Country Status (5)
Country | Link |
---|---|
US (1) | US20130247955A1 (ja) |
EP (1) | EP2648224A4 (ja) |
JP (1) | JP5857237B2 (ja) |
CN (1) | CN203481246U (ja) |
WO (1) | WO2012073801A1 (ja) |
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EP3680939A1 (en) * | 2019-01-08 | 2020-07-15 | LG Electronics Inc. | Solar cell and solar cell panel including the same |
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US9012766B2 (en) | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
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US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
JP6065009B2 (ja) * | 2012-06-29 | 2017-01-25 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
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US9865754B2 (en) | 2012-10-10 | 2018-01-09 | Tesla, Inc. | Hole collectors for silicon photovoltaic cells |
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JP6273583B2 (ja) * | 2012-11-30 | 2018-02-07 | パナソニックIpマネジメント株式会社 | 太陽電池 |
US9281436B2 (en) | 2012-12-28 | 2016-03-08 | Solarcity Corporation | Radio-frequency sputtering system with rotary target for fabricating solar cells |
US10074755B2 (en) | 2013-01-11 | 2018-09-11 | Tesla, Inc. | High efficiency solar panel |
US9412884B2 (en) | 2013-01-11 | 2016-08-09 | Solarcity Corporation | Module fabrication of solar cells with low resistivity electrodes |
WO2014110520A1 (en) | 2013-01-11 | 2014-07-17 | Silevo, Inc. | Module fabrication of solar cells with low resistivity electrodes |
US9624595B2 (en) | 2013-05-24 | 2017-04-18 | Solarcity Corporation | Electroplating apparatus with improved throughput |
US10309012B2 (en) | 2014-07-03 | 2019-06-04 | Tesla, Inc. | Wafer carrier for reducing contamination from carbon particles and outgassing |
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2010
- 2010-11-29 JP JP2010265592A patent/JP5857237B2/ja active Active
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2011
- 2011-11-25 EP EP11845908.0A patent/EP2648224A4/en not_active Withdrawn
- 2011-11-25 CN CN201190000907.8U patent/CN203481246U/zh not_active Expired - Lifetime
- 2011-11-25 WO PCT/JP2011/077132 patent/WO2012073801A1/ja active Application Filing
-
2013
- 2013-05-16 US US13/895,517 patent/US20130247955A1/en not_active Abandoned
Cited By (3)
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EP3680939A1 (en) * | 2019-01-08 | 2020-07-15 | LG Electronics Inc. | Solar cell and solar cell panel including the same |
KR20200086121A (ko) | 2019-01-08 | 2020-07-16 | 엘지전자 주식회사 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
US11575054B2 (en) | 2019-01-08 | 2023-02-07 | Shangrao Jinko Solar Technology Development Co., Ltd | Solar cell and solar cell panel including the same |
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EP2648224A1 (en) | 2013-10-09 |
JP2012119393A (ja) | 2012-06-21 |
CN203481246U (zh) | 2014-03-12 |
US20130247955A1 (en) | 2013-09-26 |
EP2648224A4 (en) | 2017-12-20 |
WO2012073801A1 (ja) | 2012-06-07 |
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