CN103515522A - Thermoelectric cooling module and manufacturing method thereof - Google Patents
Thermoelectric cooling module and manufacturing method thereof Download PDFInfo
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- CN103515522A CN103515522A CN201310258141.9A CN201310258141A CN103515522A CN 103515522 A CN103515522 A CN 103515522A CN 201310258141 A CN201310258141 A CN 201310258141A CN 103515522 A CN103515522 A CN 103515522A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
Abstract
The invention provides a thermoelectric cooling module. The thermoelectric cooling module comprises a first substrate and a second substrate and a plurality of thermoelectric elements formed between the first and the second substrates. Metal electrodes are formed on the first and the second substrates which are opposite to each other. The first and the second substrates comprise aluminium layers opposite to each other and aluminium oxide layers formed in a part of each surface of the aluminium layers, thereby improving the efficiency of the thermoelectric cooling module through reducing junction resistance, and reducing costs.
Description
The cross reference of related application
The application requires on June 28th, 2012 to be submitted to the priority of the Korean Patent Application No. 10-2012-0069866 of Korea S Department of Intellectual Property, and its full content mode is by reference incorporated to the application.
Technical field
The present invention relates to a kind of thermoelectric cooling module and manufacture method thereof, more particularly, relate to a kind of being configured to and form by aluminium lamination is carried out to anodic oxidation the thermoelectric cooling module that porous alumina layer makes it possible to improve by reducing junction resistance the efficiency of thermoelectric cooling module.
Background technology
Thermoelectric element is utilize the multiple effect being caused by heat and electric current reciprocation and have the general designation that forms the element of the right structure of PN junction by the P type thermoelectric material in conjunction with in metal electrode and N-type thermoelectric material.When PN junction between while thering is temperature difference, just by Seebeck effect, carry out generation current.Therefore, thermoelectric element can serve as Blast Furnace Top Gas Recovery Turbine Unit (TRT).In addition, due to peltier effect, that is, the cooling and opposite side of a side of PN junction produces heat, and thermoelectric element can be used as temperature control equipment.
Here, as shown in Figure 1, peltier effect refers to that the hole of P type thermoelectric material when applying direct voltage from outside and the electronics of N-type thermoelectric material move, thereby causes the two ends heating of material and the phenomenon of heat absorption.As shown in Figure 2, Seebeck effect refers to that move in electronics and hole when providing heat from external heat source, so produce material, flow, thus the phenomenon of generating.
Owing to using thermoelectric material to carry out active cooling, so can improve the thermal stability of element, can not produce vibration and noise, thereby and because not use the volume of independent condenser and cold-producing medium element little.In addition, active cooling is generally acknowledged environment protection method.As using thermoelectric material to carry out the application of active cooling, active cooling can be used in non-cold-producing medium refrigerator, air-conditioning, multiple micro cooling system etc.Specifically, when thermoelectric element is attached to a plurality of storage device, compare with existing cooling means, can reduce volume and element can be maintained to even and stable temperature, thereby make to improve the performance of element.
Below, illustrate with reference to the accompanying drawings according to the configuration of the electrothermal module of prior art.
Fig. 3 is vertical section view, shows according to the configuration of the electrothermal module of prior art.
As shown in the figure, first substrate 11(infrabasal plate) and second substrate 12(upper substrate) be arranged on the upper surface and lower surface of electrothermal module.First substrate 11 and second substrate 12 play the effect of heating or heat absorption and maintain as far as possible with the preset distance state of each interval vertically.
P type thermoelectric element 41 and N-type thermoelectric element 42 are arranged between first substrate 11 and second substrate 12.P type thermoelectric element 41 and N-type thermoelectric element 42 are to form to make thermoelectric material have reservation shape and reservation shape, and are alternately arranged in the element between first substrate 11 and second substrate 12.
The diffusion impervious layer 30 that prevents metal diffusion is formed between metal electrode 20 and P type thermoelectric element 41 and N-type thermoelectric element 42.
As shown in Korean patent No. 10-0766612, traditional electrothermal module is configured to the both sides that heating panel is connected to thermoelectric element, so that the heat of the heat radiation that electrothermal module is sent to outside or outside absorbing.
Like this, as traditional electrothermal module of the heat dissipation element of electronic product, by heating panel being attached to radiating part, assign to the heat radiation of radiator portion to outside.Yet after a period of time, the temperature of radiator portion rises, and owing to towards cooling surface, flow phenomenon having been realized to heat balance.Therefore, the problem of traditional electrothermal module is that it cannot suitably play the effect of heat dissipation element.
Prior art list of references
References
References 1: Korean patent No. 10-0766612
Summary of the invention
The present invention is intended to address the above problem.An aspect of of the present present invention provides a kind of thermoelectric cooling module and manufacture method thereof, described thermoelectric cooling module is configured to form and has first substrate and the second substrate that makes the integral structure that Woelm Alumina and aluminium contacts with each other by aluminium being carried out to anodic oxidation, thereby can improve the efficiency of thermoelectric cooling module and can realize the effect that reduces cost by reducing junction resistance.
According to an aspect of the present invention, a kind of thermoelectric cooling module is provided, described thermoelectric cooling module comprises: first substrate and second substrate, be formed with metal electrode and described first substrate and described second substrate toward each other on described first substrate and described second substrate; And a plurality of thermoelectric elements, be formed between described first substrate and described second substrate, wherein, described first substrate and described second substrate comprise aluminium lamination respect to one another and the alumina layer forming in each surperficial part of described aluminium lamination.
According to an embodiment of the invention beneficial effect be as the aluminium lamination of heating panel and by anode oxidation method, form and as the alumina layer as insulator of the knot of the thermoelectric element shape that forms as one, make can improve by reducing junction resistance the efficiency of thermoelectric cooling module, and can reduce cost.
Accompanying drawing explanation
The present invention includes accompanying drawing so that a further understanding of the present invention to be provided, and accompanying drawing is incorporated to and forms the part of this specification.Accompanying drawing shows exemplary embodiment of the present invention, and with together with this specification, play explanation principle of the present invention effect.In the accompanying drawings:
Fig. 1 is schematic diagram, shows the thermoelectric-cooled according to peltier effect;
Fig. 2 is schematic diagram, shows the thermoelectric power generation according to Seebeck effect;
Fig. 3 is cutaway view, shows according to the internal configurations of the electrothermal module of prior art;
Fig. 4 is cutaway view, shows thermoelectric cooling module according to a preferred embodiment of the present invention;
Fig. 5 and Fig. 6 are perspective view and the cutaway views of the substrate with Woelm Alumina according to a further advantageous embodiment of the invention, and this Woelm Alumina forms by aluminium is carried out to anodic oxidation;
Fig. 7 and Fig. 8 show top real image and the cutaway view of the anodized alumina layer on aluminium lamination;
Fig. 9 is according to the vertical view of the substrate that is formed with metal electrode and thermoelectric element of another preferred embodiment of the present invention;
Figure 10 is flow chart, shows according to the manufacture method of the thermoelectric cooling module of a preferred embodiment more of the present invention; And
Figure 11 to Figure 14 is manufacturing flow chart, shows according to the manufacture method of the thermoelectric cooling module of a preferred embodiment more of the present invention.
Embodiment
Hereinafter with reference to accompanying drawing, more completely describe according to a preferred embodiment of the invention.Yet exemplary embodiment according to the present invention may be embodied as multiple different form and is not appreciated that and is limited to embodiment as herein described.On the contrary, this exemplary embodiment is configured such that the present invention will thoroughly, intactly and fully be passed on scope of the present invention to those skilled in the art.In addition, should be understood that, the shape of the element shown in accompanying drawing and size can be illustrated turgidly, to provide the intelligible description of the appearance of structure of the present invention.The element that in accompanying drawing, identical Reference numeral represents is meant to be mutually the same element.
The object of embodiments of the invention is to provide a kind of thermoelectric cooling module, described thermoelectric cooling module is configured to provide a kind of integrated substrate that forms anodized alumina layer on aluminium lamination, make to raise the efficiency by reducing junction resistance, and reduce cost.
Fig. 4 is the cutaway view of thermoelectric cooling module according to a preferred embodiment of the present invention; Fig. 5 and Fig. 6 are perspective view and the cutaway views of the substrate with Woelm Alumina according to a further advantageous embodiment of the invention, and this Woelm Alumina forms by aluminium is carried out to anodic oxidation; Fig. 7 and Fig. 8 show top real image and the cutaway view of substrate; And Fig. 9 is according to the vertical view of the substrate that is formed with metal electrode and thermoelectric element of another preferred embodiment of the present invention.
Referring to accompanying drawing, thermoelectric cooling module 100 according to a preferred embodiment of the present invention comprises: first substrate 110 and second substrate 120, and between is formed with metal electrode 130, and both are toward each other; And a plurality of thermoelectric elements 141,142, be formed between first substrate 110 and second substrate 120.
Specifically, as shown in Figures 4 to 6, first substrate 110 and second substrate 120 comprise aluminium lamination 111,121 and the Woelm Alumina (Al forming by anodic oxidation
2o
3) layer 112,122.Alumina layer 112 and 122 is formed in each surperficial part of aluminium lamination 111,121 respect to one another.The first and second substrates 110,120 have the integrative-structure of aluminium and aluminium oxide.Aluminium lamination 111,121 plays the effect to the heating panel of the outside of system by the heat radiation of radiator portion.As the porous alumina layer 112,122 of insulating barrier, be used as the knot of thermoelectric element 141,142.
Tradition thermoelectric cooling module is configured to make the heating panel of different materials to be attached to radiator portion.Yet, in the present embodiment of the present invention, by aluminium is carried out to the integrative-structure that anodic oxidation realizes aluminium and aluminium oxide, thus by reducing contact resistance, can improve thermoelectrical efficiency, and also can realize the effect that reduces cost.
Now, be formed on aluminium lamination 112,122 on the first and second substrates 110,120 toward each other and in correspondence with each other.Therefore, the alumina layer 112,122 of the first and second substrates 110,120 can have identical area mutually.In addition, alumina layer 112,122 can also be of similar shape and thickness.Yet they do not need must be consistent mutually.
As shown in Fig. 5 and Fig. 9, comprise that the first and second substrates 110,120 of aluminium lamination 111,121 and alumina layer 112,122 can form annular shape.Yet shape is not limited to this.The first and second substrates 110,120 can form polygonal shape, for example elliptical shape or quadrangle form.
Preferably each thickness d of alumina layer 112,122 is in the scope of 30 μ m to 200 μ m.When thickness is less than 30 μ m, because the existence of conductance, so alumina layer may not play the effect of insulator.
In addition, each area of the alumina layer 112,122 of the first and second substrates 110,120 can be in 5% to 50% scope of each area of aluminium lamination 111,121.This be because, when each area of alumina layer 112,122 surpass aluminium lamination 111,121 each area 50% time, the heat diffusion of radiator portion is to cooling segment, and the rising of the temperature of cooling segment, so alumina layer possibly cannot play the effect of heat dissipation element.In addition, when each area is less than 5%, thermoelectric element 141,142 becomes and is difficult to connect.
Although not shown in the accompanying drawings, yet between metal electrode 130 and P type and N-type thermoelectric element 141,142, may further include the diffusion impervious layer (not shown) that improves the resilient coating (not shown) of adhesion strength and prevent metal diffusion.Diffusion impervious layer can be Ni.
Figure 10 is flow chart, shows according to the manufacture method of the thermoelectric cooling module of a preferred embodiment more of the present invention.Referring to accompanying drawing, first form first substrate 110 and second substrate (S10).Specifically, by using mask to carry out anode oxidation method, in the aluminium sample of preparation, form porous alumina layer 112,122, manufacture first substrate 110 and the second substrate 120(S12 of the integrative-structure with aluminium and aluminium oxide).By at 1 ℃ of H to 1 percentage by weight
3pO
4apply 195V voltage more than within 10 hours, implementing anodizing of aluminium.Now, each area that is formed with alumina layer 112,122 can be in 5% to 50% scope of each area of aluminium lamination 111,121.Each thickness of alumina layer 112,122 can be in the scope of 30 μ m to 200 μ m as above.In addition, the alumina layer 112,122 of second substrate 110,120 can form them and has mutually identical area, shape and thickness.
After this, can on the alumina layer 112,122 of the first and second electrodes 110,120, form metal electrode 130(S20).Metal electrode 130 can be to consist of at least one metal that is selected from the group that comprises Cu, Au, Ag, Ni, Al, Cr, Ru, Re, Pb, Sn, In and Zn or their alloy.
After this, by the thermoelectric material of the metal electrode of first substrate 110 130 doping such as BiTe sill, PbTe sills etc. being formed to a pair of P type and N-type thermoelectric element 141,142(S30).
Now, may further include and between metal electrode 130 and P type and N-type thermoelectric element 141,142, form the process that improves the resilient coating of adhesion strength and prevent the diffusion impervious layer of metal diffusion.
After this, the upper substrate that has a metal electrode 130 by combination (, second substrate) produce thermoelectric cooling module, described metal electrode forms the P type and the N-type thermoelectric element 141,142 that make to be formed on as on the metal electrode 130 of the first substrate 110 of infrabasal plate and is electrically connected (S40).
Figure 11 to Figure 14 is manufacturing flow chart, shows according to the manufacture method of the thermoelectric cooling module of an embodiment more of the present invention.
Referring to accompanying drawing, will first substrate 110 respect to one another and second substrate 120 comprise by anodic oxidation and be formed on the alumina layer 112,122 in each part of aluminium lamination 111,121.Can pass through at 1 ℃ of H to 1 percentage by weight
3pO
4apply 195V voltage more than within 10 hours, implementing anodizing of aluminium.First substrate 110 and second substrate 120 can be the annulars shown in Fig. 5 and Fig. 9 or can have for example oval or tetragonal polygonized structure.Yet, below the hypothesis based on them with the annular shape as shown in Fig. 5 and Fig. 9 is described them.
Now, the thickness of each alumina layer 112,122 can be in the scope of 30 μ m to 200 μ m, and the area of each alumina layer 112,122 can be in 5% to 50% scope of the area of each aluminium lamination 111,121.As shown in figure 11, the alumina layer 112,122 of the first and second substrates 110,120 can have identical thickness, shape and area.Yet they do not need must be consistent mutually.
After this, on the alumina layer 112,122 of the first and second substrates 110,120, form metal electrode 130, and a plurality of P type and N-type thermoelectric element 141,142 be formed on the metal electrode 130 forming on first substrate 110, make their form be connected right.Figure 13 only shows a pair of P type and N-type thermoelectric element, but as described above, this is to be annular hypothesis based on first substrate 110.The vertical view of Figure 13 is identical with Fig. 9.Therefore, as shown in Figure 9, can interaction arrangement (back and forth) or arrange a pair of P type point-blank and N-type thermoelectric element 141,142.Layout shape is unrestricted.Now, in order to prevent metal diffusion, may further include the process that forms diffusion impervious layer between metal electrode 130 and P type and N-type thermoelectric element 141,142.
After this, bonding the second electrode 120, makes a plurality of P types and N-type thermoelectric element 141 ,142Mei one end be electrically connected mutually by metal electrode 130.
Like this, the present embodiment of the present invention has realization and comprises by aluminium being carried out to the first and second substrates 110,120 of the aluminium of anodic oxidation generation and the integrative-structure of aluminium oxide, thus the effect that can improve the efficiency of thermoelectric cooling module and can reduce cost by reducing contact resistance.
[the conductance of each thickness of experimental example 1] – based on aluminium oxide
By being that 10nm and the alumina layer forming due to the autoxidation of aluminium and thickness are 20 μ m and 30 μ m and by aluminium being carried out to the comparative test of each conductance of the alumina layer that anodic oxidation forms based on thickness, obtain the result of following table 1.Here, the diameter of aluminium flake is 4cm, and thickness is 1cm, and the area of anodized aluminium oxide is 12.56cm
2(diameter: 2cm).
[table 1]
When forming thickness by autoxidation be the alumina layer of 10nm on aluminium flake, the test value of resistance is 10
-4Ω, and conductance is 7.96 * 10
4(S/m).When forming thickness by anodic oxidation and be the alumina layer of 20 μ m, the test value of resistance is 1.7 * 10
-2Ω and conductance are 4.69 * 10
2(S/m).Yet, when forming thickness by anodic oxidation and be the alumina layer of 30 μ m, the resistance value excess load of test, and conductance is 0.That is to say, this means that alumina layer is insulator.Like this, when the thickness of the alumina layer forming by anodic oxidation is less than 30 μ m, can confirm that alumina layer cannot carry out the effect of insulator.
[each Area Ratio of experimental example 2 – based on aluminium lamination and alumina layer according to elapsed time
variations in temperature
By each sample of thermoelectric cooling module based on being attached to LED to cooling segment according to the relatively investigation of the variations in temperature of time, obtained the result shown in table 2.Here, in sample A, the area of alumina layer be aluminium lamination area 100%, and in sample B, the area of alumina layer be aluminium lamination area 50%.By 0.37W(1.0V * 0.37A) electric power be fed to comparably these samples.
[table 2]
As above shown in table 2, as time goes by, the area of alumina layer is that the temperature difference in the cooling segment between 100% sample A of 50% the sample B of area of aluminium lamination and area that the area of alumina layer is aluminium lamination increases.This is because decent A, and when alumina layer is formed on the whole area of aluminium lamination, the heat diffusion of radiator portion is to cooling segment, so the temperature of cooling segment increases.Therefore, alumina layer is only formed in a part for aluminium lamination, rather than forms identical with the area of aluminium lamination.Preferably, the area of alumina layer can be formed in 5% to 50% the scope of area of aluminium lamination.
As mentioned above, at accompanying drawing of the present invention with in describing in detail, owing to having described specific embodiment of the present invention, so should it is evident that, those skilled in the art can carry out numerous modifications and variations in the situation that does not depart from the spirit and scope of the present invention.Therefore, should be appreciated that to be above-mentionedly example of the present invention and not to be appreciated that and to be limited to disclosed specific embodiment, and the modification of disclosed embodiment and other embodiment is intended to be included in the scope of appended claims and equivalents thereof.
Claims (11)
1. a thermoelectric cooling module, comprising:
First substrate and second substrate, be formed with metal electrode and described first substrate and described second substrate toward each other on described first substrate and described second substrate; And
A plurality of thermoelectric elements, are formed between described first substrate and described second substrate,
Wherein, described first substrate and described second substrate comprise aluminium lamination respect to one another and the alumina layer forming in each surperficial part of described aluminium lamination.
2. module according to claim 1, wherein, the thickness of described alumina layer is in the scope of 30 μ m to 200 μ m.
3. module according to claim 1, wherein, the area of described alumina layer is in 5% to 50% scope of the area of described aluminium lamination.
4. module according to claim 1, wherein, the area that is formed on each alumina layer on described first substrate and described second substrate is mutually the same.
5. module according to claim 1, wherein, described metal electrode is to consist of at least one metal that is selected from the group that comprises Cu, Au, Ag, Ni, Al, Cr, Ru, Re, Pb, Sn, In and Zn or their alloy.
6. module according to claim 1, further comprises the diffusion impervious layer being formed between described metal electrode and described thermoelectric element.
7. a manufacture method for thermoelectric cooling module, described method comprises:
By form alumina layer in each surperficial part of aluminium lamination, form first substrate and second substrate;
On the described alumina layer forming, form metal electrode on described first substrate and described second substrate; And
By described metal electrode, be electrically connected a plurality of thermoelectric elements.
8. method according to claim 7, wherein, carries out and forms described alumina layer, makes the thickness of described alumina layer in the scope of 30 μ m to 200 μ m.
9. method according to claim 7, wherein, carries out and forms described alumina layer, and the area that makes described alumina layer is in 5% to 50% scope of the area of described aluminium lamination.
10. method according to claim 7, wherein, the area that is formed on the described alumina layer on described first substrate and described second substrate is mutually the same.
11. methods according to claim 7, wherein, form described alumina layer and realize by anode oxidation method.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120069866A KR101998697B1 (en) | 2012-06-28 | 2012-06-28 | Thermoelectric cooling module and manufacturing method thereof |
| KR10-2012-0069866 | 2012-06-28 |
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| KR (1) | KR101998697B1 (en) |
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| CN108461617A (en) * | 2018-02-08 | 2018-08-28 | 南方科技大学 | Temperature regulator part and preparation method |
| CN108648635A (en) * | 2018-05-09 | 2018-10-12 | 京东方科技集团股份有限公司 | The temperature-compensation method of display panel, display device and display panel |
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| KR102111604B1 (en) * | 2014-05-13 | 2020-05-15 | 엘지이노텍 주식회사 | Device using thermoelectric moudule |
| WO2019111997A1 (en) * | 2017-12-06 | 2019-06-13 | 三菱マテリアル株式会社 | Insulating heat-transfer substrate, thermoelectric conversion module, and method for manufacturing insulating heat-transfer substrate |
| JP7200616B2 (en) * | 2017-12-06 | 2023-01-10 | 三菱マテリアル株式会社 | Insulated heat transfer substrate, thermoelectric conversion module, and method for manufacturing insulated heat transfer substrate |
| KR102040504B1 (en) * | 2018-02-22 | 2019-11-05 | 이배근 | method and apparatus of manufacturing substrate material for thermoelectric module |
| KR102372438B1 (en) | 2019-04-30 | 2022-03-08 | 한국전기연구원 | Thermoelectric element substrate and thermoelectric element |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2014011469A (en) | 2014-01-20 |
| KR20140002158A (en) | 2014-01-08 |
| KR101998697B1 (en) | 2019-07-10 |
| JP6275962B2 (en) | 2018-02-07 |
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Application publication date: 20140115 |