JP2014011469A - Thermoelectric cooling module and manufacturing method of the same - Google Patents
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- 238000001816 cooling Methods 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 75
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 48
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 238000009792 diffusion process Methods 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 230000002265 prevention Effects 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 description 18
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 238000002048 anodisation reaction Methods 0.000 description 6
- 238000007743 anodising Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005679 Peltier effect Effects 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 230000005678 Seebeck effect Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 229910002665 PbTe Inorganic materials 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 description 2
- 230000005680 Thomson effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
Abstract
Description
本発明は、熱電冷却モジュール及びその製造方法に関し、より詳しくは、アルミニウム層を陽極酸化して多孔質アルミナを形成することで、接合抵抗の減少により熱電冷却モジュールの効率を向上させることができる熱電冷却モジュールに関する。 The present invention relates to a thermoelectric cooling module and a method for manufacturing the same, and more specifically, by forming a porous alumina by anodizing an aluminum layer, the thermoelectric cooling module can improve the efficiency of the thermoelectric cooling module by reducing the junction resistance. It relates to a cooling module.
熱電素子とは、ゼーベック効果、ペルチェ効果、トムソン効果といった、熱と電気を相互に関係づける現象を利用した素子の総称であり、Ｐ型熱電材料とＮ型熱電材料を金属電極同士の間に接合させることにより、ＰＮ接合対を形成する構造である。このようなＰＮ接合対の間に温度差を設けると、ゼーベック効果(Ｓｅｅｂｅｃｋ ｅｆｆｅｃｔ)によって電力が発生し、これにより熱電素子は発電装置として機能をする。又、ＰＮ接合対のいずれか一方は冷却され、他方は発熱するペルチェ効果(Ｐｅｌｔｉｅｒ ｅｆｆｅｃｔ)により、熱電素子は温度制御装置として用いることもできる。 A thermoelectric element is a generic term for elements that use phenomena that correlate heat and electricity, such as the Seebeck effect, Peltier effect, and Thomson effect. A P-type thermoelectric material and an N-type thermoelectric material are joined between metal electrodes. By doing so, a PN junction pair is formed. When a temperature difference is provided between such a PN junction pair, electric power is generated by the Seebeck effect, whereby the thermoelectric element functions as a power generator. Also, the thermoelectric element can be used as a temperature control device due to the Peltier effect in which one of the PN junction pairs is cooled and the other generates heat.
ここで、上記ペルチェ効果は、図１に示すように、外部でＤＣ電圧を加えたときＰ型熱電材料の正孔とＮ型熱電材料の電子が移動することにより、材料の両端に発熱と吸熱を起こす現象である。上記ゼーベック効果は、図２に示すように、外部熱源から熱が供給されると、電子と正孔が移動しながら材料に流れが生じ、発電を起こす現象をいう。 Here, as shown in FIG. 1, when the DC voltage is applied externally, the Peltier effect causes the holes of the P-type thermoelectric material and the electrons of the N-type thermoelectric material to move, thereby generating heat and heat absorption at both ends of the material. It is a phenomenon that causes As shown in FIG. 2, the Seebeck effect refers to a phenomenon in which, when heat is supplied from an external heat source, electrons and holes move while a material flows while generating power.
このような熱電材料を用いた能動冷却は、素子の熱的安定性を改善させ、振動と騒音がなく、別の凝縮器と冷媒を使用しないため、体積が小さく、環境に優しい方法として認識されている。このような熱電材料を用いた能動冷却の応用分野には、無冷媒冷蔵庫、エアコン、種々のマイクロ冷却システムなどがあり、特に、種々のメモリ素子に熱電素子を装着すると、従来の冷却方式に比べて体積は減らしながら、素子を均一で且つ安定した温度に維持させることが可能であるので、素子の性能を向上させることができる。 Active cooling using such thermoelectric materials improves the thermal stability of the device, is free of vibration and noise, and uses no separate condenser and refrigerant, so it is recognized as a small volume and environmentally friendly method. ing. Applications of active cooling using such thermoelectric materials include refrigerant-free refrigerators, air conditioners, various micro-cooling systems, etc. Especially when thermoelectric elements are mounted on various memory elements, compared to conventional cooling methods. Thus, the device performance can be improved because the device can be maintained at a uniform and stable temperature while reducing the volume.
以下、従来技術による熱電モジュールの構成を添付の図面を参照して説明する。 Hereinafter, a configuration of a thermoelectric module according to the prior art will be described with reference to the accompanying drawings.
図３は、従来技術による熱電モジュールの構成を示す縦断面図である。
図に示すように、上記熱電モジュールの上下面には絶縁基板の第１基板(下部基板)１１及び第２基板(上部基板)１２が備えられる。上記第１基板１１及び第２基板１２は、熱を放出又は吸熱する役割を行うものであり、一定の距離をおいて上下方に離隔された状態に維持される。
FIG. 3 is a longitudinal sectional view showing a configuration of a thermoelectric module according to the prior art.
As shown in the drawing, a first substrate (lower substrate) 11 and a second substrate (upper substrate) 12 which are insulating substrates are provided on the upper and lower surfaces of the thermoelectric module. The first substrate 11 and the second substrate 12 serve to release or absorb heat, and are maintained in a state of being spaced apart from each other at a certain distance.
上記第１基板１１及び第２基板１２との間には、Ｐ型熱電素子４１とＮ型熱電素子４２が備えられる。上記Ｐ型熱電素子４１及びＮ型熱電素子４２は、熱電材料が一定の形状及び大きさを有するように形成される要素であって、上記第１基板１１と第２基板１２との間に交互に配置される。 A P-type thermoelectric element 41 and an N-type thermoelectric element 42 are provided between the first substrate 11 and the second substrate 12. The P-type thermoelectric element 41 and the N-type thermoelectric element 42 are elements formed so that the thermoelectric material has a certain shape and size, and are alternately arranged between the first substrate 11 and the second substrate 12. Placed in.
上記Ｐ型熱電素子４１及びＮ型熱電素子４２と第１基板１１及び第２基板１２との間には金属電極２０が備えられる。上記金属電極２０は、Ｐ型熱電素子４１とＮ型熱電素子４２とを電気的に接続させる構成である。 A metal electrode 20 is provided between the P-type thermoelectric element 41 and the N-type thermoelectric element 42 and the first substrate 11 and the second substrate 12. The metal electrode 20 is configured to electrically connect the P-type thermoelectric element 41 and the N-type thermoelectric element 42.
上記金属電極２０とＰ型熱電素子４１及びＮ型熱電素子４２との間には、金属の拡散を防ぐために拡散防止膜３０をさらに含むことができる。 A diffusion preventing film 30 may be further included between the metal electrode 20 and the P-type thermoelectric element 41 and the N-type thermoelectric element 42 to prevent metal diffusion.
このような従来の熱電モジュールは、特許文献１に開示されているように熱電モジュールから発散する熱を外部に発散したり、外部の熱を吸熱するために熱電素子の両側面に放熱板が取り付けられる。 In such a conventional thermoelectric module, as disclosed in Patent Document 1, heat radiating from the thermoelectric module is radiated to the outside, and heat sinks are attached to both side surfaces of the thermoelectric element to absorb the external heat. It is done.
このように、従来の電子製品などの放熱素子としての熱電モジュールは、発熱部位に放熱板を接合して発熱部位の熱を外部に放出するが、経時により発熱部位の温度が上がり、冷却面側への対流現象により熱平衡(ｔｈｅｒｍａｌ ｅｑｕｉｌｉｂｒｉｕｍ)状態になり、放熱素子としての役割を適切に果たすことができないという問題点が生じた。 As described above, the conventional thermoelectric module as a heat radiating element for electronic products, etc., dissipates heat from the heat generating part by joining the heat radiating plate to the heat generating part. Due to the convection phenomenon, a thermal equilibria state is reached, and there is a problem that it cannot properly serve as a heat dissipation element.
本発明は、上述した問題を解決するためになされたものであり、アルミニウムの陽極酸化により多孔質アルミナとアルミニウムが接触されている一体型構造である第１及び第２基板を形成することで、接合抵抗の減少により熱電冷却モジュールの効率を向上させることができ、コストの低減効果も実現できる熱電冷却モジュール及びその製造方法を提供することを目的とする。 The present invention has been made in order to solve the above-described problems, and by forming the first and second substrates having an integrated structure in which porous alumina and aluminum are in contact with each other by anodization of aluminum, It is an object of the present invention to provide a thermoelectric cooling module that can improve the efficiency of the thermoelectric cooling module by reducing the junction resistance, and that can also realize a cost reduction effect, and a manufacturing method thereof.
上述した課題を解決するために提供される本発明の熱電冷却モジュールは、金属電極が形成され互いに対向する第１基板及び第２基板と、第１基板及び第２基板との間に形成される複数の熱電素子とを含み、第１基板及び第２基板は、アルミニウム層と、アルミニウム層の互いに対向する面の一部に形成されるアルミナ(Ａｌ2Ｏ3)層と、を含む。 The thermoelectric cooling module of the present invention provided to solve the above-described problem is formed between a first substrate and a second substrate on which metal electrodes are formed and opposed to each other, and the first substrate and the second substrate. The first substrate and the second substrate each include a plurality of thermoelectric elements. The first substrate and the second substrate include an aluminum layer and an alumina (Al 2 O 3 ) layer formed on part of the surfaces of the aluminum layer facing each other.
本発明によると、放熱板としてのアルミニウム層と、陽極酸化法により形成された絶縁体であって、熱電素材の接合体として用いられるアルミナ層とを一体型に形成することにより、接合抵抗を減少させ、熱電冷却モジュールの効率性を向上させ、コストを低減させる効果を有するようになる。 According to the present invention, the junction resistance is reduced by integrally forming an aluminum layer as a heat sink and an alumina layer formed by an anodization method and used as a joined body of a thermoelectric material. Thus, the efficiency of the thermoelectric cooling module is improved and the cost is reduced.
以下、添付した図面を参照して本発明の望ましい実施例について詳しく説明する。但し、本発明はこれらにより限定されるものではない。本明細書に亘って同じ構成要素に対しては同じ符号を付す。 Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to these. Throughout the specification, the same components are denoted by the same reference numerals.
本発明は、アルミニウム層上に陽極酸化されたアルミナ層を形成した一体型の基板を備えることにより、接合抵抗の減少により効率を向上させ、コストを低減することができる熱電冷却モジュールを提供することをその要旨とする。 The present invention provides a thermoelectric cooling module that is provided with an integrated substrate having an anodized alumina layer formed on an aluminum layer, thereby improving efficiency by reducing junction resistance and reducing costs. Is the gist.
図４は、本発明の望ましい実施例による熱電冷却モジュールの断面図であり、図５及び図６は、本発明によりアルミニウムを陽極酸化して多孔質アルミナが形成された基板の斜視図及び断面図であり、図７及び図８は、基板の上部及び断面の実際のイメージを示すものであり、図９は、本発明の望ましい実施例による金属電極及び熱電素子が形成された基板の上面図である。 FIG. 4 is a cross-sectional view of a thermoelectric cooling module according to a preferred embodiment of the present invention, and FIGS. 5 and 6 are a perspective view and a cross-sectional view of a substrate on which porous alumina is formed by anodizing aluminum according to the present invention. 7 and 8 show actual images of the top and cross-section of the substrate, and FIG. 9 is a top view of the substrate on which the metal electrode and the thermoelectric element are formed according to the preferred embodiment of the present invention. is there.
図を参照すると、本発明の熱電冷却モジュール１００は、金属電極１３０が形成され互いに対向する第１及び第２基板１１０、１２０と、上記第１及び第２基板１１０、１２０の間に形成される複数の熱電素子１４１、１４２とを含んでなる。 Referring to the drawing, the thermoelectric cooling module 100 of the present invention is formed between the first and second substrates 110 and 120 facing each other on which the metal electrode 130 is formed, and the first and second substrates 110 and 120. A plurality of thermoelectric elements 141 and 142 are included.
特に、上記第１及び第２基板１１０、１２０は、図５ に示すように、アルミニウム層１１１、１２１及び陽極酸化により形成された多孔質アルミナ(Ａｌ2Ｏ3)層１１２、１２２からなり、上記アルミナ層１１２、１２２は、互いに対向するそれぞれのアルミニウム層１１１、１２１の一部に形成される。上記第１及び第２基板１１０、１２０は、アルミニウムとアルミナの一体型構造であって、上記アルミニウム層１１１、１２１は、放熱板の役割をして発熱部位の熱をシステムの外部に放熱させ、上記多孔質アルミナ層１１２、１２２は絶縁層であって、熱電素子１４１、１４２の接合体として用いられる。 In particular, the first and second substrates 110 and 120 include aluminum layers 111 and 121 and porous alumina (Al 2 O 3 ) layers 112 and 122 formed by anodization, as shown in FIG. The alumina layers 112 and 122 are formed on a part of the aluminum layers 111 and 121 facing each other. The first and second substrates 110 and 120 have an integrated structure of aluminum and alumina, and the aluminum layers 111 and 121 function as a heat sink to dissipate heat from the heat generating portion to the outside of the system. The porous alumina layers 112 and 122 are insulating layers and are used as a joined body of the thermoelectric elements 141 and 142.
従来の熱電冷却モジュールは、発熱部位に異種素材の放熱板を接合したが、本発明は、アルミニウムの陽極酸化によりアルミニウム-アルミナといった一体型の構造を実現することにより、接触抵抗を減少させ、熱電冷却モジュールの効率を向上させるのみでなく、コストの低減効果も達成することができる。 In the conventional thermoelectric cooling module, a heat sink made of different materials is joined to the heat generating part. However, the present invention realizes an integrated structure such as aluminum-alumina by anodization of aluminum, thereby reducing the contact resistance and reducing the thermoelectricity. Not only can the efficiency of the cooling module be improved, but also a cost reduction effect can be achieved.
この際、第１及び第２基板１１０、１２０に形成されたアルミナ層１１２、１２２は、互いに対向する構造であり、相互に対応する。したがって、第１及び第２基板１１０、１２０においてアルミナ層１１２、１２２は、互いに面積が同一であることが望ましく、形状及び厚さも同一であることが望ましいが、互いに必ずしも一致する必要はない。 At this time, the alumina layers 112 and 122 formed on the first and second substrates 110 and 120 are opposed to each other and correspond to each other. Therefore, the alumina layers 112 and 122 in the first and second substrates 110 and 120 preferably have the same area and the same shape and thickness, but they do not necessarily have to coincide with each other.
アルミニウム層１１１、１２１とアルミナ層１１２、１２２からなる第１及び第２基板１１０、１２０は、図５及び図９に示すように円形に形成することも可能であるが、これに限定されるのではなく、楕円形又は四角形などの多角形に形成することができることは勿論である。 The first and second substrates 110 and 120 formed of the aluminum layers 111 and 121 and the alumina layers 112 and 122 can be formed in a circular shape as shown in FIGS. 5 and 9, but are not limited thereto. However, it is of course possible to form an oval or a polygon such as a rectangle.
上記アルミナ層１１２、１２２の厚さ(ｄ)は３０〜２００μｍであることが望ましく、３０μｍ未満である場合には、電気伝導度が存在して絶縁体としての役割を果たすことができなくなる。 The thickness (d) of the alumina layers 112 and 122 is preferably 30 to 200 μm. When the thickness is less than 30 μm, electrical conductivity exists and cannot function as an insulator.
又、上記第１及び第２基板１１０、１２０においてアルミナ層１１２、１２２の面積は、上記アルミニウム層１１１、１２１の面積の５〜５０％であることが望ましい。これは、アルミナ層１１２、１２２の面積がアルミニウム層１１１、１２１の面積の５０％を超えると、発熱部位の熱が冷却部位に拡散され、冷却部位の温度が上昇して放熱素子としての役割を果たすことができなくなるからであり、５％以下である場合には、熱電素子１４１、１４２の接続が困難になる。 In the first and second substrates 110 and 120, the area of the alumina layers 112 and 122 is preferably 5 to 50% of the area of the aluminum layers 111 and 121. This is because when the area of the alumina layers 112, 122 exceeds 50% of the area of the aluminum layers 111, 121, the heat of the heat generating part is diffused to the cooling part, and the temperature of the cooling part rises to serve as a heat dissipation element. This is because the thermoelectric elements 141 and 142 are difficult to connect when the ratio is 5% or less.
金属電極１３０は、上記第１及び第２基板１１０、１２０においてアルミナ層１１２、１２２上に形成され、複数のＰ型熱電素子１４１とＮ型熱電素子１４２が互いに離隔されて上記金属電極１３０を介して電気的に接続される。上記金属電極１３０は、Ｃｕ、Ａｕ、Ａｇ、Ｎｉ、Ａｌ、Ｃｒ、Ｒｕ、Ｒｅ、Ｐｂ、Ｓｎ、Ｉｎ、及びＺｎを含む群から選択される少なくとも１種の金属又はこれらの金属を含む合金で形成することができ、Ｐ型及びＮ型熱電素子１４１、１４２は、当該技術分野において一般的に用いられる材料、例えば、ＢｉＴｅ系材料、ＰｂＴｅ系材料などの熱電材料を適宜ドープして用いることができる。 The metal electrode 130 is formed on the alumina layers 112 and 122 in the first and second substrates 110 and 120, and a plurality of P-type thermoelectric elements 141 and N-type thermoelectric elements 142 are separated from each other via the metal electrode 130. Are electrically connected. The metal electrode 130 is at least one metal selected from the group including Cu, Au, Ag, Ni, Al, Cr, Ru, Re, Pb, Sn, In, and Zn, or an alloy including these metals. The P-type and N-type thermoelectric elements 141 and 142 can be formed by appropriately doping a material generally used in the technical field, for example, a thermoelectric material such as a BiTe-based material or a PbTe-based material. it can.
図示されていないが、上記金属電極１３０とＰ型及びＮ型熱電素子１４１、１４２の間に接着力を改善するためのバッファ層(図示せず)と金属の拡散を防止するための拡散防止膜(図示せず)をさらに含むことができ、上記拡散防止膜はニッケルであることが望ましい。 Although not shown, a buffer layer (not shown) for improving the adhesive force between the metal electrode 130 and the P-type and N-type thermoelectric elements 141 and 142 and a diffusion prevention film for preventing metal diffusion. (Not shown) may further be included, and the diffusion barrier film is preferably nickel.
図１０は、本発明の望ましい実施例による熱電冷却モジュールの製造方法を示すフローチャートである。図を参照すると、先ず、第１基板１１０及び第２基板１２０を形成する(Ｓ１０)。具体的には、用意したアルミニウム試験片にマスクを利用して、陽極酸化法によって(Ｓ１１)多孔質アルミナ層１１２、１２２を形成することにより(Ｓ１２)、アルミニウム-アルミナの一体型構造を有する第１基板及び第２基板１１０、１２０を製造する。上記アルミニウムの陽極酸化は、１ｗｔ％Ｈ3ＰＯ4(リン酸)、１℃で電圧１９５Ｖを１０時間以上印加して行われるものであり、この際、アルミナ層１１２、１２２が形成される面積は、上記アルミニウム層１１１、１２１の面積の５〜５０％であることが望ましく、アルミナ層１１２、１２２の厚さは３０〜２００μｍであることが望ましいが、これは上述した通りである。又、上記第１及び第２基板１１０、１２０においてアルミナ層１１２、１２２は、互いに同一の面積、形状、及び厚さを有するように形成されることが望ましい。 FIG. 10 is a flowchart illustrating a method of manufacturing a thermoelectric cooling module according to a preferred embodiment of the present invention. Referring to the drawing, first, a first substrate 110 and a second substrate 120 are formed (S10). Specifically, by using a mask on the prepared aluminum test piece and forming the porous alumina layers 112 and 122 by an anodic oxidation method (S11) (S12), an aluminum-alumina integrated structure is obtained. One substrate and second substrates 110 and 120 are manufactured. The anodic oxidation of aluminum is performed by applying a voltage of 195 V at 1 wt% H 3 PO 4 (phosphoric acid) at 1 ° C. for 10 hours or more. At this time, the area where the alumina layers 112 and 122 are formed is The area of the aluminum layers 111 and 121 is preferably 5 to 50%, and the thickness of the alumina layers 112 and 122 is preferably 30 to 200 μm, as described above. In the first and second substrates 110 and 120, the alumina layers 112 and 122 are preferably formed to have the same area, shape, and thickness.
その後、第１基板１１０及び第２基板１２０におけるアルミナ層１１２、１２２上に金属電極１３０を形成するが(Ｓ２０)、上記金属電極１３０は、Ｃｕ、Ａｕ、Ａｇ、Ｎｉ、Ａｌ、Ｃｒ、Ｒｕ、Ｒｅ、Ｐｂ、Ｓｎ、Ｉｎ、及びＺｎを含む群から選択される少なくとも１種の金属又はこれらの金属を含む合金で形成することができる。 Thereafter, a metal electrode 130 is formed on the alumina layers 112 and 122 of the first substrate 110 and the second substrate 120 (S20). The metal electrode 130 is formed of Cu, Au, Ag, Ni, Al, Cr, Ru, It can be formed of at least one metal selected from the group including Re, Pb, Sn, In, and Zn, or an alloy including these metals.
次いで、上記第１基板１１０の金属電極１３０上にＢｉＴｅ系材料、ＰｂＴｅ系材料などの熱電材料を適宜ドープしてＰ型及びＮ型熱電素子１４１、１４２を対で形成する(Ｓ３０)。 Next, a thermoelectric material such as a BiTe material or a PbTe material is appropriately doped on the metal electrode 130 of the first substrate 110 to form a pair of P-type and N-type thermoelectric elements 141 and 142 (S30).
この際、図示していないが、上記金属電極１３０とＰ型とＮ型熱電素子１４１、１４２との間に接着力を改善するためのバッファ層と金属の拡散を防止するための拡散防止膜を形成する工程をさらに含むことができる。 At this time, although not shown, a buffer layer for improving adhesion between the metal electrode 130 and the P-type and N-type thermoelectric elements 141 and 142 and a diffusion preventing film for preventing metal diffusion are provided. A forming step may be further included.
その後、下部基板である上記第１基板１１０における金属電極１３０上に形成されたＰ型及びＮ型熱電素子１４１、１４２が電気的に接続されるように金属電極１３０が形成されている上部基板、すなわち、第２基板１２０を接合して(Ｓ４０)熱電冷却モジュールを製造する。 Thereafter, the upper substrate on which the metal electrode 130 is formed so that the P-type and N-type thermoelectric elements 141 and 142 formed on the metal electrode 130 in the first substrate 110 as the lower substrate are electrically connected, That is, the thermoelectric cooling module is manufactured by bonding the second substrate 120 (S40).
図１１〜図１４は、本発明の望ましい実施例による熱電冷却モジュールの製造方法を示す製造工程図である。 11 to 14 are manufacturing process diagrams illustrating a method of manufacturing a thermoelectric cooling module according to a preferred embodiment of the present invention.
図を参照すると、互いに対向する第１基板１１０及び第２基板１２０は、アルミニウム層１１１、１２１の一部に陽極酸化によって形成されたアルミナ層１１２、１２２からなる。上記アルミニウムの陽極酸化は、１ｗｔ％Ｈ3ＰＯ4(リン酸)、１℃で電圧１９５Ｖを１０時間以上印加して行うことができる。上記第１基板１１０及び第２基板１２０は図５及び図９に示すように円形であり、楕円形又は四角形などの多角形の構造を有することもできるが、以下の説明では、図５及び図９に示すように円形である場合を前提として説明する。 Referring to the figure, the first substrate 110 and the second substrate 120 facing each other are made of alumina layers 112 and 122 formed by anodic oxidation on a part of the aluminum layers 111 and 121. The anodic oxidation of the aluminum can be performed by applying a voltage of 195 V at 1 ° C. for 10 hours or more at 1 wt% H 3 PO 4 (phosphoric acid). The first substrate 110 and the second substrate 120 are circular as shown in FIGS. 5 and 9, and may have an elliptical shape or a polygonal structure such as a quadrangle. In the following description, FIG. Description will be made on the assumption that the shape is circular as shown in FIG.
この際、アルミナ層１１２、１２２の厚さは３０〜２００μｍであることが望ましく、アルミナ層１１２、１２２の面積は、アルミニウム層１１１、１２１の面積の５〜５０％であることが望ましい。図１１に示すように、第１及び第２基板１１０、１２０においてアルミナ層１１２、１２２の厚さ、形状、及び、面積は同一であることが望ましいが、互いに必ずしも一致する必要はない。 At this time, the thickness of the alumina layers 112 and 122 is desirably 30 to 200 μm, and the area of the alumina layers 112 and 122 is desirably 5 to 50% of the area of the aluminum layers 111 and 121. As shown in FIG. 11, the thickness, shape, and area of the alumina layers 112 and 122 in the first and second substrates 110 and 120 are desirably the same, but they do not necessarily need to match each other.
その後、第１及び第２基板１１０、１２０においてアルミナ層１１２、１２２上に金属電極１３０を形成し、複数のＰ型及びＮ型熱電素子１４１、１４２を相互に接続対になるように上記第１基板１１０上に形成された金属電極１３０上に形成する。図１３には、一対のＰ型及びＮ型の熱電素子のみが図示されているが、これは前述のように、第１基板１１０は円形であることを前提としたので、図１３の上面図は図９と同一である。したがって、図９に示すように、一対のＰ型及びＮ型熱電素子１４１、１４２が前後に配置されることも可能であり、一列に配置されることも可能であり、このような配置形態には制限がない。この際、金属の拡散を防止するために金属電極１３０とＰ型及びＮ型熱電素子１４１、１４２の間に拡散防止膜を形成する工程をさらに含むことができる。 Thereafter, a metal electrode 130 is formed on the alumina layers 112 and 122 in the first and second substrates 110 and 120, and the first and second thermoelectric elements 141 and 142 are connected to each other to form the first pair. It is formed on the metal electrode 130 formed on the substrate 110. FIG. 13 shows only a pair of P-type and N-type thermoelectric elements. As described above, since the first substrate 110 is assumed to be circular, the top view of FIG. Is the same as FIG. Therefore, as shown in FIG. 9, a pair of P-type and N-type thermoelectric elements 141 and 142 can be arranged in front and back, and can also be arranged in a row. There is no limit. At this time, in order to prevent diffusion of the metal, a step of forming a diffusion prevention film between the metal electrode 130 and the P-type and N-type thermoelectric elements 141 and 142 may be further included.
次いで、複数のＰ型及びＮ型熱電素子１４１、１４２は、金属電極１３０を介してそれぞれの一端が電気的に接続されるように第２基板１２０を接合する。 Next, the plurality of P-type and N-type thermoelectric elements 141 and 142 are bonded to the second substrate 120 such that one ends of the P-type and N-type thermoelectric elements 141 and 142 are electrically connected via the metal electrode 130.
このように、本発明は、アルミニウムの陽極酸化によりアルミニウム-アルミナの一体型構造の基板１１０、１２０を実現することで、接触抵抗の減少により熱電冷却モジュールの効率を向上させ、且つコストの低減効果を達成することができる。 As described above, the present invention realizes the aluminum-alumina monolithic substrates 110 and 120 by anodizing aluminum, thereby improving the efficiency of the thermoelectric cooling module by reducing the contact resistance and reducing the cost. Can be achieved.
[実験例１] アルミナの厚さによる電気伝導度
アルミニウムの自然酸化により形成された１０ｎｍ厚さのアルミナ層、及びアルミニウムを陽極酸化して形成された２０μｍ及び３０μｍ厚さのアルミナ層による電気伝導度(＝厚さ/｛抵抗×面積｝)[Ｓ/ｍ]を比較実験して以下の表１の結果を得た。ここで、アルミニウムシートの直径は４ｃｍであり、厚さは１ｃｍであり、陽極酸化されたアルミナの面積は１２.５６ｃｍ2(直径２ｃｍ)である。
[Experimental Example 1] Electrical Conductivity by Alumina Thickness Electrical Conductivity by 10 nm Thickness Alumina Layer Formed by Natural Oxidation of Aluminum and 20 μm and 30 μm Thickness Alumina Layers Formed by Anodizing Aluminum A comparison experiment of (= thickness / {resistance × area}) [S / m] was performed, and the results shown in Table 1 below were obtained. Here, the diameter of the aluminum sheet is 4 cm, the thickness is 1 cm, and the area of the anodized alumina is 12.56 cm 2 (diameter 2 cm).
[実験例２] アルミニウム層とアルミナ層との面積比率による経時温度変化
ＬＥＤに取り付けられた熱電冷却モジュールのサンプルによる時間別の冷却部位の温度変化を比較観察し、表２の結果が得られた。ここで、サンプルＡは、アルミナの面積がアルミニウムの面積の１００％、サンプルＢは、アルミナの面積がアルミニウムの面積の５０％である場合であって、電力は同一に０.３７Ｗ(１.０Ｖ×０.３７Ａ)を印加した。
[Experimental example 2] Temperature change with time depending on the area ratio of the aluminum layer and the alumina layer The temperature change of the cooling part according to time by the sample of the thermoelectric cooling module attached to the LED was comparatively observed, and the result of Table 2 was obtained . Here, sample A is the case where the area of alumina is 100% of the area of aluminum, and sample B is the case where the area of alumina is 50% of the area of aluminum, and the power is the same 0.37 W (1.0 V). X 0.37 A) was applied.
１１、１１０ 第１基板
１２、１２０ 第２基板
２０、１３０ 金属電極
３０ 拡散防止膜
４１、１４１ Ｐ型熱電素子
４２、１４２ Ｎ型熱電素子
１１１、１２１ アルミニウム層
１１２、１２２ アルミナ層
11, 110 First substrate 12, 120 Second substrate 20, 130 Metal electrode 30 Diffusion prevention film 41, 141 P-type thermoelectric element 42, 142 N-type thermoelectric element 111, 121 Aluminum layer 112, 122 Alumina layer
Claims (6)
前記第１基板及び第２基板との間に形成される複数の熱電素子とを含み、
前記第１基板及び第２基板は、
アルミニウム層と、
前記アルミニウム層の互いに対向する面の一部に形成されるアルミナ(Ａｌ2Ｏ3)層とを含む、熱電冷却モジュール。 A first substrate and a second substrate formed with metal electrodes and facing each other;
A plurality of thermoelectric elements formed between the first substrate and the second substrate;
The first substrate and the second substrate are:
An aluminum layer;
A thermoelectric cooling module comprising: an alumina (Al 2 O 3 ) layer formed on a part of the mutually facing surfaces of the aluminum layer.
前記アルミニウムの面積の５〜５０％である、請求項１又は請求項２に記載の熱電冷却モジュール。 The area of the alumina layer is
The thermoelectric cooling module according to claim 1 or 2, which is 5 to 50% of an area of the aluminum.
Ｃｕ、Ａｕ、Ａｇ、Ｎｉ、Ａｌ、Ｃｒ、Ｒｕ、Ｒｅ、Ｐｂ、Ｓｎ、Ｉｎ、及びＺｎを含む群から選択される少なくとも１種の金属又はこれらの金属を含む合金からなる、請求項１〜請求項４のうちいずれか一項に記載の熱電冷却モジュール。 The metal electrode is
It consists of at least 1 type of metal selected from the group containing Cu, Au, Ag, Ni, Al, Cr, Ru, Re, Pb, Sn, In, and Zn, or an alloy containing these metals. The thermoelectric cooling module according to claim 4.
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| JP2019102808A (en) * | 2017-12-06 | 2019-06-24 | 三菱マテリアル株式会社 | Insulating heat transfer substrate, thermoelectric conversion module, and method of manufacturing insulating heat transfer substrate |
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| JP7200616B2 (en) | 2017-12-06 | 2023-01-10 | 三菱マテリアル株式会社 | Insulated heat transfer substrate, thermoelectric conversion module, and method for manufacturing insulated heat transfer substrate |
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| KR102040504B1 (en) * | 2018-02-22 | 2019-11-05 | 이배근 | method and apparatus of manufacturing substrate material for thermoelectric module |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140002158A (en) | 2014-01-08 |
| KR101998697B1 (en) | 2019-07-10 |
| JP6275962B2 (en) | 2018-02-07 |
| CN103515522A (en) | 2014-01-15 |
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