CN108364958A - Tft基板及其制作方法与oled基板 - Google Patents

Tft基板及其制作方法与oled基板 Download PDF

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CN108364958A
CN108364958A CN201810143002.4A CN201810143002A CN108364958A CN 108364958 A CN108364958 A CN 108364958A CN 201810143002 A CN201810143002 A CN 201810143002A CN 108364958 A CN108364958 A CN 108364958A
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layer
drain electrode
tft substrate
interlayer dielectric
source
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喻蕾
李松杉
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201810143002.4A priority Critical patent/CN108364958A/zh
Priority to PCT/CN2018/079359 priority patent/WO2019153430A1/zh
Priority to US15/771,047 priority patent/US10446630B2/en
Publication of CN108364958A publication Critical patent/CN108364958A/zh
Priority to US16/556,141 priority patent/US10879328B2/en
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Abstract

本发明提供一种TFT基板及其制作方法与OLED基板。本发明的TFT基板的制作方法通过将层间介电层设置为两层氧化硅层夹合一层氮化硅层的结构，不仅能够保证层间介电层与栅极之间具有较好的结合效果，还能够保证层间介电层与源极和漏极之间具有较好的结合效果，避免在源极和漏极的退火制程中所述源极和漏极从层间介电层上脱落，提升TFT基板的生产良率。本发明的TFT基板采用上述TFT基板的制作方法制得，生产良率高，且具有较好的产品品质。本发明的OLED基板生产良率高，且具有较好的产品品质。

Description

TFT基板及其制作方法与OLED基板
技术领域
本发明涉及显示技术领域，尤其涉及一种TFT基板及其制作方法与OLED基板。
背景技术
平面显示器件具有机身薄、省电、无辐射等众多优点，得到了广泛的应用。现有的平面显示器件主要包括液晶显示器件(Liquid Crystal Display，LCD)及有机电致发光显示器件(Organic Light Emitting Display，OLED)。
OLED显示器件以其自发光、全固态、高对比度等优点，成为近年来最具潜力的新型显示器件。而OLED显示器件最大的特点在于可以实现柔性显示，采用柔性衬底制成重量轻、可弯曲、便于携带的柔性显示器件是OLED显示器件的重要发展方向。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
图1为现有的AMOLED基板的结构示意图，如图1所示，所述AMOLED基板包括衬底基板110、设于衬底基板110上的缓冲层120、设于缓冲层120上的有源层200、位于有源层200与缓冲层120上的栅极绝缘层310、位于栅极绝缘层310上的栅极320、位于栅极320与栅极绝缘层310上的层间介电层400、位于层间介电层400上的源极510与漏极520、位于源极510、漏极520、层间介电层400上的平坦层600、位于平坦层600上的阳极710与像素定义层800、位于阳极710上的OLED发光层910。
其中，所述层间介电层400通常包括设于所述栅极320与栅极绝缘层310上的氧化硅(SiOx)层410与设于所述氧化硅层410上的氮化硅(SiNx)层430。所述氧化硅层410与栅极320之间具有较好的结合力，所述氮化硅层430用于对有源层200进行补氢。所述源极510与漏极520通常包括铝(Al)薄膜及分别位于所述铝薄膜两侧的钛(Ti)薄膜。所述AMOLED基板的制作过程中，制得所述源极510与漏极520之后，通常需要对所述源极510与漏极520进行退火处理，以降低所述源极510与漏极520和有源层200之间的接触阻抗，提升电性连接效果，由于所述源极510与漏极520中的钛薄膜和所述层间介电层400中的氮化硅层430之间的结合力较弱，在退火过程中，所述源极510与漏极520和所述层间介电层400之间的结合力会在高温制程中下降，造成所述源极510与漏极520从所述层间介电层400上脱落的现象，从而降低AMOLED基板的生产良率。
发明内容
本发明的目的在于提供一种TFT基板的制作方法，能够避免在源极和漏极的退火制程中所述源极和漏极从层间介电层上脱落，提升TFT基板的生产良率。
本发明的目的还在于提供一种TFT基板，生产良率高，且具有较好的产品品质。
本发明的目的还在于提供一种OLED基板，生产良率高，且具有较好的产品品质。
为实现上述目的，本发明提供一种TFT基板的制作方法，包括如下步骤：
步骤1、提供衬底基板，在所述衬底基板上沉积缓冲层，在所述缓冲层上形成有源层；
在所述有源层与缓冲层上沉积栅极绝缘层，在所述栅极绝缘层上形成栅极；
步骤2、在所述栅极与栅极绝缘层上沉积层间介电层，所述层间介电层包括在所述栅极与栅极绝缘层上从下至上依次层叠设置的第一氧化硅层、第一氮化硅层、第二氧化硅层；
步骤3、对所述层间介电层与栅极绝缘层进行图形化处理，在所述层间介电层与栅极绝缘层上形成分别对应于有源层的两端的源极接触孔与漏极接触孔；
在所述层间介电层上形成源极与漏极，所述源极与漏极分别通过源极接触孔与漏极接触孔和有源层的两端相接触，制得TFT基板。
所述步骤2还包括：对层间介电层进行快速热退火处理。
所述快速热退火处理的退火温度为480-510℃，保温时间为10-20min。
所述第一氧化硅层、第一氮化硅层、第二氧化硅层均采用化学气相沉积方法形成。
所述步骤3还包括：对所述源极与漏极进行退火处理。
所述源极与漏极均包括源漏极金属层，所述源漏极金属层包括铝薄膜及分别位于所述铝薄膜两侧的钛薄膜。
本发明还提供一种TFT基板，包括：衬底基板、位于衬底基板上的缓冲层、位于缓冲层上的有源层、位于有源层与缓冲层上的栅极绝缘层、位于栅极绝缘层上的栅极、位于栅极与栅极绝缘层上的层间介电层、位于层间介电层上的源极与漏极；
所述层间介电层与栅极绝缘层上设有分别对应于有源层的两端的源极接触孔与漏极接触孔；所述源极与漏极分别通过源极接触孔与漏极接触孔和有源层的两端相接触；
所述层间介电层包括在所述栅极与栅极绝缘层上从下至上依次层叠设置的第一氧化硅层、第一氮化硅层、第二氧化硅层。
所述源极与漏极均包括源漏极金属层，所述源漏极金属层包括铝薄膜及分别位于所述铝薄膜两侧的钛薄膜。
本发明还提供一种OLED基板，包括如上文所述的TFT基板，还包括位于所述TFT基板的源极、漏极、层间介电层上的平坦层、位于平坦层上的阳极与像素定义层、位于阳极上的OLED发光层；
所述平坦层上设有对应于漏极上方的第一过孔，所述阳极经由第一过孔与漏极相接触；
所述像素定义层上设有对应于阳极上方的第二过孔，所述OLED发光层设于所述第二过孔内。
本发明的有益效果：本发明提供一种TFT基板及其制作方法与OLED基板及其制作方法。本发明的TFT基板的制作方法通过将层间介电层设置为两层氧化硅层夹合一层氮化硅层的结构，不仅能够保证层间介电层与栅极之间具有较好的结合效果，还能够保证层间介电层与源极和漏极之间具有较好的结合效果，避免在源极和漏极的退火制程中所述源极和漏极从层间介电层上脱落，提升TFT基板的生产良率。本发明的TFT基板采用上述TFT基板的制作方法制得，生产良率高，且具有较好的产品品质。本发明的OLED基板生产良率高，且具有较好的产品品质。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的AMOLED基板的结构示意图；
图2为本发明的TFT基板的制作方法的流程图；
图3为本发明的TFT基板的制作方法的步骤1的示意图；
图4为本发明的TFT基板的制作方法的步骤2的示意图；
图5为本发明的TFT基板的制作方法的步骤3的示意图及本发明的TFT基板的结构示意图；
图6为本发明的OLED基板的制作方法的流程图；
图7为本发明的OLED基板的制作方法的步骤20的示意图；
图8为本发明的OLED基板的制作方法的步骤30的示意图及本发明的OLED基板的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明还提供一种TFT基板的制作方法，包括如下步骤：
步骤1、如图3所示，提供衬底基板11，在所述衬底基板11上沉积缓冲层12，在所述缓冲层12上形成有源层20；
在所述有源层20与缓冲层12上沉积栅极绝缘层31，在所述栅极绝缘层31上形成栅极32。
具体的，所述衬底基板11为玻璃基板。
具体的，所述步骤1中，采用化学气相沉积方法(CVD)沉积缓冲层12。
具体的，所述缓冲层12包括位于所述衬底基板11上的氮化硅(SiNx)层及位于所述氮化硅(SiNx)层上的氧化硅(SiOx)层。
具体的，在所述缓冲层12上形成有源层20的方法为：采用化学气相沉积方法在所述缓冲层12上形成非晶硅层，对所述非晶硅层进行去氢处理后，利用准分子激光退火方法(ELA，Excimer Laser Anneal)将所述非晶硅层结晶转化为多晶硅层，对所述多晶硅层进行图形化处理后，得到有源层20。
具体的，采用退火方式对所述非晶硅层进行去氢处理。
具体的，所述栅极绝缘层31为氧化硅(SiOx)层。
具体的，所述步骤1中，在所述栅极绝缘层31上形成栅极32的方法包括：采用物理气相沉积方法(PVD)在所述栅极绝缘层31上沉积栅极金属层，对所述栅极金属层进行图形化处理，得到栅极32。
具体的，所述栅极32的材料为金属钼(Mo)。
步骤2、如图4所示，在所述栅极32与栅极绝缘层31上沉积层间介电层40，所述层间介电层40包括在所述栅极32与栅极绝缘层31上从下至上依次层叠设置的第一氧化硅层41、第一氮化硅层43、第二氧化硅层42。
具体的，所述第一氧化硅层41、第一氮化硅层43、第二氧化硅层42均通过化学气相沉积法制备，其中，所述第一氮化硅层43的化学气相沉积反应气体包括氨气与硅烷气体，由于氨气与硅烷气体中均含有氢元素，因此制得的第一氮化硅层43中含有氢元素。
具体的，所述第一氧化硅层41与栅极32之间具有较好的结合力，使得所述层间介电层40与栅极32之间的结合效果较好，所述第一氮化硅层43能够在层间介电层40的退火制程中对有源层20进行补氢，所述第二氧化硅层42与后续制得的源极51和漏极52之间具有较好的结合力，使得所述层间介电层40与源极51和漏极52之间的结合效果较好，避免在源极51和漏极52的退火制程中所述源极51和漏极52从层间介电层40上脱落。
具体的，所述步骤2还包括：对层间介电层40进行快速热退火处理(RTA)，使层间介电层40中的第一氮化硅层43中的氢扩散至有源层20中，对多晶硅进行补氢，进一步减少多晶硅的缺陷，使TFT工作更稳定。
具体的，所述快速热退火处理(RTA)的退火温度为480-510℃，优选为490℃，保温时间为10-20min。
具体的，所述第一氧化硅层41、第一氮化硅层43、第二氧化硅层42均采用化学气相沉积方法(CVD)形成。
步骤3、如图5所示，对所述层间介电层40与栅极绝缘层31进行图形化处理，在所述层间介电层40与栅极绝缘层31上形成分别对应于有源层20的两端的源极接触孔41与漏极接触孔42；
在所述层间介电层40上形成源极51与漏极52，所述源极51与漏极52分别通过源极接触孔41与漏极接触孔42和有源层20的两端相接触，制得TFT基板10。
具体的，所述步骤3还包括：对所述源极51与漏极52进行退火处理，以降低所述源极51与漏极52和有源层20之间的接触阻抗，提升电性连接效果。
具体的，对所述源极51与漏极52进行退火处理的退火温度为300℃～400℃，优选为350℃。
具体的，所述源极51与漏极52均包括源漏极金属层，所述源漏极金属层包括铝(Al)薄膜及分别位于所述铝薄膜两侧的钛(Ti)薄膜。
具体的，在所述层间介电层40上形成源极51与漏极52的方法包括：采用物理气相沉积方法(PVD)在所述层间介电层40上沉积源漏极金属层，对所述源漏极金属层进行图形化处理，得到源极51与漏极52。
上述TFT基板的制作方法通过将层间介电层40设置为两层氧化硅层夹合一层氮化硅层的结构，不仅能够保证层间介电层40与栅极32之间具有较好的结合效果，还能够保证层间介电层40与源极51和漏极52之间具有较好的结合效果，避免在源极51和漏极52的退火制程中所述源极51和漏极52从层间介电层40上脱落，提升TFT基板10的生产良率。
请参阅图5，基于上述TFT基板的制作方法，本发明还提供一种TFT基板10，包括：衬底基板11、位于衬底基板11上的缓冲层12、位于缓冲层12上的有源层20、位于有源层20与缓冲层12上的栅极绝缘层31、位于栅极绝缘层31上的栅极32、位于栅极32与栅极绝缘层31上的层间介电层40、位于层间介电层40上的源极51与漏极52；
所述层间介电层40与栅极绝缘层31上设有分别对应于有源层20的两端的源极接触孔41与漏极接触孔42；所述源极51与漏极52分别通过源极接触孔41与漏极接触孔42和有源层20的两端相接触；
所述层间介电层40包括在所述栅极32与栅极绝缘层31上从下至上依次层叠设置的第一氧化硅层41、第一氮化硅层43、第二氧化硅层42。
具体的，所述缓冲层12包括位于所述衬底基板11上的氮化硅(SiNx)层及位于所述氮化硅(SiNx)层上的氧化硅(SiOx)层。
具体的，所述栅极绝缘层31为氧化硅(SiOx)层。
具体的，所述栅极32的材料为金属钼(Mo)。
具体的，所述源极51与漏极52均包括源漏极金属层，所述源漏极金属层包括铝(Al)薄膜及分别位于所述铝薄膜两侧的钛(Ti)薄膜。
具体的，所述有源层20的材料为多晶硅。
上述TFT基板通过将层间介电层40设置为两层氧化硅层夹合一层氮化硅层的结构，不仅能够保证层间介电层40与栅极32之间具有较好的结合效果，还能够保证层间介电层40与源极51和漏极52之间具有较好的结合效果，在源极51和漏极52的退火制程中所述源极51和漏极52不会从层间介电层40上脱落，保证该TFT基板10具有较高的生产良率。
请参阅图6，基于上述TFT基板的制作方法，本发明还提供一种OLED基板的制作方法，包括如下步骤：
步骤10、采用上述TFT基板的制作方法制备TFT基板10。
步骤20、如图7所示，在所述TFT基板10的源极51、漏极52、层间介电层40上形成平坦层60，并对平坦层60进行图形化处理，在所述平坦层60上形成对应于漏极52上方的第一过孔61；
在所述平坦层60上形成阳极71，所述阳极71经由第一过孔61与漏极52相接触。
具体的，所述阳极71包括银(Ag)薄膜及分别位于所述银薄膜两侧的氧化铟锡薄膜(ITO)。
步骤30、如图8所示，在所述阳极71与平坦层60上形成像素定义层80，在所述像素定义层80上形成对应于所述阳极71上方的第二过孔82，在所述第二过孔82内形成位于所述阳极71上的OLED发光层91，制得OLED基板90。
具体的，所述像素定义层80与平坦层60的材料为相同的有机光阻材料，所述有机光阻材料包含聚酰亚胺(polyimide)。
具体的，所述OLED发光层91采用蒸镀制程形成。
本发明的OLED基板的制作方法采用上述TFT基板的制作方法制备TFT基板10，能够提高OLED基板90的生产良率，并提升产品品质。
请参阅图8，基于上述OLED基板的制作方法，本发明还提供一种OLED基板90，包括如图5所示的TFT基板10，还包括位于所述TFT基板10的源极51、漏极52、层间介电层40上的平坦层60、位于平坦层60上的阳极71与像素定义层80、位于阳极71上的OLED发光层91；
所述平坦层60上设有对应于漏极52上方的第一过孔61，所述阳极71经由第一过孔61与漏极52相接触；
所述像素定义层80上设有对应于阳极71上方的第二过孔82，所述OLED发光层91设于所述第二过孔82内。
具体的，所述阳极71包括银(Ag)薄膜及分别位于所述银薄膜两侧的氧化铟锡薄膜(ITO)。
具体的，所述像素定义层80与平坦层60的材料为相同的有机光阻材料，所述有机光阻材料包含聚酰亚胺(polyimide)。
本发明的OLED基板采用上述OLED基板的制作方法制得，生产良率高，且具有较好的产品品质。
综上所述，本发明提供一种TFT基板及其制作方法与OLED基板及其制作方法。本发明的TFT基板的制作方法通过将层间介电层设置为两层氧化硅层夹合一层氮化硅层的结构，不仅能够保证层间介电层与栅极之间具有较好的结合效果，还能够保证层间介电层与源极和漏极之间具有较好的结合效果，避免在源极和漏极的退火制程中所述源极和漏极从层间介电层上脱落，提升TFT基板的生产良率。本发明的TFT基板采用上述TFT基板的制作方法制得，生产良率高，且具有较好的产品品质。本发明的OLED基板的制作方法采用上述TFT基板的制作方法制备TFT基板，能够提高OLED基板的生产良率，并提升产品品质。本发明的OLED基板采用上述OLED基板的制作方法制得，生产良率高，且具有较好的产品品质。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (9)

1.一种TFT基板的制作方法，其特征在于，包括如下步骤：
步骤1、提供衬底基板(11)，在所述衬底基板(11)上沉积缓冲层(12)，在所述缓冲层(12)上形成有源层(20)；
在所述有源层(20)与缓冲层(12)上沉积栅极绝缘层(31)，在所述栅极绝缘层(31)上形成栅极(32)；
步骤2、在所述栅极(32)与栅极绝缘层(31)上沉积层间介电层(40)，所述层间介电层(40)包括在所述栅极(32)与栅极绝缘层(31)上从下至上依次层叠设置的第一氧化硅层(41)、第一氮化硅层(43)、第二氧化硅层(42)；
步骤3、对所述层间介电层(40)与栅极绝缘层(31)进行图形化处理，在所述层间介电层(40)与栅极绝缘层(31)上形成分别对应于有源层(20)的两端的源极接触孔(41)与漏极接触孔(42)；
在所述层间介电层(40)上形成源极(51)与漏极(52)，所述源极(51)与漏极(52)分别通过源极接触孔(41)与漏极接触孔(42)和有源层(20)的两端相接触，制得TFT基板(10)。
2.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤2还包括：对层间介电层(40)进行快速热退火处理。
3.如权利要求2所述的TFT基板的制作方法，其特征在于，所述快速热退火处理的退火温度为480-510℃，保温时间为10-20min。
4.如权利要求1所述的TFT基板的制作方法，其特征在于，所述第一氧化硅层(41)、第一氮化硅层(43)、第二氧化硅层(42)均采用化学气相沉积方法形成。
5.如权利要求1所述的TFT基板的制作方法，其特征在于，所述步骤3还包括：对所述源极(51)与漏极(52)进行退火处理。
6.如权利要求1所述的TFT基板的制作方法，其特征在于，所述源极(51)与漏极(52)均包括源漏极金属层，所述源漏极金属层包括铝薄膜及分别位于所述铝薄膜两侧的钛薄膜。
7.一种TFT基板(10)，其特征在于，包括：衬底基板(11)、位于衬底基板(11)上的缓冲层(12)、位于缓冲层(12)上的有源层(20)、位于有源层(20)与缓冲层(12)上的栅极绝缘层(31)、位于栅极绝缘层(31)上的栅极(32)、位于栅极(32)与栅极绝缘层(31)上的层间介电层(40)、位于层间介电层(40)上的源极(51)与漏极(52)；
所述层间介电层(40)与栅极绝缘层(31)上设有分别对应于有源层(20)的两端的源极接触孔(41)与漏极接触孔(42)；所述源极(51)与漏极(52)分别通过源极接触孔(41)与漏极接触孔(42)和有源层(20)的两端相接触；
所述层间介电层(40)包括在所述栅极(32)与栅极绝缘层(31)上从下至上依次层叠设置的第一氧化硅层(41)、第一氮化硅层(43)、第二氧化硅层(42)。
8.如权利要求7所述的TFT基板(10)，其特征在于，所述源极(51)与漏极(52)均包括源漏极金属层，所述源漏极金属层包括铝薄膜及分别位于所述铝薄膜两侧的钛薄膜。
9.一种OLED基板(90)，其特征在于，包括如权利要求7所述的TFT基板(10)，还包括位于所述TFT基板(10)的源极(51)、漏极(52)、层间介电层(40)上的平坦层(60)、位于平坦层(60)上的阳极(71)与像素定义层(80)、位于阳极(71)上的OLED发光层(91)；
所述平坦层(60)上设有对应于漏极(52)上方的第一过孔(61)，所述阳极(71)经由第一过孔(61)与漏极(52)相接触；
所述像素定义层(80)上设有对应于阳极(71)上方的第二过孔(82)，所述OLED发光层(91)设于所述第二过孔(82)内。
CN201810143002.4A 2018-02-11 2018-02-11 Tft基板及其制作方法与oled基板 Pending CN108364958A (zh)

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