CN103392230A - 半导体装置及半导体装置的制造方法 - Google Patents
半导体装置及半导体装置的制造方法 Download PDFInfo
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Abstract
一个实施方式所涉及的半导体装置(10)包括:半导体芯片(14);焊盘(12),具有搭载有半导体芯片的芯片搭载面(12a);第一引线(18、20),电连接于半导体芯片;热固化性树脂部(22),将第一引线的端部(18A、20A)固定于焊盘;和热可塑性树脂部(24),密封半导体芯片、焊盘及热固化性树脂部。
Description
技术领域
本发明涉及半导体装置及半导体装置的制造方法。
背景技术
作为半导体装置的一个例子公知树脂密封型的半导体装置。树脂密封型的半导体装置在引线框架的焊盘(die pad)上搭载有半导体芯片,半导体芯片及焊盘通过树脂铸模。引线框架具有引线接合于半导体芯片的引线,这样的引线的与半导体芯片接触侧的端部通过树脂与半导体芯片铸模在一起。如专利文献1、2所示的那样,上述铸模所使用的树脂为聚亚苯基硫醚树脂(PPS树脂)这样的热可塑性树脂。
【现有技术文献】
【专利文献】
【专利文献1】日本特开平5-226396号公报
发明内容
发明要解决的课题
在现有技术中,以引线接合法电连接于半导体芯片的引线通过热可塑性树脂固定于焊盘。因此,将半导体装置固定于电路基板这样的其他部件时,如果通过电烙铁等对引线施加局部的加热,则存在热可塑性树脂软化并且引线从由热可塑性树脂构成的密封部脱落的情况。
本发明的目的在于提供一种半导体装置及其制造方法,即使对引线加热,引线也更加难以脱落。
用于解决课题的手段
本发明的一个方面所涉及的半导体装置包括:半导体芯片;焊盘,具有搭载半导体芯片的芯片搭载面;第一引线,具有电连接于半导体芯片的端部;热固化性树脂部,将第一引线的端部固定于焊盘;和热可塑性树脂部,密封半导体芯片、焊盘及热固化性树脂部。
根据这样的方式,第一引线通过热固化性树脂部固定于焊盘,因此即使对第一引线加热,第一引线也难以从热可塑性树脂部脱落。
在一个实施方式中,也可以是热固化性树脂部覆盖焊盘的芯片搭载面及侧面中的至少一方的第一引线侧的区域的一部分。此时,热固化性树脂部可以更切实地固定于焊盘。
在一个实施方式中,也可以是热可塑性树脂部覆盖热固化性树脂部。此时,热可塑性树脂部和热固化性树脂部的粘合性提高,热固化性树脂部难以从热可塑性树脂部脱落。
在一个实施方式中,也可以是在焊盘中的热固化性树脂部所覆盖的区域的一部分形成有凹部及凸部中的至少一方。通过这样的凹部及凸部中的至少一种,热固化性树脂部可以更牢固地固定于焊盘。
在一个实施方式中,也可以是半导体装置具有一体地连接于焊盘的第二引线。
在一个实施方式中,也可以是焊盘的与芯片搭载面相对一侧的面不被热固化性树脂部及热可塑性树脂部覆盖。此时,与芯片搭载面相对的焊盘的面可以作为散热面发挥功能。
本发明的其他方面涉及半导体装置的制造方法。半导体装置的制造方法包括:将半导体芯片搭载在焊盘的芯片搭载面上的工序;将半导体芯片和第一引线的端部电连接的工序;将第一引线的端部通过热固化性树脂固定于焊盘的工序;和将热固化性树脂、半导体芯片及焊盘通过热可塑性树脂密封的工序。
根据所述方法,第一引线通过热固化性树脂固定于焊盘。因此,即使对第一引线加热,第一引线也更难以从通过热可塑性树脂密封的部分脱落。
发明效果
根据本发明,可以提供即使对引线加热也更难以脱落的半导体装置及其制造方法。
附图说明
图1是本发明的一个实施方式所涉及的半导体装置的立体图。
图2是图1沿II-II线的剖视图。
图3是表示图1所示的半导体装置的制造方法的一个工序的附图。
图4是表示图1所示的半导体装置的制造方法的一个工序的附图。
图5是表示图1所示的半导体装置的制造方法的一个工序的附图。
图6是图1的半导体装置所具有的焊盘的其他例子的立体图。
图7是本发明的其他实施方式所涉及的半导体装置的立体图。
图8是表示在图4所示半导体装置中,热可塑性树脂部的形成前的状态的附图。
具体实施方式
以下,参照附图说明本发明的实施方式。在附图的说明中同一元件标注同一标号,省略重复说明。附图的尺寸比例不一定与说明的情况相一致。
利用图1及图2,对一个实施方式所涉及的半导体装置进行说明。图1是一个实施方式所涉及的半导体装置的立体图。图2是图1沿II-II线的剖视图。为了说明,在图1中,以切除半导体装置的一部分的方式表示。
半导体装置10为树脂密封型的半导体装置。如图1及图2所示,半导体装置10具有焊盘12、半导体芯片14、三根引线16、18、20、热固化性树脂部22和热可塑性树脂部24。树脂密封型的半导体装置10的封装方式的例子一般为TO系列。TO系列的例子包括TO-247、TO-220、TO-263(D2-PAK)、TO-252(D-PAK)。
焊盘12呈板状。如图1及图2所示,焊盘12的俯视形状的一个例子为长方形。构成焊盘12的材料的例子包括铜。焊盘12在板厚度方向上形成有贯通焊盘12的贯通孔26。当半导体装置10例如通过螺钉紧固等固定于其他部件等时,贯通孔26为用于使螺钉贯通的孔。焊盘12具有搭载半导体芯片14的芯片搭载面12a。
半导体芯片14搭载在芯片搭载面12a的预定位置上。半导体芯片14的例子包括MOS-FET、二极管。半导体芯片14利用含铅的金属焊料、不含铅的金属焊料或者导电性树脂粘合于芯片搭载面12a,从而可以安装在芯片搭载面12a上。
三根引线16、18、20与焊盘12共同构成引线框架。三根引线16、18、20中的中央的引线(第二引线)16机械性地(换言之,物理性地)并且一体地连接于焊盘12的端部。由于焊盘12具有导电性,因此引线16和焊盘12电连接。而且,半导体芯片14通过例示的金属焊料等粘合在具有导电性的焊盘12的芯片搭载面12a上,因此引线16和半导体芯片14电连接。引线16的材料的例子包括与焊盘12的材料相同的材料。引线16所连接的焊盘12以引线16直接机械性地连接于焊盘12的方式制作即可,例如,可以通过利用冲压加工等将金属板这样的具有导电性的板材一体成形而制成。
通过作为连接用线的线束28A、28B,引线16的两侧的引线(第一引线)18、20分别电连接于半导体芯片14。线束28A、28B的例子包括氧化铝线、氧化铝带、金线、金带和铜线。引线18、20的材料的例子包括铜(Cu)及Cu合金。半导体芯片14为MOS-FET时,引线16对应于漏极端子,引线18、20中的一个对应于源极端子,引线18、20中的另一个对应于栅极端子。引线18、20通过热固化性树脂部22固定于焊盘12。
热固化性树脂部22将线束28A、28B的一端所连接的引线18、20的端部18a、20a(参照图2)包含在内侧。热固化性树脂部22可以由例如压铸模等形成。构成热固化性树脂部22的热固化性树脂的例子包括环氧树脂。热固化性树脂部22的外形形状的一个例子为如图1所示的大致长方体。图2所示的热固化性树脂部22的短边方向的长度t1的例子为2.5mm~3.0mm,长边方向的长度t2(参照图2)的例子为17.5mm~18.0mm。
在一个实施方式中,热固化性树脂部22可以覆盖焊盘12的端部。换言之,焊盘12的引线16、18、20侧之中,在从侧面12b向侧面12c侧的方向上,距侧面12b预定距离t3的部分深入到热固化性树脂部22中。此时,热固化性树脂部22覆盖焊盘12的侧面12d、12e及芯片搭载面12a的侧面12b侧的一部分的区域以及侧面12b。上述预定距离t3的例子为0.5mm~1.5mm,更具体的例子为0.5mm。
热可塑性树脂部24密封半导体芯片14、焊盘12及热固化性树脂部22。引线16、18、20中的热可塑性树脂部24的内侧的部分为所谓的内部引线部,引线16、18、20中的热可塑性树脂部24的外侧的部分为外部引线部。如图1所示,热可塑性树脂部24的外形形状的一个例子为大致长方体。此时,热可塑性树脂部24的外形尺寸的例子为20.0mm(图1的ta的长度)×24.0mm(图1的tb的长度)×4.80mm(图1的tc的长度)。构成热可塑性树脂部24的热固化性树脂的例子为聚亚苯基硫醚树脂(PPS树脂),包括液晶聚合物。热可塑性树脂部24可以通过将半导体芯片14、焊盘12及热固化性树脂部22以热可塑性树脂铸模而形成。热可塑性树脂部24形成有将焊盘12的贯通孔26的中心轴线作为中心轴线的贯通孔28。在螺钉紧固等时,贯通孔28与贯通孔26同样为使螺钉贯通的孔。贯通孔28的直径比贯通孔26的直径小。
在一个实施方式中,热可塑性树脂部24的外形尺寸在焊盘12的板厚度方向及宽度方向上比热固化性树脂部22的外形尺寸大。此时,热可塑性树脂部24覆盖热固化性树脂部22。在该结构中,热固化性树脂部22的面22a及面22b等与热可塑性树脂更切实地接触,因此热可塑性树脂部24和热固化性树脂部22的粘合性进一步提高。在芯片搭载面12a的法线方向(板厚度方向)上,热可塑性树脂部24的表面24a和热固化性树脂部22的面22a之间的距离t4的例子为0.5mm~1.5mm,更具体的例子为0.5mm。同样的,在侧面12d的法线方向(宽度方向)上,热可塑性树脂部24的侧面24b和热固化性树脂部22的面22b之间的距离t5的例子为0.5mm~1.5mm,更具体的例子为0.5mm。此处,对于侧面12d侧进行了说明,但是在侧面12e的法线方向上也是同样的。
在一个实施方式中,可以将焊盘12的与芯片搭载面12a相对一侧的面即底面12f开放。换言之,底面12f可以是不被热固化性树脂部22及热可塑性树脂覆盖的面。此时,底面12f可以作为散热面发挥功能。
利用图3~图5说明半导体装置10的制造方法的一个例子。图3~图5为用于说明图1所示的半导体装置10的制造方法的一个例子的附图。
首先,如图3所示,在焊盘12的芯片搭载面12a上搭载半导体芯片14,引线16一体地连接于焊盘12的一个端部。半导体芯片14利用例如含铅的金属焊料等粘合在芯片搭载面12a上,从而可以搭载在芯片搭载面12a上。
在接下来的工序中,如图4所示,将引线18、20配置在引线16的两侧,将引线18、20的端部18a、20a和半导体芯片14通过线束28A、28B连接。即,将引线18、20的端部18a、20a与半导体芯片14进行所谓引线接合。如图4所示,在其后的工序中,将引线18、20的端部18a、20a通过环氧基树脂这样的热固化性树脂固定于焊盘12。由此,形成热固化性树脂部22。热固化性树脂部22是将引线18、20的端部18a、20a和焊盘12的一个端部通过热固化性树脂以例如压铸模的方式形成的。如利用图1及图2说明的那样,热固化性树脂部22能够以覆盖焊盘12的端部的方式形成。
在之后的工序中,将半导体芯片14、焊盘12及热固化性树脂部22通过PPS树脂或者液晶聚合物这样的热可塑性树脂进行密封。由此,完成具有图5所示的热可塑性树脂部24的半导体装置10。热可塑性树脂所实现的密封能够以将图4所示的成型体通过例如射出成型机铸模的方式实现。此时,如利用图1和图2说明的那样,热可塑性树脂部24能够以在热可塑性树脂部24的外表面和热固化性树脂部22的外表面之间具有预定的宽度的方式形成。
在上述例示的制造方法中,能够使焊盘12的底面12f不被热固化性树脂及热可塑性树脂覆盖。
在以上说明的通过热可塑性树脂部24封装的半导体装置10中,引线18、20不是通过热可塑性树脂而是通过热固化性树脂部22固定于焊盘12。因此,在将半导体装置10连接于电路基板等这样的其他部件的情况等之下,即使引线18、20通过电烙铁等而局部发热,引线18、20也难以从作为密封部的热可塑性树脂部24脱落。换言之,引线18、20可以稳定地固定于焊盘12。
并且,如果半导体芯片14为MOS-FET、特别是使用SiC或者GaN的功率MOS-FET等,则有时驱动MOS-FET等会产生更高的热量。即使在这样的情况下,在半导体装置10中,通过热固化性树脂部22将引线18、20固定于焊盘12,因此引线18、20难以从热可塑性树脂部24脱落。其结果是,引线18、20可以稳定地固定于焊盘12。因此,在具有MOS-FET、特别是使用SIC或者GaN的功率MOS-FET等这样的发热量大的半导体芯片14的装置中,半导体装置10的结构为有效的结构。
在一个实施方式中,热固化性树脂部22覆盖焊盘12的端部,因此热固化性树脂部22更牢固地接合于焊盘12。因此,引线18、20更难以从树脂密封区域脱落。
进而,在一个实施方式中,热固化性树脂部22的外形尺寸比热可塑性树脂部24的外形尺寸小,因此热固化性树脂部22的外表面和热可塑性树脂部24的外表面之间填充有热可塑性树脂。此时,热固化性树脂部22和热可塑性树脂部24更粘合,因此热固化性树脂部22更难以从热可塑性树脂部24脱落。
在到此为止的的说明中,焊盘12的表面几乎为平坦的。但是,在一个实施方式中,也可以是在焊盘的端面侧的端部中的由热固化性树脂部覆盖的区域形成凹部或者凸部。
图6是焊盘的其他实施方式的立体图。在图6中,为了说明,将热固化性树脂部22的外形以双点划线表示。并且,在图6中,引线16也一起表示。在图6所示的焊盘30中,在侧面12d、12e上分别形成有凹部32A、32B,并且在芯片搭载面12a上形成有从侧面12d侧向侧面12e侧延伸的凹部32C。凹部32A、32B、32C的形状的例子包括楔形。
由于形成有这样的凹部32A、32B、32C,因此热固化性树脂部22容易咬合于焊盘30的侧面12b侧的端部,热固化性树脂部22可以更稳定地固定于焊盘30的端部。其结果是,热固化性树脂部22和焊盘30的接合更牢固。
进而,也可以不形成图6所示的凹部32A、32B、32C而形成凸部。凸部的例子包括截面形状为三角形的凸部。或者,也可以不形成凹部32A、32B、32C而形成由凹部及凸部构成的凹凸形状。凹凸形状的例子包括锯齿状。更进一步地,在图6中,例示了在侧面12d、12e及芯片搭载面12a上分别形成有凹部32A、32B、32C的方式。但是,在焊盘30的端部中由热固化性树脂部22覆盖的区域的一部分上形成凹部即可。例如,也可以只在侧面12d、12e及芯片搭载面12a其中之一上形成。此时,不形成凹部而形成上述那样的凸部时、以及形成由凹部和凸部构成的凹凸形状时也是同样的。
在半导体装置10的结构中,热固化性树脂部22覆盖焊盘12的从侧面12d到侧面12e的端部整体。但是,如图7及图8所示,也可以对应各引线18、20的端部18a、20a分别设置热固化性树脂部22。图7是本发明所述的半导体装置的其他实施方式的立体图。图8是表示在图7所示的半导体装置中,由热可塑性树脂实现的铸模成形前的状态的附图。
如图7及图8所示,半导体装置34没有通过热固化性树脂部22覆盖焊盘12和引线16的连接部分这一点,区别于半导体装置10的结构。但是,在其他结构中,半导体装置34的结构与半导体装置10的结构相同。半导体装置34能够以通过热可塑性树脂将图8所示的半导体芯片14、焊盘12及热固化性树脂部22、22铸模的方式制造。
在半导体装置34中也利用热固化性树脂将引线18、20的端部18a、20a固定于焊盘12,因此具有与半导体装置10同样的作用效果。并且,如利用图6说明的那样,在半导体装置34中,也可以不采用焊盘12而采用形成有凹部、凸部、或者由凹部及凸部构成的凹凸形状的焊盘30。
以上,对本发明的各种实施方式进行了说明,但是本发明并不限定于上述例示的各种实施方式,可在不脱离本发明的主旨的范围内进行各种变形。
例如,说明了在焊盘12、30设置有作为第一引线的引线18、20及作为第二引线的引线16。但是,根据半导体芯片14的结构,也可以是不具有第二引线的结构。进而,第一引线不限于两根,也可以是一根,也可以是三根以上。并且,本发明也可以适用于模拟IC、数字IC、CPU、存储器等这样的半导体装置。
标号说明
10、34…半导体装置,12、30…焊盘,12a…芯片搭载面,12f…底面(与芯片搭载面相反一侧的面),14…半导体芯片,16…引线(第二引线),18、20…引线(第一引线),18a、20a…端部(第一引线的端部),22…热固化性树脂部,22a、22b…热固化性树脂部的面,24…热可塑性树脂部,24a、24b…热可塑性树脂部的面,32A、32B、32C…凹部。
Claims (7)
1.一种半导体装置,包括:
半导体芯片;
焊盘,具有搭载上述半导体芯片的芯片搭载面;
第一引线,具有电连接于上述半导体芯片的端部;
热固化性树脂部,将上述第一引线的上述端部固定于上述焊盘;和
热可塑性树脂部,密封上述半导体芯片、上述焊盘及上述热固化性树脂部。
2.根据权利要求1所述的半导体装置,其中,上述热固化性树脂部覆盖上述焊盘的上述芯片搭载面及侧面中的至少一方的上述第一引线侧的区域的一部分。
3.根据权利要求1或2所述的半导体装置,其中,上述热可塑性树脂部覆盖上述热固化性树脂部。
4.根据权利要求2或3所述的半导体装置,其中,在上述焊盘中的上述热固化性树脂部所覆盖的区域的一部分形成有凹部及凸部中的至少一方。
5.根据权利要求1~4中的任一项所述的半导体装置,其中,具有一体地连接于上述焊盘的第二引线。
6.根据权利要求1~5中的任一项所述的半导体装置,其中,上述焊盘的与上述芯片搭载面相对一侧的面不被上述热固化性树脂部及上述热可塑性树脂部覆盖。
7.一种半导体装置的制造方法,包括:
将半导体芯片搭载在焊盘的芯片搭载面上的工序;
将上述半导体芯片和第一引线的端部电连接的工序;
将上述第一引线的端部通过热固化性树脂固定于上述焊盘的工序;和
将上述热固化性树脂、上述半导体芯片及上述焊盘通过热可塑性树脂密封的工序。
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KR102499825B1 (ko) * | 2021-02-05 | 2023-02-14 | 파워마스터반도체 주식회사 | 패키지형 전력 반도체 장치 |
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EP0206771A2 (en) * | 1985-06-20 | 1986-12-30 | Kabushiki Kaisha Toshiba | Packaged semiconductor device |
US20020084518A1 (en) * | 2000-12-28 | 2002-07-04 | Hajime Hasebe | Semiconductor device |
CN101494214A (zh) * | 2002-10-08 | 2009-07-29 | 株式会社瑞萨科技 | 存储卡 |
US20040084758A1 (en) * | 2002-11-04 | 2004-05-06 | Siliconware Precision Industries, Ltd. | Semiconductor package with lead frame as chip carrier and method for fabricating the same |
CN101604679A (zh) * | 2008-06-11 | 2009-12-16 | 恩益禧电子股份有限公司 | 引线框、半导体器件以及引线框和半导体器件的制造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN108604583A (zh) * | 2016-02-08 | 2018-09-28 | 三菱电机株式会社 | 半导体装置 |
Also Published As
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EP2688098B1 (en) | 2016-05-25 |
EP2688098A4 (en) | 2014-07-30 |
EP2688098A1 (en) | 2014-01-22 |
US20120235288A1 (en) | 2012-09-20 |
JP2012195497A (ja) | 2012-10-11 |
WO2012124239A1 (ja) | 2012-09-20 |
TW201241977A (en) | 2012-10-16 |
US8659129B2 (en) | 2014-02-25 |
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