CN103151260A - 利用强制对流对薄膜装置进行均匀热处理的设备及方法 - Google Patents
利用强制对流对薄膜装置进行均匀热处理的设备及方法 Download PDFInfo
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- CN103151260A CN103151260A CN2012100133023A CN201210013302A CN103151260A CN 103151260 A CN103151260 A CN 103151260A CN 2012100133023 A CN2012100133023 A CN 2012100133023A CN 201210013302 A CN201210013302 A CN 201210013302A CN 103151260 A CN103151260 A CN 103151260A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201161432775P | 2011-01-14 | 2011-01-14 | |
US61/432,775 | 2011-01-14 | ||
US13/343,531 US8998606B2 (en) | 2011-01-14 | 2012-01-04 | Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices |
US13/343,531 | 2012-01-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN103151260A true CN103151260A (zh) | 2013-06-12 |
Family
ID=46510367
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2012100133023A Pending CN103151260A (zh) | 2011-01-14 | 2012-01-16 | 利用强制对流对薄膜装置进行均匀热处理的设备及方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8998606B2 (zh) |
CN (1) | CN103151260A (zh) |
DE (1) | DE102012000734A1 (zh) |
TW (1) | TWI549189B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105386126A (zh) * | 2014-09-03 | 2016-03-09 | 东京毅力科创株式会社 | 磁性退火装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8398772B1 (en) * | 2009-08-18 | 2013-03-19 | Stion Corporation | Method and structure for processing thin film PV cells with improved temperature uniformity |
US20130192522A1 (en) * | 2010-12-30 | 2013-08-01 | Poole Ventura, Inc. | Thermal diffusion chamber with convection compressor |
US20130153202A1 (en) * | 2010-12-30 | 2013-06-20 | Poole Ventura, Inc. | Thermal diffusion chamber with convection compressor |
US20160293454A1 (en) * | 2013-03-27 | 2016-10-06 | Tokyo Electron Limited | Substrate processing device |
KR101442222B1 (ko) | 2013-04-05 | 2014-09-24 | 주식회사 아바코 | 열처리 시스템과 열처리 방법 및 그를 이용한 cigs 태양전지의 제조방법 |
US9741575B2 (en) * | 2014-03-10 | 2017-08-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | CVD apparatus with gas delivery ring |
TWI581335B (zh) * | 2015-07-24 | 2017-05-01 | 茂迪股份有限公司 | 熱處理裝置 |
TWI754065B (zh) * | 2017-06-23 | 2022-02-01 | 日商三井化學東賽璐股份有限公司 | 零件製造裝置及零件製造方法 |
Citations (6)
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JP2006196771A (ja) * | 2005-01-14 | 2006-07-27 | Honda Motor Co Ltd | カルコパイライト型薄膜太陽電池及びその製造方法 |
CN101095240A (zh) * | 2004-12-28 | 2007-12-26 | 昭和砚壳石油株式会社 | 用于形成cis型薄膜太阳能电池的光吸收层的方法 |
WO2009128253A1 (ja) * | 2008-04-17 | 2009-10-22 | 本田技研工業株式会社 | 太陽電池の熱処理装置 |
WO2009153059A1 (de) * | 2008-06-20 | 2009-12-23 | Volker Probst | Prozessvorrichtung zum prozessieren von insbesondere gestapelten prozessgütern |
JP2010016285A (ja) * | 2008-07-07 | 2010-01-21 | Ihi Corp | 熱処理装置 |
WO2010091473A1 (en) * | 2009-02-12 | 2010-08-19 | Griffith University | A chemical vapour deposition system and process |
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US8998606B2 (en) | 2015-04-07 |
TWI549189B (zh) | 2016-09-11 |
US20120237885A1 (en) | 2012-09-20 |
TW201250851A (en) | 2012-12-16 |
DE102012000734A1 (de) | 2012-07-19 |
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