FR2932009B1 - Cellule photovoltaique et substrat de cellule photovoltaique - Google Patents

Cellule photovoltaique et substrat de cellule photovoltaique

Info

Publication number
FR2932009B1
FR2932009B1 FR0853601A FR0853601A FR2932009B1 FR 2932009 B1 FR2932009 B1 FR 2932009B1 FR 0853601 A FR0853601 A FR 0853601A FR 0853601 A FR0853601 A FR 0853601A FR 2932009 B1 FR2932009 B1 FR 2932009B1
Authority
FR
France
Prior art keywords
photovoltaic cell
notably
substrate
transparent
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0853601A
Other languages
English (en)
Other versions
FR2932009A1 (fr
Inventor
Emmanuelle Peter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Original Assignee
Saint Gobain Glass France SAS
Compagnie de Saint Gobain SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Saint Gobain Glass France SAS, Compagnie de Saint Gobain SA filed Critical Saint Gobain Glass France SAS
Priority to FR0853601A priority Critical patent/FR2932009B1/fr
Priority to US12/171,691 priority patent/US20090293945A1/en
Priority to EP09769481A priority patent/EP2286458A2/fr
Priority to JP2011512178A priority patent/JP2011522433A/ja
Priority to CN2009801201700A priority patent/CN102047435A/zh
Priority to PCT/FR2009/050984 priority patent/WO2009156640A2/fr
Priority to KR1020107026991A priority patent/KR20110014168A/ko
Publication of FR2932009A1 publication Critical patent/FR2932009A1/fr
Application granted granted Critical
Publication of FR2932009B1 publication Critical patent/FR2932009B1/fr
Priority to US12/958,569 priority patent/US20110139237A1/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Laminated Bodies (AREA)
FR0853601A 2008-06-02 2008-06-02 Cellule photovoltaique et substrat de cellule photovoltaique Expired - Fee Related FR2932009B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR0853601A FR2932009B1 (fr) 2008-06-02 2008-06-02 Cellule photovoltaique et substrat de cellule photovoltaique
US12/171,691 US20090293945A1 (en) 2008-06-02 2008-07-11 Photovoltaic cell and photovoltaic cell substrate
JP2011512178A JP2011522433A (ja) 2008-06-02 2009-05-27 光起電力セルおよび光起電力セル基板
CN2009801201700A CN102047435A (zh) 2008-06-02 2009-05-27 光电池和光电池的基材
EP09769481A EP2286458A2 (fr) 2008-06-02 2009-05-27 Cellule photovoltaïque et substrat de cellule photovoltaïque
PCT/FR2009/050984 WO2009156640A2 (fr) 2008-06-02 2009-05-27 Cellule photovoltaïque et substrat de cellule photovoltaïque
KR1020107026991A KR20110014168A (ko) 2008-06-02 2009-05-27 광전지 및 이를 위한 기재
US12/958,569 US20110139237A1 (en) 2008-06-02 2010-12-02 Photovoltaic cell, and substrate for same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0853601A FR2932009B1 (fr) 2008-06-02 2008-06-02 Cellule photovoltaique et substrat de cellule photovoltaique

Publications (2)

Publication Number Publication Date
FR2932009A1 FR2932009A1 (fr) 2009-12-04
FR2932009B1 true FR2932009B1 (fr) 2010-09-17

Family

ID=40328499

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0853601A Expired - Fee Related FR2932009B1 (fr) 2008-06-02 2008-06-02 Cellule photovoltaique et substrat de cellule photovoltaique

Country Status (7)

Country Link
US (2) US20090293945A1 (fr)
EP (1) EP2286458A2 (fr)
JP (1) JP2011522433A (fr)
KR (1) KR20110014168A (fr)
CN (1) CN102047435A (fr)
FR (1) FR2932009B1 (fr)
WO (1) WO2009156640A2 (fr)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8017860B2 (en) 2006-05-15 2011-09-13 Stion Corporation Method and structure for thin film photovoltaic materials using bulk semiconductor materials
US8071179B2 (en) 2007-06-29 2011-12-06 Stion Corporation Methods for infusing one or more materials into nano-voids if nanoporous or nanostructured materials
US8287942B1 (en) 2007-09-28 2012-10-16 Stion Corporation Method for manufacture of semiconductor bearing thin film material
US8759671B2 (en) 2007-09-28 2014-06-24 Stion Corporation Thin film metal oxide bearing semiconductor material for single junction solar cell devices
US7998762B1 (en) 2007-11-14 2011-08-16 Stion Corporation Method and system for large scale manufacture of thin film photovoltaic devices using multi-chamber configuration
US8642138B2 (en) 2008-06-11 2014-02-04 Stion Corporation Processing method for cleaning sulfur entities of contact regions
US8003432B2 (en) 2008-06-25 2011-08-23 Stion Corporation Consumable adhesive layer for thin film photovoltaic material
US9087943B2 (en) 2008-06-25 2015-07-21 Stion Corporation High efficiency photovoltaic cell and manufacturing method free of metal disulfide barrier material
US7855089B2 (en) 2008-09-10 2010-12-21 Stion Corporation Application specific solar cell and method for manufacture using thin film photovoltaic materials
US8394662B1 (en) 2008-09-29 2013-03-12 Stion Corporation Chloride species surface treatment of thin film photovoltaic cell and manufacturing method
US8008112B1 (en) 2008-09-29 2011-08-30 Stion Corporation Bulk chloride species treatment of thin film photovoltaic cell and manufacturing method
US8008110B1 (en) * 2008-09-29 2011-08-30 Stion Corporation Bulk sodium species treatment of thin film photovoltaic cell and manufacturing method
US8501521B1 (en) 2008-09-29 2013-08-06 Stion Corporation Copper species surface treatment of thin film photovoltaic cell and manufacturing method
US8476104B1 (en) 2008-09-29 2013-07-02 Stion Corporation Sodium species surface treatment of thin film photovoltaic cell and manufacturing method
US8236597B1 (en) 2008-09-29 2012-08-07 Stion Corporation Bulk metal species treatment of thin film photovoltaic cell and manufacturing method
US8026122B1 (en) 2008-09-29 2011-09-27 Stion Corporation Metal species surface treatment of thin film photovoltaic cell and manufacturing method
US8008111B1 (en) * 2008-09-29 2011-08-30 Stion Corporation Bulk copper species treatment of thin film photovoltaic cell and manufacturing method
US8383450B2 (en) 2008-09-30 2013-02-26 Stion Corporation Large scale chemical bath system and method for cadmium sulfide processing of thin film photovoltaic materials
US8425739B1 (en) 2008-09-30 2013-04-23 Stion Corporation In chamber sodium doping process and system for large scale cigs based thin film photovoltaic materials
US7863074B2 (en) 2008-09-30 2011-01-04 Stion Corporation Patterning electrode materials free from berm structures for thin film photovoltaic cells
US7947524B2 (en) 2008-09-30 2011-05-24 Stion Corporation Humidity control and method for thin film photovoltaic materials
US7910399B1 (en) * 2008-09-30 2011-03-22 Stion Corporation Thermal management and method for large scale processing of CIS and/or CIGS based thin films overlying glass substrates
US8741689B2 (en) 2008-10-01 2014-06-03 Stion Corporation Thermal pre-treatment process for soda lime glass substrate for thin film photovoltaic materials
US20110018103A1 (en) * 2008-10-02 2011-01-27 Stion Corporation System and method for transferring substrates in large scale processing of cigs and/or cis devices
US8003430B1 (en) 2008-10-06 2011-08-23 Stion Corporation Sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8435826B1 (en) 2008-10-06 2013-05-07 Stion Corporation Bulk sulfide species treatment of thin film photovoltaic cell and manufacturing method
US8168463B2 (en) 2008-10-17 2012-05-01 Stion Corporation Zinc oxide film method and structure for CIGS cell
US8344243B2 (en) 2008-11-20 2013-01-01 Stion Corporation Method and structure for thin film photovoltaic cell using similar material junction
US8241943B1 (en) 2009-05-08 2012-08-14 Stion Corporation Sodium doping method and system for shaped CIGS/CIS based thin film solar cells
US8372684B1 (en) 2009-05-14 2013-02-12 Stion Corporation Method and system for selenization in fabricating CIGS/CIS solar cells
TW201101514A (en) * 2009-05-18 2011-01-01 First Solar Inc Silicon nitride diffusion barrier layer for cadmium stannate TCO
TW201101513A (en) * 2009-05-18 2011-01-01 First Solar Inc Cadmium stannate TCO structure with diffusion barrier layer and separation layer
US8507786B1 (en) 2009-06-27 2013-08-13 Stion Corporation Manufacturing method for patterning CIGS/CIS solar cells
US8398772B1 (en) 2009-08-18 2013-03-19 Stion Corporation Method and structure for processing thin film PV cells with improved temperature uniformity
US8809096B1 (en) 2009-10-22 2014-08-19 Stion Corporation Bell jar extraction tool method and apparatus for thin film photovoltaic materials
US8502066B2 (en) * 2009-11-05 2013-08-06 Guardian Industries Corp. High haze transparent contact including insertion layer for solar cells, and/or method of making the same
US20110100446A1 (en) * 2009-11-05 2011-05-05 Guardian Industries Corp. High haze transparent contact including ion-beam treated layer for solar cells, and/or method of making the same
FR2947954A1 (fr) * 2009-12-11 2011-01-14 Commissariat Energie Atomique Cellule texturee a rendement de conversion eleve comportant une zone texturee recouverte par une bi-couche antireflet
WO2011087895A2 (fr) * 2010-01-14 2011-07-21 Pilkington Group Limited Panneau photovoltaïque et procédé de réalisation associé
US8859880B2 (en) * 2010-01-22 2014-10-14 Stion Corporation Method and structure for tiling industrial thin-film solar devices
US8263494B2 (en) 2010-01-25 2012-09-11 Stion Corporation Method for improved patterning accuracy for thin film photovoltaic panels
CN103384919A (zh) * 2010-03-18 2013-11-06 第一太阳能有限公司 具有结晶层的光伏器件
US8142521B2 (en) * 2010-03-29 2012-03-27 Stion Corporation Large scale MOCVD system for thin film photovoltaic devices
US9096930B2 (en) 2010-03-29 2015-08-04 Stion Corporation Apparatus for manufacturing thin film photovoltaic devices
US20120060923A1 (en) * 2010-03-31 2012-03-15 Zhibo Zhao Photovoltaic device barrier layer
JP2011222687A (ja) * 2010-04-08 2011-11-04 Tosoh Corp 太陽電池
CN102893408B (zh) * 2010-05-13 2016-05-11 第一太阳能有限公司 光伏器件导电层
FR2961954B1 (fr) * 2010-06-25 2012-07-13 Saint Gobain Cellule comprenant un materiau photovoltaique a base de cadmium
FR2961953B1 (fr) * 2010-06-25 2012-07-13 Saint Gobain Cellule comprenant un matériau photovoltaïque a base de cadmium
US8461061B2 (en) 2010-07-23 2013-06-11 Stion Corporation Quartz boat method and apparatus for thin film thermal treatment
WO2012040440A2 (fr) * 2010-09-22 2012-03-29 First Solar, Inc. Couche tampon en cdzno ou snzno pour cellule solaire
US8628997B2 (en) 2010-10-01 2014-01-14 Stion Corporation Method and device for cadmium-free solar cells
US8728200B1 (en) 2011-01-14 2014-05-20 Stion Corporation Method and system for recycling processing gas for selenization of thin film photovoltaic materials
US8998606B2 (en) 2011-01-14 2015-04-07 Stion Corporation Apparatus and method utilizing forced convection for uniform thermal treatment of thin film devices
US20140305492A1 (en) * 2011-08-10 2014-10-16 Saint-Gobain Glass France Solar module with reduced power loss and process for the production thereof
US8436445B2 (en) 2011-08-15 2013-05-07 Stion Corporation Method of manufacture of sodium doped CIGS/CIGSS absorber layers for high efficiency photovoltaic devices
KR20140117484A (ko) * 2012-01-27 2014-10-07 가부시키가이샤 가네카 투명 전극 부착 기판 및 그 제조 방법
KR101880153B1 (ko) 2012-04-05 2018-07-20 삼성전자주식회사 혼성 금속 산화물 및 그 형성 방법과 상기 혼성 금속 산화물을 포함하는 태양 전지
CN104617178B (zh) * 2015-02-03 2017-04-19 浙江大学 一种紫外探测器及其制备方法
US10672921B2 (en) * 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with transparent conductive layer and method of making the same
JP2021012949A (ja) * 2019-07-05 2021-02-04 Ａｇｃ株式会社 透明電極基板及び太陽電池
JP2021012948A (ja) * 2019-07-05 2021-02-04 Ａｇｃ株式会社 透明電極基板及び太陽電池
WO2022114026A1 (fr) * 2020-11-30 2022-06-02 Ａｇｃ株式会社 Substrat d'électrode transparent, et batterie solaire

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2974485B2 (ja) * 1992-02-05 1999-11-10 キヤノン株式会社 光起電力素子の製造法
JP2756050B2 (ja) * 1992-03-03 1998-05-25 キヤノン株式会社 光起電力装置
JP2001060702A (ja) * 1999-06-18 2001-03-06 Nippon Sheet Glass Co Ltd 光電変換装置用基板およびこれを用いた光電変換装置
DE60123714T2 (de) * 2000-08-15 2007-10-04 FUJI PHOTO FILM CO., LTD., Minamiashigara Photoelektrische Zelle und Herstellungsmethode
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
AU2002259152A1 (en) * 2001-05-08 2002-11-18 Bp Corporation North America Inc. Improved photovoltaic device
WO2003048411A1 (fr) * 2001-12-03 2003-06-12 Nippon Sheet Glass Company, Limited Procede pour former un film mince, substrat comprenant un film electro-conducteur transparent et dispositif de conversion photoelectrique utilisant le substrat
WO2003103085A1 (fr) * 2002-06-04 2003-12-11 新日本石油株式会社 Transducteur photoelectrique
US20050257824A1 (en) * 2004-05-24 2005-11-24 Maltby Michael G Photovoltaic cell including capping layer
US20070193624A1 (en) * 2006-02-23 2007-08-23 Guardian Industries Corp. Indium zinc oxide based front contact for photovoltaic device and method of making same
US20080029152A1 (en) * 2006-08-04 2008-02-07 Erel Milshtein Laser scribing apparatus, systems, and methods
US20080047602A1 (en) * 2006-08-22 2008-02-28 Guardian Industries Corp. Front contact with high-function TCO for use in photovoltaic device and method of making same
US8124870B2 (en) * 2006-09-19 2012-02-28 Itn Energy System, Inc. Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device
JP2008091532A (ja) * 2006-09-29 2008-04-17 Sanyo Electric Co Ltd 太陽電池モジュール
US7964788B2 (en) * 2006-11-02 2011-06-21 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US20080115821A1 (en) * 2006-11-22 2008-05-22 Li Xu Multilayer transparent conductive oxide for improved chemical processing
US20080223430A1 (en) * 2007-03-14 2008-09-18 Guardian Industries Corp. Buffer layer for front electrode structure in photovoltaic device or the like

Also Published As

Publication number Publication date
JP2011522433A (ja) 2011-07-28
WO2009156640A2 (fr) 2009-12-30
US20090293945A1 (en) 2009-12-03
WO2009156640A3 (fr) 2011-01-06
KR20110014168A (ko) 2011-02-10
FR2932009A1 (fr) 2009-12-04
EP2286458A2 (fr) 2011-02-23
US20110139237A1 (en) 2011-06-16
CN102047435A (zh) 2011-05-04

Similar Documents

Publication Publication Date Title
FR2932009B1 (fr) Cellule photovoltaique et substrat de cellule photovoltaique
MX2010001044A (es) Sustrato de cara frontal de celula fotovoltaica y uso de un sustrato para una cara frontal de celula fotovoltaica.
DE602007007241D1 (de) Frontelektrode auf zinkoxidbasis mit yttrium für ein pv-element oder dergleichen
PL2227829T3 (pl) Udoskonalenia elementów zdolnych do zbierania światła
WO2013032790A3 (fr) Dispositif électrochromique à oxyde conducteur transparent nanostructuré
MX358614B (es) Cristal con revestimiento que refleja radiación térmica.
WO2009120330A3 (fr) Substrats pour photovoltaïques
WO2010003066A3 (fr) Electrode conductrice transparente
EP2341555A3 (fr) Électrode frontale incluant un revêtement conducteur transparent pyrolytique sur un substrat de verre à motifs pour une utilisation dans un dispositif photovoltaïque et procédé de fabrication correspondant
EP1968121A3 (fr) Procédé de fabrication d'une cellule solaire en silicone monocristallin et cellule solaire en silicone monocristallin
WO2008115326A3 (fr) Rétroréflecteur pour dispositif photovoltaïque
WO2009103929A3 (fr) Cellule photovoltaique et substrat de cellule photovoltaique
EP2669952A8 (fr) Dispositif photovoltaïque et son procédé de fabrication
EP2530722A3 (fr) Appariement de l'indice de réfraction de couches minces pour dispositifs photovoltaïques et leurs procédés de fabrication
MY184952A (en) Electrode, photovoltaic device, and method of making
WO2011133435A3 (fr) Interface silicium-tco améliorée à l'aide de nanofils en nickel dans les cellules solaires en film mince de silicium
WO2011121067A3 (fr) Dispositif photovoltaïque à film mince doté d'un système amélioré de piégeage de la lumière
EP2403000A3 (fr) Quadrillages métalliques en tant que contacts frontaux d'un dispositif photovoltaïque à film mince à base de tellurure de cadmium
WO2012040440A3 (fr) Couche tampon en cdzno ou snzno pour cellule solaire
WO2012031102A3 (fr) Cellule solaire de silicium à film mince agencée selon une configuration à multijonctions sur du verre texturé
IN2012DN01227A (fr)
WO2009044064A3 (fr) Substrat verrier pour cellules solaires
FR2956924B1 (fr) Cellule photovoltaique incorporant une nouvelle couche tco
EP2383792A3 (fr) Couches de sulfure de cadmium à utiliser dans les dispositifs photovoltaïques à couche mince en tellurure de cadmium et leurs procédés de fabrication
WO2010086135A3 (fr) Cellule solaire en couches minces

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20140228