CN103140439A - 低温生产石墨烯的方法,直接转移用相同方法的石墨烯的方法与石墨烯片材 - Google Patents
低温生产石墨烯的方法,直接转移用相同方法的石墨烯的方法与石墨烯片材 Download PDFInfo
- Publication number
- CN103140439A CN103140439A CN2011800444736A CN201180044473A CN103140439A CN 103140439 A CN103140439 A CN 103140439A CN 2011800444736 A CN2011800444736 A CN 2011800444736A CN 201180044473 A CN201180044473 A CN 201180044473A CN 103140439 A CN103140439 A CN 103140439A
- Authority
- CN
- China
- Prior art keywords
- graphene
- substrate
- icp
- catalyst layer
- metal catalyst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 403
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 360
- 238000000034 method Methods 0.000 title claims abstract description 108
- 238000012546 transfer Methods 0.000 title claims abstract description 29
- 238000004519 manufacturing process Methods 0.000 title claims description 71
- 239000000758 substrate Substances 0.000 claims abstract description 140
- 239000003054 catalyst Substances 0.000 claims abstract description 73
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 41
- 229920000642 polymer Polymers 0.000 claims description 32
- 239000010949 copper Substances 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 17
- 238000001816 cooling Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 16
- 239000013049 sediment Substances 0.000 claims description 15
- 229910052742 iron Inorganic materials 0.000 claims description 10
- -1 myristoyl phosphatidylinositols Chemical class 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910001369 Brass Inorganic materials 0.000 claims description 5
- 229910000906 Bronze Inorganic materials 0.000 claims description 5
- 229910052770 Uranium Inorganic materials 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 5
- 239000010951 brass Substances 0.000 claims description 5
- 239000010974 bronze Substances 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 238000009616 inductively coupled plasma Methods 0.000 claims description 5
- 229910052749 magnesium Inorganic materials 0.000 claims description 5
- 229910052748 manganese Inorganic materials 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 3
- 229910003771 Gold(I) chloride Inorganic materials 0.000 claims description 2
- 239000002033 PVDF binder Substances 0.000 claims description 2
- 229910018286 SbF 6 Inorganic materials 0.000 claims description 2
- RMLHVYNAGVXKKC-UHFFFAOYSA-N [SH2]=N.C(F)(F)F Chemical compound [SH2]=N.C(F)(F)F RMLHVYNAGVXKKC-UHFFFAOYSA-N 0.000 claims description 2
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 claims description 2
- WCZAXBXVDLKQGV-UHFFFAOYSA-N n,n-dimethyl-2-(7-oxobenzo[c]fluoren-5-yl)oxyethanamine oxide Chemical compound C12=CC=CC=C2C(OCC[N+](C)([O-])C)=CC2=C1C1=CC=CC=C1C2=O WCZAXBXVDLKQGV-UHFFFAOYSA-N 0.000 claims description 2
- 229940067626 phosphatidylinositols Drugs 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 230000035484 reaction time Effects 0.000 claims description 2
- 230000001105 regulatory effect Effects 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 150000003460 sulfonic acids Chemical class 0.000 claims description 2
- 230000012010 growth Effects 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 87
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 32
- 239000007789 gas Substances 0.000 description 27
- 239000004642 Polyimide Substances 0.000 description 24
- 229920001721 polyimide Polymers 0.000 description 24
- 238000001237 Raman spectrum Methods 0.000 description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 239000011701 zinc Substances 0.000 description 11
- 239000001257 hydrogen Substances 0.000 description 10
- 229910052739 hydrogen Inorganic materials 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 9
- 229910052725 zinc Inorganic materials 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 7
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 239000002356 single layer Substances 0.000 description 7
- 239000004793 Polystyrene Substances 0.000 description 6
- 238000001069 Raman spectroscopy Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 6
- 239000004205 dimethyl polysiloxane Substances 0.000 description 6
- 238000000407 epitaxy Methods 0.000 description 6
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 6
- 229920002223 polystyrene Polymers 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 239000005030 aluminium foil Substances 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 150000001721 carbon Chemical group 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- MQIUGAXCHLFZKX-UHFFFAOYSA-N Di-n-octyl phthalate Natural products CCCCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCCCC MQIUGAXCHLFZKX-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 239000004695 Polyether sulfone Substances 0.000 description 3
- 239000004697 Polyetherimide Substances 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 3
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000002950 deficient Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 3
- 229920000058 polyacrylate Polymers 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920006393 polyether sulfone Polymers 0.000 description 3
- 229920001601 polyetherimide Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IBXNCJKFFQIKKY-UHFFFAOYSA-N 1-pentyne Chemical compound CCCC#C IBXNCJKFFQIKKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical compound C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910021393 carbon nanotube Inorganic materials 0.000 description 2
- 239000002041 carbon nanotube Substances 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical compound C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 description 2
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000008676 import Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 229920000307 polymer substrate Polymers 0.000 description 2
- 229920001289 polyvinyl ether Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- PMJHHCWVYXUKFD-SNAWJCMRSA-N (E)-1,3-pentadiene Chemical compound C\C=C\C=C PMJHHCWVYXUKFD-SNAWJCMRSA-N 0.000 description 1
- LIKMAJRDDDTEIG-UHFFFAOYSA-N 1-hexene Chemical compound CCCCC=C LIKMAJRDDDTEIG-UHFFFAOYSA-N 0.000 description 1
- BKOOMYPCSUNDGP-UHFFFAOYSA-N 2-methylbut-2-ene Chemical group CC=C(C)C BKOOMYPCSUNDGP-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 229920000557 Nafion® Polymers 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 150000001722 carbon compounds Chemical class 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000007567 mass-production technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- 125000004817 pentamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 238000013404 process transfer Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 238000002371 ultraviolet--visible spectrum Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/182—Graphene
- C01B32/184—Preparation
- C01B32/186—Preparation by chemical vapour deposition [CVD]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
Description
等离子体功率 | 时间 | 电阻(Ω) | 透射率(550nm) | |
1 | 50W | 180s | 26k | 78.2% |
2 | 50W | 60s | 38k | 83.2% |
3 | 50W | 30s | - | 85.2% |
4 | 100W | 180s | - | 74.9% |
5 | 150W | 180s | 26k | 79.2% |
6 | 200W | 180s | 6k | 65.4% |
7 | 50W | 15s | - | 78.9% |
Claims (25)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2010-0068634 | 2010-07-15 | ||
KR20100068634 | 2010-07-15 | ||
PCT/KR2011/005213 WO2012008789A2 (ko) | 2010-07-15 | 2011-07-15 | 그래핀의 저온 제조 방법, 및 이를 이용한 그래핀 직접 전사 방법 및 그래핀 시트 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN103140439A true CN103140439A (zh) | 2013-06-05 |
CN103140439B CN103140439B (zh) | 2017-06-09 |
Family
ID=45469951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201180044473.6A Active CN103140439B (zh) | 2010-07-15 | 2011-07-15 | 低温生产石墨烯的方法,直接转移用相同方法的石墨烯的方法与石墨烯片材 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9371234B2 (zh) |
JP (1) | JP5705315B2 (zh) |
KR (1) | KR101312454B1 (zh) |
CN (1) | CN103140439B (zh) |
WO (1) | WO2012008789A2 (zh) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102557017A (zh) * | 2010-12-07 | 2012-07-11 | 三星电子株式会社 | 石墨烯结构及其制造方法 |
CN103469308A (zh) * | 2013-08-30 | 2013-12-25 | 中国科学院过程工程研究所 | 一种二维原子晶体材料、其连续化生产方法及生产线 |
CN103469203A (zh) * | 2013-08-30 | 2013-12-25 | 中国科学院过程工程研究所 | 包覆二维原子晶体的基材、其连续化生产线及方法 |
CN104021881A (zh) * | 2014-06-03 | 2014-09-03 | 无锡格菲电子薄膜科技有限公司 | 一种降低石墨烯方阻的掺杂转移方法 |
CN104291325A (zh) * | 2014-09-14 | 2015-01-21 | 陈立晓 | 一种石墨烯透明薄膜的制备方法 |
CN104562195A (zh) * | 2013-10-21 | 2015-04-29 | 中国科学院上海微***与信息技术研究所 | 石墨烯的生长方法 |
CN104851521A (zh) * | 2015-02-03 | 2015-08-19 | 京东方科技集团股份有限公司 | 石墨烯导电薄膜及其制备方法 |
CN105645778A (zh) * | 2014-12-03 | 2016-06-08 | 北京大学 | 超级石墨烯玻璃及其制备方法与应用 |
CN105717724A (zh) * | 2014-12-03 | 2016-06-29 | 北京大学 | 超级石墨烯玻璃的应用 |
CN104021881B (zh) * | 2014-06-03 | 2016-11-30 | 无锡格菲电子薄膜科技有限公司 | 一种降低石墨烯方阻的掺杂转移方法 |
CN106233453A (zh) * | 2014-02-19 | 2016-12-14 | 三星电子株式会社 | 布线结构和采用该布线结构的电子装置 |
CN107001044A (zh) * | 2014-10-29 | 2017-08-01 | 艾克斯特朗欧洲公司 | 从籽晶结构体分离碳结构体的方法 |
CN107311157A (zh) * | 2016-07-19 | 2017-11-03 | 中国石油大学(北京) | 一种以co2为碳源低温制备石墨烯的方法 |
CN107873103A (zh) * | 2016-07-26 | 2018-04-03 | 海成帝爱斯株式会社 | 石墨烯线、使用石墨烯线的电缆及其制造方法 |
CN109406581A (zh) * | 2018-12-28 | 2019-03-01 | 苏州甫电子科技有限公司 | 石墨烯复合气体敏感材料、气敏传感器及其制作方法 |
CN109742379A (zh) * | 2019-01-28 | 2019-05-10 | 哈工大机器人(岳阳)军民融合研究院 | 一种在Si/C复合材料上生长石墨烯的方法、利用该方法制得的材料以及其应用 |
CN109879275A (zh) * | 2019-01-30 | 2019-06-14 | 宁波大学 | 一种结合锗浓缩和离子注入技术制备石墨烯的方法 |
US10332914B2 (en) | 2015-02-10 | 2019-06-25 | Boe Technology Group Co., Ltd. | Method of manufacturing electronic device and electronic device |
CN110904431A (zh) * | 2019-12-17 | 2020-03-24 | 中国科学院宁波材料技术与工程研究所 | 一种铜基氟化石墨烯耐蚀薄膜及其原位制备方法与应用 |
TWI806193B (zh) * | 2020-10-14 | 2023-06-21 | 加州理工學院 | 藉由電漿輔助化學氣相沉積形成石墨烯在可撓性基板上的方法及裝置 |
US11978704B2 (en) | 2014-02-19 | 2024-05-07 | Samsung Electronics Co., Ltd. | Wiring structure and electronic device employing the same |
Families Citing this family (55)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101878739B1 (ko) * | 2011-10-24 | 2018-07-17 | 삼성전자주식회사 | 그래핀 전사부재, 그래핀 전사방법 및 이를 이용한 그래핀 소자 제조방법 |
US9527043B2 (en) * | 2012-05-17 | 2016-12-27 | Samsung Electronics Co., Ltd. | Gas separation membrane and method of preparing the same |
KR101920716B1 (ko) | 2012-05-17 | 2019-02-13 | 삼성전자주식회사 | 기체 분리막 및 그 제조방법 |
JP5846582B2 (ja) * | 2012-07-26 | 2016-01-20 | 国立研究開発法人産業技術総合研究所 | グラフェンロールフィルム、グラフェンロールフィルムの成膜方法及び成膜装置 |
KR101556360B1 (ko) | 2012-08-16 | 2015-09-30 | 삼성전자주식회사 | 그래핀 물성 복귀 방법 및 장치 |
WO2014030534A1 (ja) * | 2012-08-20 | 2014-02-27 | 富士電機株式会社 | グラフェン積層体およびその製造方法 |
JP6083197B2 (ja) * | 2012-11-07 | 2017-02-22 | 富士通株式会社 | 配線構造及びその製造方法 |
JP6037813B2 (ja) * | 2012-12-14 | 2016-12-07 | Jx金属株式会社 | 多層グラフェン製造用圧延銅箔、及び多層グラフェンの製造方法 |
US9431487B2 (en) | 2013-01-11 | 2016-08-30 | International Business Machines Corporation | Graphene layer transfer |
KR101926488B1 (ko) * | 2013-02-06 | 2018-12-07 | 한화에어로스페이스 주식회사 | 그래핀 필름의 제조 방법 |
US9242865B2 (en) | 2013-03-05 | 2016-01-26 | Lockheed Martin Corporation | Systems and methods for production of graphene by plasma-enhanced chemical vapor deposition |
KR102093441B1 (ko) | 2013-03-11 | 2020-03-25 | 삼성전자주식회사 | 그래핀의 제조 방법 |
KR20140114199A (ko) | 2013-03-18 | 2014-09-26 | 삼성전자주식회사 | 이종 적층 구조체 및 그 제조방법, 및 상기 이종 적층 구조체를 구비하는 전기소자 |
CN103266306B (zh) * | 2013-05-22 | 2015-11-18 | 宜昌后皇真空科技有限公司 | 一种用pvd技术制备石墨烯或超薄碳膜的方法 |
JP2015013797A (ja) * | 2013-06-07 | 2015-01-22 | 独立行政法人産業技術総合研究所 | グラフェン透明導電膜の製造方法及び該方法により製造されたグラフェン透明導電膜 |
CN103343328A (zh) * | 2013-07-10 | 2013-10-09 | 合肥微晶材料科技有限公司 | 一种正压条件下合成石墨烯的方法 |
US9758381B2 (en) | 2013-08-05 | 2017-09-12 | National University Of Singapore | Method to transfer two dimensional film grown on metal-coated wafer to the wafer itself in a face-to face manner |
TWI592509B (zh) * | 2013-10-14 | 2017-07-21 | 國立清華大學 | 石墨烯薄膜製造方法 |
JP6241318B2 (ja) | 2014-02-28 | 2017-12-06 | 富士通株式会社 | グラフェン膜の製造方法及び半導体装置の製造方法 |
US10093072B2 (en) * | 2014-03-18 | 2018-10-09 | Ut-Battelle, Llc | Graphene reinforced materials and related methods of manufacture |
CN103943697B (zh) * | 2014-03-28 | 2016-08-31 | 京东方科技集团股份有限公司 | 柔性透明太阳能电池及其制备方法 |
KR20150121590A (ko) * | 2014-04-21 | 2015-10-29 | 이윤택 | 그래핀의 제조방법 및 그래핀 원자층이 식각되는 그래핀 제조방법 및 웨이퍼결합방법을 구비하는 그래핀 굽힘 트랜지스터, 및 그래핀 굽힘 트랜지스터 |
US10050104B2 (en) * | 2014-08-20 | 2018-08-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitor having a graphene structure, semiconductor device including the capacitor and method of forming the same |
KR101578359B1 (ko) | 2014-09-15 | 2015-12-17 | 이윤택 | 저온 기판 성장 그래핀의 제조방법 및 저온 기판 성장 그래핀 |
KR101648895B1 (ko) * | 2014-10-28 | 2016-08-17 | 한국표준과학연구원 | 금속박편 또는 금속박막에 성장한 그래핀을 임의의 기판에 고분자 레지듀 없이 전사하는 그래핀 가두리 전사방법 |
CN104532206A (zh) * | 2014-12-12 | 2015-04-22 | 中国科学院重庆绿色智能技术研究院 | 一种在绝缘衬底上原位生长掺杂石墨烯薄膜的制备方法 |
CN104556014B (zh) * | 2015-01-08 | 2017-03-29 | 复旦大学 | 一种非金属表面低温制备掺杂石墨烯的方法 |
KR101701369B1 (ko) | 2015-01-27 | 2017-02-01 | 한국과학기술연구원 | 탄소가 포함된 액체상의 전구체를 이용한 연속 롤투롤 방식의 고품질 그래핀 제조방법과 그 제조장치 |
JP6190562B2 (ja) * | 2015-03-26 | 2017-08-30 | 中国科学院上海微系統与信息技術研究所 | グラフェンの成長方法 |
WO2017009359A1 (de) * | 2015-07-14 | 2017-01-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V. | Verfahren zum abscheiden einer graphenbasierten schicht auf einem substrat mittels pecvd |
TWI539043B (zh) | 2015-07-21 | 2016-06-21 | 財團法人工業技術研究院 | 石墨烯花的形成方法 |
JP2017037820A (ja) * | 2015-08-14 | 2017-02-16 | アルプス電気株式会社 | 接点材料、接点材料の製造方法、コネクタ、および電子・電気部品 |
US10246795B2 (en) * | 2015-09-22 | 2019-04-02 | Kuk-II Graphene Co., Ltd. | Transfer-free method for forming graphene layer |
KR101886659B1 (ko) * | 2015-09-22 | 2018-08-09 | 충남대학교산학협력단 | 무전사식 그래핀층의 형성 방법 |
WO2017062784A1 (en) * | 2015-10-07 | 2017-04-13 | The Regents Of The University Of California | Graphene-based multi-modal sensors |
US20170144888A1 (en) * | 2015-11-23 | 2017-05-25 | G-Force Nanotechnology Ltd. | Method for growing graphene by chemical vapor deposition |
WO2017159062A1 (ja) | 2016-03-17 | 2017-09-21 | 国立大学法人名古屋工業大学 | カンチレバーおよびカンチレバーの製造方法 |
CN106423788B (zh) * | 2016-10-11 | 2019-10-01 | 青岛理工大学 | 一种中碳钢基体的刻蚀方法、减摩耐磨复合润滑膜及其制备方法 |
US11524898B2 (en) | 2016-11-04 | 2022-12-13 | Massachusetts Institute Of Technology | Formation of pores in atomically thin layers |
US11124870B2 (en) * | 2017-06-01 | 2021-09-21 | Kuk-Il Graphene Co., Ltd. | Transfer-free method for producing graphene thin film |
KR101999564B1 (ko) * | 2017-06-02 | 2019-07-12 | 재단법인 나노기반소프트일렉트로닉스연구단 | 구리박막/니켈박막 적층체를 이용한 화학기상증착에 의한 층수가 제어된 그래핀 합성 방법 |
KR20190003186A (ko) * | 2017-06-30 | 2019-01-09 | 주식회사 솔루에타 | 고방열 박막 및 그 제조 방법 |
US11180373B2 (en) * | 2017-11-29 | 2021-11-23 | Samsung Electronics Co., Ltd. | Nanocrystalline graphene and method of forming nanocrystalline graphene |
US11217531B2 (en) | 2018-07-24 | 2022-01-04 | Samsung Electronics Co., Ltd. | Interconnect structure having nanocrystalline graphene cap layer and electronic device including the interconnect structure |
KR102532605B1 (ko) | 2018-07-24 | 2023-05-15 | 삼성전자주식회사 | 나노결정질 그래핀 캡층을 포함하는 인터커넥트 구조체 및 이 인터커넥트 구조체를 포함하는 전자 소자 |
KR20200011821A (ko) | 2018-07-25 | 2020-02-04 | 삼성전자주식회사 | 탄소물 직접 성장방법 |
KR102601607B1 (ko) | 2018-10-01 | 2023-11-13 | 삼성전자주식회사 | 그래핀의 형성방법 |
KR102341186B1 (ko) | 2018-12-21 | 2021-12-21 | 퍼포먼스 나노카본, 아이엔씨. | 기체-액체 물질 전달을 통한 탄소 재료의 동일반응계내 생산 및 작용성화 및 이의 사용 |
KR20200126721A (ko) | 2019-04-30 | 2020-11-09 | 삼성전자주식회사 | 그래핀 구조체 및 그래핀 구조체의 형성방법 |
CN110963484A (zh) * | 2019-12-23 | 2020-04-07 | 中国科学院长春光学精密机械与物理研究所 | 基于掺杂层辅助的大面积高质量石墨烯无损转移方法 |
CN112011783B (zh) * | 2020-09-03 | 2022-09-09 | 太原理工大学 | 锆合金表面氧化锆催化石墨烯生长的低温化学气相沉积法 |
WO2023121714A1 (en) * | 2021-12-22 | 2023-06-29 | General Graphene Corporation | Novel systems and methods for high yield and high throughput production of graphene |
US11718526B2 (en) | 2021-12-22 | 2023-08-08 | General Graphene Corporation | Systems and methods for high yield and high throughput production of graphene |
KR20230101545A (ko) * | 2021-12-29 | 2023-07-06 | 재단법인 파동에너지 극한제어 연구단 | 줄히팅 기반 롤투롤 그래핀 제조방법 및 그래핀 제조장치 |
WO2023225055A1 (en) * | 2022-05-17 | 2023-11-23 | Georgia State University Research Foundation, Inc. | Water surface tension enabled high quality graphene transfer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101423209A (zh) * | 2007-10-29 | 2009-05-06 | 三星电子株式会社 | 石墨烯片及其制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3962862B2 (ja) * | 2002-02-27 | 2007-08-22 | 日立造船株式会社 | カーボンナノチューブを用いた導電性材料およびその製造方法 |
US8153240B2 (en) * | 2003-10-03 | 2012-04-10 | College Of William And Mary | Carbon nanostructures and methods of making and using the same |
KR20090026568A (ko) | 2007-09-10 | 2009-03-13 | 삼성전자주식회사 | 그라펜 시트 및 그의 제조방법 |
JP5470610B2 (ja) * | 2007-10-04 | 2014-04-16 | 国立大学法人福井大学 | グラフェンシートの製造方法 |
KR101344493B1 (ko) * | 2007-12-17 | 2013-12-24 | 삼성전자주식회사 | 단결정 그라펜 시트 및 그의 제조방법 |
KR101462401B1 (ko) | 2008-06-12 | 2014-11-17 | 삼성전자주식회사 | 그라펜 시트로부터 탄소화 촉매를 제거하는 방법, 탄소화촉매가 제거된 그라펜 시트를 소자에 전사하는 방법, 이에따른 그라펜 시트 및 소자 |
KR101501599B1 (ko) | 2008-10-27 | 2015-03-11 | 삼성전자주식회사 | 그라펜 시트로부터 탄소화 촉매를 제거하는 방법 및 그라펜시트의 전사 방법 |
US20100297435A1 (en) * | 2009-01-28 | 2010-11-25 | Kaul Anupama B | Nanotubes and related manufacturing processes |
TW201116606A (en) * | 2009-11-03 | 2011-05-16 | Nat Univ Tsing Hua | Method and an apparatus for transferring carbonaceous material layer |
US8101474B2 (en) * | 2010-01-06 | 2012-01-24 | International Business Machines Corporation | Structure and method of forming buried-channel graphene field effect device |
US20110195207A1 (en) * | 2010-02-08 | 2011-08-11 | Sungkyunkwan University Foundation For Corporate Collaboration | Graphene roll-to-roll coating apparatus and graphene roll-to-roll coating method using the same |
JP5692794B2 (ja) * | 2010-03-17 | 2015-04-01 | 独立行政法人産業技術総合研究所 | 透明導電性炭素膜の製造方法 |
-
2011
- 2011-07-15 JP JP2013519605A patent/JP5705315B2/ja active Active
- 2011-07-15 US US13/810,144 patent/US9371234B2/en active Active
- 2011-07-15 WO PCT/KR2011/005213 patent/WO2012008789A2/ko active Application Filing
- 2011-07-15 KR KR1020110070262A patent/KR101312454B1/ko active IP Right Grant
- 2011-07-15 CN CN201180044473.6A patent/CN103140439B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101423209A (zh) * | 2007-10-29 | 2009-05-06 | 三星电子株式会社 | 石墨烯片及其制备方法 |
Non-Patent Citations (2)
Title |
---|
K. D. MACKENZIE ETAL.: "INDUCTIVELY-COUPLED PLASMA DEPOSITION OF LOW TEMPERATURE SILICON DIOXIDE AND SILICON NITRIDE FILMS FOR III-V APPLICATIONS", 《PROC. SYMP. 30TH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS》 * |
SUKANG BAE ETAL.: "Roll-to-roll production of 30-inch graphene films for transparent electrodes", 《NATURE NANOTECHNOLOGY》 * |
Cited By (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102557017A (zh) * | 2010-12-07 | 2012-07-11 | 三星电子株式会社 | 石墨烯结构及其制造方法 |
CN102557017B (zh) * | 2010-12-07 | 2017-04-12 | 三星电子株式会社 | 石墨烯结构及其制造方法 |
US9230801B2 (en) | 2010-12-07 | 2016-01-05 | Samsung Electronics Co., Ltd. | Graphene structure and method of fabricating the same |
CN103469308B (zh) * | 2013-08-30 | 2016-06-08 | 中国科学院过程工程研究所 | 一种二维原子晶体材料、其连续化生产方法及生产线 |
CN103469308A (zh) * | 2013-08-30 | 2013-12-25 | 中国科学院过程工程研究所 | 一种二维原子晶体材料、其连续化生产方法及生产线 |
CN103469203A (zh) * | 2013-08-30 | 2013-12-25 | 中国科学院过程工程研究所 | 包覆二维原子晶体的基材、其连续化生产线及方法 |
CN103469203B (zh) * | 2013-08-30 | 2016-05-18 | 中国科学院过程工程研究所 | 包覆二维原子晶体的基材、其连续化生产线及方法 |
CN104562195B (zh) * | 2013-10-21 | 2017-06-06 | 中国科学院上海微***与信息技术研究所 | 石墨烯的生长方法 |
CN104562195A (zh) * | 2013-10-21 | 2015-04-29 | 中国科学院上海微***与信息技术研究所 | 石墨烯的生长方法 |
US11978704B2 (en) | 2014-02-19 | 2024-05-07 | Samsung Electronics Co., Ltd. | Wiring structure and electronic device employing the same |
CN106233453A (zh) * | 2014-02-19 | 2016-12-14 | 三星电子株式会社 | 布线结构和采用该布线结构的电子装置 |
CN104021881A (zh) * | 2014-06-03 | 2014-09-03 | 无锡格菲电子薄膜科技有限公司 | 一种降低石墨烯方阻的掺杂转移方法 |
CN104021881B (zh) * | 2014-06-03 | 2016-11-30 | 无锡格菲电子薄膜科技有限公司 | 一种降低石墨烯方阻的掺杂转移方法 |
CN104291325A (zh) * | 2014-09-14 | 2015-01-21 | 陈立晓 | 一种石墨烯透明薄膜的制备方法 |
CN107001044A (zh) * | 2014-10-29 | 2017-08-01 | 艾克斯特朗欧洲公司 | 从籽晶结构体分离碳结构体的方法 |
CN107001044B (zh) * | 2014-10-29 | 2020-10-27 | 艾克斯特朗欧洲公司 | 从籽晶结构体分离碳结构体的方法 |
CN105645778B (zh) * | 2014-12-03 | 2018-10-23 | 北京大学 | 超级石墨烯玻璃及其制备方法与应用 |
CN105717724A (zh) * | 2014-12-03 | 2016-06-29 | 北京大学 | 超级石墨烯玻璃的应用 |
CN105717724B (zh) * | 2014-12-03 | 2019-02-12 | 北京石墨烯研究院有限公司 | 超级石墨烯玻璃的应用 |
CN105645778A (zh) * | 2014-12-03 | 2016-06-08 | 北京大学 | 超级石墨烯玻璃及其制备方法与应用 |
US10124565B2 (en) | 2015-02-03 | 2018-11-13 | Boe Technology Group Co., Ltd. | Graphene conductive film and method for forming the same, and flexible touch device |
CN104851521A (zh) * | 2015-02-03 | 2015-08-19 | 京东方科技集团股份有限公司 | 石墨烯导电薄膜及其制备方法 |
US10332914B2 (en) | 2015-02-10 | 2019-06-25 | Boe Technology Group Co., Ltd. | Method of manufacturing electronic device and electronic device |
CN107311157A (zh) * | 2016-07-19 | 2017-11-03 | 中国石油大学(北京) | 一种以co2为碳源低温制备石墨烯的方法 |
CN107873103A (zh) * | 2016-07-26 | 2018-04-03 | 海成帝爱斯株式会社 | 石墨烯线、使用石墨烯线的电缆及其制造方法 |
CN109406581B (zh) * | 2018-12-28 | 2024-03-01 | 苏州甫一电子科技有限公司 | 石墨烯复合气体敏感材料、气敏传感器及其制作方法 |
CN109406581A (zh) * | 2018-12-28 | 2019-03-01 | 苏州甫电子科技有限公司 | 石墨烯复合气体敏感材料、气敏传感器及其制作方法 |
CN109742379A (zh) * | 2019-01-28 | 2019-05-10 | 哈工大机器人(岳阳)军民融合研究院 | 一种在Si/C复合材料上生长石墨烯的方法、利用该方法制得的材料以及其应用 |
CN109879275A (zh) * | 2019-01-30 | 2019-06-14 | 宁波大学 | 一种结合锗浓缩和离子注入技术制备石墨烯的方法 |
CN110904431A (zh) * | 2019-12-17 | 2020-03-24 | 中国科学院宁波材料技术与工程研究所 | 一种铜基氟化石墨烯耐蚀薄膜及其原位制备方法与应用 |
US11823895B2 (en) | 2020-10-14 | 2023-11-21 | California Institute Of Technology | Methods and devices for graphene formation on flexible substrates by plasma-enhanced chemical vapor deposition |
TWI806193B (zh) * | 2020-10-14 | 2023-06-21 | 加州理工學院 | 藉由電漿輔助化學氣相沉積形成石墨烯在可撓性基板上的方法及裝置 |
Also Published As
Publication number | Publication date |
---|---|
US9371234B2 (en) | 2016-06-21 |
CN103140439B (zh) | 2017-06-09 |
WO2012008789A3 (ko) | 2012-05-31 |
US20130187097A1 (en) | 2013-07-25 |
KR101312454B1 (ko) | 2013-09-27 |
KR20120007998A (ko) | 2012-01-25 |
JP2013530124A (ja) | 2013-07-25 |
WO2012008789A2 (ko) | 2012-01-19 |
JP5705315B2 (ja) | 2015-04-22 |
WO2012008789A9 (ko) | 2012-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN103140439A (zh) | 低温生产石墨烯的方法,直接转移用相同方法的石墨烯的方法与石墨烯片材 | |
Kumar et al. | A review on synthesis of graphene, h-BN and MoS 2 for energy storage applications: Recent progress and perspectives | |
Zhang et al. | Graphene and MXene-based transparent conductive electrodes and supercapacitors | |
Huang et al. | Growth of single-layer and multilayer graphene on Cu/Ni alloy substrates | |
KR101234180B1 (ko) | 그래핀 필름의 롤투롤 도핑 방법 및 도핑된 그래핀 필름 | |
Yeh et al. | Single-step growth of graphene and graphene-based nanostructures by plasma-enhanced chemical vapor deposition | |
Vishnoi et al. | 2D elemental nanomaterials beyond graphene | |
Jia et al. | Copper-containing carbon feedstock for growing superclean graphene | |
Sutter et al. | Interface formation in monolayer graphene-boron nitride heterostructures | |
Craciun et al. | Properties and applications of chemically functionalized graphene | |
KR101262327B1 (ko) | 그래핀의 롤투롤 전사 방법, 그래핀의 롤투롤 전사 장치 및 그래핀 롤 | |
Chen et al. | Growth of large-area graphene single crystals in confined reaction space with diffusion-driven chemical vapor deposition | |
US8906245B2 (en) | Material trivial transfer graphene | |
Chen et al. | Vertically-oriented graphene | |
EP2850032B1 (en) | Methods of growing uniform, large-scale, multilayer graphene films | |
US20130130011A1 (en) | Method for preparing graphene, graphene sheet, and device using same | |
Guo et al. | Selective‐Area Van der Waals Epitaxy of Topological Insulator Grid Nanostructures for Broadband Transparent Flexible Electrodes | |
CN102220566A (zh) | 一种化学气相沉积制备单层和多层石墨烯的方法 | |
Shin et al. | Synthesis and applications of graphene electrodes | |
Das et al. | Facile synthesis of multi-layer graphene by electrochemical exfoliation using organic solvent | |
Vijapur et al. | Raw coal derived large area and transparent graphene films | |
Kolodziejczyk et al. | Frictional behaviour of polycrystalline graphene grown on liquid metallic matrix | |
Genorio et al. | Functionalization of graphene nanoribbons | |
Wang et al. | Low-temperature nanowelding silver nanowire hybrid flexible transparent conductive film for green light OLED devices | |
Azevedo et al. | Versatile wafer-scale technique for the formation of ultrasmooth and thickness-controlled graphene oxide films based on very large flakes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: GRAPHENE SQUARE CO., LTD. Free format text: FORMER OWNER: SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION Effective date: 20131021 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20131021 Address after: Seoul, South Kerean Applicant after: Graphene Square Co., Ltd. Applicant after: Samsung Techwin Co., Ltd. Address before: Gyeonggi Do, South Korea Applicant before: Seok Chang Sung Applicant before: Samsung Techwin Co., Ltd. |
|
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Seoul, South Kerean Applicant after: Graphene Square Co., Ltd. Applicant after: SAMSUNG TECHWIN CO., LTD. Address before: Seoul, South Kerean Applicant before: Graphene Square Co., Ltd. Applicant before: Samsung Techwin Co., Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: SAMSUNG TAI KEWEI CO., LTD. TO: HANWHA TECHWIN CO., LTD. Free format text: CORRECT: ADDRESS; FROM: |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Seoul, South Kerean Co-patentee after: South Korea and China Aerospace Corporation Patentee after: Graphene Square Co., Ltd. Address before: Seoul, South Kerean Co-patentee before: HANWHA TECHWIN CO., LTD. Patentee before: Graphene Square Co., Ltd. |
|
CP01 | Change in the name or title of a patent holder |