CN102912414A - Polycrystalline silicon ingot production furnace and crucible thereof - Google Patents
Polycrystalline silicon ingot production furnace and crucible thereof Download PDFInfo
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- CN102912414A CN102912414A CN2012103896229A CN201210389622A CN102912414A CN 102912414 A CN102912414 A CN 102912414A CN 2012103896229 A CN2012103896229 A CN 2012103896229A CN 201210389622 A CN201210389622 A CN 201210389622A CN 102912414 A CN102912414 A CN 102912414A
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- polycrystalline silicon
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Abstract
The invention discloses a polycrystalline silicon ingot production furnace comprising a top heater and a side heater which are arranged in a furnace chamber, and further comprising a central heater arranged in the furnace chamber and used for heating middle polycrystalline silicon materials in a crucible. Because the central heater is arranged in the middle of the furnace chamber of the polycrystalline silicon ingot production furnace, the central heater emits heat at the same time while the top heater and the side heater emit heat, the temperature of the polycrystalline silicon materials in the crucible rises quickly, the heat transmission distance between the polycrystalline silicon materials in the outer side of the crucible and the polycrystalline silicon materials in the middle of the crucible is shortened simultaneously, the heat transmission time is reduced, and energy loss caused by overlong heating time is avoided. In addition, the central heater is arranged, so that the temperature difference between the polycrystalline silicon materials in the middle of the crucible and the polycrystalline silicon materials in the outer side of the crucible is reduced, and the quality of the polycrystalline silicon ingots are ensured. The invention also discloses the crucible for the polycrystalline silicon ingot production furnace.
Description
Technical field
The present invention relates to field of polysilicon technology, particularly relate to a kind of polycrystalline silicon ingot or purifying furnace.In addition, the invention still further relates to a kind of crucible for above-mentioned polycrystalline silicon ingot or purifying furnace.
Background technology
In the making processes of polycrystalline silicon battery plate, the casting polycrystalline silicon ingot is one important technique, and the quality of polycrystalline silicon ingot casting will directly affect efficiency of conversion and the quality of solar cell.
The casting polycrystalline silicon ingot roughly can be divided into three operations: spraying-charging-ingot casting.Wherein, the material that spraying process is used is silicon nitride solution and crucible, and crucible is made with high-purity silicon-dioxide usually; Silicon nitride solution is used for spraying on the crucible inwall, and its effect is with silicon solution and crucible isolation, prevents both in conjunction with reacting, and causes sticking pot phenomenon.Stocking process is that fragmentary silicon material is placed in the crucible that has sprayed silicon nitride solution on request.The ingot casting operation is that the crucible that installs the silicon material is packed into behind the ingot furnace, through furnace chamber find time, heat, melt, long brilliant, annealing, cool off after, finish the casting of silicon ingot.The heat of every one-phase of ingot casting operation provides all and is provided by polycrystalline silicon ingot or purifying furnace.
Please refer to Fig. 1, Fig. 2 and Fig. 3; Fig. 1 is the structural representation of crucible in the prior art; Fig. 2 is the structural representation of polycrystalline silicon ingot or purifying furnace when the silicon material melts in the prior art; Fig. 3 be in the prior art polycrystalline silicon ingot or purifying furnace at the structural representation in long brilliant stage.
As can be seen from the figure, be provided with top heater 101 and side heater 102 in the polycrystalline silicon ingot or purifying furnace, top heater 101 and side heater 102 are made as one, fix by top copper electrode 103 and body of heater, and in body of heater, be provided with temperature measuring equipment, top heater 101 and side heater 102 provide heat, temperature measuring equipment with Temperature Feedback to programmable logic controller, programmable logic controller compares data and the predefined program of polycrystalline silicon ingot or purifying furnace again, the control of well heater is realized the whole process of polycrystalline silicon ingot casting by PID control.In the whole process of polycrystal silicon ingot casting, top heater 101 and side heater 102 are to heat to the outside silicon material in the crucible 200 by thermal-radiating mode, and the intensification of the middle part silicon material in the crucible 200 is then finished by the heat transmission of outside silicon material fully.
There is following problem in above-mentioned polycrystalline silicon ingot or purifying furnace in the castingprocesses of silicon ingot:
One, because top heater 101 and side heater 102 heat the outside silicon material that is positioned at crucible 200 by thermal-radiating mode, can't the middle part silicon material in the crucible 200 be heated, so the intensification of the middle part silicon material in the crucible 200 realizes by the heat transmission of crucible 200 interior outside silicon material fully, and the temperature difference of the outside silicon material in the crucible 200 and middle part silicon material is very large, make the temperature of crucible 200 interior silicon material reach evenly required time just very long, thus the waste electric energy.
Its two, in long brilliant process, because the outside temperature difference is large in the silicon material, the silicon material of fusing can be because annularly flow appear in the temperature difference, the temperature difference is larger, annularly flow is larger, the long destruction that can cause when brilliant crystal grain affects the silicon ingot quality.
In view of this, how polycrystalline silicon ingot or purifying furnace of the prior art being made improvement, with the quality of raising polycrystalline silicon ingot casting, and reduce energy consumption, is present those skilled in the art's technical issues that need to address.
Summary of the invention
The purpose of this invention is to provide a kind of polycrystalline silicon ingot or purifying furnace, this polycrystalline silicon ingot or purifying furnace can improve the quality of polycrystalline silicon ingot casting, and can reduce energy consumption.Another object of the present invention provides a kind of crucible for above-mentioned polycrystalline silicon ingot or purifying furnace.
For solving the problems of the technologies described above, the invention provides a kind of polycrystalline silicon ingot or purifying furnace, comprise top heater and the side heater be located in the furnace chamber, also comprise the central heater of being located in the furnace chamber, in order to the middle part silicon material in the crucible is heated.
Preferably, described central heater is fixed on the upper furnace body by top electrode and central copper electrode, and the lower end of described top electrode and described central heater are affixed, and top thermofin and affixed with the lower end of described central copper electrode is passed in its upper end; Described central copper electrode is packed on the described upper furnace body, and its upper end tie cable; The inwall of described central heater is provided with thermo detector, is used for Temperature Feedback with the middle part warm area to programmable logic controller; Described programmable logic controller is used for the heat-up time of control center's well heater.
Preferably, the logical pure water of the centre portions of described cable and described central copper electrode.
Preferably, described central copper electrode and described top electrode are threaded connection.
Preferably, described top electrode is fixedly connected with described central heater with the graphite nut by the graphite screw rod.
Preferably, be provided with ceramic gasket between described top electrode and the described top thermofin.
Preferably, be provided with insulation layer between described central copper electrode and the described upper furnace body.
Preferably, described central heater has hollow cylindrical structure.
Relative above-mentioned background technology, polycrystalline silicon ingot or purifying furnace provided by the present invention comprises top heater and the side heater of being located in the furnace chamber, also comprises the central heater of being located in the furnace chamber, is used for the middle part silicon material in the crucible is heated.Because the furnace chamber middle part at polycrystalline silicon ingot or purifying furnace is equipped with central heater, in top heater and side heater heating, central heater is simultaneously heating also, can improve fast the temperature of silicon material in the crucible, shortened simultaneously the distance that silicon material heat was transmitted in the middle part of outside silicon was expected in the crucible, reduce heat transfer time, avoided the power loss that causes because heat-up time is long.In addition, owing to being provided with central heater, the temperature head of silicon material and outside silicon material in the middle part of can also reducing in the crucible, avoided because the annularly flow of the silicon solution inside that temperature head causes, guaranteed the continuity of crystal grain in process of growth, thereby improved crystal mass, and then improved the quality of polycrystalline silicon ingot casting.
In addition, the present invention also provides a kind of crucible for above-mentioned polycrystalline silicon ingot or purifying furnace, and the centre of described crucible is provided with through hole, is used for the central heater of placing above-mentioned polycrystalline silicon ingot or purifying furnace.
Description of drawings
Fig. 1 is the structural representation of crucible in the prior art;
Fig. 2 is the structural representation of polycrystalline silicon ingot or purifying furnace when the silicon material melts in the prior art;
Fig. 3 be in the prior art polycrystalline silicon ingot or purifying furnace at the structural representation in long brilliant stage;
Structural representation when Fig. 4 is polycrystalline silicon ingot or purifying furnace use state provided by the present invention;
Fig. 5 is the sectional view of the central heater of polycrystalline silicon ingot or purifying furnace shown in Fig. 4;
Fig. 6 is the vertical view of central heater shown in Fig. 5;
Fig. 7 is the front view of the top electrode of polycrystalline silicon ingot or purifying furnace shown in Fig. 4;
Fig. 8 is the vertical view of top electrode shown in Fig. 7;
Fig. 9 is the upward view of top electrode shown in Fig. 7;
Figure 10 is the sectional view of the central copper electrode of polycrystalline silicon ingot or purifying furnace shown in Fig. 4;
Figure 11 is the vertical view of central copper electrode shown in Figure 10;
Figure 12 is the sectional view of the cable of polycrystalline silicon ingot or purifying furnace provided by the present invention;
Figure 13 is that the axle of crucible provided by the present invention measures intention;
Figure 14 is the sectional view of crucible shown in Figure 13.
Among Fig. 4-Figure 14:
Body of heater 10, upper furnace body 11, lower furnace body 12, furnace chamber 13, thermofin 20, top thermofin 21, side thermofin 22, bottom thermal insulation layer 23, heating unit 30, top heater 31, side heater 32, central heater 33, open holes 331, top copper electrode 41, central copper electrode 42, water-in 421, water outlet 422, subpanel 423, outside screw 424, cable 50, top electrode 60, internal thread 61, crucible 70, through hole 71, supporting structure 80
Embodiment
Core of the present invention provides a kind of polycrystalline silicon ingot or purifying furnace, and this polycrystalline silicon ingot or purifying furnace can improve the quality of polycrystalline silicon ingot casting, and can reduce energy consumption.Another core of the present invention provides a kind of crucible for above-mentioned polycrystalline silicon ingot or purifying furnace.
In order to make those skilled in the art person understand better the present invention program, the present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Please refer to Fig. 4 to Figure 12; Structural representation when Fig. 4 is polycrystalline silicon ingot or purifying furnace use state provided by the present invention; Fig. 5 is the sectional view of the central heater of polycrystalline silicon ingot or purifying furnace shown in Fig. 4; Fig. 6 is the vertical view of central heater shown in Fig. 5; Fig. 7 is the front view of the top electrode of polycrystalline silicon ingot or purifying furnace shown in Fig. 4; Fig. 8 is the vertical view of top electrode shown in Fig. 7; Fig. 9 is the upward view of top electrode shown in Fig. 7; Figure 10 is the sectional view of the central copper electrode of polycrystalline silicon ingot or purifying furnace shown in Fig. 4; Figure 11 is the vertical view of central copper electrode shown in Figure 10; Figure 12 is the sectional view of the cable of polycrystalline silicon ingot or purifying furnace provided by the present invention.
In a kind of embodiment, polycrystalline silicon ingot or purifying furnace provided by the present invention comprises body of heater 10, thermofin 20, crucible 70 and the heating unit 30 with furnace chamber 13.
Wherein, body of heater 10 comprises upper furnace body 11 and lower furnace body 12, and upper furnace body 11 and lower furnace body 12 are separable; Thermofin 20 is arranged in the furnace chamber 13, and described thermofin 20 comprises top thermofin 21, side thermofin 22 and bottom thermal insulation layer 23; Top thermofin 21 is fixed on the upper furnace body 11; Side thermofin 22 by the lifting mechanism (not shown) relatively top thermofin 21 slide up and down, the bottom of side thermofin 22 contacts with bottom thermal insulation layer 23, when side thermofin 22 upwards promoted by lifting mechanism, its bottom can break away from bottom thermal insulation layer 23.
Crucible 70 is arranged in the thermofin 20, and is fixed on the lower furnace body 12 by supporting structure 80; Simultaneously, bottom thermal insulation layer 23 is fixed on the supporting structure 80.
Wherein, top heater 31 and side heater 32 can be processed as one, and top heater 31 is connected with top copper electrode 41 by the top electrodes head, and top copper electrode 41 is fixed on the upper furnace body 11.For fear of waste of energy and safety problem, between top copper electrode 41 and upper furnace body 11, be provided with insulation layer.
In order to prevent conduction between central heater 33 and the top thermofin 21, cause the generation of waste of energy and security incident, between top electrode 60 and top thermofin 21, be provided with the ceramic gasket (not shown).
Preferably, central heater 33 has hollow cylindrical structure, which is provided with open holes 331, is used for fixing with top electrode 60 installations, can with the graphite nut top electrode 60 be fixedly connected with central heater 33 by the graphite screw rod.Wherein, top electrode 60 and the connection portion of central heater 33 and the respective outer side edges of central heater 33 are combined closely with central heater 33 to guarantee installation rear electrode head 60, avoid connecting the unreal virtual connection that occurs, and cause the overheated central heater 33 of burning.
The upper end of central copper electrode 42 is connected with cable 50, is used for the supply of electric energy.Because polycrystalline silicon ingot or purifying furnace in use, need to expend a large amount of electric energy, part energy can be because cable 50 internal resistances own be converted into heat, if long meeting working time causes cable 50 to burn; In addition; because the fusing point of copper is lower than the fusing point of silicon; in operational process, also can cause 42 fusings of central copper electrode; generation for fear of above-mentioned phenomenon; can be at central copper electrode 42 and cable 50 interior logical pure water; pure water can be taken away heat in the process that flows, thus protection central copper electrode 42 and cable 50.
Particularly; be provided with water-in 421 and water outlet 422 in the upper end of central copper electrode 42, wherein cable 50 is connected with the water outlet 422 of central copper electrode 42, and pure water can be in central copper electrode 42 and cable 50 internal flows; protect simultaneously central copper electrode 42 not to be melted, cable 50 is not burnt.
Here need to prove, the top copper electrode 41 that is connected with the top electrodes head and the similar of above-mentioned central copper electrode 42, and the mode of connection of top electrodes head and top copper electrode 41 is also similar, repeats no more here.
The inwall of central heater 33 also is equipped with the thermo detector (not shown), be used for Temperature Feedback with crucible 70 interior middle part warm areas to programmable logic controller, temperature and predefined program that programmable logic controller is used for thermo detector is recorded compare, control to regulate the power supply length of heat-up time by PID, thereby change the heat of input.
Preferably, central heater 33 and top electrode 60 are made by graphite material; This is because the resistance homogeneity of graphite material is good especially, and the thermal field that is positioned at around the central heater 33 is evenly distributed.
Correspondingly, in order to cooperate the thermal field structure of polycrystalline silicon ingot or purifying furnace, the center of crucible 70 is provided with through hole, is used for holding central heater 33, thereby in the polycrystal silicon ingot castingprocesses middle part silicon material that is positioned at crucible 70 is heated.
During the casting polycrystalline silicon ingot, at the even spraying silicon nitride solution of the inwall of crucible 70, after the oven dry, fragmentary polycrystalline silicon material is packed in the crucible 70, the crucible 70 that installs the silicon material is placed on the supporting structure 80, make upper furnace body 11 and lower furnace body 12 closures by operation.The bottom of side thermofin 22 contacts with bottom thermal insulation layer 23 at this moment, and top thermofin 21, side thermofin 22 and bottom thermal insulation layer 23 form the thermal field chamber of a sealing; Furnace chamber 13 inside are comprised that the thermal field chamber is evacuated, prevent atmospheric oxygen SiClx material, after vacuum tightness reaches processing requirement, switch on to heating unit 30 by cable 50 and copper electrode, the silicon material in the crucible 70 are heated to fully fusing; During heating, top heater 31 and side heater 32 are in heating, central heater 33 also begins heating, so, its temperature of the heating of central heater 33 is positioned at the silicon material in crucible 70 centres because can raise fast, and the heat transfer distance that is positioned at the outside silicon material of crucible 70 shortens, and has further accelerated the burn-off rate of crucible 70 interior silicon material.
After the silicon material in the crucible 70 at high temperature melts, the beginning decrease temperature crystalline; At this moment, by control center's well heater 33 and top heater 31, the temperature of side heater 32, the temperature head of guaranteeing crucible 70 interior middle part silicon material and outside silicon material is zero, by lift mechanism lifts side thermofin 22, because the effect of lagging material, formation temperature is poor between furnace chamber 13 and thermal field chamber, when side thermofin 22 is separated from by lifting mechanism and bottom thermal insulation layer 23, heat distributes in furnace chamber 13 from crucible 70 bottoms, thereby crucible 70 bottom temps are reduced, cause the silicon material generation crystalline polamer of crucible 70 bottoms, along with the lifting of side thermofin 22, because the up and down temperature head in the thermal field chamber, form a vertical temperature gradient field at crystal plane, by control heat radiation and heating, crystal is grown up gradually, finish until solidify, form polycrystalline silicon ingot casting; Then fall side thermofin 22 by lifting mechanism, its bottom be shelved on the bottom thermal insulation layer 23 again, stopped heating, eliminate polycrystalline silicon ingot casting the top internal stress, Slow cooling is come out of the stove to tapping temperature.
Here need to prove, above-mentioned middle part silicon material and outside silicon material all are that namely the silicon material near sidewall around the crucible 70 is outside silicon material take the position of crucible 70 interior silicon material as the benchmark definition, and the silicon material that is positioned at crucible 70 centers is middle part silicon material, the following stated similarly repeats no more
Also it is to be noted, central heater 33 and top heater 31, side heater 32 are independent control, the heat input that is central heater 33 and top heater 31, side heater 32 is independent respectively, can according to the required different value that is set to of reality, conveniently the silicon material temperature degree of crucible 70 interior different sites be controlled.
Polycrystalline silicon ingot or purifying furnace provided by the invention is because central heater has been installed in the centre; in conjunction with existing top heater and side heater; improved the heat input; and shortened the heat transfer distance of silicon material in the middle part of outside silicon is expected in the crucible; can the Quick high-temperature; shorten heat-up time; not only improved energy utilization rate; avoided the heat-energy losses that causes because heat-up time is long; can also reduce the temperature head of middle part silicon material and outside silicon material; avoid because the annularly flow of the silicon solution inside that temperature head causes; thereby annularly flow is to the destruction of crystal grain when having avoided long crystalline substance; effectively protect the continuity of crystal grain in process of growth, guaranteed the quality of polycrystalline silicon ingot casting.
Please refer to Figure 13 and Figure 14; Figure 13 is that the axle of crucible provided by the present invention measures intention; Figure 14 is the sectional view of crucible shown in Figure 13.
In addition, the present invention also provides a kind of crucible 70 for above-mentioned polycrystalline silicon ingot or purifying furnace, because the change of above-mentioned thermal field structure of polycrystalline silicon casting furnace, in order to match with it, the center of described crucible 70 is provided with through hole 71, be used for the central heater 33 place described polycrystalline silicon ingot or purifying furnace, made elaboration above-mentioned when introducing polycrystalline silicon ingot or purifying furnace, repeat no more here.
Above polycrystalline silicon ingot or purifying furnace provided by the present invention and crucible thereof are described in detail.Used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection domain of claim of the present invention.
Claims (9)
1. a polycrystalline silicon ingot or purifying furnace comprises top heater and the side heater be located in the furnace chamber, it is characterized in that, also comprises the central heater of being located in the furnace chamber, in order to the middle part silicon material in the crucible is heated.
2. polycrystalline silicon ingot or purifying furnace as claimed in claim 1, it is characterized in that, described central heater is fixed on the upper furnace body by top electrode and central copper electrode, the lower end of described top electrode and described central heater are affixed, and top thermofin and affixed with the lower end of described central copper electrode is passed in its upper end; Described central copper electrode is packed on the described upper furnace body, and its upper end tie cable; The inwall of described central heater is provided with thermo detector, is used for Temperature Feedback with the middle part warm area to programmable logic controller; Described programmable logic controller is used for the heat-up time of control center's well heater.
3. polycrystalline silicon ingot or purifying furnace as claimed in claim 2 is characterized in that, the centre portions of described cable and described central copper electrode leads to pure water.
4. polycrystalline silicon ingot or purifying furnace as claimed in claim 2 is characterized in that, described central copper electrode and described top electrode are threaded connection.
5. polycrystalline silicon ingot or purifying furnace as claimed in claim 2 is characterized in that, described top electrode is fixedly connected with described central heater with the graphite nut by the graphite screw rod.
6. such as each described polycrystalline silicon ingot or purifying furnace of claim 2 to 5, it is characterized in that, be provided with ceramic gasket between described top electrode and the described top thermofin.
7. such as each described polycrystalline silicon ingot or purifying furnace of claim 2 to 5, it is characterized in that, be provided with insulation layer between described central copper electrode and the described upper furnace body.
8. such as each described polycrystalline silicon ingot or purifying furnace of claim 2 to 5, it is characterized in that, described central heater has hollow cylindrical structure.
9. a crucible that is used for polycrystalline silicon ingot or purifying furnace is characterized in that, the centre of described crucible is provided with through hole, is used for the central heater of placing described polycrystalline silicon ingot or purifying furnace.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103243386A (en) * | 2013-05-23 | 2013-08-14 | 天津英利新能源有限公司 | Polysilicon ingot-casting furnace system |
| CN103397377A (en) * | 2013-07-25 | 2013-11-20 | 青岛隆盛晶硅科技有限公司 | Uniform polycrystalline silicon crystal growing technology and ingot furnace thermal field heating device thereof |
| CN103952759A (en) * | 2014-05-09 | 2014-07-30 | 淮安红相光电科技有限公司 | Method and device for preparing calcium fluoride crystal by using a method of declining crucible with built-in heating body |
| CN105603516A (en) * | 2016-03-14 | 2016-05-25 | 常州兆晶光能有限公司 | Heat cycling system of polycrystalline silicon ingot furnace |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN103397377B (en) * | 2013-07-25 | 2016-03-30 | 青岛隆盛晶硅科技有限公司 | The long brilliant technique of Uniform polycrystalline silicon and ingot furnace thermal field heating unit thereof |
| CN103952759A (en) * | 2014-05-09 | 2014-07-30 | 淮安红相光电科技有限公司 | Method and device for preparing calcium fluoride crystal by using a method of declining crucible with built-in heating body |
| CN103952759B (en) * | 2014-05-09 | 2016-05-25 | 淮安红相光电科技有限公司 | The built-in Bridgman-Stockbarger method of calandria is prepared method and the device of calcium fluoride crystal |
| CN105603516A (en) * | 2016-03-14 | 2016-05-25 | 常州兆晶光能有限公司 | Heat cycling system of polycrystalline silicon ingot furnace |
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| CN102912414B (en) | 2015-11-25 |
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