CN203530491U - Polycrystalline silicon ingot casting device - Google Patents
Polycrystalline silicon ingot casting device Download PDFInfo
- Publication number
- CN203530491U CN203530491U CN201320715344.1U CN201320715344U CN203530491U CN 203530491 U CN203530491 U CN 203530491U CN 201320715344 U CN201320715344 U CN 201320715344U CN 203530491 U CN203530491 U CN 203530491U
- Authority
- CN
- China
- Prior art keywords
- crucible
- heater
- polycrystalline silicon
- ingot casting
- casting device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses a polycrystalline silicon ingot casting device which is capable of improving product pass percent. The polycrystalline silicon ingot casting device comprises a furnace body, wherein the furnace body is internally provided with a lower support heat preservation plate and a heat preservation cover; a heat preservation insulating cage is formed by the heat preservation cover and the lower support heat preservation plate together; lifting rods are connected onto the heat preservation cover; the heat preservation insulating cage is internally provided with crucibles, crucible protecting plates, a graphite bottom plate, a graphite cover plate, side heaters, top heaters and a heat exchange platform; an overflowing blanket is mounted at the bottom of the furnace body; overflowing wires are mounted on the upper surface of the overflowing blanket; overflowing wires are arranged between adjacent graphite columns; carbon felts are arranged between the crucibles and the crucible protecting plates. Heat of the side heaters firstly permeates the crucible protecting plates and subsequently permeates the carbon felts to be conducted to the crucibles, so that the crucibles can be uniformly heated, the melting rate of a silicon material inside the crucibles is uniform, the finally cast ingots are high in pass percent, and the product pass percent is improved. The polycrystalline silicon ingot casting device is applicable to popularization and application in the field of polycrystalline silicon production equipment.
Description
Technical field
The utility model relates to production of polysilicon apparatus field, especially a kind of polycrystalline silicon ingot casting device.
Background technology
Solar cell can be electric energy by transform light energy, is an emphasis of modern Energy-saving Society development.According to the difference of body material, existing solar cell is divided into polysilicon solar cell, monocrystaline silicon solar cell and class monocrystaline silicon solar cell.Wherein, the transformation efficiency of monocrystaline silicon solar cell is high, but production cost is also high, the transformation efficiency of polysilicon solar cell is than the low 1%-2% of monocrystaline silicon solar cell, but its production cost is also low, and class monocrystaline silicon solar cell is the battery between monocrystalline silicon battery and polysilicon solar cell.Consider, solar cell in the market still be take polysilicon solar cell as main.
The existing polycrystal silicon ingot for the production of polysilicon solar cell adopts casting ingot process system conventionally, casting ingot process is generally realized by polycrystalline silicon ingot casting device, existing polycrystalline silicon ingot casting device comprises, comprise body of heater, on body of heater, be provided with aspirating hole, in described body of heater, be provided with subiculum warming plate and stay-warm case, stay-warm case is placed on subiculum warming plate, stay-warm case and subiculum warming plate form heat insulating cage jointly, on described stay-warm case, be connected with the elevating lever that can make stay-warm case move up and down, in described heat insulating cage, be provided with crucible, crucible guard boards, graphite base plate, graphite cover plate, sidepiece well heater, top heater, heat exchange platform, described graphite base plate is placed on heat exchange platform, crucible is placed on graphite base plate, crucible guard boards is arranged on crucible outside, sidepiece well heater is arranged on the outside of crucible guard boards, graphite cover plate is arranged on crucible top, top heater is arranged on graphite cover plate top, described heat exchange platform is fixed on bottom of furnace body by graphite column, the upper end of crucible guard boards is provided with exhaust emissions hole, also comprise inlet pipe, described inlet pipe is successively through body of heater, stay-warm case, top heater, after graphite cover plate, stretch in crucible, described bottom of furnace body is provided with overflow blanket, the upper surface of described overflow blanket is provided with overflow silk.
Current casting ingot process, is first after spraying-stocking process, then enters ingot casting operation.
Spraying: can react with crucible after silicon material high temperature melting, introduce impurity, and cause sticky pot, affect the quality of silicon ingot, so need to spray one deck silicon nitride solution between crucible and silicon material, utilize silicon nitride can effectively isolate silicon material and crucible, after silicon nitride solution spraying completes, carry out hyperthermia drying, the moisture evaporation by silicon nitride solution, just can make crucible inwall adhere to one deck silicon nitride coating again.
Charging: after crucible is dried, by fragmentary silicon material, in order, requirement and weight packs silicon material in crucible into.
The crucible of charged just can carry out next step casting ingot process, first charged crucible is packed in the body of heater of ingot furnace, after installing on request, by ingot furnace closing lid, the ingot furnace that closing lid is later, just forms the chamber of a sealing, the sealed crucible that installs silicon material is inner at ingot furnace, the casting ingot process that brings into operation, whole casting ingot process divides 6 processes, vacuumizes-heats-melt-grow brilliant-annealing-cooling.
S11, vacuumize: the air in body of heater is taken away from aspirating hole, and airborne oxygen and silicon material generation oxidizing reaction in the process that prevents from heating up, affect silicon ingot quality.Vacuumizing is to utilize vacuum pump that the air in body of heater is extracted out, until reach opening of device requirement.
S12, heating: after having vacuumized, enter the heating phase, heating is to approach temperature of fusion in order to make fast silicon material heat up, now the environment in furnace chamber is vacuum environment, can be conducive to, by being attached to the water vapour on silicon material surface, by the method vacuumizing, extract out, and be rapidly heated.
S13, fusing: in melting process, need in the chamber of sealing, fill argon gas, avoid being attached to the silicon nitride coating generation decomposition reaction of crucible inwall, argon gas is to be filled with in body of heater by inlet pipe.After fusing starts, in body of heater, start inflation, by processing sequence, be inflated to after specified pressure, start dynamically to keep.
S14, long brilliant: the silicon material having melted, start long crystalline substance, long brilliant process is to rising by the stay-warm case of body of heater inside, liquid-state silicon starts heat radiation from bottom, the liquid-state silicon of bottom becomes solid state si, and be accompanied by the rising of stay-warm case and scattering and disappearing of heat, slowly upwards solidify, until whole silicon ingot has solidified.
S15, annealing: because long brilliant process starts in bottom, and follow stay-warm case to rise, until top, push up like this because the reason of heat radiation at the end, will exist must temperature head, produces internal stress.The effect of annealing is exactly to guarantee, under isoperibol, to eliminate temperature head, thereby eliminates internal stress.
S16, cooling: quick cooling silicon ingot is to tapping temperature in furnace chamber.
Existing polycrystalline silicon ingot casting device in use, there is following problem: because the heat of sidepiece well heater passes to crucible through crucible guard boards, but because the radiating surface of sidepiece well heater and the area ratio of crucible guard boards are not 1:1, this just causes sidepiece well heater transferring heat to have inhomogeneous situation, crucible is heated inhomogeneous, thereby cause the silicon material burn-off rate in crucible inconsistent, easily cause the last ingot casting forming not reach specified requirement, the qualification rate of product is lower.
Utility model content
Technical problem to be solved in the utility model is to provide a kind of polycrystalline silicon ingot casting device that can improve conforming product rate.
The utility model solves the technical scheme that its technical problem adopts: this polycrystalline silicon ingot casting device, comprise body of heater, on body of heater, be provided with aspirating hole, in described body of heater, be provided with subiculum warming plate and stay-warm case, stay-warm case is placed on subiculum warming plate, stay-warm case and subiculum warming plate form heat insulating cage jointly, on described stay-warm case, be connected with the elevating lever that can make stay-warm case move up and down, in described heat insulating cage, be provided with crucible, crucible guard boards, graphite base plate, graphite cover plate, sidepiece well heater, top heater, heat exchange platform, described graphite base plate is placed on heat exchange platform, crucible is placed on graphite base plate, crucible guard boards is arranged on crucible outside, sidepiece well heater is arranged on the outside of crucible guard boards, graphite cover plate is arranged on crucible top, top heater is arranged on graphite cover plate top, described heat exchange platform is fixed on bottom of furnace body by graphite column, the upper end of crucible guard boards is provided with exhaust emissions hole, also comprise inlet pipe, described inlet pipe is successively through body of heater, stay-warm case, top heater, after graphite cover plate, stretch in crucible, described bottom of furnace body is provided with overflow blanket, the upper surface of described overflow blanket is provided with overflow silk, between described crucible and crucible guard boards, be provided with carbon felt.
Further, the thickness of described carbon felt is 10mm～20mm.
Further, the thickness of described carbon felt is 15mm.
Further, described exhaust emissions hole is circular hole.
Further, described crucible guard boards comprises upper guard board and lower backplate, and upper guard board and lower backplate are stitched together, and the height of upper guard board is 3～4 times of lower backplate height.
Further, the upper surface of described lower backplate is provided with groove, is provided with the projection matching with groove in the lower surface of upper guard board.
The beneficial effects of the utility model are: by be provided with carbon felt between crucible and crucible guard boards, the heat of sidepiece well heater passes to crucible through carbon felt after first seeing through crucible guard boards again, because carbon felt has good heat preservation and insulation, therefore, heat can not see through fast carbon felt and be delivered in crucible, can make like this heat when seeing through carbon felt, obtain homogenizing, thereby crucible is heated evenly, guarantee that the silicon material burn-off rate in crucible is consistent, the ingot casting qualification rate finally forming is higher, can greatly improve the qualification rate of product.
Accompanying drawing explanation
Fig. 1 is the structural representation of the utility model polycrystalline silicon ingot casting device;
Fig. 2 is the structural representation of overflow blanket described in the utility model;
Fig. 3 is the structural representation of crucible guard boards described in the utility model;
In figure, be labeled as: body of heater 1, aspirating hole 2, subiculum warming plate 3, stay-warm case 4, elevating lever 5, crucible 6, crucible guard boards 7, upper guard board 71, lower backplate 72, graphite base plate 8, graphite cover plate 9, sidepiece well heater 10, top heater 11, heat exchange platform 12, exhaust emissions hole 13, inlet pipe 14, overflow blanket 18, overflow silk 19, carbon felt 21, graphite column 22.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further illustrated.
As Fig. 1, 2, shown in 3, this polycrystalline silicon ingot casting device, comprise body of heater 1, on body of heater 1, be provided with aspirating hole 2, in described body of heater 1, be provided with subiculum warming plate 3 and stay-warm case 4, stay-warm case 4 is placed on subiculum warming plate 3, stay-warm case 4 and the common formation heat insulating of subiculum warming plate 3 cage, on described stay-warm case 4, be connected with the elevating lever 5 that can make stay-warm case 4 move up and down, in described heat insulating cage, be provided with crucible 6, crucible guard boards 7, graphite base plate 8, graphite cover plate 9, sidepiece well heater 10, top heater 11, heat exchange platform 12, described graphite base plate 8 is placed on heat exchange platform 12, crucible 6 is placed on graphite base plate 8, crucible guard boards 7 is arranged on crucible 6 outsides, sidepiece well heater 10 is arranged on the outside of crucible guard boards 7, graphite cover plate 9 is arranged on crucible 6 tops, top heater 11 is arranged on graphite cover plate 9 tops, described heat exchange platform 12 is fixed on body of heater 1 bottom by graphite column 22, the upper end of crucible guard boards 7 is provided with exhaust emissions hole 13, also comprise inlet pipe 14, described inlet pipe 14 is successively through body of heater 1, stay-warm case 4, top heater 11, after graphite cover plate 9, stretch in crucible 6, described body of heater 1 bottom is provided with overflow blanket 18, the upper surface of described overflow blanket 18 is provided with overflow silk 19, between described crucible 6 and crucible guard boards 7, be provided with carbon felt 21.By be provided with carbon felt 21 between crucible 6 and crucible guard boards 7, the heat of sidepiece well heater 10 passes to crucible 6 through carbon felt 21 after seeing through crucible guard boards 7 again, because carbon felt 21 has good heat preservation and insulation, therefore, heat can not see through fast carbon felt 21 and be delivered in crucible 6, can make like this heat when seeing through carbon felt 21, obtain homogenizing, guarantees that the silicon material burn-off rate in crucible 6 is consistent, the ingot casting qualification rate finally forming is higher, can greatly improve the qualification rate of product.
For crucible 6 is heated, more evenly can not impact the heating of crucible 6 again, the thickness of described carbon felt 21 is preferably 10mm～20mm simultaneously.Guaranteeing that under the prerequisite that crucible 6 is heated evenly, that tries one's best is cost-saving, the thickness of described carbon felt 21 is 15mm.
In order to be better conducive to the volatilization of impurity, described exhaust emissions hole 13 is circular hole, original exhaust emissions hole 13 is square slotted eye, when tail gas is discharged from square slotted eye, the air flow line of tail gas is more at random, irregular, be unfavorable for the volatilization of impurity, changed into after circular hole, can make the air flow line of tail gas regular, thereby be conducive to the volatilization of impurity.
In addition, when utilizing polycrystalline silicon ingot casting device partly to melt processes, heat insulating cage does not need sealing, gapped between stay-warm case 5 and subiculum warming plate 3, be convenient to heat radiation, but it is brilliant to lay in crucible 6 bottoms a straton, and when silicon material is carried out to heat fused, sub-crystalline substance need remain on and partly melt state, this just need to carry out strict accurate control to well heater and could realize, very difficulty operates, be easy to make sub brilliant excessive melting, the utility model improves crucible guard boards 7, can effectively avoid son brilliant in excessive melting, be that described crucible guard boards 7 comprises upper guard board 71 and lower backplate 72, upper guard board 71 is stitched together with lower backplate 72, because upper guard board 71 and lower backplate 72 are stitched together, therefore, between upper guard board 71 and lower backplate 72, there is splicing gap, and make to splice the just in time division surface with silicon material in son crystalline substance of gap, the heat of crucible 6 bottoms can lose fast through splicing gap like this, thereby avoid son brilliant in excessive melting, sub-crystalline substance is remained on and partly melt state.
For the ease of upper guard board 71 and lower backplate 72 are stitched together, the upper surface of described lower backplate 72 is provided with groove, is provided with the projection matching with groove in the lower surface of upper guard board 71.When splicing, only the projection being arranged on upper guard board 71 need be put into the groove arranging on lower backplate 72, operation is very easy.
Claims (6)
1. a polycrystalline silicon ingot casting device, comprise body of heater (1), on body of heater (1), be provided with aspirating hole (2), in described body of heater (1), be provided with subiculum warming plate (3) and stay-warm case (4), stay-warm case (4) is placed on subiculum warming plate (3), stay-warm case (4) forms heat insulating cage jointly with subiculum warming plate (3), on described stay-warm case (4), be connected with the elevating lever (5) that can make stay-warm case (4) move up and down, in described heat insulating cage, be provided with crucible (6), crucible guard boards (7), graphite base plate (8), graphite cover plate (9), sidepiece well heater (10), top heater (11), heat exchange platform (12), described graphite base plate (8) is placed on heat exchange platform (12), crucible (6) is placed on graphite base plate (8), crucible guard boards (7) is arranged on crucible (6) outside, sidepiece well heater (10) is arranged on the outside of crucible guard boards (7), graphite cover plate (9) is arranged on crucible (6) top, top heater (11) is arranged on graphite cover plate (9) top, described heat exchange platform (12) is fixed on body of heater (1) bottom by graphite column (22), the upper end of crucible guard boards (7) is provided with exhaust emissions hole (13), also comprise inlet pipe (14), described inlet pipe (14) is successively through body of heater (1), stay-warm case (4), top heater (11), after graphite cover plate (9), stretch in crucible (6), described body of heater (1) bottom is provided with overflow blanket (18), the upper surface of described overflow blanket (18) is provided with overflow silk (19), it is characterized in that: between described crucible (6) and crucible guard boards (7), be provided with carbon felt (21).
2. polycrystalline silicon ingot casting device as claimed in claim 1, is characterized in that: the thickness of described carbon felt (21) is 10mm～20mm.
3. polycrystalline silicon ingot casting device as claimed in claim 2, is characterized in that: the thickness of described carbon felt (21) is 15mm.
4. polycrystalline silicon ingot casting device as claimed in claim 3, is characterized in that: described exhaust emissions hole (13) is circular hole.
5. polycrystalline silicon ingot casting device as claimed in claim 4, is characterized in that: described crucible guard boards (7) comprises upper guard board (71) and lower backplate (72), and upper guard board (71) is stitched together with lower backplate (72).
6. polycrystalline silicon ingot casting device as claimed in claim 5, is characterized in that: the upper surface of described lower backplate (72) is provided with groove, in the lower surface of upper guard board (71), is provided with the projection matching with groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320715344.1U CN203530491U (en) | 2013-11-14 | 2013-11-14 | Polycrystalline silicon ingot casting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320715344.1U CN203530491U (en) | 2013-11-14 | 2013-11-14 | Polycrystalline silicon ingot casting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203530491U true CN203530491U (en) | 2014-04-09 |
Family
ID=50416721
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320715344.1U Expired - Fee Related CN203530491U (en) | 2013-11-14 | 2013-11-14 | Polycrystalline silicon ingot casting device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203530491U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109082706A (en) * | 2018-10-30 | 2018-12-25 | 浙江羿阳太阳能科技有限公司 | Energy-saving polysilicon ingot casting device |
| CN109097830A (en) * | 2018-10-30 | 2018-12-28 | 浙江羿阳太阳能科技有限公司 | Polycrystalline silicon ingot casting energy saving furnace |
-
2013
- 2013-11-14 CN CN201320715344.1U patent/CN203530491U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109082706A (en) * | 2018-10-30 | 2018-12-25 | 浙江羿阳太阳能科技有限公司 | Energy-saving polysilicon ingot casting device |
| CN109097830A (en) * | 2018-10-30 | 2018-12-28 | 浙江羿阳太阳能科技有限公司 | Polycrystalline silicon ingot casting energy saving furnace |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102992327B (en) | Method and equipment for purifying polycrystalline silicon through solidification crucible rotary electron beam melting | |
| CN103541003A (en) | Polysilicon ingot furnace | |
| CN103938270B (en) | Growth method of gallium heavily doped low-dislocation germanium single crystal | |
| CN203530495U (en) | Polycrystalline silicon ingot casting device | |
| CN103510157B (en) | A kind of long brilliant technique of induction of efficient ingot casting | |
| CN103215633B (en) | A kind of casting ingot method of polysilicon | |
| CN102162125B (en) | Thermal field structure of polysilicon ingot casting furnace | |
| CN103556220A (en) | Polycrystalline silicon ingot furnace | |
| CN203530488U (en) | Polycrystalline silicon ingot furnace | |
| KR20110120617A (en) | A high-throughput apparatus for manufacturing silicon ingots for the polycrystalline silicon solar cell | |
| CN103849928A (en) | Multiple-piece guided mode method growth technology for sapphire wafer | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN203530491U (en) | Polycrystalline silicon ingot casting device | |
| CN202968137U (en) | Equipment for smelting and purifying polycrystalline silicon by utilizing solidification crucible and rotary type electron beam | |
| CN203530496U (en) | Polycrystalline silicon ingot casting device | |
| CN103014853A (en) | Polysilicon ingot casting device and ingot casting method | |
| CN205188478U (en) | Polysilicon ingot furnace | |
| CN203530486U (en) | Polycrystalline silicon ingot furnace thermal field structure | |
| CN203530493U (en) | Polycrystalline silicon ingot furnace | |
| CN203530492U (en) | Polycrystalline silicon ingot casting furnace | |
| CN203530489U (en) | Polycrystalline silicon ingot furnace thermal field structure | |
| CN102912414B (en) | A kind of polycrystalline silicon ingot or purifying furnace and crucible thereof | |
| CN203530476U (en) | Polycrystalline silicon ingot casting device | |
| CN203530487U (en) | Polycrystalline silicon ingot casting thermal field structure | |
| CN203530490U (en) | Polycrystalline silicon ingot furnace thermal field structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140409 Termination date: 20211114 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |