CN103243386A - Polysilicon ingot-casting furnace system - Google Patents
Polysilicon ingot-casting furnace system Download PDFInfo
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- CN103243386A CN103243386A CN2013101958460A CN201310195846A CN103243386A CN 103243386 A CN103243386 A CN 103243386A CN 2013101958460 A CN2013101958460 A CN 2013101958460A CN 201310195846 A CN201310195846 A CN 201310195846A CN 103243386 A CN103243386 A CN 103243386A
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Abstract
The invention discloses a polysilicon ingot-casting furnace system which comprises an ingot-casting furnace (1), wherein a crucible (4) is arranged in the furnace chamber of the ingot-casting furnace (1); a heat-insulating cage (2) is arranged between the crucible (4) and the ingot-casting furnace (1); a heater (3) surrounding the crucible (4) is also arranged in the heat-insulating cage (2); and spacing between the inner side wall of the crucible (4) and the inner side wall of the ingot-casting furnace (1) is uniform always. According to the polysilicon ingot-casting furnace system, since the spacing between the inner side wall of the crucible (4) for containing a silicon ingot and the inner side wall of the ingot-casting furnace (1) is uniform always, so that the uniform heat dissipation around the wall of the crucible (4) is achieved, i.e., the temperature difference at the transverse temperature is avoided; and thus the wall of the silicon ingot coming into contact with the inner side wall of the crucible (4) is heated uniformly, i.e., the arrangement of the transverse temperature of the silicon ingot is uniform and consistent. Therefore, the transverse temperature gradient of the silicon ingot is improved; and a crystal can only grow in the longitudinal direction. As a result, the crystal defect inside the silicon ingot is decreased; and the battery conversion efficiency is improved.
Description
Technical field
The present invention relates to field of polysilicon technology, particularly relate to a kind of polycrystalline silicon ingot casting furnace system.
Background technology
The master operation of polycrystalline silicon ingot casting comprises that spraying, charging, ingot furnace and silico briquette detect four steps, wherein, the ingot furnace operation is the silicon material that the installs ingot furnace of packing into, through vacuumizing, heat, melt, long crystalline substance, annealing, cooling, silicon ingot unload several steps and be cast as standard compliant polycrystal silicon ingot.
Please refer to Fig. 1, Fig. 1 is the local structure synoptic diagram in a kind of typical polycrystalline silicon ingot casting furnace system in the prior art; Fig. 2 is the A-A direction structure synoptic diagram of Fig. 1.
Ingot furnace operation major parts comprises ingot furnace 1 ' and is arranged at parts such as the crucible 4 ' of ingot furnace 1 ' inside, heat-insulation cage 2 ' and well heater 3 ', heat-insulation cage 2 ' generally comprises heat-insulation cage sidepiece 21 ', heat-insulation cage bottom 22 ' and heat-insulation cage top 23 ', in the silicon ingot castingprocesses, the silicon material is heated to more than the fusing point under vacuum state, reach 1560 ℃ approximately, the silicon material is fused into liquid state gradually in the crucible 4 ' in this process.Begin to feed argon gas in the fusing later stage, (equipment component can cooperate some other measures slowly to open heat-insulation cage sidepiece 21 ' simultaneously.Inner heat passage up and down as baffle controls heat-insulation cage 2 ', bottom water-cooled copper dish, hollow DS piece 5 ' feed cooling gas etc.) realize long brilliant process.In this process, well heater 3 ' (general well heater 3 ' comprises well heater sidepiece 31 ' and well heater top 32 ' two portions) often also can continue crucible is heated, after finishing long brilliant process, temperature can progressively be down to about 1370 ℃ about in the furnace chamber, reach balanced to carry out the annealing of silicon ingot, remove the silicon ingot internal stress and reduce lattice defect, improve the silicon ingot quality to prevent that silicon ingot from cracking.After annealing was finished, silicon ingot was cooled to gradually about 400 ℃ in furnace chamber and comes out of the stove.
Wherein, the thermal field that is formed in the crucible 4 ' is one of important factor that influences the silicon ingot quality, and silicon ingot will reduce laterally or the growth of other directions as much as possible in the guiding lower edge longitudinal growth of thermal field when moulding.
But, its suffered cold of each position of crucible 4 ' inwall of the prior art is different, will cause crucible 4 ' each position heat radiation inhomogeneous like this, thereby will cause crucible 4 ' local overcooling, form the transverse temperature gradient, cause the silicon ingot crystal inside direction of growth disorderly and unsystematic, be unfavorable for the crystal vertical-growth, lattice defect is increased, influence battery conversion efficiency.
Therefore, how improving a kind of polycrystalline silicon ingot casting furnace system that is conducive to the silicon ingot longitudinal growth, is the present technical issues that need to address of those skilled in the art.
Summary of the invention
One object of the present invention aims to provide a kind of polycrystalline silicon ingot casting furnace system that is conducive to the silicon ingot longitudinal growth.
For achieving the above object, the invention provides and comprise ingot furnace, be provided with crucible in the furnace chamber of described ingot furnace, also be provided with heat-insulation cage between the furnace wall of described crucible and described ingot furnace, also be provided with the well heater around described crucible in the described heat-insulation cage, the inner side-wall of described crucible equates with spacing between the inner side-wall of described ingot furnace everywhere.
Preferably, the spacing between the inner side-wall of the inner side-wall of described well heater and described crucible equates everywhere.
Preferably, the inner side-wall of described heat-insulation cage equates with spacing between the described crucible inner side-wall everywhere.
Preferably, the inner side-wall of described ingot furnace surrounds cylindric, and it is cylindric that the inner chamber of described crucible also is.
Preferably, described well heater comprises some round tubes of arranging up and down, and each described round tube does not become cylindric.
Preferably, the sidewall of described well heater circumferentially is divided into two portions at least along it, connects by the graphite screw between the each several part.
Preferably, the sidewall of described heat-insulation cage is tightly connected between the each several part along circumferentially being divided into two portions at least.
Preferably, the jacking system that also comprises the sidewall oscilaltion of controlling described heat-insulation cage.
Preferably, comprise also at the diapire of described heat-insulation cage and the graphite orientation between the crucible and help grumeleuse that described crucible places described graphite orientation to help on the grumeleuse.
Distance equates between between crucible inner side-wall provided by the invention and the furnace chamber inner side-wall; Polycrystalline silicon ingot casting furnace system among the present invention is in the crystal growing process of casting ingot process, after opening heat-insulation cage, because the spacing between the inner side-wall of the inner side-wall of the crucible of splendid attire silicon ingot and ingot furnace equates everywhere, like this, the heat radiation of crucible perisporium is more even, on transverse temperature, there is not temperature head, the silicon ingot perisporium that contacts with the crucible inner side-wall is heated more even, the silicon ingot transverse temperature is arranged relatively uniformity, improved the transverse temperature gradient, be conducive to only growth longitudinally of crystal, reduce silicon ingot crystal inside defective, improved battery conversion efficiency.
In a kind of preferred embodiment, the inner side-wall of well heater equates with spacing between the crucible inner side-wall everywhere; Taken all factors into consideration the thermal field system of condenser system formation in well heater and the shaft like this to the influence of crucible wall, crucible wall is heated as far as possible evenly, the transverse temperature that reduces between the crucible wall is poor, and then weaken the transverse temperature difference of the silicon ingot that contacts with crucible wall, be conducive to the silicon ingot longitudinal growth, further improve the Forming Quality of polycrystal silicon ingot.
Description of drawings
Fig. 1 is the local structure synoptic diagram in a kind of typical polycrystalline silicon ingot casting furnace system in the prior art;
Fig. 2 is the A-A direction structure synoptic diagram of Fig. 1;
Fig. 3 is the structural representation of the cross section in the polycrystalline silicon ingot casting furnace system provided by the present invention;
Fig. 4 is the structural representation of crucible in the polycrystalline silicon ingot casting furnace system shown in Fig. 3;
The synoptic diagram of a kind of partitioning scheme of the silicon ingot produced in the polycrystalline silicon ingot casting furnace system that provides among the present invention is provided Fig. 5;
Fig. 6 is the side portion structure synoptic diagram of well heater shown in Fig. 3.
Wherein, the corresponding relation between Reference numeral and the component names is among Fig. 1 and Fig. 2:
1 ' ingot furnace; 2 ' heat-insulation cage; 21 ' heat-insulation cage sidepiece; 22 ' heat-insulation cage bottom; 23 ' heat-insulation cage top; 3 ' well heater; 31 ' well heater sidepiece; 32 ' well heater top; 4 ' crucible; 5 ' hollow DS.
Wherein, the corresponding relation between Reference numeral and the component names is among Fig. 3 to Fig. 6:
1 ingot furnace; 2 heat-insulation cages; 3 well heaters; 4 crucibles; Silicon ingot physical dimension among 40 the present invention; Silicon ingot physical dimension in 50 prior aries; Silicon ingot uses the border in 51 prior aries.
Embodiment
A core of the present invention aims to provide a kind of polycrystalline silicon ingot casting furnace system that is conducive to the silicon ingot longitudinal growth.
In order to make those skilled in the art person understand the present invention program better, the present invention is described in further detail with embodiment by reference to the accompanying drawings.
Please refer to Fig. 3, Fig. 3 is the structural representation of the cross section in the polycrystalline silicon ingot casting furnace system provided by the present invention.
The invention provides a kind of polycrystalline silicon ingot casting furnace system, comprise the ingot furnace 1 that is provided with condenser system in the shaft, also be provided with heat-insulation cage 2 between the furnace wall of crucible 4 and described ingot furnace 1, usually, the polycrystalline silicon ingot casting furnace system comprises that also the well heater 3 and the orientation that are arranged at heat-insulation cage 2 inside help grumeleuse, well heater 3 mainly plays silicon material in the crucible 4 is heated, effect with the material fusing of control silicon and crystal growth, according to the position difference is set, be divided into top, sidepiece and bottom three parts, it can be processed by high purity graphite spare; Heat-insulation cage 2 is crucible 4 and one deck insulating between the furnace chamber on every side, can be the carbon fiber material, is airtight cage structure after the closure, and the sidepiece liftable to be to realize the open and close state of heat-insulation cage 2, reaches the purpose of the long brilliant and heat radiation of control.
Crucible 4 in the furnace chamber of ingot furnace 1, crucible 4 has good temperature resistance, container as the silicon material, can prevent liquid-state silicon overflow under the high temperature, the main component of crucible 4 can be silicon-dioxide, also can have the novel material of above-mentioned characteristic for other, usually, be subjected to the influence of crucible 4 materials for fear of the silicon material, the inwall of silicon oxide crucibles 4 scribbles one deck silicon nitride usually.
Crucible 4 inner side-walls equate with spacing between the furnace chamber inner side-wall everywhere among the present invention; Polycrystalline silicon ingot casting furnace system among the present invention is in the crystal growing process of casting ingot process, after opening heat-insulation cage 2, because the distance between the inner side-wall of the inner side-wall of the crucible 4 of splendid attire silicon ingot and described ingot furnace 1 equates everywhere, like this, the heat radiation of crucible perisporium is more even, on transverse temperature, there is not temperature head, the silicon ingot perisporium that contacts with crucible 4 inwalls is heated more even, the silicon ingot transverse temperature is arranged relatively uniformity, improved the transverse temperature gradient, be conducive to only growth longitudinally of crystal, reduce silicon ingot crystal inside defective, improved battery conversion efficiency.
Wherein, in the silicon ingot process of growth, well heater 3 can keep working order always, descends gradually with a less gradient with the control temperature, therefore, can be further equate with distance between crucible 4 inner side-walls being arranged at the inner side-wall of the well heater 3 around the crucible 4 everywhere; Taken all factors into consideration the thermal field system of condenser system formation in well heater 3 and the shaft like this to the influence of crucible 4 sidewalls, crucible 4 sidewalls are heated as far as possible evenly, the transverse temperature that reduces between crucible 4 sidewalls is poor, and then weaken the transverse temperature difference of the silicon ingot that contacts with crucible 4 sidewalls, be conducive to the silicon ingot longitudinal growth, further improve the Forming Quality of polycrystal silicon ingot.
In the respective embodiments described above, the inner side-wall of heat-insulation cage 2 can further equate with distance between crucible 4 inner side-walls everywhere; When the silicon material is in the fusion stage, the thermal field of being made up of heat-insulation cage 2 and well heater 3 is heated to more than the fusing point of silicon material the silicon material in the crucible 4, make it be molten into liquid state, the silicon material that thermal field in this embodiment more is conducive in the crucible 4 is heated evenly, and when silicon ingot is in the brilliant process of length, the perisporium transverse distance with silicon ingot is all identical respectively for heat-insulation cage 2, furnace chamber inner side-wall in the thermal field of this embodiment, can better improve silicon ingot transverse temperature gradient.
Usually the furnace chamber of ingot furnace 1 is cylindrical-shaped structure in the prior art, therefore crucible 4, well heater 3, heat-insulation cage 2 can be carried out following design.
Please refer to Fig. 4, Fig. 6, Fig. 4 is the structural representation of crucible in the polycrystalline silicon ingot casting furnace system shown in Fig. 3; Fig. 6 is the side portion structure synoptic diagram of well heater shown in Fig. 3.
In a kind of concrete embodiment, the furnace chamber inner side-wall can surround cylindric, and it is cylindric that the inner chamber of crucible 4 also is, and the inner side-wall of corresponding well heater 3, heat-insulation cage 2 is also encircled a city cylindric; The inner side-wall of crucible 4, well heater 3 and heat-insulation cage 2 all is designed to cylindric, can changes few parts of trying one's best on the basis of existing technology, realize the uniform property adjusting of the suffered transverse temperature of silicon ingot.
In addition, under the certain prerequisite in ingot furnace 1 space, crucible 4 is processed into cylindrical-shaped structure, the moulding cross-sectional area of silicon ingot is circular, can obtain the shaping area bigger than other shape, come vivider description present embodiment advantage compared to existing technology with a following example.
Please refer to Fig. 5, the synoptic diagram of a kind of partitioning scheme of the silicon ingot produced in the polycrystalline silicon ingot casting furnace system that provides among the present invention is provided Fig. 5.
Be example with G6 silicon ingot (i.e. 36 block specifications), the silicon ingot size is about 1000mm*1000mm*343mm, cut into the silico briquette of 36 156mm*156mm*343mm, rim charge thickness is about 20mm-30mm, mark 50 is silicon ingot physical dimension in the prior art among Fig. 5, mark 51 is that silicon ingot uses the border in the prior art, and just the part that can cut into slices of G6 silicon ingot can be divided into 36 altogether; Mark 40 can cut 44 of silico briquettes altogether for silicon ingot physical dimension among the present invention.
So, under the situation of producing the same size silicon ingot, be that square silicon ingot is compared with moulding cross section in the prior art, the structure that in the present embodiment crucible 4 is designed to column can make silicon ingot increase production about 40 percent, and, because the height of the silicon ingot of producing is consistent, the brilliant speed of length that control comparatively approaches, basically can not increase on the whole ingot growth time, therefore on equipment capacity, will significantly increase, can decrease on the energy unit consumption yet.
And, two sides of 4 bight pieces are as can be seen from the figure arranged near crucible 4 in 36 silicon ingots of the prior art, face of 16 limit portion pieces is near crucible 4, the face of these close crucibles 4 is owing to be subjected to crucible 4 and the influence of the interior impurity of coating, aspect electrical property, compare relative relatively poorly with the middle part piece, directly influence battery performance; And the middle part silico briquette is 32 in 44 silicon ingots of present embodiment, and this zone silico briquette electrical property can not influenced by crucible 4 and coating substantially.Limit portion is 12 near the silico briquette of crucible 4, and accounting for whole ingot ratio is 12/44, is 27.3%, and 55.6% has significantly reduction in the more former scheme.
Certainly, the shape of cross section of ingot furnace 1 and crucible 4 also can be designed as ellipse or other smooth curve type in the polycrystalline silicon ingot casting furnace system, make crucible 4 place ingot furnace 1 after, the distance between the inner side-wall of the inner side-wall of crucible 4 and ingot furnace 1 equates.
Further, the sidewall of heat-insulation cage 2 is tightly connected between the each several part along circumferentially being divided into two portions at least, has provided the structure formation that heat-insulation cage 2 has the quartern among the figure; Divide the heat-insulation cage 2 of body structure can reduce the complete processing of heat-insulation cage 2, and be easy to assembling.
Polycrystalline silicon ingot casting furnace system in the various embodiments described above can also comprise that the diapire that is positioned at heat- insulation cage 2 and 4 graphite orientation of crucible help grumeleuse, and crucible 4 places the graphite orientation to help on the grumeleuse; The graphite orientation helps grumeleuse to have good heat conductivility.
The otherwise structure of polycrystalline silicon ingot casting furnace system can not given unnecessary details at this one by one with reference to prior art.
More than a kind of polycrystalline silicon ingot casting furnace system provided by the present invention is described in detail.Used specific case herein principle of the present invention and embodiment are set forth, the explanation of above embodiment just is used for helping to understand method of the present invention and core concept thereof.Should be pointed out that for those skilled in the art, under the prerequisite that does not break away from the principle of the invention, can also carry out some improvement and modification to the present invention, these improvement and modification also fall in the protection domain of claim of the present invention.
Claims (9)
1. polycrystalline silicon ingot casting furnace system, comprise ingot furnace (1), be provided with crucible (4) in the furnace chamber of described ingot furnace (1), also be provided with heat-insulation cage (2) between the furnace wall of described crucible (4) and described ingot furnace (1), also be provided with the well heater (3) around described crucible (4) in the described heat-insulation cage (2), it is characterized in that the inner side-wall of described crucible (4) equates with spacing between the inner side-wall of described ingot furnace (1) everywhere.
2. polycrystalline silicon ingot casting furnace system according to claim 1 is characterized in that, the inner side-wall of described well heater (3) equates with spacing between the inner side-wall of described crucible (4) everywhere.
3. polycrystalline silicon ingot casting furnace system according to claim 2 is characterized in that, the spacing between the inner side-wall of the inner side-wall of described heat-insulation cage (2) and described crucible (4) equates everywhere.
4. according to each described polycrystalline silicon ingot casting furnace system of claim 1 to 3, it is characterized in that the inner side-wall of described ingot furnace (1) surrounds cylindric, the inner chamber of described crucible (4) also is cylindric.
5. polycrystalline silicon ingot casting furnace system according to claim 4 is characterized in that, described well heater (3) comprises some column heater blocks that are arranged above and below, and each described column heater block surrounds cylindric jointly.
6. polycrystalline silicon ingot casting furnace system according to claim 4 is characterized in that, the sidewall of described well heater (3) circumferentially is divided into two portions at least along it, connects by the graphite screw between the each several part.
7. polycrystalline silicon ingot casting furnace system according to claim 4 is characterized in that, the sidewall of described heat-insulation cage (2) is tightly connected between the each several part along circumferentially being divided into two portions at least.
8. polycrystalline silicon ingot casting furnace system according to claim 4 is characterized in that, also comprises the jacking system of the sidewall oscilaltion of the described heat-insulation cage of control (2).
9. polycrystalline silicon ingot casting furnace system according to claim 4 is characterized in that, comprises that also the diapire that is positioned at described heat-insulation cage (2) and the graphite orientation between crucible they (4) help grumeleuse, and described crucible (4) places described graphite orientation to help on the grumeleuse.
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Cited By (3)
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| CN107326437A (en) * | 2017-08-25 | 2017-11-07 | 扬州荣德新能源科技有限公司 | polysilicon foundry furnace |
| CN108179466A (en) * | 2018-02-24 | 2018-06-19 | 常熟华融太阳能新型材料有限公司 | A kind of polycrystalline cast ingot crucible and device |
| CN109161962A (en) * | 2018-11-28 | 2019-01-08 | 扬州荣德新能源科技有限公司 | A kind of polycrystalline ingot furnace |
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Application publication date: 20130814 |