CN101774583A - Crucible device for polycrystalline silicon growth process - Google Patents
Crucible device for polycrystalline silicon growth process Download PDFInfo
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- CN101774583A CN101774583A CN200910131486A CN200910131486A CN101774583A CN 101774583 A CN101774583 A CN 101774583A CN 200910131486 A CN200910131486 A CN 200910131486A CN 200910131486 A CN200910131486 A CN 200910131486A CN 101774583 A CN101774583 A CN 101774583A
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Abstract
The invention belongs to a crucible device for a process of equipment for growing polycrystalline silicon by utilizing a directional solidification technology. The device is characterized in that a square high-purity graphite crucible is used for replacing the commonly used square high-purity quartz crucible; the square high-purity quartz crucible is formed by processing a whole graphite blank, and is assisted by relevant process designs (see figure); Si3N4, SiO/SiN or other materials are sprayed on the interior surface of the crucible and cured at high temperature. The square high-purity graphite crucible can be repetitively used in the polycrystalline silicon directional growth solidifying furnace, and then the producing cost of polycrystalline silicon ingots is greatly decreased, thereby reducing the silicon sheet price for the development of photovoltaic industry.
Description
Technical field
The invention belongs to a kind of technology crucible device in the directional solidification technique growing polycrystalline silicon equipment that utilizes.
Background technology
Traditional polysilicon directional freezing growth furnace crucible adopts square high-purity silica pot, and crucible is an expendable part, can not recirculation use, and promptly each stove polysilicon needs a crucible.When the preparation casting polycrystalline silicon, in the starting material fusing, in the crystalline silicon crystallisation process, silicon melt and quartz crucible Long contact time can produce viscous effect.Because both thermal expansivity differences cause crystalline silicon or quartz crucible to break when crystal cools off probably; And, can cause the corrosion of quartz crucible because silicon melt and quartz crucible Long contact time are the same with the preparation pulling of silicon single crystal, make that the oxygen concn in the polysilicon raises, thereby influence the silicon chip quality.Be head it off, general using Si3N4 on the technology, SiO/SiN or other materials are as coating, be attached to the inwall of quartz crucible, contact thereby isolate silicon melt and the direct of quartz crucible, solving viscous problem, and can reduce impurity concentrations such as oxygen in the polysilicon, carbon.Crucible adopts above way in the polycrystalline silicon casting ingot process at present, is a kind of technology of widespread usage, and shortcoming is crucible of a stove, and crucible is pure running stores, and the cost height is unfavorable for reducing the silicon chip cost.
Summary of the invention
By test, we adopt square high purity graphite crucible to substitute the square high-purity silica pot that adopts usually at present, the high purity graphite crucible adopts monoblock graphite blank to process, be aided with relevant technological design (seeing accompanying drawing), with carry out internal surface Si3N4, SiO/SiN or other materials spraying, form complete square high purity graphite crucible, can in polycrystalline growth technology, be repeatedly used, can reuse 40～50 stoves at present, reduce the use of high-purity silica pot, greatly reduced the growth cost of polycrystalline silicon ingot casting.
The high purity graphite crucible is because its heatproof height, and thermal conduction is good, has stronger rigidity at 600～1700 ℃, so be reasonable selection with the high purity graphite crucible as the heating container of polycrystalline silicon material.Because polycrystalline silicon material has stronger cold rising property, general silicon materials expand when solidifying can reach 9%.Calculate and check so will carry out intensity to graphite body, graphite wall will keep certain gradient to be beneficial to the expansion and the demoulding simultaneously.
In addition since polycrystalline silicon material if directly contact with the high purity graphite crucible, can be subjected to carbon oxygen contamination and metallic impurity and pollute, thereby influence the silicon chip quality, apply Si3N4 so when process implementing, use, SiO/SiN or other materials apply, and make molten silicon and plumbago crucible realize physical isolation.
Advantage of the present invention be by use carry out high purity graphite crucible that internal surface applies go forward side by side the line correlation technological design can reusable purpose to reach crucible, thereby reduce the polycrystalline silicon growth cost greatly.
Description of drawings
Accompanying drawing is a structural representation of the present invention.
Specific embodiments
As shown in drawings, size according to polysilicon directional freezing growth furnace institute growing silicon ingot, select the crucible of appropriate size to carry out technological design, select the large-scale blank of high purity graphite, carry out integral body processing and see accompanying drawing, plumbago crucible after the processing carries out the internal surface spraying, selects Si3N4, SiO/SiN or other materials.Crucible after the coating is put into special sintering furnace and is carried out high bake curing, before the blow-on of stand-by polysilicon directional freezing growth furnace, crucible is taken out from sintering oven, and check is after coated surface is as good as, and will pack polycrystalline silicon raw material and it is delivered to polycrystalline silicon oriented growth stove burner hearth in the crucible into.After a growth cycle finishes, take out crucible, keep somewhere the polysilicon silicon ingot behind the inverted curcible and remove crucible, send into next loop cycle and use.Crucible can be reused, thereby reduces polycrystal silicon ingot growth cost.
Claims (5)
1. technology crucible device in the polysilicon directional freezing growth furnace mainly is made up of coat in square, rectangle or the whole plumbago crucible of other shape, the crucible.
2. constitute by the described device of claim 1, it is characterized in that: described crucible material is high-purity or ordinary purity graphite, square, rectangle or the whole processing and fabricating of other shapes.
3. constitute by the described device of claim 1, and the crucible chamber body has 0～15 ° with interior gradient, in order to the demoulding and polycrystalline ingot casting condensation after.
4. described by claim 1, carry out undercoat protection in the crucible, adopt Si3N4, SiO/SiN or other materials is characterized in that only being sprayed at the internal surface of high purity graphite crucible
5. constitute by the described device of claim 1, and crucible can be repeatedly used in the ingot casting process.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910131486A CN101774583A (en) | 2009-04-01 | 2009-04-01 | Crucible device for polycrystalline silicon growth process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910131486A CN101774583A (en) | 2009-04-01 | 2009-04-01 | Crucible device for polycrystalline silicon growth process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101774583A true CN101774583A (en) | 2010-07-14 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910131486A Pending CN101774583A (en) | 2009-04-01 | 2009-04-01 | Crucible device for polycrystalline silicon growth process |
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| CN (1) | CN101774583A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102452837A (en) * | 2010-10-28 | 2012-05-16 | 上海普罗新能源有限公司 | Crucible for external refining for preparation of solar grade polysilicon as well as preparation method of crucible |
| CN102856145A (en) * | 2011-06-30 | 2013-01-02 | 东京毅力科创株式会社 | Method for manufacturing silicon part and silicon part for etching treatment device |
| CN102912414A (en) * | 2012-10-15 | 2013-02-06 | 天津英利新能源有限公司 | Polycrystalline silicon ingot production furnace and crucible thereof |
| CN103261493A (en) * | 2010-11-17 | 2013-08-21 | 思利科材料有限公司 | Apparatus and method for directional solidification of silicon |
| CN103266294A (en) * | 2013-03-07 | 2013-08-28 | 贵阳嘉瑜光电科技咨询中心 | Method of repeatedly using molybdenum crucible in HEM crystal growth |
| CN112707731A (en) * | 2019-10-25 | 2021-04-27 | 吉林市亨昌炭素集团有限责任公司 | Graphite crucible for purifying polycrystalline silicon |
| CN113526510A (en) * | 2021-08-17 | 2021-10-22 | 昆明学院 | Method for reducing radiation heat loss of polycrystalline silicon reduction furnace and application |
-
2009
- 2009-04-01 CN CN200910131486A patent/CN101774583A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102452837A (en) * | 2010-10-28 | 2012-05-16 | 上海普罗新能源有限公司 | Crucible for external refining for preparation of solar grade polysilicon as well as preparation method of crucible |
| CN103261493A (en) * | 2010-11-17 | 2013-08-21 | 思利科材料有限公司 | Apparatus and method for directional solidification of silicon |
| CN102856145A (en) * | 2011-06-30 | 2013-01-02 | 东京毅力科创株式会社 | Method for manufacturing silicon part and silicon part for etching treatment device |
| CN102912414A (en) * | 2012-10-15 | 2013-02-06 | 天津英利新能源有限公司 | Polycrystalline silicon ingot production furnace and crucible thereof |
| CN102912414B (en) * | 2012-10-15 | 2015-11-25 | 天津英利新能源有限公司 | A kind of polycrystalline silicon ingot or purifying furnace and crucible thereof |
| CN103266294A (en) * | 2013-03-07 | 2013-08-28 | 贵阳嘉瑜光电科技咨询中心 | Method of repeatedly using molybdenum crucible in HEM crystal growth |
| CN112707731A (en) * | 2019-10-25 | 2021-04-27 | 吉林市亨昌炭素集团有限责任公司 | Graphite crucible for purifying polycrystalline silicon |
| CN113526510A (en) * | 2021-08-17 | 2021-10-22 | 昆明学院 | Method for reducing radiation heat loss of polycrystalline silicon reduction furnace and application |
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Open date: 20100714 |