CN102858689A - 氧化铜纳米线的制备方法 - Google Patents

氧化铜纳米线的制备方法 Download PDF

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Publication number
CN102858689A
CN102858689A CN2010800658247A CN201080065824A CN102858689A CN 102858689 A CN102858689 A CN 102858689A CN 2010800658247 A CN2010800658247 A CN 2010800658247A CN 201080065824 A CN201080065824 A CN 201080065824A CN 102858689 A CN102858689 A CN 102858689A
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CN
China
Prior art keywords
preparation
cupric oxide
oxide nano
nano line
conductive layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800658247A
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English (en)
Inventor
周明杰
邵鹏睿
马文波
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oceans King Lighting Science and Technology Co Ltd
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Oceans King Lighting Science and Technology Co Ltd
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Publication date
Application filed by Oceans King Lighting Science and Technology Co Ltd filed Critical Oceans King Lighting Science and Technology Co Ltd
Publication of CN102858689A publication Critical patent/CN102858689A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G3/00—Compounds of copper
    • C01G3/02—Oxides; Hydroxides
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D5/00—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
    • B05D5/12—Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures to obtain a coating with specific electrical properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/06—Coating on selected surface areas, e.g. using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/16—Nanowires or nanorods, i.e. solid nanofibres with two nearly equal dimensions between 1-100 nanometer

Abstract

一种氧化铜纳米线的制备方法，其包括如下步骤：步骤一、在洁净的衬底上制备导电层作为电极，或者直接采用具有导电层的洁净衬底；步骤二，称取铜粉，然后把铜粉与有机载体均匀混合；步骤三、采用丝网印刷的方式将步骤二中配制好的混合物印刷在具有导电层的洁净衬底上；步骤四、把经过步骤三处理后的衬底在含有氧气的气氛中烧结，最后降温得到氧化铜纳米线。

Description

PCT国内申请，说明书已公开。

Claims (10)

  1. PCT国内申请，权利要求书已公开。
CN2010800658247A 2010-04-23 2010-04-23 氧化铜纳米线的制备方法 Pending CN102858689A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2010/072156 WO2011130923A1 (zh) 2010-04-23 2010-04-23 氧化铜纳米线的制备方法

Publications (1)

Publication Number Publication Date
CN102858689A true CN102858689A (zh) 2013-01-02

Family

ID=44833649

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800658247A Pending CN102858689A (zh) 2010-04-23 2010-04-23 氧化铜纳米线的制备方法

Country Status (5)

Country Link
US (1) US8852675B2 (zh)
EP (1) EP2562138B1 (zh)
JP (1) JP5619988B2 (zh)
CN (1) CN102858689A (zh)
WO (1) WO2011130923A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109108276A (zh) * 2017-06-23 2019-01-01 北京纳米能源与***研究所 纳米线电极材料及其制备方法和应用
CN109585238A (zh) * 2018-12-03 2019-04-05 深圳先进技术研究院 场致发射电极及其制备方法

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WO2004059682A1 (en) * 2002-12-26 2004-07-15 Seoul National University Industry Foundation Low-temperature formation method for emitter tip including copper oxide nanowire or copper oxide nanowire or copper nanowire and display device or light source having emitter tip manufactured using the same
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CN1843932A (zh) * 2006-03-03 2006-10-11 中山大学 一种氧化铜纳米线阵列定域生长方法
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CN101041469A (zh) * 2007-03-22 2007-09-26 武汉大学 一种一维金属氧化物纳米针材料的制备方法
US20090087567A1 (en) * 2007-10-02 2009-04-02 National Taiwan University Of Science And Technology Method of fabricating one-dimensional metallic nanostructure
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JP3363759B2 (ja) * 1997-11-07 2003-01-08 キヤノン株式会社 カーボンナノチューブデバイスおよびその製造方法
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TWI245079B (en) * 2002-12-30 2005-12-11 Ind Tech Res Inst Method for growing highly-ordered nanofibers
JP4278420B2 (ja) * 2003-04-11 2009-06-17 富士フイルム株式会社 金属化合物薄膜の形成方法および基板
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* Cited by examiner, † Cited by third party
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WO2004059682A1 (en) * 2002-12-26 2004-07-15 Seoul National University Industry Foundation Low-temperature formation method for emitter tip including copper oxide nanowire or copper oxide nanowire or copper nanowire and display device or light source having emitter tip manufactured using the same
CN1674192A (zh) * 2005-02-07 2005-09-28 中山大学 可印制的纳米材料冷阴极浆料及其场发射冷阴极的制备方法和应用
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109108276A (zh) * 2017-06-23 2019-01-01 北京纳米能源与***研究所 纳米线电极材料及其制备方法和应用
CN109585238A (zh) * 2018-12-03 2019-04-05 深圳先进技术研究院 场致发射电极及其制备方法

Also Published As

Publication number Publication date
JP5619988B2 (ja) 2014-11-05
US8852675B2 (en) 2014-10-07
EP2562138A1 (en) 2013-02-27
WO2011130923A1 (zh) 2011-10-27
JP2013530111A (ja) 2013-07-25
EP2562138B1 (en) 2014-08-06
US20130034652A1 (en) 2013-02-07
EP2562138A4 (en) 2013-10-23

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Application publication date: 20130102