CN102651425B - Method for manufacturing solar cell - Google Patents
Method for manufacturing solar cell Download PDFInfo
- Publication number
- CN102651425B CN102651425B CN201110050999.7A CN201110050999A CN102651425B CN 102651425 B CN102651425 B CN 102651425B CN 201110050999 A CN201110050999 A CN 201110050999A CN 102651425 B CN102651425 B CN 102651425B
- Authority
- CN
- China
- Prior art keywords
- passivation layer
- layer
- substrate
- doped layer
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for manufacturing a solar cell. The method comprises the following steps of: performing ion implantation on a first surface of a substrate to form a first doped layer; performing ion implantation on a second surface of the substrate to form a second doped layer; performing an annealing process on a structure formed by the substrate, the first doped layer and the second doped layer; forming a first passivation layer on the first doped layer and forming a second passivation layer on the second doped layer through the annealing process; forming a third passivation layer on the first passivation layer which is formed through the annealing process; forming a fourth passivation layer on the second passivation layer which is formed through the annealing process; and forming conductive electrodes on the third passivation layer and the fourth passivation layer respectively.
Description
Technical field
The invention relates to a kind of manufacture method of electrooptical device, and relate to a kind of manufacture method of solar cell especially.
Background technology
The doping way of conventional solar cell is for adopting diffusion process, and mixed by admixture to form p-n junction among substrate, this p-n junction produces the movement of electron hole pair in light situation, so in a substrate generation current to reach the object of opto-electronic conversion.Such as, if solar cell adopts p-type substrate, when the diffusion process of solar cell, p-type substrate is placed in high temperature furnace pipe and carries out N-shaped phosphorus diffusion process, to mix N-shaped admixture to p-type substrate.
But in high temperature phosphorous diffusion process, unnecessary phospho-silicate glass (Phospho-SilicateGlass can be formed, PSG), and after diffusion process, whole p-type substrate can be coated by one deck N-shaped admixture institute, and this N-shaped admixture may cause between solar cell positive and negative electrode and produce short circuit phenomenon.In order to remove the unnecessary phospho-silicate glass of substrate surface and avoid being short-circuited between positive and negative electrode phenomenon; usually also need to remove (Phospho-Silicate Glass Etching through phosphorus glass; PGE) phosphorus glass is removed by mode, and uses laser, plasma or chemical etching mode to carry out isolated (Edge Isolation) program in edge of substrate.
It can thus be appreciated that, after the substrate employing diffusion process of solar cell mixes required admixture, still need and additionally carry out, the complicated processes such as such as phosphorus glass removal and substrate edges are isolated.Therefore, the processing procedure of the doping way of conventional solar cell still has the space of improving and simplifying, and become an important topic.
Summary of the invention
An object of the present invention is a kind of method providing solar cell to manufacture, to solve problem comparatively complicated on known solar cells processing procedure.
One embodiment of the present invention is in the manufacture method providing a kind of solar cell, comprises step as follows: carry out ion cloth to the first surface of substrate and plant to form the first doped layer; Carry out ion cloth to the second surface of substrate to plant to form the second doped layer; Cycle of annealing is performed to the structure that substrate, the first doped layer and the second doped layer are formed, and by cycle of annealing formed the first passivation layer on the first doped layer with formation second passivation layer on the second doped layer; The 3rd passivation layer is formed on the first passivation layer formed after cycle of annealing; The 4th passivation layer is formed on the second passivation layer formed after cycle of annealing; And form conductive electrode respectively on the 3rd passivation layer and the 4th passivation layer.
According to one embodiment of the invention, be also contained in and carry out before ion cloth plants, utilizing etching mode that the first surface of substrate and second surface are done roughening process.
According to another embodiment of the present invention, wherein substrate is p-type substrate, and first surface is through and carries out ion cloth and implant N-shaped admixture, and second surface is through and carries out ion cloth and implant p+ type admixture.
According to further embodiment of this invention, wherein substrate is N-shaped substrate, and first surface is through and carries out ion cloth and plant implanting p-type admixture, and second surface is through and carries out ion cloth and implant n+ type admixture.
According to yet another embodiment of the invention, wherein the 3rd passivation layer and the 4th passivation layer are through a chemical vapour deposition (CVD) mode and are formed.
Another embodiment of the present invention is in the manufacture method providing a kind of solar cell, comprises step as follows: carry out ion cloth to the first surface of substrate and plant to form the first doped layer; Carry out ion cloth to the second surface of substrate to plant to form the second doped layer; Cycle of annealing is performed to the structure that substrate, the first doped layer and the second doped layer are formed, and by cycle of annealing formed the first passivation layer on the first doped layer with formation second passivation layer on the second doped layer; The 3rd passivation layer is formed on the first passivation layer formed after cycle of annealing; And form conductive electrode respectively on the 3rd passivation layer and the second passivation layer of being formed after cycle of annealing.
According to one embodiment of the invention, be also contained in and carry out before ion cloth plants, utilizing etching mode that the first surface of substrate is done roughening process.
According to another embodiment of the present invention, wherein substrate is p-type substrate, and first surface is through and carries out ion cloth and implant N-shaped admixture, and second surface is through and carries out ion cloth and implant p+ type admixture.
According to further embodiment of this invention, wherein substrate is N-shaped substrate, and first surface is through and carries out ion cloth and plant implanting p-type admixture, and second surface is through and carries out ion cloth and implant n+ type admixture.
According to yet another embodiment of the invention, wherein the 3rd passivation layer is through a chemical vapour deposition (CVD) mode and is formed.
Applying advantage of the present invention is utilizing the ion cloth mode of planting to implant required impurity, then after mixing impurity via cycle of annealing activation, can complete solar cell substrate dopping process.Above-mentioned ion cloth mode of planting also can be reduced in conventional solar cell substrate dopping process, such as, the step that removing phosphorus glass and substrate edges completely cut off, thus the processing procedure of doping is simplified, and after carrying out cycle of annealing that ion cloth plants and carrying out chemical vapour deposition (CVD) each self-forming passivation layer, and dual layer passivation Rotating fields can be obtained under less fabrication steps, the manufacture process of whole solar cell is simplified, and then accelerates production procedure.
Accompanying drawing explanation
For above and other objects of the present invention, feature, advantage and embodiment can be become apparent, appended the description of the drawings is as follows:
Figure 1A ~ Fig. 1 I is the structural representation of the solar cell Making programme illustrated according to an embodiment of the present invention;
Fig. 2 illustrates the method for manufacturing solar battery flow chart according to an embodiment of the present invention;
Fig. 3 A ~ Fig. 3 H is the structural representation of the solar cell Making programme illustrated according to another execution mode of the present invention;
Fig. 4 illustrates the method for manufacturing solar battery flow chart according to another execution mode of the present invention.
[primary clustering symbol description]
110: substrate 310: substrate
120: first surface 320: first surface
130: second surface 330: second surface
140: the first doped layer 340: the first doped layers
150: the second doped layer 350: the second doped layers
160: the first passivation layer 360: the first passivation layers
161: the three passivation layer 361: the three passivation layers
170: the second passivation layer 370: the second passivation layers
171: the four passivation layer 380: the first electrodes
180: the first electrode 390: the second electrodes
190: the second electrodes 391: back layer
210 ~ 280: step 410 ~ 470: step
Embodiment
Below and will describe in detail and clearly demonstrate spirit of the present invention with accompanying drawing, have in any art and usually know that the knowledgeable is after understanding preferred embodiment of the present invention, when by the technology of teachings of the present invention, can being changed and modifying, it does not depart from spirit of the present invention and scope.
Figure 1A ~ Fig. 1 I illustrates the structural representation of the solar cell Making programme according to an embodiment of the present invention, and Fig. 2 illustrates the method for manufacturing solar battery flow chart according to an embodiment of the present invention.Please refer to Figure 1A ~ Fig. 1 I and Fig. 2.
In step 210, utilize etching mode that the first surface 120 of the substrate 110 of Figure 1A is done roughening process (Textured Process) with second surface 130, and become structure as shown in Figure 1B.Above-mentioned first surface 120 and the roughening process of second surface 130 can be simultaneously or separate to be carried out, and more only can carry out the roughening process of first surface 120 or second surface 130 according to the demand in practical application.After above-mentioned roughening process, when being incident in this rough surface by light, produce scattering and multipath reflection, to provide longer light travel path, increase the number that photon enters substrate 110, and then form more electron hole.The etching mode of above-mentioned roughening process can be wet etching (Wet Etching) or dry etching method (Dry Etching).
In a step 220, ion cloth is carried out to the first surface 120 of substrate 110 and plants to form the first doped layer 140, refer to Fig. 1 C.Such as, when substrate 110 is p-type material, ion cloth is utilized to plant mode, N-shaped dopant ion is implanted the first surface 120 of substrate 110, make substrate 110 form the first doped layer 140 of N-shaped in the part near first surface 120, and form p-n junction between substrate 110 and the first doped layer 140.Similarly, when substrate 110 is N-shaped material, ion cloth is utilized to plant mode, p-type dopant ion is implanted the first surface 120 of substrate 110, make substrate 110 form the first doped layer 140 of p-type in the part near first surface 120, and form p-n junction between substrate 110 and the first doped layer 140.
In step 230, ion cloth is carried out to the second surface 130 of substrate 110 and plants to form the second doped layer 150, refer to Fig. 1 D.Such as, when substrate 110 is p-type material, ion cloth is utilized to plant mode, p+ type dopant ion is implanted the second surface 130 of substrate 110, make substrate 110 form the second doped layer 150 of p+ type in the part near second surface 130, and formed and the p-p+ junction of p-n junction symmetry in step 220 between substrate 110 and the second doped layer 150.Similarly, when substrate 110 is N-shaped material, ion cloth is utilized to plant mode, n+ type dopant ion is implanted the second surface 130 of substrate 110, make substrate 110 form the second doped layer 150 of n+ type in the part near second surface 130, and formed and the n-n+ junction of p-n junction symmetry in step 220 between substrate 110 and the second doped layer 150.
Then, in step 240, cycle of annealing is performed to the structure that substrate 110, first doped layer 140 and the second doped layer 150 are formed.The mode of annealing can be traditional furnace anneal or rapid thermal annealing (Rapid Thermal Annealing, RTA), it can activate implanted ion, and repairing ion cloth is planted caused cloth and planted damage (being also called that lattice disorders, Lattice Disorder).Therefore, the structure that aforesaid substrate 110, first doped layer 140 and the second doped layer 150 are formed is after performing cycle of annealing, its Doped ions can activate and the cloth of Doped ions is planted damage and is able to repaired, and reach the object of substrate 110 doping, and formed simultaneously the first passivation layer 160 on the first doped layer 140 with formation second passivation layer 170 on the second doped layer 150, refer to Fig. 1 E.Wherein, the first passivation layer 160 and the oxide layer (Oxide Layer) of the second passivation layer 170 for being formed on the first doped layer 140 and the second doped layer 150 after above-mentioned cycle of annealing.
Refer to Fig. 1 F, in step 250, on the first passivation layer 160 formed after cycle of annealing, form the 3rd passivation layer 161, make the first passivation layer 160 and the 3rd passivation layer 161 form dual layer passivation Rotating fields.Above-mentioned 3rd passivation layer 161 can pass through chemical vapour deposition (CVD) mode (such as: with plasma-assisted chemical depositional mode) and is formed, and the material of the 3rd passivation layer 161 can be nitride (Nitride) or oxide (Oxide), the formation of above-mentioned passivation layer can reduce incident light is entered the first doped layer 140 reflection by external environment, to increase the photoelectric conversion efficiency of solar cell.
Refer to Fig. 1 G, in step 260, on the second passivation layer 170 formed after cycle of annealing, form the 4th passivation layer 171, make the second passivation layer 170 and the 4th passivation layer 171 form dual layer passivation Rotating fields.The mode that above-mentioned 4th passivation layer 171 is formed is identical or similar with above-mentioned 3rd passivation layer 161, and the formation of above-mentioned passivation layer can reduce incident light is entered the second doped layer 150 reflection by external environment, to increase the photoelectric conversion efficiency of solar cell.
In step 270, form conductive electrode 180 and 190 respectively on the 3rd passivation layer 161 and the 4th passivation layer 171, refer to Fig. 1 H.Above-mentioned conductive electrode can utilize as screen painting (Screen Printing) or plating (Plating) mode are formed.For screen painting, its mode is printed on the 3rd passivation layer 161 by metal paste (such as: silver slurry) through the half tone of tool circuit pattern (Pattern) or metallic plate, through drying procedure, metal paste is hardened again, to form the first electrode 180.Then, metal paste is printed on the 4th passivation layer 171 according to aforesaid way, then through drying procedure, metal paste is hardened, to form the second electrode 190.So just complete the printing of the first electrode 180 and the second electrode 190 two kinds of conductive electrodes.It is noted that the order of above-mentioned formation first electrode 180 and the second electrode 190 can be exchanged mutually, be not limited with above-mentioned.
Step 280 continues the manufacture of above-mentioned conductive electrode 180 and 190, as shown in Figure 1 I, through high temperature sintering (Firing) program in this step, remove the organic principle of metal paste, and allow the first electrode 180 be penetrated the 3rd passivation layer 161 and the first passivation layer 160, and the top layer infiltrating the first doped layer 140 forms ohmic contact (Ohmic Contact), second electrode 190 is penetrated the 4th passivation layer 171 and the second passivation layer 170 simultaneously, and the top layer infiltrating the second doped layer 150 forms ohmic contact, the electric current making the first electrode 180 and the second electrode 190 be able to electron hole to produce is derived, and complete the fabrication schedule of double-sided solar battery.Therefore, above-mentioned double-sided solar battery is not increasing under fabrication schedule step, makes the two-sided of solar cell have dual layer passivation Rotating fields simultaneously.
Fig. 3 A ~ Fig. 3 H is the structural representation of the solar cell Making programme illustrated according to another execution mode of the present invention, and Fig. 4 illustrates the method for manufacturing solar battery flow chart according to another execution mode of the present invention.Please refer to Fig. 3 A ~ Fig. 3 H and Fig. 4.
In step 410, utilize etching mode that the first surface 320 of the substrate 310 of Fig. 3 A is done roughening process, and become structure as shown in Figure 3 B.The roughening process on aforesaid substrate surface 310 also can according to the demand in practical application, simultaneously or separately carry out first surface 320 and (or) the roughening process of second surface 330, and not to be limited with above-mentioned.After above-mentioned roughening process, when being incident in this rough surface by light, produce scattering and multipath reflection, to provide longer light travel path, increase the number that photon enters substrate 310, and then form more electron hole.The etching mode of above-mentioned roughening process can be wet etching or dry etching method.
At step 420 which, ion cloth is carried out to the first surface 320 of substrate 310 and plants to form the first doped layer 340, refer to Fig. 3 C.Such as, when substrate 310 is p-type material, ion cloth is utilized to plant mode, N-shaped dopant ion is implanted the first surface 320 of substrate 310, make substrate 310 form the first doped layer 340 of N-shaped in the part near first surface 320, and form p-n junction between substrate 310 and the first doped layer 340.Similarly, when substrate 310 is N-shaped material, ion cloth is utilized to plant mode, p-type dopant ion is implanted the first surface 320 of substrate 310, make substrate 310 form the first doped layer 340 of p-type in the part near first surface 320, and form p-n junction between substrate 310 and the first doped layer 340.
In step 430, ion cloth is carried out to the second surface 330 of substrate 310 and plants to form the second doped layer 350, refer to Fig. 3 D.Such as, when substrate 310 is p-type material, ion cloth is utilized to plant mode, p+ type dopant ion is implanted the second surface 330 of substrate 310, make substrate 310 form the second doped layer 350 of p+ type in the part near second surface 330, and formed and the p-p+ junction of p-n junction symmetry in step 420 between substrate 310 and the second doped layer 350.Similarly, when substrate 310 is N-shaped material, ion cloth is utilized to plant mode, n+ type dopant ion is implanted the second surface 330 of substrate 310, make substrate 310 form the second doped layer 350 of n+ type in the part near second surface 330, and formed and the n-n+ junction of p-n junction symmetry in step 420 between substrate 310 and the second doped layer 350.
Then, in step 440, cycle of annealing is performed to the structure that substrate 310, first doped layer 340 and the second doped layer 350 are formed.The mode of annealing can be traditional furnace anneal or rapid thermal annealing, and it can activate implanted ion, and repairing ion cloth is planted caused cloth and planted damage.Therefore, the structure that aforesaid substrate 310, first doped layer 340 and the second doped layer 350 are formed is after performing cycle of annealing, its Doped ions can activate and the cloth of Doped ions is planted damage and is able to repaired, and reach the object of substrate 310 doping, and formed simultaneously the first passivation layer 360 on the first doped layer 340 with formation second passivation layer 370 on the second doped layer 350, refer to Fig. 3 E.Wherein, the first passivation layer 360 and the oxide layer of the second passivation layer 370 for being formed on the first doped layer 340 and the second doped layer 350 after above-mentioned cycle of annealing.
Refer to Fig. 3 F, in step 450, on the first passivation layer 360 formed after cycle of annealing, form the 3rd passivation layer 361, make the first passivation layer 360 and the 3rd passivation layer 361 form dual layer passivation Rotating fields.Above-mentioned 3rd passivation layer 361 can pass through chemical vapour deposition (CVD) mode (such as: with plasma-assisted chemical depositional mode) and is formed, and the material of the 3rd passivation layer 361 can be nitride or oxide, the formation of above-mentioned passivation layer can reduce incident light is entered the first doped layer 340 reflection by external environment, to increase the photoelectric conversion efficiency of solar cell.
In step 460, formation conductive electrode 380 and 390 is in the 3rd passivation layer 361 with on the second passivation layer 370 formed after cycle of annealing respectively, refers to Fig. 3 G.Above-mentioned conductive electrode can utilize as screen painting or plating mode are formed.For screen painting, its mode is printed on the 3rd passivation layer 361 through the half tone of tool circuit pattern or metallic plate by metal paste (such as: silver slurry), then hardened by metal paste through drying procedure, to form the first electrode 380.Then, metal paste is printed on the second passivation layer 370 according to aforesaid way, then through drying procedure, metal paste is hardened, to form the second electrode 390.Then, then coat on whole second passivation layer 370 with metal material (such as: aluminium paste), then through drying procedure, metal material is hardened, to form back layer 391.So just complete the printing of the first electrode 380 and the second electrode 390 two kinds of conductive electrodes.It is noted that the order of above-mentioned formation first electrode 380 and the second electrode 390 can be exchanged mutually, be not limited with above-mentioned.
Step 470 continues the manufacture of above-mentioned conductive electrode 380 and 390, as shown in figure 3h, through high temperature sintering program in this step, remove the organic principle of metal paste, and allow the first electrode 380 be penetrated the 3rd passivation layer 361 and the first passivation layer 360, and the top layer infiltrating the first doped layer 340 forms ohmic contact, second electrode 390 is penetrated the second passivation layer 370 simultaneously, and the top layer infiltrating the second doped layer 350 forms ohmic contact, the electric current making the first electrode 380 and the second electrode 390 be able to electron hole to produce is derived, and complete the fabrication schedule of solar cell.Therefore, above-mentioned solar cell is not increasing under fabrication schedule step, makes solar cell have dual layer passivation Rotating fields.
Above-mentioned steps and accompanying drawing illustrate it is disclose feature description of the present invention to use, not detailed descriptionthe and the detail section depicting whole solar cell manufacturing process, step mentioned in the present embodiment, except chatting its order person bright especially, all can adjust its tandem according to actual needs, even can perform simultaneously or partly simultaneously, and not be limited with above-mentioned.
In sum, apply the present invention and there is the advantage simplifying solar cell processing procedure.The present invention utilizes the ion cloth mode of planting to implant required impurity, then after mixing impurity via cycle of annealing activation, can complete solar cell substrate dopping process.Above-mentioned ion cloth mode of planting more can be reduced in conventional solar cell substrate dopping process, such as, the step that removing phosphorus glass and substrate edges completely cut off, thus the processing procedure of doping is simplified, and after carrying out cycle of annealing that ion cloth plants and carrying out chemical vapour deposition (CVD) each self-forming passivation layer, and dual layer passivation Rotating fields can be obtained under less fabrication steps, the manufacture process of whole solar cell is simplified, and then accelerates production procedure.
Although the present invention discloses as above with execution mode; so itself and be not used to limit the present invention; anyly be familiar with this those skilled in the art; without departing from the spirit and scope of the present invention; when being used for a variety of modifications and variations, the scope that therefore protection scope of the present invention ought define depending on appending claims is as the criterion.
Claims (6)
1. a manufacture method for solar cell, is characterized in that, comprises:
Carry out ion cloth to a first surface of a substrate to plant, to form one first doped layer, this substrate is a N-shaped substrate;
Carry out ion cloth to a second surface of this substrate to plant, to form one second doped layer;
One cycle of annealing is performed to the structure that this substrate, this first doped layer and this second doped layer are formed, and by this cycle of annealing formed one first passivation layer on this first doped layer with formation one second passivation layer on this second doped layer;
Form one the 3rd passivation layer and form pair of lamina passivation layer structure on this first passivation layer formed after this cycle of annealing, wherein this first passivation layer and the 3rd passivation layer are oxide skin(coating), wherein form the 3rd passivation layer with plasma-assisted chemical depositional mode;
Form one the 4th passivation layer and form pair of lamina passivation layer structure on this second passivation layer formed after this cycle of annealing, wherein this second passivation layer and the 4th passivation layer are oxide skin(coating); And
Form one first conductive electrode respectively on the 3rd passivation layer and one second conductive electrode the 4th passivation layer,
Wherein, this first electrode penetrates the 3rd passivation layer and this first passivation layer, and the top layer infiltrating this first doped layer forms an ohmic contact, and this second electrode penetrates the 4th passivation layer and this second passivation layer, and the top layer infiltrating this second doped layer forms an ohmic contact.
2. the manufacture method of solar cell according to claim 1, is characterized in that, is also contained in and carries out before ion cloth plants, utilizing etching mode that this first surface of this substrate and this second surface are done roughening process.
3. the manufacture method of solar cell according to claim 1, is characterized in that, this first surface is through and carries out ion cloth and plant implanting p-type admixture, and this second surface is through and carries out ion cloth and implant n+ type admixture.
4. a manufacture method for solar cell, is characterized in that, comprises:
Carry out ion cloth to a first surface of a substrate to plant, to form one first doped layer, this substrate is a N-shaped substrate;
Carry out ion cloth to a second surface of this substrate to plant, to form one second doped layer;
One cycle of annealing is performed to the structure that this substrate, this first doped layer and this second doped layer are formed, and by this cycle of annealing formed one first passivation layer on this first doped layer with formation one second passivation layer on this second doped layer;
Form one the 3rd passivation layer on this first passivation layer formed after this cycle of annealing, wherein this first passivation layer and the 3rd passivation layer are oxide skin(coating), wherein form the 3rd passivation layer with plasma-assisted chemical depositional mode; And
Respectively formed one first conductive electrode on the 3rd passivation layer and one second conductive electrode on this second passivation layer formed after this cycle of annealing,
Wherein, this first electrode penetrates the 3rd passivation layer and this first passivation layer, and the top layer infiltrating this first doped layer forms an ohmic contact, and this second electrode penetrates this second passivation layer, and the top layer infiltrating this second doped layer forms an ohmic contact.
5. the manufacture method of solar cell according to claim 4, is characterized in that, is also contained in and carries out before ion cloth plants, utilizing etching mode that this first surface of this substrate is done roughening process.
6. the manufacture method of solar cell according to claim 4, is characterized in that, this first surface is through and carries out ion cloth and plant implanting p-type admixture, and this second surface is through and carries out ion cloth and implant n+ type admixture.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110050999.7A CN102651425B (en) | 2011-02-25 | 2011-02-25 | Method for manufacturing solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110050999.7A CN102651425B (en) | 2011-02-25 | 2011-02-25 | Method for manufacturing solar cell |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102651425A CN102651425A (en) | 2012-08-29 |
| CN102651425B true CN102651425B (en) | 2015-02-25 |
Family
ID=46693380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110050999.7A Expired - Fee Related CN102651425B (en) | 2011-02-25 | 2011-02-25 | Method for manufacturing solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102651425B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103985779A (en) * | 2013-02-08 | 2014-08-13 | 上海凯世通半导体有限公司 | Manufacturing method for solar energy battery, and solar energy battery |
| CN105702797A (en) * | 2014-11-27 | 2016-06-22 | 上海晶玺电子科技有限公司 | Manufacturing method of double-face battery |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
| CN101976711A (en) * | 2010-10-27 | 2011-02-16 | 晶澳太阳能有限公司 | Method for making solar batteries by adopting ion injection method |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1949450B1 (en) * | 2005-11-08 | 2015-01-21 | LG Electronics Inc. | Solar cell of high efficiency |
| CN101548392A (en) * | 2006-12-01 | 2009-09-30 | 夏普株式会社 | Solar cell and method for manufacturing the same |
| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
| CN101447528A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing antapex contact crystalline silicon solar cell by utilizing passivation on double surfaces and laser dotting |
-
2011
- 2011-02-25 CN CN201110050999.7A patent/CN102651425B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101692466A (en) * | 2009-09-17 | 2010-04-07 | 中电电气（南京）光伏有限公司 | Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique |
| CN101976711A (en) * | 2010-10-27 | 2011-02-16 | 晶澳太阳能有限公司 | Method for making solar batteries by adopting ion injection method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102651425A (en) | 2012-08-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102468365B (en) | Manufacturing method for double-face solar cell | |
| CN101950779B (en) | Method for preparing solar cell in situ | |
| US20150270421A1 (en) | Advanced Back Contact Solar Cells | |
| CN101339966A (en) | Post produced velvet production process of solar cell | |
| CN203071093U (en) | Back contact solar cell | |
| CN104362219B (en) | Crystalline solar cell production process | |
| CN103560168A (en) | Process for manufacturing PERC solar cell | |
| CN102651425B (en) | Method for manufacturing solar cell | |
| CN106784049B (en) | Preparation method of local doped crystalline silicon solar cell and prepared cell | |
| CN103094414B (en) | Carry on the back the preparation method of passivation solar battery back electric field and there is the back of the body passivation solar cell of this back of the body electric field | |
| US9214584B2 (en) | Solar cell, method for manufacturing dopant layer, and method for manufacturing solar cell | |
| CN104009119A (en) | Method for manufacturing P type crystalline silicon grooved buried-contact battery | |
| TWI438907B (en) | A printing method for making barrier in buried-contact solar cell fabrication and its resultant device | |
| TW201222851A (en) | Manufacturing method of bifacial solar cells | |
| TWI415272B (en) | Method of fabricating rear surface point contact of solar cells | |
| CN103178135A (en) | Solar cell and preparation method thereof | |
| JP2012212769A (en) | Solar cell element | |
| Nishimura et al. | Over 21% efficiency of n-type monocrystalline silicon PERT photovoltaic cell with boron emitter | |
| CN102800742B (en) | Back contacts crystal silicon solar cell sheet manufacture method | |
| TWI568012B (en) | Bifacial solar cell manufacturing method | |
| KR20080062515A (en) | Method of preparing solar cell and solar cell prepared by the same | |
| KR20080050863A (en) | Method of preparing solar cell and solar cell | |
| Sastrawan et al. | Implementation of a multicrystalline ALD-Al2O3-PERC technology into an industrial pilot production | |
| CN109659397B (en) | IBC battery and manufacturing method thereof | |
| CN102403409A (en) | Manufacturing method for crystalline silicon solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150225 Termination date: 20170225 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |