CN106784049B - Preparation method of local doped crystalline silicon solar cell and prepared cell - Google Patents

Preparation method of local doped crystalline silicon solar cell and prepared cell Download PDF

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CN106784049B
CN106784049B CN201611258030.8A CN201611258030A CN106784049B CN 106784049 B CN106784049 B CN 106784049B CN 201611258030 A CN201611258030 A CN 201611258030A CN 106784049 B CN106784049 B CN 106784049B
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doping
slurry
crystalline silicon
solar cell
opening
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CN106784049A (en
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吴坚
王栩生
蒋方丹
邢国强
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CSI Cells Co Ltd
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CSI Solar Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

the invention provides a preparation method of a local doped crystalline silicon solar cell and a prepared cell thereof, wherein the method comprises the following steps: depositing a passivation layer on the back of the crystal silicon wafer, locally opening the passivation layer, depositing doping slurry at the local opening and doping on the back; and optionally, back-depositing a first metal paste; wherein the size of the local opening is smaller than that of the deposited doping paste. According to the invention, by adjusting the size of the local opening on the back and the size of the deposited doped slurry, the back surface field strength of the battery can be obviously increased, the recombination rate of a local area is reduced, the open-circuit voltage and the filling factor are further greatly improved, and finally the conversion efficiency of the battery is greatly improved.

Description

Preparation method of local doped crystalline silicon solar cell and prepared cell
Technical Field
The invention belongs to the field of solar cells, relates to a preparation method of a locally-doped crystalline silicon solar cell and a locally-doped crystalline silicon solar cell prepared by the preparation method, and particularly relates to a method for preparing the locally-doped crystalline silicon solar cell by adjusting the size of a local opening on the back and the size of deposited doping slurry and the locally-doped crystalline silicon solar cell prepared by the method.
Background
with the development of technology, a local back contact back Passivation (PERC) solar cell is developed, which is a new high-efficiency solar cell and has received extensive attention in the industry. The core of the method is that the backlight surface of a silicon chip is covered by an aluminum oxide or silicon oxide film (5-100 nanometers) to passivate the surface and improve the long-wave response, so that the conversion efficiency of the battery is improved.
The conventional PERC solar cell structure mainly includes a silicon wafer layer having a PN junction, and a passivation layer, a silicon nitride thin film layer and an aluminum metal layer sequentially disposed on the back surface of the silicon wafer layer, and for example, CN 104882498A, CN 106057920a and CN105470349A both disclose a PERC solar cell. The preparation method of the PERC solar cell mainly comprises the following steps: the solar cell manufactured by the method has the structure shown in fig. 1, and comprises the following steps of texturing, diffusing, back polishing, etching and impurity removing glass, back depositing a passivation layer (such as aluminum oxide, a silicon oxide film or silicon nitride), front depositing a silicon nitride antireflection layer, back partial opening, screen printing of back silver paste, screen printing of back aluminum paste, screen printing of front silver paste and sintering.
As can be seen from fig. 3, the P/P + structure is formed locally on the back of the silicon wafer by substitutional doping of aluminum atoms in silicon, but due to the solid solubility limit of aluminum atoms in silicon, the peak concentration of P + can only reach 3 × 10 18 cm -3, which limits the cell conversion efficiency of the solar cell.
In order to obtain higher cell conversion efficiency, new south Wales State university proposed PERL structure, which is characterized by using boron atoms with high solid solubility in silicon to replace aluminum to form doping, the doping concentration can reach 1 × 10 19 -5 × 10 19 cm -3, and because the concentration of P + is increased, local stronger back surface field passivation can be achieved, and higher open-circuit voltage and filling factor can be obtained.
both CN 103996746A and CN 104638033A disclose a PERL solar cell and a preparation method thereof, the PERL structure is shown in figure 6, boron can be seen to diffuse into a silicon wafer in the high-temperature or laser processing process, a P + area is formed at an opening of a passivation film, and a chemical potential difference is generated due to the fact that the boron concentration of the P + area is far higher than that of a P-type silicon wafer, a local boron back field is formed, and the cell conversion efficiency of the solar cell is improved.
The preparation method of the conventional PERL solar cell mainly comprises the following steps: texturing, diffusion, back etching, back depositing a passivation layer (such as aluminum oxide, a silicon oxide film or silicon nitride), front depositing a silicon nitride antireflection layer, screen printing boron paste, back laser simultaneous film opening and boron doping, screen printing back silver paste, screen printing back aluminum paste, screen printing front silver paste and sintering. The preparation method of the PERL is characterized in that: the size of the laser doping area is 25-60 mu m and is smaller than that of the deposited boron slurry.
The preparation method of the PERL has the defects that the doping depth is only 6-8 mu m, when aluminum slurry is sintered, in a small size, due to violent reaction of silicon and aluminum, the aluminum can be drilled into a silicon wafer as deep as possible, the depth is as much as 20 mu m and far deeper than the doping depth of boron, therefore, most of boron is diluted and left in the silicon-aluminum alloy, a small amount of boron is left in the silicon, the content of boron in the silicon is only 10 18 cm -3, the strength of a formed boron-aluminum back field is only slightly increased compared with that of the PERC, the efficiency is generally improved within 0.1%, and the efficiency of the solar cell cannot be effectively improved.
disclosure of Invention
the invention provides a preparation method of a local doped crystalline silicon solar cell and the prepared cell thereof, aiming at the problems that the cell performance of the solar cell cannot be further improved due to low doping concentration of the conventional PERC solar cell, and the problems that the cell conversion efficiency of the solar cell cannot be effectively improved due to limited boron-aluminum back field strength formed in the conventional PERL solar cell, the preparation process is complicated, the cost is high, the industrial production is not facilitated and the like. According to the invention, by adjusting the size of the local opening on the back and the size of the deposited doped slurry, the back surface field strength of the battery can be obviously increased, the recombination rate of a local area is reduced, the open-circuit voltage and the filling factor are further greatly improved, and finally the conversion efficiency of the battery is greatly improved.
In order to achieve the purpose, the invention adopts the following technical scheme:
in a first aspect, the present invention provides a method for preparing a locally doped crystalline silicon solar cell, comprising the steps of:
(1) Depositing a passivation layer on the back of the crystal silicon wafer;
(2) Opening the passivation layer locally;
(3) Depositing doping slurry at the local opening;
(4) doping on the back;
Optionally, (5) back-depositing a first metal paste;
Wherein, the size of the local opening in the step (2) is smaller than that of the doping slurry deposited in the step (3).
In a second aspect, the present invention provides a method for preparing a locally doped crystalline silicon solar cell, the method comprising the steps of:
(A) Depositing a passivation layer on the back of the crystal silicon wafer;
(B) depositing a doping paste on the passivation layer;
(C) Opening a local opening on the back surface and doping at the same time;
optionally, (D) back-depositing a first metal paste;
Wherein, the size of the local opening in the step (C) is smaller than that of the doping paste deposited in the step (B).
the sizes of the deposited doping slurry are 110-300 mu m, the deposited doping slurry is close to the thickness of a silicon wafer, aluminum enters the silicon body along the width direction more by violent reaction of the silicon and the aluminum during sintering, the depth is not more than 4 mu m and is lower than the doping depth of elements in the doping slurry, therefore, most of the elements in the doping slurry are remained in the silicon, the content of the elements in the doping slurry in the silicon reaches 6 multiplied by 10 19 cm -3 -9 multiplied by 10 20 cm -3, and the cell conversion efficiency of the solar cell is effectively improved.
in the preparation methods of the present invention, the "local opening" is typically but not limited to a local dot-like opening, that is, if each small opening region is regarded as an "opening unit", a plurality (not less than 2) "opening units" are opened on the back passivation layer.
in the above method, the size of the local opening is smaller than the size of the deposited doping paste, which means that the area of the opening region formed after the back passivation layer is acted on is smaller than the area of the locally deposited doping paste.
In each of the above preparation methods, the crystalline silicon wafer further includes a pretreatment process before the back deposition of the passivation layer, the pretreatment process includes texturing, diffusion, back etching, impurity-removing glass treatment and front deposition of the antireflection layer, which is a conventional operation in the art, and therefore specific operation steps and parameters are not described herein again.
In the above preparation methods, the front and back screen printing of silver paste and the sintering treatment are also included after each step, which is a conventional operation in the art, so the specific operation steps and parameters are not described herein again.
The following technical solutions are preferred but not limited to the technical solutions provided by the present invention, and the technical objects and advantages of the present invention can be better achieved and realized by the following technical solutions.
As a preferable technical scheme of the invention, the local opening mode in the step (2) is laser opening or corrosion opening.
Preferably, the etch openings are solution and/or slurry etch openings.
Preferably, the doping method in step (4) is any one of laser induction, thermal drive or ion implantation or a combination of at least two of them.
As a preferred technical scheme of the invention, the method for simultaneously doping and partially opening in the step (C) comprises the following steps: an opening is formed in the passivation layer using a laser while laser doping is performed.
In a preferred embodiment of the present invention, the local opening size in step (2) and step (C) is independently 100 μm to 200. mu.m, for example, 100. mu.m, 110. mu.m, 120. mu.m, 130. mu.m, 140. mu.m, 150. mu.m, 160. mu.m, 170. mu.m, 180. mu.m, 190. mu.m, or 200. mu.m, but the present invention is not limited to the above-mentioned values, and other values not listed in the above-mentioned numerical range are also applicable.
preferably, the size of the dopant paste deposited in step (3) and step (B) is independently 110 μm to 300 μm, such as 110 μm, 130 μm, 150 μm, 170 μm, 200 μm, 230 μm, 250 μm, 270 μm, or 300 μm, but is not limited to the recited values, and other values not recited in this range are equally applicable. If each small area for depositing the doping paste is regarded as a doping paste unit, a plurality of (more than or equal to 2) doping paste units are deposited on the passivation layer deposited on the back surface, and the size of each doping paste unit is 40-200 mu m.
As a preferable technical scheme of the invention, the crystalline silicon wafer in the step (1) and the crystalline silicon wafer in the step (A) are both independent p-type silicon wafers.
preferably, the deposition method in the back deposition of the passivation layer in step (1) and step (a) is any one or a combination of at least two of screen printing, chemical vapor deposition, physical vapor deposition or ink jet printing.
Preferably, the passivation layer in the back side deposition passivation layer of step (1) and step (a) is independently any one of aluminum oxide, silicon nitride or silicon oxide film or a combination of at least two of the following, typical but non-limiting examples being: a combination of aluminum oxide and silicon nitride, a combination of silicon nitride and a silicon oxide film, a combination of aluminum oxide, silicon nitride and a silicon oxide film, and the like.
As a preferred technical solution of the present invention, the deposition methods in the step (3) and the step (B) of depositing the doping paste are independently any one or a combination of at least two of screen printing, chemical vapor deposition, physical vapor deposition or inkjet printing, preferably screen printing;
Preferably, the doping slurry in the deposition doping slurry in the step (3) and the step (B) is a doping slurry of aluminum element and at least one third main group element with solid solubility in silicon greater than that of aluminum, preferably boron slurry.
as a preferred embodiment of the present invention, the deposition method in the back-side deposition of the first metal paste in step (5) and step (D) is any one of screen printing, chemical vapor deposition, physical vapor deposition, and inkjet printing, preferably screen printing.
Preferably, the back-side deposition first metal paste of step (5) and step (D) is an aluminum paste.
In a third aspect, the invention provides a locally doped crystalline silicon solar cell prepared by any one of the preparation methods.
As a preferable technical scheme of the invention, the cell comprises a crystalline silicon wafer layer, and a passivation layer and a first metal conductive layer which are arranged on the back surface of the crystalline silicon wafer layer, wherein the passivation layer is provided with a plurality of openings, the openings are filled with first metal slurry, and the crystalline silicon wafer layer is doped along the openings in sequence into the crystalline silicon wafer layer to form an alloy layer, a first doping back field and a second doping back field.
the term "plurality" as used herein means "at least 2".
In a preferred embodiment of the present invention, the height of the highest point of the alloy layer is 3 μm to 15 μm, for example, 3 μm, 5 μm, 7 μm, 10 μm, 13 μm, or 15 μm, but the height is not limited to the above-mentioned values, and other values not shown in the above-mentioned value range are also applicable, and the height is based on the interface between the crystalline silicon wafer and the passivation layer.
Preferably, the first doped back field aluminum element dopes the formed back field.
preferably, the first doping back field thickness is 0.5 μm to 3 μm, such as 0.5 μm, 0.7 μm, 1 μm, 1.3 μm, 1.5 μm, 1.7 μm, 2 μm, 2.3 μm, 2.5 μm, 2.7 μm or 3 μm, but is not limited to the recited values, and other values not recited in this range of values are equally applicable.
Preferably, the second doping back field is formed by doping at least one third main group element with solid solubility greater than that of aluminum in silicon, and is preferably boron back field.
preferably, the height of the highest point of the second doping back field is 5 μm to 20 μm, such as 5 μm, 7 μm, 10 μm, 13 μm, 15 μm, 17 μm or 20 μm, but is not limited to the values listed, and other values not listed in the range of the values are also applicable, where the height is based on the interface of the crystalline silicon wafer and the passivation layer.
preferably, the doping concentration of the at least one third main group element having a solid solubility in silicon greater than aluminum in the second doping back field is 6 × 10 19 cm -3 to 9 × 10 20 cm -3, such as 7 × 10 19 cm -3, 9 × 10 19 cm -3, 1 × 10 20 cm -3, 1.3 × 10 20 cm -3, 1.5 × 10 20 cm -3, 1.7 × 10 20 cm -3, 2 × 10 20 cm -3, 4 × 10 20 cm -3, 6 × 10 20 cm -3, or 9 × 10 20 cm -3, but not limited to the recited values, and other values not recited in the range are equally applicable.
in the invention, the crystal silicon wafer layer is a p-type silicon wafer layer.
In the present invention, the passivation layer is any one of or a combination of at least two of aluminum oxide, silicon nitride or silicon oxide thin films, and typical but non-limiting examples of the combination are: a combination of aluminum oxide and silicon nitride, a combination of silicon nitride and a silicon oxide film, a combination of aluminum oxide, silicon nitride and a silicon oxide film, and the like.
The front surface of the crystalline silicon sheet layer can be sequentially provided with a texturing surface diffusion layer, a texturing surface antireflection layer and a texturing surface silver electrode, which are conventional arrangements of the existing doped crystalline silicon cell and are not described herein again.
The back surface of the crystalline silicon sheet layer can be also provided with back silver electrodes in a distributed mode, and the back silver electrodes are conventional in the conventional doped crystalline silicon cell and are not described herein in detail.
Compared with the prior art, the invention has the following beneficial effects:
+ 18 -3 19 -3 20 -3According to the invention, the size of the local opening on the back surface and the deposition of the doping slurry are adjusted, so that the size of the local opening is smaller than that of the deposition of the doping slurry, and the doping concentration of boron in silicon is improved.
Meanwhile, compared with the existing PERL solar cell, the preparation method of the local doped crystalline silicon solar cell is simpler, has lower cost and higher compatibility with the existing industrial equipment, and is beneficial to industrial production.
Drawings
FIG. 1 is a top view of the back side of a PERC solar cell structure as described in prior art or comparative example 1;
FIG. 2 is an enlarged partial top view of portion A of a top view of the back side of a PERC solar cell structure described in prior art or comparative example 1;
FIG. 3 is a side view in section a-a' in a partially enlarged top view of portion A in a top view of the back side of a PERC solar cell structure described in prior art or comparative example 1;
FIG. 4 is a top view of the back side of a PERL solar cell structure described in prior art or comparative example 2;
FIG. 5 is an enlarged partial top view of portion A of a top view of the back side of the PERL solar cell structure described in prior art or comparative example 2;
FIG. 6 is a side view in section a-a' in a partial enlarged top view of portion A in a top view of the back side of the PERL solar cell structure described in prior art or comparative example 2;
Fig. 7 is a top view of the back side of a partially doped crystalline silicon solar cell structure as described in example 1 of the present invention;
Fig. 8 is a partially enlarged top view of a portion a in a top view of the back side of the partially doped crystalline silicon solar cell structure described in embodiment 1 of the present invention;
Fig. 9 is a side view along a section a-a' in a partially enlarged top view of a portion a in a top view of the back side of the partially doped crystalline silicon solar cell structure described in embodiment 1 of the present invention;
the solar cell comprises a substrate, a solar cell body, a solar cell panel, a.
Detailed Description
In order to better illustrate the present invention and facilitate the understanding of the technical solutions of the present invention, the present invention is further described in detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
the embodiment of the invention provides a method for preparing a local doped crystalline silicon solar cell,
In one aspect, the method comprises the steps of:
(1) depositing a passivation layer on the back of the crystal silicon wafer;
(2) Opening the passivation layer locally;
(3) Depositing doping slurry at the local opening;
(4) doping on the back;
Optionally, (5) back-depositing a first metal paste;
Wherein, the size of the local opening in the step (2) is smaller than that of the doping slurry deposited in the step (3).
Secondly, the method comprises the following steps:
(A) Depositing a passivation layer on the back of the crystal silicon wafer;
(B) depositing a doping paste on the passivation layer;
(C) Opening a local opening on the back surface and doping at the same time;
Optionally, (D) back-depositing a first metal paste;
Wherein, the size of the local opening in the step (C) is smaller than that of the doping paste deposited in the step (B).
The invention also provides a local doped crystalline silicon solar cell prepared by any one of the preparation methods, the cell comprises a crystalline silicon layer 1, and a passivation layer 2 and a first metal conducting layer 3 which are sequentially arranged on the back surface of the crystalline silicon layer 1, a plurality of openings are formed in the passivation layer 2, first metal slurry is filled in the openings, and an alloy layer 4, a first doped back field 5 and a second doped back field 6 are sequentially doped in the crystalline silicon layer 1 along the openings into the crystalline silicon layer.
The following are typical but non-limiting examples of the invention:
Example 1:
The embodiment provides a local doping crystalline silicon solar cell, the structure of the local doping crystalline silicon solar cell is as shown in fig. 7-9, and the local doping crystalline silicon solar cell comprises a crystalline silicon layer 1, a passivation layer 2 and a first metal conducting layer 3, wherein the passivation layer 2 and the first metal conducting layer are sequentially arranged on the back surface of the crystalline silicon layer 1, a plurality of openings are formed in the passivation layer 2, first metal slurry is filled in the openings, and a silicon-aluminum alloy 4, an aluminum back surface field 5 and a boron back surface field 6 are sequentially formed in the crystalline silicon layer 1 by doping along the openings into the crystalline silicon layer.
the front side of the crystal silicon wafer layer 1 is sequentially provided with a texturing surface diffusion layer 7, a texturing surface antireflection layer 8 and a texturing surface silver electrode 9; and back silver electrodes 10 are distributed on the back surface of the crystal silicon layer 1.
The passivation layer 2 is made of aluminum oxide, the first metal conducting layer 3 is an aluminum electrode layer, the height of the highest point of the silicon-aluminum alloy 4 is 8 micrometers, the thickness of the aluminum back field 5 is 2 micrometers, the height of the highest point of the boron back field 6 is 12 micrometers, and the doping concentration of boron in the boron back field 6 is 7 multiplied by 10 19 cm -3.
The preparation method of the local doped crystalline silicon solar cell comprises the following steps:
sequentially performing texturing, diffusion, back etching, impurity glass removal treatment and front deposition antireflection layer on a crystalline silicon wafer, then performing back deposition passivation layer, depositing boron slurry on the passivation layer, and performing doping, back screen printing aluminum slurry, front screen printing silver slurry, back screen printing silver slurry and sintering treatment on a local opening on the back to obtain a local doped crystalline silicon solar cell; wherein, the local opening on the passivation layer is 100 μm and is smaller than the size (120 μm) of the screen printing boron paste.
example 2:
The present embodiment provides a locally doped crystalline silicon solar cell having the same structure as that of embodiment 1 except that a passivation layer 2 is a combination of an aluminum oxide and a silicon oxide thin film, and a method for manufacturing the same.
in the preparation method of the local doped crystalline silicon solar cell, except that the local opening on the passivation layer is 150 μm, and the size of the screen printing boron slurry is 190 μm, the preparation processes are the same as those in the preparation method of the embodiment 1.
by the method, the height of the highest point of the silicon-aluminum alloy 4 in the locally doped crystalline silicon solar cell is 6 microns, the thickness of the aluminum back field 5 is 2 microns, the height of the highest point of the boron back field 6 is 12 microns, and the doping concentration of boron in the boron back field 6 is 1.2 multiplied by 10 20 cm -3.
Example 3:
the present embodiment provides a locally doped crystalline silicon solar cell having the same structure as that of embodiment 1 except that a passivation layer 2 is a combination of silicon nitride and a silicon oxide thin film, and a method for manufacturing the same.
The preparation method of this example is the same as that of example 1, except that the opening size of the partial opening is 190 μm, and the size of the screen printing boron paste is 240 μm.
By the method, the height of the highest point of the silicon-aluminum alloy 4 in the locally doped crystalline silicon solar cell is 3.5 microns, the thickness of the aluminum back field 5 is 2 microns, the height of the highest point of the boron back field 6 is 10 microns, and the doping concentration of boron in the boron back field 6 is 1.3 multiplied by 10 20 cm -3.
Example 4:
the present embodiment provides a locally doped crystalline silicon solar cell and a method for manufacturing the same, and the structure of the locally doped crystalline silicon solar cell is the same as that in embodiment 1 except that the passivation layer 2 is silicon nitride.
The preparation method of the partially doped crystalline silicon solar cell is the same as that in the embodiment 1 except that the size of the opening of the partial opening is 100 μm and the size of the screen printing boron paste is 150 μm.
By the method, the height of the highest point of the silicon-aluminum alloy 4 in the locally doped crystalline silicon solar cell is 4 microns, the thickness of the aluminum back field 5 is 2 microns, the height of the highest point of the boron back field 6 is 12 microns, and the doping concentration of boron in the boron back field 6 is 7 multiplied by 10 19 cm -3.
Example 5:
the present embodiment provides a locally doped crystalline silicon solar cell and a method for manufacturing the same, and the structure of the locally doped crystalline silicon solar cell is the same as that of embodiment 1 except that a passivation layer 2 is a silicon oxide thin film.
in the preparation method of the local doped crystalline silicon solar cell, except that the opening size of the local opening is 200 μm and the size of the screen printing boron paste is 300 μm, the preparation processes are the same as those in the preparation method of the embodiment 1.
by the method, the height of the highest point of the silicon-aluminum alloy 4 in the locally doped crystalline silicon solar cell is 5 microns, the thickness of the aluminum back field 5 is 2.5 microns, the height of the highest point of the boron back field 6 is 15 microns, and the doping concentration of boron in the boron back field 6 is 3 multiplied by 10 20 cm -3.
Comparative example 1:
the PERC solar cell comprises a crystalline silicon sheet layer 1, and a passivation layer 2 and a first metal conducting layer 3 which are sequentially arranged on the back surface of the crystalline silicon sheet layer 1, wherein the passivation layer 2 is provided with a plurality of openings, first metal slurry is filled in the openings, and a silicon-aluminum alloy 4 and an aluminum back field 5 are doped in the crystalline silicon sheet layer 1 along the openings, as shown in fig. 1-3.
The front side of the crystal silicon wafer layer 1 is sequentially provided with a texturing surface diffusion layer 7, a texturing surface antireflection layer 8 and a texturing surface silver electrode 9; and back silver electrodes 10 are distributed on the back surface of the crystal silicon layer 1.
The preparation method of the PERC solar cell comprises the following steps: and sequentially carrying out pretreatment, back deposition of a passivation layer, front deposition of an antireflection layer, back local opening, back deposition of silver paste, back deposition of aluminum paste, front deposition of silver paste, back deposition of silver paste and sintering treatment on the crystal silicon wafer to obtain the PERC solar cell.
comparative example 2:
the PERC solar cell comprises a crystalline silicon wafer layer 1, and a passivation layer 2 and a first metal conductive layer 3 which are sequentially arranged on the back surface of the crystalline silicon wafer layer 1, wherein the passivation layer 2 is provided with a plurality of openings, first metal conductive paste is filled in the openings, and a silicon-aluminum alloy 4 and a boron-aluminum back field 11 are formed in the crystalline silicon wafer layer 1 by doping along the openings.
the front side of the crystal silicon wafer layer 1 is sequentially provided with a texturing surface diffusion layer 7, a texturing surface antireflection layer 8 and a texturing surface silver electrode 9; and back silver electrodes 10 are distributed on the back surface of the crystal silicon layer 1.
the preparation method of the PERL solar cell comprises the following steps: texturing, diffusing, back etching, back depositing a passivation layer (such as aluminum oxide, a silicon oxide film or silicon nitride), front depositing a silicon nitride antireflection layer, screen printing boron paste, and simultaneously finishing film opening and boron doping by back laser, screen printing back silver paste, screen printing back aluminum paste, screen printing front silver paste and sintering, wherein the size of a laser doping area is 25-60 mu m and is smaller than that of the boron paste after printing.
performance test the solar cells described in examples 1 to 5 and comparative examples 1 to 2 were subjected to performance test, and the results of V oc (open circuit voltage), I sc (short circuit current), FF (fill factor), Effect (photoelectric conversion Efficiency) and back surface field p + peak doping concentration test at 25 ℃ are shown in Table 1.
Table 1: performance test Table for solar cells in examples 1 to 5 and comparative examples 1 to 2
it can be seen from the results of examples 1-5 and comparative examples 1-2 that the doping concentration of boron in silicon is increased by adjusting the local opening size on the back surface and depositing the doping slurry, and for the conventional PERC and PERL technologies, the peak value of the P + concentration can be increased from 3 × 10 18 cm -3 to 6 × 10 19 cm -3 cm to 9 × 10 20 cm -3, so that the back surface field strength of the cell can be significantly increased, the recombination rate in the local area can be reduced, the open-circuit voltage and the filling factor can be greatly increased, and finally the conversion efficiency of the cell can be greatly improved.
Meanwhile, compared with the existing PERL solar cell, the preparation method of the local doped crystalline silicon solar cell is simpler, has lower cost and higher compatibility with the existing industrial equipment, and is beneficial to industrial production.
The applicant states that the present invention is illustrated by the above examples to show the detailed process equipment and process flow of the present invention, but the present invention is not limited to the above detailed process equipment and process flow, i.e. it does not mean that the present invention must rely on the above detailed process equipment and process flow to be implemented. It should be understood by those skilled in the art that any modification of the present invention, equivalent substitutions of the raw materials of the product of the present invention, addition of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.

Claims (17)

1. A preparation method of a local doped crystalline silicon solar cell is characterized by comprising the following steps:
(1) Depositing a passivation layer on the back of the crystal silicon wafer;
(2) opening the passivation layer locally;
(3) depositing doping slurry at the local opening;
(4) doping on the back;
(5) Depositing a first metal slurry on the back surface;
wherein, the size of the local opening in the step (2) is smaller than that of the doping slurry deposited in the step (3);
The doping slurry in the deposition doping slurry in the step (3) is aluminum element and boron slurry;
the first metal slurry in the first metal slurry deposition step (5) is aluminum slurry;
In the locally doped crystalline silicon solar cell prepared by the method, a silicon-aluminum alloy layer (4), an aluminum back surface field (5) and a second doped back surface field (6) are sequentially doped in the crystalline silicon layer (1) along the opening into the crystalline silicon layer, and the height of the highest point of the silicon-aluminum alloy layer (4) is 3-15 microns;
The size of the local opening in the step (2) is 140-200 μm; the size of the deposited doping slurry in the step (3) is 170-300 mu m.
2. A preparation method of a local doped crystalline silicon solar cell is characterized by comprising the following steps:
(A) Depositing a passivation layer on the back of the crystal silicon wafer;
(B) Depositing a doping paste on the passivation layer;
(C) Opening a local opening on the back surface and doping at the same time;
(D) Depositing a first metal slurry on the back surface;
Wherein, the size of the local opening in the step (C) is smaller than that of the doping slurry deposited in the step (B);
The doping slurry in the deposition doping slurry in the step (B) is aluminum element and boron slurry;
the first metal slurry in the first metal slurry deposition step (D) is aluminum slurry;
In the locally doped crystalline silicon solar cell prepared by the method, a silicon-aluminum alloy layer (4), an aluminum back surface field (5) and a second doped back surface field (6) are sequentially doped in the crystalline silicon layer (1) along the opening into the crystalline silicon layer, and the height of the highest point of the silicon-aluminum alloy layer (4) is 3-15 microns;
The size of the local opening in the step (C) is 140-200 μm; the size of the deposited doping slurry in the step (B) is 170-300 mu m.
3. the method according to claim 1, wherein the local opening in step (2) is performed by laser opening or etching opening.
4. A method of producing as claimed in claim 3, characterized in that the erosion openings are solution and/or slurry erosion openings.
5. The method according to claim 1, wherein the doping method in step (4) is any one or a combination of at least two of laser induction, thermal drive, and ion implantation.
6. The method of claim 2, wherein the step (C) of doping and opening the opening partially comprises: an opening is formed in the passivation layer using a laser while laser doping is performed.
7. the production method according to claim 1 or 2, wherein the crystalline silicon wafer of step (1) and the crystalline silicon wafer of step (a) are each independently a p-type silicon wafer.
8. The method for preparing the passivation layer according to claim 1 or 2, wherein the deposition method in the step (1) and the step (A) of depositing the passivation layer on the back surface is independently any one or a combination of at least two of screen printing, chemical vapor deposition, physical vapor deposition or ink jet printing.
9. The method according to claim 1 or 2, wherein the passivation layer in the back side deposition passivation layer of step (1) and step (A) is independently any one of aluminum oxide, silicon nitride or silicon oxide film or a combination of at least two of the above.
10. The method according to claim 1 or 2, wherein the deposition method in the step (3) and the step (B) of depositing the doping paste is independently any one or a combination of at least two of screen printing, chemical vapor deposition, physical vapor deposition or ink jet printing.
11. the method of claim 10, wherein the deposition method in the step (3) and the step (B) of depositing the doping paste is independently screen printing.
12. the method according to claim 1 or 2, wherein the deposition method in the step (5) and the step (D) of back-depositing the first metal paste is independently any one of screen printing, chemical vapor deposition, physical vapor deposition, or inkjet printing.
13. The method of claim 12, wherein the deposition method in the back-side depositing the first metal paste in step (5) and step (D) is independently screen printing.
14. The locally doped crystalline silicon solar cell prepared by the preparation method according to claim 1 or 2, wherein the locally doped crystalline silicon solar cell comprises: the solar cell comprises a crystal silicon sheet layer (1), and a passivation layer (2) and a first metal conducting layer (3) which are sequentially arranged on the back of the crystal silicon sheet layer (1), wherein a plurality of openings are formed in the passivation layer (2), aluminum slurry is filled in the openings, a silicon-aluminum alloy layer (4), an aluminum back surface field (5) and a second doping back surface field (6) are sequentially doped in the crystal silicon sheet layer (1) along the openings, and the height of the highest point of the silicon-aluminum alloy layer (4) is 3-15 mu m.
15. locally doped crystalline silicon solar cell according to claim 14, characterized in that the thickness of the aluminum back field (5) is between 0.5 μ ι η and 3 μ ι η.
16. Locally doped crystalline silicon solar cell according to claim 14, characterized in that the height of the highest point of the second doped back field (6) is between 5 μ ι η and 20 μ ι η.
17. the locally doped crystalline silicon solar cell according to claim 14, characterized in that the doping concentration of boron in the second doping back field (6) having a solid solubility in silicon greater than aluminum is between 6 x 10 19 cm -3 and 9 x 10 20 cm -3.
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