CN101447532A - Method for preparing crystalline silicon solar cell with passivation on double surfaces - Google Patents
Method for preparing crystalline silicon solar cell with passivation on double surfaces Download PDFInfo
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- CN101447532A CN101447532A CNA2008102074911A CN200810207491A CN101447532A CN 101447532 A CN101447532 A CN 101447532A CN A2008102074911 A CNA2008102074911 A CN A2008102074911A CN 200810207491 A CN200810207491 A CN 200810207491A CN 101447532 A CN101447532 A CN 101447532A
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- solar cell
- passivation
- passivation layer
- crystalline silicon
- silicon solar
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for preparing a crystalline silicon solar cell with passivation on double surfaces. The method comprises the following steps: laminated passivation layers are prepared on the front and the back surfaces of the solar cell; by utilizing a method of screen printing corrosive sizing agent on the laminated passivation layer on the back surface, an electrode window is opened on the laminated passivation layer on the back surface; and then a back electrode is formed by screen printing or sputtering on the electrode window. By utilizing the screen printing corrosive sizing agent method, a structure of passivation on double surfaces of the solar cell is achieved; the structure greatly improves long-wave responses of the solar cell, and increases the conversion efficiency of the solar cell; and meanwhile, as an all-aluminium back surface field is cancelled and a local aluminum back surface field is adopted, bending of the solar cell is reduced and the structure is more suitable for the trend of solar cell thin section. As the method utilizes screen printing technique to replace pholithography and a laser sintering method, production costs are saved. Furthermore, the method is more suitable for mass production.
Description
Technical field
The present invention relates to solar photoelectric and utilize the field, be specifically related to a kind of preparation method of crystal-silicon solar cell.
Background technology
Present commercialization manufacture of solar cells technological process is simple, manufacturing cost is cheap relatively.Its technological process of production is as shown in Figure 1: remove silicon chip surface affected layer, making herbs into wool face → at POCl
3Carry out the P diffusion in the atmosphere, form n
+Diffusion layer → utilize plasma etching or wet etching, remove the PN junction of silicon chips periphery → utilize PECVD technology at front deposition SiNx antireflective coating → silk screen printing back electrode, back of the body electric field, positive electrode → sintering forms ohmic contact → testing, sorting in sintering furnace.This commercialization solar cell manufacturing technology is simple relatively, cost is lower, is fit to industrialization, automated production, thereby is used widely.But this technology also has certain disadvantages, and mainly is that technology is simple relatively, and the solar cell conversion efficiency is lower.
Present solar cell, positive deposition SiNx are as antireflective, passivating film, and the direct silk screen printing aluminium paste in the back side forms back of the body electric field by sintering.SiNx has passivation effect preferably, but not as thermal oxidation SiO
2, the a-Si film.The back side does not have the passivation measure, thus compound serious, cause the long wave response ratio of battery relatively poor.And along with the further attenuate of silicon chip, the compound adverse effect to solar cell at the back side will become particularly outstanding.Present full aluminium aluminum back surface field causes unbalanced stress even easily, makes the battery bending tablet, and is unfavorable to making assembly.
The efficient solar battery of laboratory development, the back side adopt thermal oxidation SiO usually
2, the a-Si passivation, utilize photoetching technique perforate on passivation layer then, form ohmic contact at tapping again.Perhaps utilize LFC (laser sintered) technology, on passivation layer, directly form ohmic contact.Because use equipment such as photoetching, laser,, be not suitable for extensive, the low-cost industrial production of solar cell so cost an arm and a leg.
Summary of the invention
The object of the present invention is to provide a kind of preparation method of crystalline silicon solar cell with passivation on double surfaces, this method is applicable to extensive, the low-cost industrial production of solar cell, and can improve the conversion efficiency of solar cell.
Purpose of the present invention is achieved by taking following technical measures:
A kind of preparation method of crystalline silicon solar cell with passivation on double surfaces, comprise the essential technology for preparing crystal-silicon solar cell, it is characterized in that, the front and back that also is included in solar cell prepares the lamination passivation layer, utilize silk screen printing to print the method for corrosivity slurry overleaf on the lamination passivation layer, the lamination passivation layer is opened electrode window through ray overleaf, and silk screen printing thereon or sputtering method form back electrode then.
Shown in Figure 2 is one of specific embodiment of the invention process:
A. remove silicon chip surface affected layer, making herbs into wool face;
B. in POCl3 atmosphere, carry out the P diffusion, form the n+ diffusion layer;
C. utilize wet etching, remove the PN junction of the silicon chip back side and periphery;
D. utilize thermal oxidation, PECVD or magnetron sputtering technique, silicon chip just, the back side prepares the SiO2 passivation layer;
E. utilize pecvd process at front and back deposition SiNx film;
G. utilize silk screen printing to print the method for corrosivity slurry, open electrode window through ray on the lamination passivation layer overleaf;
H. silk screen printing back electrode, the back of the body electric field, positive electrode;
I. sintering forms ohmic contact in sintering furnace;
J. testing, sorting.
The method that front and back of the present invention prepares the lamination passivation layer can be thermal oxidation, PECVD or magnetron sputtering.
Lamination passivation layer of the present invention is SiO
2/ SiNx, a-Si/SiNx, SiC/SiNx, a-Si/SiO
2Or a-Si/SiC, and just, the lamination passivation layer structure at the back side can be different.
Of the present inventionly utilize silk screen printing to print the corrosivity slurry overleaf on the passivation layer to open the manufacturing process of electrode window through ray and be: a. is printed onto the position that back of solar cell need be realized ohmic contact with the corrosivity slurry; B. after the corrosivity slurry fully corrodes backside passivation layer, silicon chip is cleaned, remove the corrosivity slurry.
Corrosivity slurry of the present invention, its corrosion composition are hydrogen fluoride ammonia.
Backplate window of the present invention is the intersection contact structures that the contact wire of equally distributed contact hole, equally distributed contact wire or longitude and latitude distribution constitutes, shown in Fig. 3-5.
The present invention utilizes the method for silk screen printing corrosivity slurry, has realized the passivation on double surfaces solar battery structure.The passivation on double surfaces structure improves the solar cell long wave greatly and responds, and has improved the conversion efficiency of solar cell, simultaneously because cancelled full aluminium aluminum back surface field, adopts local aluminum back of the body field, has reduced the bending of solar cell, more adapts to the trend of solar cell sheet.Use screen printing technique to replace photoetching, laser sintered way, saved production cost, be more suitable for large-scale production.
Below in conjunction with the drawings and specific embodiments the present invention is described in further detail.
Description of drawings
Fig. 1 is business-like solar cell technological process of production figure;
Fig. 2 is the technological process of production figure of Sio2/SiN crystalline silicon solar cell with passivation on double surfaces of the present invention;
Fig. 3 is the representative pattern (equally distributed contact hole) of back of solar cell electrode window through ray of the present invention;
Fig. 4 is the representative pattern (equally distributed contact wire) of back of solar cell electrode window through ray of the present invention;
Fig. 5 is the representative pattern (the intersection contact structures that the contact wire that longitude and latitude distributes constitutes) of back of solar cell electrode window through ray of the present invention.
Embodiment
The invention will be further described below in conjunction with drawings and Examples.Figure 2 shows that the concrete preparation process of the crystalline silicon solar cell with passivation on double surfaces of the embodiment of the invention:
(1) removes silicon chip surface affected layer, making herbs into wool face;
(2) in POCl3 atmosphere, carry out the P diffusion, form n
+Diffusion layer;
(3) utilize wet etching, (traditional handicraft only need be removed the PN junction of diffusion back silicon chips periphery and gets final product to remove the PN junction of the silicon chip back side and periphery, the PN junction at the back side can be in the process of making back of the body electric field, compensated by A1, but in preparation passivation on double surfaces solar cell process, because the aluminium paste of back up can be separated by the lamination passivation layer, therefore can't compensate the P that the back side enters in the diffusion process, therefore must be after diffusion the PN junction at the back side be gone to the greatest extent);
(4) prepare SiO on the silicon chip two sides
2Passivation layer, the preparation method of this passivation layer can be thermal oxidation, also can be PECVD or magnetron sputtering;
(5) utilize PECVD or magnetron sputtering at front and back deposition SiNx film, form SiO
2(the lamination passivation layer can also be a-Si/SiNx, SiC/SiNx, a-Si/SiO to/SiNx lamination passivation layer
2Or a-Si/SiC or the like);
(6) utilize silk screen printing to print the method for corrosivity slurry, open electrode window through ray on the lamination passivation layer overleaf, the technical process of opening electrode window through ray in back of solar cell lamination passivation layer surface is: print the corrosivity slurry according to the pattern shown in Fig. 3-5 on the passivation layer overleaf; When the corrosivity slurry fully corrodes SiO
2Behind the layer, cleaning silicon chip is removed corrosivity slurry (described corrosivity slurry corrosion composition is a hydrogen fluoride ammonia);
(7) silk screen printing back electrode, back of the body electric field, positive electrode;
(8) sintering forms ohmic contact in sintering furnace;
(9) testing, sorting.
In a word, the present invention has exemplified above-mentioned preferred implementation, but should illustrate that those skilled in the art can carry out various variations and remodeling.Therefore, unless such variation and remodeling have departed from scope of the present invention, otherwise all should be included in protection scope of the present invention.
Claims (6)
1. the preparation method of a crystalline silicon solar cell with passivation on double surfaces, comprise the essential technology for preparing crystal-silicon solar cell, it is characterized in that, the front and back that also is included in solar cell prepares the lamination passivation layer, utilize silk screen printing to print the method for corrosivity slurry overleaf on the lamination passivation layer, the lamination passivation layer is opened electrode window through ray overleaf, forms back electrode with silk screen printing or sputtering method thereon then.
2. the preparation method of crystalline silicon solar cell with passivation on double surfaces according to claim 1 is characterized in that, the method that front and back prepares the lamination passivation layer is thermal oxidation, PECVD or magnetron sputtering.
3. the preparation method of crystalline silicon solar cell with passivation on double surfaces according to claim 2 is characterized in that, the lamination passivation layer is SiO
2/ SiNx, a-Si/SiNx, SiC/SiNx, a-Si/SiO
2Or a-Si/SiC, and just, the lamination passivation layer structure at the back side can be different.
4. the preparation method of crystalline silicon solar cell with passivation on double surfaces according to claim 1, it is characterized in that utilize silk screen printing to print the corrosivity slurry overleaf on the passivation layer and open the manufacturing process of electrode window through ray and be: a. is printed onto the position that back of solar cell need be realized ohmic contact with the corrosivity slurry; B. after the corrosivity slurry fully corrodes backside passivation layer, silicon chip is cleaned, remove the corrosivity slurry.
5. the preparation method of crystalline silicon solar cell with passivation on double surfaces according to claim 4 is characterized in that, the corrosivity slurry that is adopted, its corrosion composition are hydrogen fluoride ammonia.
6. crystalline silicon solar cell with passivation on double surfaces according to claim 1 is characterized in that, the backplate window is the intersection contact structures that the contact wire of equally distributed contact hole, equally distributed contact wire or longitude and latitude distribution constitutes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNA2008102074911A CN101447532A (en) | 2008-12-22 | 2008-12-22 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
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|---|---|---|---|
| CNA2008102074911A CN101447532A (en) | 2008-12-22 | 2008-12-22 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
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| CN101447532A true CN101447532A (en) | 2009-06-03 |
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| CN101794833A (en) * | 2010-03-03 | 2010-08-04 | 中国科学院电工研究所 | Solar cell with passivated dielectric medium on back surface and preparation method thereof |
| CN101976701A (en) * | 2010-07-28 | 2011-02-16 | 常州天合光能有限公司 | Manufacturing method of back passivation cell |
| CN102136518A (en) * | 2011-02-21 | 2011-07-27 | 芜湖明远新能源科技有限公司 | Double-side passivated effective silicon solar cell and technical flows |
| WO2011131000A1 (en) * | 2010-04-20 | 2011-10-27 | 常州天合光能有限公司 | Method for achieving graded lamination passivation thin film on backplane of solar battery |
| CN102244136A (en) * | 2010-05-12 | 2011-11-16 | 中国科学院微电子研究所 | Method for preparing interdigital back contact double-sided solar cell |
| CN102255000A (en) * | 2011-08-08 | 2011-11-23 | 山东力诺太阳能电力股份有限公司 | Preparing method of solar cell slice with pattern |
| CN102290492A (en) * | 2011-08-31 | 2011-12-21 | 无锡赛晶太阳能有限公司 | Diffusion preparing technology of crystalline silicon solar battery plate |
| CN102364696A (en) * | 2011-06-30 | 2012-02-29 | 常州天合光能有限公司 | Method for passivating crystalline silicon solar cell |
| CN102403409A (en) * | 2011-11-24 | 2012-04-04 | 苏州阿特斯阳光电力科技有限公司 | Manufacturing method for crystalline silicon solar cell |
| CN102414839A (en) * | 2009-06-05 | 2012-04-11 | 应用材料公司 | Passivation process for solar cell fabrication |
| CN102437246A (en) * | 2011-12-20 | 2012-05-02 | 日地太阳能电力股份有限公司 | Preparation method of crystalline silicon solar cell |
| CN102468365A (en) * | 2010-11-18 | 2012-05-23 | 台湾茂矽电子股份有限公司 | Manufacturing method for double-face solar cell |
| CN102544220A (en) * | 2012-01-20 | 2012-07-04 | 英利集团有限公司 | Manufacturing method of N-shaped solar battery silicon crystal circular battery sheet |
| CN102569530A (en) * | 2012-02-24 | 2012-07-11 | 上饶光电高科技有限公司 | Local etching method for passivation dielectric layer on back side of crystal silicon solar cell |
| CN102651425A (en) * | 2011-02-25 | 2012-08-29 | 昱晶能源科技股份有限公司 | Method for manufacturing solar cell |
| CN102668103A (en) * | 2009-10-27 | 2012-09-12 | 卡利太阳能有限公司 | Polarization resistant solar cell with oxygen rich interface |
| CN102738252A (en) * | 2012-06-20 | 2012-10-17 | 常州天合光能有限公司 | Double-face passivated metal wrap through (MWT) solar battery and manufacturing method thereof |
| CN102738304A (en) * | 2012-06-25 | 2012-10-17 | 晶澳（扬州）太阳能科技有限公司 | Method for manufacturing back electrode of crystalline silicon solar cell by using local aluminum back surface field structure |
| CN102763225A (en) * | 2009-12-09 | 2012-10-31 | 速力斯公司 | High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods using semiconductor wafers |
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-
2008
- 2008-12-22 CN CNA2008102074911A patent/CN101447532A/en active Pending
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