CN102403409A - Manufacturing method for crystalline silicon solar cell - Google Patents
Manufacturing method for crystalline silicon solar cell Download PDFInfo
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- CN102403409A CN102403409A CN201110378572XA CN201110378572A CN102403409A CN 102403409 A CN102403409 A CN 102403409A CN 201110378572X A CN201110378572X A CN 201110378572XA CN 201110378572 A CN201110378572 A CN 201110378572A CN 102403409 A CN102403409 A CN 102403409A
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- silicon solar
- crystalline silicon
- solar cell
- antireflection films
- solar energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a manufacturing method for a crystalline silicon solar cell, which comprises the following steps of: etching textures; diffusing; etching edges; removing impurity glass layers; coating antireflection films; locally removing the antireflection films; washing; printing; and sintering to obtain the crystalline silicon solar cells. In the step of locally removing the antireflection films, the antireflection films are removed by corrosion effect of corrosive pastes, and the shapes of the antireflection films removed by corrosion are the same as the patterns of the front electrodes; in the step of printing, the front electrodes are in direct contact with the front surfaces of the silicon wafers. In the method, the printed front electrodes can directly contact the silicon to form good contact resistance, so that electric performance of the crystalline silicon solar cell is improved, and photoelectric conversion efficiency of the crystalline silicon solar cell is effectively improved; and the test proves that compared with the existing preparation technology, contact resistance of the crystalline silicon solar cell manufactured by the method is greatly reduced, photoelectric conversion efficiency is absolutely improved by about 0.2%, and unexpected technical effect is achieved.
Description
Technical field
The present invention relates to a kind of preparation method of crystal silicon solar energy battery, belong to crystal silicon solar energy battery and make the field.
Background technology
Conventional fossil fuel is approach exhaustion day by day, and in existing sustainable energy, solar energy is undoubtedly a kind of cleaning, general and the most potential alternative energy source.At present; In all solar cells; Crystal silicon solar energy battery is one of solar cell that obtains business promotion on a large scale; This is that crystal silicon solar energy battery is compared the solar cell of other types simultaneously because silicon materials have very abundant reserves in the earth's crust, and excellent electric property and mechanical performance are arranged.Therefore, crystal-silicon solar cell in the photovoltaic field in occupation of consequence.The crystal silicon solar energy battery of research and development high performance-price ratio has become one of main direction of studying of various countries photovoltaic enterprise.
Preparation technology's flow process of existing crystal silicon solar energy battery comprises: antireflective coating-printing-sintering is established in making herbs into wool-diffusion-quarter limit-decontamination glassy layer-plating.Wherein, printing is meant at silicon chip back side silk screen printing back electrode, back of the body electric field, at the positive silk screen printing front electrode of silicon chip.
Yet when the front electrode sintering, electrical conductance and penetrability are difficult to take into account; These factors have increased the contact resistance of crystal silicon solar energy battery, have lost the electrical property of crystal silicon solar energy battery, have reduced the photoelectric conversion efficiency of crystal silicon solar energy battery to a certain extent.
Summary of the invention
The object of the invention provides a kind of preparation method of crystal silicon solar energy battery, to reduce the contact resistance of crystal silicon solar energy battery.
For achieving the above object; The technical scheme that the present invention adopts is: a kind of preparation method of crystal silicon solar energy battery; Comprise the steps: that making herbs into wool-diffusion-quarter limit-decontamination glassy layer-plating establishes antireflective coating-part and remove antireflective coating-cleaning-printing-sintering, can obtain said crystal silicon solar energy battery;
The said local antireflective coating of removing adopts corrosivity slurry erosion removal, and the shape of the antireflective coating of erosion removal is identical with the pattern of front electrode;
In the said print steps, front electrode and silicon chip front is directly contacted.
In the preceding text, utilize corrosivity slurry erosion removal antireflective coating, front electrode is directly contacted with silicon, form excellent contact resistance, improved the electrical property of crystal silicon solar energy battery, effectively increase the photoelectric conversion efficiency of crystal silicon solar energy battery.
In the preceding text, remove antireflective coating, clean 2 steps except the part, other steps all can adopt prior art.
In the technique scheme, said antireflective coating is a silicon nitride, and the main component of said corrosivity slurry is an ammonium fluoride.Said corrosivity slurry can adopt prior art, as long as can the erosion removal antireflective coating.
Because the technique scheme utilization, the present invention compared with prior art has advantage:
1. the present invention has increased local removal antireflective coating step, and the front electrode of printing is directly contacted with silicon, forms excellent contact resistance; Improve the electrical property of crystal silicon solar energy battery, effectively increased the photoelectric conversion efficiency of crystal silicon solar energy battery, evidence; Compare existing preparation technology; The contact resistance of the solar cell for preparing through method of the present invention reduces greatly, and photoelectric conversion efficiency has the absolute lifting about 0.2%, has obtained beyond thought technique effect.
2. preparation method of the present invention is simple, and easy operating is fit to large-scale production.
Embodiment
Below in conjunction with embodiment the present invention is further described:
Embodiment one
A kind of preparation method of crystal silicon solar energy battery comprises the steps:
(1) silicon chip (monocrystalline M156) is carried out preceding Dow Chemical prerinse and suede corrosion;
(2) in the front of P type silicon chip, phosphorous diffusion N layer;
(3) plasma etching is removed silicon chip side diffusion layer;
(4) remove phosphorosilicate glass;
(5) in the front of P type silicon chip, the PECVD silicon nitride film;
(6) use the corrosivity slurry that contains ammonium fluoride that the silicon nitride film layer part in front is removed, the shape of the antireflective coating of erosion removal is identical with the pattern of front electrode;
(7) the corrosivity slurry is removed in cleaning;
(8) silk screen printing back electrode, back of the body electric field and front electrode, and front electrode and silicon chip front are directly contacted;
(9) sintering obtains said crystal silicon solar energy battery.
The above-mentioned solar cell that makes at AM1.5, light intensity 1000W, is measured its unit for electrical property parameters under 25 ℃ of conditions of temperature, the result is following:
Comparative Examples one
Conventional monocrystalline M156 after conventional technical process, at AM1.5, light intensity 1000W, is measured its unit for electrical property parameters under 25 ℃ of conditions of temperature, the result is following:
Can find out that from the foregoing description and Comparative Examples the contact resistance of embodiment is less than Comparative Examples; Each electrical property obviously is better than Comparative Examples among the embodiment; The conversion efficiency of embodiment is 18.27%, Comparative Examples be 18.04%, embodiment is higher more than 0.2% than Comparative Examples.
It is thus clear that, adopt method of the present invention can improve crystal silicon solar energy battery contact resistance and electrical property, promote the conversion efficiency of solar cell.
Claims (2)
1. the preparation method of a crystal silicon solar energy battery; It is characterized in that; Comprise the steps: that making herbs into wool-diffusion-quarter limit-decontamination glassy layer-plating establishes antireflective coating-part and remove antireflective coating-cleaning-printing-sintering, can obtain said crystal silicon solar energy battery;
The said local antireflective coating of removing adopts corrosivity slurry erosion removal, and the shape of the antireflective coating of erosion removal is identical with the pattern of front electrode;
In the said print steps, front electrode and silicon chip front is directly contacted.
2. the preparation method of crystal silicon solar energy battery according to claim 1 is characterized in that, said antireflective coating is a silicon nitride, and the main component of said corrosivity slurry is an ammonium fluoride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110378572XA CN102403409A (en) | 2011-11-24 | 2011-11-24 | Manufacturing method for crystalline silicon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110378572XA CN102403409A (en) | 2011-11-24 | 2011-11-24 | Manufacturing method for crystalline silicon solar cell |
Publications (1)
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| CN102403409A true CN102403409A (en) | 2012-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201110378572XA Pending CN102403409A (en) | 2011-11-24 | 2011-11-24 | Manufacturing method for crystalline silicon solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538498A (en) * | 2014-12-30 | 2015-04-22 | 浙江贝盛光伏股份有限公司 | Crystalline silicon cell and manufacturing method thereof |
| CN105405919A (en) * | 2014-09-11 | 2016-03-16 | 上海神舟新能源发展有限公司 | Method of producing a colored crystalline silicon cell |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
| CN101764179A (en) * | 2009-12-31 | 2010-06-30 | 中山大学 | Manufacture method of selective front surface field N-type solar cell |
| CN101807628A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Method for manufacturing front side grid line electrode of solar battery |
-
2011
- 2011-11-24 CN CN201110378572XA patent/CN102403409A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
| CN101764179A (en) * | 2009-12-31 | 2010-06-30 | 中山大学 | Manufacture method of selective front surface field N-type solar cell |
| CN101807628A (en) * | 2010-04-02 | 2010-08-18 | 日强光伏科技有限公司 | Method for manufacturing front side grid line electrode of solar battery |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405919A (en) * | 2014-09-11 | 2016-03-16 | 上海神舟新能源发展有限公司 | Method of producing a colored crystalline silicon cell |
| CN104538498A (en) * | 2014-12-30 | 2015-04-22 | 浙江贝盛光伏股份有限公司 | Crystalline silicon cell and manufacturing method thereof |
| CN104538498B (en) * | 2014-12-30 | 2017-02-01 | 浙江贝盛光伏股份有限公司 | Crystalline silicon cell and manufacturing method thereof |
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Application publication date: 20120404 |