CN101692466A - Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique - Google Patents
Method for manufacturing high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique Download PDFInfo
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Abstract
The invention discloses a method for manufacturing a high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique. The preparation steps are: carrying out frontal phosphorous diffusion or partial phosphorous diffusion on the N-shaped silicon chip, growing a passivation layer and an antireflection layer, manufacturing a frontal electrode, carrying out back boron diffusion on the N-shaped silicon chip, growing a passivation layer and an antireflection layer, and manufacturing a back electrode. The inventive method has simple manufacturing technique, low cost, small investment on equipment and high production efficiency, and most part of the manufacturing technique can be carried out on a common conventional cell production line.
Description
Technical field
The present invention relates to the manufacture method of solar cell, particularly the manufacture method of the two-sided crystal silicon solar energy battery of N type.
Background technology
At present, traditional solar cell is to utilize P type crystalline silicon material, forms the pn knot in matrix front phosphorous diffusion, and the deposition antireflective film, and the back up aluminium paste is done back of the body field, has only the front to be subjected to " single face " solar cell of light.For the battery that utilizes this method manufacturing, the high-photoelectric transformation efficiency of the approval that obtains going together is about 17～18%, and the space of further improving cost performance on this basis is very limited.The minority carrier lifetime that it is found that P type silicon pulling of crystals (CZ) material in recent years can fail under illumination.Thereby try to seek other performance better material, as super magnetic pulling of crystals (MCZ), mix gallium pulling of crystals or the like.But though improved the performance of solar cell by these approach, cost also correspondingly rises.And N type progress in Czochralski silicon material does not have the problem of illumination decay, and on mechanism, metal impurities and most other impurity, defective etc. are greater than capture cross to the hole to the capture cross of electronics, that is to say other N type silicon of ad eundem and P type silicon, the minority carrier life time of N type silicon will be higher than P type silicon, thereby N type silicon materials battery is expected to obtain than the higher conversion efficiency of P type battery.At semicon industry, be accompanied by the generation of a lot of N type scrap silicons in the IC manufacture process, and these electron levels N type scrap silicon can become the raw material of solar cell by recovery, has expanded material source greatly.
Have only two companies successfully to commercially produce N type silicon solar cell at present in the world---the back of the body contact battery (Fig. 1) of Sunpower and the HIT battery (Fig. 2) of SANYO.The back of the body of Sunpower contact two-sided battery since its positive and negative electrode all overleaf, and the diffusion of different doping types will be carried out in the zone positive and negative electrode under, need repeatedly grow diffusion impervious layer and mask are slotted.In order to guarantee to leave between the dissimilar diffusion zones at interval, and the metal electrode in road, back is made drop in the corresponding diffusion zone, this structure is very high to the required precision of mask equipment, and needs electroplating device, and technology is very complicated.
And the HIT battery of SANYO is to carry out PECVD deposition intrinsic amorphous silicon membrane earlier on two surfaces of crystalline silicon substrate, difference PECVD deposits P type and N type hydrogenation non crystal silicon film on amorphous silicon membrane again, magnetron sputtering deposition antireflective film and conducting film then, and make positive and negative electrode by method for printing screen.From the technological process of HIT battery as can be seen, its cost had both comprised the main material in the crystal silicon cell industry--silicon material, needed to invest a series of very expensive membrane equipments again, and cost is higher.The N type battery of this two company has all reached the efficient more than 21%.But their common issue with is the technology more complicated, compares with conventional P type silicon solar cell, and cost is too high.
Summary of the invention
Battery structure of the present invention is similar to the two-sided battery of P type (Fig. 3) of Hitachi company, and it is the boron diffusion back surface field two sides battery sheet (Biafacial Cell with Boron Diffused Back Surface Field) that is called as B3 battery sheet that the two sides that Hitachi has produced in batches is subjected to the light solar cell piece.Monocrystalline silicon substrate (p type), SiO is used in the two-sided making herbs into wool of its tow sides
2Do passivation and antireflective coating.The front is phosphorous diffusion, forms the n+p knot near positive; The back side is boron diffusion p+ layer, forms BSF.The electrode of positive and negative all is that silk screen printing is made.
Because the present invention is based on N type silicon substrate, discover the two-sided oxide passivation layer structure of Hitachi and be not suitable for N type battery, therefore must study more effectively passivating structure respectively to the phosphorus expansion and the boron expansion surface of n type material.Result of study shows, with the passivation layer of SiNx film as battery front side, SiO
2(or Al
2O
3) and the SiNx duplicature as the passivation layer of cell backside, can make phosphorus expand face and boron and expand face and obtain best passivation effect respectively that simultaneously can obtain very good anti-reflection effect, conversion efficiency significantly promotes.Experiment shows, no matter is P type or N type silicon chip substrate, and this structure all is fit to.Conversion efficiency for the positive and negative of this battery structure of n type material has reached 19% and 16% respectively.
The present invention proposes a kind of method of the making high efficient two-sided N-shaped crystalline silicon solar cell based on silk-screen printing technique, for general traditional silicon solar cell production line at present, only needs to transform a little and just can upgrade to this high efficient two-sided production line for manufacturing battery.
Method based on the making high efficient two-sided N-shaped crystalline silicon solar cell of silk-screen printing technique, its processing step is: in the positive phosphorous diffusion or the local phosphorous diffusion of N type silicon chip, growth of passivation layer and anti-reflection layer, make front electrode, in the boron diffusion of N type silicon chip back, growth of passivation layer and anti-reflection layer are made backplate.
Two surfaces of battery can be the planes, also can be suede structures.
Advantage of the present invention is, adopts and the different n type material of conventional P section bar material, and other material of ad eundem, N type body life time is higher, and the conversion efficiency of battery is also higher, and does not have the shortcoming of P type battery photo attenuation.From then on the structure, two surfaces of this two-sided battery structure can both receive sunlight and be converted into electric energy, can make the whole power output of solar cell array improve 10 ~ 30%, so compare with the solar cell of single face generating, two-sided crystal-silicon solar cell has higher area specific power, gravimetric specific power, and this is even more important to reducing cost of electricity-generating.The inventive method, manufacture craft is simple, and is with low cost, most technology is made and can both be carried out on common P type production line for manufacturing battery, equipment investment is low, and the production efficiency height is to finish by process optimization, technological innovation under the condition that does not increase equipment basically.
Description of drawings
Fig. 1 is the two-sided battery structure schematic diagram of Sunpower back of the body contact, and wherein 11 is n region electrodes.The 12nd, p region electrode, the 13rd, SiO
2Perforate.
Fig. 2 is the HIT battery structure schematic diagram of SANYO.Wherein 14 is electrodes, the 15th, and nesa coating.
Fig. 3 is the two-sided battery of P type of Hitachi.
Fig. 4 is the two-sided crystal silicon cell structural representation of N type (battery front side described in this patent all refers to the N profile, and cell backside all refers to the P profile) of the inventive method preparation.Wherein: the 1st, positive silver electrode; The 2nd, front passivated reflection reducing layer (75nmSiNx); The 3rd, phosphorous diffusion zone (n
+The district); The 4th, basis material (N type silicon); The 5th, boron diffused region (p
+The district); The 6th, back side anti-reflection layer (50nmSiO
2(or Al
2O
3) and 40nmSiNx); The 7th, the back silver electrode.Specify: among Fig. 4 (A) 3,5,3 can be the emitter of even diffusion concentration among Fig. 4 (B), also can be selective emitter (referring to patent CN 101101936A).
Embodiment
Below in conjunction with drawings and Examples the present invention is described in further details.
For the two-sided battery structure shown in the accompanying drawing 4, key is the diffusion region that how to form two face different shaped layers.
For the two-sided crystal silicon cell structure of the N type shown in Fig. 4 (A), several different embodiments are arranged:
Embodiment 1:
1) remove the silicon chip affected layer, making herbs into wool,
2) front and edge diffused layer of boron are removed in boron diffusion, growth back side diffusion barrier layer,
3) barrier layer is removed in phosphorous diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 2:
1) remove the silicon chip affected layer, making herbs into wool, growth front diffusion impervious layer,
2) barrier layer is removed in boron diffusion, growth back side diffusion barrier layer,
3) barrier layer is removed in phosphorous diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 3:
1) remove the silicon chip affected layer, making herbs into wool,
2) back side and edge phosphorus-diffused layer are removed in phosphorous diffusion, growth front diffusion impervious layer,
3) barrier layer is removed in boron diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 4:
1) remove the silicon chip affected layer, making herbs into wool, growth back side diffusion barrier layer,
2) barrier layer is removed in phosphorous diffusion, growth front diffusion impervious layer,
3) barrier layer is removed in boron diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
For the two-sided crystal silicon cell structure of the N type shown in Fig. 4 (B), several different embodiments are arranged:
Embodiment 5:
1) remove the silicon chip affected layer, making herbs into wool,
2) front and edge diffused layer of boron are removed in boron diffusion, and two-sided growth diffusion impervious layer is removed front electrode window region diffusion impervious layer,
3) the front and back barrier layer is removed in phosphorous diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 6:
1) remove the silicon chip affected layer, making herbs into wool, growth front diffusion impervious layer,
2) barrier layer is removed in boron diffusion, and two-sided growth diffusion impervious layer is removed front electrode window region diffusion impervious layer,
3) the front and back barrier layer is removed in phosphorous diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 7:
1) remove the silicon chip affected layer, making herbs into wool,
2) back side, positive non-electrode window oral region and edge phosphorus-diffused layer are removed in phosphorous diffusion, growth front diffusion impervious layer,
3) barrier layer is removed in boron diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Embodiment 8:
1) remove the silicon chip affected layer, making herbs into wool, two-sided growth diffusion impervious layer are removed front electrode window region diffusion impervious layer,
2) barrier layer is removed in phosphorous diffusion, growth front diffusion impervious layer,
3) barrier layer is removed in boron diffusion, growth back side silica or aluminium oxide passivation layer, and double-sided deposition silicon nitride anti-reflection layer,
4) the positive back electrode sintering of printing.
Claims (1)
1. method based on the making high efficient two-sided N-shaped crystalline silicon solar cell of silk-screen printing technique, its processing step is: in the positive phosphorous diffusion or the local phosphorous diffusion of N type silicon chip, growth of passivation layer and anti-reflection layer, make front electrode, in the boron diffusion of N type silicon chip back, growth of passivation layer and anti-reflection layer are made backplate.
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| CN102117851A (en) * | 2011-01-13 | 2011-07-06 | 山东舜亦新能源有限公司 | N type polycrystalline silicon battery plate and production method thereof |
| CN102157571A (en) * | 2010-12-15 | 2011-08-17 | 友达光电股份有限公司 | Solar cell structure |
| CN102184985A (en) * | 2011-04-30 | 2011-09-14 | 常州天合光能有限公司 | Back face passivating structure and method for floating junction of solar cell |
| CN102201481A (en) * | 2011-06-07 | 2011-09-28 | 合肥海润光伏科技有限公司 | Novel N-type silicon hetero-junction battery with IBC (interdigitated back-contacted) structure and fabrication method thereof |
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| CN102403399A (en) * | 2011-07-30 | 2012-04-04 | 常州天合光能有限公司 | Preparation method and structure of one-film and multipurpose masked texturing solar cell |
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