CN102628179B - Seedholder and the using method of silicon single crystal is prepared for vertical pulling method - Google Patents
Seedholder and the using method of silicon single crystal is prepared for vertical pulling method Download PDFInfo
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- CN102628179B CN102628179B CN201210139199.7A CN201210139199A CN102628179B CN 102628179 B CN102628179 B CN 102628179B CN 201210139199 A CN201210139199 A CN 201210139199A CN 102628179 B CN102628179 B CN 102628179B
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Abstract
The invention discloses a kind of seedholder preparing silicon single crystal for vertical pulling method, comprise clamper, above described clamper, be provided with seed shaft coupling unit; It is characterized in that: the cavity being provided with up/down perforation in described clamper, below described cavity, be provided with silicon seed clamp port; The sidewall of described clamper is provided with the dowel hole of at least one, described dowel hole runs through the right side wall of the left side wall of clamper, cavity and clamper successively; Correspond to the shape of dowel hole, in dowel hole, be provided with steady brace, described steady brace runs through the dowel hole on the right side of dowel hole, cavity and the clamper on the left of clamper successively; The outer side wall of described clamper is provided with steady brace fixer, steady brace and clamper are fixed by described steady brace fixer.<!--1-->
Description
Technical field
The present invention relates to a kind of seedholder and the using method of preparing silicon single crystal for vertical pulling method.
Background technology
Silicon single-crystal, as a kind of semiconductor material, is mainly used in photovoltaic and semiconductor applications.Most semiconductor silicon single crystal adopts CZ(Czochralski) vertical pulling method manufacture.Manufacture in silicon single-crystal process in vertical pulling method, silicon crystal is at growth indoor growing, growth room comprises stainless steel cylinder, insulation inner core, insulation urceolus, graphite heater, quartz crucible, plumbago crucible etc., using rare gas element argon gas as shielding gas in growth room, the following manufacture method of general employing: highly purified polysilicon is loaded in quartz crucible, heat fused, then, molten silicon is slightly done and lowers the temperature, give certain condensate depression, the silicon single crystal (being called silicon seed) of a particular crystal orientation is loaded in clamper, the upper end of clamper is connected with seed shaft by connecting parts, silicon seed is fixed on clamper lower end, clamper is rotated under the drive of seed shaft, and make quartz crucible reverse rotation under the drive of graphite axis, silicon seed is slowly declined, and contact with silicon melt, then upwards silicon seed is promoted with certain speed, the object of this process mainly eliminates the dislocation defects because of thermal shocking formation in silicon seed.When silicon seed rises to certain length, by adjusting temperature and the silicon seed pulling speed upwards of melt, silicon seed being grown up, when the diameter of crystal is close to aimed dia, improving pulling speed, make single crystal be close to equal diameter growth.In the last stage of process of growth, when silicon melt residue in quartz crucible is few, improve the pulling speed of crystal, suitably increase the power of heating simultaneously, crystal is reduced gradually, thus forms a tail shape centrum, when enough hour of the point of centrum, crystal will depart from melt, thus completes the process of growth of crystal.
In czochralski silicon monocrystal manufacturing processed, need a kind of silicon single crystal having particular crystal orientation, be commonly referred to seed crystal.It is cut by the silicon single-crystal in certain crystal orientation or drilled through to form.Conventional crystal orientation is <111>, <100>, <110> etc.Seed crystal is generally right cylinder or rectangular parallelepiped, is fixed on one and is called in the workpiece of seedholder, is driven rotate and upgrade together by clamper.
In czochralski silicon monocrystal manufacturing processed, seedholder is required parts, silicon seed needs to be fixed in seedholder well, guarantee can not loosen and even come off rotating and upgrading seed crystal in seed crystal process, silicon monocrystal growth process is finally made to complete smoothly, so the structure of seedholder lower end will be closed with the matching form of clamped silicon seed.In general, seedholder is made up of metal molybdenum material or graphite, it has the connecting parts connected with seed shaft, and seedholder lower end can be used for fixing silicon seed, and its shape is according to different and different from the shape of clamped silicon seed.
Appointment single crystal orientation is departed from silicon monocrystal growth direction, is called that crystal orientation is departed from, and the degree departed from is called the crystal orientation degree of bias.First, crystal orientation degree of bias conference affects the profile of vertical pulling dislocation-free monocrystalline silicon, and crystal out of roundness is increased, thus increases the excess loss of crystal barreling; Secondly, need the adjustment crystal orientation degree of bias to reach the crystal orientation requirement of silicon chip during silicon ingot cutting on line, crystal orientation degree of bias conference affects profile and the yield rate of silicon chip; Finally, crystal orientation is departed from has very important impact to the radial resistivity evenness of silicon single-crystal.Therefore, seed crystal location for growing high-quality silicon single-crystal be very important.Our common seedholder has three kinds at present, as follows respectively:
1, a kind of silicon seed of rectangular parallelepiped is had, side, upper end has multiple breach, there is the cylinder of a vertical breach its seedholder lower end, shape matches with rectangular parallelepiped seed crystal, silicon seed is partly embedded in the lower end of clamper, the two be fixed together with metal molybdenum filament, molybdenum filament just in time enters in the breach of silicon seed, plays the effect of fixing seed crystal.When this kind of clamper is for the manufacture of major diameter high weight crystal, easily rupture in the gap portions of seed crystal, reduce the access times of seed crystal, increase cost.Simultaneously because metal molybdenum is different from the coefficient of expansion of silicon, easily cause molybdenum filament to loosen after a number of uses, affect the location of seed crystal, seed crystal even occurs time serious and comes off, thus affect growth and the quality of crystal.
What 2, use was at present the widest is a kind of right cylinder seed crystal, cylindrical side has groove, the shape of seedholder lower end is the right cylinder of hollow, wherein also there is the hole with metal molybdenum pin formed objects, right cylinder silicon seed loads the lower end of clamper from lower to upper, the groove of silicon seed is relative with clamper lateral orifices, and molybdenum pin inserts in the hole, and plays the effect of fixing silicon seed.Only fixed by steady brace between this kind of clamper and silicon seed, easily cause positioning precision low, the crystal orientation degree of bias is large, thus affects the quality of the growth of crystal.After repeatedly long crystalline substance, seed crystal is also easy to rupture at porose place, causes preparation process failure.
3, domestic patent of invention 02131185.4(day for announcing 2005.05.04) report a kind of silicon seed clamper used for monocrystalline growth with czochralski silicon, in clamper containing one up big and down small the and cavity of up/down perforation, cavity shape meets the requirement of silicon seed shape, silicon seed can inlay card in clamper, to bear the weight of the silicon single-crystal of constantly growing up.This seedholder can ensure the safe handling of silicon seed, avoids silicon seed to rupture, and greatly extends the work-ing life of seed crystal, may be used for the silicon single-crystal growing large volume, high weight.But, in Czochralski crystal growth process, seed crystal and crucible rotate in the other direction, the speed of rotation of usual seed crystal is 2 ~ 4 times of crucible rotation speed, seed crystal can produce a centrifugal inertial force under high speed rotating, seed crystal only relies on chamfered edge platform or rounding table top inlay card at seedholder internal fixtion, the power that on clamper, neither one is downward and horizontal is fixed, seed crystal is easily caused to loosen under the influence of centrifugal force, especially when the size of seed crystal and seedholder adapts to there is error, loosening meeting is easier, more severe, the stability of crystal growth and the quality of monocrystalline can be had a strong impact on.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of seedholder preparing silicon single crystal for vertical pulling method can preparing the silicon crystal of major diameter and high weight.
In order to solve the problems of the technologies described above, the invention provides a kind of seedholder and the using method of preparing silicon single crystal for vertical pulling method, comprising clamper, above described clamper, be provided with seed shaft coupling unit; Be provided with the cavity of up/down perforation in described clamper, below described cavity, be provided with silicon seed clamp port; The sidewall of described clamper is provided with the dowel hole of at least one, described dowel hole runs through the right side wall of the left side wall of clamper, cavity and clamper successively; Correspond to the shape of dowel hole, in dowel hole, be provided with steady brace, described steady brace runs through the dowel hole on the right side of dowel hole, cavity and the clamper on the left of clamper successively; The outer side wall of described clamper is provided with steady brace fixer, steady brace and clamper are fixed by described steady brace fixer.
As to the improvement preparing the seedholder of silicon single crystal for vertical pulling method of the present invention: the section of described dowel hole is right-angled trapezium, and the oblique waist of described right-angled trapezium and the angle θ of right angle waist are 0 ° ~ 90 °.
As to the further improvement preparing the seedholder of silicon single crystal for vertical pulling method of the present invention: the section of described dowel hole is rectangle.
As to the further improvement preparing the seedholder of silicon single crystal for vertical pulling method of the present invention: the side of described silicon seed clamp port and the angle α of axle are 10 ° ~ 30 °.
As to the further improvement preparing the seedholder of silicon single crystal for vertical pulling method of the present invention: the side of described silicon seed clamp port and the angle α of axle are 15 °.
As to the further improvement preparing the seedholder of silicon single crystal for vertical pulling method of the present invention: the cross section of dowel hole is rectangle, circle or Polygons.
Prepare the using method of the seedholder of silicon single crystal for vertical pulling method, silicon seed comprises in the middle part of silicon seed top, silicon seed and silicon seed bottom, silicon seed top corresponds to dowel hole and arranges silicon seed clamping hole; Loaded in cavity by silicon seed top cover, block silicon seed clamp port in the middle part of silicon seed, the below at silicon seed clamp port is exposed in silicon seed bottom; Described steady brace is successively by clamping after on the left of dowel hole, on the right side of silicon seed clamping hole and dowel hole; By steady brace fixer, steady brace and clamper are fixed again; After fixing silicon seed, by seed shaft coupling unit, the seed shaft that clamper and vertical pulling method manufacture in the single crystal growing furnace of silicon single-crystal is connected.
Of the present inventionly prepare the seedholder of silicon single crystal and using method in use for vertical pulling method, can for fix silicon seed from top to bottom, also can for fix silicon seed from top to bottom.
If adopt and fix silicon seed from top to bottom, owing to employing steady brace, silicon seed is fixed on clamper, the angle α that clamper lower end then have employed side and axle is the inverted round stage of 15 °, guarantee that silicon seed is under rotation at a high speed, be subject to downward power, and be on the inverted round stage of 15 ° at the angle α of side and axle, silicon seed can under the effect being subject to gravity, along the rounding table top auto modification position of 15 °, guarantee that the deviation control of silicon seed is in certain scope.
If adopt and fix silicon seed from top to bottom, directly silicon seed is inserted in clamper from lower, convenience very, and owing to employing steady brace, silicon seed is fixed on clamper, the angle α that clamper lower end then have employed side and axle is the round platform of 15 °, guarantee that silicon seed is when inserting clamper, orientation is correct, and at silicon seed under rotation at a high speed, after being subject to power, automatically can adjust in the round table surface that the angle α of side and axle is 15 °, guarantee that the deviation control of silicon seed is in certain scope.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Fig. 1 is the primary structure schematic diagram preparing the seedholder of silicon single crystal in embodiments of the invention 1 for vertical pulling method;
Fig. 2 be Fig. 1 actual use time structural representation;
Fig. 3 is the primary structure schematic diagram preparing the seedholder of silicon single crystal in embodiments of the invention 2 for vertical pulling method;
Fig. 4 be Fig. 3 actual use time structural representation;
Fig. 5 is the primary structure schematic diagram preparing the seedholder of silicon single crystal in embodiments of the invention 3 for vertical pulling method;
Fig. 6 be Fig. 5 actual use time structural representation;
Fig. 7 is the structural representation of the silicon seed 3 in inventive embodiment 1 and embodiment 3;
Fig. 8 is the structural representation of the silicon seed 3 in inventive embodiment 2.
Embodiment
Embodiment 1, Fig. 1 give a kind of seedholder and the using method of preparing silicon single crystal for vertical pulling method; Comprise clamper 1, the material that clamper 1 adopts is metal molybdenum or graphite; Seed shaft coupling unit 11 is fixed with in the upper end of clamper 1, seed shaft coupling unit 11 is the connecting parts (seed shaft coupling unit 11 is for the connecting parts that is threaded or sell the connecting parts connected) be connected with the seed shaft in single crystal growing furnace, and seed shaft coupling unit 11 is known technology.
The cavity 23 of up/down perforation is provided with in clamper 1, cavity 23 is that (cavity 23 can be the cavity of prism or cylindrical shape for the cavity of cylindrical shape, the cavity of cylindrical shape is) in figure of the present invention, silicon seed clamp port 22 is provided with below cavity 23, silicon seed clamp port 22 is that (silicon seed clamp port 22 can be terrace with edge, chamfered edge platform, round platform or reversed round bench shaped to reversed round bench shaped, Fig. 1, Fig. 2, Fig. 5 and Fig. 6 are reversed round bench shaped, Fig. 4 and Fig. 5 is truncated conical shape).
The limit number of above-described prism, terrace with edge or chamfered edge platform is 3 ~ 12 as well (in the present invention, limit number is 4).The side of above-described terrace with edge, chamfered edge platform, round platform or inverted round stage and the angle α of axle are 15 °.
Clamper 1 has the dowel hole 24 of at least one, dowel hole 24 laterally runs through clamper 1(from left to right and dowel hole 24 runs through from the left side sidewall of clamper 1, by running through the right sidewall of clamper 1 after cavity 23 again).
The section of dowel hole 24 is right-angled trapezium (or rectangle), the cross section of dowel hole 24 is circle (also can be circle hat or Polygons), and the sectional area of dowel hole 24 is a kind of form of gradual change from left to right (or the sectional area of dowel hole 24 is invariable).Correspond to dowel hole 24, in dowel hole 24, establish the shape of the steady brace 4(steady brace 4 matched with dowel hole 24 to be the shapes in the hole in order to meet dowel hole 24).Above-described clamper 1 outer side wall is fixed with circular steady brace fixer (steady brace fixer encloses around the outer side wall one of clamper 1), steady brace 4 and clamper 1 are fixed by steady brace fixer.
During actual use, silicon seed 3 should be sandwiched in of the present invention preparation for vertical pulling method in the seedholder of silicon single crystal.Specific as follows:
Silicon seed 3(silicon seed is existing the most frequently used silicon seed) comprise silicon seed top 31, below silicon seed top 31, to be fixed with in the middle part of silicon seed 32, in the middle part of silicon seed, to be fixed with silicon seed bottom 33 below 32; In silicon seed top 31, correspond to dowel hole 24 establishes the aperture, two ends of silicon seed clamping hole 25(silicon seed clamping hole 25 to be greater than aperture on corresponding dowel hole 24 respectively, when steady brace 4 inserts silicon seed clamping hole 25, certain adjustment space can be reserved in silicon seed top 31); Silicon seed top 31 is sleeved in cavity 23, and in the middle part of silicon seed, 32 are stuck in silicon seed clamp port 22, and silicon seed bottom 33 is exposed at the below of silicon seed clamp port 22.Silicon seed top 31 is right cylinder (or prism, mainly determine according to the shape of cavity 23), silicon seed bottom 33 is the right cylinder (or prism) less than silicon seed top 31, in the middle part of silicon seed, 32 is from the inverted round stage diminished gradually greatly (or chamfered edge platform, in the middle part of silicon seed, 32 one end be connected with silicon seed top 31 are large, and in the middle part of silicon seed, 32 one end be connected with silicon seed bottom 33 are little); The installation method of silicon seed 3 of the present invention is from top to bottom, and namely silicon seed bottom 33 is inserted from the upper end of cavity 23, until 32 snap into silicon seed clamp port 22 in the middle part of silicon seed, the upper side of dowel hole 24 is sea line or horizontal plane.
Cavity 23 shape is identical with the shape on silicon seed top 31, the shape of silicon seed clamp port 22 with in the middle part of silicon seed 32 shape identical; In the middle part of silicon seed 32 can inlay card on silicon seed clamp port 22, by the middle part of the silicon seed of cross section gradual change 32 location, location concentricity high, the crystal orientation degree of bias can reach specific requirement, favorable reproducibility.
The section of steady brace 4 is right-angled trapezium, and the oblique waist of section (i.e. right-angled trapezium) and the angle theta of right angle waist of steady brace 4 are 10 °.
The section of dowel hole 24 is a right-angled trapezium (, in upper end, oblique waist is in lower end for right angle waist), and the oblique waist of section (i.e. right-angled trapezium) of dowel hole 24 and the angle theta of right angle waist are 10 °.
Now, the cross section of dowel hole 24 can be rectangle, circle or Polygons:
When the cross section of dowel hole 24 is a rectangle, the wide of cross section (i.e. rectangle) of dowel hole 24 is invariable, and cross section (i.e. rectangle) area of dowel hole 24 diminishes from left to right gradually; Now the cross section of steady brace 4 is also rectangle, and the wide of cross section (i.e. rectangle) of steady brace 4 is invariable, and cross section (i.e. rectangle) area of steady brace 4 diminishes from left to right gradually.
The cross section of dowel hole 24 is a bowlder, and the diameter in the cross section (namely justifying) of dowel hole 24 diminishes from left to right gradually; Now the cross section of steady brace 4 is also circle, and the diameter in the cross section (namely justifying) of steady brace 4 diminishes from left to right gradually.
When the cross section of dowel hole 24 is a Polygons, the limit number in the cross section (i.e. Polygons) of dowel hole 24 is 3 ~ 12, and as well preferred limit number is 3 ~ 6, and preferred limit number is 4.The height in the cross section (i.e. Polygons) of dowel hole 24 diminishes from left to right gradually, wide the diminishing gradually from left to right in the cross section (i.e. Polygons) of dowel hole 24; Now the cross section of steady brace 4 is also the Polygons identical with the cross section of dowel hole 24, and the height in the cross section (i.e. Polygons) of steady brace 4 diminishes from left to right gradually, wide the diminishing gradually from left to right in the cross section (i.e. Polygons) of steady brace 4; It is high that the leftmost height in cross section of steady brace 4 must be greater than leftmost cross section, silicon seed top 31, the cross section of steady brace 4 is leftmost widely must be greater than leftmost cross section, silicon seed top 31 wide (time namely steady brace 4 inserts dowel hole 24, the high order end of steady brace 4 must be stuck in the high order end of dowel hole 24).
Concrete steps during actual use are:
1, silicon seed 3(to be comprised in the middle part of silicon seed top 31, silicon seed 32 and silicon seed bottom 33) cavity 23 that inserts from top to bottom, until silicon seed top 31 is sleeved in cavity 23, in the middle part of silicon seed, 32 are stuck in silicon seed clamp port 22, and silicon seed bottom 33 is exposed at the below of silicon seed clamp port 22;
2, the right angle waist of a steady brace 4 is inserted from the left end of dowel hole 24 down, pass through the right-hand member (can carry out upwards or downward fine setting silicon seed 3) of silicon seed clamping hole 25 and dowel hole 24 successively;
3, apply a power N(from the left end of steady brace 4 steady brace 4 is stuck in silicon seed clamping hole 25 and dowel hole 24);
4, use steady brace fixer by steady brace 4 banding (steady brace fixer around clamper 1 outer side wall one week, be connected and fixed at the two ends of steady brace fixer can by steady brace 4 banding);
5, be connected clamper 1 with the vertical pulling method seed shaft manufactured in the single crystal growing furnace of silicon single-crystal (by the seed shaft coupling unit 11 that clamper 1 upper end is fixing).
In order to realize object of the present invention, silicon seed 3(of the present invention and silicon seed top 31, in the middle part of silicon seed 32 and silicon seed bottom 33) fixing means be on steady brace 4, apply one use steady brace fixer by steady brace 4 banding by left-to-right power N(, the effect after applying power N can be kept for a long time), utilize the reactive force of steady brace 4 ramp make silicon seed top 31 upwards stressed N2(when silicon seed top 31 is installed from top to bottom time) or to lower stress N1(when silicon seed top 31 is for installing from top to bottom time), steady brace 4 adapts to connect with silicon seed top 31, make silicon seed top 31 lateral stressed, can not cause loosening under centrifugal inertial force effect when silicon seed top 31 rotates, even if in the middle part of above-described silicon seed 32 shape and above-described silicon seed clamp port 22 when adapting to there is error, also can correct fixing by the transverse shifting of steady brace 4, thus ensure that the fixing flexibly of silicon seed top 31, do not affect silicon seed 3(and silicon seed top 31, in the middle part of silicon seed 32 and silicon seed bottom 33) the crystal orientation degree of bias.
Embodiment 2, silicon seed top 31 are prism or right cylinder, silicon seed bottom 33 is the prism larger than silicon seed top 31 or right cylinder, in the middle part of silicon seed, 32 is become large terrace with edge or round platform (in the middle part of silicon seed, 32 one end be connected with silicon seed top 31 are little, and in the middle part of silicon seed, 32 one end be connected with silicon seed bottom 33 are large) gradually from little; Silicon seed top 31 is now inserted in cavity 23 from the below of silicon seed clamp port 22, until 32 snap into silicon seed clamp port 22 in the middle part of silicon seed.
When the installation method of silicon seed 3 of the present invention be from the bottom to top time, the downside of dowel hole 24 is sea line or horizontal plane.The section of dowel hole 24 is a right-angled trapezium (, in lower end, oblique waist is in upper end for right angle waist).The cross section of dowel hole 24 can be rectangle, circle or Polygons.Concrete is identical with embodiment 1.
Concrete steps during actual use are:
1, silicon seed 3(to be comprised in the middle part of silicon seed top 31, silicon seed 32 and silicon seed bottom 33) cavity 23 that inserts from bottom to up, until silicon seed top 31 is sleeved in cavity 23, in the middle part of silicon seed, 32 are stuck in silicon seed clamp port 22, and silicon seed bottom 33 is exposed at the below of silicon seed clamp port 22;
2, the right angle waist of a steady brace 4 is inserted from the left end of dowel hole 24 upward, pass through the right-hand member (can carry out upwards or downward fine setting silicon seed 3) of silicon seed clamping hole 25 and dowel hole 24 successively;
3, apply a power N(from the left end of steady brace 4 and steady brace 4 is stuck in silicon seed clamping hole 25 and dowel hole 24);
4, use steady brace fixer by steady brace 4 banding (steady brace fixer around clamper 1 outer side wall one week, be connected and fixed at the two ends of steady brace fixer can by steady brace 4 banding).
5, be connected clamper 1 with the vertical pulling method seed shaft manufactured in the single crystal growing furnace of silicon single-crystal (by the seed shaft coupling unit 11 that clamper 1 upper end is fixing).
Embodiment 3, when the section of dowel hole 24 is a rectangle, silicon seed clamping hole 25 section be rectangle.The height of silicon seed clamping hole 25 section must be greater than the height (when steady brace 4 inserts silicon seed clamping hole 25, certain adjustment space can be reserved in silicon seed top 31) of dowel hole 24 section.The steady brace 4 being now right-angled trapezium by two sections cooperatively interacts and to step up with dowel hole 24.The cross section of dowel hole 24 can be rectangle, circle or Polygons.Concrete is identical with embodiment 1.
Concrete steps during actual use are:
1, silicon seed 3(to be comprised in the middle part of silicon seed top 31, silicon seed 32 and silicon seed bottom 33) cavity 23 that inserts from top to bottom, until silicon seed top 31 is sleeved in cavity 23, in the middle part of silicon seed, 32 are stuck in silicon seed clamp port 22, and silicon seed bottom 33 is exposed at the below of silicon seed clamp port 22;
2, the right angle waist of a steady brace 4 is inserted from one end of dowel hole 24 down, pass through the other end (being exposed by steady brace 4 a bit at the other end of dowel hole 24) of silicon seed clamping hole 25 and dowel hole 24 successively;
3, the right angle waist of another root steady brace 4 is inserted from the other end of dowel hole 24 upward, successively by one end that silicon seed clamping hole 25 and dowel hole 24 insert in step 1;
4, exert oneself from the bottom of two steady braces 4 respectively, make two steady braces 4 be stuck in dowel hole 24 and silicon seed clamping hole 25;
5, use steady brace fixer by steady brace 4 banding (steady brace fixer around clamper 1 outer side wall one week, be connected and fixed at the two ends of steady brace fixer can by steady brace 4 banding);
6, be connected clamper 1 with the vertical pulling method seed shaft manufactured in the single crystal growing furnace of silicon single-crystal (by the seed shaft coupling unit 11 that clamper 1 upper end is fixing).
The present invention have devised a kind of seedholder and the using method of preparing silicon single crystal for vertical pulling method of special shape, silicon seed 3 is coordinated to use, the development need of semiconductor silicon material can be met, can be used for the preparation of the semiconductor grade silicon single-crystal manufacturing unicircuit and other electron component.Adopt of the present invention for vertical pulling method prepare silicon single crystal seedholder coordinate silicon seed 3 positioning precision high, the growth crystal orientation degree of bias of mounted silicon seed 3 differs very little with the particular crystal orientation degree of bias of the silicon seed 3 of preparation, deviation can control within 15 ', therefore can according to particular requirement, accurately control the crystal orientation degree of bias of crystal, improve monocrystalline quality.
Comparative example 1,1 to contrast with embodiment 2 as a comparison case with the method that the second in background technology is conventional:
The data obtained in real operation show, the particular crystal orientation degree of bias of the silicon seed 3 of preparation is between 5 ' to 10 ', after using the clamper 1 described in comparative example 1 that silicon seed 3 is installed, when clamper 1 adapts to there is error with the size of silicon seed 3 (especially after clamper 1 uses the long period), the crystal orientation degree of bias of the crystal of its growth is between 0.5 ° to 3 °, and accurately cannot control its crystal orientation degree of bias, the crystal orientation irrelevance of specification czochralski silicon monocrystal is not more than 2 ° in silicon single-crystal standard GB/T/T12962-2005.Because the degree of bias large caused conforming product rate in crystal orientation declines 2% to 10%.
The data obtained in real operation show, after using silicon seed 3 in embodiment 2 and seedholder, the crystal orientation degree of bias of the crystal of growth maintains between 5 ' to 25 '.
Comparative example 2,2 to contrast with embodiment 1 as a comparison case with the third conventional method in background technology:
Comparative example 2 is a kind of silicon seed 3 of domestic patent of invention 02131185.4 design, and its main purpose adopts inverted round stage or chamfered edge platform load, increases the monocrystalline weight that seed crystal can bear, to meet the silicon monocrystal growth needs of major diameter high weight.But, the data obtained in real operation show, after using the clamper 1 described in comparative example 2 that silicon seed 3 is installed, silicon seed 3 easily causes loosening (especially when silicon seed 3 adapts to there is error with the size of clamper 1) under the centrifugal inertial force effect of high speed rotating, and the success ratio loosening the crystal growth caused due to silicon seed 3 declines 10% to 20%.And owing to loosening the crystal orientation degree of bias of crystal that causes between 0.5 ° to 3 °, and its crystal orientation degree of bias accurately cannot be controlled, in silicon single-crystal standard GB/T/T12962-2005, the crystal orientation irrelevance of specification czochralski silicon monocrystal is not more than 2 °.Because the degree of bias large caused conforming product rate in crystal orientation declines 2% to 10%.
The data obtained in real operation show, after using silicon seed 3 in embodiment 1 and clamper 1, due to the fixed action of silicon seed top 31 and steady brace 4, even silicon seed 3 and the size of clamper 1 adapt to exist comparatively big error time, silicon seed 3 also can not cause loosening under high speed rotating, can not impact the success ratio of crystal growth.And steady brace 4 adopts inclined-plane to fix flexibly, can not affect the crystal orientation degree of bias of the crystal of growth, the crystal orientation degree of bias maintains between 5 ' to 25 '.Be applicable to the silicon monocrystal growth of major diameter high weight and the control of the crystal orientation degree of bias and monocrystalline quality thereof.
The data that above comparative example 1 and comparative example 2 obtain in real operation are by Instrument measurings such as X-ray orientation devices, and the process of mensuration is those skilled in the art known technology of one's own profession.
Finally, it is also to be noted that what enumerate above is only several specific embodiment of the present invention.Obviously, the invention is not restricted to above embodiment, many distortion can also be had.All distortion that those of ordinary skill in the art can directly derive from content disclosed by the invention or associate, all should think protection scope of the present invention.
Claims (5)
1. prepare the seedholder of silicon single crystal for vertical pulling method, comprise clamper (1), the top of described clamper (1) is provided with seed shaft coupling unit (11); It is characterized in that: the cavity (23) being provided with up/down perforation in described clamper (1), described cavity (23) below is provided with silicon seed clamp port (22);
The sidewall of described clamper (1) is provided with the dowel hole (24) of at least one, described dowel hole (24) runs through the right side wall of the left side wall of clamper (1), cavity (23) and clamper (1) from left to right successively;
Correspond to dowel hole (24), in dowel hole (24), be provided with steady brace (4), described steady brace (4) runs through the dowel hole (24) on dowel hole (24), cavity (23) and clamper (1) right side on the left of clamper (1) successively;
The outer side wall of described clamper (1) is provided with steady brace fixer, and steady brace (4) and clamper (1) are fixed by described steady brace fixer;
The described side of silicon seed clamp port (22) and the angle α of axle are 10 ° ~ 30 °;
The cross section of described dowel hole (24) is rectangle, circle or Polygons.
2. the seedholder preparing silicon single crystal for vertical pulling method according to claim 1, is characterized in that: the section of described dowel hole (24) is right-angled trapezium, and the oblique waist of described right-angled trapezium and the angle θ of right angle waist are 0 ° ~ 90 °.
3. the seedholder preparing silicon single crystal for vertical pulling method according to claim 1, is characterized in that: the section of described dowel hole (24) is rectangle.
4. the seedholder preparing silicon single crystal for vertical pulling method according to claim 2 or 3, is characterized in that: the described side of silicon seed clamp port (22) and the angle α of axle are 15 °.
5. one kind uses the method preparing the seedholder of silicon single crystal for vertical pulling method described in claim 1; It is characterized in that: silicon seed (3) comprises (32) and silicon seed bottom (33) in the middle part of silicon seed top (31), silicon seed, silicon seed top (31) correspond to dowel hole (24) and is provided with the silicon seed clamping hole (25) that can adjust up and down silicon seed (3);
Silicon seed top (31) cover is loaded in cavity (23), in the middle part of silicon seed, (32) block silicon seed clamp port (22), and silicon seed bottom (33) expose the below in silicon seed clamp port (22);
Described steady brace (4) is successively by dowel hole (24) left side, silicon seed clamping hole (25) and dowel hole (24) right side;
Described silicon seed (3) is finely tuned by the space between silicon seed clamping hole (25) and steady brace (4);
After silicon seed (3) is adjusted position, be seated steady brace (4);
Steady brace (4) is fixed by stationary installation and clamper (1);
After fixing silicon seed (3), by seed shaft coupling unit (11), the seed shaft that clamper (1) and vertical pulling method manufacture in the single crystal growing furnace of silicon single-crystal is connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210139199.7A CN102628179B (en) | 2012-05-04 | 2012-05-04 | Seedholder and the using method of silicon single crystal is prepared for vertical pulling method |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1490436A (en) * | 2002-10-15 | 2004-04-21 | 北京有色金属研究总院 | Silicon seed crystal holder for monocrystal silicon by vertical pulling process |
| CN201627000U (en) * | 2010-01-28 | 2010-11-10 | 上海杰姆斯电子材料有限公司 | Silicon seed crystal for monocrystal silicon growth by straight pull process |
| CN202047168U (en) * | 2011-04-25 | 2011-11-23 | 陕西西京电子科技有限公司 | Seed holder for monocrystalline silicon growth |
| CN202610382U (en) * | 2012-05-04 | 2012-12-19 | 杭州海纳半导体有限公司 | Seed crystal holder for preparation of monocrystalline silicon by czochralski technique |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3008396B2 (en) * | 1997-04-18 | 2000-02-14 | 住友金属工業株式会社 | Seed crystal holder |
| JPH11139896A (en) * | 1997-11-10 | 1999-05-25 | Toshiba Ceramics Co Ltd | Seed holder for pulling-up single crystal by czochralski method |
| JP2000211992A (en) * | 1999-01-21 | 2000-08-02 | Mitsubishi Materials Silicon Corp | Seed chuck pin |
| JP3700490B2 (en) * | 1999-09-09 | 2005-09-28 | 三菱住友シリコン株式会社 | Seed crystal holding device |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1490436A (en) * | 2002-10-15 | 2004-04-21 | 北京有色金属研究总院 | Silicon seed crystal holder for monocrystal silicon by vertical pulling process |
| CN201627000U (en) * | 2010-01-28 | 2010-11-10 | 上海杰姆斯电子材料有限公司 | Silicon seed crystal for monocrystal silicon growth by straight pull process |
| CN202047168U (en) * | 2011-04-25 | 2011-11-23 | 陕西西京电子科技有限公司 | Seed holder for monocrystalline silicon growth |
| CN202610382U (en) * | 2012-05-04 | 2012-12-19 | 杭州海纳半导体有限公司 | Seed crystal holder for preparation of monocrystalline silicon by czochralski technique |
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