CN201627000U - Silicon seed crystal for monocrystal silicon growth by straight pull process - Google Patents
Silicon seed crystal for monocrystal silicon growth by straight pull process Download PDFInfo
- Publication number
- CN201627000U CN201627000U CN2010203018216U CN201020301821U CN201627000U CN 201627000 U CN201627000 U CN 201627000U CN 2010203018216 U CN2010203018216 U CN 2010203018216U CN 201020301821 U CN201020301821 U CN 201020301821U CN 201627000 U CN201627000 U CN 201627000U
- Authority
- CN
- China
- Prior art keywords
- silicon seed
- silicon
- seed
- seed crystal
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The utility model discloses silicon seed crystal comprising a silicon seed crystal upper part, a silicon seed crystal middle and a silicon seed crystal lower part which are mutually connected into to a whole, wherein the silicon seed crystal upper part and the silicon seed crystal lower part are both cylinders; the silicon seed crystal middle is in an inverted platform structure; and the cross section of the silicon seed crystal upper part is larger than that of the silicon seed crystal lower part. The silicon seed crystal overcomes the disadvantages of the existing silicon seed crystal, and can largely prolong the use life of seed crystal. The seed crystal has the advantages of simple structure and low production cost. In addition, the seed crystal can be repeatedly used, so the production life of silicon crystal is also reduced, which is favorable to popularize the silicon seed crystal.
Description
Technical field
The utility model relates to a kind of vertical pulling method and prepares the used silicon seed of silicon single-crystal.
Background technology
Current preparation silicon single crystal according to the crystal growth pattern difference, can be divided into study on floating zone silicon and pulling of silicon single crystal mainly by two kinds of technology.Study on floating zone silicon is to utilize the method for floating zone melting (float zone) to prepare, so be called FZ silicon single crystal again.Pulling of silicon single crystal is to utilize czochralski therapy (czochralski) preparation, is called CZ silicon single crystal.These two kinds of silicon single crystal have different characteristics and different device application fields, study on floating zone silicon is mainly used in the high power device aspect, only account for the very little part in market, and pulling of silicon single crystal is mainly used in microelectronic integrated circuit and solar cell aspect, is the main body of silicon single crystal.
Vertical pulling method is the condensation-crystallization drive principle of utilization melt, at the solid-liquid interface place, descends by melt temperature, becomes solid-state phase change with producing by liquid transition.For the silicon single crystal rod of growth quality qualified (single crystal silicon resistivity, oxygen level and oxygen concn distribution, carbon content, metals content impurity, defective etc.), when adopting Grown by CZ Method, must consider following problem.At first being according to technical requirements, selecting to use suitable single crystal growth apparatus, secondly is preparation technology, the technology of a whole set of silicon single crystal of GPRS, comprising: the intrasystem thermal field design of (1) silicon single crystal, guarantee that crystal growth has the thermograde of reasonably stability; (2) monocrystalline silicon growing 1 intrasystem argon gas system design; (3) silicon single crystal is seized the design of technological system on both sides by the arms; (4) for the design of the continuous charging system that enhances productivity; (5) silicon single crystal preparation technology's process control.
Because the manufacturing cost of pulling of silicon single crystal is relatively low, physical strength is higher, is easy to prepare major diameter single crystal, and therefore most semiconductor silicon single crystal body adopts the vertical pulling method manufacturing.In the method for growing silicon single crystal that vertical pulling method is made; silicon crystal is grown in the growth room; the growth room comprises stainless steel cylinder; heat-preservation cylinder; graphite heater; quartz crucible; the quartz crucible supporting apparatus of graphite system etc.; silicon crystal is done shielding gas with the rare gas element argon gas when growth; the following manufacture method of general employing: polysilicon is put in the quartz crucible; heat fused; then; to melt silicon and slightly do cooling; give certain condensate depression; the silicon single crystal of a particular crystal orientation (being called seed crystal) is packed in the seedholder; the upper end of seedholder is connected with seed shaft by web member; seed crystal is fixed in the clamper lower end, and seed crystal is contacted with silicon melt, by the temperature of adjusting melt and the pulling speed that seed crystal makes progress; seed body is grown up; when the diameter of silicon crystal during near aimed dia, improve pulling speed, make the nearly permanent growth in thickness of single crystal.In the last stage of process of growth, silicon melt not completely dissolve as yet in the quartz crucible, by increasing the heat supplied in crystalline pulling speed and the quartzy crucible of adjustment, crystal is reduced gradually, thereby form a tail shape cone, when sharp enough hour of cone, crystal will break away from melt, thereby finished the crystalline process of growth.
In the czochralski silicon monocrystal manufacturing processed, need a kind of silicon single crystal that particular crystal orientation is arranged, be commonly referred to seed crystal.It is by the cutting of the silicon single-crystal in certain crystal orientation or drills through and form.Seed crystal is generally right cylinder or rectangular parallelepiped, and one or more breach are arranged above it, with pin or wire seed crystal is fixed in the workpiece that is called seedholder.Present domestic seed crystal generally adopts rectangular parallelepiped, one side has a plurality of breach in the upper end of rectangular parallelepiped, the shape of seedholder lower end matches with the rectangular parallelepiped seed crystal, seed crystal partly is embedded in the lower end of clamper, with the metal molybdenum filament the two is fixed together, molybdenum filament just in time enters in the breach of seed crystal, plays the fixedly effect of seed crystal.Domestic seed crystal and seedholder synoptic diagram are seen accompanying drawing 1.This kind crystalline method of design is fit to make the silicon crystal of minor diameter, generally can only make diameter less than 160 millimeters, and weight is no more than the silicon crystal of 60Kg.When seed crystal is used to make crystal greater than this scope, just, reduce access times easily in the gap portions fracture of seed crystal, increase cost.Because metal molybdenum is different with the coefficient of expansion of silicon, after repeatedly using, cause molybdenum filament loosening easily simultaneously, make seed crystal fall into melt, cause the preparation process failure.
American documentation literature 6,139,632 (day for announcing 2000.10.31) disclose a kind of seed crystal that pulling monocrystal is used that is used for, it is grouped into by major diameter part, middle diameter parts, a minor diameter, connect small diameter portion and major diameter part by middle diameter parts, their cross section is circle, and seedholder Ying Yuqi adapts.In the pulling process of monocrystalline, produce wearing and tearing, make to produce the gap between seed crystal and the clamper and reduce its work-ing life.
The development of semiconductor silicon material at present is very fast, and crystal develops to the direction of major diameter, high weight gradually, and diameter has been increased to 450 millimeters, and weight also surpasses 250Kg.In this case, present existing seed crystal and clamping device thereof can not meet the demands, and also dangerous, seed crystal ruptures easily, in order to reduce this situation, generally adopt every seed crystal only to use 1～5 crystal growth, have so just increased manufacturing cost.In order to satisfy and promote the development of silicon materials, need design a kind of be suitable for preparing major diameter crystal and the nonexpondable seed crystal of energy.
The utility model content
The purpose of this utility model is to overcome the deficiencies in the prior art, and a kind of not easy fracture is provided, and production cost is low, the silicon seed that can recycle.
For solving the problems of the technologies described above, the utility model adopts the basic design of technical scheme to be:
A kind of vertical pulling method prepares the employed silicon seed of silicon single crystal, this silicon seed comprises silicon seed top, silicon seed middle part and the silicon seed bottom that is connected as a single entity, described silicon seed top is right cylinder, described silicon seed middle part is a rounding platform structure, the silicon seed bottom is a right cylinder, wherein, the cross section on described silicon seed top is greater than the cross section of silicon seed bottom.
The ratio of described silicon seed upper diameter and silicon seed lower diameter is 16: 15-3: 1.
The ratio of described silicon seed upper diameter and silicon seed lower diameter is 13: 8.
The side of the rounding platform at described silicon seed middle part and the angle theta of silicon seed bottom side are 10 °-89 °.
The side of the rounding platform at described silicon seed middle part and the angle theta of silicon seed bottom side are 15 °-30 °.
The side of the rounding platform at described silicon seed middle part and the angle theta of silicon seed bottom side are 20 °.
Silicon seed disclosed in the utility model comprises silicon seed top, silicon seed middle part and the silicon seed bottom that is connected as a single entity, wherein said silicon seed top and silicon seed bottom are right cylinder, the middle part of silicon seed is a rounding platform structure, wherein, the cross section on described silicon seed top is greater than the cross section of silicon seed bottom.The ratio of this described silicon seed upper diameter and silicon seed lower diameter is 16: 15-3: 1.Preferred ratio is 13: 8.
The side of the rounding platform at silicon seed middle part and the side of silicon seed bottom form an angle theta, and this θ is 10 °-89 °, and preferred 15 °-30 °, more preferably 20 °.
During preparation silicon single crystal, earlier polysilicon is put in the quartz crucible, heat fused, then, to melt silicon and slightly do cooling, give certain condensate depression, silicon seed is positioned over the seed crystal that adapts with its structure seizes on both sides by the arms in the device, the upper end of seedholder is connected with seed shaft by web member, and seed crystal is fixed in the clamper lower end, and seed crystal is contacted with silicon melt, by the temperature of adjusting melt and the pulling speed that seed crystal makes progress, seed body is grown up, when the diameter of silicon crystal during near aimed dia, improve pulling speed, make the nearly permanent growth in thickness of single crystal.In the last stage of process of growth, silicon melt not completely dissolve as yet in the quartz crucible, by increasing the heat supplied in crystalline pulling speed and the quartzy crucible of adjustment, crystal is reduced gradually, thereby form a tail shape cone, when sharp enough hour of cone, crystal will break away from melt, thereby finished the crystalline process of growth.
Silicon seed disclosed in the utility model has overcome the deficiency of existing seed crystal, can prolong the work-ing life of seed crystal greatly, and this seed crystal is simple in structure, production cost is low, and in addition, seed crystal can the repeated multiple times utilization, also reduce the production cost of silicon crystal, helped applying of this silicon seed.
Description of drawings
Fig. 1 is the synoptic diagram that existing seed crystal and seed crystal are seized device on both sides by the arms
Fig. 2 is the synoptic diagram that the utility model seed crystal and seed crystal are seized device on both sides by the arms
Fig. 3 is the utility model seed crystal stereographic map
Fig. 4 is the sectional view of Fig. 3
1 is that seed crystal 2 is that silicon seed bottom 7 for seize device 8 for seize device for silicon seed top 5 for silicon seed middle part 6 for seizing device 4 on both sides by the arms for molybdenum pin 3 among the figure
Embodiment
Below in conjunction with embodiment the utility model is described in more detail.
Silicon seed as shown in Figure 3, this silicon seed comprises silicon seed top 4, silicon seed middle part 5 and the silicon seed bottom 6 that is connected as a single entity, wherein said silicon seed top 4 is wherein a kind of of right cylinder or prism, described silicon seed middle part 5 is a rounding platform structure, silicon seed bottom 6 is a right cylinder, wherein, the cross section on described silicon seed top 4 is greater than the cross section of silicon seed bottom 6.
Silicon seed as shown in Figure 4, these silicon seed top 4 diameters are 7.2mm, silicon seed bottom 6 diameters are 6mm.The rounding platform side at silicon seed middle part 5 and the angle theta of silicon seed bottom 6 sides are 20 °.
Embodiment 2
Silicon seed as shown in Figure 3, this silicon seed comprises silicon seed top 4, silicon seed middle part 5 and the silicon seed bottom 6 that is connected as a single entity, wherein said silicon seed top 4 is wherein a kind of of right cylinder or prism, described silicon seed middle part 5 is a rounding platform structure, silicon seed bottom 6 is a right cylinder, wherein, the cross section on described silicon seed top 4 is greater than the cross section of silicon seed bottom 6.
Silicon seed as shown in Figure 4, these silicon seed top 4 diameters are 11mm, silicon seed bottom 6 diameters are 9mm.The rounding platform side at silicon seed middle part 5 and the angle theta of silicon seed bottom side are 30 °.
Silicon seed as shown in Figure 3, this silicon seed comprises silicon seed top 4, silicon seed middle part 5 and the silicon seed bottom 6 that is connected as a single entity, wherein said silicon seed top 4 is wherein a kind of of right cylinder or prism, described silicon seed middle part 5 is a rounding platform structure, silicon seed bottom 6 is a right cylinder, wherein, the cross section on described silicon seed top 4 is greater than the cross section of silicon seed bottom 6.
Silicon seed as shown in Figure 4, these silicon seed top 4 diameters are 13mm, silicon seed bottom 6 diameters are 8mm.The rounding platform side at silicon seed middle part 5 and the angle theta of silicon seed bottom 6 sides are 45 °.
Silicon seed as shown in Figure 3, this silicon seed comprises silicon seed top 4, silicon seed middle part 5 and the silicon seed bottom 6 that is connected as a single entity, wherein said silicon seed top 4 is wherein a kind of of right cylinder or prism, described silicon seed middle part 5 is a rounding platform structure, silicon seed bottom 6 is a right cylinder, wherein, the cross section on described silicon seed top 4 is greater than the cross section of silicon seed bottom 6.
Silicon seed as shown in Figure 4, these silicon seed top 4 diameters are 14mm, silicon seed bottom 6 diameters are 12mm.The rounding platform side at silicon seed middle part 5 and the angle theta of silicon seed bottom 6 sides are 10 °.
Silicon seed as shown in Figure 3, this silicon seed comprises silicon seed top 4, silicon seed middle part 5 and the silicon seed bottom 6 that is connected as a single entity, wherein said silicon seed top 4 is wherein a kind of of right cylinder or prism, described silicon seed middle part 5 is a rounding platform structure, silicon seed bottom 6 is a right cylinder, wherein, the cross section on described silicon seed top 4 is greater than the cross section of silicon seed bottom 6.
Silicon seed as shown in Figure 4, these silicon seed top 4 diameters are 14mm, silicon seed bottom 6 diameters are 7mm.The rounding platform side at silicon seed middle part 5 and the angle theta of silicon seed bottom 6 sides are 60 °.
Silicon seed as shown in Figure 3, this silicon seed comprises silicon seed top 4, silicon seed middle part 5 and the silicon seed bottom 6 that is connected as a single entity, wherein said silicon seed top 4 is wherein a kind of of right cylinder or prism, described silicon seed middle part 5 is a rounding platform structure, silicon seed bottom 6 is a right cylinder, wherein, the cross section on described silicon seed top 4 is greater than the cross section of silicon seed bottom 6.
Silicon seed as shown in Figure 4, these silicon seed top 4 diameters are 8mm, silicon seed bottom 6 diameters are 7.5mm.The rounding platform side at silicon seed middle part 5 and the angle theta of silicon seed bottom 6 sides are 20 °.
Embodiment 7
Silicon seed as shown in Figure 3, this silicon seed comprises silicon seed top 4, silicon seed middle part 5 and the silicon seed bottom 6 that is connected as a single entity, wherein said silicon seed top 4 is wherein a kind of of right cylinder or prism, described silicon seed middle part 5 is a rounding platform structure, silicon seed bottom 6 is a right cylinder, wherein, the cross section on described silicon seed top 4 is greater than the cross section of silicon seed bottom 6.
Silicon seed as shown in Figure 4, these silicon seed top 4 diameters are 15mm, silicon seed bottom 6 diameters are 5mm.The rounding platform side at silicon seed middle part 5 and the angle theta of silicon seed bottom 6 sides are 89 °.
Embodiment in the foregoing description can further make up or replace; and embodiment is described preferred embodiment of the present utility model; be not that design of the present utility model and scope are limited; under the prerequisite that does not break away from the utility model design philosophy; the various changes and modifications that the professional and technical personnel makes the technical solution of the utility model in this area all belong to protection domain of the present utility model.
Claims (6)
1. a vertical pulling method prepares the employed silicon seed of silicon single crystal, it is characterized in that described silicon seed comprises silicon seed top (4), the silicon seed middle part (5) and silicon seed bottom (6) that is connected as a single entity, described silicon seed top (4) is right cylinder, described silicon seed middle part (5) is a rounding platform structure, silicon seed bottom (6) is a right cylinder, wherein, the cross section on described silicon seed top (4) is greater than the cross section of silicon seed bottom (6).
2. silicon seed according to claim 1 is characterized in that: the ratio of described silicon seed top (4) diameter and silicon seed bottom (6) diameter is 16: 15-3: 1.
3. silicon seed according to claim 2 is characterized in that: the ratio of described silicon seed top (4) diameter and silicon seed bottom (6) diameter is 13: 8.
4. silicon seed according to claim 1 is characterized in that: the side of the rounding platform at described silicon seed middle part (5) and the angle theta of silicon seed bottom (6) side are 10 °-89 °.
5. silicon seed according to claim 4 is characterized in that: the side of the rounding platform at described silicon seed middle part (5) and the angle theta of silicon seed bottom (6) side are 15 °-30 °.
6. silicon seed according to claim 5 is characterized in that: the side of the rounding platform at described silicon seed middle part (5) and the angle theta of silicon seed bottom (6) side are 20 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010203018216U CN201627000U (en) | 2010-01-28 | 2010-01-28 | Silicon seed crystal for monocrystal silicon growth by straight pull process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010203018216U CN201627000U (en) | 2010-01-28 | 2010-01-28 | Silicon seed crystal for monocrystal silicon growth by straight pull process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201627000U true CN201627000U (en) | 2010-11-10 |
Family
ID=43058393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010203018216U Expired - Fee Related CN201627000U (en) | 2010-01-28 | 2010-01-28 | Silicon seed crystal for monocrystal silicon growth by straight pull process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201627000U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628179A (en) * | 2012-05-04 | 2012-08-08 | 杭州海纳半导体有限公司 | Seed crystal holder for producing monocrystalline silicon by straight-pulling method and usage thereof |
| CN106222738A (en) * | 2016-08-24 | 2016-12-14 | 包头市山晟新能源有限责任公司 | A kind of preparation method of n type single crystal silicon growth seed crystal |
| CN109338462A (en) * | 2018-12-07 | 2019-02-15 | 内蒙古中环协鑫光伏材料有限公司 | A kind of pulling of crystals variable diameter seed crystal and seeding methods |
-
2010
- 2010-01-28 CN CN2010203018216U patent/CN201627000U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102628179A (en) * | 2012-05-04 | 2012-08-08 | 杭州海纳半导体有限公司 | Seed crystal holder for producing monocrystalline silicon by straight-pulling method and usage thereof |
| CN102628179B (en) * | 2012-05-04 | 2015-12-16 | 杭州海纳半导体有限公司 | Seedholder and the using method of silicon single crystal is prepared for vertical pulling method |
| CN106222738A (en) * | 2016-08-24 | 2016-12-14 | 包头市山晟新能源有限责任公司 | A kind of preparation method of n type single crystal silicon growth seed crystal |
| CN109338462A (en) * | 2018-12-07 | 2019-02-15 | 内蒙古中环协鑫光伏材料有限公司 | A kind of pulling of crystals variable diameter seed crystal and seeding methods |
| CN109338462B (en) * | 2018-12-07 | 2023-12-01 | 内蒙古中环晶体材料有限公司 | Diameter-variable seed crystal for Czochralski single crystal and seeding method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102041550A (en) | Method for prolonging service life of single crystal furnace thermal field crucible, and Czochralski crystal growing furnace | |
| TW201619453A (en) | Device for moving small insulating plate at bottom of polycrystalline silicon ingot furnace and polycrystalline silicon ingot furnace | |
| CN204825129U (en) | Thermal field structure of high -efficient polycrystalline silicon ingot furnace | |
| CN102260900B (en) | Device for improving consistency of longitudinal resistivity of single crystal silicon and treatment process thereof | |
| CN109338462A (en) | A kind of pulling of crystals variable diameter seed crystal and seeding methods | |
| CN108842179A (en) | A method of setting 3 twin boundary of Σ prepares twin crystal to polycrystalline silicon ingot casting | |
| CN103806101A (en) | Growth method and equipment of square sapphire crystal | |
| CN102828231A (en) | Methods for manufacturing Mono-like ingot and seed crystal of Mono-like ingot | |
| CN201627000U (en) | Silicon seed crystal for monocrystal silicon growth by straight pull process | |
| CN201183846Y (en) | Thermal field structure of polycrystalline silicon casting furnace | |
| CN203393257U (en) | Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot | |
| CN102206855A (en) | Czochralski crystal grower graphite crucible | |
| CN201634792U (en) | Straight-pull single crystal furnace | |
| CN201634795U (en) | Czochralski crystal furnace graphite crucible | |
| CN102719881A (en) | Graphite crucible for single crystal furnace | |
| CN102732943A (en) | Method for producing monocrystalline silicon cast ingot | |
| CN203602749U (en) | Heating coil for drawing six-inch zone-molten silicon single crystal | |
| CN106149047A (en) | Single crystal growing furnace | |
| CN108823638A (en) | The preparation method of large scale silicon ingot used for solar batteries | |
| CN2578342Y (en) | Seed crystal holder for monocrystal silicon growth by straight pull process | |
| CN201990762U (en) | Heating device of czochralski single crystal furnace | |
| CN201183847Y (en) | Thermal field structure of polycrystalline silicon casting furnace having one layer of heat preservation strip | |
| CN101724889A (en) | System for thermal field of straight pulling silicon single crystal furnace | |
| CN201648562U (en) | Czochralski silicon furnace device | |
| CN106119956A (en) | A kind of polysilicon fritting casting ingot method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101110 Termination date: 20160128 |
|
| EXPY | Termination of patent right or utility model |