CN214422780U - Zone-melting seed crystal clamp - Google Patents
Zone-melting seed crystal clamp Download PDFInfo
- Publication number
- CN214422780U CN214422780U CN202120282466.0U CN202120282466U CN214422780U CN 214422780 U CN214422780 U CN 214422780U CN 202120282466 U CN202120282466 U CN 202120282466U CN 214422780 U CN214422780 U CN 214422780U
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- CN
- China
- Prior art keywords
- seed crystal
- holder
- zone
- melting
- cylindrical cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 title claims abstract description 90
- 238000004857 zone melting Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 abstract description 13
- 238000010899 nucleation Methods 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000008569 process Effects 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000005674 electromagnetic induction Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202120282466.0U CN214422780U (en) | 2021-02-01 | 2021-02-01 | Zone-melting seed crystal clamp |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202120282466.0U CN214422780U (en) | 2021-02-01 | 2021-02-01 | Zone-melting seed crystal clamp |
Publications (1)
Publication Number | Publication Date |
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CN214422780U true CN214422780U (en) | 2021-10-19 |
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ID=78070021
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202120282466.0U Active CN214422780U (en) | 2021-02-01 | 2021-02-01 | Zone-melting seed crystal clamp |
Country Status (1)
Country | Link |
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CN (1) | CN214422780U (en) |
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2021
- 2021-02-01 CN CN202120282466.0U patent/CN214422780U/en active Active
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Legal Events
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GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee after: Zhonghuan Leading Semiconductor Technology Co.,Ltd. Country or region after: China Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 214200 Dongjia Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Patentee before: Zhonghuan leading semiconductor materials Co.,Ltd. Country or region before: China Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
CP03 | Change of name, title or address |