CN102549636A - 薄膜晶体管阵列装置、薄膜晶体管阵列装置的制造方法 - Google Patents
薄膜晶体管阵列装置、薄膜晶体管阵列装置的制造方法 Download PDFInfo
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- CN102549636A CN102549636A CN2010800028825A CN201080002882A CN102549636A CN 102549636 A CN102549636 A CN 102549636A CN 2010800028825 A CN2010800028825 A CN 2010800028825A CN 201080002882 A CN201080002882 A CN 201080002882A CN 102549636 A CN102549636 A CN 102549636A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
- H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2010/005719 WO2012039000A1 (ja) | 2010-09-21 | 2010-09-21 | 薄膜トランジスタアレイ装置、薄膜トランジスタアレイ装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102549636A true CN102549636A (zh) | 2012-07-04 |
CN102549636B CN102549636B (zh) | 2016-08-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201080002882.5A Active CN102549636B (zh) | 2010-09-21 | 2010-09-21 | 薄膜晶体管阵列装置、薄膜晶体管阵列装置的制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8487395B2 (zh) |
JP (1) | JP5579173B2 (zh) |
KR (1) | KR101671038B1 (zh) |
CN (1) | CN102549636B (zh) |
WO (1) | WO2012039000A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107636831A (zh) * | 2015-06-04 | 2018-01-26 | 夏普株式会社 | 光电传感器基板 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5271172B2 (ja) * | 2009-06-26 | 2013-08-21 | 三菱電機株式会社 | 画像表示素子及びその製造方法 |
WO2011148424A1 (ja) | 2010-05-27 | 2011-12-01 | パナソニック株式会社 | 表示装置用薄膜半導体装置、表示装置及び表示装置用薄膜半導体装置の製造方法 |
CN102934153B (zh) | 2010-09-29 | 2015-10-21 | 株式会社日本有机雷特显示器 | 显示装置用薄膜半导体装置、显示装置用薄膜半导体装置的制造方法、el显示面板及el显示装置 |
JP5798626B2 (ja) | 2011-08-03 | 2015-10-21 | パナソニック株式会社 | 表示パネル装置及びその製造方法 |
CN103155019B (zh) * | 2011-09-30 | 2016-01-20 | 株式会社日本有机雷特显示器 | 薄膜晶体管阵列装置、el显示面板、el显示装置、薄膜晶体管阵列装置的制造方法以及el显示面板的制造方法 |
US9153628B2 (en) | 2012-02-08 | 2015-10-06 | Joled Inc. | Display panel having an inter-layer insulation layer with planar and protruding regions |
US8658444B2 (en) | 2012-05-16 | 2014-02-25 | International Business Machines Corporation | Semiconductor active matrix on buried insulator |
CN106165053A (zh) * | 2014-01-29 | 2016-11-23 | 株式会社岛津制作所 | 金属电极、使用有所述金属电极的电子枪、电子管及x射线管 |
JP6398203B2 (ja) * | 2014-01-29 | 2018-10-03 | サンケン電気株式会社 | 半導体装置 |
KR20150137214A (ko) * | 2014-05-28 | 2015-12-09 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 및 그 제조방법 |
JP2018120123A (ja) * | 2017-01-26 | 2018-08-02 | 株式会社ジャパンディスプレイ | 表示装置及び基板間導通構造 |
JP7256622B2 (ja) * | 2018-09-26 | 2023-04-12 | 株式会社ジャパンディスプレイ | 表示装置 |
CN113632232A (zh) * | 2020-01-22 | 2021-11-09 | 京东方科技集团股份有限公司 | 驱动背板及其制备方法、显示面板、显示装置 |
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JP2000276078A (ja) * | 1999-03-23 | 2000-10-06 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス表示装置 |
JP2004111082A (ja) * | 2002-09-13 | 2004-04-08 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置及びエレクトロルミネッセンス表示装置のパターンレイアウト方法 |
JP2004311418A (ja) * | 2003-03-25 | 2004-11-04 | Semiconductor Energy Lab Co Ltd | 表示装置およびその作製方法 |
CN1577017A (zh) * | 2003-07-28 | 2005-02-09 | 三菱电机株式会社 | 薄膜晶体管阵列衬底的制造方法 |
JP2005301162A (ja) * | 2004-04-16 | 2005-10-27 | Mitsubishi Electric Corp | 表示装置とその製造方法 |
CN1750270A (zh) * | 2004-09-16 | 2006-03-22 | 松下电器产业株式会社 | 半导体器件 |
JP2009128577A (ja) * | 2007-11-22 | 2009-06-11 | Hitachi Ltd | 有機発光表示装置 |
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JP3227980B2 (ja) | 1994-02-23 | 2001-11-12 | ソニー株式会社 | 多結晶シリコン薄膜形成方法およびmosトランジスタのチャネル形成方法 |
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TW594637B (en) | 2002-09-13 | 2004-06-21 | Sanyo Electric Co | Electroluminescence display device and method of pattern layout for the electroluminescence display device |
TWI353467B (en) * | 2003-01-08 | 2011-12-01 | Samsung Electronics Co Ltd | Polysilicon thin film transistor array panel and m |
US7057208B2 (en) | 2003-03-25 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
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JP4974500B2 (ja) | 2004-09-15 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 半導体装置、モジュール及び電子機器 |
JP4801407B2 (ja) | 2004-09-30 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
JP5092306B2 (ja) * | 2006-08-02 | 2012-12-05 | ソニー株式会社 | 表示装置および画素回路のレイアウト方法 |
JP4168292B2 (ja) | 2006-09-11 | 2008-10-22 | ソニー株式会社 | 表示装置及び表示用薄膜半導体装置 |
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2010
- 2010-09-21 CN CN201080002882.5A patent/CN102549636B/zh active Active
- 2010-09-21 WO PCT/JP2010/005719 patent/WO2012039000A1/ja active Application Filing
- 2010-09-21 JP JP2011514990A patent/JP5579173B2/ja active Active
- 2010-09-21 KR KR1020117008145A patent/KR101671038B1/ko active IP Right Grant
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2011
- 2011-09-28 US US13/247,254 patent/US8487395B2/en active Active
Patent Citations (7)
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JP2000276078A (ja) * | 1999-03-23 | 2000-10-06 | Sanyo Electric Co Ltd | 有機エレクトロルミネッセンス表示装置 |
JP2004111082A (ja) * | 2002-09-13 | 2004-04-08 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置及びエレクトロルミネッセンス表示装置のパターンレイアウト方法 |
JP2004311418A (ja) * | 2003-03-25 | 2004-11-04 | Semiconductor Energy Lab Co Ltd | 表示装置およびその作製方法 |
CN1577017A (zh) * | 2003-07-28 | 2005-02-09 | 三菱电机株式会社 | 薄膜晶体管阵列衬底的制造方法 |
JP2005301162A (ja) * | 2004-04-16 | 2005-10-27 | Mitsubishi Electric Corp | 表示装置とその製造方法 |
CN1750270A (zh) * | 2004-09-16 | 2006-03-22 | 松下电器产业株式会社 | 半导体器件 |
JP2009128577A (ja) * | 2007-11-22 | 2009-06-11 | Hitachi Ltd | 有機発光表示装置 |
Cited By (1)
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CN107636831A (zh) * | 2015-06-04 | 2018-01-26 | 夏普株式会社 | 光电传感器基板 |
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JPWO2012039000A1 (ja) | 2014-02-03 |
JP5579173B2 (ja) | 2014-08-27 |
WO2012039000A1 (ja) | 2012-03-29 |
US8487395B2 (en) | 2013-07-16 |
KR20130055490A (ko) | 2013-05-28 |
US20120074422A1 (en) | 2012-03-29 |
KR101671038B1 (ko) | 2016-10-31 |
CN102549636B (zh) | 2016-08-03 |
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