CN102449554A - 用于清除有机物的组合物和方法 - Google Patents
用于清除有机物的组合物和方法 Download PDFInfo
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- CN102449554A CN102449554A CN2010800237981A CN201080023798A CN102449554A CN 102449554 A CN102449554 A CN 102449554A CN 2010800237981 A CN2010800237981 A CN 2010800237981A CN 201080023798 A CN201080023798 A CN 201080023798A CN 102449554 A CN102449554 A CN 102449554A
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Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
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- C11D3/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/43—Solvents
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
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- C11D7/5022—Organic solvents containing oxygen
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
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- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
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- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
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Abstract
本发明提供可用于从基板(例如电子设备基板比如微电子晶片或平板显示器)清除有机物的组合物和方法。本发明介绍了一种方法,该方法将最小体积组合物作为涂层施用于无机基板,借以加入足够热量并立即用水漂洗以实现完全清除。这些组合物和方法特别适合从电子设备清除和完全溶解正性和负性种类的光刻胶以及热固性聚合物。
Description
发明领域
本发明总的涉及从基板(substrate)清除有机物。特别地,本发明涉及具有一定范围的组合物的通用方法,将其用于清除电子设备比如半导体晶片和平板显示器(FPD)及其它微电子基板的非晶态和热固性聚合物两者。
背景
各种聚合物用于制造电子设备,包括光刻胶和有机基电介质。例如,光刻胶在光刻法操作中的整个半导体设备制造中使用。抗蚀剂(resist)通过光掩模暴露于光化辐射。当使用正性抗蚀剂时,暴露引起材料内化学反应,导致在含水的碱中的溶解度增加,让其溶解并随显影剂洗掉。在负性材料的情况下,在暴露区发生聚合物的交联,而剩下未暴露区不变。通过合适的显影化学剂将未暴露区溶出(dissolution)和漂洗。在显影后,留下抗蚀剂掩模。抗蚀剂掩模的设计和几何学取决于抗蚀剂是正性或负性性质(tone);正性性质抗蚀剂将匹配光掩模的设计,而负性性质抗蚀剂将提供与光掩模设计相反的图案。使用光刻胶需要几个清洁步骤,在实施下一个电路设计过程步骤之前将掩模最后清洁。
有机基电介质代表用于为微电子电路提供绝缘性质的工程聚合物。这些化学剂的实例包括聚酰亚胺(PI)和聚-(对亚苯基-2,6-苯并双噁唑)(PBO),由Hitachi-DuPont Microsystems制造。另一种用于电子应用的常用有机绝缘体是双苯并环丁烯(BCB),由美国Dow ChemicalCompany制造。将这些聚合物以类似方式作为光刻胶使用常规旋转、喷射施用于基板,或者可将它们按照制造FPD的惯例缝涂(slit-coated)。由于这些应用原因,有机基电介质经常可称为旋压(spin-on)电介质。一旦施用聚合物,它们可经历图案形成(patterning)过程,但最终所有这些体系都导致末期(fina-stage)固化,通过经历化学和物理性质改变而永久地将材料固定在位置上。最终的材料呈现对电路性能而言期望的电和物理性质两者。一旦这些有机基电介质完全固化,它们将被视为永久的,因此返工(rework)的需求将要求使用侵蚀性材料比如可能攻击基板或相邻金属的强酸或碱,或者更实际地讲,返工情况将被视为在商业上不可用。
正性光刻胶通常基于酚醛清漆(novolac)或聚羟基苯乙烯(Phost)种类的树脂,它们被选择用于前端(front-end)半导体和平板显示器制造的高分辨率设备加工。正性性质体系代表全球生产的光刻胶的最大体积部分,有许多供应商。用于半导体和FPD两者的这些体系的实例供应商包括美国AZ Electronic Materials、美国Rohm and Haas Corporation和日本公司Tokyo Ohka Kogyo Co Ltd。在正性光刻胶应用中,将基板用等离子方法刻蚀,所述方法用惰性气体和化学剂种类产生穿过掩模并刻蚀到基板内的既离子化又反应性的物种(specy)。在刻蚀过程中,离子化和反应性物种与基板的原子组合,形成副产物,该副产物经过等离子体系减压排出。这些相同的气态物种也影响光刻胶掩模,将其烘烤到位置中,还将含碳副产物喷入等离子体内。光刻胶副产物与等离子体中其它物种混合,连续向下导向基板。这些材料冷凝以沿着刻蚀特征的侧壁形成残留物,产生期望的状态,另外称为各向异性刻蚀,从而使物种高度受控和导入基板内,侧面损失很少或没有。完成后,期望连同抗蚀剂掩模清除该刻蚀残留物,因为它们可对后续过程具有有害效果,导致设备性能下降或设备故障。但是,此类残留物及其关联的抗蚀剂掩模会难以清除,通常包括使用配制的剥离化学剂。
通常选择负性光刻胶用于更严格的过程条件,从而可使用更具侵蚀性的化学或热暴露过程。这些负性光刻胶包括异戊二烯(橡胶)、丙烯酸和环氧基树脂。因其高化学抗性而选择环化异戊二烯(橡胶)光刻胶。这些光刻胶的实例可从Fujifilm Electronic Materials,Ltd.获得,商品名为SC-Resist或HNR-Resist。负性性质异戊二烯树脂抗蚀剂常见于铝加工,其中用简单的化学刻蚀清除掩蔽特征周围的金属。负性性质丙烯酸光刻胶通常被选择用于晶片级包装凸点形成。对于干膜和旋压(湿)负性丙烯酸,供应商分别包括E.I.duPont de Nemours andCompany的美国Printed Circuits Division(商品名为Riston)和日本JSRCorporation。干膜和旋压丙烯酸提供沉积25-120微米(um)厚层的能力,用于形成相应焊料凸点的图案。一旦图案形成,通过电镀或丝网印刷发生金属沉积,这是使抗蚀剂分别暴露于加热的酸或在超过250℃烘烤的过程。另一种普遍的负性抗蚀剂,商品名为SU-8TM的环氧体系,最初由International Business Machines(IBM)开发,现在由美国公司MicroChem Corporation和瑞士公司Gersteltec Engineering Solutions销售。通常选择SU-8TM,因为可超过300微米(um)的厚图案、高的高宽比(即高度vs宽度)和呈现非常直的侧壁的图案定义。因为SU-8TM环氧树脂非常独特的特征,所以选择这种光刻胶制造大型设备,最通常包括微电子机械***(MEMS)。各种负性性质光刻胶明显不同于正性,它们的清洁(清除)实践甚至更严格。事实上,通常理解SU-8TM光刻胶视为永久性体系,只能用更复杂、更多时间和昂贵的实践来清除。
作为涉及光刻法的任何过程,期望完全清除基板的光刻胶以成功地进行至下一过程。光刻胶的不完全剥离可导致下一刻蚀或沉积步骤过程中的不规则,这可引起质量和收率问题。例如,在焊料凸点过程中,抗蚀剂污染可阻止金属焊料在板组件回熔焊接过程中润湿成为金属焊盘,导致最终组件的收率损失。相同的光刻胶污染表现为线路设备图案形成前端的有机污染,导致在刻蚀或沉积过程中完全相同的不润湿问题。这样的不规则,无论多小,都在整个制造中持续将问题放大,直至最终的设备组装和测试过程,这个情况导致差的机械和电接触,产生高电阻和热量,或者更坏的是灾难性电短路。
在每种这些化学过程中,可以理解,必须没有故障地满足在清洁方面的最大选择性和高生产量。与性能的缺乏、残留物的存在或者更坏的是过程复杂性提高关联的任何问题,全部将导致收率减小和成本增加。
一般理解正性性质抗蚀剂的化学剂典型地是亲水(极性)和非晶态的(即非热固性和交联的),由于这些原因,所以据信用常规溶剂和/或化学剥离剂更容易清洁(清除)这些体系。用于正性性质化学剂的树脂基于酚醛清漆(甲酚、苯酚-甲醛)或聚羟基苯乙烯(PHost),偶然选择苯乙烯化共聚物和/或丙烯酸/PMMA(聚甲基丙烯酸甲酯)。这些化学剂提供好的粘合性并固定于多种表面,而存在于各种形式酚醛清漆(即甲酚、双酚等)中的羟基提供有助于水溶性的分子间氢键。这种情况在酚醛清漆体系中的引发剂重氮萘醌(DNQ)的光转化过程中组合,而在PHost体系中,酯的酸催化的脱保护形成更可溶的醇。当在至多且包括100摄氏度正常操作情况过程中使用时,这些体系在极性溶剂中保持溶解,而它们的UV-暴露将产生溶于含水碱的相应物。
如本文指出,正性性质抗蚀剂用作等离子基刻蚀的主(primary)成像掩模。在此过程中,当掩模暴露于超过150摄氏度的温度时在等离子中的物种产生刻蚀残留物。众所周知刻蚀残留物(如侧壁聚合物)包含等离子与光刻胶有机成分的副产物。残留物的化学剂可包含基板的成分、金属形貌(topography)和等离子气体,包括含硅、镓、砷、硼、磷酸盐、钛、钽、钨、铜、镍、铝、铬、氟、氯以及含碳化合物。在含有羟基成分的酚醛清漆体系中,这些提高的温度暴露条件将促使进一步反应以形成不溶性物种。羟基与卤化物和活性金属(尤其在等离子的加热和酸性条件下)产生烷基卤、酯和一些情况下高分子量聚合物的此类反应性是已知的(Morrison,R.T.和Boyd,R.N.,Organic Chemistry,第三版,Allyn & Bacon,Inc.,Boston MA,Ch.16(1973))。从热等离子刻蚀的效果产生的刻蚀残留物和过度暴露的光刻胶掩模的常规清洁需要使用化学剥离剂,该化学剥离剂根据过程和工具在提高的温度下加工一段延长的时间。
用于预测大量(bulk)树脂的剥离难题的典型测量包括热分析测定玻璃化转变(Tg)。相对无变化的Tg值见于正性性质光刻胶和类似的非晶态体系(Fedynyshyn,T.等,Proc.SPIE 6519,65197-1(2007))。已观察到,在光刻胶中可检测的Tg增加为在溶剂中蒸发损失的函数,这转而将取决于光刻胶涂层的厚度。在聚合物交联的辐射和热暴露时观察到最明显的Tg增加(J.D.D′Amour等,Proc.SPIE 5039,966(2003))。高温暴露的酚醛清漆树脂与负性性质体系的此类交联与较高分子量物种的存在(可通过Tg值增加检测)相符。
光刻胶刻蚀残留物和掩模的清洁(清除)使用复杂的化学剥离剂,它由有机溶剂、胺、水、还原剂、螯合剂、腐蚀抑制剂和表面活性剂组成。还原剂羟胺作为碱性材料已被广泛引用于文献中,它促使光刻胶及其残留物的溶出,同时提供对下面的铝金属特征的保护。使用剥离化学剂的惯例包括将大体积剥离剂在具体温度下递送至待清洁基板一段给定的时间。
随着工业界持续用铜代替铝以获得其设备的改良的性能,剥离化学剂也必须调整。羟胺可被接受用于铝设备的清洁;但是,它对铜太具有侵蚀性。使用铜和低-K(介电常数,K)的设备结构,如Cu/Low-K,需要氟化基化学剂以清除硅负载的刻蚀残留物。胺和氨化合物已知是Cu的络合剂,并观察了刻蚀(攻击)铜金属。另外,氟化和二醇基剥离化学剂被视为有毒和呈现提高的粘度。
用于形成晶片凸点金属化掩模的负性光刻胶一般包括丙烯酸、苯乙烯、马来酸酐或相关单体和共聚物。此类材料用于制备光敏性厚膜。由于聚合物主链上的悬挂基团(它包括对于丙烯酸常见的乙烯基),这些光刻胶常称为“丙烯酸”聚合物体系。一般来讲,在需要暴露于严格的过程情况时,选择丙烯酸光刻胶的干膜形式。由于这种暴露,干膜掩模和残留物的清洁存在剥离难题。当清除干膜体系时,材料典型地不溶解。而是,许多化学剥离剂与材料相互作用引起从基板掀起或剥落,导致产生悬浮的不溶性薄片和微粒。此类不溶性材料可导致加工工具的过滤器污染和性能下降。这可因为加工工具维护停工期而使生产率明显损失。此外,不能滤出或洗掉微粒可导致在终产物上形成残留物和促进收率损失。
包括芳族氢氧化季铵比如苄基三甲基氢氧化铵(BTMAH)、溶剂比如烷基亚砜、二醇和腐蚀抑制剂和非离子性表面活性剂的抗蚀剂剥离组合物不完全清除晶片表面的许多干膜抗蚀剂。类似地,使用吡咯烷酮基溶剂比如N-甲基吡咯烷酮(NMP)的组合物呈现相同的缺点,因为它们不能实现许多干膜抗蚀剂的完全清除。一般来讲,在NMP中包括氢氧化季铵比如四甲基氢氧化铵(TMAH)的组合物不完全溶解许多干膜抗蚀剂。如上文讨论,不完全溶出产生微粒,其可变成污染源导致收率损失。
对于橡胶基树脂种类的负性性质光刻胶注意到类似经验。用于清洁由橡胶光刻胶产生的残留物和掩模的剥离化学剂包括烃溶剂和酸,通常是磺酸。高酸度是水解的橡胶组分的性能和乳化所需。代表性抑制剂包括巯基苯并***(MBT)和相关***以抑制对相邻金属特征的攻击。这些化学剂的常见抑制剂包括catachol,一种有毒和致癌材料。而且,这种烃剥离剂的漂洗步骤必须使用异丙醇(IPA)或相关的中性和相容的溶剂。这种漂洗实践,虽然成本增加,将减小因为在水与剥离剂成分混合过程中pH下降导致的对相邻金属的金属攻击效应。因为相容性问题,使用烃基剥离剂产生的废料必须与微电子制造的正常有机物流分离。
虽然从剥离化学剂观点来看注意聚合物和残留物清除的难题是重要的,但对于过程的设计和工具的适当性能需要同样的努力。一般理解清洁工具的主要目的是在过程中提供控制。通过操作工具,部分批料之间的差异减小。除了由装置(unit)产生的任何混合或化学调整以外,工具对于控制可用的变量包括温度、搅动和时间。随着一直存在的强压以增加生产线的生产量,不变的重点是降低过程时间。而且,不改变化学剂,唯一的选择只剩下增加温度和搅动,期望聚合物溶出速率将增加,导致更短的过程时间。但是,与过程目的相反的其它反应,比如腐蚀速率,也将随温度和搅动的增加而增加。另外,最重要的是,剥离化学剂持续负载有机物,引起电解槽寿命降低,加速指示性能下降的残留物或其它现象的出现。
在温度连续性上,可通过增加温度或搅动促进电解槽寿命。当必须控制搅动以保护基板特征时,可通过增加温度增加聚合物溶出而增加电解槽寿命情况。有基本的安全限制,由工业指南(SEMI S3-91,Safety Guidelines for Heated Chemical Baths)传达。根据SEMI,液体过热温度应当控制在高于液体正常操作温度不超过10摄氏度,其中典型的操作温度不超过液体的闪点。许多公司将设定更严格的策略,比如在闪点下10摄氏度操作和设定过热温度为闪点。这些及其它标准可最好地见于平板显示器(FPD)的加工中。
在FPD生产厂家的抗蚀剂剥离发生在大基板上,该基板在传送机上从一个室移动至另一个室。通过用喷雾器递送的淹没整个玻璃表面的剥离剂,将抗蚀剂从面板剥离,移动至漂洗阶段,其中将蒸馏、去离子或软化水或者备选溶剂喷在表面上,该过程用包括热空气刀的干燥步骤完成。剥离由至少两个产品罐支持,产品罐是单独和分离的,与部件的流动方向一致排列。将进入工具的基板首先用第一罐内的化学剂“洗涤”。将剥离剂喷在基板表面上,与抗蚀剂反应并从基板流下后,将其收集和返回罐内,其中将其接着加热和过滤以便从大量化学剂中清除任何悬浮和未溶解的材料。然后将过滤和加热的剥离剂循环回喷雾室,其中以优化抗蚀剂剥离过程的连续方式将其递送至基板。
随着部件在传送机上从由罐#1支持的第一室移动至由罐#2支持的下一室,剥离剂的纯度有基本改变。虽然罐#2的操作条件可能与罐#1的相同,但存在的抗蚀剂量低于罐#1。限定室#1的典型加工时间以提供化学剂与抗蚀剂接触的停留时间,这优化抗蚀剂剥离和最大清除。随着时间推移,罐#1将达到溶解的抗蚀剂的最大负载力,则需要决定替换内容物。当这发生时,将罐#1的内容物送至废料,用罐#2的内容物替换。将罐#2的内容物用新鲜剥离剂(即纯剥离剂)替换。这样,体系被称为以逆流方式操作。也就是说,部件的过程流与化学剂的流动方向“相对”或相反。通过使用这种实践,罐#1和#2分别变成脏的和清洁的罐。换句话说,不需要的抗蚀剂在线路的前端集中,而最清洁的化学剂保持靠近末端,从而在这点之后,将产物基板漂洗和干燥。
此处对FPD实例给出的结构与大多数(如果不是全部)直列(in-line)台式工具和许多批次式加工工具相符。在台式工具中,部件从一个站移动至另一个站,而罐在固定位置。在批次式工具中,部件可旋转但保持在固定位置,而化学剂通过喷雾递送。将有两个罐,工具将从一个泵至另一个,通过使用“脏”和“清洁”罐实施逆流清洁设计。
在用这些配制的剥离剂加工的过程中有同等的、尚未满足的需要以实现选择性。也就是说,因为在曾经的还原时间中将更具侵蚀性的化学剂投入实践用于实现期望的清洁性能,所以必须在不损害敏感金属和下面基板的情况下进行这种实践。由于选择的许多酸或碱一旦在漂洗步骤中与水混合,它们将快速使体系的pH“剧变(spike)”,引起对基板金属的电化腐蚀,这尤其是个难题。在FPD线路的漂洗阶段中,将水喷在含有残留剥离剂的加热的玻璃表面上。表面活性剂不用于FPD线路中,怕发生发泡情况最终引起滤器的灾难性故障、干燥气泡的泵出、更坏的是可触发电短路并导致火灾的溢出的剥离剂污染该制造。既然不使用表面活性剂,所以有不规则扩散,因为表面张力从有机剥离剂上升至含水条件。不规则混合和扩散引起面板上的短暂死点,这促进加速的腐蚀。腐蚀副产物和发泡情况可通过用中性溶剂比如异丙醇(IPA)漂洗而避免。虽然这种实践为几个FPD生产厂家接受,但它既昂贵也有可燃性危险。
因此,需要改善的剥离组合物,它们将以快速方式清除加工的抗蚀剂,同时在用蒸馏、去离子或软化水漂洗过程中维持对下面的冶金的安全性,并在整个过程中防止腐蚀、刨削、溶解、消光,或另外擦伤表面。而且,在工业内存在朝向“绿色”的越来越高的积极性。绿色过程和关联化学剂将减小或消除危险物质的使用和产生。根据American Chemical Society′s Green Chemistry Institute,有十二(12)项帮助限定绿色化学剂的原则。
对微电子制造中聚合物的这个综述提出在工业中的严重和强制性难题。当使用有机电介质时,持续需要可通过溶解和清洁下面基板上不需要的材料而用于使固化聚合物有效返工的过程和组合物。在正性光刻胶的情况下,对有效清除基板的聚合物而不对相邻金属特征产生有害效果的过程和组合物有类似和持续的需要。最后,在负性性质光刻胶的情况下,对有效清除基板的聚合物而不对相邻金属特征产生有害效果的过程和组合物存在相同的需要。虽然所有这些材料都是有机来源,它们的化学是不同的,提出必须克服以实现期望的清洁结果的独特难题。
虽然期望用独特的组合物满足清除有机物的需要,但还有设计由工具支持的过程的难题,该工具能快速加工部件、用水漂洗,不对基板产生有害效果。对微电子工业持续强调通过改善操作安全性、减少使用化学剂和减少产生危险废料而呈绿色。将这些难题综合一起,迫切需要提供一致和通用的过程,它使用根据待清除的独特聚合物或残留物的性能需要变化的物质组合物,提供高性能、高生产量、绿色过程,所有都减少所有权人的成本。
发明概述
本发明第一个实施方案涉及从无机基板清洁有机树脂的组合物,该组合物由溶剂或溶剂混合物和至少一种重量%大于10%的磺化聚酯组成,其中溶剂选自二甘醇、二甘醇单乙基醚、二甘醇单甲基醚、二甘醇单丁基醚、二甘醇单丙基醚及其混合物。
另一个实施方案涉及从无机基板清除有机树脂的组合物,该组合物包含重量%为约0.5%-约99.0%的有机溶剂或溶剂混合物,和至少一种重量%为约0.5%-约99.0%的水溶性、水分散性或水消散性聚酯组分B,和至少一种重量%为约0.01%-约99.0%的增强清洁性能的添加剂。
另一个实施方案涉及从无机基板清除有机树脂的方法,包含(a)用组合物涂布所述有机树脂,该组合物包含:i)重量%为约0.5%-约99.0%的有机溶剂或溶剂混合物,和ii)至少一种重量%为约0.5%-约99.0%的水溶性、水分散性或水消散性聚合物组分B,(b)将基板加热至足以实现有机树脂溶出的温度和时间,和(c)用足以清除组合物和有机树脂的一定体积漂洗剂漂洗基板。
发明详述
本发明提供剥离组合物和方法,其快速和有效地将聚合有机物从无机基板、从金属、非金属和金属化非金属基板清除。该剥离组合物包含有机溶剂、水溶性聚合物和任选各种添加剂,它有效地清除包含在电子制造中用于制造微电路的基础的热塑性或热固性有机物及其残留物。添加剂增强或改善剥离组合物的清洁性能。该方法限定以下实践:将组合物涂布在基板上,将基板加热至具体温度足以实现有机物溶出的给定时间,和通过漂洗清除副产物而完成。该组合物和方法一起工作以提供在常规剥离过程中一般看不到的性能及其它期望的制造目标。虽然当暴露于用户的过程时可将待清除有机物固化成坚硬和化学抗性的框架,但发现本发明维持可接受的性能。
无论何时术语“水消散性”或“水分散性”用于本说明书中,将它理解为指水或含水溶液对单体(组分B)的活性。该术语具体旨在覆盖其中水或含水溶液将单体材料溶解和/或分散于其中和/或经由水或含水溶液将单体材料溶解和/或分散的那些情况。
术语“剥离”、“清除”和“清洁”在整个本说明书中互换使用。同样,术语“剥离剂”、“清除剂”和“清洁组合物”互换使用。将术语“涂布”限定为将薄膜施用至基板的方法,比如喷涂、搅涂(puddle coating)、缝涂或浸渍。术语“薄膜”或“涂层”互换使用。不定冠词“a”和“an”旨在包括单数和复数两者。所有范围都是包含性的且可按任何顺序组合,除非明确此类数字范围受限于总计100%。术语“wt%”指基于剥离组合物组分总重量的重量百分数,除非另外指出。
本发明的过程可涉及将无机基板浸没在本发明的组合物浴中或者优选通过将组合物作为涂层施用于无机基板。一旦将基板浸没在组合物中或将组合物使用并覆盖或涂布整个区域,基板的加热开始。发生快速加热速率直至达到期望的温度并保持一段期望的时间。或者,可将其中浸没了基板的浴维持在期望的温度。用漂洗剂漂洗,接着干燥步骤。总的实践方法涉及三(3)个不同步骤,即涂布、加热和漂洗。本文使用的术语“漂洗剂”包括清除待剥离的组合物和材料的任何溶剂。剥离剂的实例包括水、丙酮、异丙醇及其混合物。
本发明的实施方案涉及方法,由此将本发明组合物作为液体涂层施用,直接接触待清除物。该方法包括从大约25℃的任何地方加热至约400℃或者从约100℃加热至约250℃。温度的变化将取决于有机物的性质和厚度。加热步骤过程时间可为约5秒钟-约10分钟,约10秒钟-约8分钟,或者甚至约30秒钟-约4分钟。而且,整个过程时间从<15秒钟的任何地方变化至180秒钟,在一些情况下变化至5分钟至10分钟。时间的变化取决于待清除材料、其厚度和暴露条件。例如,对于PHost或酚醛清漆树脂,加热步骤可为约15秒钟-约1分钟。但是,对于其它,更高度固化的树脂,加热步骤可持续约2-4分钟或甚至更久。一旦有机物的扩散完成,可进行用漂洗剂比如蒸馏、去离子或软化水漂洗。
在组合物中存在水溶性聚合物促进漂洗。这种聚合物充当从无机基板清除的有机物的载体体系。用于漂洗的漂洗剂可在约5℃-约100℃的温度。但是,漂洗还可发生在室温,执行两个目的,清除溶解的有机物,和降低基板温度以便可进行下一阶段正常的工具处理。
用于本发明的物质的组合物包括多种溶剂体系的主要组分,包括一种或多种选自结构(I)R-CO2R1的酯,结构(II)R2-CO2C2H4(OC2H4)n-OR3、(III)R4-CO2C3H6(OC3H6)n-OR5和(IV)R6OCO2R7的二醇醚酯,选自结构(V)R8OH、(VI)R9OC2H4(OC2H4)nOH、(VII)R10OC3H6(OC3H6)nOH、(VIII)R11(OC2H4)nOH和(IX)R12(OC3H6)nOH的醇,选自结构(X)R13COR14的酮,选自结构(XI)R15SOR16的亚砜,和酰胺比如N,N-二甲基甲酰胺、N,N-二甲基乙酰胺和N-甲基吡咯烷酮,其中R、R1、R2、R3、R4、R5、R6、R7、R8、R9、R10、R11、R12、R13、R14、R15和R16独立选自氢或C1-C14-烷基,n代表1-10范围的重复单元。而且,合适的溶剂包括但不限于酮类比如环己酮、2-庚酮、甲基丙基酮和甲基戊基酮,酯比如乙酸异丙酯、乙酸乙酯、乙酸丁酯、丙酸乙酯、丙酸甲酯、γ-丁内酯(BLO)、2-羟基丙酸乙酯(乳酸乙酯(EL))、2-羟基-2-甲基丙酸乙酯、羟基乙酸乙酯、2-羟基-3-甲基丁酸乙酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、丙酮酸甲酯和丙酮酸乙酯,醚和二醇醚比如二异丙基醚、乙二醇单甲基醚、乙二醇单乙基醚和丙二醇单甲基醚(PGME),二醇醚酯比如乙二醇单乙基醚乙酸酯、丙二醇甲基醚乙酸酯(PGMEA)和丙二醇丙基醚乙酸酯,芳族溶剂比如甲基苯、二甲基苯、茴香醚和硝基苯,酰胺溶剂比如N,N-二甲基乙酰胺(DMAC)、N,N-二甲基甲酰胺和N-甲基甲酰苯胺,和吡咯烷酮比如N-甲基吡咯烷酮(NMP)、N-乙基吡咯烷酮(NEP)、二甲基哌啶酮、2-吡咯、N-羟基乙基-2-吡咯烷酮(HEP)、N-环己基-2-吡咯烷酮(CHP),和含硫溶剂比如二甲基亚砜、二甲基砜和四亚甲基砜。虽然这些有机溶剂可以个别或组合(即作为与其它的混合物)使用,优选的溶剂体系应含有二甘醇(DEG,Eastman Chemical Company)、二甘醇单乙基醚(DE溶剂,EastmanChemical Company)和二甘醇单丙基醚(DP溶剂,Eastman ChemicalCompany)。
组合物的实施方案包括一种或多种约0.5重量百分数-约99.5重量百分数的这些所述溶剂。在一个实施方案中,溶剂存在于溶剂组合物中的重量%为约40%-约97%或者重量%为约60%-约90%。
组合物还含有聚合物,它呈现水溶性、水分散性或水消散性的性质,以约0.5-约99.5重量百分数存在,衍生于但不限于,醇乙氧基化物、双酚乙氧基化物和丙氧基化物、烷基苯盐、邻苯二甲酸乙酸纤维素、烷氧基乙基和羟基丙基的纤维素衍生物、乙烯和环氧丙烷的共聚物、树枝状聚酯、乙氧基化胺、乙氧基化醇盐、乙烯丙烯酸、羟基-甲基丙烯酸酯、磷酸酯、聚乙二醇、聚乙烯亚胺、聚氧乙烯、聚乙烯醇、聚乙烯基吡咯烷酮、淀粉、苯乙烯马来酸酐、磺化丙烯酸、磺化聚苯乙烯、直链或分支式的磺基聚酯或松香酸。组合物包括一种或多种约10.0重量百分数-约99.5重量百分数的这些聚合物。在一个实施方案中,聚合物存在于溶剂组合物中的重量%为约12.0-约60.0或者重量%为约15.0-约30.0。
在一个实施方案中,水溶性聚合物包括一种或多种分别为直链或分支种类的磺化聚酯(磺基聚酯)或其混合物。磺基聚酯包含
(i)至少一种二羧酸的单体残基;和
(ii)基于所有酸和羟基当量的总和约4-25摩尔百分数的至少一种二官能磺基单体的单体残基,它含有至少一个与芳环键合的金属磺酸基,其中官能团是羟基或羧基或氨基,磺酸基的金属是Na、Li、K、Mg、Ca、Cu、Ni、Fe及其混合物;和任选的
(iii)至少一种具有式--(OCH2CH2)n--的聚(烷二醇)的单体残基,其中n是2至约500,前提是此类残基的摩尔百分数与n的数值成反比;和
(iv)至多约75摩尔百分数的至少一种二元醇的单体残基,其中所述二元醇不是聚(烷二醇)。
用于本发明的合适的磺基聚酯聚合物是称为Eastman AQ聚合物和Eastman AQ Copolyester的那些。一般来讲,合适的聚合物是用二甲基-5-钠代磺基间苯二甲酸酯及其母酸和盐制备的此类聚合物,它可衍生于诸如间苯二甲酸、对苯二甲酸及其酯的此类共聚单体。通常与此类酸共聚单体使用的二元醇是二甘醇、乙二醇、三甘醇、聚乙二醇、丙二醇、2-甲基丙二醇、新戊二醇、1,6-己二醇等。
聚合物可选自水溶性、水分散性或水消散性磺基聚酯或聚酯酰胺(下文统称为磺基聚酯),其含有醚基和磺酸基,具有二醇残基和二羧酸残基,和至少一种二官能共聚单体,该单体含有与芳核连接的磺酸基,形式为金属盐。此类聚合物为本领域技术人员公知,可购自Eastman Chemical Company,商品名为Eastman AQ聚合物。特别地,可将此类磺基聚酯溶解、分散或另外消散在含水分散体中,优选温度小于约80℃。此类聚酯更详细地描述于美国专利号3,734,874,其公开通过引用结合到本文中。本领域技术人员将理解,用于说明书和总结(concluding)的权利要求的术语“残基”或“组分”指一个部分(moiety),该部分是化学物种在特定反应方案中的所得产物或后续制剂或化学产物,而不论该部分是否实际由该化学物种获得。因此,例如,聚酯中的乙二醇残基指聚酯中一个或多个-OCH2CH2O-重复单元,而不论乙二醇是否用于制备该聚酯。
上述聚酯材料根据描述于以下美国专利号的聚酯制备技术制备:3,734,874、3,779,993、3,828,010、4,233,196、5,006,598、5,543,488、5,552,511、5,552,495、5,571,876、5,605,764、5,709,940、6,007,749和6,162,890,其公开通过引用结合到本文中,用于上文说明和附属权利要求的术语“酸”包括酸反应物的各种成酯或可缩合衍生物,比如这些专利阐述的制备中所采用的酸反应物的二甲基酯。磺基-单体的实例是其中磺酸基和芳核(比如苯、萘、联苯等,或者其中该核是环脂族的,如在1,4-环己烷二羧酸中)连接的那些单体。
组合物的添加剂可包含约100份/百万(ppm)-约99重量百分数的有机或无机来源的碱或酸,包括氢氧化铵、四价氢氧化物比如四甲基氢氧化铵(TMAH)、四乙基氢氧化铵(TEAH)和苄基三甲基氢氧化铵(BTMAH),胺比如三亚乙基四胺,烷醇胺包括单乙醇胺、单异丙醇胺、二甘醇胺,元素氢氧化物,或烷醇盐比如叔丁基氢氧化钾(KTB),烷基-磺酸比如甲磺酸(MSA)、甲苯磺酸(TSA)和十二烷基苯磺酸(DDBSA)、甲酸、脂肪酸、硫酸、硝酸或磷酸。添加剂的存在量可为约0.1重量百分数-约60重量百分数,约1.0重量百分数-约50重量百分数,或者约5重量百分数-约40百分数。
在一个实施方案中,清洁组合物包括重量%为约0.5%-约99.0%的有机溶剂或溶剂混合物,至少一种重量%为约0.5%-约99.0%的磺化聚酯,和至少一种重量%为约0.01%-约99.0%的增强清洁性能的添加剂。而且,溶剂选自乙二醇、二甘醇、丙二醇、二甘醇乙基醚、二甘醇甲基醚、二甘醇丁基醚、二甘醇丙基醚、乙二醇丙基醚、乙二醇丁基醚及其混合物。
在另一个实施方案中,清洁组合物包括重量%为约30%-约95%的溶剂、重量%为约3%-约60%的聚合物和重量%为约2%-约60%的添加剂。
组合物还可包括充当基板组合物的保护剂的抑制剂。抑制剂包括螯合剂、络合剂或还原剂,包含一种或多种已知的种类,包括苄型氢氧化物比如儿茶酚、***、咪唑、硼酸酯、磷酸酯和烷基硅酸酯或元素硅酸盐、乙二胺四乙酸、二乙三胺五乙酸、次氮基三乙酸和2,4-戊二酮、还原剂、氢醌、乙二醛、水杨醛、脂肪酸比如柠檬酸和抗坏血酸、羟胺或香草醛。
本发明组合物还可包括表面活性剂,包括一种或多种已知种类,包括非离子的壬基酚和壬基乙氧基化物,阴离子形式包括烷基-磺酸酯、磷酸酯和琥珀酸酯,和氟化体系。
通过浴浸没或使用涂布实践使组合物接触基板。在微电子制造中,旋涂是用于将涂层施用于基板的所选方法。但是,存在其它方法,包括如在FPD制造中用于大型基板的喷涂-旋涂和缝涂。在所有情况下,目的是以实现完全覆盖的方式施用组合物。正常地,大多数涂布应用与高均匀度有关。在本发明方法中,应建立最小厚度,典型地在最小值为1000微米(1um=1×10-6m)等级,但在有机物非常薄的一些情况下,组合物厚度可以更小。在本发明的一个实施方案中,涂层可为至多约800微米厚,约200-约600微米厚,或者约300-约400微米厚。
用于旋涂本发明方法的组合物的常用实践是将材料分配在基板的中央,以低速圆周运动速度(即<100转每分钟,rpm)操作设备。可通过静态法完成液体递送,由此将流体“搅”在表面上。还可使用动态法,其中当基板已经运动时分配材料。在新过程设置的早期,可能需要建立rpm和时间的确切情况,其方式确保基板完全覆盖而具有最少或没有废料。不需要关注边缘珠形成因为这种情况将与过程目的无关。
自旋-速度的操纵是用于微电子工业的许多装置的共同焦点。基板旋转将直接影响这些性质和产生不同的涂布结果。在低自旋-速度,流体移动性低且材料损失小,但是,还可发生基板覆盖的不规则。或者,高自旋-速度将导致高移动性和高材料损失。虽然旋涂是工业的标准实践,经验显示可用喷涂实践可实现可接受的厚度均匀度的厚涂层。一旦涂布完成,可立即进行过程的热激活。
热应用可通过几种途径进行。对于人工操作,可使用简单的热板。这需要将基板从一个位置移动至另一个位置。在其中关注自动化的情况下,晶片可保持静止,而用基部(base-chuck)或顶部(overhead)IR对流源施热。关于控制和生产量的确切工效和逻辑关注可以很容易由工具设计领域技术人员确定。一旦遵循适当的加热方案,可通过在搅动的批料中或通过直接喷雾接触将组合物和有机树脂用漂洗剂漂洗而清除。
当用在非晶态有机物比如PHost或酚醛清漆种类的正性性质光刻胶上时,本发明的剥离组合物通过维持溶解环境而发挥功能。在此类情况下和当暴露条件包括至多150摄氏度的中等温度时,将含有最小成分(包括溶剂体系和水溶性聚合物)的组合物在本发明方法的条件下涂布和加工。当加热至足够温度时,发生快速溶出,且光刻胶扩散到组合物内快速进行至完成。添加剂比如碱剂、抑制剂和表面活性剂可用于促进高度烘烤(即>150摄氏度)光刻胶的良好结果。使用剥离组合物内含有的添加剂的优点可包括因为使交联的光刻胶皂化而改善溶出速率同时在剥离和漂洗步骤中抑制剂保护暴露的金属。
有机烷醇胺化合物优选用于正性性质光刻胶的碱性皂化和乳化,包括一种或多种低分子量备选物,例如单乙醇胺(MEA)、单异丙醇胺(MIPA)或二甘醇胺(DGA)及其组合。在其中负性性质丙烯酸光刻胶或固化的热固性聚酰亚胺是待清除的备选物的情况下,组合物将需要强碱,即四价氢氧化物、金属氢氧化物或烷醇盐。
与此处对于清除正性和负性丙烯酸以及聚酰亚胺的涂层和残留物所给出的综述类似,组合物还用于清除负性异戊二烯(橡胶)抗蚀剂和负性-环氧(SU-8TM)光刻胶。如我们已经对正性光刻胶和负性丙烯酸和聚酰亚胺所确定的,组合物的选择取决于待清除的材料。对于负性-异戊二烯,化学剂是疏水(非极性)的,交联橡胶体系对碱不反应,只对酸反应。橡胶光刻胶需要芳族溶剂和疏水的酸,比如十二烷基苯磺酸。对于负性环氧光刻胶,化学剂是亲水(极性)的,像橡胶光刻胶一样,这些体系对碱也不反应。优选的体系是加入亲水的酸比如甲磺酸(MSA)或硫酸的体系。这些体系全都含有水溶性聚合物,以促进在光刻胶溶出后的适当漂洗。
实施例
下列实施例进一步说明本发明。除非另外指定否则给定的所有百分数都是按重量计。
通过下列实施例(非限制性)进一步说明本发明。在前3个实施例中,用容易被工业界接受的实践进行本发明性能和选择性的测量。在此类情况下,通过光学显微镜进行测量,必要时,通过在金属基板上的高灵敏度重量评价(gravimetric review)来使用刻蚀率测定,必要时,用扫描电镜(SEM)进行更详细的研究。在下列实施例中,将硅晶片用作无机基板,在其上施用和固化有机物。下列表1中的项目代表待清除的有机物,它们的制备方法,和获得它们的来源。
表1:用于证明本发明的有机树脂列表
*PGMEA:丙二醇单甲基醚乙酸酯
当适用时,将有机物按以下涂布方式施用,使用Brewer Science,Inc.CB-100涂布机,遵循将液体形式的聚合物材料施用于无机基板的标准方案。一旦将材料涂布,将其送至软烤(soft bake)步骤在100摄氏度热板烘烤短短60秒钟。对于负性丙烯酸抗蚀剂,将材料暴露于在365nm发射的广谱型紫外光和0.12W/cm2-秒的高暴露剂量30分钟的过量时间。暴露之后,将晶片在取决于抗蚀剂的预定硬烤(hard bake)温度和时间下进行暴露后烘烤。一旦已经制备晶片样品,则它们为实验做好准备。在实施例2-6中的实验全部用相同的晶片和处理实践彼此相同地进行。将各晶片置于将证明本发明的工作站中。提前制备组合物,也放在一旁。通过将关注的组合物施用于晶片表面一部分来测试本发明方法。然后立即将晶片转移至已预先设定在期望的加工温度的热板。一旦将晶片置于热板上,启动数字计时器。一旦预定的60秒钟终止,将晶片取出,立即用洗瓶中的蒸馏、去离子或软化水漂洗。观察漂洗的晶片,并放在一旁干燥。进行另外的观察,记录结果。
实施例1
在所有情况下,通过加入预制原液引入磺基聚酯。这些原液包含亲水溶剂(组分A)和水溶性或水分散性或水消散性聚合物(组分B)。所选聚合物是直链和分支种类两者的不同玻璃化转变温度和粘度的各种磺基聚酯。此类聚合物为本领域技术人员公知,可购自EastmanChemical Company,商品名为Eastman AQ聚合物。特别地,可使此类磺基聚酯溶解、分散或另外消散在含水分散体中,优选温度小于约80℃。此类聚酯更详细地描述于美国专利号3,734,874,其公开通过引用结合到本文中。视为本发明备选物的聚酯包括,但不限于,EastmanAQ 38S Polymer、Eastman AQ 48 Ultra Polymer、Eastman AQ 55SPolymer、EastONE S85030 Copolyester,Eastman ES-100Water-Dispersible Polymer、Eastman AQ 1350 Copolyester和EastmanAQ 2350 Copolyester。所选溶剂是乙二醇、二甘醇、三甘醇、丙二醇、二甘醇甲基醚(Eastman DM溶剂)、二甘醇乙基醚(Eastman DE溶剂)、二甘醇丙基醚(Eastman DP溶剂)、二甘醇丁基醚(Eastman DB溶剂)、乙二醇丙基醚(Eastman EP溶剂)和乙二醇丁基醚(Eastman EB溶剂)。在筛选研究中,将溶液尝试用于10、20和30wt%的各种聚合物和溶剂对。此外,在4种二甘醇醚溶剂中尝试各自为40wt%固体的EastmanAQ 38S Polymer和Eastman AQ 48 Ultra Polymer的溶液。这些原液通过将溶剂加入具有搅动器、冷凝器并连接了氮源的圆底烧瓶制备。然后加入适量的固体磺基聚酯,将混合物搅动加热直至获得溶液。根据聚合物和溶剂对以及固体负载,将溶液加热至不同温度各种时间,从90摄氏度30分钟至180摄氏度70分钟。下文表2概述这些原液。“合适的溶液”是其中聚酯在制备条件下容易溶解,冷却时保持可溶的溶液,并且该溶液适合用于制备涂层。“坏的溶液”是其中固体在制备条件下不溶于溶剂或者形成的溶液在短期内不稳定的溶液。“不合格的溶液”是其中相同聚合物和溶剂对的溶液先前已在较低固体负载形成了坏的溶液的溶液。“有问题的溶液”是其中形成的溶液极度粘稠或者呈现可能长期不稳定的信号,但可能有进一步研究价值的溶液。
表2:可能的原液的概述
溶液状态 | AQ-38 | AQ-48 | AQ-55 | ES-100 | EastONE | AQ-1350 | AQ-2350 |
合适的溶液 | 20 | 21 | 3 | 1 | 1 | 18 | 6 |
有问题的溶液 | 0 | 3 | 2 | 1 | 3 | 2 | 1 |
坏的溶液 | 11 | 8 | 20 | 12 | 17 | 6 | 15 |
不合格的溶液 | 3 | 2 | 5 | 16 | 9 | 4 | 8 |
总溶液 | 34 | 34 | 30 | 30 | 30 | 30 | 30 |
基于这项筛选研究,将82种合适和有问题的溶液在PHost和酚醛清漆涂布的晶片两者上测试,所述晶片在两种情况下已经在150摄氏度固化15分钟。在每种情况下,将小量溶液施用于树脂涂布的晶片,将晶片立即加热至100摄氏度60秒钟,然后立即在环境温度下用水流洗涤。用简单目测评价树脂清除的完全性。只有那些通过目测检查判断为呈现优良清洁性能的共混物才视为通过。表3概述结果。
表3:酚醛清漆(N)和PHost(P)的清洁:(C-清洁;F-未通过)
发现固体负载范围为10wt%直至40wt%的包含二甘醇乙基醚和Eastman AQ 48 Ultra Polymer的组合物对清洁硅基板的PHost和酚醛清漆光刻胶树脂两者都呈现广泛的性能。此外,各种浓度的这些溶液即使在室温下贮存几个月后也极其稳定。
因此,将包含20wt%Eastman AQ 48和80wt%二甘醇乙基醚(Eastman DE溶剂)的组合物选择作为合适的标准组合物用于开发添加剂共混物,以将较外来和较困难地清除光刻胶作为攻击目标(target)。这种原液包含30%用于处理实施例2-6的晶片的终溶液,在所有这些溶液中得到6wt%磺基聚酯和24wt%DE溶剂。下列实施例2-6将证明本领域技术人员如何可以接近开发适合清除有机残留物的本发明组合物。用于进一步研究的这种标准组合物的选择或随后的具体实施例都不旨在限制本发明的范围。
与许多含有磺化聚酯的组合物的整体成功相反,含有其它水溶性、水分散性或消散性聚合物的组合物没有表现得几乎一样好。一般来讲,这些其它聚合物在所选溶剂中的可溶性小得多。获得溶液的过程条件再次根据聚合物和溶剂对以及固体负载而变化。在多数情况下,将溶液加热至温度范围为120摄氏度(30分钟)直至180摄氏度(80分钟);但是,聚乙烯基吡咯烷酮和树枝状聚酯两者是需要少得多的加热的明显例外。溶解度研究的结果列表如下。
表4:不含磺化聚酯的原液的概述
溶液状态 | 1DPE | 2AMP | 3PVP | 4SPS | 5HEC | 6XSS | 7PVME | 8CAP |
合适的溶液 | 0 | 1 | 40 | 0 | 0 | 0 | 10 | 8 |
有问题的溶液 | 26 | 0 | 0 | 0 | 0 | 6 | 0 | 13 |
坏的溶液 | 0 | 10 | 0 | 11 | 10 | 4 | 2 | 3 |
不合格的溶液 | 4 | 19 | 0 | 19 | 20 | 20 | 18 | 6 |
总溶液 | 30 | 30 | 40 | 30 | 30 | 30 | 30 | 30 |
1DPE-树枝状聚酯
2AMP-磺化丙烯酸
3PVP-聚乙烯基吡咯烷酮
4SPS-磺化聚苯乙烯
5HEC-羟乙基纤维素
6XSS-二甲苯磺酸钠
7PVME-聚乙烯基甲基醚
8CAP-邻苯二甲酸乙酸纤维素
从制备的合适和有问题的共混物中,选择49个在PHOST和酚醛清漆光刻胶两者上测试,所述光刻胶已在150摄氏度固化15分钟。在两种情况下,将小量各组合物施用于树脂涂布的晶片上,加热至100摄氏度60秒钟,然后立即用环境温度下的去离子水漂洗。接着进行简单目测,只有那些判断具有优良清洁性能的组合物视为通过。在许多情况下,只测试10wt%固体共混物;但是,还测试具有至多40wt%聚乙烯基吡咯烷酮固体的溶液,因为该特定聚合物如此溶于每种测试的溶剂中。除二甲苯磺酸钠外,结果几乎全部为负面(negative),因此相信不需要进一步测试。性能筛选的结果在下面概述。
表5:酚醛清漆(N)和PHOST(P)的清洁:(C-清洁;F-未通过)
1AMP-磺化丙烯酸
2PVP-聚乙烯基吡咯烷酮
3DPE-树枝状聚酯
4XSS-二甲苯磺酸钠
5CAP-邻苯二甲酸乙酸纤维素
6PVME-聚乙烯基甲基醚
非常少溶液在清洁PHOST和酚醛清漆光刻胶两者呈现成功,获得这种成功的少数组合物不是理想地用于本发明的有问题的溶液。通过比较,许多含有磺化聚酯的组合物在溶于PHOST和酚醛清漆光刻胶中呈现好得多的性能。含有磺化聚酯的组合物明显优于含有任何其它考虑的聚合物的那些组合物,从那些含有磺化聚酯的组合物选择单种组合物用于将来的测试。
实施例2
表4含有对按照表1描述涂布的PHost树脂进行的清洁研究的结果。将树脂在200摄氏度固化15分钟。所有清洁组合物都包含6wt%磺基聚酯、24wt%DE溶剂,其余70wt%包含2种表6指出的添加剂。清洁阶段的加工温度是100摄氏度、150摄氏度和200摄氏度。
表6:PHost树脂的清洁结果
1NMP-N-甲基-2-吡咯烷酮
2TMAH-四甲基氢氧化铵(20wt%,在丙二醇中)
3KTB-叔丁醇钾(20wt%,在丙二醇中)
4MEA-单乙醇胺
5MSA-甲磺酸
6DMSO-二甲基亚砜
表4的数据说明大多数溶液在溶解和清除PHost树脂方面表现良好,即使在200摄氏度的高暴露温度。富含较高浓度酸或碱添加剂的溶液呈现改善的结果。在两种富含水平,含有MEA的溶液清除高温固化的PHost表现欠佳。此处主要的结论是用本发明方法和组合物在60秒钟相对容易加工PHost。
实施例3
表5含有对按照表1描述涂布的酚醛清漆树脂进行的清洁研究的结果。将树脂在200摄氏度固化15分钟。所有清洁组合物都包含6wt%磺基聚酯、24wt%DE溶剂,其余70wt%包含2种表7指出的添加剂。清洁阶段的加工温度是100摄氏度、150摄氏度和200摄氏度。
表7:酚醛清漆树脂的清洁结果
1NMP-N-甲基-2-吡咯烷酮
2TMAH-四甲基氢氧化铵(20wt%,在丙二醇中)
3KTB-叔丁醇钾(20wt%,在丙二醇中)
4MEA-单乙醇胺
5MSA-甲磺酸
6DMSO-二甲基亚砜
表5说明大多数添加剂组合适合清洁硅基板的固化的酚醛清漆树脂;但是,当在200℃清洁时遇到一些困难。酸性溶液不产生期望的结果,尤其是对高度固化的酚醛清漆树脂,含有磷酸的组合物在几乎每种尝试中都未通过。
实施例4
表6含有对按照表1描述涂布的丙烯酸树脂进行的清洁研究的结果。将树脂在150摄氏度固化15分钟。所有清洁组合物都包含6wt%磺基聚酯、24wt%DE溶剂,其余70wt%包含2种表8指出的添加剂。清洁阶段的加工温度是100摄氏度、150摄氏度和200摄氏度。结果列表如下。
表8:丙烯酸树脂的清洁结果
1NMP-N-甲基-2-吡咯烷酮
2TMAH-四甲基氢氧化铵(20wt%,在丙二醇中)
3KTB-叔丁醇钾(20wt%,在丙二醇中)
4MEA-单乙醇胺
5MSA-甲磺酸
6DMSO-二甲基亚砜
表6说明固化的丙烯酸树脂比PHOST或酚醛清漆树脂更难以清洁。只有在添加剂组分中使用高度碱性材料比如TMAH、MEA或KTB才可在低温清洁的晶片上产生期望的结果。
实施例5
表7含有对按照表1描述涂布的聚酰亚胺树脂进行的清洁研究的结果。在软烤后,将晶片在200摄氏度固化15分钟,接着在350摄氏度另外固化30分钟。所有清洁组合物都包含6wt%磺基聚酯、24wt%DE溶剂,其余70wt%包含3种表9列出的添加剂。清洁阶段的加工温度是100摄氏度、150摄氏度和200摄氏度。结果列表如下。
表9:聚酰亚胺树脂的清洁结果
1NMP-N-甲基-2-吡咯烷酮
2TMAH-四甲基氢氧化铵(20wt%,在丙二醇中)
3KTB-叔丁醇钾(20wt%,在丙二醇中)
4MEA-单乙醇胺
5Surf-非离子型烷基聚乙二醇醚表面活性剂
6DMSO-二甲基亚砜
7DMSO2-二甲基砜
8KTB+MEA-相等重量的20wt%叔丁醇钾在丙二醇和单乙醇胺中
表7说明较高的加工温度得到从无机基板清洁聚酰亚胺树脂的最好结果。事实上在100摄氏度加工温度看不到良好的结果。另外,聚酰亚胺清除需要pKa等于或大于12的强碱组分。在其中MEA作为唯一的碱单独存在于组合物中的所有情况下,清洁结果不可接受。KTB或TMAH的存在的确促进良好的结果。
实施例6
表8含有对按照表1描述涂布的异戊二烯树脂进行的清洁研究的结果。将晶片在150摄氏度固化15分钟。所有清洁组合物都包含6wt%磺基聚酯、24wt%DE溶剂、68wt%包含2种表7列出的添加剂、2wt%包含表面活性剂比如ZelecTM UN(烷氧基磷酸酯表面活性剂)。清洁阶段的加工温度是100摄氏度、150摄氏度和200摄氏度。
表10:异戊二烯树脂的清洁结果
1Aromatic 150 Fluid来自ExxonMobil Chemical
2DDBSA-十二烷基苯磺酸
将表10呈现的清洁组合物设计为明显疏水性(烃)以允许清洁组合物渗入树脂内。此处显示的组合物代表影响适当性能必需的关键条件。发现必需提高的温度以在60秒钟内从无机基板充分清除橡胶样异戊二烯光刻胶。
虽然已具体参考其优选实施方案详细描述了本发明,但将理解可在本发明的精神和范围内进行变化和修改。
Claims (15)
1.一种从无机基板清洁有机树脂的组合物,包含:
溶剂或溶剂混合物;和
至少一种重量%大于10.0%的磺化聚酯,
其中溶剂选自乙二醇、二甘醇、丙二醇、二甘醇乙基醚、二甘醇甲基醚、二甘醇丁基醚、二甘醇丙基醚、乙二醇丙基醚、乙二醇丁基醚及其混合物。
2.权利要求1的组合物,其中溶剂的重量%为约40%-约97%。
3.一种从无机基板清除有机树脂的组合物,包含,
重量%为约0.5%-约99.0%的有机溶剂或溶剂混合物,和
至少一种重量%为约0.5%-约99.0%的磺化聚酯,和
至少一种重量%为约0.01%-约99.0%的增强清洁性能的添加剂,
其中溶剂选自乙二醇、二甘醇、丙二醇、二甘醇乙基醚、二甘醇甲基醚、二甘醇丁基醚、二甘醇丙基醚、乙二醇丙基醚、乙二醇丁基醚及其混合物。
4.权利要求3的组合物,其中溶剂的重量%为约30%-约95%,聚合物的重量%为约3%-约60%,和添加剂的重量%为约2%-约60%。
5.权利要求3的组合物,其中添加剂选自氢氧化铵、氢氧化季铵、胺、烷醇胺、元素氢氧化物、元素烷醇盐、甲磺酸、对甲苯磺酸、十二烷基苯磺酸、甲酸、硫酸、硝酸、磷酸或其混合物。
6.一种从无机基板清除有机树脂的方法,包含,
(a)将所述有机树脂用组合物涂布,所述组合物包含:
i.重量%为约0.5%-约99.0%的有机溶剂或有机溶剂混合物,和
ii.至少一种重量%为约0.5%-约99.0%的水溶性、水分散性或水消散性聚合物,
(b)将基板加热至足以实现有机树脂溶出的温度和时间,和
(c)将基板用足以清除组合物和有机树脂的一定体积的漂洗剂漂洗。
7.权利要求6的方法,其中组合物进一步包含至少一种重量%为约0.01%-约99.0%的增强清洁性能的添加剂。
8.权利要求6的方法,其中溶剂的重量%为约30%-约95%,聚合物的重量%为约3%-约60%,和添加剂的重量%为约2%-约60%。
9.权利要求6的方法,其中溶剂选自乙二醇、二甘醇、丙二醇、二甘醇乙基醚、二甘醇甲基醚、二甘醇丁基醚、二甘醇丙基醚、乙二醇丙基醚、乙二醇丁基醚及其混合物。
10.权利要求6的方法,其中聚合物选自醇乙氧基化物、双酚乙氧基化物、双酚丙氧基化物、烷基苯磺酸盐、邻苯二甲酸乙酸纤维素、烷氧基乙基的纤维素衍生物、羟基丙基的纤维素衍生物、乙烯的共聚物、环氧丙烷的共聚物、树枝状聚酯、乙氧基化胺、乙氧基化醇盐、乙烯丙烯酸、羟基-甲基丙烯酸酯、磷酸酯、聚乙二醇、聚乙烯亚胺、聚氧乙烯、聚乙烯醇、聚乙烯基吡咯烷酮、淀粉、苯乙烯马来酸酐、磺化丙烯酸、磺化聚苯乙烯、磺基聚酯、松香酸及其混合物。
11.权利要求6的方法,其中添加剂选自氢氧化铵、氢氧化季铵、胺、烷醇胺、元素氢氧化物、元素烷醇盐、甲磺酸、对甲苯磺酸、十二烷基苯磺酸、甲酸、硫酸、硝酸、磷酸或其混合物。
12.权利要求6的方法,其中将基板加热至约25℃-约400℃的温度。
13.权利要求6的方法,其中无机基板包含半导体晶片、平板显示器或印刷电路板。
14.权利要求6的方法,其中所述涂布包含喷涂、旋涂或缝涂。
15.权利要求6的方法,其中漂洗剂是水、丙酮、异丙醇或其混合物。
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Cited By (10)
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US10332740B2 (en) * | 2016-12-14 | 2019-06-25 | Samsung Electronics Co., Ltd. | Method of manufacturing a semiconductor device and a cleaning composition for an adhesive layer |
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JP7389886B2 (ja) | 2019-07-11 | 2023-11-30 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング | フォトレジストリムーバ組成物 |
US20230173796A1 (en) * | 2020-05-11 | 2023-06-08 | Cryovac, Llc | Multilayer film having a soluble tie layer and method for dissipating |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3734874A (en) * | 1970-02-27 | 1973-05-22 | Eastman Kodak Co | Polyesters and polyesteramides containing ether groups and sulfonate groups in the form of a metallic salt |
EP0388592A2 (de) * | 1989-01-31 | 1990-09-26 | Hoechst Aktiengesellschaft | Entschichtungslösung für elektrophotographisch bebilderte Platten und Verfahren zum Entschichten solcher Platten |
US6127097A (en) * | 1991-10-22 | 2000-10-03 | International Business Machines Corporation | Photoresist develop and strip solvent compositions and method for their use |
US20040029395A1 (en) * | 2002-08-12 | 2004-02-12 | Peng Zhang | Process solutions containing acetylenic diol surfactants |
Family Cites Families (148)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH225144A (de) | 1941-10-27 | 1943-01-15 | Chem Ind Basel | Reinigungsmittel. |
US3582401A (en) | 1967-11-15 | 1971-06-01 | Mallinckrodt Chemical Works | Photosensitive resist remover compositions and methods |
US3779993A (en) | 1970-02-27 | 1973-12-18 | Eastman Kodak Co | Polyesters and polyesteramides containing ether groups and sulfonate groups in the form of a metallic salt |
US3724874A (en) * | 1971-07-30 | 1973-04-03 | G Simpson | Vehicle drawbar assembly |
US3828010A (en) * | 1973-06-04 | 1974-08-06 | Eastman Kodak Co | Water-dissipatable polyesteramides |
US4169068A (en) | 1976-08-20 | 1979-09-25 | Japan Synthetic Rubber Company Limited | Stripping liquor composition for removing photoresists comprising hydrogen peroxide |
US4231804A (en) | 1978-01-17 | 1980-11-04 | Petterson Robert C | Vapor stripping method |
US4233196A (en) | 1979-04-30 | 1980-11-11 | Eastman Kodak Company | Polyester and polyesteramide compositions |
US4861512A (en) | 1984-12-21 | 1989-08-29 | The Procter & Gamble Company | Sulfonated block polyesters useful as soil release agents in detergent compositions |
US4744834A (en) * | 1986-04-30 | 1988-05-17 | Noor Haq | Photoresist stripper comprising a pyrrolidinone, a diethylene glycol ether, a polyglycol and a quaternary ammonium hydroxide |
IE59971B1 (en) | 1986-11-10 | 1994-05-04 | Baker J T Inc | Stripping compositions and their use for stripping resists from substrates |
US4770713A (en) | 1986-12-10 | 1988-09-13 | Advanced Chemical Technologies, Inc. | Stripping compositions containing an alkylamide and an alkanolamine and use thereof |
ES2018568B3 (es) | 1986-12-24 | 1991-04-16 | Rhone-Poulenc Chimie | Latex antirredepositable para el lavado de articulos textiles |
JPS63168651A (ja) * | 1987-01-06 | 1988-07-12 | Asahi Chem Ind Co Ltd | フオトレジストの剥離剤組成物 |
WO1990000579A1 (en) | 1988-07-15 | 1990-01-25 | Advanced Chemical Systems International Corporation | Stripping composition using n-cyclohexyl-2-pyrrolidone |
US5182043A (en) * | 1989-10-31 | 1993-01-26 | The Procter & Gamble Company | Sulfobenzoyl end-capped ester oligomers useful as soil release agents in granular detergent compositions |
DE4001415A1 (de) * | 1990-01-19 | 1991-07-25 | Basf Ag | Polyester, die nichtionische tenside einkondensiert enthalten, ihre herstellung und ihre verwendung in waschmitteln |
US5006598A (en) * | 1990-04-24 | 1991-04-09 | Eastman Kodak Company | Water-dispersible polyesters imparting improved water resistance properties to inks |
US5091103A (en) * | 1990-05-01 | 1992-02-25 | Alicia Dean | Photoresist stripper |
US6110881A (en) * | 1990-11-05 | 2000-08-29 | Ekc Technology, Inc. | Cleaning solutions including nucleophilic amine compound having reduction and oxidation potentials |
US5496491A (en) * | 1991-01-25 | 1996-03-05 | Ashland Oil Company | Organic stripping composition |
US5431847A (en) * | 1991-07-17 | 1995-07-11 | Charles B. Barris | Aqueous cleaning concentrates |
US5218042A (en) * | 1991-09-25 | 1993-06-08 | Thauming Kuo | Water-dispersible polyester resins and process for their preparation |
FR2682956B1 (fr) * | 1991-10-29 | 1994-01-07 | Rhone Poulenc Chimie | Procede de preparation de polyesters hydrosolubles et/ou hydrodispersables et utilisation de ces polyesters pour l'encollage de fils textiles. |
DE4222012A1 (de) * | 1991-12-21 | 1993-06-24 | Hoechst Ag | Waessrige fuellerzusammensetzung |
US6825156B2 (en) * | 2002-06-06 | 2004-11-30 | Ekc Technology, Inc. | Semiconductor process residue removal composition and process |
US5411596A (en) * | 1993-04-01 | 1995-05-02 | Deluxe Corporation | Oil based composition clean up method and composition for use therein |
US5843878A (en) | 1993-07-08 | 1998-12-01 | Procter & Gamble Company | Detergent compositions comprising soil release agents |
US5415807A (en) * | 1993-07-08 | 1995-05-16 | The Procter & Gamble Company | Sulfonated poly-ethoxy/propoxy end-capped ester oligomers suitable as soil release agents in detergent compositions |
US5710119A (en) * | 1993-07-23 | 1998-01-20 | The Procter & Gamble Company | Detergent compositions inhibiting dye transfer comprising copolymers of N-vinylimidazole and N-vinylpyrrolidone |
DE4332170A1 (de) * | 1993-09-22 | 1995-03-23 | Hoechst Ag | Polyestersalze und ihre Verwendung als Ladungssteuermittel |
US6187729B1 (en) * | 1993-12-14 | 2001-02-13 | Petroferm Inc. | Cleaning composition comprising solvating agent and rinsing agent |
US5543488A (en) * | 1994-07-29 | 1996-08-06 | Eastman Chemical Company | Water-dispersible adhesive composition and process |
KR970700743A (ko) * | 1993-12-29 | 1997-02-12 | 해리 제이. 그윈넬 | 수분산성 접착제 조성물 및 방법(water-dispersible adhesive composition and process) |
JP2679618B2 (ja) * | 1994-04-26 | 1997-11-19 | 日本電気株式会社 | 剥離液組成物および剥離洗浄方法 |
FR2720400B1 (fr) * | 1994-05-30 | 1996-06-28 | Rhone Poulenc Chimie | Nouveaux polyesters sulfones et leur utilisation comme agent anti-salissure dans les compositions détergentes, de rinçage, d'adoucissage et de traitement des textiles. |
JPH09507695A (ja) * | 1994-05-13 | 1997-08-05 | ユニリーバー・ナームローゼ・ベンノートシヤープ | 洗剤組成物 |
DE19539394A1 (de) | 1994-10-13 | 1996-04-25 | Lobeck Concept Ag | Farb-, Lack- und Folienablösemittel sowie Verwendung desselben |
EP0709419B1 (en) * | 1994-10-24 | 2004-04-14 | Eastman Chemical Company | Water-dispersible block copolyesters |
US6162890A (en) | 1994-10-24 | 2000-12-19 | Eastman Chemical Company | Water-dispersible block copolyesters useful as low-odor adhesive raw materials |
US5691298A (en) | 1994-12-14 | 1997-11-25 | The Procter & Gamble Company | Ester oligomers suitable as soil release agents in detergent compositions |
US5554312A (en) * | 1995-01-13 | 1996-09-10 | Ashland | Photoresist stripping composition |
US5547612A (en) | 1995-02-17 | 1996-08-20 | National Starch And Chemical Investment Holding Corporation | Compositions of water soluble polymers containing allyloxybenzenesulfonic acid monomer and methallyl sulfonic acid monomer and methods for use in aqueous systems |
JPH08231989A (ja) * | 1995-02-23 | 1996-09-10 | Kurita Water Ind Ltd | 洗浄剤組成物及び洗浄方法 |
US6060547A (en) * | 1995-04-28 | 2000-05-09 | The Proctor & Gamble Company | Film forming foundation |
DE69629631T2 (de) * | 1995-07-06 | 2004-03-11 | Unilever N.V. | Schmutzabweisende Polyetherester und diese enthaltende Waschmittelzusammensetzungen |
US5728671A (en) * | 1995-12-21 | 1998-03-17 | The Procter & Gamble Company | Soil release polymers with fluorescent whitening properties |
WO1998000509A2 (en) * | 1996-06-28 | 1998-01-08 | The Procter & Gamble Company | Non-aqueous particulate-containing liquid detergent compositions with specific alkyl benzene sulfonate surfactant |
JP3645362B2 (ja) * | 1996-07-22 | 2005-05-11 | 富士写真フイルム株式会社 | ネガ型画像記録材料 |
US5989353A (en) | 1996-10-11 | 1999-11-23 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
JPH10249913A (ja) | 1997-03-12 | 1998-09-22 | Japan Steel Works Ltd:The | 注水発泡脱揮方法及び装置 |
US6240933B1 (en) * | 1997-05-09 | 2001-06-05 | Semitool, Inc. | Methods for cleaning semiconductor surfaces |
US6815151B2 (en) | 1997-09-05 | 2004-11-09 | Tokyo Ohika Kogyo Co., Ltd. | Rinsing solution for lithography and method for processing substrate with the use of the same |
US5962388A (en) * | 1997-11-26 | 1999-10-05 | The Procter & Gamble Company | Acidic aqueous cleaning compositions |
JP3810538B2 (ja) * | 1997-11-28 | 2006-08-16 | 富士写真フイルム株式会社 | ポジ型画像形成材料 |
US5863881A (en) * | 1998-02-02 | 1999-01-26 | Citra Science Ltd. | Heavy oil remover |
JP3366859B2 (ja) | 1998-03-05 | 2003-01-14 | 日立化成デュポンマイクロシステムズ株式会社 | 感光性ポリイミド前駆体用現像液及びこれを用いたパターン製造法 |
US6348679B1 (en) * | 1998-03-17 | 2002-02-19 | Ameritherm, Inc. | RF active compositions for use in adhesion, bonding and coating |
US5985816A (en) | 1998-04-17 | 1999-11-16 | Dotolo Research Ltd. | Heavy oil remover |
WO1999060448A1 (en) | 1998-05-18 | 1999-11-25 | Mallinckrodt Inc. | Silicate-containing alkaline compositions for cleaning microelectronic substrates |
US6319884B2 (en) | 1998-06-16 | 2001-11-20 | International Business Machines Corporation | Method for removal of cured polyimide and other polymers |
US6368421B1 (en) * | 1998-07-10 | 2002-04-09 | Clariant Finance (Bvi) Limited | Composition for stripping photoresist and organic materials from substrate surfaces |
KR100288769B1 (ko) * | 1998-07-10 | 2001-09-17 | 윤종용 | 포토레지스트용스트리퍼조성물 |
KR100268108B1 (ko) * | 1998-08-25 | 2000-12-01 | 윤종용 | 포토레지스트용 스트리퍼 조성물 |
US20040065540A1 (en) * | 2002-06-28 | 2004-04-08 | Novellus Systems, Inc. | Liquid treatment using thin liquid layer |
DE19906367A1 (de) * | 1999-02-16 | 2000-08-17 | Clariant Gmbh | Verwendung von Kammpolymeren als Schutzablösepolymere |
US7129199B2 (en) | 2002-08-12 | 2006-10-31 | Air Products And Chemicals, Inc. | Process solutions containing surfactants |
US20030017960A1 (en) * | 1999-06-15 | 2003-01-23 | The Procter & Gamble Company | Cleaning compositions |
TW593674B (en) * | 1999-09-14 | 2004-06-21 | Jsr Corp | Cleaning agent for semiconductor parts and method for cleaning semiconductor parts |
US6093689A (en) * | 1999-09-20 | 2000-07-25 | Dotolo Research Ltd. | Asphalt and heavy oil degreaser |
JP2001100436A (ja) | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
US6369016B1 (en) * | 1999-11-08 | 2002-04-09 | Dotolo Research Ltd. | Heavy oil remover |
US6310263B1 (en) * | 1999-11-08 | 2001-10-30 | Dotolo Research Ltd. | Heavy oil remover |
KR20010065038A (ko) * | 1999-12-21 | 2001-07-11 | 구본준, 론 위라하디락사 | 박막트랜지스터 및 액정표시장치용 어레이기판 제조방법 |
DE10003137A1 (de) | 2000-01-26 | 2001-08-02 | Clariant Gmbh | Wäßrige oder wäßrig-alkoholische Körperreinigungsmittel enthaltend Oligoester |
TW558736B (en) * | 2000-02-26 | 2003-10-21 | Shipley Co Llc | Method of reducing defects |
JP2001291989A (ja) | 2000-04-04 | 2001-10-19 | Tokin Corp | 金属筐体を備えた電子部品 |
US6455479B1 (en) * | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
US6949495B2 (en) * | 2000-09-01 | 2005-09-27 | Tokuyama Corporation | Cleaning solution for removing residue |
JP3738996B2 (ja) * | 2002-10-10 | 2006-01-25 | 東京応化工業株式会社 | ホトリソグラフィー用洗浄液および基板の処理方法 |
US6599370B2 (en) | 2000-10-16 | 2003-07-29 | Mallinckrodt Inc. | Stabilized alkaline compositions for cleaning microelectronic substrates |
US7385751B2 (en) * | 2001-06-11 | 2008-06-10 | Sipix Imaging, Inc. | Process for imagewise opening and filling color display components and color displays manufactured thereof |
JP4810764B2 (ja) | 2001-06-29 | 2011-11-09 | 三菱瓦斯化学株式会社 | レジスト剥離剤組成物 |
MY143399A (en) * | 2001-07-09 | 2011-05-13 | Avantor Performance Mat Inc | Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning |
MY131912A (en) | 2001-07-09 | 2007-09-28 | Avantor Performance Mat Inc | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
US6916772B2 (en) * | 2001-07-13 | 2005-07-12 | Ekc Technology, Inc. | Sulfoxide pyrolid(in)one alkanolamine cleaner composition |
US6657017B2 (en) | 2001-07-27 | 2003-12-02 | Rhodia Inc | Sulfonated polyester compounds with enhanced shelf stability and processes of making the same |
US6756183B2 (en) | 2001-08-24 | 2004-06-29 | Fuji Photo Film Co., Ltd. | Method for preparing lithographic printing plate |
WO2003021642A2 (en) * | 2001-08-31 | 2003-03-13 | Applied Materials, Inc. | Method and apparatus for processing a wafer |
US6551973B1 (en) * | 2001-10-09 | 2003-04-22 | General Chemical Corporation | Stable metal-safe stripper for removing cured negative-tone novolak and acrylic photoresists and post-etch residue |
JP3914842B2 (ja) * | 2001-10-23 | 2007-05-16 | 有限会社ユーエムエス | 有機被膜の除去方法および除去装置 |
US7543592B2 (en) | 2001-12-04 | 2009-06-09 | Ekc Technology, Inc. | Compositions and processes for photoresist stripping and residue removal in wafer level packaging |
US6943142B2 (en) * | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
EP1335016A1 (en) | 2002-02-06 | 2003-08-13 | Shipley Company LLC | Cleaning composition |
FR2837205B1 (fr) * | 2002-03-15 | 2005-05-06 | Rhodia Chimie Sa | Copolyesteramides et leur utilisation comme agent antisalissure |
JP3813890B2 (ja) | 2002-03-22 | 2006-08-23 | 富士写真フイルム株式会社 | 3層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
US6827807B2 (en) * | 2002-04-09 | 2004-12-07 | Eastman Chemical Company | Process for producing multilayer structures having a layer formed from a blend of an ethylene-alpha-olefin interpolymer and an ethylene-alkyl acrylate interpolymer |
JP2004252395A (ja) | 2002-05-07 | 2004-09-09 | Shipley Co Llc | 残渣削減安定濃縮物 |
US20040159335A1 (en) * | 2002-05-17 | 2004-08-19 | P.C.T. Systems, Inc. | Method and apparatus for removing organic layers |
FR2840915B1 (fr) * | 2002-06-18 | 2004-08-27 | Ferrari S Tissage & Enduct Sa | Procede de revetement d'un textile architectural avec au moins une couche d'elastomere silicone, a partir d'une emulsion silicone aqueuse et textile architectural ainsi revetu |
US7393819B2 (en) | 2002-07-08 | 2008-07-01 | Mallinckrodt Baker, Inc. | Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility |
US6677286B1 (en) | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
JP4150557B2 (ja) * | 2002-09-02 | 2008-09-17 | 富士フイルム株式会社 | 多層レジストプロセス用中間層材料組成物及びそれを用いたパターン形成方法 |
US6837943B2 (en) | 2002-12-17 | 2005-01-04 | Samsung Electronics Co., Ltd. | Method and apparatus for cleaning a semiconductor substrate |
KR100835606B1 (ko) * | 2002-12-30 | 2008-06-09 | 엘지디스플레이 주식회사 | 구리용 레지스트 제거용 조성물 |
JP4085262B2 (ja) | 2003-01-09 | 2008-05-14 | 三菱瓦斯化学株式会社 | レジスト剥離剤 |
TWI286679B (en) | 2003-06-04 | 2007-09-11 | Kao Corp | Removing agent composition |
US7198681B2 (en) * | 2003-10-23 | 2007-04-03 | Halliburton Energy Services, Inc. | Methods and compositions for removing resin coatings |
JP4381778B2 (ja) * | 2003-11-17 | 2009-12-09 | パナソニック株式会社 | テクスチャ処理装置 |
US7183245B2 (en) * | 2003-12-23 | 2007-02-27 | General Chemical Performance Products, Llc | Stripper for cured negative-tone isoprene-based photoresist and bisbenzocyclobutene coatings |
TWI365491B (en) | 2003-12-24 | 2012-06-01 | Kao Corp | Composition for cleaning semiconductor device |
JP4166167B2 (ja) | 2004-02-05 | 2008-10-15 | 富士フイルム株式会社 | 感光性平版印刷版用現像液及び平版印刷版の製版方法 |
US8338087B2 (en) * | 2004-03-03 | 2012-12-25 | Advanced Technology Materials, Inc | Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate |
US20070144384A1 (en) | 2004-05-19 | 2007-06-28 | Fuji Photo Film Co., Ltd | Image recording method |
US8030263B2 (en) | 2004-07-01 | 2011-10-04 | Air Products And Chemicals, Inc. | Composition for stripping and cleaning and use thereof |
CN101010421B (zh) | 2004-08-31 | 2011-08-03 | 三洋化成工业株式会社 | 表面活性剂 |
US7923423B2 (en) * | 2005-01-27 | 2011-04-12 | Advanced Technology Materials, Inc. | Compositions for processing of semiconductor substrates |
KR101331747B1 (ko) * | 2005-01-27 | 2013-11-20 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 반도체 기판 처리 조성물 |
JP4678673B2 (ja) * | 2005-05-12 | 2011-04-27 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
US7700533B2 (en) | 2005-06-23 | 2010-04-20 | Air Products And Chemicals, Inc. | Composition for removal of residue comprising cationic salts and methods using same |
JP4741315B2 (ja) * | 2005-08-11 | 2011-08-03 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | ポリマー除去組成物 |
US8263539B2 (en) * | 2005-10-28 | 2012-09-11 | Dynaloy, Llc | Dynamic multi-purpose composition for the removal of photoresists and methods for its use |
US20070243773A1 (en) | 2005-10-28 | 2007-10-18 | Phenis Michael T | Dynamic multi-purpose composition for the removal of photoresists and method for its use |
US20070224811A1 (en) * | 2006-03-16 | 2007-09-27 | Xinming Wang | Substrate processing method and substrate processing apparatus |
US7402341B2 (en) * | 2006-05-23 | 2008-07-22 | Printar Ltd. | Methods and compositions for printable surface pre-treatment |
US8288330B2 (en) | 2006-05-26 | 2012-10-16 | Air Products And Chemicals, Inc. | Composition and method for photoresist removal |
JP4777197B2 (ja) * | 2006-09-11 | 2011-09-21 | 富士フイルム株式会社 | 洗浄液及びそれを用いた洗浄方法 |
US20080139436A1 (en) | 2006-09-18 | 2008-06-12 | Chris Reid | Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material |
US20080163892A1 (en) * | 2007-01-08 | 2008-07-10 | United Microelectronics Corp. | Cleaning wafer including detergent layer for exposure apparatus of immersion lithography system, composition of detergent layer, method of using cleaning wafer and application system |
US20080223414A1 (en) | 2007-03-13 | 2008-09-18 | Dober Chemical Corporation | Compositions and methods for removing titanium dioxide from surfaces |
US20080230092A1 (en) * | 2007-03-23 | 2008-09-25 | Alexander Sou-Kang Ko | Method and apparatus for single-substrate cleaning |
US7799139B2 (en) | 2007-03-28 | 2010-09-21 | Intel Corporation | Chemistry for removal of photo resist, organic sacrificial fill material and etch polymer |
CN101827928B (zh) * | 2007-08-08 | 2012-10-03 | 荒川化学工业株式会社 | 用于除去无铅助焊剂的清洁剂组合物以及用于除去无铅助焊剂的方法 |
KR101488265B1 (ko) * | 2007-09-28 | 2015-02-02 | 삼성디스플레이 주식회사 | 박리 조성물 및 박리 방법 |
US20090120457A1 (en) | 2007-11-09 | 2009-05-14 | Surface Chemistry Discoveries, Inc. | Compositions and method for removing coatings and preparation of surfaces for use in metal finishing, and manufacturing of electronic and microelectronic devices |
US8084406B2 (en) * | 2007-12-14 | 2011-12-27 | Lam Research Corporation | Apparatus for particle removal by single-phase and two-phase media |
US20090163402A1 (en) * | 2007-12-19 | 2009-06-25 | Eastman Chemical Company | Fabric softener |
US8404626B2 (en) * | 2007-12-21 | 2013-03-26 | Lam Research Corporation | Post-deposition cleaning methods and formulations for substrates with cap layers |
US7687447B2 (en) * | 2008-03-13 | 2010-03-30 | Air Products And Chemicals, Inc. | Semi-aqueous stripping and cleaning composition containing aminobenzenesulfonic acid |
JP5066471B2 (ja) | 2008-03-26 | 2012-11-07 | 富士フイルム株式会社 | 平版印刷版原版の製版方法 |
US8314055B2 (en) * | 2008-06-02 | 2012-11-20 | Lam Research Corporation | Materials and systems for advanced substrate cleaning |
US7968506B2 (en) * | 2008-09-03 | 2011-06-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene process |
US8925001B2 (en) * | 2008-09-12 | 2014-12-30 | At&T Intellectual Property I, L.P. | Media stream generation based on a category of user expression |
US8105997B2 (en) * | 2008-11-07 | 2012-01-31 | Lam Research Corporation | Composition and application of a two-phase contaminant removal medium |
US8227394B2 (en) * | 2008-11-07 | 2012-07-24 | Lam Research Corporation | Composition of a cleaning material for particle removal |
JP5639755B2 (ja) * | 2008-11-27 | 2014-12-10 | 富士フイルム株式会社 | 有機溶剤を含有する現像液を用いたパターン形成方法及びこれに用いるリンス液 |
US8444768B2 (en) | 2009-03-27 | 2013-05-21 | Eastman Chemical Company | Compositions and methods for removing organic substances |
US8309502B2 (en) | 2009-03-27 | 2012-11-13 | Eastman Chemical Company | Compositions and methods for removing organic substances |
-
2009
- 2009-03-27 US US12/413,085 patent/US8444768B2/en not_active Expired - Fee Related
-
2010
- 2010-03-15 KR KR1020117025376A patent/KR20110137818A/ko not_active Application Discontinuation
- 2010-03-15 EP EP10711102A patent/EP2411874A1/en not_active Withdrawn
- 2010-03-15 JP JP2012501991A patent/JP2012522264A/ja active Pending
- 2010-03-15 CN CN2010800237981A patent/CN102449554A/zh active Pending
- 2010-03-15 WO PCT/US2010/000776 patent/WO2010110848A1/en active Application Filing
- 2010-03-15 SG SG2011066636A patent/SG174416A1/en unknown
- 2010-03-25 TW TW099108946A patent/TW201039386A/zh unknown
-
2012
- 2012-01-10 US US13/346,877 patent/US8389455B2/en not_active Expired - Fee Related
-
2013
- 2013-01-02 US US13/732,710 patent/US20130123411A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3734874A (en) * | 1970-02-27 | 1973-05-22 | Eastman Kodak Co | Polyesters and polyesteramides containing ether groups and sulfonate groups in the form of a metallic salt |
EP0388592A2 (de) * | 1989-01-31 | 1990-09-26 | Hoechst Aktiengesellschaft | Entschichtungslösung für elektrophotographisch bebilderte Platten und Verfahren zum Entschichten solcher Platten |
US6127097A (en) * | 1991-10-22 | 2000-10-03 | International Business Machines Corporation | Photoresist develop and strip solvent compositions and method for their use |
US20040029395A1 (en) * | 2002-08-12 | 2004-02-12 | Peng Zhang | Process solutions containing acetylenic diol surfactants |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10816505B2 (en) | 2006-06-29 | 2020-10-27 | Life Technologies Corporation | Method for treating a semiconductor device |
US10527580B2 (en) | 2006-07-05 | 2020-01-07 | Life Technologies Corporation | Method for treating a semiconductor device |
CN103108945A (zh) * | 2010-09-27 | 2013-05-15 | 伊士曼化工公司 | 用于从基底上去除物质的方法和组合物 |
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US20120108486A1 (en) | 2012-05-03 |
EP2411874A1 (en) | 2012-02-01 |
US8444768B2 (en) | 2013-05-21 |
US20100242998A1 (en) | 2010-09-30 |
TW201039386A (en) | 2010-11-01 |
WO2010110848A1 (en) | 2010-09-30 |
JP2012522264A (ja) | 2012-09-20 |
US8389455B2 (en) | 2013-03-05 |
SG174416A1 (en) | 2011-10-28 |
KR20110137818A (ko) | 2011-12-23 |
US20130123411A1 (en) | 2013-05-16 |
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