CN102244092A - 一种横向高压功率半导体器件的结终端结构 - Google Patents
一种横向高压功率半导体器件的结终端结构 Download PDFInfo
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- CN102244092A CN102244092A CN2011101663126A CN201110166312A CN102244092A CN 102244092 A CN102244092 A CN 102244092A CN 2011101663126 A CN2011101663126 A CN 2011101663126A CN 201110166312 A CN201110166312 A CN 201110166312A CN 102244092 A CN102244092 A CN 102244092A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 18
- 230000009977 dual effect Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 41
- 238000000034 method Methods 0.000 abstract description 6
- 230000000295 complement effect Effects 0.000 abstract 1
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 33
- 230000015556 catabolic process Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 8
- 238000005457 optimization Methods 0.000 description 5
- 238000004088 simulation Methods 0.000 description 5
- 241001212149 Cathetus Species 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
- H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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Cited By (25)
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CN102623509A (zh) * | 2012-04-19 | 2012-08-01 | 成都芯源***有限公司 | 高压开关器件及其制作方法 |
CN102623504A (zh) * | 2012-03-29 | 2012-08-01 | 无锡新洁能功率半导体有限公司 | 具有新型终端结构的超结半导体器件及其制造方法 |
CN103165657A (zh) * | 2013-03-13 | 2013-06-19 | 电子科技大学 | 一种横向高压功率半导体器件的结终端结构 |
CN103268886A (zh) * | 2013-05-13 | 2013-08-28 | 电子科技大学 | 一种横向高压功率器件的结终端结构 |
CN103928528A (zh) * | 2014-04-28 | 2014-07-16 | 电子科技大学 | 一种横向高压功率半导体器件的结终端结构 |
CN103928500A (zh) * | 2014-04-28 | 2014-07-16 | 电子科技大学 | 一种横向高压功率半导体器件的结终端结构 |
CN103928527A (zh) * | 2014-04-28 | 2014-07-16 | 电子科技大学 | 一种横向高压功率半导体器件的结终端结构 |
CN104134661A (zh) * | 2013-05-02 | 2014-11-05 | 无锡华润上华半导体有限公司 | 一种高压集成电路及其制造方法 |
CN104638013A (zh) * | 2015-01-30 | 2015-05-20 | 上海华虹宏力半导体制造有限公司 | 隔离型nldmos器件 |
CN104979404A (zh) * | 2015-05-22 | 2015-10-14 | 西安电子科技大学 | 一种具有阶梯场氧的横向双扩散金属氧化物半导体场效应管 |
CN105047693A (zh) * | 2015-08-05 | 2015-11-11 | 电子科技大学 | 一种横向高压功率器件的结终端结构 |
CN105140269A (zh) * | 2015-08-05 | 2015-12-09 | 电子科技大学 | 一种横向高压功率器件的结终端结构 |
CN105206658A (zh) * | 2015-08-28 | 2015-12-30 | 电子科技大学 | 一种横向高压功率器件的结终端结构 |
CN105206657A (zh) * | 2015-08-28 | 2015-12-30 | 电子科技大学 | 一种横向高压功率器件的结终端结构 |
CN106098753A (zh) * | 2016-08-25 | 2016-11-09 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106098754A (zh) * | 2016-08-25 | 2016-11-09 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106129118A (zh) * | 2016-08-25 | 2016-11-16 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106158972A (zh) * | 2015-09-03 | 2016-11-23 | 珀尔微斯电子有限公司 | 制造高压功率场效应管的***及方法 |
CN106298874A (zh) * | 2016-08-25 | 2017-01-04 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN107452794A (zh) * | 2016-06-01 | 2017-12-08 | 北大方正集团有限公司 | 一种高压横向扩散金属氧化物半导体 ldmos |
CN110534514A (zh) * | 2019-09-05 | 2019-12-03 | 电子科技大学 | 一种横向高压功率半导体器件的槽型终端结构 |
CN111430448A (zh) * | 2020-03-30 | 2020-07-17 | 电子科技大学 | 一种横向功率半导体器件 |
CN111710720A (zh) * | 2020-07-10 | 2020-09-25 | 杰华特微电子(杭州)有限公司 | 横向双扩散晶体管及其制造方法 |
CN111987147A (zh) * | 2020-10-26 | 2020-11-24 | 江苏应能微电子有限公司 | 一种功率半导体器件 |
CN116153979A (zh) * | 2022-12-28 | 2023-05-23 | 苏州华太电子技术股份有限公司 | Ldmos终端结构以及ldmos终端结构的制作方法 |
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CN101221986A (zh) * | 2008-01-29 | 2008-07-16 | 电子科技大学 | 具有栅极场板的薄膜soi厚栅氧功率器件 |
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CN101465354A (zh) * | 2008-12-11 | 2009-06-24 | 电子科技大学 | 等离子平板显示器扫描驱动芯片用高压器件 |
CN101980364A (zh) * | 2010-08-31 | 2011-02-23 | 电子科技大学 | 一种薄层soi复合功率器件 |
CN102024825A (zh) * | 2010-09-21 | 2011-04-20 | 电子科技大学 | 一种用于负电源电压的薄层soi集成功率器件 |
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CN101221986A (zh) * | 2008-01-29 | 2008-07-16 | 电子科技大学 | 具有栅极场板的薄膜soi厚栅氧功率器件 |
CN101431097A (zh) * | 2008-12-11 | 2009-05-13 | 电子科技大学 | 一种薄层soi ligbt器件 |
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CN105206658B (zh) * | 2015-08-28 | 2017-11-03 | 电子科技大学 | 一种横向高压功率器件的结终端结构 |
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CN106098754A (zh) * | 2016-08-25 | 2016-11-09 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106098753B (zh) * | 2016-08-25 | 2019-02-12 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN106298874A (zh) * | 2016-08-25 | 2017-01-04 | 电子科技大学 | 横向高压功率器件的结终端结构 |
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CN106098753A (zh) * | 2016-08-25 | 2016-11-09 | 电子科技大学 | 横向高压功率器件的结终端结构 |
CN110534514A (zh) * | 2019-09-05 | 2019-12-03 | 电子科技大学 | 一种横向高压功率半导体器件的槽型终端结构 |
CN110534514B (zh) * | 2019-09-05 | 2022-01-25 | 电子科技大学 | 一种横向高压功率半导体器件的槽型终端结构 |
CN111430448A (zh) * | 2020-03-30 | 2020-07-17 | 电子科技大学 | 一种横向功率半导体器件 |
CN111430448B (zh) * | 2020-03-30 | 2021-08-17 | 电子科技大学 | 一种横向功率半导体器件 |
CN111710720A (zh) * | 2020-07-10 | 2020-09-25 | 杰华特微电子(杭州)有限公司 | 横向双扩散晶体管及其制造方法 |
CN111710720B (zh) * | 2020-07-10 | 2022-07-19 | 杰华特微电子股份有限公司 | 横向双扩散晶体管及其制造方法 |
CN111987147A (zh) * | 2020-10-26 | 2020-11-24 | 江苏应能微电子有限公司 | 一种功率半导体器件 |
CN116153979A (zh) * | 2022-12-28 | 2023-05-23 | 苏州华太电子技术股份有限公司 | Ldmos终端结构以及ldmos终端结构的制作方法 |
CN116153979B (zh) * | 2022-12-28 | 2023-11-03 | 苏州华太电子技术股份有限公司 | Ldmos终端结构以及ldmos终端结构的制作方法 |
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