CN102153951B - 含有聚硅氮烷的涂布组合物 - Google Patents
含有聚硅氮烷的涂布组合物 Download PDFInfo
- Publication number
- CN102153951B CN102153951B CN201110006067.2A CN201110006067A CN102153951B CN 102153951 B CN102153951 B CN 102153951B CN 201110006067 A CN201110006067 A CN 201110006067A CN 102153951 B CN102153951 B CN 102153951B
- Authority
- CN
- China
- Prior art keywords
- molecular weight
- coating composition
- perhydropolysilazane
- weight
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/007—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D7/00—Features of coating compositions, not provided for in group C09D5/00; Processes for incorporating ingredients in coating compositions
- C09D7/20—Diluents or solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Wood Science & Technology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010001883A JP5172867B2 (ja) | 2010-01-07 | 2010-01-07 | ポリシラザンを含むコーティング組成物 |
JP2010-001883 | 2010-01-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102153951A CN102153951A (zh) | 2011-08-17 |
CN102153951B true CN102153951B (zh) | 2015-03-25 |
Family
ID=44435640
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110006067.2A Active CN102153951B (zh) | 2010-01-07 | 2011-01-06 | 含有聚硅氮烷的涂布组合物 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5172867B2 (zh) |
KR (1) | KR101711662B1 (zh) |
CN (1) | CN102153951B (zh) |
TW (1) | TWI568806B (zh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5970197B2 (ja) * | 2012-02-08 | 2016-08-17 | メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 | 無機ポリシラザン樹脂 |
JP6107188B2 (ja) * | 2012-03-13 | 2017-04-05 | セントラル硝子株式会社 | 防曇膜形成材料、防曇膜形成用塗布液、防曇性物品、及びそれらの製法 |
KR101556672B1 (ko) | 2012-12-27 | 2015-10-01 | 제일모직 주식회사 | 실리카계 절연층 형성용 조성물, 실리카계 절연층 형성용 조성물의 제조방법, 실리카계 절연층 및 실리카계 절연층의 제조방법 |
JP2014213318A (ja) * | 2013-04-30 | 2014-11-17 | チェイル インダストリーズインコーポレイテッド | 改質シリカ膜の製造方法、塗工液、及び改質シリカ膜 |
US20140322486A1 (en) * | 2013-04-30 | 2014-10-30 | Shigeto Kobori | Method for preparing modified silica film, coating liquid for the same and modified silica film prepared from the same |
JP6104785B2 (ja) * | 2013-12-09 | 2017-03-29 | アーゼッド・エレクトロニック・マテリアルズ(ルクセンブルグ)ソシエテ・ア・レスポンサビリテ・リミテ | ペルヒドロポリシラザン、およびそれを含む組成物、ならびにそれを用いたシリカ質膜の形成方法 |
JP6198685B2 (ja) * | 2014-07-01 | 2017-09-20 | 国立大学法人東京工業大学 | ポリベンゾオキサジン−シリカ複合体およびその製造方法 |
KR101806328B1 (ko) * | 2014-10-07 | 2017-12-07 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 |
US10020185B2 (en) | 2014-10-07 | 2018-07-10 | Samsung Sdi Co., Ltd. | Composition for forming silica layer, silica layer, and electronic device |
KR101833800B1 (ko) * | 2014-12-19 | 2018-03-02 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막의 제조방법 및 상기 실리카계 막을 포함하는 전자 소자 |
KR101837971B1 (ko) * | 2014-12-19 | 2018-03-13 | 삼성에스디아이 주식회사 | 실리카계 막 형성용 조성물, 실리카계 막, 및 전자 디바이스 |
KR20170014946A (ko) | 2015-07-31 | 2017-02-08 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 실리카 막의 제조방법 및 실리카 막 |
KR102066271B1 (ko) * | 2017-04-18 | 2020-01-14 | 단국대학교 천안캠퍼스 산학협력단 | 정전척 실링방법 |
JP6891968B2 (ja) * | 2017-09-27 | 2021-06-18 | 信越化学工業株式会社 | 含フッ素コーティング剤組成物、表面処理剤及び物品 |
CN108329506A (zh) * | 2018-03-01 | 2018-07-27 | 苏州维洛克电子科技有限公司 | 含全氢聚硅氮烷-尿素涂层的聚酯薄膜的制备方法 |
KR102432933B1 (ko) | 2019-05-17 | 2022-08-12 | 삼성에스디아이 주식회사 | 실리카 막 형성용 조성물, 그로부터 형성된 실리카 막, 및 상기 실리카 막을 포함하는 전자 소자 |
KR102094647B1 (ko) * | 2019-10-31 | 2020-03-31 | 화성이엔씨(주) | 상온포장 가능한 이액형 미끄럼방지 차열포장재 및 이의 제조방법 |
CN110925779A (zh) * | 2019-12-11 | 2020-03-27 | 大连东泰产业废弃物处理有限公司 | 一种含有全氢聚硅氮烷废有机溶剂用于焚烧炉的利用方法 |
JP7222948B2 (ja) | 2020-04-23 | 2023-02-15 | 信越化学工業株式会社 | 高硬度皮膜形成用コーティング剤組成物 |
KR102265267B1 (ko) * | 2021-01-13 | 2021-06-17 | (주)에스케이솔라에너지 | 건축물에 적용 가능한 컬러태양광모듈 |
KR102253483B1 (ko) * | 2021-01-13 | 2021-05-20 | (주)에스케이솔라에너지 | 건축물에 적용 가능하고 효율이 개선된 컬러태양광모듈 |
Citations (3)
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CN1608314A (zh) * | 2001-12-27 | 2005-04-20 | 克拉瑞特国际有限公司 | 用于处理聚硅氮烷的溶剂和采用这种溶剂处理聚硅氮烷的方法 |
CN101001930A (zh) * | 2004-08-13 | 2007-07-18 | Az电子材料(日本)株式会社 | 具有较小平带位移的硅质膜及其制备方法 |
CN101111575A (zh) * | 2005-02-02 | 2008-01-23 | Az电子材料(日本)株式会社 | 聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法 |
Family Cites Families (13)
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JP2613787B2 (ja) | 1987-08-13 | 1997-05-28 | 財団法人石油産業活性化センター | 無機シラザン高重合体、その製造方法及びその用途 |
JPH03232709A (ja) * | 1990-02-09 | 1991-10-16 | Tonen Corp | 窒化珪素繊維用ポリシラザン及びその製法 |
WO1993002472A1 (en) * | 1991-07-16 | 1993-02-04 | Catalysts & Chemicals Industries Co., Ltd. | Semiconductor device and production thereof |
JPH05148720A (ja) * | 1991-11-22 | 1993-06-15 | Honda Motor Co Ltd | ポリシラザン繊維、その製造方法及びセラミツク繊維 |
US5459114A (en) * | 1992-11-26 | 1995-10-17 | Tonen Corporation | Method for producing ceramic products |
JP3208040B2 (ja) | 1995-04-04 | 2001-09-10 | 触媒化成工業株式会社 | シリカ系被膜形成用塗布液および被膜付基材 |
JP5020425B2 (ja) * | 2000-04-25 | 2012-09-05 | Azエレクトロニックマテリアルズ株式会社 | 微細溝をシリカ質材料で埋封する方法 |
KR100362834B1 (ko) | 2000-05-02 | 2002-11-29 | 삼성전자 주식회사 | 반도체 장치의 산화막 형성 방법 및 이에 의하여 제조된 반도체 장치 |
CN100444331C (zh) * | 2003-11-11 | 2008-12-17 | 三星电子株式会社 | 旋涂玻璃组合物和在半导体制造工序中使用该旋涂玻璃形成氧化硅层的方法 |
DE102004011212A1 (de) * | 2004-03-04 | 2005-09-29 | Clariant International Limited | Perhydropolysilazane enthaltende Beschichtungen für Metall- und Polymeroberflächen |
JP2009158887A (ja) * | 2007-12-28 | 2009-07-16 | Jgc Catalysts & Chemicals Ltd | 半導体装置およびその製造方法 |
JP5306669B2 (ja) * | 2008-02-29 | 2013-10-02 | AzエレクトロニックマテリアルズIp株式会社 | シリカ質膜の形成方法およびそれにより形成されたシリカ質膜 |
JP5692736B2 (ja) * | 2009-10-05 | 2015-04-01 | 株式会社Adeka | 絶縁膜形成用塗布液、それを用いた絶縁膜 |
-
2010
- 2010-01-07 JP JP2010001883A patent/JP5172867B2/ja active Active
- 2010-12-28 KR KR1020100136639A patent/KR101711662B1/ko active IP Right Grant
-
2011
- 2011-01-06 CN CN201110006067.2A patent/CN102153951B/zh active Active
- 2011-01-06 TW TW100100458A patent/TWI568806B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1608314A (zh) * | 2001-12-27 | 2005-04-20 | 克拉瑞特国际有限公司 | 用于处理聚硅氮烷的溶剂和采用这种溶剂处理聚硅氮烷的方法 |
CN101001930A (zh) * | 2004-08-13 | 2007-07-18 | Az电子材料(日本)株式会社 | 具有较小平带位移的硅质膜及其制备方法 |
CN101111575A (zh) * | 2005-02-02 | 2008-01-23 | Az电子材料(日本)株式会社 | 聚硅氮烷处理溶剂及用该溶剂处理聚硅氮烷的方法 |
Also Published As
Publication number | Publication date |
---|---|
TWI568806B (zh) | 2017-02-01 |
JP2011142207A (ja) | 2011-07-21 |
TW201132716A (en) | 2011-10-01 |
CN102153951A (zh) | 2011-08-17 |
KR20110081043A (ko) | 2011-07-13 |
JP5172867B2 (ja) | 2013-03-27 |
KR101711662B1 (ko) | 2017-03-02 |
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Address after: Tokyo, Japan Applicant after: AZ Electronic Materials (Japan) K. K. Address before: Tokyo, Japan Applicant before: AZ electronic materials (Japan) Co., Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: AZ ELECTRONIC MATERIALS (JAPAN) K.K. TO: AZ ELECTRONIC MATERIALS IP (JAPAN) K.K. |
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