CN101828145B - 具有集成光伏元件的显示器 - Google Patents
具有集成光伏元件的显示器 Download PDFInfo
- Publication number
- CN101828145B CN101828145B CN2008801122193A CN200880112219A CN101828145B CN 101828145 B CN101828145 B CN 101828145B CN 2008801122193 A CN2008801122193 A CN 2008801122193A CN 200880112219 A CN200880112219 A CN 200880112219A CN 101828145 B CN101828145 B CN 101828145B
- Authority
- CN
- China
- Prior art keywords
- photovoltaic material
- display
- area
- array
- inactive area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims abstract description 168
- 238000000034 method Methods 0.000 claims description 24
- 230000005540 biological transmission Effects 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 238000002955 isolation Methods 0.000 claims description 6
- 238000002310 reflectometry Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 description 33
- 239000000758 substrate Substances 0.000 description 24
- 238000005516 engineering process Methods 0.000 description 19
- 239000010408 film Substances 0.000 description 19
- 239000004020 conductor Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- 230000008901 benefit Effects 0.000 description 11
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 9
- 230000004913 activation Effects 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 9
- 238000013461 design Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000010276 construction Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 8
- 230000008093 supporting effect Effects 0.000 description 8
- 230000005611 electricity Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000003491 array Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 3
- 239000006096 absorbing agent Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
- 230000002452 interceptive effect Effects 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000004033 plastic Substances 0.000 description 3
- 229920003023 plastic Polymers 0.000 description 3
- 230000011514 reflex Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- IRLPACMLTUPBCL-KQYNXXCUSA-N 5'-adenylyl sulfate Chemical compound C1=NC=2C(N)=NC=NC=2N1[C@@H]1O[C@H](COP(O)(=O)OS(O)(=O)=O)[C@@H](O)[C@H]1O IRLPACMLTUPBCL-KQYNXXCUSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 229910015202 MoCr Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- ROTPTZPNGBUOLZ-UHFFFAOYSA-N arsenic boron Chemical compound [B].[As] ROTPTZPNGBUOLZ-UHFFFAOYSA-N 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 238000009412 basement excavation Methods 0.000 description 1
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 description 1
- 230000002520 cambial effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000001976 improved effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000008447 perception Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007666 vacuum forming Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
- G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
- G02B26/0841—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting element being moved or deformed by electrostatic means
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/043—Mechanically stacked PV cells
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13324—Circuits comprising solar cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明揭示一种显示器,其具有集成在所述显示器的前侧和/或后侧上的经图案化光伏(PV)材料(81)。光可穿过显示器内的无效区域(103)而到达位于所述显示器后方的PV材料(81)。显示器产生的光也可到达显示器后方的PV材料(81)。位于显示器前方的经图案化PV材料(81)可收集环境光以及显示器产生的光两者。
Description
技术领域
本发明大体上涉及用于有效地显示图像的显示器装置。
背景技术
有效显示器可由完全或部分反射、透射或发射的像素组成。因此,显示器可以通过完全或部分反射入射环境光而操作的像素、发射光的像素或透射性像素(其中光从显示器内产生并投射到透射性像素上)来产生图像。反射性显示器技术可包含(但不限于)液晶、MEMS(例如,干涉式调制器)、电泳(例如,电子墨水或电子纸张)以及其它使用被反射环境光来产生图像的显示器技术。发射性显示器包含具有背光来照明有效透射性像素的显示器,例如液晶显示器(LCD)或薄膜晶体管液晶显示器(TFT LCD),或者其中有效像素本身产生或发射光的显示器,例如真空荧光、发光二极管(LED)、有机发光二极管(OLED)或表面传导电子发射体显示器。
显示器可包含MEMS装置,例如干涉式调制器。如本文所使用,术语干涉式调制器或干涉式光调制器指的是一种使用光学干涉原理选择性地吸收且/或反射光的装置。在一些布置中,干涉式调制器可包括一对导电板,其中之一或两者可能整体或部分透明且/或具有反射性,且能够在施加适当电信号时进行相对运动。举例来说,一个板可包括沉积在衬底上的固定层,且另一个板可包括通过气隙与固定层分离的金属薄膜。如本文更详细描述,一个板相对于另一个板的位置可改变入射在干涉式调制器上的光的光学干涉。这些装置具有广范围的应用,且在此项技术中,利用且/或修改这些类型装置的特性使得其特征可被发掘用于改进现有产品和创建尚未开发的新产品,将是有益的。
发明内容
在一个实施例中,一种显示器装置朝前侧显示图像,其中后侧与前侧相对。显示器装置包含显示器和光伏电池。显示器包含阵列区,所述阵列区包含有效像素区域和无效区域。光伏电池包含光伏材料。光伏材料形成在阵列区的前侧和后侧的一者上。光伏材料经图案化。
在另一实施例中,提供一种制造显示器装置的方法。显示器装置经配置以朝前侧显示图像,其中后侧与前侧相对。所述方法包含提供包括阵列区的显示器。所述阵列区包括有效像素区域和无效区域。所述方法还包含将经图案化光伏材料设置于阵列区的所述前侧和所述后侧的一者上。
在又一实施例中,提供一种收集光以转化为电的方法。所述方法包含将光接收在显示器的阵列区的前侧和后侧的一者处的经图案化光伏材料中。所述方法还包含将所述光转化为电。
在一替代实施例中,一种显示器装置朝前侧显示图像,其中后侧与前侧相对。显示器装置包含用于显示多变的像素化图像(pixilated image)的装置,和用于将光转化为电的装置。所述转化装置经图案化并定位在显示器装置的前侧和后侧的一者上。
附图说明
随附的示意图中说明本文揭示的实例实施例,所述示意图仅出于说明性目的。以下图式不一定按比例绘制。
图1是描绘干涉式调制器显示器的一个实施例的一部分的等角视图,其中第一干涉式调制器的可移动反射层处于松弛位置,且第二干涉式调制器的可移动反射层处于激活位置。
图2是说明并入有3×3干涉式调制器显示器的电子装置的一个实施例的***框图。
图3是图1的干涉式调制器的一个示范性实施例的可移动镜位置对所施加电压的图。
图4是可用于驱动干涉式调制器显示器的一组行和列电压的说明。
图5A和5B说明可用于将显示器数据的帧写入到图2的3×3干涉式调制器显示器的行和列信号的一个示范性时序图。
图6A和图6B是说明包括多个干涉式调制器的视觉显示器装置的实施例的***框图。
图7A是图1的装置的横截面。
图7B是干涉式调制器的替代实施例的横截面。
图7C是干涉式调制器的另一替代实施例的横截面。
图7D是干涉式调制器的又一替代实施例的横截面。
图7E是干涉式调制器的额外替代实施例的横截面。
图7F是干涉式调制器的阵列的仰视平面图。
图8示意说明包括p-n结的光伏电池。
图9A是示意说明包括沉积的薄膜光伏有效材料的光伏电池的框图。
图9B是示意说明包括干涉式增强型光伏堆叠的光伏电池的框图。
图10说明具有有效像素的阵列和像素之间的无效区域的显示器。
图11是出于说明无效区域中体外光的可能来源的目的的具有有效像素的阵列和无效区域的显示器的示意横截面。
图12是具有有效像素的阵列和无效区域的显示器的示意横截面,其中经图案化PV黑色掩模形成在有效像素前方。
图13是具有有效像素的阵列和无效区域的显示器的示意横截面,其中经图案化PV黑色掩模形成在有效像素后方。
图14是具有形成在阵列后方的经图案化PV黑色掩模的干涉式阵列的示意等角视图。
图15A是具有集成的前侧PV黑色掩模的干涉式调制器的实施例的示意横截面。
图15B是具有集成的后侧PV黑色掩模的干涉式调制器的另一实施例的示意横截面。
图16是说明掩蔽PV黑色掩模的方法的实施例中的初始步骤的示意横截面。
图17A和17B是说明用于将光伏材料图案化以形成PV黑色掩模的实施例以及将经图案化PV黑色掩模的隔离的特征互连的方法的示意横截面。
具体实施方式
尽管本文论述了某些实施例和实例,但应了解,发明性标的物延伸超越具体揭示的实施例到其它替代实施例和/或本发明的用途及其明显修改和等效物。预期本文揭示的本发明的范围不应受具体揭示的实施例限制。因此,举例来说,在本文揭示的任何方法或工艺中,组成所述方法/工艺的动作或操作可以任何适宜的次序执行且不一定限于任何具体揭示的次序。已在适当之处描述实施例的各个方面和优点。应理解,不一定所有此类方面或优点可根据任何具体实施例来实现。因此,举例来说,应认识到,可以实现或优化如本文教示的一个优点或优点的群组的方式实行各种实施例,而不一定实现如本文可教示或提出的其它方面或优点。以下详细描述针对本发明的某些特定实施例。然而,本发明可以许多不同方式实施。本文描述的实施例可实施于较广范围的显示器装置中。
在本描述内容中参看了附图,附图中所有相同部分用相同标号标示。所述实施例可实施在经配置以显示不论运动(例如,视频)还是固定(例如,静止图像)的且不论文字还是图画的图像的任何装置中。更明确地说,预期所述实施例可实施在多种电子装置中或与多种电子装置关联,所述多种电子装置例如为(但不限于)移动电话、无线装置、个人数据助理(PDA)、手持式或便携式计算机、GPS接收器/导航器、相机、MP3播放器、摄像机、游戏控制台、手表、时钟、计算器、电视监视器、平板显示器、计算机监视器、汽车显示器(例如,里程表显示器等)、驾驶舱控制器和/或显示器、摄像机视图的显示器(例如,车辆中后视摄像机的显示器)、电子相片、电子广告牌或指示牌、投影仪、建筑结构、包装和美学结构(例如,一件珠宝上的图像显示器)。
光伏(PV)材料可与例如发射、透射和反射或部分反射(透射反射)显示器等有效显示器集成。PV材料经图案化以收集显示器的无效区域中的光,所述无效区域例如为间隙、空间、孔、间隔件、支柱、柱、轨道或由例如空气、二氧化硅或其它材料等透明或半透明材料形成的其它支撑结构。PV材料可形成在显示器前方或后方。PV材料可以对应于显示器的无效区域中的至少一些的图案形成。
最初,图1-7F说明干涉式调制器(IMOD)显示器的一些基本原理。图8-9说明PV电池和装置的一些基本原理。图10-17B说明其中显示器与用以掩蔽IMOD或其它类型的显示器的无效区域的经图案化光伏(PV)材料集成的实施例。
图1中说明包括干涉式MEMS显示器元件的一个干涉式调制器显示器的实施例。在这些装置中,像素处于明亮状态或黑暗状态。在明亮(“松弛”或“开启”)状态下,显示器元件将入射可见光的大部分反射到用户。当在黑暗(“激活”或“关闭”)状态下时,显示器元件将极少的入射可见光反射到用户。依据实施例而定,可颠倒“接通”和“断开”状态的光反射性质。MEMS像素可经配置以主要在所选颜色下反射,从而除了黑色和白色以外还允许彩色显示器。
图1是描绘视觉显示器的一系列像素中的两个邻近像素的等角视图,其中每一像素包括MEMS干涉式调制器。在一些实施例中,干涉式调制器显示器包括这些干涉式调制器的一行/列阵列。每一干涉式调制器包含一对反射层,其定位成彼此相距可变且可控制的距离以形成具有至少一个可变尺寸的谐振光学间隙。在一个实施例中,可在两个位置之间移动所述反射层之一。在第一位置(本文中称为松弛位置)中,可移动反射层定位成距固定部分反射层相对较大的距离。在第二位置(本文中称为激活位置)中,可移动反射层定位成更紧密邻近所述部分反射层。视可移动反射层的位置而定,从所述两个层反射的入射光相长地或相消地进行干涉,从而针对每一像素产生全反射状态或非反射状态。
图1中像素阵列的所描绘部分包含两个邻近干涉式调制器12a和12b。在左侧干涉式调制器12a中,说明可移动反射层14a处于距包含部分反射层的光学堆叠16a预定距离处的松弛位置中。在右侧干涉式调制器12b中,说明可移动反射层14b处于邻近于光学堆叠16b的激活位置中。
如本文所引用的光学堆叠16a和16b(统称为光学堆叠16)通常包括若干熔合层(fused layer),所述熔合层可包含例如氧化铟锡(ITO)的电极层、例如铬的部分反射层和透明电介质。因此,光学堆叠16是导电的、部分透明且部分反射的,且可通过(例如)将上述层的一者或一者以上沉积到透明衬底20上来制造。部分反射层可由为部分反射的多种材料(例如,各种金属、半导体及电介质)形成。部分反射层可由一个或一个以上材料层形成,且层中的每一者可由单一材料或材料的组合形成。
在一些实施例中,光学堆叠16的层经图案化成为多个平行条带,且如下文中进一步描述,可在显示器装置中形成行电极。可移动反射层14a、14b(也称为“镜”或“反射体”)可形成为沉积金属层(一层或多层)的一系列平行条带(与行电极16a、16b垂直),以形成沉积在柱18和沉积于柱18之间的介入牺牲材料的顶部上的列。当蚀刻去除牺牲材料时,可移动反射层14a、14b通过所界定的间隙19而与光学堆叠16a、16b分离。例如铝的高度导电且反射的材料可用于反射层14,且这些条带可在显示器装置中形成列电极。应注意,图1可不按比例绘制。在一些实施例中,柱18之间的间隔可大约为10-100um,而间隙19可大约为<1000埃。部分反射层也可称为光学吸收体。因此,可称有效干涉式调制器包括(在一些实施例中)由可变光学腔或间隙分离的吸收体和反射体。
在不施加电压的情况下,间隙19保留在可移动反射层14a与光学堆叠16a之间,其中可移动反射层14a处于机械松弛状态,如图1中的像素12a所说明。然而,当将电位(电压)差施加到选定的行和列时,形成在相应像素处的行电极与列电极的交叉处的电容器变得带电,且静电力将所述电极拉在一起。如果电压足够高,那么可移动反射层14变形且被迫抵靠光学堆叠16。光学堆叠16内的电介质层(在此图中未图示)可防止短路并控制层14与16之间的分离距离,如图1中右侧的被激活像素12b所说明。不管所施加的电位差的极性如何,表现均相同。
图2到图5说明在显示器应用中使用干涉式调制器阵列的一个示范性工艺和***。
图2是说明可并入有干涉式调制器的电子装置的一个实施例的***框图。所述电子装置包含处理器21,其可为任何通用单芯片或多芯片微处理器(例如 8051、Power或),或任何专用微处理器(例如数字信号处理器、微控制器或可编程门阵列)。如此项技术中常规的做法,处理器21可经配置以执行一个或一个以上软件模块。除了执行操作***外,所述处理器可经配置以执行一个或一个以上软件应用程序,包含网络浏览器、电话应用程序、电子邮件程序或任何其它软件应用程序。
在一个实施例中,处理器21还经配置以与阵列驱动器22通信。在一个实施例中,所述阵列驱动器22包含将信号提供到显示器阵列或面板30的行驱动器电路24和列驱动器电路26。在图2中以线1-1展示图1中说明的阵列的横截面。注意,尽管图2为了清楚起见说明干涉式调制器的3×3阵列,但显示器阵列30可含有非常大数目的干涉式调制器,且在行中可具有与列中不同的数目的干涉式调制器(例如,每行300像素乘每列190像素)。
图3是图1的干涉式调制器的一个示范性实施例的可移动镜位置对所施加电压的图。对于MEMS干涉式调制器来说,行/列激活协议可利用如图3中说明的这些装置的滞后性质。干涉式调制器可能需要(例如)10伏的电位差来致使可移动层从松弛状态变形为激活状态。然而,当电压从所述值减小时,可移动层在电压降回10伏以下时维持其状态。在图3的示范性实施例中,可移动层直到电压降到2伏以下时才完全松弛。因此,在图3中所说明的实例中,存在约3到7V的电压范围,其中存在经施加电压窗口,在所述窗口内,装置在松弛状态或激活状态中均是稳定的。此窗口在本文中称为“滞后窗口”或“稳定窗口”。对于具有图3的滞后特性的显示器阵列来说,可设计行/列激活协议使得在行选通期间,已选通行中待激活的像素暴露于约10伏的电压差,且待松弛的像素暴露于接近零伏的电压差。在选通之后,所述像素暴露于约5伏的稳态电压或偏压差,使得其保持在行选通使其所处的任何状态中。在此实例中,每一像素在被写入之后经历3-7伏的“稳定窗口”内的电位差。此特征使图1中说明的像素设计在相同的施加电压条件下在激活或松弛预存在状态下均是稳定的。因为干涉式调制器的每一像素(不论处于激活还是松弛状态)本质上是由固定反射层和移动反射层形成的电容器,所以可在滞后窗口内的一电压下维持此稳定状态而几乎无功率耗散。本质上,如果所施加的电压是固定的,那么没有电流流入像素中。
如下文进一步描述,在典型应用中,可通过根据第一行中所需组的激活像素越过所述组列电极发送一组数据信号(每一数据信号具有某一电压电平)来产生图像的帧。接着将行脉冲施加到第一行电极,从而激活对应于所述组数据信号的像素。接着改变所述组数据信号以对应于第二行中所需组的激活像素。接着将脉冲施加到第二行电极,从而根据数据信号而激活第二行中的适当像素。第一行像素不受第二行脉冲影响,且保持在其在第一行脉冲期间被设定的状态中。可以连续方式对整个系列的行重复此过程以产生帧。通常,通过以每秒某一所需数目的帧连续地重复此过程来用新的图像数据刷新且/或更新所述帧。可使用用于驱动像素阵列的行和列电极以产生图像帧的广泛多种协议。
图4和图5说明用于在图2的3×3阵列上形成显示帧的一个可能的激活协议。图4说明可用于使像素展现出图3的滞后曲线的一组可能的列和行电压电平。在图4的实施例中,激活像素涉及将适当列设定为-Vbias,且将适当行设定为+ΔV,其分别可对应于-5伏和+5伏。松弛像素是通过将适当列设定为+Vbias,且将适当行设定为相同的+ΔV,从而在像素上产生零伏电位差而实现的。在行电压保持在零伏的那些行中,不管列处于+Vbias还是-Vbias,像素在其最初所处的任何状态中均是稳定的。同样如图4中所说明,可使用具有与上述电压的极性相反的极性的电压,例如,激活像素可涉及将适当列设定为+Vbias,且将适当行设定为-ΔV。在此实施例中,释放像素是通过将适当列设定为-Vbias,且将适当行设定为相同的-ΔV,从而在像素上产生零伏电位差而实现的。
图5B是展示施加到图2的3×3阵列的一系列行和列信号的时序图,所述系列的行和列信号将产生图5A中说明的显示器布置,其中被激活像素为非反射的。在对图5A中说明的帧进行写入之前,像素可处于任何状态,且在本实例中所有行最初均处于0伏,且所有列均处于+5伏。在这些所施加的电压的情况下,所有像素在其现有的激活或松弛状态中均是稳定的。
在图5A的帧中,像素(1,1)、(1,2)、(2,2)、(3,2)和(3,3)被激活。为了实现此目的,在行1的“线时间(line time)”期间,将列1和2设定为-5伏,且将列3设定为+5伏。因为所有像素均保持在3-7伏的稳定窗口中,所以这并不改变任何像素的状态。接着用从0升到5伏且返回到零的脉冲选通行1。这激活了(1,1)和(1,2)像素且松弛了(1,3)像素。阵列中其它像素均不受影响。为了视需要设定行2,将列2设定为-5伏,且将列1和3设定为+5伏。施加到行2的相同选通接着将激活像素(2,2)且松弛像素(2,1)和(2,3)。同样,阵列的其它像素均不受影响。通过将列2和3设定为-5伏且将列1设定为+5伏来类似地设定行3。行3选通设定行3像素,如图5A中所示。在对帧进行写入之后,行电位为零,且列电位可保持在+5或-5伏,且接着显示器在图5A的布置中是稳定的。可将相同程序用于数十或数百个行和列的阵列。用于执行行和列激活的电压的时序、序列和电平可在上文所概述的一般原理内广泛变化,且上文的实例仅为示范性的,且任何激活电压方法均可与本文描述的***和方法一起使用。
图6A和图6B是说明显示器装置40的实施例的***框图。显示器装置40可为(例如)蜂窝式电话或移动电话。然而,显示器装置40的相同组件或其稍微变化形式也说明例如电视和便携式媒体播放器等各种类型的显示器装置。
显示器装置40包含外壳41、显示器30、天线43、扬声器45、输入装置48和麦克风46。外壳41通常由多种制造工艺的任一者形成,所述工艺包含注射模制和真空成形。另外,外壳41可由多种材料的任一者制成,所述材料包含(但不限于)塑料、金属、玻璃、橡胶和陶瓷,或其组合。在一个实施例中,外壳41包含可拆装部分(未图示),所述可拆装部分可与其它具有不同颜色或含有不同标记、图片或符号的可拆装部分互换。
如本文中所描述,示范性显示器装置40的显示器30可为包含双稳态显示器(bi-stable display)在内的多种显示器的任一者。在其它实施例中,显示器30包含例如如上所述的等离子体、EL、OLED、STN LCD或TFT LCD的平板显示器,或例如CRT或其它电子管装置的非平板显示器。然而,出于描述本实施例的目的,如本文中所描述,显示器30包含干涉式调制器显示器。
图6B中示意说明示范性显示器装置40的一个实施例的组件。所说明的示范性显示器装置40包含外壳41且可包含至少部分封围在所述外壳41中的额外组件。举例来说,在一个实施例中,示范性显示器装置40包含网络接口27,所述网络接口27包含耦合到收发器47的天线43。收发器47连接到处理器21,处理器21连接到调节硬件52。调节硬件52可经配置以调节信号(例如,对信号进行滤波)。调节硬件52连接到扬声器45和麦克风46。处理器21也连接到输入装置48和驱动器控制器29。驱动器控制器29耦合到帧缓冲器28且耦合到阵列驱动器22,所述阵列驱动器22进而耦合到显示器阵列30。根据特定示范性显示器装置40设计的要求,电源50将功率提供到所有组件。
网络接口27包含天线43和收发器47以使得示范性显示器装置40可经由网络与一个或一个以上装置通信。在一个实施例中,网络接口27也可具有某些处理能力以减轻对处理器21的要求。天线43是用于发射和接收信号的任何天线。在一个实施例中,所述天线根据IEEE 802.11标准(包含IEEE 802.11(a)、(b)或(g))来发射和接收RF信号。在另一实施例中,所述天线根据蓝牙(BLUETOOTH)标准来发射和接收RF信号。在蜂窝式电话的情况下,所述天线经设计以接收CDMA、GSM、AMPS、W-CDMA或其它用于在无线手机网络内通信的已知信号。收发器47预处理从天线43接收到的信号,使得处理器21可接收所述信号并进一步对所述信号进行处理。收发器47还处理从处理器21接收到的信号以使得可经由天线43从示范性显示器装置40发射所述信号。
在一替代实施例中,收发器47可由接收器代替。在又一替代实施例中,网络接口27可由可存储或产生待发送到处理器21的图像数据的图像源代替。举例来说,所述图像源可为数字视频光盘(DVD)或含有图像数据的硬盘驱动器,或产生图像数据的软件模块。
处理器21大体上控制示范性显示器装置40的全部操作。处理器21接收例如来自网络接口27或图像源的经压缩图像数据的数据,并将所述数据处理成原始图像数据或处理成易被处理成原始图像数据的格式。处理器21接着将已处理的数据发送到驱动器控制器29或发送到帧缓冲器28以供存储。原始数据通常是指识别图像内每一位置处的图像特性的信息。举例来说,这些图像特性可包含颜色、饱和度和灰度级。
在一个实施例中,处理器21包含微控制器、CPU或逻辑单元以控制示范性显示器装置40的操作。调节硬件52通常包含放大器和滤波器,以用于将信号发射到扬声器45,且用于从麦克风46接收信号。调节硬件52可为示范性显示器装置40内的离散组件,或可并入在处理器21或其它组件内。
驱动器控制器29直接从处理器21或从帧缓冲器28取得由处理器21产生的原始图像数据,并适当地重新格式化所述原始图像数据以供高速发射到阵列驱动器22。具体来说,驱动器控制器29将原始图像数据重新格式化为具有类似光栅的格式的数据流,使得其具有适于在显示器阵列30上进行扫描的时间次序。接着,驱动器控制器29将已格式化的信息发送到阵列驱动器22。尽管驱动器控制器29(例如LCD控制器)通常与***处理器21关联而作为独立的集成电路(IC),但可以许多方式实施这些控制器。其可作为硬件嵌入处理器21中,作为软件嵌入处理器21中,或与阵列驱动器22一起完全集成在硬件中。
通常,阵列驱动器22从驱动器控制器29接收已格式化的信息且将视频数据重新格式化为一组平行波形,所述波形每秒多次地被施加到来自显示器的x-y像素矩阵的数百且有时数千个引线。
在一个实施例中,驱动器控制器29、阵列驱动器22和显示器阵列30适用于本文描述的任意类型的显示器。举例来说,在一个实施例中,驱动器控制器29是常规显示器控制器或双稳态显示器控制器(例如,干涉式调制器控制器)。在另一实施例中,阵列驱动器22是常规驱动器或双稳态显示器驱动器(例如,干涉式调制器显示器)。在一个实施例中,驱动器控制器29与阵列驱动器22集成在一起。此实施例在例如蜂窝式电话、手表和其它小面积显示器的高度集成***中是常见的。在又一实施例中,显示器阵列30是典型的显示器阵列或双稳态显示器阵列(例如,包含干涉式调制器阵列的显示器)。
输入装置48允许用户控制示范性显示器装置40的操作。在一个实施例中,输入装置48包含例如QWERTY键盘或电话小键盘的小键盘、按钮、开关、触敏屏幕、压敏或热敏薄膜。在一个实施例中,麦克风46是用于示范性显示器装置40的输入装置。当使用麦克风46将数据输入到所述装置时,用户可提供声音命令以便控制示范性显示器装置40的操作。
电源50可包含此项技术中众所周知的多种能量存储装置。举例来说,在一个实施例中,电源50是例如镍镉电池或锂离子电池的可再充电电池。在另一实施例中,电源50是可再生能源、电容器或太阳能电池,包含塑料太阳能电池和太阳能电池涂料。在另一实施例中,电源50经配置以从壁式插座接收功率。
在某些实施方案中,如上文中所描述,控制可编程性驻存在驱动器控制器中,所述驱动器控制器可位于电子显示器***中的若干位置中。在某些情况下,控制可编程性驻存在阵列驱动器22中。上述优化可实施在任何数目的硬件和/或软件组件中且可以各种配置实施。
根据上文陈述的原理而操作的干涉式调制器的结构的细节可广泛变化。举例来说,图7A-7E说明可移动反射层14及其支撑结构的五个不同实施例。图7A是图1的实施例的横截面,其中充当机械和可移动反射层14两者的金属材料条带沉积在垂直延伸的支撑件18上。在图7B中,每一干涉式调制器的可移动反射层14的形状为正方形或矩形,且在系链(tether)32上仅在隅角处附接到支撑件18。在图7C中,可移动反射层14的形状为正方形或矩形,且从可包括柔性金属的可变形层34悬置下来。所述可变形层34直接或间接地连接到围绕可变形层34的周边的衬底20。这些连接在本文中称为支撑件18,其可采取柱、轨道或壁的形式。图7D中说明的实施例,支撑件18包含支柱插塞42,可变形层34搁置在所述支柱插塞42上。如图7A-7C所示,可移动反射层14保持悬置在光学腔或间隙上方,但可变形层34并不通过填充可变形层34与光学堆叠16之间的孔而形成所述支撑件。而是,支撑件18由平坦化材料形成,其用于形成支柱插塞42。图7E中说明的实施例是基于图7D中展示的实施例,但也可适于与图7A-7C中说明的实施例以及未图示的额外实施例的任一者一起发挥作用。在图7E中所示的实施例中,已使用金属或其它导电材料的额外层来形成总线结构44。这允许信号沿着干涉式调制器的背面进行路由,从而消除原本可能必须形成在衬底20上的许多电极。
在例如图7A-7E中所示的那些实施例的实施例中,干涉式调制器充当直接观看装置,其中从透明衬底20的前侧观看图像,所述侧与上面布置有调制器的一侧相对。在这些实施例中,反射层14以光学方式遮蔽在反射层的与衬底20相对侧的干涉式调制器的部分,其包含可变形层34。这允许对遮蔽区域进行配置和操作而不会负面地影响图像质量。举例来说,此遮蔽允许图7E中的总线结构44,其提供使调制器的光学性质与调制器的机电性质分离的能力,例如,寻址或由所述寻址引起的移动。这种可分离的调制器结构允许选择用于调制器的机电方面和光学方面的结构设计和材料且使其彼此独立而发挥作用。此外,图7C-7E中所示的实施例具有源自反射层14的光学性质与其机械性质脱离的额外益处,所述益处由可变形层34实现。这允许用于反射层14的结构设计和材料在光学性质方面得以优化,且用于可变形层34的结构设计和材料在所需的机械性质方面得以优化。
图7F说明从干涉式调制器的阵列后方得到的视图。展示以栅格布置的较大阵列的四个完整的像素。可看出,可变形或机械层34(其也可充当如图7A的简单实施例中的可移动反射体14)已经图案化以形成列电极71。位于气隙以下的传导层(见图1的光学堆叠16)已经图案化以形成在图7F中由轨道支撑件73分离的行电极72,其准许激活可变形层的特定部分。间隙74使列电极71的条带分离。支柱或支撑结构75可形成在特定像素内以加固机械层。另外,在整个阵列上穿过机械层34形成蚀刻孔76。在激活可变形反射层从而致使列电极71的部分朝行电极72移动后,阵列的被激活部分可在整个阵列上呈现为黑暗的。然而,将了解,可使用不同配置,使得所述阵列可在未激活位置中反射第一颜色与在激活位置中反射第二颜色之间切换,且如果利用不同尺寸或材料,则被激活位置无需引起黑暗状态。轨道支撑件73和间隙74形成有效像素77之间的无效区域。有效像素77内的区也可视为“无效区域”,例如支撑结构75,且如果不存在独立的悬置反射体14,那么蚀刻孔76。实际上,直接围绕每一支撑结构75并直接邻近于轨道支撑件73的区也可视为“无效的”,因为镜层在这些区域中不能完全崩塌,且需要掩蔽围绕支撑结构的***区以使得其在激活状态与未激活状态之间不同地表现。如下文将进一步论述,光从无效或无效区域的发射、反射或透射可降低观看者对图像的感知。
本文揭示的某些实施例包含与显示器集成的光伏(PV)电池或装置,所述显示器包括MEMS、LCD、LED或其它显示器技术。此类显示器可有效地显示图像或信息,同时收集环境和/或显示器产生的光以转化为电。因此,有效(可编程)户外显示器可有利地将未使用的太阳光转化为电,或移动装置上的显示器可有助于通过收集环境光来弥补备用功率使用。此外,可使用与显示器集成的PV材料对光的吸收来掩蔽可使图像降级的非所要的或体外光,如下文进一步阐释。因此,将PV材料与显示器集成的制造成本可通过省略用于在显示图像区域的无效区中形成掩模的单独步骤而至少部分得以弥补。
在一些实施例中,经图案化PV电池可上覆于显示器图像区上。PV有效材料包含于有效图像区或显示器装置的阵列区域内以俘获未使用的环境或显示器产生的光并将其转化为电。依据有效显示器技术,显示器阵列区的多达30%或更多的表面积可实际上由对所显示的像素化图像或信息没有影响的无效区或区域组成。这意味着入射在显示器的有效图像区上的环境光的多达30%或更多“被浪费”,且因此可被PV材料俘获以有用地转化为电。这可通过将经图案化PV材料放置在显示器后方来实现,从而允许入射在显示器上的环境光照射或透射穿过显示器的无效区并到达下方的经图案化PV材料上。
或者,经图案化PV材料可形成在无效区域前方,落在显示器的无效区域上的原本被浪费的光可接着被经图案化PV材料掩蔽。这些区域中的光可实际上使显示器装置的图像降级。因此,形成黑色掩模来掩蔽这些无效区以防止朝观看者的非所要的发射或反射是有利的。优选的是,黑色掩模可包括用以形成PV黑色掩模的光伏材料,使得非所要的光不仅被吸收以维持所需对比度,而且有利地转化为有用的电。
图8示意性地展示光伏(PV)电池80的实例。典型光伏电池可将光能转换成电能或电流。PV电池80是具有较小碳占用区域(carbon footprint)且对环境具有较少影响的可再生能源的实例。使用PV电池可减小能量产生的成本。PV电池可具有许多不同大小和形状,例如,从小于邮票到若干英寸宽。PV模块可包含电连接、安装硬件、功率调节设备,和储存太阳能以用于在没有太阳时使用的电池。
典型PV电池80包括安置于两个电极82、83之间的PV材料81。在一些实施例中,PV电池80包括上面形成层的堆叠的衬底。PV电池80的PV材料81可包括例如硅等半导体材料。在一些实施例中,有效区可包括通过使如图8中所展示的n-型半导体材料81a与p-型半导体材料81b接触而形成的p-n结。此种p-n结可具有类似二极管的性质且因此也可称作光电二极管结构。
PV材料81通常夹在提供电流路径的两个电极之间。电极82、83可由铝、银、钼或某一其它传导材料形成。电极82、83也可由透明传导材料形成或包含透明传导材料。电极82、83可经设计以覆盖p-n结的前表面的大部分以便降低接触电阻且增加收集效率。在电极82、83由不透明材料形成的实施例中,电极82、83可经配置以在PV材料正面上留下开口以允许照明照射在PV材料上。在一些实施例中,背面或正面电极82、83可包含透明导体,例如,例如氧化锡(SnO2)或氧化铟锡(ITO)等透明传导氧化物(TCO)。TCO可提供电接触和传导率且同时对于传入的光为透明的。所说明的PV电池80还包括设置于正面电极83上的抗反射(AR)涂层84,但在其中光可预期入射在PV电池80的背面上或透射穿过所述背面(如在下文进一步论述的图12和13中的正面和背面PV黑色掩模110、115中)的实施例中,AR涂层也可任选地设置于背面电极82上。AR涂层84可减小从PV有效材料81的前表面反射的光的量。
当照射PV材料81时,光子将能量转移到有效区中的电子。如果由光子转移的能量大于半导体材料的带隙,那么电子可具有足以进入传导带中的能量。在形成p-n结的情况下产生内部电场。内部电场对受激励电子起作用以致使这些电子移动,借此在外部电路85中产生电流。所得电流可用于给各种电装置供电。举例来说,所得电流可通过对如图8中所展示的电池86或电容器充电而经存储以供稍后使用,所述电池86或电容器又可给显示器供电。
PV材料可包含多种光吸收光伏材料的任一者,例如晶体硅(c-硅)、非晶硅(α-硅)、锗(Ge)、Ge合金、碲化镉(CdTe)、二硒化铜铟(CIS)、二硒化铜铟镓(CIGS)、光吸收染料和聚合物、散布有光吸收纳米粒子的聚合物,或串联的多结光伏材料和膜。PV有效材料81可包括其它适当的材料,包含III-V半导体材料,包含例如砷化镓(GaAs)、氮化铟(InN)、氮化镓(GaN)、砷化硼(BAs)等此类材料。也可使用如氮化铟镓等半导体合金。其它光伏材料和装置也是可能的。形成这些材料的方法是所属领域的技术人员已知的。作为说明性实例,可通过基于真空的工艺形成如CIGS等合金,其中将铜、镓和铟共同蒸镀(co-evaporated)或共同溅镀(co-sputtered),接着以硒化物蒸气退火以形成CIGS结构。非基于真空的替代工艺也是所属领域的技术人员已知的。所沉积的薄膜PV有效材料可包括(例如)非晶硅薄膜,其最近已获得普及。可尤其通过物理气相沉积(PVD)、化学气相沉积(CVD)、电化学气相沉积或等离子体增强型化学气相沉积(PECVD)技术将作为薄膜的非晶硅沉积于较大区域上。如所属领域的技术人员已知,包括非晶硅层的PV有效材料可包含具有n掺杂和/或p掺杂硅的一个或一个以上结,且可进一步包括p-i-n结。也可使用其它材料。其中光子被吸收且将能量转移到电载流子(空穴和电子)的光吸收材料在本文中称为PV电池的PV材料或材料,且此术语意图涵盖多个有效子层。用于PV材料的材料可依据PV电池的所需性能和应用来选择。
图9A是示意说明典型薄膜PV电池90B的框图。典型薄膜PV电池90B包含光可通过的玻璃衬底91。设置于玻璃衬底91上的是第一电极层83、PV材料81(展示为包括非晶硅)和第二电极层82。第一电极层83可包含例如ITO等透明传导材料或由透明传导材料形成。如所说明,第一电极层83与第二电极层82之间夹入薄膜PV材料81。所说明的PV材料81包括非晶硅层,但还已知有其它PV薄膜材料。如此项技术中已知,充当PV材料的非晶硅可包括一个或一个以上二极管结。此外,非晶硅PV层可包括p-i-n结,其中本征硅层81c夹在p掺杂层81b与n掺杂层81a之间。p-i-n结可具有比p-n结高的效率。在一些其它实施例中,PV电池可包括多个结。
可使用例如物理气相沉积技术、化学气相沉积技术、电化学气相沉积技术等沉积技术来沉积层81、82、83。薄膜PV电池可包括例如薄膜硅、CIS、CdTe或CIGS等非晶或多晶材料。薄膜PV电池的一些优点尤其是小装置占用区域和制造工艺的可缩放性。
图9B描绘干涉式增强型PV堆叠或电池90B的实例。干涉式增强型PV电池90B包含PV有效材料或层81。PV材料81可包括形成在衬底91上的薄膜光伏材料。设置于PV材料81下方的光学谐振腔93和反射体94经配置而以干涉的方式增强PV材料81中的电场的强度,从而产生效率得到改进的以干涉的方式增强的PV电池90B。覆盖PV材料81的电极92可为金属的且足够厚以在一些区域中为不透明的以促进将电子和/或空穴传导出PV材料81。否则,也可用包括透明传导氧化物(TCO)层或TCO层与不透明电极两者的电极92覆盖PV材料81。类似地,光学谐振腔93可包括充当光学谐振腔93的一部分且还充当用于空穴和/或电子传导出PV材料81的传导层的TCO层。PV材料81可包括薄膜光伏材料,例如非晶硅、CIGS或其它半导体薄膜光伏材料。反射体94和光学谐振腔93的光学性质(尺寸和材料性质)经选择以使得来自分层PV装置90B的界面的反射相干求和以在PV电池90B的PV材料81中产生适宜的波长分布和相位的增加的场,在PV电池90B的PV材料81中光能被转化为电能。此以干涉的方式增强的光伏装置增加干涉式光伏电池的有效区中的光能的吸收且借此增加装置的效率。在此实施例的变化中,可采用多个光学谐振腔来单独地调谐光的不同波长并使PV材料中的吸收最大化。埋入式光学谐振腔和/或层可包括透明传导或电介质材料、空气间隙或其组合。
假定可通过将PV电池与显示器集成来获得某些优点,下文的实施例描述将光伏电池与显示器装置合并或集成。光伏电池可经布置以便俘获入射在显示器上、从显示器反射或由显示器产生的光,并将其转化为电。此外,如下文进一步阐释,许多显示器可易受在像素之间的区域中朝观看者发射或反射的光的影响。此非所要的光可降低显示器的图像质量和/或对比度,并使显示器所产生的图像降级。因此,显示器可包含黑色掩模来掩蔽此非所要的或体外光以阻止其到达观看者。由于PV材料可吸收此体外光,所以PV材料可用作用于发射、反射或透射性显示器的黑色掩模。不仅PV黑色掩模吸收所述非所要的光,而且PV黑色掩模可有利地将所吸收的光转化为电,因此起到双重功能且不需要额外的黑色掩模构造。
图10描绘朝装置的前侧或图像侧显示图像的显示器装置100的一般示意图。如图所示,显示器装置100包括包含有效像素101的阵列区。有效像素101也可称为有效像素区域。显示器装置100还包含无效区域。如所说明,无效区域栅格线102、103设置在邻近的有效像素101之间或分离邻近的有效像素101。在显示器装置100是干涉式调制器显示器的实施例中,无效区域可包括电极之间的间隙、像素阵列的边缘处的***区、轨道、支撑结构或蚀刻孔,如上文参看图7F所论述。在包括其它显示器技术的其它实施例中,无效区域可包括显示器中易受发射或反射的体外光影响的其它区域。
同样在图10中展示的是表示朝观看者发射、反射或透射的体外光的射线104和105。通常,此类光104、105为白光,但朝观看者引导的体外光可以是任何颜色的。此类体外光可通过洗掉或降低既定为明亮的(在开或关状态中)像素区域的对比度而使显示器装置100上显示的图像降级。在一些实施例中,显示器装置100可包含黑色掩模材料以掩蔽体外光104、105,使得仅来自有效像素101的光106到达观看者,且非常少的体外光104、105朝观看者引导。
图11示意性地描绘与图10的显示器装置类似的一般、有效(可编程)显示器装置的横截面。如图11所示,从显示器朝观看者发射、反射或透射的光可包括从有效像素101发射、反射或透射以形成图像的一部分的光106。朝观看者发射、反射或透射的光还可包括从无效区域103发射、反射或透射的光105a-d。来自无效区域的光105a-d可洗掉或降低朝观看者显示的图像中的对比度。因此需要掩蔽这些区域以阻挡或吸收体外光105a-d。
光105a-d可来自许多来源。举例来说,无效区域103可为反射或半反射的。因此,射线105a可源自无效区域103上入射的环境光107a的反射。在无效区域103为透明或半透明的情况下,光105a可从设置于像素101后方的反射表面或背板108反射。在一些情况下,入射的环境光107b可通过像素101并反射离开背板108且接着通过无效区域103,如射线105b所描绘。在发射性显示器中,体外光105c可由像素101发射,例如在LED显示器中。在其它显示器中,光可从背光透射穿过无效区域103,如射线105d所示。在所有这些实施例中,体外光105a-d可降低对比度或洗掉图像。由光吸收材料制成的黑色掩模可用于吸收此光,从而允许仅像素光106到达观看者。有利的是,黑色掩模可由PV材料制成,使得此体外光不仅被吸收,而且有利地用于产生电以供存储,用于帮助向显示器装置100供电,或用于其它用途。
图12描绘PV集成式显示器装置120中的无效区域103前方经图案化的前PV黑色掩模110。如图所示,前PV黑色掩模110有助于掩蔽无效区域103以吸收原本将使显示器装置120上显示的图像降级的体外光。举例来说,前PV黑色掩模110可在入射的环境光107a可反射之前吸收所述入射的环境光107a。前PV黑色掩模110还可有助于吸收反射离开背板108或设置在像素101后方的其它反射性表面的光105b。如相对于光线107a和105b所示,PV黑色掩模110可经配置以接收来自光伏材料的前侧和后侧两者的光。前PV黑色掩模110可进一步吸收从像素101发射(例如,发射性像素,如LED显示器中)或透射穿过(例如,如其中光105d由背光产生的LCD显示器中)像素101且偏离或散射离开无效区域103的光105c、105d。因此,如可从图12看出,仅有效区域101发射的光106到达观看者,且图像因此增强。
图13描绘与图12的PV集成式显示器装置类似的PV集成式显示器装置130。然而,在图13中,后PV黑色掩模115在无效区域103后方经图案化。如图所示,后PV黑色掩模115可在入射的环境光107a可反射之前吸收所述入射的环境光107a。后PV黑色掩模115还可有助于吸收反射离开背板108或设置在像素101后方的其它反射性表面的光105b。因此,如相对于光线107a和105b所示,后PV黑色掩模115可经配置以接收来自光伏材料的前侧和后侧两者的光。后PV黑色掩模115可进一步吸收由像素101产生但偏离或散射到无效区域103的光105d。因此,如可从图13看出,仅有效区域发射的光106到达观看者,且图像因此增强。在一些实施例中,PV集成式显示器装置可包括前和后PV黑色掩模110、115两者。
图12和13中描绘的前或后PV黑色掩模110、115可包括包含如上文论述的光伏材料的光伏电池。光伏电池可包含以干涉的方式增强的光伏电池。适当的光伏材料可优选包含如上文描述(见图8-9B)的薄膜光伏材料,但也可使用半导体衬底或外延生长的半导体材料。此外,如上文所阐释,PV电池中的光伏材料(例如,PV黑色掩模110、115)可与电极接触。光伏材料可“夹在”电极之间。与光伏材料接触的电极可包括一侧(例如,与观看者相对)上的不透明的电极、以窗口图案化以允许光接近任一侧或两侧上的PV材料的不透明电极,和/或除此类不透明电极外或代替于此类不透明电极的例如透明传导氧化物等透明传导材料或膜。
如图12和13所示,PV黑色掩模110、115经图案化以暴露有效像素101。举例来说,在一些实施例中,显示器是反射性显示器,且PV黑色掩模110形成在像素前方(在其图像侧上)。在此实施例中,PV黑色掩模110经图案化以将像素101暴露于入射的环境光或前光,所述光选择性地反射到观看者以产生图像。在其它实施例中,显示器是透射性的且PV黑色掩模115形成在像素后方。在此实施例中,PV黑色掩模115经图案化以将像素101暴露于来自像素后方的光,例如背光。为了通过阻挡或吸收体外光而适当地改进图像,PV黑色掩模110、115优选经配置以反射或透射入射在PV黑色掩模110、115上的光的不到10%。更优选的是,PV黑色掩模110、115经配置以反射或透射入射在PV黑色掩模110、115上的可见光的不到5%。包括PV黑色掩模110、115的PV电池的反射或透射可取决于例如PV电池中的光伏材料的厚度以及所使用的材料等因素。PV黑色掩模还可包含抗反射涂层以进一步减少反射。
在图12和13中,PV黑色掩模110、115经图案化以掩蔽阵列或图像区的无效区域103。因此,PV黑色掩模经图案化以对应于无效区域103的图案,使得为观看者掩蔽无效区域的不合意的光学效应(例如,反射)。
图14展示PV集成的2×2干涉式调制器阵列140的实施例的透视图。如上文关于图7F所论述,干涉式调制器阵列140可包含无效区域,例如机械层34的列与轨道支撑件73之间的间隙74。无效区域还可包含形成在有效像素101内的蚀刻孔76或支柱75。在图14的实施例中,经图案化的后PV黑色掩模115形成在阵列140后方。阵列140或图像区中的无效区域可包括能够允许环境光107b到达经图案化的后PV黑色掩模115的透明无效结构。如图所示,经图案化的后PV黑色掩模115经图案化以对应于光可通过的无效结构的图案。举例来说,PV黑色掩模115在间隙74和轨道73下方形成为条带以在阵列140下方或后方形成类似十字形的图案。对于较大阵列,所述图案具有对应于有效像素区101之间的空间的栅格的形状。后PV黑色掩模115可形成在背板145上,如图所示。另外,后PV黑色掩模115可包含PV材料的“岛”或未连接部分(PV黑色掩模岛146)。
有利的是,形成在阵列140后方的类似十字形的图案可延伸到显示器140的***以允许后PV黑色掩模115的前和后电极与外部电路的电连接。对于包含如PV黑色掩模岛146的岛的PV黑色掩模110、115的实施例,可经由与PV黑色掩模岛146的PV材料81电接触的毯覆TCO层而形成与外部电路的电连接(见图17A、17B和附带的描述)。在其它实施例中,可使用通路、经图案化金属迹线或经图案化TCO膜来形成与外部电路的电连接。在具有经图案化金属迹线的实施例中,金属迹线将保持较小以便不减少入射在PV黑色掩模岛146中的PV材料81上的光的量,或所述迹线可借助通路路由到背板145的后侧。
光在像素101周围或之间通过、穿过间隙74以及穿过支撑结构18或73(如以光线107a)的实例演示利用通过图像区或像素阵列内的无效区域的光。可选择材料以使穿过此类无效区域的透射最大化。示范性透明材料可包括例如二氧化硅(SiO2)、二氧化钛(TiO2)、氟化镁(MgF2)、氧化铬(III)(Cr3O2)、氮化硅(Si3N4)等电介质。然而,任何透明或部分透明材料可用于无效区域中的结构。
如图14中所说明,PV有效材料81可夹在可用作电极的两个传导材料层143、144之间。前电极144可包含例如ITO或其它TCO等透明导体或由透明导体制成。将理解,PV有效材料81可经配置以仅与一个透明传导材料层电接触,且后PV黑色掩模115的后电极143可为不透明的。
透明传导层可包括任何透明传导材料。许多透明传导材料是透明传导氧化物(TCO)。TCO层通常与光伏材料(尤其是薄膜光伏材料)一起使用,以便改进电极到PV材料的接触,而不阻挡光。功能上,TCO可在电学上形成PV电池电极的一部分,所述PV电池电极通常包括与TCO材料电接触的不透明金属或传导电极。在显示器应用中,不透明电极可经图案化以形成其中PV材料可俘获显著光的窗口。或者,电极可完全与图像显示区外部的透明传导材料接触,且仅TCO用于阵列或图像区内的电极。如所属领域的技术人员已知,常见的TCO是氧化铟锡(ITO)。形成或沉积ITO的方法在此项技术中是众所周知的且包含电子束蒸镀、物理气相沉积或溅镀沉积技术。也可使用其它TCO材料和制造工艺。虽然所说明的后PV黑色掩模115仅需要具有用于其前电极144的透明导体,但将理解,对于前PV掩模110(见图12),采用透明导体用于PV材料81的两侧上的电极可能是有用的。
图15A和15B说明大体上类似于图7A-7E中说明的实施例的MEMS装置的两个实施例。然而,图15A和15B的实施例包括在有效像素101前方(在其图像或观看者侧上)的前PV黑色掩模110。如观看者的位置所说明,图15A和15B相对于图10-14颠倒。
在图15A中,透明材料的缓冲层65形成在前PV黑色掩模110上以为干涉式调制器的形成提供平坦化表面。支撑件18与前PV黑色掩模110的横截面区域对准且约与所述横截面区域为相同大小。在其它实施例中,PV黑色掩模110的横截面区域不一定等于支撑件18的面积,而是大小和图案均对应于支撑件18的横截面区域和图案以便充分掩蔽此无效区域并吸收入射的环境光107a使其不反射离开干涉式调制器中的任何表面。前PV黑色掩模110可在表面积方面超过支撑件例如<10%或<5%。
如图15A中所说明,前PV黑色掩模110内嵌在衬底20上的缓冲层65中。光调制元件或IMOD(包括光学堆叠16、可移动层14,和使光学堆叠16与可移动层14分离的腔19)位于缓冲层65上。因为缓冲层65的一部分在前PV黑色掩模110上,所以前PV黑色掩模110也与支撑件18电绝缘且不提供到光调制元件的电路径或连接。
或者,如图15B所示,前PV黑色掩模110可形成在衬底20的与干涉式调制器相对的一侧上。在此实施例中,PV黑色掩模可内嵌在类似的缓冲层65中或以其它方式包封,但在衬底20的相对侧上。为了制造图15B的实施例,显示器可首先形成在衬底20的一侧上。PV黑色掩模110可接着形成在衬底的另一侧上,如下文进一步论述。或者,PV黑色掩模110可首先形成在一侧上,且显示器可接着形成在相对侧上。
可以不同方式制造本文揭示的各种实施例。举例来说,包括图像区中的有效像素的阵列的显示器可通过将经图案化PV黑色掩模和显示器的一者层压到另一者之上而与PV黑色掩模110、115集成。或者,对于设置在显示器后方的PV黑色掩模,可形成PV黑色掩模并依据应用将其图案化在可为金属或透明的背板上。可接着对准背板并将其附接到显示器以形成显示器装置的后表面。在PV黑色掩模设置在显示器前方的其它实施例中,PV黑色掩模可形成在例如玻璃或塑料等透明盖板上。盖板可接着附接或层压到显示器上,或显示器可接着形成或沉积在盖板的一侧或另一侧上。虽然由PV黑色掩模110、115形成的图案不必与由无效区域形成的图案相同,但经图案化PV黑色掩模优选覆盖无效区域的图案并与无效区域的图案对准,使得PV黑色掩模可吸收可掩蔽无效区域中可用的大部分非所要的光。
图16、17A和17B描绘制造如上文描述的前和后PV黑色掩模110、115的PV黑色掩模的实施例中的步骤。如图16所示,所述工艺可开始于将电极层82上的薄膜PV材料层81毯覆沉积到适宜的衬底161上。衬底161可对应于图15A和15B中的衬底20的一侧或另一侧。在其中PV黑色掩模115形成在有效像素后方的实施例中,衬底161可包含显示器本身,使得PV黑色掩模115形成在显示器的后侧上。或者,与图14的实施例一样,衬底161可包含稍后将与显示器组装并设置在显示器后方的背板。在其它实施例中,衬底161可包括牺牲衬底。牺牲衬底可接着被层压在显示器装置的前或后侧上并被移除以留下经图案化PV黑色掩模。优选的是,所述层压经进行以使得PV黑色掩模110、115的图案与像素阵列中的无效区域的图案对准。
如技术人员将了解,阵列上的连续黑色掩模图案(例如,像素之间的栅格图案)可被容易地路由到用于将电荷存储在电池中或直接向电装置(例如,显示器本身或相关联的电子元件(如手机))供电的电路。用以掩蔽隔离的柱的隔离型PV材料(例如,岛)可需要特殊路由。图17A和17B说明一种对由PV材料产生的电流进行路由的方法。或者,对于此类岛,技术人员将了解,迹线可借助通路被路由到背板145的后侧。
图17A展示在图16的毯覆PV材料层81的图案化以及电介质缓冲层171和第二电极83的进一步沉积之后的装置。电介质缓冲层171可有助于将PV材料81的隔离岛之间的区中的两个电极82、83电隔离。电极82、83可包括透明传导层,或可包括不透明金属电极或两者。如果电极82、83包括反射性或不透明金属电极,那么优选小心地将电极82、83的金属部分图案化以便使反射最小化并使到PV材料81的窗口最大化。
图17B与上文的图17A一样展示在图16的毯覆PV材料层81的图案化之后的装置。然而,在图17B的实施例中,不通过缓冲器(如图17B中)而是通过PV材料81的薄化部分来防止电极82、83电接触。因此,虽然图17A将PV材料81图案化以便从一些区域(例如,有效像素区域)移除所有PV材料81,但图17B的实施例将PV材料81图案化以便在一些区域中使PV材料81显著薄化,从而留下在既定充当PV黑色掩模110、115区域的区域中相对厚的PV材料81。
一般来说,PV黑色掩模110、115可包括薄膜光伏材料,如上文所描述。薄膜PV电池的一些优点是较小的装置占用区域和制造工艺的可缩放性。在一些实施例(例如,图17B的实施例)中,薄膜PV电池可经设计以部分透射。在此类实施例中,其中需要PV黑色掩模110、115的无效区域外部的有效像素区域173中的PV材料81的透射率足够高以使显示器图像保持良好。
另外,干涉式调制器像素的部分可经配置或设计为部分透射的,且因此有效像素可经设计以能够允许相当多的环境光通过并到达PV电池115及其PV有效材料81。一般来说,反射体14可(例如)包括金属层,例如铝(Al)、钼(Mo)、锆(Zr)、钨(W)、铁(Fe)、金(Au)、银(Ag)和铬(Cr)或以上的合金(例如,MoCr)。反射体14通常足够厚以成为不透明的(例如,300nm或更厚)。然而,在其它实施例中,反射体14是用于“透射反射”IMOD显示器的部分反射体。在某些实施例中,反射体14的透射性取决于反射体14的厚度。一般来说,作为部分反射体的金属反射体14将在20与300之间,优选小于225通过在PV集成式显示器100的各种实施例中在反射体14中使用薄半反射层,干涉式调制器可经配置以允许约5%到约50%通过显示器像素的有效阵列的选定部分以到达光伏材料。在此类布置中,经图案化PV黑色掩模可下伏于此类透射反射区以俘获从其中通过的光。
虽然以上详细描述揭示本发明的若干实施例,但应理解,本揭示内容仅是说明性的且不限制本发明。应了解,所揭示的特定配置和操作可与上文描述的配置和操作不同,且可在与半导体装置的制造不同的情境中使用本文描述的方法。技术人员将了解,相对于一个实施例而描述的某些特征也可应用于其它实施例。举例来说,已相对于光伏电池、装置或阵列的前侧论述干涉式堆叠的各种特征,且此类特征容易应用于形成在光伏电池、装置或阵列的后侧上的干涉式堆叠。举例来说,已相对于形成在PV装置的前侧上的干涉式调制器的各种实施例论述各种反射体特征。此类反射体特征也可应用于形成在PV装置的后侧上的干涉式调制器,包含在干涉式调制器的一些实施例中部分反射体的使用,或当将后电极用作反射体时反射器的省略。
Claims (24)
1.一种显示器装置,其朝向前侧显示图像,其中后侧与所述前侧相对,所述显示器装置包括:
阵列区,所述阵列区包括有效像素区域和无效区域,其中所述有效像素区域包括反射性微机电***(MEMS)装置;以及
光伏电池,其包括光伏材料,其中所述光伏材料形成在所述阵列区的所述前侧和所述后侧的一者上,且其中所述光伏材料经图案化以对应于所述无效区域的图案,所述无效区域包含在所述有效像素区域内形成的隔离的无效区域。
2.根据权利要求1所述的装置,其中所述光伏材料经图案化以暴露所述有效像素区域并与所述无效区域的至少一些对准。
3.根据权利要求2所述的装置,其中所述无效区域包含使邻近的有效像素区域分离的区域。
4.根据权利要求1所述的装置,其中所述光伏材料包括经沉积的薄膜光伏材料。
5.根据权利要求1所述的装置,其中所述光伏材料进一步充当黑色掩模以减少所述阵列区的所述无效区域中的反射。
6.根据权利要求5所述的装置,其中所述光伏材料经配置以反射或透射入射在所述光伏材料上的可见光的不到10%。
7.根据权利要求6所述的装置,其中所述光伏材料能够从所述光伏材料的所述前侧和后侧两者接收光。
8.根据权利要求7所述的装置,其进一步包括与所述光伏材料电接触的透明传导膜。
9.根据权利要求1所述的装置,其中所述光伏材料形成在所述阵列区的所述后侧上。
10.根据权利要求9所述的装置,其中在所述隔离的无效区域之间,前侧电极通过电介质缓冲层和所述光伏材料的薄化部分中的一者与后侧电极分离。
11.根据权利要求1所述的装置,其中所述MEMS装置包括干涉式调制器。
12.根据权利要求10所述的装置,其中所述无效区域包括能够允许环境光到达所述光伏材料的透明无效结构,且其中所述光伏材料经图案化以对应于所述无效结构的图案。
13.根据权利要求12所述的装置,其中所述透明无效结构包括像素区域之间的空间。
14.根据权利要求1所述的装置,其中所述光伏材料形成在所述阵列区的所述前侧上。
15.根据权利要求14所述的装置,其中所述光伏材料经图案化以掩蔽所述阵列区的所述无效区域。
16.根据权利要求15所述的装置,其中所述MEMS装置包括干涉式调制器。
17.根据权利要求15所述的装置,其进一步包括与所述光伏材料电接触的透明传导膜。
18.根据权利要求17所述的装置,其中所述光伏材料能够接收从所述光伏电池的前部和后部穿过所述透明传导膜入射在所述光伏材料上的光。
19.根据权利要求10所述的装置,其中所述光伏材料形成光伏材料的岛。
20.根据权利要求11所述的装置,其中所述无效区域包括蚀刻孔或支柱中的一者。
21.根据权利要求11所述的装置,其中所述光伏材料形成光伏材料的岛。
22.一种制造显示器装置的方法,所述显示器装置经配置以朝向前侧显示图像,其中后侧与所述前侧相对,所述方法包括:
提供包括阵列区的显示器,所述阵列区包括有效像素区域和无效区域,其中所述有效像素区域包括反射性微机电***(MEMS)装置;以及
将经图案化的光伏材料设置于所述阵列区的所述前侧和所述后侧的一者上,其中将所述光伏材料图案化以对应于所述无效区域的图案,所述无效区域包含在所述有效像素区域内形成的隔离的无效区域。
23.根据权利要求22所述的方法,其进一步包括使所述经图案化光伏材料与所述无效区域的所述图案对准。
24.一种显示器装置,其朝向前侧显示图像,其中后侧与所述前侧相对,所述显示器装置包括:
阵列区,所述阵列区包括有效像素区域和无效区域,其中所述有效像素区域包括反射性微机电***(MEMS)装置;以及
光伏电池,其包括光伏材料,其中所述光伏材料形成在所述阵列区的所述后侧上,且其中所述光伏材料经图案化以对应于所述无效区域的图案。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US99956607P | 2007-10-19 | 2007-10-19 | |
US60/999,566 | 2007-10-19 | ||
PCT/US2008/080225 WO2009052326A2 (en) | 2007-10-19 | 2008-10-16 | Display with integrated photovoltaics |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101828145A CN101828145A (zh) | 2010-09-08 |
CN101828145B true CN101828145B (zh) | 2012-03-21 |
Family
ID=40562232
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801122193A Expired - Fee Related CN101828145B (zh) | 2007-10-19 | 2008-10-16 | 具有集成光伏元件的显示器 |
CN2008801122206A Expired - Fee Related CN101828146B (zh) | 2007-10-19 | 2008-10-16 | 具有集成光伏装置的显示器 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008801122206A Expired - Fee Related CN101828146B (zh) | 2007-10-19 | 2008-10-16 | 具有集成光伏装置的显示器 |
Country Status (6)
Country | Link |
---|---|
US (4) | US8130440B2 (zh) |
EP (2) | EP2210280A2 (zh) |
JP (2) | JP5302322B2 (zh) |
KR (2) | KR20100090262A (zh) |
CN (2) | CN101828145B (zh) |
WO (2) | WO2009052326A2 (zh) |
Families Citing this family (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6674562B1 (en) * | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US7907319B2 (en) * | 1995-11-06 | 2011-03-15 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with optical compensation |
KR100703140B1 (ko) | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | 간섭 변조기 및 그 제조 방법 |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
WO2003007049A1 (en) * | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
TWI289708B (en) | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
US7342705B2 (en) | 2004-02-03 | 2008-03-11 | Idc, Llc | Spatial light modulator with integrated optical compensation structure |
US7807488B2 (en) * | 2004-09-27 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Display element having filter material diffused in a substrate of the display element |
US7349141B2 (en) * | 2004-09-27 | 2008-03-25 | Idc, Llc | Method and post structures for interferometric modulation |
US7561323B2 (en) * | 2004-09-27 | 2009-07-14 | Idc, Llc | Optical films for directing light towards active areas of displays |
US7916980B2 (en) | 2006-01-13 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Interconnect structure for MEMS device |
KR101628340B1 (ko) | 2006-10-06 | 2016-06-08 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 디스플레이 장치 및 디스플레이의 형성 방법 |
US8872085B2 (en) | 2006-10-06 | 2014-10-28 | Qualcomm Mems Technologies, Inc. | Display device having front illuminator with turning features |
US7595926B2 (en) * | 2007-07-05 | 2009-09-29 | Qualcomm Mems Technologies, Inc. | Integrated IMODS and solar cells on a substrate |
EP2210280A2 (en) | 2007-10-19 | 2010-07-28 | QUALCOMM MEMS Technologies, Inc. | Display with integrated photovoltaic device |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US20090126792A1 (en) * | 2007-11-16 | 2009-05-21 | Qualcomm Incorporated | Thin film solar concentrator/collector |
US8068710B2 (en) | 2007-12-07 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | Decoupled holographic film and diffuser |
EP2232569A2 (en) | 2007-12-17 | 2010-09-29 | QUALCOMM MEMS Technologies, Inc. | Photovoltaics with interferometric back side masks |
KR20100114125A (ko) * | 2008-02-12 | 2010-10-22 | 퀄컴 엠이엠스 테크놀로지스, 인크. | 이중층 박막 홀로그래픽 태양광 집중장치/집광장치 |
US7944604B2 (en) | 2008-03-07 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Interferometric modulator in transmission mode |
US7898723B2 (en) | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
EP2279530B1 (en) * | 2008-04-11 | 2013-06-26 | QUALCOMM MEMS Technologies, Inc. | Method for improving pv aesthetics and efficiency |
US7791783B2 (en) * | 2008-06-25 | 2010-09-07 | Qualcomm Mems Technologies, Inc. | Backlight displays |
EP2340567A2 (en) * | 2008-09-18 | 2011-07-06 | QUALCOMM MEMS Technologies, Inc. | Increasing the angular range of light collection in solar collectors/concentrators |
CN201285767Y (zh) * | 2008-10-13 | 2009-08-05 | 杨锦怀 | 一种光电模块 |
TWI382551B (zh) * | 2008-11-06 | 2013-01-11 | Ind Tech Res Inst | 太陽能集光模組 |
US20100243057A1 (en) * | 2009-03-24 | 2010-09-30 | Rohm Co., Ltd. | Semiconductor device, photoelectric converter and method for manufacturing photoelectric converter |
US8294858B2 (en) | 2009-03-31 | 2012-10-23 | Intel Corporation | Integrated photovoltaic cell for display device |
EP2256814B1 (en) | 2009-05-29 | 2019-01-16 | Semiconductor Energy Laboratory Co, Ltd. | Oxide semiconductor device and method for manufacturing the same |
US8287386B2 (en) * | 2009-06-08 | 2012-10-16 | Cfph, Llc | Electrical transmission among interconnected gaming systems |
US8545327B2 (en) * | 2009-06-08 | 2013-10-01 | Cfph, Llc | Amusement device including means for processing electronic data in play of a game in which an outcome is dependant upon card values |
US8771078B2 (en) * | 2009-06-08 | 2014-07-08 | Cfph, Llc | Amusement device including means for processing electronic data in play of a game of chance |
US8545328B2 (en) * | 2009-06-08 | 2013-10-01 | Cfph, Llc | Portable electronic charge device for card devices |
US8419535B2 (en) * | 2009-06-08 | 2013-04-16 | Cfph, Llc | Mobile playing card devices |
US8784189B2 (en) | 2009-06-08 | 2014-07-22 | Cfph, Llc | Interprocess communication regarding movement of game devices |
US8613671B2 (en) * | 2009-06-08 | 2013-12-24 | Cfph, Llc | Data transfer and control among multiple computer devices in a gaming environment |
ES2363580T3 (es) * | 2009-06-10 | 2011-08-09 | Suinno Solar Oy | Célula solar de alta potencia. |
TWI395034B (zh) * | 2009-06-16 | 2013-05-01 | Au Optronics Corp | 薄膜電晶體陣列基板、顯示面板、液晶顯示裝置及其製作方法 |
KR102526493B1 (ko) | 2009-07-31 | 2023-04-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 디바이스 및 그 형성 방법 |
WO2011013523A1 (en) * | 2009-07-31 | 2011-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
DE202009017277U1 (de) * | 2009-12-19 | 2010-05-12 | Hannemann, Achim | Bildschirmeinheit mit integrierter Energieerzeugung |
WO2011117716A2 (en) * | 2010-03-22 | 2011-09-29 | Scannanotek Oy | Mems solar cell device and array |
US8194197B2 (en) | 2010-04-13 | 2012-06-05 | Sharp Kabushiki Kaisha | Integrated display and photovoltaic element |
EP2564247A2 (en) | 2010-04-27 | 2013-03-06 | The Regents Of The University Of Michigan | Display device having plasmonic color filters and photovoltaic capabilities |
US8120838B2 (en) | 2010-05-19 | 2012-02-21 | Au Optronics Corporation | Electrophoretic display device |
US8848294B2 (en) | 2010-05-20 | 2014-09-30 | Qualcomm Mems Technologies, Inc. | Method and structure capable of changing color saturation |
KR101128546B1 (ko) * | 2010-09-06 | 2012-03-27 | 삼성전기주식회사 | 태양전지 모듈 및 그 제조 방법, 그리고 상기 태양전지 모듈을 구비하는 모바일 장치 |
TWI418912B (zh) * | 2010-09-13 | 2013-12-11 | Wintek China Technology Ltd | 顯示裝置 |
TWI455081B (zh) * | 2010-12-20 | 2014-10-01 | Wistron Corp | 電子閱讀裝置及其操作方法 |
US9111326B1 (en) | 2010-12-21 | 2015-08-18 | Rawles Llc | Designation of zones of interest within an augmented reality environment |
US8845110B1 (en) * | 2010-12-23 | 2014-09-30 | Rawles Llc | Powered augmented reality projection accessory display device |
US9134593B1 (en) | 2010-12-23 | 2015-09-15 | Amazon Technologies, Inc. | Generation and modulation of non-visible structured light for augmented reality projection system |
US8845107B1 (en) | 2010-12-23 | 2014-09-30 | Rawles Llc | Characterization of a scene with structured light |
US8905551B1 (en) | 2010-12-23 | 2014-12-09 | Rawles Llc | Unpowered augmented reality projection accessory display device |
US9721386B1 (en) | 2010-12-27 | 2017-08-01 | Amazon Technologies, Inc. | Integrated augmented reality environment |
US9607315B1 (en) | 2010-12-30 | 2017-03-28 | Amazon Technologies, Inc. | Complementing operation of display devices in an augmented reality environment |
US9508194B1 (en) | 2010-12-30 | 2016-11-29 | Amazon Technologies, Inc. | Utilizing content output devices in an augmented reality environment |
WO2012104503A1 (fr) | 2011-01-31 | 2012-08-09 | Wysips | Dispositif d'affichage avec cellules photovoltaïques intégrées, à luminosité améliorée |
FR2971064B1 (fr) * | 2011-01-31 | 2015-12-18 | Wysips | Ecran d'affichage a barriere de parallaxe avec cellules photovoltaiques integrees et procede pour sa fabrication |
US8988440B2 (en) * | 2011-03-15 | 2015-03-24 | Qualcomm Mems Technologies, Inc. | Inactive dummy pixels |
US20120249519A1 (en) * | 2011-03-29 | 2012-10-04 | Qualcomm Mems Technologies, Inc. | Dummy pixels made inactive |
WO2012145677A2 (en) | 2011-04-20 | 2012-10-26 | The Regents Of The University Of Michigan | Spectrum filtering for visual displays and imaging having minimal angle dependence |
US9083000B2 (en) * | 2011-04-29 | 2015-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, and lighting device |
US20130063493A1 (en) * | 2011-09-14 | 2013-03-14 | Htc Corporation | Devices and Methods Involving Display Interaction Using Photovoltaic Arrays |
US9118782B1 (en) | 2011-09-19 | 2015-08-25 | Amazon Technologies, Inc. | Optical interference mitigation |
US20130100334A1 (en) * | 2011-10-20 | 2013-04-25 | Broadcom Corporation | Method and System for an Adaptive Auto-Focus Algorithm |
US8174772B1 (en) | 2011-10-26 | 2012-05-08 | Google Inc. | Display device with integrated photovoltaic layer |
US20130113810A1 (en) * | 2011-11-04 | 2013-05-09 | Qualcomm Mems Technologies, Inc. | Sidewall spacers along conductive lines |
US20130135184A1 (en) * | 2011-11-29 | 2013-05-30 | Qualcomm Mems Technologies, Inc. | Encapsulated arrays of electromechanical systems devices |
US9110281B2 (en) * | 2011-12-22 | 2015-08-18 | Qualcomm Mems Technologies, Inc. | Vertically etched facets for display devices |
KR101827496B1 (ko) | 2012-02-09 | 2018-02-09 | 한국전자통신연구원 | 듀얼 모드 동작 픽셀 및 이를 포함하는 듀얼 모드 동작 디스플레이 |
TWI483032B (zh) * | 2012-07-09 | 2015-05-01 | Acer Inc | 顯示裝置 |
CN103578388B (zh) * | 2012-07-25 | 2017-03-08 | 宏碁股份有限公司 | 显示装置及其高效充电方法 |
CN108470776B (zh) * | 2012-10-01 | 2022-07-29 | 无处不在能量公司 | 用于显示器或具有显示器的装置的波长选择性光电装置 |
US20140152632A1 (en) * | 2012-12-04 | 2014-06-05 | Apple Inc. | Solar Cell Ambient Light Sensors For Electronic Devices |
CN103137024B (zh) | 2013-02-04 | 2015-09-09 | 小米科技有限责任公司 | 一种显示装置及一种移动终端 |
US9547107B2 (en) | 2013-03-15 | 2017-01-17 | The Regents Of The University Of Michigan | Dye and pigment-free structural colors and angle-insensitive spectrum filters |
US9312517B2 (en) | 2013-03-15 | 2016-04-12 | Apple Inc. | Electronic device displays with border masking layers |
US10348239B2 (en) | 2013-05-02 | 2019-07-09 | 3M Innovative Properties Company | Multi-layered solar cell device |
TW201505199A (zh) * | 2013-05-08 | 2015-02-01 | Cima Nanotech Israel Ltd | 製造具有背側鈍化層之光伏打電池的方法 |
CN105264684B (zh) * | 2013-06-06 | 2018-01-16 | 3M创新有限公司 | 抗反射oled构造 |
FR3010831B1 (fr) | 2013-07-29 | 2019-06-28 | Sunpartner Technologies | Dispositif d'affichage retroeclaire avec cellules photovoltaiques integrees |
KR102073791B1 (ko) * | 2013-09-03 | 2020-02-05 | 삼성전자주식회사 | 가요성 전자 소자 및 그 제조 방법 |
KR102130331B1 (ko) * | 2013-09-24 | 2020-07-07 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법 |
US20150209654A1 (en) | 2013-11-12 | 2015-07-30 | Deq Systems Corp. | Reconfigurable playing cards and game display devices |
CN103760707A (zh) * | 2014-01-09 | 2014-04-30 | 北京京东方光电科技有限公司 | 一种阵列基板、液晶显示面板及显示装置 |
FR3017974B1 (fr) * | 2014-02-24 | 2017-07-21 | Sunpartner Technologies | Dispositif d'interconnexion et de gestion d'elements photovoltaiques |
FR3020473B1 (fr) | 2014-04-25 | 2018-01-12 | Sunpartner Technologies | Dispositif d'affichage a cellules photovoltaiques integrees avec luminosite et reflectivite ameliorees |
US20160098115A1 (en) * | 2014-10-03 | 2016-04-07 | Pixtronix, Inc. | Display with integrated photovoltaic cell |
US9887664B2 (en) * | 2015-03-04 | 2018-02-06 | David Lawrence Hammers | Solar panel module with increased volume of solar production |
EP3338363A1 (en) * | 2015-08-18 | 2018-06-27 | Saphire Solar Technologies ApS | All-in-one integrated multifunctional triple power module "itm" |
CA2995840C (en) * | 2015-08-19 | 2021-01-12 | E Ink Corporation | Displays intended for use in architectural applications |
GB2545490A (en) * | 2015-12-18 | 2017-06-21 | Dst Innovations Ltd | Display device and apparatus |
KR102461536B1 (ko) * | 2016-06-14 | 2022-11-01 | 삼성전자 주식회사 | 편광 특성을 갖는 태양 전지 및 이를 구비한 전자 장치 |
US10305421B1 (en) * | 2016-06-28 | 2019-05-28 | U.S. Department Of Energy | Adaptive light management in solar cells |
US10505078B2 (en) * | 2016-07-08 | 2019-12-10 | Effulgent Inc. | Methods and apparatus for illuminating gemstones |
CN107068787A (zh) * | 2016-12-28 | 2017-08-18 | 中国电子科技集团公司第十八研究所 | 太阳电池集成式GaAs结二极管的结构设计及制造方法 |
WO2019092827A1 (en) | 2017-11-09 | 2019-05-16 | International Frontier Technology Laboratory, Inc. | Semiconductor device power management system |
CN108196362B (zh) * | 2018-01-03 | 2020-06-12 | 京东方科技集团股份有限公司 | 像素结构、像素驱动方法、阵列基板、显示装置 |
EP3521912B1 (en) | 2018-01-31 | 2021-10-27 | IMEC vzw | An optical device for forming a distribution of a three-dimensional light field |
CN108461060A (zh) * | 2018-04-08 | 2018-08-28 | 北京小米移动软件有限公司 | 显示面板、光电检测方法、装置及计算机可读存储介质 |
WO2019200425A1 (en) * | 2018-04-16 | 2019-10-24 | Edith Cowan University | A display, a photovoltaic panel incorporating the display and method of making same |
US20200161486A1 (en) * | 2018-11-20 | 2020-05-21 | Kyocera Document Solutions Inc. | Method and apparatus for channeling light for stacked solar cell |
US11903232B2 (en) | 2019-03-07 | 2024-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device comprising charge-generation layer between light-emitting units |
US11456397B2 (en) | 2019-03-12 | 2022-09-27 | E Ink Corporation | Energy harvesting electro-optic displays |
CN110518079B (zh) * | 2019-09-29 | 2024-05-07 | 信利半导体有限公司 | 一种光电转换率高的薄膜光伏电池及其制备工艺 |
KR102439301B1 (ko) * | 2021-01-08 | 2022-08-31 | 군산대학교산학협력단 | 태양광 패널에 적용된 가시광 통신 시스템 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101006490A (zh) * | 2004-08-27 | 2007-07-25 | Idc公司 | 电流模式显示器驱动电路实现特征 |
JP4190323B2 (ja) * | 2003-03-24 | 2008-12-03 | 旭化成ホームズ株式会社 | 土間の気密構造及び土間の気密構造形成方法 |
Family Cites Families (432)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2534846A (en) | 1946-06-20 | 1950-12-19 | Emi Ltd | Color filter |
US2590906A (en) | 1946-11-22 | 1952-04-01 | Farrand Optical Co Inc | Reflection interference filter |
US2700919A (en) | 1951-04-26 | 1955-02-01 | Boone Philip | Decorative materials and devices having polarizing and birefringent layers |
US2677714A (en) * | 1951-09-21 | 1954-05-04 | Alois Vogt Dr | Optical-electrical conversion device comprising a light-permeable metal electrode |
US3247392A (en) * | 1961-05-17 | 1966-04-19 | Optical Coating Laboratory Inc | Optical coating and assembly used as a band pass interference filter reflecting in the ultraviolet and infrared |
US3728030A (en) | 1970-06-22 | 1973-04-17 | Cary Instruments | Polarization interferometer |
US3679313A (en) | 1970-10-23 | 1972-07-25 | Bell Telephone Labor Inc | Dispersive element for optical pulse compression |
JPS4946974A (zh) | 1972-09-11 | 1974-05-07 | ||
DE2336930A1 (de) | 1973-07-20 | 1975-02-06 | Battelle Institut E V | Infrarot-modulator (ii.) |
US3886310A (en) | 1973-08-22 | 1975-05-27 | Westinghouse Electric Corp | Electrostatically deflectable light valve with improved diffraction properties |
US4099854A (en) | 1976-10-12 | 1978-07-11 | The Unites States Of America As Represented By The Secretary Of The Navy | Optical notch filter utilizing electric dipole resonance absorption |
US4116718A (en) | 1978-03-09 | 1978-09-26 | Atlantic Richfield Company | Photovoltaic array including light diffuser |
US4357486A (en) * | 1978-03-16 | 1982-11-02 | Atlantic Richfield Company | Luminescent solar collector |
US4200472A (en) * | 1978-06-05 | 1980-04-29 | The Regents Of The University Of California | Solar power system and high efficiency photovoltaic cells used therein |
US4282862A (en) | 1979-11-09 | 1981-08-11 | Soleau Bertrand S | Thin-line collectors |
JPS5688111A (en) * | 1979-12-19 | 1981-07-17 | Citizen Watch Co Ltd | Liquid crystal display device with solar battery |
NL8001281A (nl) | 1980-03-04 | 1981-10-01 | Philips Nv | Weergeefinrichting. |
DE3109653A1 (de) * | 1980-03-31 | 1982-01-28 | Jenoptik Jena Gmbh, Ddr 6900 Jena | "resonanzabsorber" |
US4421381A (en) | 1980-04-04 | 1983-12-20 | Yokogawa Hokushin Electric Corp. | Mechanical vibrating element |
US4377324A (en) | 1980-08-04 | 1983-03-22 | Honeywell Inc. | Graded index Fabry-Perot optical filter device |
US4441791A (en) | 1980-09-02 | 1984-04-10 | Texas Instruments Incorporated | Deformable mirror light modulator |
US4400577A (en) | 1981-07-16 | 1983-08-23 | Spear Reginald G | Thin solar cells |
US4463336A (en) | 1981-12-28 | 1984-07-31 | United Technologies Corporation | Ultra-thin microelectronic pressure sensors |
NL8200354A (nl) | 1982-02-01 | 1983-09-01 | Philips Nv | Passieve weergeefinrichting. |
US4633031A (en) * | 1982-09-24 | 1986-12-30 | Todorof William J | Multi-layer thin film, flexible silicon alloy photovoltaic cell |
US4497974A (en) * | 1982-11-22 | 1985-02-05 | Exxon Research & Engineering Co. | Realization of a thin film solar cell with a detached reflector |
US4688068A (en) | 1983-07-08 | 1987-08-18 | The United States Of America As Represented By The Department Of Energy | Quantum well multijunction photovoltaic cell |
US4498953A (en) | 1983-07-27 | 1985-02-12 | At&T Bell Laboratories | Etching techniques |
JPS60147718A (ja) * | 1984-01-12 | 1985-08-03 | Seikosha Co Ltd | 太陽電池付きカラ−表示素子 |
US5096279A (en) | 1984-08-31 | 1992-03-17 | Texas Instruments Incorporated | Spatial light modulator and method |
US4560435A (en) | 1984-10-01 | 1985-12-24 | International Business Machines Corporation | Composite back-etch/lift-off stencil for proximity effect minimization |
US4655554A (en) | 1985-03-06 | 1987-04-07 | The United States Of America As Represented By The Secretary Of The Air Force | Spatial light modulator having a capacitively coupled photoconductor |
JPS62119502A (ja) | 1985-11-18 | 1987-05-30 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | スペクトル・フイルタ |
US4859060A (en) * | 1985-11-26 | 1989-08-22 | 501 Sharp Kabushiki Kaisha | Variable interferometric device and a process for the production of the same |
US4705361A (en) * | 1985-11-27 | 1987-11-10 | Texas Instruments Incorporated | Spatial light modulator |
US5835255A (en) * | 1986-04-23 | 1998-11-10 | Etalon, Inc. | Visible spectrum modulator arrays |
GB8621438D0 (en) | 1986-09-05 | 1986-10-15 | Secr Defence | Electro-optic device |
US4786128A (en) | 1986-12-02 | 1988-11-22 | Quantum Diagnostics, Ltd. | Device for modulating and reflecting electromagnetic radiation employing electro-optic layer having a variable index of refraction |
US4822993A (en) * | 1987-02-17 | 1989-04-18 | Optron Systems, Inc. | Low-cost, substantially cross-talk free high spatial resolution 2-D bistable light modulator |
EP0394219B1 (de) | 1987-06-04 | 1992-01-15 | LUKOSZ, Walter | Optisches modulations- und mess-verfahren |
US4956619A (en) | 1988-02-19 | 1990-09-11 | Texas Instruments Incorporated | Spatial light modulator |
US5028939A (en) | 1988-08-23 | 1991-07-02 | Texas Instruments Incorporated | Spatial light modulator system |
US4925259A (en) | 1988-10-20 | 1990-05-15 | The United States Of America As Represented By The United States Department Of Energy | Multilayer optical dielectric coating |
US4982184A (en) * | 1989-01-03 | 1991-01-01 | General Electric Company | Electrocrystallochromic display and element |
US4973131A (en) | 1989-02-03 | 1990-11-27 | Mcdonnell Douglas Corporation | Modulator mirror |
US5022745A (en) | 1989-09-07 | 1991-06-11 | Massachusetts Institute Of Technology | Electrostatically deformable single crystal dielectrically coated mirror |
US4954789A (en) | 1989-09-28 | 1990-09-04 | Texas Instruments Incorporated | Spatial light modulator |
US5083857A (en) | 1990-06-29 | 1992-01-28 | Texas Instruments Incorporated | Multi-level deformable mirror device |
US5062689A (en) | 1990-08-21 | 1991-11-05 | Koehler Dale R | Electrostatically actuatable light modulating device |
US5110370A (en) | 1990-09-20 | 1992-05-05 | United Solar Systems Corporation | Photovoltaic device with decreased gridline shading and method for its manufacture |
JPH04190323A (ja) * | 1990-11-26 | 1992-07-08 | Hitachi Ltd | 太陽電池セル付液晶ディスプレイ |
JPH04238321A (ja) * | 1991-01-23 | 1992-08-26 | Mitsubishi Electric Corp | 液晶表示器 |
US5287215A (en) | 1991-07-17 | 1994-02-15 | Optron Systems, Inc. | Membrane light modulation systems |
US5170283A (en) | 1991-07-24 | 1992-12-08 | Northrop Corporation | Silicon spatial light modulator |
US5240818A (en) | 1991-07-31 | 1993-08-31 | Texas Instruments Incorporated | Method for manufacturing a color filter for deformable mirror device |
US5315370A (en) | 1991-10-23 | 1994-05-24 | Bulow Jeffrey A | Interferometric modulator for optical signal processing |
US5356488A (en) * | 1991-12-27 | 1994-10-18 | Rudolf Hezel | Solar cell and method for its manufacture |
US6381022B1 (en) | 1992-01-22 | 2002-04-30 | Northeastern University | Light modulating device |
US5261970A (en) | 1992-04-08 | 1993-11-16 | Sverdrup Technology, Inc. | Optoelectronic and photovoltaic devices with low-reflectance surfaces |
JPH07508856A (ja) * | 1992-04-08 | 1995-09-28 | ジョージア テック リサーチ コーポレイション | 成長基板から薄膜材料をリフトオフするためのプロセス |
TW245772B (zh) | 1992-05-19 | 1995-04-21 | Akzo Nv | |
US5818095A (en) | 1992-08-11 | 1998-10-06 | Texas Instruments Incorporated | High-yield spatial light modulator with light blocking layer |
FI96450C (fi) | 1993-01-13 | 1996-06-25 | Vaisala Oy | Yksikanavainen kaasun pitoisuuden mittausmenetelmä ja -laitteisto |
US7830587B2 (en) | 1993-03-17 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with semiconductor substrate |
US6674562B1 (en) | 1994-05-05 | 2004-01-06 | Iridigm Display Corporation | Interferometric modulation of radiation |
US5498863A (en) | 1993-04-30 | 1996-03-12 | At&T Corp. | Wavelength-sensitive detectors based on absorbers in standing waves |
US5559358A (en) | 1993-05-25 | 1996-09-24 | Honeywell Inc. | Opto-electro-mechanical device or filter, process for making, and sensors made therefrom |
US5526172A (en) | 1993-07-27 | 1996-06-11 | Texas Instruments Incorporated | Microminiature, monolithic, variable electrical signal processor and apparatus including same |
EP0727823B1 (en) * | 1993-11-05 | 2007-03-21 | Citizen Watch Co. Ltd. | Solar battery device and its manufacture |
US5500761A (en) | 1994-01-27 | 1996-03-19 | At&T Corp. | Micromechanical modulator |
IL108506A (en) * | 1994-02-01 | 1997-06-10 | Yeda Res & Dev | Solar energy plant |
FI94804C (fi) | 1994-02-17 | 1995-10-25 | Vaisala Oy | Sähköisesti säädettävä pintamikromekaaninen Fabry-Perot-interferometri käytettäväksi optisessa materiaalianalyysissä |
US5665997A (en) | 1994-03-31 | 1997-09-09 | Texas Instruments Incorporated | Grated landing area to eliminate sticking of micro-mechanical devices |
US7852545B2 (en) | 1994-05-05 | 2010-12-14 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US7460291B2 (en) | 1994-05-05 | 2008-12-02 | Idc, Llc | Separable modulator |
US7808694B2 (en) | 1994-05-05 | 2010-10-05 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
US6040937A (en) * | 1994-05-05 | 2000-03-21 | Etalon, Inc. | Interferometric modulation |
US6680792B2 (en) | 1994-05-05 | 2004-01-20 | Iridigm Display Corporation | Interferometric modulation of radiation |
US20010003487A1 (en) | 1996-11-05 | 2001-06-14 | Mark W. Miles | Visible spectrum modulator arrays |
US8081369B2 (en) | 1994-05-05 | 2011-12-20 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7738157B2 (en) | 1994-05-05 | 2010-06-15 | Qualcomm Mems Technologies, Inc. | System and method for a MEMS device |
US7550794B2 (en) | 2002-09-20 | 2009-06-23 | Idc, Llc | Micromechanical systems device comprising a displaceable electrode and a charge-trapping layer |
US7776631B2 (en) | 1994-05-05 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | MEMS device and method of forming a MEMS device |
US7123216B1 (en) * | 1994-05-05 | 2006-10-17 | Idc, Llc | Photonic MEMS and structures |
US6710908B2 (en) | 1994-05-05 | 2004-03-23 | Iridigm Display Corporation | Controlling micro-electro-mechanical cavities |
US7826120B2 (en) | 1994-05-05 | 2010-11-02 | Qualcomm Mems Technologies, Inc. | Method and device for multi-color interferometric modulation |
US5920418A (en) | 1994-06-21 | 1999-07-06 | Matsushita Electric Industrial Co., Ltd. | Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical modulator and method for producing the same, and display device including such a diffractive optical modulator |
US5485304A (en) | 1994-07-29 | 1996-01-16 | Texas Instruments, Inc. | Support posts for micro-mechanical devices |
US5636052A (en) | 1994-07-29 | 1997-06-03 | Lucent Technologies Inc. | Direct view display based on a micromechanical modulation |
US5647036A (en) | 1994-09-09 | 1997-07-08 | Deacon Research | Projection display with electrically-controlled waveguide routing |
US5544268A (en) | 1994-09-09 | 1996-08-06 | Deacon Research | Display panel with electrically-controlled waveguide-routing |
JPH0894992A (ja) * | 1994-09-22 | 1996-04-12 | Casio Comput Co Ltd | 液晶表示素子 |
FR2726960B1 (fr) | 1994-11-10 | 1996-12-13 | Thomson Csf | Procede de realisation de transducteurs magnetoresistifs |
JPH08153700A (ja) | 1994-11-25 | 1996-06-11 | Semiconductor Energy Lab Co Ltd | 導電性被膜の異方性エッチング方法 |
GB9425334D0 (en) | 1994-12-15 | 1995-02-15 | Philips Electronics Uk Ltd | Liquid crystal display device and apparatus including such |
US5550373A (en) | 1994-12-30 | 1996-08-27 | Honeywell Inc. | Fabry-Perot micro filter-detector |
US7898722B2 (en) | 1995-05-01 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with restoring electrode |
US5886688A (en) * | 1995-06-02 | 1999-03-23 | National Semiconductor Corporation | Integrated solar panel and liquid crystal display for portable computer or the like |
US5661592A (en) | 1995-06-07 | 1997-08-26 | Silicon Light Machines | Method of making and an apparatus for a flat diffraction grating light valve |
US6849471B2 (en) | 2003-03-28 | 2005-02-01 | Reflectivity, Inc. | Barrier layers for microelectromechanical systems |
US6046840A (en) | 1995-06-19 | 2000-04-04 | Reflectivity, Inc. | Double substrate reflective spatial light modulator with self-limiting micro-mechanical elements |
US6124851A (en) | 1995-07-20 | 2000-09-26 | E Ink Corporation | Electronic book with multiple page displays |
KR100213026B1 (ko) | 1995-07-27 | 1999-08-02 | 윤종용 | 디엠디 및 그 제조공정 |
JP2728041B2 (ja) * | 1995-08-30 | 1998-03-18 | 日本電気株式会社 | 液晶パネル |
US6324192B1 (en) | 1995-09-29 | 2001-11-27 | Coretek, Inc. | Electrically tunable fabry-perot structure utilizing a deformable multi-layer mirror and method of making the same |
JPH09127551A (ja) | 1995-10-31 | 1997-05-16 | Sharp Corp | 半導体装置およびアクティブマトリクス基板 |
US7907319B2 (en) | 1995-11-06 | 2011-03-15 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light with optical compensation |
US5999306A (en) | 1995-12-01 | 1999-12-07 | Seiko Epson Corporation | Method of manufacturing spatial light modulator and electronic device employing it |
US5825528A (en) | 1995-12-26 | 1998-10-20 | Lucent Technologies Inc. | Phase-mismatched fabry-perot cavity micromechanical modulator |
JP3799092B2 (ja) | 1995-12-29 | 2006-07-19 | アジレント・テクノロジーズ・インク | 光変調装置及びディスプレイ装置 |
US5751469A (en) | 1996-02-01 | 1998-05-12 | Lucent Technologies Inc. | Method and apparatus for an improved micromechanical modulator |
JP3641872B2 (ja) * | 1996-04-08 | 2005-04-27 | 株式会社日立製作所 | 記憶装置システム |
WO1997044707A2 (en) * | 1996-05-24 | 1997-11-27 | Digital D.J. Incorporated | Liquid crystal display device with integrated solar power source and antenna |
US5726805A (en) | 1996-06-25 | 1998-03-10 | Sandia Corporation | Optical filter including a sub-wavelength periodic structure and method of making |
US5907426A (en) | 1996-06-28 | 1999-05-25 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Stabilizing device for optical modulator |
US5720827A (en) * | 1996-07-19 | 1998-02-24 | University Of Florida | Design for the fabrication of high efficiency solar cells |
US5710656A (en) | 1996-07-30 | 1998-01-20 | Lucent Technologies Inc. | Micromechanical optical modulator having a reduced-mass composite membrane |
US5838484A (en) | 1996-08-19 | 1998-11-17 | Lucent Technologies Inc. | Micromechanical optical modulator with linear operating characteristic |
GB9619781D0 (en) | 1996-09-23 | 1996-11-06 | Secr Defence | Multi layer interference coatings |
US5771116A (en) | 1996-10-21 | 1998-06-23 | Texas Instruments Incorporated | Multiple bias level reset waveform for enhanced DMD control |
FR2756105B1 (fr) | 1996-11-19 | 1999-03-26 | Commissariat Energie Atomique | Detecteur multispectral a cavite resonante |
US6094285A (en) * | 1996-12-04 | 2000-07-25 | Trw Inc. | All optical RF signal channelizer |
US7830588B2 (en) | 1996-12-19 | 2010-11-09 | Qualcomm Mems Technologies, Inc. | Method of making a light modulating display device and associated transistor circuitry and structures thereof |
US6028689A (en) | 1997-01-24 | 2000-02-22 | The United States Of America As Represented By The Secretary Of The Air Force | Multi-motion micromirror |
US5786927A (en) | 1997-03-12 | 1998-07-28 | Lucent Technologies Inc. | Gas-damped micromechanical structure |
US6123431A (en) | 1997-03-19 | 2000-09-26 | Sanyo Electric Co., Ltd | Backlight apparatus and light guide plate |
US6384952B1 (en) | 1997-03-27 | 2002-05-07 | Mems Optical Inc. | Vertical comb drive actuated deformable mirror device and method |
EP0879991A3 (en) | 1997-05-13 | 1999-04-21 | Matsushita Electric Industrial Co., Ltd. | Illuminating system |
JPH10325948A (ja) * | 1997-05-26 | 1998-12-08 | Matsushita Electron Corp | 反射型画像表示装置 |
US5870221A (en) | 1997-07-25 | 1999-02-09 | Lucent Technologies, Inc. | Micromechanical modulator having enhanced performance |
US5867302A (en) | 1997-08-07 | 1999-02-02 | Sandia Corporation | Bistable microelectromechanical actuator |
US6008449A (en) | 1997-08-19 | 1999-12-28 | Cole; Eric D. | Reflective concentrating solar cell assembly |
US6031653A (en) | 1997-08-28 | 2000-02-29 | California Institute Of Technology | Low-cost thin-metal-film interference filters |
US6021007A (en) | 1997-10-18 | 2000-02-01 | Murtha; R. Michael | Side-collecting lightguide |
DE69830153T2 (de) | 1998-01-20 | 2005-10-13 | Seiko Epson Corp. | Optische schaltvorrichtung und bildanzeigevorrichtung |
US5914804A (en) | 1998-01-28 | 1999-06-22 | Lucent Technologies Inc | Double-cavity micromechanical optical modulator with plural multilayer mirrors |
US6100861A (en) | 1998-02-17 | 2000-08-08 | Rainbow Displays, Inc. | Tiled flat panel display with improved color gamut |
US6262697B1 (en) | 1998-03-20 | 2001-07-17 | Eastman Kodak Company | Display having viewable and conductive images |
EP0986109A4 (en) | 1998-03-25 | 2005-01-12 | Tdk Corp | Solar battery module |
US7532377B2 (en) | 1998-04-08 | 2009-05-12 | Idc, Llc | Movable micro-electromechanical device |
KR100703140B1 (ko) | 1998-04-08 | 2007-04-05 | 이리다임 디스플레이 코포레이션 | 간섭 변조기 및 그 제조 방법 |
US8928967B2 (en) | 1998-04-08 | 2015-01-06 | Qualcomm Mems Technologies, Inc. | Method and device for modulating light |
JP4106735B2 (ja) * | 1998-04-13 | 2008-06-25 | 凸版印刷株式会社 | 太陽電池付反射型ディスプレイ |
JP4019496B2 (ja) * | 1998-04-15 | 2007-12-12 | 凸版印刷株式会社 | 太陽電池付反射型カラーディスプレイ及び太陽電池付反射型カラーディスプレイを持つicカード |
JP4520545B2 (ja) * | 1998-04-17 | 2010-08-04 | セイコーインスツル株式会社 | 反射型液晶表示装置及びその製造方法 |
US6097145A (en) | 1998-04-27 | 2000-08-01 | Copytele, Inc. | Aerogel-based phase transition flat panel display |
US6046659A (en) | 1998-05-15 | 2000-04-04 | Hughes Electronics Corporation | Design and fabrication of broadband surface-micromachined micro-electro-mechanical switches for microwave and millimeter-wave applications |
US6700054B2 (en) * | 1998-07-27 | 2004-03-02 | Sunbear Technologies, Llc | Solar collector for solar energy systems |
US6242989B1 (en) | 1998-09-12 | 2001-06-05 | Agere Systems Guardian Corp. | Article comprising a multi-port variable capacitor |
JP3259692B2 (ja) | 1998-09-18 | 2002-02-25 | 株式会社日立製作所 | 集光型太陽光発電モジュール及びその製造方法並びに集光型太陽光発電システム |
US6323834B1 (en) | 1998-10-08 | 2001-11-27 | International Business Machines Corporation | Micromechanical displays and fabrication method |
JP3919954B2 (ja) | 1998-10-16 | 2007-05-30 | 富士フイルム株式会社 | アレイ型光変調素子及び平面ディスプレイの駆動方法 |
JP2000147262A (ja) | 1998-11-11 | 2000-05-26 | Nobuyuki Higuchi | 集光装置及びこれを利用した太陽光発電システム |
JP3506978B2 (ja) * | 1998-11-27 | 2004-03-15 | シャープ株式会社 | 反射型液晶表示装置 |
US6188519B1 (en) | 1999-01-05 | 2001-02-13 | Kenneth Carlisle Johnson | Bigrating light valve |
US6242932B1 (en) | 1999-02-19 | 2001-06-05 | Micron Technology, Inc. | Interposer for semiconductor components having contact balls |
JP3657143B2 (ja) | 1999-04-27 | 2005-06-08 | シャープ株式会社 | 太陽電池及びその製造方法 |
US6323987B1 (en) | 1999-05-14 | 2001-11-27 | Agere Systems Optoelectronics Guardian Corp. | Controlled multi-wavelength etalon |
AU5405400A (en) | 1999-06-14 | 2001-01-02 | Carlos J.R.P. Augusto | Stacked wavelength-selective opto-electronic device |
US6335235B1 (en) | 1999-08-17 | 2002-01-01 | Advanced Micro Devices, Inc. | Simplified method of patterning field dielectric regions in a semiconductor device |
WO2003007049A1 (en) | 1999-10-05 | 2003-01-23 | Iridigm Display Corporation | Photonic mems and structures |
US6351329B1 (en) | 1999-10-08 | 2002-02-26 | Lucent Technologies Inc. | Optical attenuator |
US6518944B1 (en) * | 1999-10-25 | 2003-02-11 | Kent Displays, Inc. | Combined cholesteric liquid crystal display and solar cell assembly device |
US6960305B2 (en) | 1999-10-26 | 2005-11-01 | Reflectivity, Inc | Methods for forming and releasing microelectromechanical structures |
US6519073B1 (en) | 2000-01-10 | 2003-02-11 | Lucent Technologies Inc. | Micromechanical modulator and methods for fabricating the same |
CN1258448C (zh) | 2000-01-21 | 2006-06-07 | 光学涂层实验公司 | 光学可变防伪图样 |
US7161569B2 (en) | 2000-01-21 | 2007-01-09 | Citizen Watch Co., Ltd. | Driving method of liquid crystal display panel and liquid crystal display device |
US6307663B1 (en) | 2000-01-26 | 2001-10-23 | Eastman Kodak Company | Spatial light modulator with conformal grating device |
JP2001221913A (ja) | 2000-02-08 | 2001-08-17 | Yokogawa Electric Corp | ファブリペローフィルタ及び赤外線ガス分析計 |
GB2359636B (en) | 2000-02-22 | 2002-05-01 | Marconi Comm Ltd | Wavelength selective optical filter |
CN1160684C (zh) | 2000-02-24 | 2004-08-04 | 皇家菲利浦电子有限公司 | 包括光波导的显示器件 |
US6836366B1 (en) | 2000-03-03 | 2004-12-28 | Axsun Technologies, Inc. | Integrated tunable fabry-perot filter and method of making same |
US6747775B2 (en) | 2000-03-20 | 2004-06-08 | Np Photonics, Inc. | Detunable Fabry-Perot interferometer and an add/drop multiplexer using the same |
US6698295B1 (en) | 2000-03-31 | 2004-03-02 | Shipley Company, L.L.C. | Microstructures comprising silicon nitride layer and thin conductive polysilicon layer |
US6400738B1 (en) | 2000-04-14 | 2002-06-04 | Agilent Technologies, Inc. | Tunable Fabry-Perot filters and lasers |
JP2001345458A (ja) | 2000-05-30 | 2001-12-14 | Kyocera Corp | 太陽電池 |
FR2811139B1 (fr) | 2000-06-29 | 2003-10-17 | Centre Nat Rech Scient | Dispositif optoelectronique a filtrage de longueur d'onde integre |
EP1170618B1 (en) | 2000-07-03 | 2010-06-16 | Sony Corporation | Optical multilayer structure, optical switching device, and image display |
JP2002062490A (ja) | 2000-08-14 | 2002-02-28 | Canon Inc | 干渉性変調素子 |
US6466354B1 (en) | 2000-09-19 | 2002-10-15 | Silicon Light Machines | Method and apparatus for interferometric modulation of light |
US6714565B1 (en) | 2000-11-01 | 2004-03-30 | Agilent Technologies, Inc. | Optically tunable Fabry Perot microelectromechanical resonator |
US6556338B2 (en) | 2000-11-03 | 2003-04-29 | Intpax, Inc. | MEMS based variable optical attenuator (MBVOA) |
US6433917B1 (en) | 2000-11-22 | 2002-08-13 | Ball Semiconductor, Inc. | Light modulation device and system |
US6906847B2 (en) | 2000-12-07 | 2005-06-14 | Reflectivity, Inc | Spatial light modulators with light blocking/absorbing areas |
JP2002174780A (ja) | 2000-12-08 | 2002-06-21 | Stanley Electric Co Ltd | 反射型カラー表示器 |
US6614576B2 (en) | 2000-12-15 | 2003-09-02 | Texas Instruments Incorporated | Surface micro-planarization for enhanced optical efficiency and pixel performance in SLM devices |
JP4849746B2 (ja) * | 2000-12-21 | 2012-01-11 | セイコーインスツル株式会社 | 携帯情報機器 |
DE10064616C2 (de) * | 2000-12-22 | 2003-02-06 | Ovd Kinegram Ag Zug | Dekorfolie und Verfahren zum Beschriften der Dekorfolie |
US20020149834A1 (en) | 2000-12-22 | 2002-10-17 | Ball Semiconductor, Inc. | Light modulation device and system |
JP2002221678A (ja) | 2001-01-25 | 2002-08-09 | Seiko Epson Corp | 光スイッチングデバイス、その製造方法および画像表示装置 |
US6912078B2 (en) | 2001-03-16 | 2005-06-28 | Corning Incorporated | Electrostatically actuated micro-electro-mechanical devices and method of manufacture |
JP3888075B2 (ja) | 2001-03-23 | 2007-02-28 | セイコーエプソン株式会社 | 光スイッチング素子、光スイッチングデバイス、および画像表示装置 |
US6661561B2 (en) | 2001-03-26 | 2003-12-09 | Creo Inc. | High frequency deformable mirror device |
US6630786B2 (en) | 2001-03-30 | 2003-10-07 | Candescent Technologies Corporation | Light-emitting device having light-reflective layer formed with, or/and adjacent to, material that enhances device performance |
US6600587B2 (en) | 2001-04-23 | 2003-07-29 | Memx, Inc. | Surface micromachined optical system with reinforced mirror microstructure |
US6657832B2 (en) | 2001-04-26 | 2003-12-02 | Texas Instruments Incorporated | Mechanically assisted restoring force support for micromachined membranes |
US6800210B2 (en) | 2001-05-22 | 2004-10-05 | Reflectivity, Inc. | Method for making a micromechanical device by removing a sacrificial layer with multiple sequential etchants |
JP4526223B2 (ja) | 2001-06-29 | 2010-08-18 | シャープ株式会社 | 配線部材ならびに太陽電池モジュールおよびその製造方法 |
JP3740444B2 (ja) | 2001-07-11 | 2006-02-01 | キヤノン株式会社 | 光偏向器、それを用いた光学機器、ねじれ揺動体 |
JP4032216B2 (ja) | 2001-07-12 | 2008-01-16 | ソニー株式会社 | 光学多層構造体およびその製造方法、並びに光スイッチング素子および画像表示装置 |
US6594059B2 (en) | 2001-07-16 | 2003-07-15 | Axsun Technologies, Inc. | Tilt mirror fabry-perot filter system, fabrication process therefor, and method of operation thereof |
US6632698B2 (en) | 2001-08-07 | 2003-10-14 | Hewlett-Packard Development Company, L.P. | Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS |
US6661562B2 (en) | 2001-08-17 | 2003-12-09 | Lucent Technologies Inc. | Optical modulator and method of manufacture thereof |
JP2003086233A (ja) | 2001-09-07 | 2003-03-20 | Mitsubishi Electric Corp | 平板型電池およびその製法 |
US7015457B2 (en) | 2002-03-18 | 2006-03-21 | Honeywell International Inc. | Spectrally tunable detector |
US20030053078A1 (en) | 2001-09-17 | 2003-03-20 | Mark Missey | Microelectromechanical tunable fabry-perot wavelength monitor with thermal actuators |
JP2003124491A (ja) * | 2001-10-15 | 2003-04-25 | Sharp Corp | 薄膜太陽電池モジュール |
ATE341098T1 (de) | 2001-11-09 | 2006-10-15 | Wispry Inc | Dreischichtige strahl-mems-einrichtung und diesbezügliche verfahren |
TWI234157B (en) | 2001-12-07 | 2005-06-11 | Matsushita Electric Ind Co Ltd | Information recording medium and method for producing the same |
JP2003177336A (ja) | 2001-12-11 | 2003-06-27 | Fuji Photo Film Co Ltd | 光変調素子及び光変調素子アレイ並びにそれを用いた露光装置 |
US6791735B2 (en) | 2002-01-09 | 2004-09-14 | The Regents Of The University Of California | Differentially-driven MEMS spatial light modulator |
US20070107776A1 (en) | 2002-01-25 | 2007-05-17 | Konarka Technologies, Inc., A Delaware Corporation | Photovoltaic powered multimedia greeting cards and smart cards |
US6608268B1 (en) | 2002-02-05 | 2003-08-19 | Memtronics, A Division Of Cogent Solutions, Inc. | Proximity micro-electro-mechanical system |
US6794119B2 (en) | 2002-02-12 | 2004-09-21 | Iridigm Display Corporation | Method for fabricating a structure for a microelectromechanical systems (MEMS) device |
US7369735B2 (en) | 2002-02-15 | 2008-05-06 | Biosynergetics, Inc. | Apparatus for the collection and transmission of electromagnetic radiation |
US6574033B1 (en) | 2002-02-27 | 2003-06-03 | Iridigm Display Corporation | Microelectromechanical systems device and method for fabricating same |
WO2003075617A1 (fr) | 2002-03-01 | 2003-09-12 | Sharp Kabushiki Kaisha | Dispositif emetteur lumiere et affichage utilisant ce dispositif et dispositif de lecture |
US7145143B2 (en) | 2002-03-18 | 2006-12-05 | Honeywell International Inc. | Tunable sensor |
US6768555B2 (en) * | 2002-03-21 | 2004-07-27 | Industrial Technology Research Institute | Fabry-Perot filter apparatus with enhanced optical discrimination |
US6965468B2 (en) | 2003-07-03 | 2005-11-15 | Reflectivity, Inc | Micromirror array having reduced gap between adjacent micromirrors of the micromirror array |
KR20030081662A (ko) | 2002-04-12 | 2003-10-22 | 삼성에스디아이 주식회사 | 이중층 반사방지막이 형성된 태양전지 |
US6972882B2 (en) | 2002-04-30 | 2005-12-06 | Hewlett-Packard Development Company, L.P. | Micro-mirror device with light angle amplification |
US6954297B2 (en) | 2002-04-30 | 2005-10-11 | Hewlett-Packard Development Company, L.P. | Micro-mirror device including dielectrophoretic liquid |
DE10221301B4 (de) * | 2002-05-14 | 2004-07-29 | Junghans Uhren Gmbh | Vorrichtung mit Solarzellenanordnung und Flüssigkristallanzeige |
US6689949B2 (en) * | 2002-05-17 | 2004-02-10 | United Innovations, Inc. | Concentrating photovoltaic cavity converters for extreme solar-to-electric conversion efficiencies |
JP2003340795A (ja) | 2002-05-20 | 2003-12-02 | Sony Corp | 静電駆動型mems素子とその製造方法、光学mems素子、光変調素子、glvデバイス及びレーザディスプレイ |
JP4123415B2 (ja) | 2002-05-20 | 2008-07-23 | ソニー株式会社 | 固体撮像装置 |
JP2003347563A (ja) | 2002-05-27 | 2003-12-05 | Canon Inc | 積層型光起電力素子 |
JP3801099B2 (ja) | 2002-06-04 | 2006-07-26 | 株式会社デンソー | チューナブルフィルタ、その製造方法、及びそれを使用した光スイッチング装置 |
US6813059B2 (en) | 2002-06-28 | 2004-11-02 | Silicon Light Machines, Inc. | Reduced formation of asperities in contact micro-structures |
US6741377B2 (en) * | 2002-07-02 | 2004-05-25 | Iridigm Display Corporation | Device having a light-absorbing mask and a method for fabricating same |
US6738194B1 (en) | 2002-07-22 | 2004-05-18 | The United States Of America As Represented By The Secretary Of The Navy | Resonance tunable optical filter |
US6822798B2 (en) | 2002-08-09 | 2004-11-23 | Optron Systems, Inc. | Tunable optical filter |
US6970155B2 (en) * | 2002-08-14 | 2005-11-29 | Light Modulation, Inc. | Optical resonant gel display |
JP4057871B2 (ja) | 2002-09-19 | 2008-03-05 | 東芝松下ディスプレイテクノロジー株式会社 | 液晶表示装置 |
AU2003260825A1 (en) | 2002-09-19 | 2004-04-08 | Koninklijke Philips Electronics N.V. | Switchable optical element |
KR100512960B1 (ko) | 2002-09-26 | 2005-09-07 | 삼성전자주식회사 | 플렉서블 mems 트랜스듀서와 그 제조방법 및 이를채용한 플렉서블 mems 무선 마이크로폰 |
US7085121B2 (en) | 2002-10-21 | 2006-08-01 | Hrl Laboratories, Llc | Variable capacitance membrane actuator for wide band tuning of microstrip resonators and filters |
FR2846318B1 (fr) | 2002-10-24 | 2005-01-07 | Commissariat Energie Atomique | Microstructure electromecanique integree comportant des moyens de reglage de la pression dans une cavite scellee et procede de reglage de la pression |
US7370185B2 (en) | 2003-04-30 | 2008-05-06 | Hewlett-Packard Development Company, L.P. | Self-packaged optical interference display device having anti-stiction bumps, integral micro-lens, and reflection-absorbing layers |
US6958846B2 (en) | 2002-11-26 | 2005-10-25 | Reflectivity, Inc | Spatial light modulators with light absorbing areas |
US6844959B2 (en) | 2002-11-26 | 2005-01-18 | Reflectivity, Inc | Spatial light modulators with light absorbing areas |
GB2396436B (en) | 2002-12-19 | 2006-06-28 | Thales Plc | An optical filter |
TWI289708B (en) | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
TW594155B (en) | 2002-12-27 | 2004-06-21 | Prime View Int Corp Ltd | Optical interference type color display and optical interference modulator |
JP2004212680A (ja) | 2002-12-27 | 2004-07-29 | Fuji Photo Film Co Ltd | 光変調素子アレイ及びその製造方法 |
TW559686B (en) | 2002-12-27 | 2003-11-01 | Prime View Int Co Ltd | Optical interference type panel and the manufacturing method thereof |
JP2004212638A (ja) | 2002-12-27 | 2004-07-29 | Fuji Photo Film Co Ltd | 光変調素子及び平面表示素子 |
US6906436B2 (en) | 2003-01-02 | 2005-06-14 | Cymbet Corporation | Solid state activity-activated battery device and method |
JP2004219843A (ja) | 2003-01-16 | 2004-08-05 | Seiko Epson Corp | 光変調器、表示装置及びその製造方法 |
TW200413810A (en) | 2003-01-29 | 2004-08-01 | Prime View Int Co Ltd | Light interference display panel and its manufacturing method |
TW557395B (en) | 2003-01-29 | 2003-10-11 | Yen Sun Technology Corp | Optical interference type reflection panel and the manufacturing method thereof |
US7436573B2 (en) | 2003-02-12 | 2008-10-14 | Texas Instruments Incorporated | Electrical connections in microelectromechanical devices |
US7459402B2 (en) | 2003-02-12 | 2008-12-02 | Texas Instruments Incorporated | Protection layers in micromirror array devices |
TW200417806A (en) | 2003-03-05 | 2004-09-16 | Prime View Int Corp Ltd | A structure of a light-incidence electrode of an optical interference display plate |
US6913942B2 (en) | 2003-03-28 | 2005-07-05 | Reflectvity, Inc | Sacrificial layers for use in fabrications of microelectromechanical devices |
US7388147B2 (en) | 2003-04-10 | 2008-06-17 | Sunpower Corporation | Metal contact structure for solar cell and method of manufacture |
TWI224235B (en) | 2003-04-21 | 2004-11-21 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
TW594360B (en) | 2003-04-21 | 2004-06-21 | Prime View Int Corp Ltd | A method for fabricating an interference display cell |
TW567355B (en) | 2003-04-21 | 2003-12-21 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
TWI226504B (en) | 2003-04-21 | 2005-01-11 | Prime View Int Co Ltd | A structure of an interference display cell |
US7218438B2 (en) | 2003-04-30 | 2007-05-15 | Hewlett-Packard Development Company, L.P. | Optical electronic device with partial reflector layer |
US7072093B2 (en) | 2003-04-30 | 2006-07-04 | Hewlett-Packard Development Company, L.P. | Optical interference pixel display with charge control |
US7447891B2 (en) | 2003-04-30 | 2008-11-04 | Hewlett-Packard Development Company, L.P. | Light modulator with concentric control-electrode structure |
US6940630B2 (en) | 2003-05-01 | 2005-09-06 | University Of Florida Research Foundation, Inc. | Vertical displacement device |
JP4075678B2 (ja) * | 2003-05-06 | 2008-04-16 | ソニー株式会社 | 固体撮像素子 |
TW591716B (en) | 2003-05-26 | 2004-06-11 | Prime View Int Co Ltd | A structure of a structure release and manufacturing the same |
TW570896B (en) | 2003-05-26 | 2004-01-11 | Prime View Int Co Ltd | A method for fabricating an interference display cell |
TWI223855B (en) | 2003-06-09 | 2004-11-11 | Taiwan Semiconductor Mfg | Method for manufacturing reflective spatial light modulator mirror devices |
JP2007027150A (ja) | 2003-06-23 | 2007-02-01 | Hitachi Chem Co Ltd | 集光型光発電システム |
US7221495B2 (en) | 2003-06-24 | 2007-05-22 | Idc Llc | Thin film precursor stack for MEMS manufacturing |
JP2005018185A (ja) * | 2003-06-24 | 2005-01-20 | Hitachi Ltd | 記憶装置システム |
DE10329917B4 (de) | 2003-07-02 | 2005-12-22 | Schott Ag | Beschichtetes Abdeckglas für Photovoltaik-Module |
US6862127B1 (en) | 2003-11-01 | 2005-03-01 | Fusao Ishii | High performance micromirror arrays and methods of manufacturing the same |
JP3786106B2 (ja) | 2003-08-11 | 2006-06-14 | セイコーエプソン株式会社 | 波長可変光フィルタ及びその製造方法 |
TWI251712B (en) | 2003-08-15 | 2006-03-21 | Prime View Int Corp Ltd | Interference display plate |
TW200506479A (en) | 2003-08-15 | 2005-02-16 | Prime View Int Co Ltd | Color changeable pixel for an interference display |
TWI231865B (en) | 2003-08-26 | 2005-05-01 | Prime View Int Co Ltd | An interference display cell and fabrication method thereof |
TWI230801B (en) | 2003-08-29 | 2005-04-11 | Prime View Int Co Ltd | Reflective display unit using interferometric modulation and manufacturing method thereof |
JP3979982B2 (ja) | 2003-08-29 | 2007-09-19 | シャープ株式会社 | 干渉性変調器および表示装置 |
TWI232333B (en) | 2003-09-03 | 2005-05-11 | Prime View Int Co Ltd | Display unit using interferometric modulation and manufacturing method thereof |
US6982820B2 (en) | 2003-09-26 | 2006-01-03 | Prime View International Co., Ltd. | Color changeable pixel |
US7027204B2 (en) | 2003-09-26 | 2006-04-11 | Silicon Light Machines Corporation | High-density spatial light modulator |
TW593126B (en) | 2003-09-30 | 2004-06-21 | Prime View Int Co Ltd | A structure of a micro electro mechanical system and manufacturing the same |
US6861277B1 (en) | 2003-10-02 | 2005-03-01 | Hewlett-Packard Development Company, L.P. | Method of forming MEMS device |
JP2005121906A (ja) | 2003-10-16 | 2005-05-12 | Fuji Photo Film Co Ltd | 反射型光変調アレイ素子及び露光装置 |
US7782523B2 (en) | 2003-11-01 | 2010-08-24 | Fusao Ishii | Analog micromirror devices with continuous intermediate states |
TW200524236A (en) * | 2003-12-01 | 2005-07-16 | Nl Nanosemiconductor Gmbh | Optoelectronic device incorporating an interference filter |
US7430355B2 (en) | 2003-12-08 | 2008-09-30 | University Of Cincinnati | Light emissive signage devices based on lightwave coupling |
EP1544657B1 (en) | 2003-12-19 | 2012-04-04 | Barco N.V. | Broadband full white reflective display structure |
WO2005089098A2 (en) * | 2004-01-14 | 2005-09-29 | The Regents Of The University Of California | Ultra broadband mirror using subwavelength grating |
TWI235345B (en) | 2004-01-20 | 2005-07-01 | Prime View Int Co Ltd | A structure of an optical interference display unit |
JP2005235403A (ja) | 2004-02-17 | 2005-09-02 | Hitachi Displays Ltd | 有機・el表示装置 |
TWI256941B (en) | 2004-02-18 | 2006-06-21 | Qualcomm Mems Technologies Inc | A micro electro mechanical system display cell and method for fabricating thereof |
US7119945B2 (en) | 2004-03-03 | 2006-10-10 | Idc, Llc | Altering temporal response of microelectromechanical elements |
TW200530669A (en) | 2004-03-05 | 2005-09-16 | Prime View Int Co Ltd | Interference display plate and manufacturing method thereof |
TWI261683B (en) | 2004-03-10 | 2006-09-11 | Qualcomm Mems Technologies Inc | Interference reflective element and repairing method thereof |
JP4645048B2 (ja) * | 2004-03-16 | 2011-03-09 | 富士ゼロックス株式会社 | 画像表示媒体および画像表示装置 |
JP4581453B2 (ja) | 2004-03-29 | 2010-11-17 | ソニー株式会社 | Mems素子、光学mems素子、回折型光学mems素子、並びにレーザディスプレイ |
JP4627627B2 (ja) * | 2004-03-31 | 2011-02-09 | 富士通株式会社 | マイクロミラー素子および光スイッチ |
US7245285B2 (en) | 2004-04-28 | 2007-07-17 | Hewlett-Packard Development Company, L.P. | Pixel device |
US7476327B2 (en) | 2004-05-04 | 2009-01-13 | Idc, Llc | Method of manufacture for microelectromechanical devices |
US7787170B2 (en) | 2004-06-15 | 2010-08-31 | Texas Instruments Incorporated | Micromirror array assembly with in-array pillars |
TWI233916B (en) | 2004-07-09 | 2005-06-11 | Prime View Int Co Ltd | A structure of a micro electro mechanical system |
EP1774391A4 (en) | 2004-07-09 | 2009-11-04 | Univ Cincinnati | ELECTROMOUPLING LIGHT MODULATOR FOR DISPLAY |
TWI270722B (en) | 2004-07-23 | 2007-01-11 | Au Optronics Corp | Dual-side display panel |
KR101354520B1 (ko) | 2004-07-29 | 2014-01-21 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 간섭 변조기의 미소기전 동작을 위한 시스템 및 방법 |
US7372348B2 (en) | 2004-08-20 | 2008-05-13 | Palo Alto Research Center Incorporated | Stressed material and shape memory material MEMS devices and methods for manufacturing |
WO2006034377A2 (en) | 2004-09-22 | 2006-03-30 | The Board Of Trustees Of The University Of Illinois | Light powered microactuator, microfluidic dispenser and retinal prosthesis |
US7554714B2 (en) | 2004-09-27 | 2009-06-30 | Idc, Llc | Device and method for manipulation of thermal response in a modulator |
US7184202B2 (en) | 2004-09-27 | 2007-02-27 | Idc, Llc | Method and system for packaging a MEMS device |
US7564612B2 (en) | 2004-09-27 | 2009-07-21 | Idc, Llc | Photonic MEMS and structures |
US7668415B2 (en) | 2004-09-27 | 2010-02-23 | Qualcomm Mems Technologies, Inc. | Method and device for providing electronic circuitry on a backplate |
US7327510B2 (en) | 2004-09-27 | 2008-02-05 | Idc, Llc | Process for modifying offset voltage characteristics of an interferometric modulator |
US7321456B2 (en) | 2004-09-27 | 2008-01-22 | Idc, Llc | Method and device for corner interferometric modulation |
US7898521B2 (en) | 2004-09-27 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Device and method for wavelength filtering |
US7304784B2 (en) | 2004-09-27 | 2007-12-04 | Idc, Llc | Reflective display device having viewable display on both sides |
EP1640958A2 (en) * | 2004-09-27 | 2006-03-29 | Idc, Llc | System with server based control of client device display features |
US7289259B2 (en) | 2004-09-27 | 2007-10-30 | Idc, Llc | Conductive bus structure for interferometric modulator array |
US7302157B2 (en) | 2004-09-27 | 2007-11-27 | Idc, Llc | System and method for multi-level brightness in interferometric modulation |
US7527995B2 (en) | 2004-09-27 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of making prestructure for MEMS systems |
US7612932B2 (en) | 2004-09-27 | 2009-11-03 | Idc, Llc | Microelectromechanical device with optical function separated from mechanical and electrical function |
US8102407B2 (en) | 2004-09-27 | 2012-01-24 | Qualcomm Mems Technologies, Inc. | Method and device for manipulating color in a display |
US20060176487A1 (en) * | 2004-09-27 | 2006-08-10 | William Cummings | Process control monitors for interferometric modulators |
US7420725B2 (en) | 2004-09-27 | 2008-09-02 | Idc, Llc | Device having a conductive light absorbing mask and method for fabricating same |
US8008736B2 (en) | 2004-09-27 | 2011-08-30 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device |
US7893919B2 (en) | 2004-09-27 | 2011-02-22 | Qualcomm Mems Technologies, Inc. | Display region architectures |
US7372613B2 (en) | 2004-09-27 | 2008-05-13 | Idc, Llc | Method and device for multistate interferometric light modulation |
US7936497B2 (en) | 2004-09-27 | 2011-05-03 | Qualcomm Mems Technologies, Inc. | MEMS device having deformable membrane characterized by mechanical persistence |
US7630119B2 (en) | 2004-09-27 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Apparatus and method for reducing slippage between structures in an interferometric modulator |
US7719500B2 (en) | 2004-09-27 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | Reflective display pixels arranged in non-rectangular arrays |
US7710632B2 (en) | 2004-09-27 | 2010-05-04 | Qualcomm Mems Technologies, Inc. | Display device having an array of spatial light modulators with integrated color filters |
US7944599B2 (en) | 2004-09-27 | 2011-05-17 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7130104B2 (en) | 2004-09-27 | 2006-10-31 | Idc, Llc | Methods and devices for inhibiting tilting of a mirror in an interferometric modulator |
US7911428B2 (en) | 2004-09-27 | 2011-03-22 | Qualcomm Mems Technologies, Inc. | Method and device for manipulating color in a display |
US7750886B2 (en) | 2004-09-27 | 2010-07-06 | Qualcomm Mems Technologies, Inc. | Methods and devices for lighting displays |
JP4155361B2 (ja) | 2004-09-27 | 2008-09-24 | 株式会社デュエラ | シート状集光器及びこれを用いた太陽電池シート |
EP1640318A2 (en) | 2004-09-27 | 2006-03-29 | Idc, Llc | Methods of fabricating interferometric modulators by selectively removing a material |
JP4384005B2 (ja) | 2004-10-15 | 2009-12-16 | 株式会社東芝 | 表示装置 |
EP1807855B1 (en) | 2004-10-27 | 2015-09-09 | Epcos Ag | Electronic device |
US20080068697A1 (en) | 2004-10-29 | 2008-03-20 | Haluzak Charles C | Micro-Displays and Their Manufacture |
US20060132927A1 (en) | 2004-11-30 | 2006-06-22 | Yoon Frank C | Electrowetting chromatophore |
JP4634129B2 (ja) | 2004-12-10 | 2011-02-16 | 三菱重工業株式会社 | 光散乱膜,及びそれを用いる光デバイス |
US20060130889A1 (en) | 2004-12-22 | 2006-06-22 | Motorola, Inc. | Solar panel with optical films |
US7504770B2 (en) | 2005-02-09 | 2009-03-17 | Osram Opto Semiconductors Gmbh | Enhancement of light extraction with cavity and surface modification |
US7521666B2 (en) * | 2005-02-17 | 2009-04-21 | Capella Microsystems Inc. | Multi-cavity Fabry-Perot ambient light filter apparatus |
US7405852B2 (en) | 2005-02-23 | 2008-07-29 | Pixtronix, Inc. | Display apparatus and methods for manufacture thereof |
US7675665B2 (en) | 2005-02-23 | 2010-03-09 | Pixtronix, Incorporated | Methods and apparatus for actuating displays |
US8310442B2 (en) | 2005-02-23 | 2012-11-13 | Pixtronix, Inc. | Circuits for controlling display apparatus |
JP2006270021A (ja) * | 2005-02-28 | 2006-10-05 | Fuji Photo Film Co Ltd | 積層型光電変換素子 |
US7346977B2 (en) * | 2005-03-03 | 2008-03-25 | Hitachi Global Storage Technologies Netherlands B.V. | Method for making a magnetoresistive read head having a pinned layer width greater than the free layer stripe height |
JP4743846B2 (ja) | 2005-05-10 | 2011-08-10 | シチズン電子株式会社 | 光通信装置及びそれを用いた情報機器 |
US7884989B2 (en) | 2005-05-27 | 2011-02-08 | Qualcomm Mems Technologies, Inc. | White interferometric modulators and methods for forming the same |
US7460292B2 (en) | 2005-06-03 | 2008-12-02 | Qualcomm Mems Technologies, Inc. | Interferometric modulator with internal polarization and drive method |
US7184195B2 (en) | 2005-06-15 | 2007-02-27 | Miradia Inc. | Method and structure reducing parasitic influences of deflection devices in an integrated spatial light modulator |
CN101203896B (zh) * | 2005-06-23 | 2012-07-18 | 统宝香港控股有限公司 | 具有光电转换功能的显示装置 |
DE102005046156B3 (de) | 2005-09-27 | 2007-05-31 | Siemens Ag | Vorrichtung mit Funktionselement und Verfahren zum Herstellen der Vorrichtung |
US8574823B2 (en) * | 2005-10-05 | 2013-11-05 | Hewlett-Packard Development Company, L.P. | Multi-level layer |
GB0521251D0 (en) | 2005-10-19 | 2005-11-30 | Qinetiq Ltd | Optical modulation |
US7760197B2 (en) | 2005-10-31 | 2010-07-20 | Hewlett-Packard Development Company, L.P. | Fabry-perot interferometric MEMS electromagnetic wave modulator with zero-electric field |
JP2006065360A (ja) | 2005-11-16 | 2006-03-09 | Omron Corp | 導光器及び表示装置 |
US20070113887A1 (en) * | 2005-11-18 | 2007-05-24 | Lih-Hong Laih | Material system of photovoltaic cell with micro-cavity |
US20070125415A1 (en) | 2005-12-05 | 2007-06-07 | Massachusetts Institute Of Technology | Light capture with patterned solar cell bus wires |
JP2007167998A (ja) | 2005-12-20 | 2007-07-05 | Toshiba Corp | 梁構造を有する装置、および半導体装置 |
TWI428642B (zh) | 2005-12-21 | 2014-03-01 | Fujifilm Corp | 配備黑矩陣之濾光片及液晶顯示器 |
US7417746B2 (en) | 2005-12-29 | 2008-08-26 | Xerox Corporation | Fabry-perot tunable filter systems and methods |
US7652814B2 (en) | 2006-01-27 | 2010-01-26 | Qualcomm Mems Technologies, Inc. | MEMS device with integrated optical element |
US7603001B2 (en) | 2006-02-17 | 2009-10-13 | Qualcomm Mems Technologies, Inc. | Method and apparatus for providing back-lighting in an interferometric modulator display device |
US7550810B2 (en) | 2006-02-23 | 2009-06-23 | Qualcomm Mems Technologies, Inc. | MEMS device having a layer movable at asymmetric rates |
US7450295B2 (en) * | 2006-03-02 | 2008-11-11 | Qualcomm Mems Technologies, Inc. | Methods for producing MEMS with protective coatings using multi-component sacrificial layers |
JP2007266095A (ja) | 2006-03-27 | 2007-10-11 | Mitsubishi Heavy Ind Ltd | 光電変換セル、光電変換モジュール、光電変換パネルおよび光電変換システム |
JP5051123B2 (ja) | 2006-03-28 | 2012-10-17 | 富士通株式会社 | 可動素子 |
US7477440B1 (en) | 2006-04-06 | 2009-01-13 | Miradia Inc. | Reflective spatial light modulator having dual layer electrodes and method of fabricating same |
US7643203B2 (en) * | 2006-04-10 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Interferometric optical display system with broadband characteristics |
US20070235072A1 (en) | 2006-04-10 | 2007-10-11 | Peter Bermel | Solar cell efficiencies through periodicity |
US8004743B2 (en) | 2006-04-21 | 2011-08-23 | Qualcomm Mems Technologies, Inc. | Method and apparatus for providing brightness control in an interferometric modulator (IMOD) display |
US7649671B2 (en) | 2006-06-01 | 2010-01-19 | Qualcomm Mems Technologies, Inc. | Analog interferometric modulator device with electrostatic actuation and release |
US7321457B2 (en) | 2006-06-01 | 2008-01-22 | Qualcomm Incorporated | Process and structure for fabrication of MEMS device having isolated edge posts |
JP2007334132A (ja) | 2006-06-16 | 2007-12-27 | Kanagawa Acad Of Sci & Technol | アクチュエータ及びそれを用いた記憶装置 |
US7385744B2 (en) | 2006-06-28 | 2008-06-10 | Qualcomm Mems Technologies, Inc. | Support structure for free-standing MEMS device and methods for forming the same |
US7835061B2 (en) | 2006-06-28 | 2010-11-16 | Qualcomm Mems Technologies, Inc. | Support structures for free-standing electromechanical devices |
US7527998B2 (en) | 2006-06-30 | 2009-05-05 | Qualcomm Mems Technologies, Inc. | Method of manufacturing MEMS devices providing air gap control |
US7593189B2 (en) | 2006-06-30 | 2009-09-22 | Seagate Technology Llc | Head gimbal assembly to reduce slider distortion due to thermal stress |
US8029628B2 (en) | 2006-07-25 | 2011-10-04 | Tanaka Kikinzoku Kogyo K.K. | Noble metal alloy for spark plug and method for producing and processing the same |
US7566664B2 (en) | 2006-08-02 | 2009-07-28 | Qualcomm Mems Technologies, Inc. | Selective etching of MEMS using gaseous halides and reactive co-etchants |
TWI331231B (en) | 2006-08-04 | 2010-10-01 | Au Optronics Corp | Color filter and frbricating method thereof |
DE102006039071B4 (de) | 2006-08-09 | 2012-04-19 | Universität Kassel | Optisches Filter und Verfahren zu seiner Herstellung |
JP4765837B2 (ja) | 2006-08-23 | 2011-09-07 | ソニー株式会社 | バックライト装置及び液晶表示装置 |
US7629197B2 (en) | 2006-10-18 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Spatial light modulator |
US20080105298A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
WO2008062363A2 (en) | 2006-11-22 | 2008-05-29 | Koninklijke Philips Electronics N.V. | Illumination system and display device |
US20080121270A1 (en) | 2006-11-28 | 2008-05-29 | General Electric Company | Photovoltaic roof tile system |
US7535621B2 (en) | 2006-12-27 | 2009-05-19 | Qualcomm Mems Technologies, Inc. | Aluminum fluoride films for microelectromechanical system applications |
US7403180B1 (en) | 2007-01-29 | 2008-07-22 | Qualcomm Mems Technologies, Inc. | Hybrid color synthesis for multistate reflective modulator displays |
US8115987B2 (en) | 2007-02-01 | 2012-02-14 | Qualcomm Mems Technologies, Inc. | Modulating the intensity of light from an interferometric reflector |
US7916378B2 (en) | 2007-03-08 | 2011-03-29 | Qualcomm Mems Technologies, Inc. | Method and apparatus for providing a light absorbing mask in an interferometric modulator display |
US7742220B2 (en) | 2007-03-28 | 2010-06-22 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device and method utilizing conducting layers separated by stops |
TWI335085B (en) * | 2007-04-19 | 2010-12-21 | Ind Tech Res Inst | Bifacial thin film solar cell and method for fabricating the same |
US7643202B2 (en) | 2007-05-09 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | Microelectromechanical system having a dielectric movable membrane and a mirror |
US7715085B2 (en) | 2007-05-09 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | Electromechanical system having a dielectric movable membrane and a mirror |
US7719752B2 (en) | 2007-05-11 | 2010-05-18 | Qualcomm Mems Technologies, Inc. | MEMS structures, methods of fabricating MEMS components on separate substrates and assembly of same |
US7643199B2 (en) | 2007-06-19 | 2010-01-05 | Qualcomm Mems Technologies, Inc. | High aperture-ratio top-reflective AM-iMod displays |
US7782517B2 (en) | 2007-06-21 | 2010-08-24 | Qualcomm Mems Technologies, Inc. | Infrared and dual mode displays |
US7569488B2 (en) | 2007-06-22 | 2009-08-04 | Qualcomm Mems Technologies, Inc. | Methods of making a MEMS device by monitoring a process parameter |
US7630121B2 (en) | 2007-07-02 | 2009-12-08 | Qualcomm Mems Technologies, Inc. | Electromechanical device with optical function separated from mechanical and electrical function |
US7595926B2 (en) * | 2007-07-05 | 2009-09-29 | Qualcomm Mems Technologies, Inc. | Integrated IMODS and solar cells on a substrate |
KR20100066452A (ko) | 2007-07-31 | 2010-06-17 | 퀄컴 엠이엠스 테크놀로지스, 인크. | 간섭계 변조기의 색 변이를 증강시키는 장치 |
US7773286B2 (en) | 2007-09-14 | 2010-08-10 | Qualcomm Mems Technologies, Inc. | Periodic dimple array |
US7847999B2 (en) | 2007-09-14 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Interferometric modulator display devices |
US7848003B2 (en) | 2007-09-17 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Semi-transparent/transflective lighted interferometric devices |
US20090078316A1 (en) | 2007-09-24 | 2009-03-26 | Qualcomm Incorporated | Interferometric photovoltaic cell |
EP2210280A2 (en) | 2007-10-19 | 2010-07-28 | QUALCOMM MEMS Technologies, Inc. | Display with integrated photovoltaic device |
US8058549B2 (en) * | 2007-10-19 | 2011-11-15 | Qualcomm Mems Technologies, Inc. | Photovoltaic devices with integrated color interferometric film stacks |
CN101842875A (zh) | 2007-11-02 | 2010-09-22 | 应用材料股份有限公司 | 在沉积处理间实施的等离子处理 |
US20090293955A1 (en) | 2007-11-07 | 2009-12-03 | Qualcomm Incorporated | Photovoltaics with interferometric masks |
US20090126792A1 (en) | 2007-11-16 | 2009-05-21 | Qualcomm Incorporated | Thin film solar concentrator/collector |
US8941631B2 (en) | 2007-11-16 | 2015-01-27 | Qualcomm Mems Technologies, Inc. | Simultaneous light collection and illumination on an active display |
US7715079B2 (en) | 2007-12-07 | 2010-05-11 | Qualcomm Mems Technologies, Inc. | MEMS devices requiring no mechanical support |
EP2232569A2 (en) | 2007-12-17 | 2010-09-29 | QUALCOMM MEMS Technologies, Inc. | Photovoltaics with interferometric back side masks |
WO2009085601A2 (en) * | 2007-12-21 | 2009-07-09 | Qualcom Mems Technologies, Inc. | Multijunction photovoltaic cells |
KR20100114125A (ko) | 2008-02-12 | 2010-10-22 | 퀄컴 엠이엠스 테크놀로지스, 인크. | 이중층 박막 홀로그래픽 태양광 집중장치/집광장치 |
US20090229664A1 (en) | 2008-03-17 | 2009-09-17 | Nanopv Technologies Inc. | Method of manufacturing nanocrystalline photovoltaic devices |
US7612933B2 (en) | 2008-03-27 | 2009-11-03 | Qualcomm Mems Technologies, Inc. | Microelectromechanical device with spacing layer |
US7898723B2 (en) * | 2008-04-02 | 2011-03-01 | Qualcomm Mems Technologies, Inc. | Microelectromechanical systems display element with photovoltaic structure |
US7969638B2 (en) | 2008-04-10 | 2011-06-28 | Qualcomm Mems Technologies, Inc. | Device having thin black mask and method of fabricating the same |
EP2279530B1 (en) | 2008-04-11 | 2013-06-26 | QUALCOMM MEMS Technologies, Inc. | Method for improving pv aesthetics and efficiency |
TWI381536B (zh) | 2008-08-29 | 2013-01-01 | Univ Nat Taiwan | 微奈米結構pn二極體陣列薄膜太陽能電池及其製作方法 |
US20100051089A1 (en) | 2008-09-02 | 2010-03-04 | Qualcomm Mems Technologies, Inc. | Light collection device with prismatic light turning features |
US20100059097A1 (en) | 2008-09-08 | 2010-03-11 | Mcdonald Mark | Bifacial multijunction solar cell |
EP2340567A2 (en) | 2008-09-18 | 2011-07-06 | QUALCOMM MEMS Technologies, Inc. | Increasing the angular range of light collection in solar collectors/concentrators |
US20100096011A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | High efficiency interferometric color filters for photovoltaic modules |
WO2010044901A1 (en) * | 2008-10-16 | 2010-04-22 | Qualcomm Mems Technologies, Inc. | Monolithic imod color enhanced photovoltaic cell |
-
2008
- 2008-10-16 EP EP20080838887 patent/EP2210280A2/en not_active Withdrawn
- 2008-10-16 KR KR1020107010743A patent/KR20100090262A/ko not_active Application Discontinuation
- 2008-10-16 CN CN2008801122193A patent/CN101828145B/zh not_active Expired - Fee Related
- 2008-10-16 JP JP2010530123A patent/JP5302322B2/ja not_active Expired - Fee Related
- 2008-10-16 WO PCT/US2008/080225 patent/WO2009052326A2/en active Application Filing
- 2008-10-16 KR KR1020107010599A patent/KR20100090257A/ko not_active Application Discontinuation
- 2008-10-16 CN CN2008801122206A patent/CN101828146B/zh not_active Expired - Fee Related
- 2008-10-16 WO PCT/US2008/080222 patent/WO2009052324A2/en active Application Filing
- 2008-10-16 EP EP08838795A patent/EP2212926A2/en not_active Withdrawn
- 2008-10-16 JP JP2010530122A patent/JP5209727B2/ja not_active Expired - Fee Related
- 2008-10-20 US US12/254,766 patent/US8130440B2/en not_active Expired - Fee Related
- 2008-10-20 US US12/254,782 patent/US8169686B2/en not_active Expired - Fee Related
-
2010
- 2010-07-23 US US12/842,845 patent/US8797628B2/en not_active Expired - Fee Related
-
2012
- 2012-04-11 US US13/444,474 patent/US20120194896A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4190323B2 (ja) * | 2003-03-24 | 2008-12-03 | 旭化成ホームズ株式会社 | 土間の気密構造及び土間の気密構造形成方法 |
CN101006490A (zh) * | 2004-08-27 | 2007-07-25 | Idc公司 | 电流模式显示器驱动电路实现特征 |
Also Published As
Publication number | Publication date |
---|---|
WO2009052324A3 (en) | 2009-08-06 |
US20100284055A1 (en) | 2010-11-11 |
KR20100090262A (ko) | 2010-08-13 |
US8130440B2 (en) | 2012-03-06 |
JP5209727B2 (ja) | 2013-06-12 |
US20120194896A1 (en) | 2012-08-02 |
EP2212926A2 (en) | 2010-08-04 |
JP2011504600A (ja) | 2011-02-10 |
KR20100090257A (ko) | 2010-08-13 |
JP2011508244A (ja) | 2011-03-10 |
WO2009052326A2 (en) | 2009-04-23 |
JP5302322B2 (ja) | 2013-10-02 |
CN101828146B (zh) | 2013-05-01 |
EP2210280A2 (en) | 2010-07-28 |
WO2009052324A2 (en) | 2009-04-23 |
CN101828145A (zh) | 2010-09-08 |
WO2009052326A3 (en) | 2009-08-06 |
CN101828146A (zh) | 2010-09-08 |
US8169686B2 (en) | 2012-05-01 |
US8797628B2 (en) | 2014-08-05 |
US20090103165A1 (en) | 2009-04-23 |
US20090103161A1 (en) | 2009-04-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101828145B (zh) | 具有集成光伏元件的显示器 | |
CN101952763B (zh) | 具有电力产生黑色掩模的装置及其制造方法 | |
US7898723B2 (en) | Microelectromechanical systems display element with photovoltaic structure | |
JP3207182B2 (ja) | 透明電極 | |
JP5160662B2 (ja) | ディスプレイと光電エレメントとを統合したディスプレイデバイス、およびその製造方法 | |
CN101981485A (zh) | 双模式显示器的设备及方法 | |
US20100079711A1 (en) | Liquid crystal display device equipped with a photovoltaic conversion function | |
CN101755232A (zh) | 微机电***显示器装置及其制造方法 | |
TWI518365B (zh) | 顯示裝置及製造干涉式光吸收結構之方法 | |
CN101473255A (zh) | 线性固态照明器 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161021 Address after: American California Patentee after: NUJIRA LTD. Address before: American California Patentee before: Qualcomm MEMS Technology Corp. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120321 Termination date: 20181016 |