CN101449347B - 具有单晶硅电极的电容性微机电传感器 - Google Patents
具有单晶硅电极的电容性微机电传感器 Download PDFInfo
- Publication number
- CN101449347B CN101449347B CN2007800178712A CN200780017871A CN101449347B CN 101449347 B CN101449347 B CN 101449347B CN 2007800178712 A CN2007800178712 A CN 2007800178712A CN 200780017871 A CN200780017871 A CN 200780017871A CN 101449347 B CN101449347 B CN 101449347B
- Authority
- CN
- China
- Prior art keywords
- layer
- monocrystalline silicon
- electro
- ground floor
- mechanical sensors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
- G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
- B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0831—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type having the pivot axis between the longitudinal ends of the mass, e.g. see-saw configuration
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
- Gyroscopes (AREA)
Abstract
Description
Claims (6)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US79179006P | 2006-04-13 | 2006-04-13 | |
US60/791,790 | 2006-04-13 | ||
US11/707,347 US7539003B2 (en) | 2005-12-01 | 2007-02-16 | Capacitive micro-electro-mechanical sensors with single crystal silicon electrodes |
US11/707,347 | 2007-02-16 | ||
PCT/US2007/008599 WO2007120576A2 (en) | 2006-04-13 | 2007-04-04 | Capacitive micro- electro-mechanical sensors with single crystal silicon electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101449347A CN101449347A (zh) | 2009-06-03 |
CN101449347B true CN101449347B (zh) | 2013-07-17 |
Family
ID=38610099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800178712A Active CN101449347B (zh) | 2006-04-13 | 2007-04-04 | 具有单晶硅电极的电容性微机电传感器 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7539003B2 (zh) |
EP (1) | EP2011132B1 (zh) |
JP (3) | JP5331678B2 (zh) |
CN (1) | CN101449347B (zh) |
WO (1) | WO2007120576A2 (zh) |
Families Citing this family (52)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7741964B2 (en) * | 2007-05-31 | 2010-06-22 | Schrader Electronics Ltd. | Tire pressure detector having reduced power consumption mechanism |
JP5260155B2 (ja) * | 2008-06-16 | 2013-08-14 | 株式会社堀場エステック | 静電容量型圧力センサ及びその製造方法 |
US8238073B2 (en) * | 2008-07-18 | 2012-08-07 | Synaptics, Inc. | In-molded capacitive sensors |
US8499629B2 (en) * | 2008-10-10 | 2013-08-06 | Honeywell International Inc. | Mounting system for torsional suspension of a MEMS device |
ITBO20080079U1 (it) * | 2008-10-30 | 2010-04-30 | Lorenzo Peretto | Sistema costruttivo per un sensore capacitivo. |
US8739626B2 (en) * | 2009-08-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Micromachined inertial sensor devices |
US8421168B2 (en) * | 2009-11-17 | 2013-04-16 | Fairchild Semiconductor Corporation | Microelectromechanical systems microphone packaging systems |
US8490495B2 (en) | 2010-05-05 | 2013-07-23 | Consensic, Inc. | Capacitive pressure sensor with vertical electrical feedthroughs and method to make the same |
US9455354B2 (en) | 2010-09-18 | 2016-09-27 | Fairchild Semiconductor Corporation | Micromachined 3-axis accelerometer with a single proof-mass |
KR101443730B1 (ko) | 2010-09-18 | 2014-09-23 | 페어차일드 세미컨덕터 코포레이션 | 미세기계화 다이, 및 직교 오차가 작은 서스펜션을 제조하는 방법 |
EP2616389B1 (en) | 2010-09-18 | 2017-04-05 | Fairchild Semiconductor Corporation | Multi-die mems package |
US9278846B2 (en) | 2010-09-18 | 2016-03-08 | Fairchild Semiconductor Corporation | Micromachined monolithic 6-axis inertial sensor |
US8813564B2 (en) | 2010-09-18 | 2014-08-26 | Fairchild Semiconductor Corporation | MEMS multi-axis gyroscope with central suspension and gimbal structure |
CN103221331B (zh) | 2010-09-18 | 2016-02-03 | 快捷半导体公司 | 用于微机电***的密封封装 |
EP2619130A4 (en) | 2010-09-20 | 2014-12-10 | Fairchild Semiconductor | SILICONE CONTINUITY WITH REDUCED CROSS-CAPACITY |
US10065851B2 (en) | 2010-09-20 | 2018-09-04 | Fairchild Semiconductor Corporation | Microelectromechanical pressure sensor including reference capacitor |
JP5649474B2 (ja) * | 2011-01-26 | 2015-01-07 | ローム株式会社 | 静電容量型圧力センサおよび静電容量型圧力センサの製造方法 |
US8673756B2 (en) * | 2011-04-14 | 2014-03-18 | Robert Bosch Gmbh | Out-of-plane spacer defined electrode |
CN103733304B (zh) * | 2011-06-29 | 2016-08-17 | 因文森斯公司 | 其中一部分暴露在环境下并且带有竖直集成电子器件的气密封mems设备 |
US9062972B2 (en) | 2012-01-31 | 2015-06-23 | Fairchild Semiconductor Corporation | MEMS multi-axis accelerometer electrode structure |
US8978475B2 (en) | 2012-02-01 | 2015-03-17 | Fairchild Semiconductor Corporation | MEMS proof mass with split z-axis portions |
US8714021B2 (en) | 2012-02-27 | 2014-05-06 | Amphenol Thermometrics, Inc. | Catheter die and method of fabricating the same |
US8857264B2 (en) | 2012-03-30 | 2014-10-14 | Amphenol Thermometrics, Inc. | Catheter die |
US8754694B2 (en) | 2012-04-03 | 2014-06-17 | Fairchild Semiconductor Corporation | Accurate ninety-degree phase shifter |
US8742964B2 (en) | 2012-04-04 | 2014-06-03 | Fairchild Semiconductor Corporation | Noise reduction method with chopping for a merged MEMS accelerometer sensor |
US9488693B2 (en) | 2012-04-04 | 2016-11-08 | Fairchild Semiconductor Corporation | Self test of MEMS accelerometer with ASICS integrated capacitors |
EP2647952B1 (en) | 2012-04-05 | 2017-11-15 | Fairchild Semiconductor Corporation | Mems device automatic-gain control loop for mechanical amplitude drive |
EP2647955B8 (en) | 2012-04-05 | 2018-12-19 | Fairchild Semiconductor Corporation | MEMS device quadrature phase shift cancellation |
EP2648334B1 (en) | 2012-04-05 | 2020-06-10 | Fairchild Semiconductor Corporation | Mems device front-end charge amplifier |
US9069006B2 (en) | 2012-04-05 | 2015-06-30 | Fairchild Semiconductor Corporation | Self test of MEMS gyroscope with ASICs integrated capacitors |
US9094027B2 (en) | 2012-04-12 | 2015-07-28 | Fairchild Semiconductor Corporation | Micro-electro-mechanical-system (MEMS) driver |
US9625272B2 (en) | 2012-04-12 | 2017-04-18 | Fairchild Semiconductor Corporation | MEMS quadrature cancellation and signal demodulation |
DE102013014881B4 (de) | 2012-09-12 | 2023-05-04 | Fairchild Semiconductor Corporation | Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien |
EP2725334B1 (en) * | 2012-10-25 | 2020-04-15 | Invensense, Inc. | A pressure sensor having a membrane and a method for fabricating the same |
US9156676B2 (en) * | 2013-04-09 | 2015-10-13 | Honeywell International Inc. | Sensor with isolated diaphragm |
US9837935B2 (en) | 2013-10-29 | 2017-12-05 | Honeywell International Inc. | All-silicon electrode capacitive transducer on a glass substrate |
EP2871455B1 (en) | 2013-11-06 | 2020-03-04 | Invensense, Inc. | Pressure sensor |
EP2871456B1 (en) * | 2013-11-06 | 2018-10-10 | Invensense, Inc. | Pressure sensor and method for manufacturing a pressure sensor |
US9464950B2 (en) * | 2013-11-15 | 2016-10-11 | Rosemount Aerospace Inc. | Capacitive pressure sensors for high temperature applications |
CN103552980A (zh) * | 2013-11-15 | 2014-02-05 | 安徽北方芯动联科微***技术有限公司 | Mems芯片圆片级封装方法及其单片超小型mems芯片 |
NO2777050T3 (zh) * | 2014-02-25 | 2018-06-16 | ||
FI126599B (en) | 2014-02-26 | 2017-03-15 | Murata Manufacturing Co | Microelectromechanical frame structure |
CN105084296B (zh) * | 2014-04-25 | 2017-02-08 | 无锡华润上华半导体有限公司 | Mems电容式压力传感器的制作方法 |
EP3076146B1 (en) | 2015-04-02 | 2020-05-06 | Invensense, Inc. | Pressure sensor |
US10697994B2 (en) | 2017-02-22 | 2020-06-30 | Semiconductor Components Industries, Llc | Accelerometer techniques to compensate package stress |
KR101988469B1 (ko) * | 2017-07-26 | 2019-06-13 | 주식회사 신성씨앤티 | 멤스 센서 및 그 제조 방법 |
CN108051134A (zh) * | 2017-11-23 | 2018-05-18 | 胡波 | 闭环工作方式的电容式压力传感器 |
CN108680138A (zh) * | 2018-05-09 | 2018-10-19 | 中交第公路勘察设计研究院有限公司 | 软土地基路基大变形沉降自动监测***及其方法 |
DE102018119943A1 (de) * | 2018-08-16 | 2020-02-20 | Endress+Hauser SE+Co. KG | Drucksensor |
US11225409B2 (en) | 2018-09-17 | 2022-01-18 | Invensense, Inc. | Sensor with integrated heater |
US11060929B2 (en) * | 2019-03-04 | 2021-07-13 | Silicon Microstructures, Inc. | Pressure sensor die attach |
CN113785178A (zh) * | 2019-05-17 | 2021-12-10 | 应美盛股份有限公司 | 气密性改进的压力传感器 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4617606A (en) * | 1985-01-31 | 1986-10-14 | Motorola, Inc. | Capacitive pressure transducer |
US4875134A (en) * | 1988-01-18 | 1989-10-17 | Vaisala Oy | Pressure sensor construction and method for its fabrication |
US6212056B1 (en) * | 1999-03-26 | 2001-04-03 | Lucent Technologies Inc. | Micromachined variable capacitor |
CN1570651A (zh) * | 2004-04-29 | 2005-01-26 | 中国科学院上海微***与信息技术研究所 | 一种单硅片体微机械工艺实现的带静电自检测的加速度计 |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61272623A (ja) * | 1985-05-29 | 1986-12-02 | Fuji Electric Co Ltd | 静電容量式圧力センサ |
JPS6259828A (ja) * | 1985-09-11 | 1987-03-16 | Fuji Electric Co Ltd | 静電容量式圧力センサ |
DE4106288C2 (de) * | 1991-02-28 | 2001-05-31 | Bosch Gmbh Robert | Sensor zur Messung von Drücken oder Beschleunigungen |
JPH06323939A (ja) * | 1993-05-17 | 1994-11-25 | Omron Corp | 静電容量式センサ |
US5511428A (en) | 1994-06-10 | 1996-04-30 | Massachusetts Institute Of Technology | Backside contact of sensor microstructures |
FR2722878B1 (fr) * | 1994-07-22 | 1996-09-06 | Suisse Electronique Microtech | Capteur de pression differentielle de type capacitif |
JPH08122251A (ja) * | 1994-10-19 | 1996-05-17 | Mitsubishi Materials Corp | 赤外線式ガス分析装置 |
JP3588286B2 (ja) | 1999-10-06 | 2004-11-10 | 株式会社山武 | 容量式圧力センサ |
US6396677B1 (en) * | 2000-05-17 | 2002-05-28 | Xerox Corporation | Photolithographically-patterned variable capacitor structures and method of making |
JP3629185B2 (ja) * | 2000-06-15 | 2005-03-16 | 株式会社日立製作所 | 半導体センサ及びその製造方法 |
US6507475B1 (en) * | 2000-06-27 | 2003-01-14 | Motorola, Inc. | Capacitive device and method of manufacture |
US6377438B1 (en) * | 2000-10-23 | 2002-04-23 | Mcnc | Hybrid microelectromechanical system tunable capacitor and associated fabrication methods |
JP2002228678A (ja) * | 2001-02-02 | 2002-08-14 | Denso Corp | 半導体力学量センサとその製造方法 |
US20020167072A1 (en) | 2001-03-16 | 2002-11-14 | Andosca Robert George | Electrostatically actuated micro-electro-mechanical devices and method of manufacture |
JP2002328137A (ja) * | 2001-04-27 | 2002-11-15 | Matsushita Electric Works Ltd | 加速度センサ及びその製造方法 |
US6815739B2 (en) * | 2001-05-18 | 2004-11-09 | Corporation For National Research Initiatives | Radio frequency microelectromechanical systems (MEMS) devices on low-temperature co-fired ceramic (LTCC) substrates |
US6909589B2 (en) * | 2002-11-20 | 2005-06-21 | Corporation For National Research Initiatives | MEMS-based variable capacitor |
JP4159895B2 (ja) | 2003-02-17 | 2008-10-01 | キヤノンアネルバ株式会社 | 静電容量型圧力センサ及びその製造方法 |
US6928879B2 (en) * | 2003-02-26 | 2005-08-16 | Robert Bosch Gmbh | Episeal pressure sensor and method for making an episeal pressure sensor |
SE526366C3 (sv) * | 2003-03-21 | 2005-10-26 | Silex Microsystems Ab | Elektriska anslutningar i substrat |
JP2004356708A (ja) * | 2003-05-27 | 2004-12-16 | Hosiden Corp | 音響検出機構及びその製造方法 |
US6930368B2 (en) | 2003-07-31 | 2005-08-16 | Hewlett-Packard Development Company, L.P. | MEMS having a three-wafer structure |
US7111518B1 (en) | 2003-09-19 | 2006-09-26 | Silicon Microstructures, Inc. | Extremely low cost pressure sensor realized using deep reactive ion etching |
US20050172717A1 (en) | 2004-02-06 | 2005-08-11 | General Electric Company | Micromechanical device with thinned cantilever structure and related methods |
JP2005233877A (ja) | 2004-02-23 | 2005-09-02 | Alps Electric Co Ltd | 圧力センサ |
US7272954B2 (en) * | 2004-07-14 | 2007-09-25 | L'air Liquide, Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'exploitation Des Proceded Georges Claude | Low temperature air separation process for producing pressurized gaseous product |
-
2007
- 2007-02-16 US US11/707,347 patent/US7539003B2/en active Active
- 2007-04-04 EP EP07755013.5A patent/EP2011132B1/en active Active
- 2007-04-04 CN CN2007800178712A patent/CN101449347B/zh active Active
- 2007-04-04 JP JP2009505402A patent/JP5331678B2/ja active Active
- 2007-04-04 WO PCT/US2007/008599 patent/WO2007120576A2/en active Application Filing
-
2013
- 2013-04-26 JP JP2013093834A patent/JP5806254B2/ja active Active
-
2015
- 2015-05-07 JP JP2015095070A patent/JP5956644B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4617606A (en) * | 1985-01-31 | 1986-10-14 | Motorola, Inc. | Capacitive pressure transducer |
US4875134A (en) * | 1988-01-18 | 1989-10-17 | Vaisala Oy | Pressure sensor construction and method for its fabrication |
US6212056B1 (en) * | 1999-03-26 | 2001-04-03 | Lucent Technologies Inc. | Micromachined variable capacitor |
CN1570651A (zh) * | 2004-04-29 | 2005-01-26 | 中国科学院上海微***与信息技术研究所 | 一种单硅片体微机械工艺实现的带静电自检测的加速度计 |
Also Published As
Publication number | Publication date |
---|---|
EP2011132B1 (en) | 2016-06-29 |
JP5331678B2 (ja) | 2013-10-30 |
WO2007120576A3 (en) | 2008-10-30 |
WO2007120576A2 (en) | 2007-10-25 |
EP2011132A4 (en) | 2014-07-16 |
EP2011132A2 (en) | 2009-01-07 |
US7539003B2 (en) | 2009-05-26 |
JP2015180521A (ja) | 2015-10-15 |
JP2009533866A (ja) | 2009-09-17 |
US20070279832A1 (en) | 2007-12-06 |
CN101449347A (zh) | 2009-06-03 |
JP5806254B2 (ja) | 2015-11-10 |
JP5956644B2 (ja) | 2016-07-27 |
JP2013198979A (ja) | 2013-10-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101449347B (zh) | 具有单晶硅电极的电容性微机电传感器 | |
US9802814B2 (en) | Through silicon via including multi-material fill | |
US7247246B2 (en) | Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity | |
US7104129B2 (en) | Vertically integrated MEMS structure with electronics in a hermetically sealed cavity | |
US8710599B2 (en) | Micromachined devices and fabricating the same | |
CN102572662B (zh) | 微机械加工的麦克风和多传感器及其制造方法 | |
US10065851B2 (en) | Microelectromechanical pressure sensor including reference capacitor | |
US7943525B2 (en) | Method of producing microelectromechanical device with isolated microstructures | |
US20150318190A1 (en) | BAW Gyroscope with Bottom Electrode | |
US9908771B2 (en) | Inertial and pressure sensors on single chip | |
TW201604121A (zh) | 微電機構件以及製造微電機構件的方法 | |
US20040065638A1 (en) | Method of forming a sensor for detecting motion | |
JP2012127692A (ja) | Memsセンサおよびその製造方法、ならびにmemsパッケージ | |
CN115513365A (zh) | 一种基于fbar的压力传感器及其制备方法 | |
JP3725078B2 (ja) | 半導体力学量センサの製造方法 | |
JP2002181551A (ja) | 半導体力学量センサ | |
JPH10267659A (ja) | 角速度センサ及びその製造方法 | |
JP2011095007A (ja) | 静電容量型加速度センサ | |
JP2004245844A (ja) | 半導体力学量センサ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SENSOR LICENSING CO., LTD. Free format text: FORMER OWNER: START-UP LOAN + LEASE IV CORP. Effective date: 20130106 Owner name: START-UP LOAN + LEASE IV CORP. Free format text: FORMER OWNER: LV SENSORS INC. Effective date: 20130106 Owner name: SAMSUNG ELECTRONICS CO., LTD. Free format text: FORMER OWNER: SENSOR LICENSING CO., LTD. Effective date: 20130106 Owner name: START-UP LOAN + LEASE V CORP. Effective date: 20130106 Free format text: FORMER OWNER: START-UP LOAN + LEASE V CORP. Effective date: 20130106 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20130106 Address after: Gyeonggi Do, South Korea Applicant after: SAMSUNG ELECTRONICS Co.,Ltd. Address before: California, USA Applicant before: Sensor licensing Ltd. Effective date of registration: 20130106 Address after: California, USA Applicant after: Sensor licensing Ltd. Address before: American Maryland Applicant before: Venture capital and leasing IV Co. Applicant before: Venture capital and leasing V Co. Effective date of registration: 20130106 Address after: American Maryland Applicant after: Venture capital and leasing IV Co. Applicant after: Venture capital and leasing V Co. Address before: California, USA Applicant before: LV SENSORS, Inc. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant |