CN101409290A - 非易失性存储装置及其操作方法和制造方法 - Google Patents
非易失性存储装置及其操作方法和制造方法 Download PDFInfo
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- CN101409290A CN101409290A CNA2008101449440A CN200810144944A CN101409290A CN 101409290 A CN101409290 A CN 101409290A CN A2008101449440 A CNA2008101449440 A CN A2008101449440A CN 200810144944 A CN200810144944 A CN 200810144944A CN 101409290 A CN101409290 A CN 101409290A
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
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Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070103164 | 2007-10-12 | ||
KR1020070103164A KR20090037690A (ko) | 2007-10-12 | 2007-10-12 | 비휘발성 메모리 소자, 그 동작 방법 및 그 제조 방법 |
Publications (1)
Publication Number | Publication Date |
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CN101409290A true CN101409290A (zh) | 2009-04-15 |
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ID=40260656
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2008101449440A Pending CN101409290A (zh) | 2007-10-12 | 2008-08-13 | 非易失性存储装置及其操作方法和制造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7729164B2 (ko) |
EP (1) | EP2048709A3 (ko) |
JP (1) | JP2009099948A (ko) |
KR (1) | KR20090037690A (ko) |
CN (1) | CN101409290A (ko) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102088019A (zh) * | 2009-10-14 | 2011-06-08 | 旺宏电子股份有限公司 | 具有内联机结构的三维叠层元件及其制造方法 |
CN102768858A (zh) * | 2011-05-04 | 2012-11-07 | 旺宏电子股份有限公司 | 一种记忆体 |
CN103038882A (zh) * | 2010-06-28 | 2013-04-10 | 美光科技公司 | 三维存储器及形成所述三维存储器的方法 |
CN104662659A (zh) * | 2012-08-31 | 2015-05-27 | 美光科技公司 | 三维存储器阵列架构 |
US10586802B2 (en) | 2011-02-25 | 2020-03-10 | Micron Technology, Inc. | Charge storage apparatus and methods |
Families Citing this family (117)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100890016B1 (ko) * | 2007-05-10 | 2009-03-25 | 삼성전자주식회사 | 비휘발성 메모리 장치, 그것을 포함하는 메모리 시스템 및그것의 프로그램 방법 |
US7906818B2 (en) * | 2008-03-13 | 2011-03-15 | Micron Technology, Inc. | Memory array with a pair of memory-cell strings to a single conductive pillar |
US7867831B2 (en) | 2008-05-28 | 2011-01-11 | Hynix Semiconductor Inc. | Manufacturing method of flash memory device comprising gate columns penetrating through a cell stack |
KR101052921B1 (ko) * | 2008-07-07 | 2011-07-29 | 주식회사 하이닉스반도체 | 버티컬 플로팅 게이트를 구비하는 플래시 메모리소자의제조방법 |
KR20100083566A (ko) * | 2009-01-14 | 2010-07-22 | 삼성전자주식회사 | 적층 구조의 비휘발성 메모리 소자, 메모리 카드 및 전자 시스템 |
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EP2048709A3 (en) | 2010-09-29 |
EP2048709A2 (en) | 2009-04-15 |
US20090097321A1 (en) | 2009-04-16 |
US7729164B2 (en) | 2010-06-01 |
KR20090037690A (ko) | 2009-04-16 |
JP2009099948A (ja) | 2009-05-07 |
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