CN101382712A - 液晶显示装置阵列基板的制造方法 - Google Patents
液晶显示装置阵列基板的制造方法 Download PDFInfo
- Publication number
- CN101382712A CN101382712A CNA2007101215299A CN200710121529A CN101382712A CN 101382712 A CN101382712 A CN 101382712A CN A2007101215299 A CNA2007101215299 A CN A2007101215299A CN 200710121529 A CN200710121529 A CN 200710121529A CN 101382712 A CN101382712 A CN 101382712A
- Authority
- CN
- China
- Prior art keywords
- electrode
- engineering
- layer
- amorphous silicon
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 44
- 239000002184 metal Substances 0.000 claims abstract description 36
- 229910052751 metal Inorganic materials 0.000 claims abstract description 36
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims description 125
- 238000009413 insulation Methods 0.000 claims description 25
- 238000005516 engineering process Methods 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 17
- 230000005540 biological transmission Effects 0.000 claims description 14
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 229910004205 SiNX Inorganic materials 0.000 claims description 12
- 229910020286 SiOxNy Inorganic materials 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 12
- 239000002131 composite material Substances 0.000 claims description 10
- 239000002356 single layer Substances 0.000 claims description 10
- 229910016048 MoW Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- -1 perhaps be AlNd Inorganic materials 0.000 claims description 2
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 34
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 10
- 230000000873 masking effect Effects 0.000 abstract 3
- 238000010586 diagram Methods 0.000 description 16
- 238000000151 deposition Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 238000010276 construction Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 2
- 240000001439 Opuntia Species 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007101215299A CN101382712B (zh) | 2007-09-07 | 2007-09-07 | 液晶显示装置阵列基板的制造方法 |
US12/127,996 US8003451B2 (en) | 2007-09-07 | 2008-05-28 | Method of manufacturing array substrate of liquid crystal display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2007101215299A CN101382712B (zh) | 2007-09-07 | 2007-09-07 | 液晶显示装置阵列基板的制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101382712A true CN101382712A (zh) | 2009-03-11 |
CN101382712B CN101382712B (zh) | 2010-12-08 |
Family
ID=40432302
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007101215299A Expired - Fee Related CN101382712B (zh) | 2007-09-07 | 2007-09-07 | 液晶显示装置阵列基板的制造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US8003451B2 (zh) |
CN (1) | CN101382712B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102610564A (zh) * | 2012-02-07 | 2012-07-25 | 深圳市华星光电技术有限公司 | Tft阵列基板的制作方法 |
CN101957530B (zh) * | 2009-07-17 | 2013-07-24 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
CN107045239A (zh) * | 2017-04-05 | 2017-08-15 | 合肥京东方光电科技有限公司 | 阵列基板及其制作方法、显示面板及显示装置 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103026293B (zh) * | 2010-07-30 | 2016-01-13 | 东友精细化工有限公司 | 用于制造液晶显示装置用阵列基板的方法 |
CN104637806A (zh) * | 2015-03-02 | 2015-05-20 | 京东方科技集团股份有限公司 | 一种刻蚀方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW456048B (en) * | 2000-06-30 | 2001-09-21 | Hannstar Display Corp | Manufacturing method for polysilicon thin film transistor liquid crystal display panel |
KR100499371B1 (ko) * | 2002-04-17 | 2005-07-04 | 엘지.필립스 엘시디 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
KR100566816B1 (ko) * | 2003-11-04 | 2006-04-03 | 엘지.필립스 엘시디 주식회사 | 수평 전계 인가형 박막 트랜지스터 기판 및 그 제조 방법 |
CN100416389C (zh) | 2004-11-29 | 2008-09-03 | 友达光电股份有限公司 | 液晶显示装置及其制造方法 |
KR101127822B1 (ko) * | 2004-12-24 | 2012-03-26 | 엘지디스플레이 주식회사 | 수평 전계 박막 트랜지스터 기판 및 그 제조 방법 |
KR101107245B1 (ko) * | 2004-12-24 | 2012-01-25 | 엘지디스플레이 주식회사 | 수평 전계 박막 트랜지스터 기판 및 그 제조 방법 |
KR101107246B1 (ko) * | 2004-12-24 | 2012-01-25 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 그 제조 방법 |
KR101117979B1 (ko) * | 2004-12-24 | 2012-03-06 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판의 제조 방법 |
KR100966453B1 (ko) * | 2005-12-30 | 2010-06-28 | 엘지디스플레이 주식회사 | 액정표시소자 제조방법 |
KR101238233B1 (ko) * | 2006-06-30 | 2013-03-04 | 엘지디스플레이 주식회사 | 박막트랜지스터와 그 제조방법 |
-
2007
- 2007-09-07 CN CN2007101215299A patent/CN101382712B/zh not_active Expired - Fee Related
-
2008
- 2008-05-28 US US12/127,996 patent/US8003451B2/en not_active Expired - Fee Related
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101957530B (zh) * | 2009-07-17 | 2013-07-24 | 北京京东方光电科技有限公司 | Tft-lcd阵列基板及其制造方法 |
US8553166B2 (en) | 2009-07-17 | 2013-10-08 | Beijing Boe Optoelectronics Technology Co., Ltd. | TFT-LCD array substrate and manufacturing method thereof |
US8797472B2 (en) | 2009-07-17 | 2014-08-05 | Beijing Boe Optoelectronics Technology Co., Ltd. | TFT-LCD array substrate and manufacturing method thereof |
CN102610564A (zh) * | 2012-02-07 | 2012-07-25 | 深圳市华星光电技术有限公司 | Tft阵列基板的制作方法 |
CN102610564B (zh) * | 2012-02-07 | 2014-06-25 | 深圳市华星光电技术有限公司 | Tft阵列基板的制作方法 |
CN107045239A (zh) * | 2017-04-05 | 2017-08-15 | 合肥京东方光电科技有限公司 | 阵列基板及其制作方法、显示面板及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
CN101382712B (zh) | 2010-12-08 |
US20090068801A1 (en) | 2009-03-12 |
US8003451B2 (en) | 2011-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102034750B (zh) | 阵列基板及其制造方法 | |
JP5564464B2 (ja) | Tft−lcdアレー基板及びその製造方法 | |
CN103489877B (zh) | 阵列基板及其制造方法和显示装置 | |
CN102751240B (zh) | 薄膜晶体管阵列基板及其制造方法、显示面板、显示装置 | |
CN101957529B (zh) | Ffs型tft-lcd阵列基板及其制造方法 | |
CN101382712B (zh) | 液晶显示装置阵列基板的制造方法 | |
CN102664194B (zh) | 薄膜晶体管 | |
CN100498481C (zh) | 有源矩阵基片、显示装置及制造有源矩阵基片的方法 | |
CN104658973B (zh) | 阵列基板及其制作方法、显示装置 | |
CN101904014A (zh) | 薄膜型太阳能电池及其制造方法 | |
CN103441100B (zh) | 显示基板及其制造方法、显示装置 | |
CN103219284A (zh) | Tft阵列基板、tft阵列基板的制作方法及显示装置 | |
CN101556935B (zh) | 薄膜晶体管阵列基板制造方法 | |
CN101807586A (zh) | Tft-lcd阵列基板及其制造方法 | |
CN103293797B (zh) | 一种薄膜晶体管液晶显示装置及其制作方法 | |
CN103474433A (zh) | 一种薄膜晶体管阵列基板及其制作方法 | |
CN101373301B (zh) | Ffs型tft-lcd阵列基板结构及其制造方法 | |
CN102054833A (zh) | 薄膜晶体管基板及其制造方法 | |
CN103700663B (zh) | 一种阵列基板及其制作方法、显示装置 | |
CN101236932A (zh) | 薄膜晶体管阵列基板的制造方法 | |
CN203117620U (zh) | Tft阵列基板及显示装置 | |
CN105629598A (zh) | Ffs模式的阵列基板及制作方法 | |
CN108573928A (zh) | 一种tft阵列基板的制备方法及tft阵列基板、显示面板 | |
CN102655117A (zh) | 阵列基板及制造方法、显示装置 | |
CN203480181U (zh) | 阵列基板及显示装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JINGDONGFANG SCIENCE AND TECHNOLOGY GROUP CO., LTD Free format text: FORMER OWNER: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY CO., LTD. Effective date: 20141209 Owner name: BEIJING BOE PHOTOELECTRICITY SCIENCE + TECHNOLOGY Effective date: 20141209 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100176 DAXING, BEIJING TO: 100015 CHAOYANG, BEIJING |
|
TR01 | Transfer of patent right |
Effective date of registration: 20141209 Address after: 100015 Jiuxianqiao Road, Beijing, No. 10, No. Patentee after: BOE Technology Group Co., Ltd. Patentee after: Beijing BOE Photoelectricity Science & Technology Co., Ltd. Address before: 100176 Beijing economic and Technological Development Zone, West Central Road, No. 8 Patentee before: Beijing BOE Photoelectricity Science & Technology Co., Ltd. |
|
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20101208 Termination date: 20200907 |