CN101378012A - 电子部件和显示装置及所述电子部件和显示装置的制造方法 - Google Patents
电子部件和显示装置及所述电子部件和显示装置的制造方法 Download PDFInfo
- Publication number
- CN101378012A CN101378012A CNA2008102151316A CN200810215131A CN101378012A CN 101378012 A CN101378012 A CN 101378012A CN A2008102151316 A CNA2008102151316 A CN A2008102151316A CN 200810215131 A CN200810215131 A CN 200810215131A CN 101378012 A CN101378012 A CN 101378012A
- Authority
- CN
- China
- Prior art keywords
- corrosion
- pattern
- resisting pattern
- resisting
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 238000000034 method Methods 0.000 claims abstract description 234
- 239000000758 substrate Substances 0.000 claims abstract description 217
- 238000005530 etching Methods 0.000 claims abstract description 150
- 239000010408 film Substances 0.000 claims description 341
- 238000010023 transfer printing Methods 0.000 claims description 112
- 239000004065 semiconductor Substances 0.000 claims description 83
- 239000000463 material Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 51
- 239000002184 metal Substances 0.000 claims description 51
- 238000007639 printing Methods 0.000 claims description 47
- 239000012528 membrane Substances 0.000 claims description 36
- 238000012546 transfer Methods 0.000 claims description 32
- 238000007645 offset printing Methods 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 21
- 239000011347 resin Substances 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 20
- 238000004380 ashing Methods 0.000 claims description 17
- 238000012958 reprocessing Methods 0.000 claims description 14
- 239000012670 alkaline solution Substances 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 230000000717 retained effect Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 238000010129 solution processing Methods 0.000 claims description 2
- 238000007493 shaping process Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 85
- 239000002585 base Substances 0.000 description 82
- 239000010410 layer Substances 0.000 description 56
- 238000005516 engineering process Methods 0.000 description 51
- 230000015572 biosynthetic process Effects 0.000 description 40
- 210000004379 membrane Anatomy 0.000 description 34
- 239000000243 solution Substances 0.000 description 31
- 230000008901 benefit Effects 0.000 description 29
- 230000008859 change Effects 0.000 description 29
- 238000010992 reflux Methods 0.000 description 26
- 238000009826 distribution Methods 0.000 description 24
- 206010042674 Swelling Diseases 0.000 description 22
- 230000008961 swelling Effects 0.000 description 22
- 239000011651 chromium Substances 0.000 description 20
- 238000003825 pressing Methods 0.000 description 20
- 239000000654 additive Substances 0.000 description 19
- 230000000996 additive effect Effects 0.000 description 19
- 229920003986 novolac Polymers 0.000 description 19
- 230000002441 reversible effect Effects 0.000 description 18
- 238000013461 design Methods 0.000 description 17
- 238000012545 processing Methods 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 16
- 238000011161 development Methods 0.000 description 16
- 230000018109 developmental process Effects 0.000 description 16
- 239000011521 glass Substances 0.000 description 16
- 238000001459 lithography Methods 0.000 description 16
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 15
- 239000000956 alloy Substances 0.000 description 14
- 238000000926 separation method Methods 0.000 description 14
- 239000004925 Acrylic resin Substances 0.000 description 13
- 229920000178 Acrylic resin Polymers 0.000 description 13
- 239000000126 substance Substances 0.000 description 13
- 239000004567 concrete Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 239000002904 solvent Substances 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 11
- 230000009466 transformation Effects 0.000 description 11
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 9
- 230000007423 decrease Effects 0.000 description 9
- 239000003960 organic solvent Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 230000003321 amplification Effects 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 230000007261 regionalization Effects 0.000 description 7
- 229910000583 Nd alloy Inorganic materials 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 5
- 229910002651 NO3 Inorganic materials 0.000 description 5
- 229910001257 Nb alloy Inorganic materials 0.000 description 5
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 150000001412 amines Chemical class 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 239000008393 encapsulating agent Substances 0.000 description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 3
- 230000000640 hydroxylating effect Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000003595 mist Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910017604 nitric acid Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 241000590419 Polygonia interrogationis Species 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 210000002469 basement membrane Anatomy 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 2
- 230000005764 inhibitory process Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000007781 pre-processing Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000005361 soda-lime glass Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018182 Al—Cu Inorganic materials 0.000 description 1
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- 241001185540 Charissa ambiguata Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010013786 Dry skin Diseases 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 150000002118 epoxides Chemical class 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 235000011194 food seasoning agent Nutrition 0.000 description 1
- ACGUYXCXAPNIKK-UHFFFAOYSA-N hexachlorophene Chemical compound OC1=C(Cl)C=C(Cl)C(Cl)=C1CC1=C(O)C(Cl)=CC(Cl)=C1Cl ACGUYXCXAPNIKK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 108010089741 opacity factor Proteins 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000002688 persistence Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000246 remedial effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- -1 siloxanes Chemical class 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229920002994 synthetic fiber Polymers 0.000 description 1
- 230000009974 thixotropic effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007226358A JP5331321B2 (ja) | 2007-08-31 | 2007-08-31 | 表示装置の製造方法 |
JP2007-226358 | 2007-08-31 | ||
JP2007226358 | 2007-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101378012A true CN101378012A (zh) | 2009-03-04 |
CN101378012B CN101378012B (zh) | 2012-03-28 |
Family
ID=40421484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102151316A Active CN101378012B (zh) | 2007-08-31 | 2008-09-01 | 电子部件和显示装置及所述电子部件和显示装置的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7972949B2 (zh) |
JP (1) | JP5331321B2 (zh) |
CN (1) | CN101378012B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103098115A (zh) * | 2010-09-03 | 2013-05-08 | 夏普株式会社 | 有源矩阵基板及其制造方法以及显示装置 |
CN102067320B (zh) * | 2009-05-19 | 2014-03-19 | 松下电器产业株式会社 | 柔性半导体装置的制造方法 |
CN105908142A (zh) * | 2016-04-15 | 2016-08-31 | 大连交通大学 | 一种高温薄膜应变计及其制作方法 |
CN109856930A (zh) * | 2017-11-30 | 2019-06-07 | 京东方科技集团股份有限公司 | 对准标记、基板及其制作方法、曝光对准方法 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8815747B2 (en) * | 2010-06-03 | 2014-08-26 | Micron Technology, Inc. | Methods of forming patterns on substrates |
US8586480B1 (en) | 2012-07-31 | 2013-11-19 | Ixys Corporation | Power MOSFET having selectively silvered pads for clip and bond wire attach |
JP6026848B2 (ja) * | 2012-10-23 | 2016-11-16 | 東京エレクトロン株式会社 | パターン形成方法及び凸版 |
US9330914B2 (en) | 2013-10-08 | 2016-05-03 | Micron Technology, Inc. | Methods of forming line patterns in substrates |
CN104090430B (zh) * | 2014-06-18 | 2017-01-18 | 京东方科技集团股份有限公司 | 调温遮罩和取向膜预固化装置 |
KR101857414B1 (ko) * | 2016-02-25 | 2018-05-15 | 주식회사 이오테크닉스 | 마킹 위치 보정장치 및 방법 |
CN112635553B (zh) * | 2020-12-25 | 2022-09-16 | 广东省科学院半导体研究所 | 薄膜晶体管的制作方法和显示装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3730002B2 (ja) | 1998-01-07 | 2005-12-21 | 光村印刷株式会社 | 印刷機及び印刷方法 |
US6493048B1 (en) * | 1998-10-21 | 2002-12-10 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same |
JP3236266B2 (ja) | 1998-10-27 | 2001-12-10 | 鹿児島日本電気株式会社 | パターン形成方法 |
US6255130B1 (en) | 1998-11-19 | 2001-07-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and a method for manufacturing the same |
JP3616584B2 (ja) | 2000-06-12 | 2005-02-02 | 鹿児島日本電気株式会社 | パターン形成方法及びそれを用いた表示装置の製造方法 |
JP3415602B2 (ja) | 2000-06-26 | 2003-06-09 | 鹿児島日本電気株式会社 | パターン形成方法 |
GB0230129D0 (en) | 2002-12-24 | 2003-01-29 | Koninkl Philips Electronics Nv | Method of fabricating a device |
JP2005159294A (ja) | 2003-09-18 | 2005-06-16 | Nec Kagoshima Ltd | 基板処理方法及びそれに用いる薬液 |
JP2006124546A (ja) | 2004-10-29 | 2006-05-18 | Hitachi Chem Co Ltd | 印刷インキ組成物、レジストパターンの形成法、電子部品の製造法及び電子部品 |
JP4542452B2 (ja) * | 2005-03-18 | 2010-09-15 | 株式会社フューチャービジョン | 薄膜トランジスタの製造方法 |
JP2007299779A (ja) * | 2006-04-27 | 2007-11-15 | Tokyo Electron Ltd | マスクパターンの形成方法およびtftの製造方法 |
-
2007
- 2007-08-31 JP JP2007226358A patent/JP5331321B2/ja not_active Expired - Fee Related
-
2008
- 2008-08-29 US US12/201,391 patent/US7972949B2/en active Active
- 2008-09-01 CN CN2008102151316A patent/CN101378012B/zh active Active
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102067320B (zh) * | 2009-05-19 | 2014-03-19 | 松下电器产业株式会社 | 柔性半导体装置的制造方法 |
CN103098115A (zh) * | 2010-09-03 | 2013-05-08 | 夏普株式会社 | 有源矩阵基板及其制造方法以及显示装置 |
CN103098115B (zh) * | 2010-09-03 | 2015-03-25 | 夏普株式会社 | 有源矩阵基板及其制造方法以及显示装置 |
CN105908142A (zh) * | 2016-04-15 | 2016-08-31 | 大连交通大学 | 一种高温薄膜应变计及其制作方法 |
CN105908142B (zh) * | 2016-04-15 | 2018-08-14 | 大连交通大学 | 一种高温薄膜应变计及其制作方法 |
CN109856930A (zh) * | 2017-11-30 | 2019-06-07 | 京东方科技集团股份有限公司 | 对准标记、基板及其制作方法、曝光对准方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2009058791A (ja) | 2009-03-19 |
US7972949B2 (en) | 2011-07-05 |
JP5331321B2 (ja) | 2013-10-30 |
US20090227057A1 (en) | 2009-09-10 |
CN101378012B (zh) | 2012-03-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101378012B (zh) | 电子部件和显示装置及所述电子部件和显示装置的制造方法 | |
KR100759627B1 (ko) | 박막의 패턴닝 방법 및 그것을 이용한 tft 어레이 기판 및그 제조 방법 | |
CN100507695C (zh) | 液晶显示器件的制造方法 | |
US10032881B2 (en) | Mask, manufacturing method thereof and exposure system | |
CN103165529B (zh) | 一种阵列基板的制备方法 | |
CN104102059A (zh) | Tft阵列基板及其制造方法 | |
CN102902111B (zh) | 形成透明电极以及制造液晶显示装置的阵列基板的方法 | |
US7795081B2 (en) | Method for manufacturing thin film transistor | |
CN104576655A (zh) | 一种coa基板及其制作方法 | |
CN104617102A (zh) | 阵列基板及阵列基板制造方法 | |
CN104538348B (zh) | 过孔和显示基板的制作方法 | |
KR101467710B1 (ko) | Tft 어레이 기판, 그 제조방법 및 디스플레이 장치 | |
CN105182625A (zh) | 一种显示基板及其制作方法和显示装置 | |
CN102608860B (zh) | 光刻蚀方法、光罩组合及曝光*** | |
CN105655289B (zh) | 一种阵列基板、其制作方法及显示装置 | |
CN106024705B (zh) | Tft基板的制作方法 | |
CN104810321A (zh) | 一种tft阵列基板及显示装置的制备方法 | |
EA031170B1 (ru) | Способ предотвращения короткого замыкания между металлическими проводами в дисплее на органических светодиодах | |
CN101226316B (zh) | 液晶显示器下基板的制作方法 | |
CN100452304C (zh) | 薄膜晶体管的制造方法及液晶显示器用的下基板 | |
JP2007279687A (ja) | 液晶ディスプレー下基板の製造方法 | |
KR102278989B1 (ko) | 포토마스크 구조 및 어레이 기판 제조 방법 | |
CN105842980A (zh) | 掩膜板及设计方法、阵列基板及制作方法、相关显示装置 | |
CN101692439A (zh) | 薄膜晶体管数组基板的制作方法 | |
US20070275311A1 (en) | Flat panel display manufacturing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
ASS | Succession or assignment of patent right |
Owner name: NIPPON ELECTRIC CO., LTD. Free format text: FORMER OWNER: NEC LIQUID CRYSTAL TECHNOLOGY CO., LTD. Effective date: 20100419 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: KANAGAWA PREFECTURE, JAPAN COUNTY TO: TOKYO, JAPAN |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100419 Address after: Tokyo, Japan Applicant after: NEC Corp. Address before: Kanagawa, Japan Applicant before: NEC LCD Technologies, Ltd. |
|
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: JINZHEN CO., LTD. Free format text: FORMER OWNER: NEC CORP. Effective date: 20130614 |
|
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130614 Address after: Samoa Apia hiSoft Center No. 217 mailbox Patentee after: Jinzhen Co.,Ltd. Address before: Tokyo, Japan Patentee before: NEC Corp. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20230518 Address after: Floor 4, No. 15, Lane 168, Xingshan Road, Neihu District, Taipei City, Taiwan, China, 114762, China Patentee after: HANNSTAR DISPLAY Corp. Address before: Apia, hiSoft center, No. 217 mailbox Patentee before: Jinzhen Co.,Ltd. |
|
TR01 | Transfer of patent right |