CN101378012B - 电子部件和显示装置及所述电子部件和显示装置的制造方法 - Google Patents
电子部件和显示装置及所述电子部件和显示装置的制造方法 Download PDFInfo
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- CN101378012B CN101378012B CN2008102151316A CN200810215131A CN101378012B CN 101378012 B CN101378012 B CN 101378012B CN 2008102151316 A CN2008102151316 A CN 2008102151316A CN 200810215131 A CN200810215131 A CN 200810215131A CN 101378012 B CN101378012 B CN 101378012B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007226358A JP5331321B2 (ja) | 2007-08-31 | 2007-08-31 | 表示装置の製造方法 |
JP2007-226358 | 2007-08-31 | ||
JP2007226358 | 2007-08-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101378012A CN101378012A (zh) | 2009-03-04 |
CN101378012B true CN101378012B (zh) | 2012-03-28 |
Family
ID=40421484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008102151316A Active CN101378012B (zh) | 2007-08-31 | 2008-09-01 | 电子部件和显示装置及所述电子部件和显示装置的制造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7972949B2 (zh) |
JP (1) | JP5331321B2 (zh) |
CN (1) | CN101378012B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102067320B (zh) * | 2009-05-19 | 2014-03-19 | 松下电器产业株式会社 | 柔性半导体装置的制造方法 |
US8815747B2 (en) * | 2010-06-03 | 2014-08-26 | Micron Technology, Inc. | Methods of forming patterns on substrates |
CN103098115B (zh) * | 2010-09-03 | 2015-03-25 | 夏普株式会社 | 有源矩阵基板及其制造方法以及显示装置 |
US8586480B1 (en) | 2012-07-31 | 2013-11-19 | Ixys Corporation | Power MOSFET having selectively silvered pads for clip and bond wire attach |
JP6026848B2 (ja) * | 2012-10-23 | 2016-11-16 | 東京エレクトロン株式会社 | パターン形成方法及び凸版 |
US9330914B2 (en) | 2013-10-08 | 2016-05-03 | Micron Technology, Inc. | Methods of forming line patterns in substrates |
CN104090430B (zh) * | 2014-06-18 | 2017-01-18 | 京东方科技集团股份有限公司 | 调温遮罩和取向膜预固化装置 |
KR101857414B1 (ko) * | 2016-02-25 | 2018-05-15 | 주식회사 이오테크닉스 | 마킹 위치 보정장치 및 방법 |
CN105908142B (zh) * | 2016-04-15 | 2018-08-14 | 大连交通大学 | 一种高温薄膜应变计及其制作方法 |
CN109856930B (zh) * | 2017-11-30 | 2021-05-25 | 京东方科技集团股份有限公司 | 对准标记、基板及其制作方法、曝光对准方法 |
CN112635553B (zh) * | 2020-12-25 | 2022-09-16 | 广东省科学院半导体研究所 | 薄膜晶体管的制作方法和显示装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6493048B1 (en) * | 1998-10-21 | 2002-12-10 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same |
CN1605942A (zh) * | 2003-09-18 | 2005-04-13 | Nec液晶技术株式会社 | 衬底的处理方法及用于该方法的药液 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3730002B2 (ja) | 1998-01-07 | 2005-12-21 | 光村印刷株式会社 | 印刷機及び印刷方法 |
JP3236266B2 (ja) | 1998-10-27 | 2001-12-10 | 鹿児島日本電気株式会社 | パターン形成方法 |
US6255130B1 (en) | 1998-11-19 | 2001-07-03 | Samsung Electronics Co., Ltd. | Thin film transistor array panel and a method for manufacturing the same |
JP3616584B2 (ja) | 2000-06-12 | 2005-02-02 | 鹿児島日本電気株式会社 | パターン形成方法及びそれを用いた表示装置の製造方法 |
JP3415602B2 (ja) | 2000-06-26 | 2003-06-09 | 鹿児島日本電気株式会社 | パターン形成方法 |
GB0230129D0 (en) | 2002-12-24 | 2003-01-29 | Koninkl Philips Electronics Nv | Method of fabricating a device |
JP2006124546A (ja) | 2004-10-29 | 2006-05-18 | Hitachi Chem Co Ltd | 印刷インキ組成物、レジストパターンの形成法、電子部品の製造法及び電子部品 |
JP4542452B2 (ja) * | 2005-03-18 | 2010-09-15 | 株式会社フューチャービジョン | 薄膜トランジスタの製造方法 |
JP2007299779A (ja) * | 2006-04-27 | 2007-11-15 | Tokyo Electron Ltd | マスクパターンの形成方法およびtftの製造方法 |
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2007
- 2007-08-31 JP JP2007226358A patent/JP5331321B2/ja not_active Expired - Fee Related
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2008
- 2008-08-29 US US12/201,391 patent/US7972949B2/en active Active
- 2008-09-01 CN CN2008102151316A patent/CN101378012B/zh active Active
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US6493048B1 (en) * | 1998-10-21 | 2002-12-10 | Samsung Electronics Co., Ltd. | Thin film transistor array panel for a liquid crystal display and a method for manufacturing the same |
CN1605942A (zh) * | 2003-09-18 | 2005-04-13 | Nec液晶技术株式会社 | 衬底的处理方法及用于该方法的药液 |
Non-Patent Citations (2)
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JP特开2006-124546A 2006.05.18 |
JP特表2006-512757A 2006.04.13 |
Also Published As
Publication number | Publication date |
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JP2009058791A (ja) | 2009-03-19 |
US7972949B2 (en) | 2011-07-05 |
JP5331321B2 (ja) | 2013-10-30 |
CN101378012A (zh) | 2009-03-04 |
US20090227057A1 (en) | 2009-09-10 |
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