CN101080801B - 扫描电子束照射装置 - Google Patents
扫描电子束照射装置 Download PDFInfo
- Publication number
- CN101080801B CN101080801B CN2006800013062A CN200680001306A CN101080801B CN 101080801 B CN101080801 B CN 101080801B CN 2006800013062 A CN2006800013062 A CN 2006800013062A CN 200680001306 A CN200680001306 A CN 200680001306A CN 101080801 B CN101080801 B CN 101080801B
- Authority
- CN
- China
- Prior art keywords
- symbol
- electron beam
- skew
- scan
- offset
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000007246 mechanism Effects 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 9
- 238000010894 electron beam technology Methods 0.000 claims description 165
- 238000012360 testing method Methods 0.000 claims description 36
- 238000004364 calculation method Methods 0.000 claims description 20
- 230000008520 organization Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 27
- 230000003760 hair shine Effects 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 230000001915 proofreading effect Effects 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical or photographic arrangements associated with the tube
- H01J37/222—Image processing arrangements associated with the tube
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/261—Details
- H01J37/265—Controlling the tube; circuit arrangements adapted to a particular application not otherwise provided, e.g. bright-field-dark-field illumination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
- H01J37/3045—Object or beam position registration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Length-Measuring Devices Using Wave Or Particle Radiation (AREA)
- Electron Beam Exposure (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Radiation-Therapy Devices (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP026721/2005 | 2005-02-02 | ||
JP2005026721 | 2005-02-02 | ||
PCT/JP2006/300804 WO2006082714A1 (ja) | 2005-02-02 | 2006-01-20 | 走査ビーム照射装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101080801A CN101080801A (zh) | 2007-11-28 |
CN101080801B true CN101080801B (zh) | 2010-06-23 |
Family
ID=36777103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2006800013062A Expired - Fee Related CN101080801B (zh) | 2005-02-02 | 2006-01-20 | 扫描电子束照射装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP4555909B2 (ja) |
KR (1) | KR100893283B1 (ja) |
CN (1) | CN101080801B (ja) |
TW (1) | TWI290430B (ja) |
WO (1) | WO2006082714A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4855875B2 (ja) * | 2006-09-06 | 2012-01-18 | 富士フイルム株式会社 | 電子ビーム描画装置及び電子ビームのずれ補償方法 |
JP5164355B2 (ja) * | 2006-09-27 | 2013-03-21 | 株式会社日立ハイテクノロジーズ | 荷電粒子ビームの走査方法及び荷電粒子線装置 |
CN102047130B (zh) * | 2008-06-02 | 2013-09-04 | 株式会社岛津制作所 | 液晶阵列检查装置及拍摄范围的修正方法 |
US8410447B2 (en) * | 2008-10-23 | 2013-04-02 | Shimadzu Corporation | Particle radiotherapy apparatus |
JP5472690B2 (ja) * | 2009-06-23 | 2014-04-16 | 株式会社島津製作所 | 走査ビーム照射装置 |
JP5788719B2 (ja) * | 2011-06-09 | 2015-10-07 | 株式会社日立ハイテクノロジーズ | ステージ装置およびステージ装置の制御方法 |
JP6643072B2 (ja) * | 2015-12-10 | 2020-02-12 | キヤノン株式会社 | 顕微鏡システムおよびその制御方法 |
CN109166781A (zh) * | 2018-09-11 | 2019-01-08 | 镇江乐华电子科技有限公司 | 扫描透射电子显微成像方法和*** |
JP7238672B2 (ja) * | 2019-07-25 | 2023-03-14 | 株式会社ニューフレアテクノロジー | マルチビーム描画方法及びマルチビーム描画装置 |
CN111879494B (zh) * | 2020-08-10 | 2022-05-17 | 中国空气动力研究与发展中心超高速空气动力研究所 | 基于电子束荧光的低密度风洞流场空间测点位置标定方法 |
CN112259469B (zh) * | 2020-10-21 | 2022-10-18 | 上海华力集成电路制造有限公司 | 半导体器件关键尺寸量测方法及取得sem图像的方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5940452A (ja) * | 1982-08-30 | 1984-03-06 | Fujitsu Ltd | 電子ビ−ム装置 |
JP3238487B2 (ja) * | 1991-11-14 | 2001-12-17 | 富士通株式会社 | 電子ビーム装置 |
JP4186464B2 (ja) * | 2000-03-13 | 2008-11-26 | 株式会社日立製作所 | 荷電粒子ビーム走査式装置 |
JP4690586B2 (ja) * | 2000-06-09 | 2011-06-01 | 株式会社アドバンテスト | マスク、電子ビームの偏向量の校正方法、電子ビーム露光装置 |
JP3765988B2 (ja) * | 2001-02-23 | 2006-04-12 | 株式会社日立製作所 | 電子線式外観検査装置 |
JP3349504B1 (ja) * | 2001-08-03 | 2002-11-25 | 株式会社日立製作所 | 電子線描画装置および電子顕微鏡 |
JP2004356276A (ja) * | 2003-05-28 | 2004-12-16 | Riipuru:Kk | 荷電粒子ビーム近接露光方法及び装置 |
JP3689097B2 (ja) * | 2003-09-03 | 2005-08-31 | 株式会社東芝 | 荷電ビーム描画装置及び描画方法 |
-
2005
- 2005-12-27 TW TW094146676A patent/TWI290430B/zh not_active IP Right Cessation
-
2006
- 2006-01-20 JP JP2007501526A patent/JP4555909B2/ja not_active Expired - Fee Related
- 2006-01-20 KR KR1020077008261A patent/KR100893283B1/ko not_active IP Right Cessation
- 2006-01-20 CN CN2006800013062A patent/CN101080801B/zh not_active Expired - Fee Related
- 2006-01-20 WO PCT/JP2006/300804 patent/WO2006082714A1/ja not_active Application Discontinuation
Non-Patent Citations (1)
Title |
---|
JP平5-251315A 1993.09.28 |
Also Published As
Publication number | Publication date |
---|---|
CN101080801A (zh) | 2007-11-28 |
KR20070056142A (ko) | 2007-05-31 |
TWI290430B (en) | 2007-11-21 |
TW200633496A (en) | 2006-09-16 |
JPWO2006082714A1 (ja) | 2008-08-07 |
KR100893283B1 (ko) | 2009-04-17 |
WO2006082714A1 (ja) | 2006-08-10 |
JP4555909B2 (ja) | 2010-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101080801B (zh) | 扫描电子束照射装置 | |
CA2980201C (en) | Methods, systems and devices relating to distortion correction in imaging devices | |
CN115280463A (zh) | 晶片中检查体积的截面成像方法 | |
JP5424144B2 (ja) | ビジョン検査システム及びこれを用いた座標変換方法 | |
TWI724827B (zh) | 缺陷觀察裝置 | |
JP5788719B2 (ja) | ステージ装置およびステージ装置の制御方法 | |
CN107516624A (zh) | 一种样品位置校准方法和装置 | |
CN108352283B (zh) | Sem影像取得装置及sem影像取得方法 | |
WO2006112242A1 (ja) | 基板検査装置 | |
JP5777967B2 (ja) | 荷電粒子線装置及び計測方法 | |
WO2016199439A1 (ja) | 三次元計測装置 | |
JP2001319609A (ja) | 荷電粒子線装置 | |
JP2014099568A (ja) | 画像処理装置、自己組織化リソグラフィ技術によるパターン生成方法、及びコンピュータープログラム | |
WO2013011316A1 (en) | X-ray imaging | |
CN101133473B (zh) | 扫描束装置的资料处理方法 | |
CN101242546A (zh) | 影像校正***及方法 | |
JP4253023B2 (ja) | 荷電粒子線装置及び走査電子顕微鏡の制御装置 | |
US20100200749A1 (en) | Semiconductor Testing Method and Semiconductor Tester | |
Kangasrääsiö et al. | Calibration of a flatbed scanner for traceable paper area measurement | |
CN104024837B (zh) | 液晶阵列检查装置及液晶阵列检查装置的信号处理方法 | |
JP2015007587A (ja) | 試料観察装置用のテンプレート作成装置 | |
Degenhardt et al. | Correction method for 3D non-linear drift distortions in atomic force microscopy raster measurements | |
JP2011090528A (ja) | 真空処理装置、グラフ線表示方法 | |
US20080218193A1 (en) | Semiconductor device evaluation method and apparatus using the same | |
JP2010199037A (ja) | 荷電粒子ビーム装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20100623 Termination date: 20170120 |