CN100424884C - Cmos图像传感器及其制造方法 - Google Patents
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Abstract
本发明提供了一种CMOS图像传感器及其制造方法,其中,在多个微透镜之间形成遮光层,以改善反射特性,并在封装时保护微透镜。该CMOS图像传感器包括:半导体衬底;至少一个光电二极管,在半导体衬底上;第一绝缘层,形成于包括有光电二极管的衬底上;多条金属线,形成于第一绝缘层上;第二绝缘层,形成于包括有金属线的第一绝缘层上;多个遮光层,形成于第二绝缘层上;以及微透镜,形成于多个遮光层之间的第二绝缘层上。
Description
相关申请的交叉参考
本申请要求于2004年12月30日提交的韩国专利申请第10-2004-0117181号的优先权,其全部内容结合于此作为参考。
技术领域
本发明涉及一种CMOS图像传感器及其制造方法,更特别地,涉及一种CMOS图像传感器及其制造方法,其中,在多个微透镜之间形成遮光层,以改善反射特性,并在封装时保护微透镜。
背景技术
一般而言,图像传感器是将光学图像转换为电信号的半导体器件。在CCD(电荷耦合器件)图像传感器中,多个MOS(金属氧化物半导体)电容器彼此靠近地排布,以转移并存储电荷载流子。在CMOS(互补MOS)图像传感器中,通过使用控制电路和信号处理电路作为***电路的CMOS技术,来制造对应于像素数量的多个MOS晶体管,并且采用应用MOS晶体管逐个地检测输出的开关***(switching system)。
下文中,将参照附图详细地说明根据相关技术的CMOS图像传感器及其制造方法。
图1是示出根据相关技术的CMOS图像传感器的制造方法的剖视图。
在半导体衬底10上形成多个光电二极管11,并且在包括有光电二极管11的半导体衬底10上多次交替地形成第一绝缘层12和金属线13。随后,在包括最上层金属线13的第一绝缘层12上形成由氧化层构成的第二绝缘层14,并使其平坦化。在第二绝缘层14上形成遮光材料并使其形成图样,以形成遮光层15。随后,为了保护遮光层15,在遮光层15上形成由氧化层或氮化层构成的第三绝缘层16,并使其形成图样。使用化学机械抛光(CMP)法进行平坦化。随后,在多个遮光层15之间的第三绝缘层16上形成微透镜17。此时,微透镜17部分地重叠遮光层15的侧部。
根据相关技术的CMOS图像传感器及其制造方法存在以下问题。
在使用遮光层的情况下,由于形成用于保护遮光层的绝缘层,所以增加了步骤数量,从而效率降低。
此外,由于封装工艺是在微透镜上进行,所以很难保护微透镜。
发明内容
因此,本发明涉及一种垂直CMOS图像传感器的制造方法,其充分解决了由于相关技术的局限性和缺陷而导致的一个或多个问题。
本发明的一个目的在于提供一种CMOS图像传感器及其制造方法,其中,在多个微透镜之间形成遮光层,以改善反射特性,并且在封装时保护微透镜。
本发明的其它优点、目的和特征将至少部分地在随后的说明书中阐述,部分地在本领域普通技术人员分析以下内容的基础上变得显而易见,或者通过实施本发明而了解。本发明的目的和其它优点可通过在说明书、权利要求、以及附图中所特别指出的结构来实现和达到。
为了实现这些目标和其它优点,并根据本发明的目的,如本文中所体现和概括描述的,根据本发明一方面的CMOS图像传感器包括:半导体衬底;多个光电二极管,形成于所述半导体衬底上;第一绝缘层,形成于包括有所述光电二极管的所述衬底上;多条金属线,形成于所述第一绝缘层上;第二绝缘层,形成于包括有所述金属线的所述第一绝缘层上;多个遮光层,形成于所述第二绝缘层上;以及微透镜,形成于所述多个遮光层之间的所述第二绝缘层上。
优选地,所述遮光层形成于所述第二绝缘层上,以与所述金属线相对应。
优选地,所述遮光层与所述微透镜可彼此不重叠。
优选地,使所述遮光层形成为厚度等于或大于所述微透镜的厚度。
在本发明的另一方面中,一种用于制造CMOS图像传感器的方法包括以下步骤:在半导体衬底上形成多个光电二极管;在包括有所述光电二极管的所述衬底上形成第一绝缘层;在所述第一绝缘层上形成多条金属线;在包括有所述金属线的所述第一绝缘层上形成第二绝缘层;在所述第二绝缘层上形成多个遮光层;以及在所述多个遮光层之间的所述第二绝缘层上形成微透镜。
优选地,形成所述微透镜的步骤还可包括:在包括有所述遮光层的所述第二绝缘层上形成微透镜材料;蚀刻所述微透镜材料直至平坦化;以及通过进行烘烤处理,形成所述微透镜。
优选地,蚀刻所述微透镜材料并使其平坦化,以使其厚度等于或小于所述遮光层的厚度。
优选地,在所述第二绝缘层上形成所述遮光层,以与所述金属线相对应。
优选地,所述遮光层与所述微透镜彼此不重叠。
优选地,形成所述微透镜的步骤还可包括:在包括有所述遮光层的所述第二绝缘层上形成微透镜材料;蚀刻所述微透镜材料直至平坦化;选择性地蚀刻所述平坦化的微透镜材料;以及通过进行烘烤工艺,形成所述微透镜。
附图说明
附图提供了对本发明的进一步理解,将其并入和构成本申请的一部分。附图说明本发明的实施例,并与说明书一起解释本发明原理。在附图中:
图1是示出根据相关技术的CMOS图像传感器的制造方法的剖视图;
图2A至2G是示出根据本发明的CMOS图像传感器的制造方法的剖视图。
具体实施方式
以下将详细参照本发明的优选实施例,其实例在附图中示出。尽可能地,在所有附图中使用相同的参考标号表示相同或相似的部件。
图2A至2G是示出根据本发明的CMOS图像传感器的制造方法的剖视图。
如图2A所示,在半导体衬底20上形成多个光电二极管21,并且在包括有光电二极管21的半导体衬底20上多次交替地形成第一绝缘层22和金属线23。在形成最上层金属线23之后,在包括最上层金属线23的第一绝缘层22上形成由氧化层或氮化层构成的第二绝缘层24,并且使其平坦化。使用化学机械抛光(CMP)法进行平坦化。随后,在第二绝缘层24上形成遮光层材料25。随后,当在遮光层材料25上涂覆光刻胶,并使用微透镜掩模将其曝光及显影之后,去除在微透镜区域上的光刻胶以形成光刻胶图样26。
如图2B所示,使用光刻胶图样26作为掩模蚀刻遮光层材料25,以形成遮光层27。
如图2C所示,去除光刻胶图样26,在遮光层27和第二绝缘层24上形成微透镜材料,并使用CMP方法将其平坦化,以在多个遮光层27之间形成微透镜层28。此时,考虑到平坦化时的蚀刻量,所以使微透镜材料形成为比微透镜厚。
优选地,使微透镜层28形成为厚度等于或小于遮光层27的厚度,以在封装工艺过程中保护微透镜。
如图2D所示,以预定温度烘烤微透镜层28,以形成微透镜29。
在另一实施例中,则是通过选择性地蚀刻微透镜层28来形成微透镜。具体来说,如图2E所示,在微透镜层28上形成光刻胶图样30,以露出微透镜层28的预定部分。
随后,如图2F所示,使用光刻胶图样30作为掩模选择性蚀刻微透镜层28,然后将光刻胶图样30去除以形成微透镜层图样28a。
如图2G所示,以预定温度烘烤微透镜层图样28a,以形成微透镜29。
根据本发明,由于使用自对准方法在多个遮光层之间形成微透镜,所以使得多个微透镜被对准,并且可容易地确保多个微透镜的间隙。此外,由于在多个微透镜之间形成遮光层,所以可利用光在多个微透镜之间透射并且从金属线反射的特性来提高光效率。
而且,由于使微透镜形成为厚度等于或小于遮光层的厚度,所以可在封装时保护微透镜,由此可提高成品率和出产率。
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改善等,均应包含在本发明的保护范围之内。
Claims (9)
1. 一种CMOS图像传感器,包括:
半导体衬底;
多个光电二极管,形成于所述半导体衬底上;
第一绝缘层,形成于包括有所述光电二极管的所述衬底上;
多条金属线,形成于所述第一绝缘层中;
第二绝缘层,形成于包括有所述金属线的所述第一绝缘层上;
多个遮光层,形成于所述第二绝缘层上;以及
微透镜,形成于所述多个遮光层之间的所述第二绝缘层上,
其中,所述微透镜形成为厚度等于或小于所述遮光层的厚度。
2. 根据权利要求1所述的CMOS图像传感器,其中,所述遮光层形成于所述第二绝缘层上,以与所述金属线相对应。
3. 根据权利要求1所述的CMOS图像传感器,其中,所述遮光层与所述微透镜彼此不重叠。
4. 一种制造CMOS图像传感器的方法,包括以下步骤:
在半导体衬底上形成多个光电二极管;
在包括有所述光电二极管的所述衬底上形成第一绝缘层;
在所述第一绝缘层中形成多条金属线;
在包括有所述金属线的所述第一绝缘层上形成第二绝缘层;
在所述第二绝缘层上形成多个遮光层;以及
在所述多个遮光层之间的所述第二绝缘层上形成厚度等于或小于所述遮光层厚度的微透镜。
5. 根据权利要求4所述的方法,其中,形成所述微透镜的步骤还包括:
在包括有所述遮光层的所述第二绝缘层上形成微透镜材料;
蚀刻所述微透镜材料直至平坦化;以及
通过进行烘烤处理,形成所述微透镜。
6. 根据权利要求4所述的方法,其中,所述遮光层形成于所述第二绝缘层上,以与所述金属线相对应。
7. 根据权利要求4所述的方法,其中,所述遮光层与所述微透镜彼此不重叠。
8. 根据权利要求4所述的方法,其中,形成所述微透镜的步骤还包括:
在包括有所述遮光层的所述第二绝缘层上形成微透镜材料;
蚀刻所述微透镜材料直至平坦化;
选择性地蚀刻所述平坦化的微透镜材料;以及
通过进行烘烤工艺,形成所述微透镜。
9. 根据权利要求8所述的方法,其中,蚀刻所述微透镜材料并使其平坦化,以使其厚度等于或小于所述遮光层的厚度。
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US7423307B2 (en) | 2008-09-09 |
DE102005063114A1 (de) | 2006-08-17 |
CN1819221A (zh) | 2006-08-16 |
KR20060077669A (ko) | 2006-07-05 |
KR100660319B1 (ko) | 2006-12-22 |
US8049257B2 (en) | 2011-11-01 |
JP2006191023A (ja) | 2006-07-20 |
US20080303073A1 (en) | 2008-12-11 |
DE102005063114B4 (de) | 2011-05-12 |
JP4423255B2 (ja) | 2010-03-03 |
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