JP2006191023A - Cmosイメージセンサおよびその製造方法 - Google Patents
Cmosイメージセンサおよびその製造方法 Download PDFInfo
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- JP2006191023A JP2006191023A JP2005358615A JP2005358615A JP2006191023A JP 2006191023 A JP2006191023 A JP 2006191023A JP 2005358615 A JP2005358615 A JP 2005358615A JP 2005358615 A JP2005358615 A JP 2005358615A JP 2006191023 A JP2006191023 A JP 2006191023A
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- microlens
- insulating film
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- 238000000034 method Methods 0.000 title claims description 36
- 239000002184 metal Substances 0.000 claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 239000004065 semiconductor Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000463 material Substances 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 9
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 238000012858 packaging process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】本発明に係るCMOSイメージセンサは、半導体基板と、前記半導体基板上に形成される複数の光感知素子と、前記光感知素子を含む前記半導体基板上に形成される第1絶縁膜と、前記第1絶縁膜に形成される金属配線と、前記金属配線を含む前記第1絶縁膜上に形成される第2絶縁膜と、前記第2絶縁膜上に形成される光遮蔽膜と、前記光遮蔽膜の間の前記第2絶縁膜上に形成されるマイクロレンズとを含む。
【選択図】図2D
Description
半導体基板10に複数の光感知素子11を形成し、光感知素子11を含む半導体基板10上に第1絶縁膜12と金属配線13とを交互に設けた複数層を形成する。そして、最後の金属配線13を含む第1絶縁膜12上に第2絶縁膜14を酸化膜で積層した後、平坦化する。
図2Aに示したように、半導体基板20に複数の光感知素子21を形成し、光感知素子21を含む半導体基板20上に第1絶縁膜22を形成し、第1絶縁膜22に金属配線23を形成する。第1絶縁膜22と金属配線23の形成工程を数回反復して、必要なだけ積層した後、最後の金属配線23を含む第1絶縁膜22上に第2絶縁膜24を酸化膜または窒化膜などで形成し、第2絶縁膜24をCMP工程を用いて平坦化する。
Claims (11)
- 半導体基板と、
前記半導体基板上に形成される複数の光感知素子と、
前記光感知素子を含む前記半導体基板上に形成される第1絶縁膜と、
前記第1絶縁膜に形成される金属配線と、
前記金属配線を含む前記第1絶縁膜上に形成される第2絶縁膜と、
前記第2絶縁膜上に形成される光遮蔽膜と、
前記光遮蔽膜の間の前記第2絶縁膜上に形成されるマイクロレンズと
を含むことを特徴とするCMOSイメージセンサ。 - 前記光遮蔽膜は前記金属配線に相応する領域に形成されることを特徴とする請求項1に記載のCMOSイメージセンサ。
- 前記光遮蔽膜と前記マイクロレンズは互いに重畳しないように形成されることを特徴とする請求項1に記載のCMOSイメージセンサ。
- 前記光遮蔽膜の厚さと前記マイクロレンズの厚さが少なくとも同一に形成されることを特徴とする請求項1に記載のCMOSイメージセンサ。
- 半導体基板に複数の光感知素子を形成するステップと、
前記光感知素子を含む前記半導体基板上に第1絶縁膜を形成するステップと、
前記第1絶縁膜に金属配線を形成するステップと、
前記金属配線を含む前記第1絶縁膜上に第2絶縁膜を形成するステップと、
前記第2絶縁膜上に光遮蔽膜を形成するステップと、
前記光遮蔽膜の間の前記第2絶縁膜上にマイクロレンズを形成するステップと
を含むことを特徴とするCMOSイメージセンサの製造方法。 - 前記マイクロレンズの形成ステップは、
前記光遮蔽膜を含む前記第2絶縁膜上にマイクロレンズ物質層を形成するステップと、
前記マイクロレンズ物質層をエッチングして平坦化するステップと、
前記マイクロレンズ物質層にベイク工程を行い、マイクロレンズを形成するステップとを含むことを特徴とする請求項5に記載のCMOSイメージセンサの製造方法。 - 前記マイクロレンズ物質層の平坦化ステップは、前記光遮蔽膜の厚さと前記マイクロレンズ物質層の厚さが少なくとも同一となるように前記マイクロレンズ物質層をエッチングして平坦化することを特徴とする請求項6に記載のCMOSイメージセンサの製造方法。
- 前記光遮蔽膜の形成ステップで、
前記光遮蔽膜は、前記金属配線に相応する領域の前記第2絶縁膜上に形成することを特徴とする請求項5に記載のCMOSイメージセンサの製造方法。 - 前記光遮蔽膜の形成ステップで、
前記光遮蔽膜は、前記マイクロレンズと互いに重畳しないように形成することを特徴とする請求項5に記載のCMOSイメージセンサの製造方法。 - 前記マイクロレンズの形成ステップは、
前記光遮蔽膜を含む前記第2絶縁膜上にマイクロレンズ物質層を形成するステップと、
前記マイクロレンズ物質層をエッチングして平坦化するステップと、
前記平坦化したマイクロレンズ物質層を選択的にエッチングするステップと、
前記選択的にエッチングされたマイクロレンズ物質層にベイク工程を行い、マイクロレンズを形成するステップとをさらに含むことを特徴とする請求項5に記載のCMOSイメージセンサの製造方法。 - 前記マイクロレンズ物質層の平坦化ステップは、前記光遮蔽膜の厚さが前記マイクロレンズ物質層の厚さと少なくとも同一となるように前記マイクロレンズ物質層をエッチングして平坦化することを特徴とする請求項10に記載のCMOSイメージセンサの製造方法。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040117181A KR100660319B1 (ko) | 2004-12-30 | 2004-12-30 | 씨모스 이미지센서 및 그의 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006191023A true JP2006191023A (ja) | 2006-07-20 |
JP4423255B2 JP4423255B2 (ja) | 2010-03-03 |
Family
ID=36639404
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005358615A Expired - Fee Related JP4423255B2 (ja) | 2004-12-30 | 2005-12-13 | Cmosイメージセンサの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7423307B2 (ja) |
JP (1) | JP4423255B2 (ja) |
KR (1) | KR100660319B1 (ja) |
CN (1) | CN100424884C (ja) |
DE (1) | DE102005063114B4 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009130276A (ja) * | 2007-11-27 | 2009-06-11 | Hitachi Displays Ltd | 光センサ装置および画像表示装置 |
JP2009164385A (ja) * | 2008-01-08 | 2009-07-23 | Fujifilm Corp | 裏面照射型撮像素子 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100672664B1 (ko) * | 2004-12-29 | 2007-01-24 | 동부일렉트로닉스 주식회사 | 버티컬 씨모스 이미지 센서의 제조방법 |
KR100606906B1 (ko) * | 2004-12-29 | 2006-08-01 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 포토다이오드 및 그 제조방법 |
KR100660319B1 (ko) * | 2004-12-30 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서 및 그의 제조방법 |
KR100649031B1 (ko) * | 2005-06-27 | 2006-11-27 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
KR20070096115A (ko) * | 2005-12-29 | 2007-10-02 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 |
KR100826417B1 (ko) * | 2006-11-14 | 2008-04-29 | 삼성전기주식회사 | 웨이퍼 스케일 렌즈 모듈 및 그 제조방법 |
KR100818524B1 (ko) * | 2006-12-11 | 2008-03-31 | 동부일렉트로닉스 주식회사 | 이미지 소자 및 이의 제조 방법 |
KR100868653B1 (ko) * | 2007-05-03 | 2008-11-12 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조 방법 |
KR100896876B1 (ko) * | 2007-11-16 | 2009-05-12 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
KR100959432B1 (ko) * | 2007-12-26 | 2010-05-25 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
KR101024765B1 (ko) | 2008-10-09 | 2011-03-24 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
JP2010219425A (ja) * | 2009-03-18 | 2010-09-30 | Toshiba Corp | 半導体装置 |
JP6417809B2 (ja) * | 2014-03-05 | 2018-11-07 | ソニー株式会社 | 撮像装置 |
JP6750230B2 (ja) * | 2016-01-19 | 2020-09-02 | 大日本印刷株式会社 | 撮像モジュール、撮像装置 |
JP6910105B2 (ja) * | 2016-01-25 | 2021-07-28 | 大日本印刷株式会社 | レンズシート、撮像モジュール、及び撮像装置 |
CN108831901B (zh) * | 2018-09-05 | 2021-01-22 | 德淮半导体有限公司 | 背照式图像传感器及其制作方法 |
CN111106139A (zh) * | 2019-11-22 | 2020-05-05 | 深圳阜时科技有限公司 | 光学式集成装置 |
CN111106138A (zh) * | 2019-11-22 | 2020-05-05 | 深圳阜时科技有限公司 | 光学式感测装置和电子设备 |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4239554A (en) * | 1978-07-17 | 1980-12-16 | Shunpei Yamazaki | Semiconductor photoelectric conversion device |
US4722910A (en) * | 1986-05-27 | 1988-02-02 | Analog Devices, Inc. | Partially self-aligned metal contact process |
US5162887A (en) * | 1988-10-31 | 1992-11-10 | Texas Instruments Incorporated | Buried junction photodiode |
JPH03173472A (ja) * | 1989-12-01 | 1991-07-26 | Mitsubishi Electric Corp | マイクロレンズの形成方法 |
JPH06132505A (ja) | 1992-10-21 | 1994-05-13 | Sony Corp | 固体撮像素子及びその作製方法 |
US5494857A (en) * | 1993-07-28 | 1996-02-27 | Digital Equipment Corporation | Chemical mechanical planarization of shallow trenches in semiconductor substrates |
JPH08148665A (ja) | 1994-11-22 | 1996-06-07 | Nec Corp | 固体撮像素子 |
KR0165376B1 (ko) | 1995-03-31 | 1998-12-15 | 김광호 | 씨씨디용 이미지 센서 및 그 제조방법 |
JPH09222505A (ja) | 1996-02-16 | 1997-08-26 | Casio Comput Co Ltd | マイクロレンズを有するデバイスおよびマイクロレンズの形 成方法 |
US6055460A (en) * | 1997-08-06 | 2000-04-25 | Advanced Micro Devices, Inc. | Semiconductor process compensation utilizing non-uniform ion implantation methodology |
JP3770707B2 (ja) * | 1997-08-26 | 2006-04-26 | 松下電器産業株式会社 | 減衰全反射測定装置およびそれを用いた特定成分の測定方法 |
US6194770B1 (en) * | 1998-03-16 | 2001-02-27 | Photon Vision Systems Llc | Photo receptor with reduced noise |
US6110788A (en) * | 1998-09-16 | 2000-08-29 | Micron Technology, Inc. | Surface channel MOS transistors, methods for making the same, and semiconductor devices containing the same |
US6727521B2 (en) * | 2000-09-25 | 2004-04-27 | Foveon, Inc. | Vertical color filter detector group and array |
US6875558B1 (en) * | 1999-08-16 | 2005-04-05 | Applied Materials, Inc. | Integration scheme using self-planarized dielectric layer for shallow trench isolation (STI) |
JP2001068658A (ja) * | 1999-08-27 | 2001-03-16 | Sony Corp | 固体撮像装置及びその製造方法 |
JP4318007B2 (ja) * | 1999-10-07 | 2009-08-19 | 富士フイルム株式会社 | 固体撮像素子 |
US6171885B1 (en) * | 1999-10-12 | 2001-01-09 | Taiwan Semiconductor Manufacturing Company | High efficiency color filter process for semiconductor array imaging devices |
JP3296345B2 (ja) * | 1999-11-04 | 2002-06-24 | 日本電気株式会社 | 固体撮像装置及びその製造方法 |
US6187684B1 (en) * | 1999-12-09 | 2001-02-13 | Lam Research Corporation | Methods for cleaning substrate surfaces after etch operations |
KR100477789B1 (ko) * | 1999-12-28 | 2005-03-22 | 매그나칩 반도체 유한회사 | 이미지센서의 제조 방법 |
US7057656B2 (en) * | 2000-02-11 | 2006-06-06 | Hyundai Electronics Industries Co., Ltd. | Pixel for CMOS image sensor having a select shape for low pixel crosstalk |
US6746933B1 (en) * | 2001-10-26 | 2004-06-08 | International Business Machines Corporation | Pitcher-shaped active area for field effect transistor and method of forming same |
US6580109B1 (en) * | 2002-02-01 | 2003-06-17 | Stmicroelectronics, Inc. | Integrated circuit device including two types of photodiodes |
US6646318B1 (en) * | 2002-08-15 | 2003-11-11 | National Semiconductor Corporation | Bandgap tuned vertical color imager cell |
JP2004172335A (ja) | 2002-11-20 | 2004-06-17 | Sony Corp | 固体撮像装置 |
US7279353B2 (en) * | 2003-04-02 | 2007-10-09 | Micron Technology, Inc. | Passivation planarization |
CN1245662C (zh) * | 2003-05-12 | 2006-03-15 | 南亚科技股份有限公司 | 减少透镜像差与图案移位的光罩与方法 |
JP4383959B2 (ja) * | 2003-05-28 | 2009-12-16 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
JP4378108B2 (ja) | 2003-05-28 | 2009-12-02 | キヤノン株式会社 | 光電変換装置およびその製造方法 |
US6949424B2 (en) * | 2003-08-28 | 2005-09-27 | Texas Instruments Incorporated | Single poly-emitter PNP using DWELL diffusion in a BiCMOS technology |
JP4555030B2 (ja) * | 2004-09-02 | 2010-09-29 | 富士フイルム株式会社 | マイクロレンズアレイおよび光学部材並びにマイクロレンズアレイの作製方法 |
US7029944B1 (en) * | 2004-09-30 | 2006-04-18 | Sharp Laboratories Of America, Inc. | Methods of forming a microlens array over a substrate employing a CMP stop |
KR100605814B1 (ko) * | 2004-10-27 | 2006-08-01 | 삼성전자주식회사 | 반사 격자를 이용한 씨모스 이미지 센서 및 그 제조방법 |
KR100660319B1 (ko) * | 2004-12-30 | 2006-12-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지센서 및 그의 제조방법 |
US7419844B2 (en) * | 2006-03-17 | 2008-09-02 | Sharp Laboratories Of America, Inc. | Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer |
KR100767588B1 (ko) * | 2006-12-15 | 2007-10-17 | 동부일렉트로닉스 주식회사 | 수직형 이미지 센서의 제조 방법 |
-
2004
- 2004-12-30 KR KR1020040117181A patent/KR100660319B1/ko not_active IP Right Cessation
-
2005
- 2005-12-13 JP JP2005358615A patent/JP4423255B2/ja not_active Expired - Fee Related
- 2005-12-29 US US11/324,043 patent/US7423307B2/en active Active
- 2005-12-30 CN CNB2005100971158A patent/CN100424884C/zh not_active Expired - Fee Related
- 2005-12-30 DE DE102005063114A patent/DE102005063114B4/de not_active Expired - Fee Related
-
2008
- 2008-08-12 US US12/190,576 patent/US8049257B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009130276A (ja) * | 2007-11-27 | 2009-06-11 | Hitachi Displays Ltd | 光センサ装置および画像表示装置 |
JP2009164385A (ja) * | 2008-01-08 | 2009-07-23 | Fujifilm Corp | 裏面照射型撮像素子 |
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US20060145224A1 (en) | 2006-07-06 |
US7423307B2 (en) | 2008-09-09 |
CN100424884C (zh) | 2008-10-08 |
DE102005063114A1 (de) | 2006-08-17 |
CN1819221A (zh) | 2006-08-16 |
KR20060077669A (ko) | 2006-07-05 |
KR100660319B1 (ko) | 2006-12-22 |
US8049257B2 (en) | 2011-11-01 |
US20080303073A1 (en) | 2008-12-11 |
DE102005063114B4 (de) | 2011-05-12 |
JP4423255B2 (ja) | 2010-03-03 |
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