CN100392832C - 电气装置制造方法 - Google Patents
电气装置制造方法 Download PDFInfo
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- CN100392832C CN100392832C CNB028087933A CN02808793A CN100392832C CN 100392832 C CN100392832 C CN 100392832C CN B028087933 A CNB028087933 A CN B028087933A CN 02808793 A CN02808793 A CN 02808793A CN 100392832 C CN100392832 C CN 100392832C
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Abstract
在本发明的电气装置1的制造方法中,由于将粘结剂12与柔性布线板13一起加热到第一加热温度,在粘度充分降低后,进行半导体芯片11的对位,所以在半导体芯片11被装到粘结剂12上时,没有卷入空气。另外,在正式压焊时,由于粘结剂12被加热到比第一加热温度高的第二加热温度,粘结剂12的粘度增高,所以残留的空洞与多余的粘结剂12一起被挤出。从而,在粘结剂12中空洞消失,得到导通可靠性高的电气装置1。
Description
技术领域
本发明涉及粘结剂,特别是涉及将半导体芯片连接到基板上的技术。
背景技术
迄今,为了将半导体芯片粘接到柔性布线板之类的基板上,使用了热固化性的粘结剂。图9的符号101表示利用粘结剂112将半导体芯片111粘附到基板113上的电气装置。
在与基板113的半导体芯片111相向的面上配置金属布线112。另外,在与半导体芯片111的基板113相向的面上配置凸点状的端子121,并使这些端子121与对置基板113的金属布线122相接。
由于半导体芯片111的端子121与未图示的内部电路连接,所以在图9所示的状态下,经端子121与半导体芯片111的内部电路和基板113的金属布线122电连接。另外,通过加热使粘结剂112固化,基板113与半导体芯片111也经该粘结剂112进行机械式连接。这样,如果使用粘结剂112,则即使不用焊锡,也可将半导体芯片111与基板113连接起来。
在现有技术的粘结工序中,将常温粘结剂112涂敷或贴附到基板113表面后,采用加热了的挤压头将半导体芯片111推压(加热挤压)到粘结剂112上进行粘结,但将粘剂结112涂敷或贴附到基板113时,或将半导体芯片111压到粘结剂112上时,往往有空气卷入,在基板113与粘结剂112之间或半导体芯片111的端子121之间产生空洞(气泡)130。在粘结剂112中有空洞130的情况下,在回流处理等电气装置被加热时,半导体芯片111往往剥离或产生导通不良。
如果降低粘结剂112涂敷时的粘度,则由于基板113或半导体芯片111与粘结剂112的沾润性提高,所以涂敷时的空气卷入量减少,但一旦卷入了的空气在加热挤压时则难以除去。
另一方面,尽管在粘度高的情况下,涂敷时容易卷入空气,而卷入了的空气在加热挤压时容易除去,但还是存在容易产生端子间连接不良的问题。
作为减少空洞的技术,如在特开平5-144873中公开的那样,已知有采用挤压头将半导体芯片111压到常温粘结剂112上后,使挤压头阶梯式地或连续地缓慢升温,对粘结剂112加热的方法。按照该方法,通过使粘结剂112缓慢升温,空洞130变得难以发生。然而,在上述方法中,通过对同一挤压头进行温度调整,无法对多个半导体芯片111连续地进行处理,延长了生产节拍时间,生产率降低了。
另一方面,作为缩短生产节拍时间的技术,已知有在将半导体芯片111装到粘结剂112上的对准工序(暂时压焊工序)和对半导体芯片111加热挤压的粘结工序(正式压焊工序)中采用了各不相同的挤压头,在对准工序中不加热而对位,在粘结工序中一次加热的方法。按照该方法,生产率虽然提高了,但容易发生空洞130。总之,要高效地生产可靠性高的电气装置101是困难的。
发明内容
本发明是为了解决上述现有技术的欠妥之处而进行的,其目的在于提供粘结剂中无空洞、可靠性高的电气装置。
为了解决上述课题,本发明是具有以基板的连接端子与半导体芯片的连接端子互相相向的方式进行对位,将上述半导体芯片压到配置于上述基板上的粘结剂上,对上述半导体芯片一边挤压,一边加热,使上述连接端子彼此之间接触的粘结工序的电气装置制造方法,上述粘结工序具有在将上述粘结剂加热到第一温度的状态下将上述半导体芯片压到上述粘结剂上的暂时压焊工序和对上述半导体芯片一边挤压,一边将上述粘结剂加热到比上述第一温度高的第二温度的正式压焊工序。
本发明是这样的电气装置制造方法,其中,上述第一温度高于上述粘结剂的反应开始温度而且低于上述粘结剂的反应峰值温度。
本发明是这样的电气装置制造方法,其中,上述第二温度高于上述粘结剂的反应峰值温度。
本发明是这样的电气装置制造方法,其中,在上述暂时压焊工序中,将上述基板配置在第一装载台上,将上述第一装载台加热到上述第一温度。
本发明是这样的电气装置制造方法,其中,在上述暂时压焊工序中,在进行上述对位后,将上述半导体芯片压到上述粘结剂上。
本发明是这样的电气装置制造方法,其中,在上述暂时压焊工序中,在将上述半导体芯片压到上述粘结剂时,将上述半导体芯片挤压到上述相向的连接端子彼此之间不至相互接触的程度。
本发明是这样的电气装置制造方法,其中,在上述正式压焊工序中,将上述基板移到与上述第一装载台不同的第二装载台上。
本发明是这样的电气装置制造方法,其中,在上述正式压焊工序中,将可加热的挤压头加热到上述第二温度,将上述挤压头压到上述半导体芯片上。
本发明是这样的电气装置制造方法,其中,在上述正式压焊工序中,在使上述相向的连接端子彼此之间相互接触后,将上述粘结剂加热到上述第二温度。
再有,所谓粘结剂的反应开始温度是在进行粘结剂的差示扫描热分析时得到的DSC(差示扫描量热学)曲线在发热方向从基线上升时的温度,所谓粘结剂的反应峰值温度是该DSC曲线的发热峰值温度。
本发明如上述那样构成,在本发明的暂时压焊工序中,由于在将半导体芯片压到粘结剂上之前粘结剂被加热到第一温度,通过加热使粘结剂的粘度比涂敷时降低,所以在将半导体芯片压到粘结剂上时,粘结剂容易流入半导体芯片的连接端子之间,空气难以卷入。
在该状态下,半导体芯片的连接端子不与基板的连接端子相接,在连接端子之间残留有多余的粘结剂。由于第一温度比粘结剂的反应开始温度高,所以如将粘结剂维持在第一温度,则粘结剂的固化反应加快,但由于第一温度低于粘结剂的反应峰值温度,反应进行速度减慢,粘结剂的反应率保持在2%以上、20%以下的范围。
在该状态下,粘结剂的粘度比涂敷时为高,但并未失去流动性。从而,在正式压焊工序中,如进一步推压半导体芯片,则在半导体芯片的连接端子与基板的连接端子之间残留的多余粘结剂与残留的空洞一起被挤出,半导体芯片的连接端子与基板的连接端子相接。
在连接端子相互之间接触的状态下,如粘结剂升温到第二温度,则粘结剂完全固化,用电学的或机械的方式将半导体芯片与基板连接起来。
在暂时压焊工序中,如使第一装载台加热,则由于可将粘结剂加热到第一温度,所以无需加热对位用的保持机构,作为保持机构可用常温挤压头。另外,只要进行对位,即可加热该挤压头。
附图说明
图1(a)是用于说明本发明的电气装置之一例的制造工序(1)的剖面图。
图1(b)是用于说明本发明的电气装置之一例的制造工序(2)的剖面图。
图1(c)是用于说明本发明的电气装置之一例的制造工序(3)的剖面图。
图1(d)是用于说明本发明的电气装置之一例的制造工序(4)的剖面图。
图2(a)是用于说明本发明的电气装置之一例的制造工序(5)的剖面图。
图2(b)是用于说明本发明的电气装置之一例的制造工序(6)的剖面图。
图2(c)是用于说明本发明的电气装置之一例的制造工序(7)的剖面图。
图3(a)是用于说明本发明的电气装置之另一例的制造工序(1)的剖面图。
图3(b)是用于说明本发明的电气装置之另一例的制造工序(2)的剖面图。
图3(c)是用于说明本发明的电气装置之另一例的制造工序(3)的剖面图。
图4是示出第一例的粘结剂的DSC曲线的图。
图5是示出第一例的粘结剂的温度粘度曲线的图。
图6是示出第二例的粘结剂的温度粘度曲线的图。
图7是示出第三例的粘结剂的温度粘度曲线的图。
图8是用于说明本发明的电气装置的另一例的剖面图。
图9是用于说明现有技术的电气装置的图。
在各图中,符号1、2表示电气装置。符号12、15分别表示粘结剂。符号11表示半导体芯片。符号13表示基板(柔性布线板)。符号21表示半导体芯片的连接端子(凸点)。符号22表示基板的连接端子。符号50表示第一装载台(暂时压焊台)。符号70表示第二装载台(正式压焊台)。符号60表示挤压头(正式压焊头)。
具体实施方式
现说明本发明的实施形态。
首先,将作为热固化性树脂的环氧树脂、由微胶囊化的固化剂构成的潜在固化剂和导电粒子混合在一起,制作后述的表1的ACP、ACF、NCP各栏中示出的组成的粘结剂。在该状态下粘结剂呈膏状。
图1(a)的符号13表示柔性布线板(基板)。在该柔性布线板13的表面上配置金属布线,从金属布线的一部分构成多个连接端子22。这些连接端子22分别露出于柔性布线板13的表面,分别配置于与后述半导体芯片的凸点对应的位置上。如将粘结剂12涂敷于装载后述半导体芯片的位置上,则柔性布线板13的连接端子22被粘结剂12覆盖(图1(b))。
图1(c)的符号50表示暂时压焊台(第一装载台)。在暂时压焊台50的表面附近配置陶瓷加热器51。如果用陶瓷加热器51将暂时压焊台50预先加热到至少是粘结剂12的反应开始温度以上,将柔性布线板13置于未配置连接端子22一侧的面之下,放置于暂时压焊台50的表面上,则柔性布线板13与粘结剂12借助于热传导被加热到反应开始温度以上。在该状态下调整陶瓷加热器51的通电量,使粘结剂12处于反应开始温度以上、反应峰值温度以下的温度(第一温度)。
这时,由于加热而粘结剂12的粘度降低,对粘结剂12的柔性布线板13的沾润性提高,所以在涂敷粘结剂12时被卷入了的气泡(空洞)消失。
图1(d)的符号11表示半导体芯片。在半导体芯片11的一面上配置多个凸点21(连接端子),这些凸点21与半导体芯片11的未图示的内部电路进行电连接。
图1(d)的符号40表示保持机构,如图1(d)所示,在使配置了半导体芯片11的凸点21一侧的面朝下的状态下,利用保持机构40保持半导体芯片11,在使半导体芯片11位于柔性布线板13的上方的状态下,在进行了对位使半导体芯片11的凸点21与柔性布线板13的连接端子22互相相向后,使保持机构40下降,将半导体芯片11装在柔性布线板13上的粘结剂12上。
如将半导体芯片11推压到半导体芯片11的凸点21不至与柔性布线板13的连接端子22相接的程度,则从凸点21的前端表面挤出粘结剂12,粘结剂12便流入邻接的凸点21之间的空隙。这时,由于粘结剂12的粘度因加热而比涂敷时降低,所以在粘结剂12流入凸点21之间时不产生空洞。
图2(a)示出了该状态,在半导体芯片11的凸点21之间空洞消失,粘结剂12被充填其中。另外,在互相相向的凸点21与连接端子22之间残留多余的粘结剂12,凸点21与连接端子22不进行电连接。另外,利用暂时压焊台50的陶瓷加热器51,粘结剂12的温度被维持在第一温度。
通过将粘结剂12的温度维持在第一温度,潜在性固化剂的微胶囊局部地溶解,粘结剂的固化反应缓慢地进行。当粘结剂12的反应率达到2%以上、20%以下的范围时,在将半导体芯片11装到粘结剂12上的状态下,使保持机构退到上方,将柔性布线板13与粘结剂12、半导体芯片11一起从暂时压焊台50移到正式压焊台70(第二装载台)上(图2(b))。
在正式压焊台70的上方,配置正式压焊头(挤压头)60。在正式压焊头60中内置加热器61,正式压焊头60被预先加热到至少超过粘结剂12的反应峰值温度的温度。
在图2(b)所示的状态下,虽然粘结剂12的粘度比涂敷时增高,但其流动性并未消失。
从而,将正式压焊头60压到粘结剂12上的半导体芯片11上,如果一边对正式压焊头60加热,一边施加规定的载重,则多余的粘结剂12与残留的空洞一起从凸点21与连接端子22之间被挤出,在粘结剂12被加热到反应峰值温度以上之前,凸点21被接到连接端子21上。
在该状态下,如果进一步继续加热挤压,利用热传导将粘结剂12加热到反应峰值温度以上(第二温度),则粘结剂12中的潜在性固化剂完全溶解,粘结剂12的热固化反应急剧加快,在凸点21与连接端子22相接的状态下,粘结剂12完全固化。
图2(c)示出了粘结剂12完全固化了的状态的电气装置1。在该电气装置1中,柔性布线板13与半导体芯片11用固化了的粘结剂12不仅进行机械连接,也经凸点21进行电连接。
以上说明了使用膏状粘结剂12的情形,但本发明不限定于此。例如,也包含使本发明中所用的粘结剂半固化至表现出自支撑性的程度的膜状物,或添加固态树脂形成为膜状的物质。
图3(a)的符号15表示上述的膜状粘结剂之一例。如图3(b)所示,在将膜状粘结剂15贴附到配置了柔性布线板13的连接端子22一侧的面上以后,如在与图1(c)~图2(c)所示的工序相同的条件下分别进行暂时压焊工序和正式压焊工序,则得到如图3(c)所示的电气装置2。
[实施例]
将下述表1中所示的环氧树脂、潜在性固化剂和导电粒子分别按下述表1中所示的比例混合,分别制作含有导电粒子的膏状粘结剂(ACP:各向异性导电膏)、含有导电粒子的膜状粘结剂(ACF:各向异性导电膜)和不含导电粒子的膏状粘结剂(NCP:非导电膏)。
表1:粘结剂的组成和配比
*在上述表1中,ACP表示包含导电粒子的膏状粘结剂,ACF表示包含导电粒子的膜状粘结剂,NCP表示不包含导电粒子的膏状粘结剂。
*上述表1中的金属覆膜树脂粒子由在树脂粒子表面上形成镍镀层,又在该表面上形成金镀层的树脂粒子构成。
接着,在上述3种粘结剂之中,对于ACP而言,使用差示扫描热分析仪(精工电子工业(株)公司制,商品名为“DSC200”),以10℃/分钟的升温速度使之从30℃升温至250℃,进行差示扫描热分析。在图4中示出所得到的DSC曲线。
图4的横轴为温度(℃),纵轴为热流(mW),图4的符号D表示DSC曲线。另外,该图的符号B表示基线(底线)。
图4的符号S表示DSC曲线D从基线B上升的点(反应开始点),符号P表示DSC曲线的发热峰值位置(反应峰值点),反应开始点S在70℃,反应峰值点P在115.2℃。由于该DSC曲线D的发热峰与ACP的热固化反应有关,可知在对ACP加热时ACP的固化反应开始的温度为70℃(反应开始温度),固化反应达到峰值的温度(反应峰值温度)约为115℃。另外,在比反应峰值温度高的温度下,发热量急剧减少,固化反应大体结束。再有,这时的发热量:ACP每1mg时为442.9mJ。
此外,采用粘度计(HAAKE公司制,商品名为“RheometerRS75”),测量使ACP以升温速度10℃/分钟从20℃升温至200℃时的粘度变化(粘度测量)。图5示出了从该测量结果得到的曲线,图5的横轴表示温度(℃),纵轴表示粘度(mPa·s)。
图5的符号S1表示与图4的反应开始点S对应的温度(反应开始温度),图5的符号P1表示与图4的反应峰值点P对应的温度(反应峰值温度)。从图5中所示的温度粘度曲线L1可知,加热粘结剂时的粘度在反应开始温度S1以上、反应峰值温度P1以下的范围内变得最低。另外,由于在反应峰值温度P1以上,粘结剂的固化反应加快,所以粘结剂的粘度急剧升高。
另外,关于ACF和NCP,分别测量了使之从20℃升温至200℃时的粘度变化。在图6中记载了ACF的温度粘度曲线L2,在图7中记载了NCP的温度粘度曲线L3。此外,用ACF、NCP进行了差示扫描热分析。在图6中记载了从差示扫描热分析得到的ACF的反应开始温度S2和反应峰值温度P2,在图7中记载了NCP的反应开始温度S3和反应峰值温度P3。
从图6和图7可知,即使是将粘结剂形成为膜状的情况(ACF)或不含有导电粒子的情况(NCP),温度粘度曲线L2、L3的粘度成为最低的温度在反应开始温度S2、S3以上、反应峰值温度P2、P3以下的范围内。从这些结果确认了,当粘结剂为热固化性时,其粘度成为最低的温度在反应开始温度以上、反应峰值温度以下的范围内,而与其种类无关,在反应峰值温度以上,粘结剂的固化反应急剧加快。
接着,将上述3种粘结剂(ACP、ACF、NCP)分别涂敷或贴附在柔性布线板13上,在柔性布线板13装在暂时压焊台50上以后,加热暂时压焊台50,使各粘结剂12的温度上升到下述表2的“第一温度”一栏中所示的温度。接着,在图2(a)~图2(c)的工序中进行正式压焊,制作实施例1~7、比较例1~7的电气装置1。
表2:粘结剂的反应开始温度、反应峰值温度和各评价试验的结果
这里,作为柔性布线板13,采用在厚度20μm的聚酰亚胺膜的表面上配置了厚度12μm的金属布线(镀镍-金的铜布线)的布线板,作为半导体芯片11,采用在6mm见方的正方形形状、厚度0.4mm的芯片表面上配置了镀金凸点(60μm见方的正方形形状、高度20μm)的芯片。再有,在正式压焊工序中加热了的粘结剂12的温度(第二温度)为230℃,在正式压焊工序中所加的载重对每个凸点21为0.6N。
采用这些实施例1~7、比较例1~7的电气装置1,分别进行了下面所示的“反应率”、空洞外观、“初始导通”、“老化后导通”的各评价试验。
[反应率]在制造实施例1~7、比较例1~7的电气装置1的工序中,采用暂时压焊工序后的粘结剂12作为试料,对各试料采用与上述差示扫描热分析相同的方法进行差示扫描热分析,分别求得粘结剂的反应率。
这里,分别采用加热前(涂敷前)的粘结剂作为标准试料。
在假定对标准试料以在进行差示扫描热分析时所测得的试料每1mg的发热量为A1,对试料(暂时压焊后的粘结剂)以在进行差示扫描热分析时所测得的试料每1mg的发热量为A2的情况下,用下式(1)得到的值被取作反应率R%。
R(%)=(1-A2/A1)×100......式(1)
在上述表2中记载了各反应率。
[空洞外观]对于实施例1~7、比较例1~7的电气装置1,用金属显微镜观察与配置了柔性布线板13的半导体芯片11一侧相反的一侧的面,确认在将凸点21与连接端子22相接的部分即连接部的周围的空洞的有无。
这时,假定未观察到比凸点21大的空洞的场合为“○”,观察到比凸点21大的空洞的场合为“×”,进行了评价。在上述表2中记载了这些评价结果。
[初始导通]对于实施例1~7、比较例1~7的电气装置1,分别测量了连接凸点21的2个连接端子22之间的导通电阻值。假定导通电阻值在100mΩ以下的场合为“○”,在100mΩ以上的场合为“×”,进行了评价。在上述表2中记载了这些评价结果。
[老化后导通]将实施例1~7、比较例1~7的电气装置1在121℃、相对湿度100%的高温高湿条件下放置了100小时(老化)后,采用与上述“初始导通”相同的方法测量了导通电阻值。假定导通电阻值在500mΩ以下的场合为“○”,在500mΩ以上的场合为“×”,进行了评价。在上述表2中记载了这些评价结果。
从上述表2可知,在暂时压焊前的粘结剂的加热温度(第一温度)为反应开始温度以上、反应峰值温度以下的实施例1~7的电气装置1中,对各评价试验得到优秀的结果。
另一方面,在暂时压焊前未进行加热的比较例1的电气装置及第温度低于各粘结剂的反应开始温度的比较例2、4、6中,由于暂时压焊前粘结剂的粘度并不充分地低,所以连接部周围的粘结剂中存在大量空洞,其结果是,老化后的导通结果变坏。
另外,在暂时压焊前的温度分别比各粘结剂的反应峰值温度高的比较例3、5、7中,在粘结剂中未观察到大的空洞,但由于在正式压焊前粘结剂的粘度过高,粘结剂无法充分地挤出去,所以在连接端子与凸点之间不能充分地取得导通,在老化前的初始导通阶段被确认为导通不良。
以上说明了将暂时压焊工序与正式压焊工序在各不相同的平台上进行的情况,但本发明却不限定于此,可在同一平台上进行暂时压焊工序和正式压焊工序。另外,将粘结剂涂敷在基板上的工序也可在暂时压焊平台上进行。
另外,以上说明了使暂时压焊平台50升温将粘结剂12加热到第一温度的情况,但本发明却不限定于此,可采用各种加热装置。例如,使保持机构40内内置加热装置,同时借助于在加热炉内进行暂时压焊工序,可将粘结剂12加热到第一温度。
另外,如果使正式压焊平台内内置加热装置,利用加热装置预先加热正式压焊平台,则由于在将柔性布线板13从暂时压焊平台50移到正式压焊平台时,粘结剂12的温度不降低,所以可更加缩短在正式压焊工序中花费的时间。这时,希望正式压焊平台的温度在第二温度以下,如为第一温度左右则更好。
以上说明了将半导体芯11与柔性布线板13连接起来的情况,但本发明却不限定于此,可用于各种电气装置的制造。例如,也可不用柔性布线板而用刚性基板,将刚性基板与半导体芯片连接起来,制作COB(芯片在基板上)。
另外,也可用于TCP(带式载体封装)与LCD(液晶显示器件)的连接。
图8的符号80表示电气装置,电气装置80具有TCP83和LCD81。图8的符号84表示用TCP83的布线的一部分构成的连接端子,图8的符号82表示用LCD81的电极的一部分构成的连接端子。
TCP83与LCD81用与上述图1(a)~图1(d)、图2(a)~图2(c)相同的工序连接起来,连接端子82、84在相互接触的状态下用粘结剂85加以固定。
作为可用于本发明的热固化性树脂,可使用环氧树脂、尿素树脂、蜜胺树脂、酚醛树脂等各种树脂,但如考虑到固化速度及热固化后的粘结剂强度等,最好用环氧树脂。
在使用环氧树脂作为热固化树脂时,最好并用固化剂。作为固化剂可用咪唑类固化剂、聚胺固化剂、酚醛类、异氰酸酯类、聚
硫醇类、酸酐固化剂等各种固化剂。将这些固化剂制成微胶囊,可用作潜在性固化剂。
另外,向粘结剂添加热塑性树脂也是可能的。作为热塑性树脂,可使用苯氧基树脂、聚酯树脂等各种树脂。
也可向本发明中使用的粘结剂中添加消泡剂、着色剂、防老化剂、充填剂、偶联剂等各种添加剂。
工业上的可利用性
在使半导体芯片与基板上的粘结剂相接的暂时压焊时,粘结剂中不发生空洞。另外,即使在暂时压焊后残留有空洞时,为了增高正式压焊时粘结剂的粘度,可用挤压法挤出粘结剂中的空洞。从而,按照本发明,在粘结剂中空洞消失,可得到导通可靠性高的电气装置。
Claims (13)
1.一种电气装置制造方法,它是具有以基板的连接端子与半导体芯片的连接端子互相相向的方式进行对位,将上述半导体芯片压到配置于上述基板上的粘结剂上,对上述半导体芯片一边挤压,一边加热,使上述连接端子彼此之间接触的粘结工序,
而上述粘结工序具有:
在将上述粘结剂加热到第一温度的状态下将上述半导体芯片压到上述粘结剂上的暂时压焊工序;以及
对上述半导体芯片一边挤压,一边将上述粘结剂加热到比上述第一温度高的第二温度的正式压焊工序的电气装置制造方法,其特征在于:
在上述暂时压焊工序中,将上述半导体芯片挤压到如下程度,即使上述半导体芯片的连接端子和上述基板的连接端子接触于粘结剂,使粘结剂位于相向的上述连接端子彼此之间,从而使上述相向的上述连接端子不进行电连接;
而在上述正式压焊工序中,使上述相向的上述连接端子进行电连接。
2.如权利要求1所述的电气装置制造方法,其特征在于:
上述第一温度为上述粘结剂的反应开始温度以上而且低于上述粘结剂的反应峰值温度。
3.如权利要求1所述的电气装置制造方法,其特征在于:
上述第二温度为上述粘结剂的反应峰值温度以上。
4.如权利要求1所述的电气装置制造方法,其特征在于:
在上述暂时压焊工序中,将上述基板配置在第一装载台上,将上述第一装载台加热到上述第一温度。
5.如权利要求2所述的电气装置制造方法,其特征在于:
在上述暂时压焊工序中,将上述基板配置在第一装载台上,将上述第一装载台加热到上述第一温度。
6.如权利要求1所述的电气装置制造方法,其特征在于:
在上述暂时压焊工序中,在进行上述对位后,将上述半导体芯片压到上述粘结剂上。
7.如权利要求2所述的电气装置制造方法,其特征在于:
在上述暂时压焊工序中,在进行上述对位后,将上述半导体芯片压到上述粘结剂上。
8.如权利要求4所述的电气装置制造方法,其特征在于:
上述正式压焊工序是将上述基板移到与上述第一装载台不同的第二装载台上来进行。
9.如权利要求5所述的电气装置制造方法,其特征在于:
上述正式压焊工序是将上述基板移到与上述第一装载台不同的第二装载台上来进行。
10.如权利要求1所述的电气装置制造方法,其特征在于:
在上述正式压焊工序中,将可加热的挤压头加热到上述第二温度,将上述挤压头压到上述半导体芯片上。
11.如权利要求3所述的电气装置制造方法,其特征在于:
在上述正式压焊工序中,将可加热的挤压头加热到上述第二温度,将上述挤压头压到上述半导体芯片上。
12.如权利要求1所述的电气装置制造方法,其特征在于:
在上述正式压焊工序中,在使上述相向的连接端子彼此之间相互接触后,将上述粘结剂加热到上述第二温度。
13.如权利要求3所述的电气装置制造方法,其特征在于:
在上述正式压焊工序中,在使上述相向的连接端子彼此之间相互接触后,将上述粘结剂加热到上述第二温度。
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US20040079464A1 (en) | 2004-04-29 |
JP3665579B2 (ja) | 2005-06-29 |
KR20030080035A (ko) | 2003-10-10 |
KR100790671B1 (ko) | 2007-12-31 |
US7341642B2 (en) | 2008-03-11 |
TW523885B (en) | 2003-03-11 |
CN1505835A (zh) | 2004-06-16 |
HK1064804A1 (en) | 2005-02-04 |
WO2002071469A1 (fr) | 2002-09-12 |
JP2002252254A (ja) | 2002-09-06 |
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