CN100385628C - 半导体晶片和半导体器件的制造工艺 - Google Patents
半导体晶片和半导体器件的制造工艺 Download PDFInfo
- Publication number
- CN100385628C CN100385628C CNB2005100795194A CN200510079519A CN100385628C CN 100385628 C CN100385628 C CN 100385628C CN B2005100795194 A CNB2005100795194 A CN B2005100795194A CN 200510079519 A CN200510079519 A CN 200510079519A CN 100385628 C CN100385628 C CN 100385628C
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- Prior art keywords
- scribe line
- semiconductor wafer
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- scribe
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
- H01L2223/5446—Located in scribe lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Dicing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
Claims (8)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004183892 | 2004-06-22 | ||
JP2004183892 | 2004-06-22 | ||
JP2004235020A JP4377300B2 (ja) | 2004-06-22 | 2004-08-12 | 半導体ウエハおよび半導体装置の製造方法 |
JP2004235020 | 2004-08-12 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1713354A CN1713354A (zh) | 2005-12-28 |
CN100385628C true CN100385628C (zh) | 2008-04-30 |
Family
ID=35481156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2005100795194A Expired - Fee Related CN100385628C (zh) | 2004-06-22 | 2005-06-22 | 半导体晶片和半导体器件的制造工艺 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7554211B2 (zh) |
JP (1) | JP4377300B2 (zh) |
KR (1) | KR100661084B1 (zh) |
CN (1) | CN100385628C (zh) |
TW (1) | TWI293188B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103367324A (zh) * | 2012-04-01 | 2013-10-23 | 上海华虹Nec电子有限公司 | 用于半导体芯片的切割道 |
Families Citing this family (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3962713B2 (ja) * | 2003-09-30 | 2007-08-22 | キヤノン株式会社 | アライメントマークの形成方法、およびデバイスが構成される基板 |
JP4648745B2 (ja) * | 2005-04-12 | 2011-03-09 | セイコーインスツル株式会社 | 金属膜パターニング用レチクルおよびそれを用いた露光法と半導体ウエハ |
US7755207B2 (en) * | 2005-07-27 | 2010-07-13 | Ricoh Company, Ltd. | Wafer, reticle, and exposure method using the wafer and reticle |
US7614800B2 (en) * | 2005-09-30 | 2009-11-10 | Emcore Corporation | Fiducial markings for quality verification of high density circuit board connectors |
US20070077011A1 (en) * | 2005-09-30 | 2007-04-05 | Emcore Corporation | Simple fiducial marking for quality verification of high density circuit board connectors |
US7198988B1 (en) * | 2005-11-16 | 2007-04-03 | Emcore Corporation | Method for eliminating backside metal peeling during die separation |
US7382038B2 (en) * | 2006-03-22 | 2008-06-03 | United Microelectronics Corp. | Semiconductor wafer and method for making the same |
JP4712641B2 (ja) * | 2006-08-09 | 2011-06-29 | 富士通セミコンダクター株式会社 | 半導体ウエハとその試験方法 |
DE102007004953A1 (de) * | 2007-01-26 | 2008-07-31 | Tesa Ag | Heizelement |
US7741196B2 (en) * | 2007-01-29 | 2010-06-22 | Freescale Semiconductor, Inc. | Semiconductor wafer with improved crack protection |
US20080265445A1 (en) * | 2007-04-30 | 2008-10-30 | International Business Machines Corporation | Marks for the Alignment of Wafer-Level Underfilled Silicon Chips and Method to Produce Same |
JP2008311455A (ja) * | 2007-06-15 | 2008-12-25 | Nec Electronics Corp | 半導体装置の耐熱応力評価方法、及び評価素子を有する半導体ウエハ |
JP2009049390A (ja) * | 2007-07-25 | 2009-03-05 | Rohm Co Ltd | 窒化物半導体素子およびその製造方法 |
JP5466820B2 (ja) * | 2007-10-18 | 2014-04-09 | ピーエスフォー ルクスコ エスエイアールエル | 半導体基板、及び半導体装置の製造方法 |
US8680653B2 (en) * | 2007-11-12 | 2014-03-25 | Infineon Technologies Ag | Wafer and a method of dicing a wafer |
US8648444B2 (en) * | 2007-11-29 | 2014-02-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer scribe line structure for improving IC reliability |
JP5460108B2 (ja) * | 2008-04-18 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置及び半導体装置の作製方法 |
JP5309728B2 (ja) * | 2008-06-27 | 2013-10-09 | 富士通セミコンダクター株式会社 | レチクルデータ作成方法及びレチクルデータ作成装置 |
US8796073B2 (en) * | 2008-09-24 | 2014-08-05 | Qualcomm Incorporated | Low cost die-to-wafer alignment/bond for 3d IC stacking |
JP2010225961A (ja) * | 2009-03-25 | 2010-10-07 | Mitsubishi Electric Corp | 半導体素子の製造方法 |
US8039367B2 (en) * | 2009-05-13 | 2011-10-18 | United Microelectronics Corp. | Scribe line structure and method for dicing a wafer |
JP5175803B2 (ja) * | 2009-07-01 | 2013-04-03 | 新光電気工業株式会社 | 半導体装置の製造方法 |
KR101102658B1 (ko) * | 2009-11-27 | 2012-01-04 | 주식회사 하이닉스반도체 | 웨이퍼 및 그 형성 방법 |
CN102157366A (zh) * | 2011-01-31 | 2011-08-17 | 杭州士兰明芯科技有限公司 | 一种减少晶片减薄后翘曲的方法 |
CN102683278A (zh) * | 2011-03-08 | 2012-09-19 | 上海华虹Nec电子有限公司 | 芯片和芯片的分离方法 |
JP5992731B2 (ja) * | 2012-06-07 | 2016-09-14 | 株式会社ディスコ | ウエーハの加工方法 |
US9443807B2 (en) * | 2013-09-06 | 2016-09-13 | Infineon Technologies Ag | Semiconductor device and method for manufacturing a semiconductor device |
US20150069627A1 (en) * | 2013-09-06 | 2015-03-12 | Kabushiki Kaisha Toshiba | Interposer wafer and method of manufacturing same |
KR101646170B1 (ko) | 2014-09-11 | 2016-08-09 | 한국전기연구원 | 계통연계운전 및 독립운전을 수행하는 전력시스템 제어 방법 |
CN104701301B (zh) * | 2015-03-10 | 2018-05-01 | 武汉新芯集成电路制造有限公司 | 一种晶圆对准标记 |
JP6358240B2 (ja) * | 2015-11-19 | 2018-07-18 | トヨタ自動車株式会社 | 半導体装置及び半導体装置の製造方法 |
KR102537526B1 (ko) * | 2016-05-31 | 2023-05-26 | 삼성전자 주식회사 | 반도체 장치 |
JP6815692B2 (ja) * | 2016-12-09 | 2021-01-20 | 株式会社ディスコ | ウェーハの加工方法 |
JP6779574B2 (ja) * | 2016-12-14 | 2020-11-04 | 株式会社ディスコ | インターポーザの製造方法 |
CN107068618B (zh) * | 2017-03-20 | 2021-02-19 | 通富微电子股份有限公司 | 一种半导体圆片级封装方法 |
TWI714865B (zh) * | 2017-06-28 | 2021-01-01 | 矽創電子股份有限公司 | 晶圓結構 |
JP2019054172A (ja) * | 2017-09-15 | 2019-04-04 | 東芝メモリ株式会社 | 半導体装置 |
JP6677232B2 (ja) * | 2017-09-29 | 2020-04-08 | 日亜化学工業株式会社 | 発光装置の製造方法 |
CN108133928B (zh) * | 2017-12-25 | 2020-04-10 | 豪威科技(上海)有限公司 | 划片槽及图像传感器晶圆 |
US11709199B2 (en) | 2018-02-06 | 2023-07-25 | Hitachi High-Tech Corporation | Evaluation apparatus for semiconductor device |
US11391756B2 (en) | 2018-02-06 | 2022-07-19 | Hitachi High-Tech Corporation | Probe module and probe |
CN111557041B (zh) * | 2018-02-06 | 2023-12-26 | 株式会社日立高新技术 | 半导体装置的制造方法 |
US11387130B2 (en) * | 2019-01-25 | 2022-07-12 | Semiconductor Components Industries, Llc | Substrate alignment systems and related methods |
TWI699580B (zh) * | 2019-03-07 | 2020-07-21 | 友達光電股份有限公司 | 陣列基板 |
DE102019204457B4 (de) * | 2019-03-29 | 2024-01-25 | Disco Corporation | Substratbearbeitungsverfahren |
EP3799112B1 (en) * | 2019-09-30 | 2024-02-21 | IMEC vzw | Method for dicing a semiconductor substrate into a plurality of dies |
IT201900024436A1 (it) * | 2019-12-18 | 2021-06-18 | St Microelectronics Srl | Procedimento per tagliare substrati di semiconduttore e prodotto a semiconduttore corrispondente |
KR20220007443A (ko) | 2020-07-10 | 2022-01-18 | 삼성전자주식회사 | 반도체 패키지 |
KR20220099333A (ko) * | 2021-01-06 | 2022-07-13 | 에스케이하이닉스 주식회사 | 반도체 장치 |
CN115097691B (zh) * | 2022-08-29 | 2022-12-02 | 合肥晶合集成电路股份有限公司 | 一种掩模板及形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5051807A (en) * | 1987-04-07 | 1991-09-24 | Seiko Epson Corporation | Integrated semiconductor structure with incorporated alignment markings |
US5496777A (en) * | 1993-08-26 | 1996-03-05 | Oki Electric Industry Co., Ltd. | Method of arranging alignment marks |
JP2001035776A (ja) * | 1999-07-22 | 2001-02-09 | Seiko Epson Corp | 半導体装置の製造方法及びレチクル |
CN1380692A (zh) * | 2001-04-12 | 2002-11-20 | 日本电气株式会社 | 具有测试元件组元件的半导体器件 |
US6713843B2 (en) * | 2002-01-28 | 2004-03-30 | Amic Technology Corporation | Scribe lines for increasing wafer utilizable area |
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US5096855A (en) * | 1988-05-23 | 1992-03-17 | U.S. Philips Corporation | Method of dicing semiconductor wafers which produces shards less than 10 microns in size |
JPH01304721A (ja) | 1988-06-01 | 1989-12-08 | Mitsubishi Electric Corp | 標識を有する半導体基板 |
JPH0217657A (ja) | 1988-07-05 | 1990-01-22 | Mitsubishi Electric Corp | 半導体集積回路 |
JPH02101758A (ja) * | 1988-10-11 | 1990-04-13 | Hitachi Ltd | 半導体装置の製造方法 |
KR980012183A (ko) * | 1996-07-25 | 1998-04-30 | 김광호 | 웨이퍼 스크라이브 라인에 형성된 테스트용 딜레이 소자 |
JPH1197645A (ja) * | 1997-09-19 | 1999-04-09 | Nec Corp | 半導体記憶装置 |
KR19990053079A (ko) * | 1997-12-23 | 1999-07-15 | 윤종용 | 인식 마크가 형성된 반도체 웨이퍼 및 그 인식 마크를 이용한 웨이퍼 절삭 방법 |
JPH11233458A (ja) | 1998-02-18 | 1999-08-27 | Hitachi Ltd | 半導体素子の製造方法およびその製造に用いる半導体ウエハ |
JP2000124158A (ja) * | 1998-10-13 | 2000-04-28 | Mitsubishi Electric Corp | 半導体ウェハ及び半導体装置 |
JP3065309B1 (ja) * | 1999-03-11 | 2000-07-17 | 沖電気工業株式会社 | 半導体装置の製造方法 |
JP2000340746A (ja) | 1999-05-26 | 2000-12-08 | Yamaha Corp | 半導体装置 |
JP2001076997A (ja) | 1999-09-01 | 2001-03-23 | Sharp Corp | 半導体装置の製造方法 |
JP4307664B2 (ja) * | 1999-12-03 | 2009-08-05 | 株式会社ルネサステクノロジ | 半導体装置 |
JP2002176140A (ja) | 2000-12-06 | 2002-06-21 | Seiko Epson Corp | 半導体集積回路ウェハ |
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JP2003007608A (ja) * | 2001-06-27 | 2003-01-10 | Canon Inc | アライメント方法、露光装置およびデバイス製造方法 |
US6596562B1 (en) * | 2002-01-03 | 2003-07-22 | Intel Corporation | Semiconductor wafer singulation method |
JP2003320466A (ja) | 2002-05-07 | 2003-11-11 | Disco Abrasive Syst Ltd | レーザビームを使用した加工機 |
JP4422463B2 (ja) * | 2003-11-07 | 2010-02-24 | 株式会社ディスコ | 半導体ウエーハの分割方法 |
JP4550457B2 (ja) * | 2004-03-26 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP2006140294A (ja) * | 2004-11-11 | 2006-06-01 | Fujitsu Ltd | 半導体基板、半導体装置の製造方法及び半導体装置の試験方法 |
JP2007214243A (ja) * | 2006-02-08 | 2007-08-23 | Renesas Technology Corp | 半導体装置の製造方法 |
-
2004
- 2004-08-12 JP JP2004235020A patent/JP4377300B2/ja not_active Expired - Fee Related
-
2005
- 2005-06-14 KR KR1020050051027A patent/KR100661084B1/ko active IP Right Grant
- 2005-06-15 US US11/152,092 patent/US7554211B2/en not_active Expired - Fee Related
- 2005-06-21 TW TW094120623A patent/TWI293188B/zh not_active IP Right Cessation
- 2005-06-22 CN CNB2005100795194A patent/CN100385628C/zh not_active Expired - Fee Related
-
2009
- 2009-05-13 US US12/465,349 patent/US7759223B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US5051807A (en) * | 1987-04-07 | 1991-09-24 | Seiko Epson Corporation | Integrated semiconductor structure with incorporated alignment markings |
US5496777A (en) * | 1993-08-26 | 1996-03-05 | Oki Electric Industry Co., Ltd. | Method of arranging alignment marks |
JP2001035776A (ja) * | 1999-07-22 | 2001-02-09 | Seiko Epson Corp | 半導体装置の製造方法及びレチクル |
CN1380692A (zh) * | 2001-04-12 | 2002-11-20 | 日本电气株式会社 | 具有测试元件组元件的半导体器件 |
US6713843B2 (en) * | 2002-01-28 | 2004-03-30 | Amic Technology Corporation | Scribe lines for increasing wafer utilizable area |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103367324A (zh) * | 2012-04-01 | 2013-10-23 | 上海华虹Nec电子有限公司 | 用于半导体芯片的切割道 |
Also Published As
Publication number | Publication date |
---|---|
US7759223B2 (en) | 2010-07-20 |
JP2006041449A (ja) | 2006-02-09 |
US7554211B2 (en) | 2009-06-30 |
KR100661084B1 (ko) | 2006-12-26 |
JP4377300B2 (ja) | 2009-12-02 |
TWI293188B (en) | 2008-02-01 |
CN1713354A (zh) | 2005-12-28 |
US20050282360A1 (en) | 2005-12-22 |
KR20060046444A (ko) | 2006-05-17 |
US20090227088A1 (en) | 2009-09-10 |
TW200605206A (en) | 2006-02-01 |
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