US3918081A
(en)
*
|
1968-04-23 |
1975-11-04 |
Philips Corp |
Integrated semiconductor device employing charge storage and charge transport for memory or delay line
|
NL6808352A
(de)
*
|
1968-06-14 |
1969-12-16 |
|
|
US3997883A
(en)
*
|
1968-10-08 |
1976-12-14 |
The National Cash Register Company |
LSI random access memory system
|
US3599180A
(en)
*
|
1968-11-29 |
1971-08-10 |
Gen Instrument Corp |
Random access read-write memory system having data refreshing capabilities and memory cell therefor
|
US3643235A
(en)
*
|
1968-12-30 |
1972-02-15 |
Ibm |
Monolithic semiconductor memory
|
US3582909A
(en)
*
|
1969-03-07 |
1971-06-01 |
North American Rockwell |
Ratioless memory circuit using conditionally switched capacitor
|
GB1296067A
(de)
*
|
1969-03-21 |
1972-11-15 |
|
|
US3533089A
(en)
*
|
1969-05-16 |
1970-10-06 |
Shell Oil Co |
Single-rail mosfet memory with capacitive storage
|
US3614749A
(en)
*
|
1969-06-02 |
1971-10-19 |
Burroughs Corp |
Information storage device
|
US3585613A
(en)
*
|
1969-08-27 |
1971-06-15 |
Ibm |
Field effect transistor capacitor storage cell
|
US3636530A
(en)
*
|
1969-09-10 |
1972-01-18 |
Litton Systems Inc |
Nonvolatile direct storage bistable circuit
|
US3614753A
(en)
*
|
1969-11-10 |
1971-10-19 |
Shell Oil Co |
Single-rail solid-state memory with capacitive storage
|
US3713114A
(en)
*
|
1969-12-18 |
1973-01-23 |
Ibm |
Data regeneration scheme for stored charge storage cell
|
US3653002A
(en)
*
|
1970-03-02 |
1972-03-28 |
Ncr Co |
Nonvolatile memory cell
|
US3654623A
(en)
*
|
1970-03-12 |
1972-04-04 |
Signetics Corp |
Binary memory circuit with coupled short term and long term storage means
|
US3656119A
(en)
*
|
1970-04-24 |
1972-04-11 |
Gen Instrument Corp |
Memory utilizing the non-linear input capacitance of an mos device
|
US3691535A
(en)
*
|
1970-06-15 |
1972-09-12 |
Sperry Rand Corp |
Solid state memory array
|
FR2112024B1
(de)
*
|
1970-07-02 |
1973-11-16 |
Commissariat Energie Atomique |
|
US3685027A
(en)
*
|
1970-08-19 |
1972-08-15 |
Cogar Corp |
Dynamic mos memory array chip
|
US3902186A
(en)
*
|
1970-10-28 |
1975-08-26 |
Gen Electric |
Surface charge transistor devices
|
NL165601C
(nl)
*
|
1970-11-27 |
1981-04-15 |
Philips Nv |
Geintegreerd capacitief matrixgeheugen.
|
US3818463A
(en)
*
|
1970-12-17 |
1974-06-18 |
Ferranti Ltd |
Semiconductor information storage devices
|
JPS5024207B1
(de)
*
|
1970-12-29 |
1975-08-14 |
|
|
CA1019442A
(en)
*
|
1971-01-14 |
1977-10-18 |
Rca Corporation |
Charge coupled random access memory using semiconductor bit line
|
US3678475A
(en)
*
|
1971-02-01 |
1972-07-18 |
Ibm |
Read only memory and method of using same
|
US3720922A
(en)
*
|
1971-03-17 |
1973-03-13 |
Rca Corp |
Charge coupled memory
|
US3751722A
(en)
*
|
1971-04-30 |
1973-08-07 |
Standard Microsyst Smc |
Mos integrated circuit with substrate containing selectively formed resistivity regions
|
FR2137069B1
(de)
*
|
1971-05-12 |
1976-03-19 |
Commissariat Energie Atomique |
|
US3744036A
(en)
*
|
1971-05-24 |
1973-07-03 |
Intel Corp |
Electrically programmable read only memory array
|
US3740731A
(en)
*
|
1971-08-02 |
1973-06-19 |
Texas Instruments Inc |
One transistor dynamic memory cell
|
US3740732A
(en)
*
|
1971-08-12 |
1973-06-19 |
Texas Instruments Inc |
Dynamic data storage cell
|
US3729722A
(en)
*
|
1971-09-17 |
1973-04-24 |
Gte Automatic Electric Lab Inc |
Dynamic mode integrated circuit memory with self-initiating refresh means
|
BE789501A
(fr)
*
|
1971-09-30 |
1973-03-29 |
Siemens Ag |
Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur
|
US3765000A
(en)
*
|
1971-11-03 |
1973-10-09 |
Honeywell Inf Systems |
Memory storage cell with single selection line and single input/output line
|
US3781827A
(en)
*
|
1971-11-24 |
1973-12-25 |
Gen Electric |
Device for storing information and providing an electric readout
|
US3705419A
(en)
*
|
1971-12-20 |
1972-12-05 |
Ibm |
Silicon gate fet-niobium oxide diode-memory cell
|
GB1415516A
(en)
*
|
1972-02-25 |
1975-11-26 |
Ultra Electronics Ltd |
Capacitive computer circuits
|
GB1357515A
(en)
*
|
1972-03-10 |
1974-06-26 |
Matsushita Electronics Corp |
Method for manufacturing an mos integrated circuit
|
US3771148A
(en)
*
|
1972-03-31 |
1973-11-06 |
Ncr |
Nonvolatile capacitive memory cell
|
US3755793A
(en)
*
|
1972-04-13 |
1973-08-28 |
Ibm |
Latent image memory with single-device cells of two types
|
US3798616A
(en)
*
|
1972-04-14 |
1974-03-19 |
North American Rockwell |
Strobe driver including a memory circuit
|
US3719932A
(en)
*
|
1972-04-27 |
1973-03-06 |
Sperry Rand Corp |
Bit organized integrated mnos memory circuit with dynamic decoding and store-restore circuitry
|
US3761901A
(en)
*
|
1972-06-28 |
1973-09-25 |
Ncr |
Nonvolatile memory cell
|
US3827034A
(en)
*
|
1972-09-14 |
1974-07-30 |
Ferranti Ltd |
Semiconductor information storage devices
|
IT993090B
(it)
*
|
1972-11-01 |
1975-09-30 |
Ibm |
Memoria a transistori bipolari con immagazzinamento capacitivo
|
US3841926A
(en)
*
|
1973-01-02 |
1974-10-15 |
Ibm |
Integrated circuit fabrication process
|
US3811076A
(en)
*
|
1973-01-02 |
1974-05-14 |
Ibm |
Field effect transistor integrated circuit and memory
|
US3882326A
(en)
*
|
1973-12-26 |
1975-05-06 |
Ibm |
Differential amplifier for sensing small signals
|
US3886468A
(en)
*
|
1973-12-20 |
1975-05-27 |
Ibm |
High gain amplifier
|
US3959781A
(en)
*
|
1974-11-04 |
1976-05-25 |
Intel Corporation |
Semiconductor random access memory
|
DE2454427C2
(de)
*
|
1974-11-16 |
1982-04-29 |
Ibm Deutschland Gmbh, 7000 Stuttgart |
Assoziativspeicher
|
US3916390A
(en)
*
|
1974-12-31 |
1975-10-28 |
Ibm |
Dynamic memory with non-volatile back-up mode
|
JPS619741B2
(de)
*
|
1975-02-20 |
1986-03-25 |
Fujitsu Ltd |
|
US4012757A
(en)
*
|
1975-05-05 |
1977-03-15 |
Intel Corporation |
Contactless random-access memory cell and cell pair
|
US3979734A
(en)
*
|
1975-06-16 |
1976-09-07 |
International Business Machines Corporation |
Multiple element charge storage memory cell
|
JPS525224A
(en)
*
|
1975-07-02 |
1977-01-14 |
Hitachi Ltd |
1trs-type memory cell
|
JPS5279679A
(en)
*
|
1975-12-26 |
1977-07-04 |
Toshiba Corp |
Semiconductor memory device
|
US4295264A
(en)
*
|
1975-12-29 |
1981-10-20 |
Texas Instruments Incorporated |
Method of making integrated circuit MOS capacitor using implanted region to change threshold
|
US4240092A
(en)
*
|
1976-09-13 |
1980-12-16 |
Texas Instruments Incorporated |
Random access memory cell with different capacitor and transistor oxide thickness
|
JPS5496379A
(en)
*
|
1976-02-02 |
1979-07-30 |
Tdk Corp |
Semiconductor memory device
|
US4183040A
(en)
*
|
1976-02-09 |
1980-01-08 |
International Business Machines Corporation |
MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes
|
US4075045A
(en)
*
|
1976-02-09 |
1978-02-21 |
International Business Machines Corporation |
Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
|
US4151610A
(en)
*
|
1976-03-16 |
1979-04-24 |
Tokyo Shibaura Electric Co., Ltd. |
High density semiconductor memory device formed in a well and having more than one capacitor
|
US4125933A
(en)
*
|
1976-07-08 |
1978-11-21 |
Burroughs Corporation |
IGFET Integrated circuit memory cell
|
US5434438A
(en)
*
|
1976-09-13 |
1995-07-18 |
Texas Instruments Inc. |
Random access memory cell with a capacitor
|
US5168075A
(en)
*
|
1976-09-13 |
1992-12-01 |
Texas Instruments Incorporated |
Random access memory cell with implanted capacitor region
|
US4172282A
(en)
*
|
1976-10-29 |
1979-10-23 |
International Business Machines Corporation |
Processor controlled memory refresh
|
US4112575A
(en)
*
|
1976-12-20 |
1978-09-12 |
Texas Instruments Incorporated |
Fabrication methods for the high capacity ram cell
|
US4072976A
(en)
*
|
1976-12-28 |
1978-02-07 |
Hughes Aircraft Company |
Gate protection device for MOS circuits
|
US4188671A
(en)
*
|
1977-01-24 |
1980-02-12 |
Bell Telephone Laboratories, Incorporated |
Switched-capacitor memory
|
JPS5399736A
(en)
*
|
1977-02-10 |
1978-08-31 |
Toshiba Corp |
Semiconductor memory unit
|
DE2807181C2
(de)
*
|
1977-02-21 |
1985-11-28 |
Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, Miyagi |
Halbleiterspeichervorrichtung
|
DE2720533A1
(de)
*
|
1977-05-06 |
1978-11-09 |
Siemens Ag |
Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
|
JPS5819141B2
(ja)
*
|
1977-07-28 |
1983-04-16 |
富士通株式会社 |
半導体装置
|
US4249194A
(en)
*
|
1977-08-29 |
1981-02-03 |
Texas Instruments Incorporated |
Integrated circuit MOS capacitor using implanted region to change threshold
|
JPS5461429A
(en)
*
|
1977-10-26 |
1979-05-17 |
Hitachi Ltd |
Dynamic mis memory circuit
|
US4219834A
(en)
*
|
1977-11-11 |
1980-08-26 |
International Business Machines Corporation |
One-device monolithic random access memory and method of fabricating same
|
US4152779A
(en)
*
|
1978-04-06 |
1979-05-01 |
Texas Instruments Incorporated |
MOS ram cell having improved refresh time
|
JPS6044752B2
(ja)
*
|
1978-04-24 |
1985-10-05 |
日本電気株式会社 |
ダイナミツクメモリ
|
JPS5522882A
(en)
*
|
1978-08-30 |
1980-02-18 |
Tdk Corp |
Semiconductor device
|
JPS5562760A
(en)
*
|
1978-08-30 |
1980-05-12 |
Tdk Corp |
Semiconductor device
|
JPS5522581A
(en)
*
|
1978-08-30 |
1980-02-18 |
Tdk Corp |
Semi-conductor device
|
US4533843A
(en)
*
|
1978-09-07 |
1985-08-06 |
Texas Instruments Incorporated |
High performance dynamic sense amplifier with voltage boost for row address lines
|
US4748349A
(en)
*
|
1978-09-22 |
1988-05-31 |
Texas Instruments Incorporated |
High performance dynamic sense amplifier with voltage boost for row address lines
|
DE2855118C2
(de)
*
|
1978-12-20 |
1981-03-26 |
IBM Deutschland GmbH, 70569 Stuttgart |
Dynamischer FET-Speicher
|
JPS5623771A
(en)
*
|
1979-08-01 |
1981-03-06 |
Hitachi Ltd |
Semiconductor memory
|
JPS5847862B2
(ja)
*
|
1979-08-30 |
1983-10-25 |
富士通株式会社 |
半導体記憶装置及びその製造方法
|
JPS6037620B2
(ja)
*
|
1979-12-11 |
1985-08-27 |
株式会社東芝 |
半導体記憶装置
|
USRE32236E
(en)
*
|
1979-12-26 |
1986-08-26 |
International Business Machines Corporation |
One device field effect transistor (FET) AC stable random access memory (RAM) array
|
US4319342A
(en)
*
|
1979-12-26 |
1982-03-09 |
International Business Machines Corporation |
One device field effect transistor (FET) AC stable random access memory (RAM) array
|
US4300210A
(en)
*
|
1979-12-27 |
1981-11-10 |
International Business Machines Corp. |
Calibrated sensing system
|
JPS5696854A
(en)
*
|
1979-12-29 |
1981-08-05 |
Fujitsu Ltd |
Semiconductor memory device
|
JPS56100463A
(en)
*
|
1980-01-14 |
1981-08-12 |
Toshiba Corp |
Semiconductor memory device
|
US4335450A
(en)
*
|
1980-01-30 |
1982-06-15 |
International Business Machines Corporation |
Non-destructive read out field effect transistor memory cell system
|
US4240845A
(en)
*
|
1980-02-04 |
1980-12-23 |
International Business Machines Corporation |
Method of fabricating random access memory device
|
US4287576A
(en)
*
|
1980-03-26 |
1981-09-01 |
International Business Machines Corporation |
Sense amplifying system for memories with small cells
|
US4608751A
(en)
*
|
1980-04-07 |
1986-09-02 |
Texas Instruments Incorporated |
Method of making dynamic memory array
|
US4301519A
(en)
*
|
1980-05-02 |
1981-11-17 |
International Business Machines Corporation |
Sensing technique for memories with small cells
|
US4397075A
(en)
*
|
1980-07-03 |
1983-08-09 |
International Business Machines Corporation |
FET Memory cell structure and process
|
US4409722A
(en)
*
|
1980-08-29 |
1983-10-18 |
International Business Machines Corporation |
Borderless diffusion contact process and structure
|
JPS5660052A
(en)
*
|
1980-10-20 |
1981-05-23 |
Toshiba Corp |
Semiconductor memory device
|
US4423490A
(en)
*
|
1980-10-27 |
1983-12-27 |
Burroughs Corporation |
JFET Dynamic memory
|
US4363110A
(en)
*
|
1980-12-22 |
1982-12-07 |
International Business Machines Corp. |
Non-volatile dynamic RAM cell
|
US4413329A
(en)
*
|
1980-12-24 |
1983-11-01 |
International Business Machines Corporation |
Dynamic memory cell
|
US4511911A
(en)
*
|
1981-07-22 |
1985-04-16 |
International Business Machines Corporation |
Dense dynamic memory cell structure and process
|
US4459609A
(en)
*
|
1981-09-14 |
1984-07-10 |
International Business Machines Corporation |
Charge-stabilized memory
|
DE3173745D1
(en)
*
|
1981-10-30 |
1986-03-20 |
Ibm Deutschland |
Fet memory
|
US4445201A
(en)
*
|
1981-11-30 |
1984-04-24 |
International Business Machines Corporation |
Simple amplifying system for a dense memory array
|
US4432072A
(en)
*
|
1981-12-31 |
1984-02-14 |
International Business Machines Corporation |
Non-volatile dynamic RAM cell
|
US4471471A
(en)
*
|
1981-12-31 |
1984-09-11 |
International Business Machines Corporation |
Non-volatile RAM device
|
US4446535A
(en)
*
|
1981-12-31 |
1984-05-01 |
International Business Machines Corporation |
Non-inverting non-volatile dynamic RAM cell
|
US4506351A
(en)
*
|
1982-06-23 |
1985-03-19 |
International Business Machines Corporation |
One-device random access memory having enhanced sense signal
|
JPS592365A
(ja)
*
|
1982-06-28 |
1984-01-07 |
Fujitsu Ltd |
ダイナミツク型半導体記憶装置
|
US4493056A
(en)
*
|
1982-06-30 |
1985-01-08 |
International Business Machines Corporation |
RAM Utilizing offset contact regions for increased storage capacitance
|
JPS602782B2
(ja)
*
|
1982-06-30 |
1985-01-23 |
富士通株式会社 |
半導体記憶装置
|
JPH0612619B2
(ja)
*
|
1982-09-22 |
1994-02-16 |
株式会社日立製作所 |
半導体メモリ装置
|
US4542340A
(en)
*
|
1982-12-30 |
1985-09-17 |
Ibm Corporation |
Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells
|
JPS59161061A
(ja)
*
|
1983-02-10 |
1984-09-11 |
Fujitsu Ltd |
半導体記憶装置
|
US5359216A
(en)
*
|
1983-02-23 |
1994-10-25 |
Texas Instruments Incorporated |
DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
|
US4574365A
(en)
*
|
1983-04-18 |
1986-03-04 |
International Business Machines Corporation |
Shared access lines memory cells
|
US4642491A
(en)
*
|
1983-06-24 |
1987-02-10 |
International Business Machines Corporation |
Single transistor driver circuit
|
JPS60209996A
(ja)
*
|
1984-03-31 |
1985-10-22 |
Toshiba Corp |
半導体記憶装置
|
US4609429A
(en)
*
|
1984-07-02 |
1986-09-02 |
International Business Machines Corporation |
Process for making a small dynamic memory cell structure
|
US4652898A
(en)
*
|
1984-07-19 |
1987-03-24 |
International Business Machines Corporation |
High speed merged charge memory
|
US4694561A
(en)
*
|
1984-11-30 |
1987-09-22 |
American Telephone And Telegraph Company, At&T Bell Laboratories |
Method of making high-performance trench capacitors for DRAM cells
|
US4648073A
(en)
*
|
1984-12-31 |
1987-03-03 |
International Business Machines Corporation |
Sequential shared access lines memory cells
|
JPH0682800B2
(ja)
*
|
1985-04-16 |
1994-10-19 |
株式会社東芝 |
半導体記憶装置
|
WO1987000690A2
(en)
*
|
1985-07-25 |
1987-01-29 |
American Telephone & Telegraph Company |
High-performance dram arrays including trench capacitors
|
JPS6241094U
(de)
*
|
1985-08-30 |
1987-03-11 |
|
|
US4704368A
(en)
*
|
1985-10-30 |
1987-11-03 |
International Business Machines Corporation |
Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor
|
US4675982A
(en)
*
|
1985-10-31 |
1987-06-30 |
International Business Machines Corporation |
Method of making self-aligned recessed oxide isolation regions
|
US4751558A
(en)
*
|
1985-10-31 |
1988-06-14 |
International Business Machines Corporation |
High density memory with field shield
|
US4811067A
(en)
*
|
1986-05-02 |
1989-03-07 |
International Business Machines Corporation |
High density vertically structured memory
|
US4679302A
(en)
*
|
1986-05-12 |
1987-07-14 |
Northern Telecom Limited |
Double polysilicon integrated circuit process
|
JPS62115768A
(ja)
*
|
1986-06-13 |
1987-05-27 |
Nec Corp |
集積回路装置
|
USRE33972E
(en)
*
|
1986-07-15 |
1992-06-23 |
International Business Machines Corporation |
Two square memory cells
|
US4769786A
(en)
*
|
1986-07-15 |
1988-09-06 |
International Business Machines Corporation |
Two square memory cells
|
JPS6332877A
(ja)
*
|
1986-07-25 |
1988-02-12 |
松下電工株式会社 |
リ−ルタツプ
|
US4785337A
(en)
*
|
1986-10-17 |
1988-11-15 |
International Business Machines Corporation |
Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
|
US4871688A
(en)
*
|
1988-05-02 |
1989-10-03 |
Micron Technology, Inc. |
Sequence of etching polysilicon in semiconductor memory devices
|
JPH023187A
(ja)
*
|
1988-06-09 |
1990-01-08 |
Toshiba Corp |
不揮発性半導体メモリ
|
JP2682021B2
(ja)
*
|
1988-06-29 |
1997-11-26 |
富士通株式会社 |
半導体メモリ装置
|
US5001525A
(en)
*
|
1989-03-27 |
1991-03-19 |
International Business Machines Corporation |
Two square memory cells having highly conductive word lines
|
US5134616A
(en)
*
|
1990-02-13 |
1992-07-28 |
International Business Machines Corporation |
Dynamic ram with on-chip ecc and optimized bit and word redundancy
|
GB9007791D0
(en)
*
|
1990-04-06 |
1990-06-06 |
Foss Richard C |
High voltage boosted wordline supply charge pump and regulator for dram
|
GB9007790D0
(en)
*
|
1990-04-06 |
1990-06-06 |
Lines Valerie L |
Dynamic memory wordline driver scheme
|
US5307356A
(en)
*
|
1990-04-16 |
1994-04-26 |
International Business Machines Corporation |
Interlocked on-chip ECC system
|
US5024993A
(en)
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