CH466435A - Transistor - Google Patents

Transistor

Info

Publication number
CH466435A
CH466435A CH1265867A CH1265867A CH466435A CH 466435 A CH466435 A CH 466435A CH 1265867 A CH1265867 A CH 1265867A CH 1265867 A CH1265867 A CH 1265867A CH 466435 A CH466435 A CH 466435A
Authority
CH
Switzerland
Prior art keywords
transistor
Prior art date
Application number
CH1265867A
Other languages
English (en)
Inventor
Eberhard Guenther
Richard Dr Wiesner
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH466435A publication Critical patent/CH466435A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
CH1265867A 1966-09-12 1967-09-11 Transistor CH466435A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0105814 1966-09-12

Publications (1)

Publication Number Publication Date
CH466435A true CH466435A (de) 1968-12-15

Family

ID=7526888

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1265867A CH466435A (de) 1966-09-12 1967-09-11 Transistor

Country Status (8)

Country Link
US (1) US3525909A (de)
AT (1) AT273233B (de)
CH (1) CH466435A (de)
DE (1) DE1564705A1 (de)
FR (1) FR1551937A (de)
GB (1) GB1140643A (de)
NL (1) NL6710964A (de)
SE (1) SE355262B (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL169122C (nl) * 1970-02-26 1982-06-01 Toyo Electronics Ind Corp Halfgeleiderelement, omvattende een halfgeleiderplaatje met een door een isolerende laag bedekt hoofdvlak en met elektroden die zich ononderbroken uitstrekken over delen van de isolerende laag en aangrenzende delen van zijvlakken van het halfgeleiderplaatje, alsmede werkwijze voor het bevestigen van het halfgeleiderelement op een van aansluitklemmen voorziene montageplaat.
US3865624A (en) * 1970-06-29 1975-02-11 Bell Telephone Labor Inc Interconnection of electrical devices
JP2513010B2 (ja) * 1988-12-27 1996-07-03 日本電気株式会社 半導体集積回路の入力保護装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3204321A (en) * 1962-09-24 1965-09-07 Philco Corp Method of fabricating passivated mesa transistor without contamination of junctions
DE1231033B (de) * 1963-09-13 1966-12-22 Siemens Ag Druckempfindliches Halbleiterbauelement mit drei Zonen abwechselnd entgegengesetztenLeitungstyps und einem Stempel auf einer Zone
US3316466A (en) * 1963-10-07 1967-04-25 Svu Silnoproude Elektrotechnik Integrated two transistor semiconductor device
NL134388C (de) * 1964-05-15 1900-01-01
US3336508A (en) * 1965-08-12 1967-08-15 Trw Semiconductors Inc Multicell transistor
US3426253A (en) * 1966-05-26 1969-02-04 Us Army Solid state device with reduced leakage current at n-p junctions over which electrodes pass

Also Published As

Publication number Publication date
NL6710964A (de) 1968-03-13
GB1140643A (en) 1969-01-22
FR1551937A (de) 1969-01-03
SE355262B (de) 1973-04-09
DE1564705A1 (de) 1970-05-14
US3525909A (en) 1970-08-25
AT273233B (de) 1969-08-11

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