SE418427B - Transistor-minneselement - Google Patents
Transistor-minneselementInfo
- Publication number
- SE418427B SE418427B SE7114300A SE1430071A SE418427B SE 418427 B SE418427 B SE 418427B SE 7114300 A SE7114300 A SE 7114300A SE 1430071 A SE1430071 A SE 1430071A SE 418427 B SE418427 B SE 418427B
- Authority
- SE
- Sweden
- Prior art keywords
- memory element
- transistor memory
- transistor
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
- G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/26—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US391980A US3355721A (en) | 1964-08-25 | 1964-08-25 | Information storage |
Publications (1)
Publication Number | Publication Date |
---|---|
SE418427B true SE418427B (sv) | 1981-05-25 |
Family
ID=23548772
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE11045/65A SE343972B (sv) | 1964-08-25 | 1965-08-24 | |
SE7114300A SE418427B (sv) | 1964-08-25 | 1971-11-09 | Transistor-minneselement |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE11045/65A SE343972B (sv) | 1964-08-25 | 1965-08-24 |
Country Status (6)
Country | Link |
---|---|
US (1) | US3355721A (sv) |
JP (2) | JPS4921448B1 (sv) |
DE (1) | DE1474457B2 (sv) |
FR (1) | FR1455322A (sv) |
GB (1) | GB1121526A (sv) |
SE (2) | SE343972B (sv) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3447137A (en) * | 1965-05-13 | 1969-05-27 | Bunker Ramo | Digital memory apparatus |
US3491345A (en) * | 1966-10-05 | 1970-01-20 | Rca Corp | Cryoelectric memories employing loop cells |
US3518635A (en) * | 1967-08-22 | 1970-06-30 | Bunker Ramo | Digital memory apparatus |
USRE30744E (en) * | 1967-08-22 | 1981-09-15 | Bunker Ramo Corporation | Digital memory apparatus |
US3533087A (en) * | 1967-09-15 | 1970-10-06 | Rca Corp | Memory employing transistor storage cells |
US3535699A (en) * | 1968-01-15 | 1970-10-20 | Ibm | Complenmentary transistor memory cell using leakage current to sustain quiescent condition |
US3480959A (en) * | 1968-05-07 | 1969-11-25 | United Aircraft Corp | Range gated integrator |
US3549911A (en) * | 1968-12-05 | 1970-12-22 | Rca Corp | Variable threshold level field effect memory device |
DE1955364C3 (de) * | 1969-11-04 | 1976-01-08 | Messerschmitt-Boelkow-Blohm Gmbh, 8000 Muenchen | Dreidimensionales Speichersystem |
US3601629A (en) * | 1970-02-06 | 1971-08-24 | Westinghouse Electric Corp | Bidirectional data line driver circuit for a mosfet memory |
US3662351A (en) * | 1970-03-30 | 1972-05-09 | Ibm | Alterable-latent image monolithic memory |
US3699539A (en) * | 1970-12-16 | 1972-10-17 | North American Rockwell | Bootstrapped inverter memory cell |
US3708689A (en) * | 1971-10-27 | 1973-01-02 | Motorola Inc | Voltage level translating circuit |
JPS50132752U (sv) * | 1974-04-16 | 1975-10-31 | ||
JPS5238640U (sv) * | 1975-09-11 | 1977-03-18 | ||
JPS5259934U (sv) * | 1975-10-30 | 1977-04-30 | ||
JPS5259933U (sv) * | 1975-10-30 | 1977-04-30 | ||
JPS52134149U (sv) * | 1976-04-07 | 1977-10-12 | ||
JPS537850U (sv) * | 1976-07-07 | 1978-01-23 | ||
JPS5511098U (sv) * | 1979-04-16 | 1980-01-24 | ||
JPS55137495U (sv) * | 1980-04-01 | 1980-09-30 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL264275A (sv) * | 1960-05-02 | |||
US3168649A (en) * | 1960-08-05 | 1965-02-02 | Bell Telephone Labor Inc | Shift register employing bistable multiregion semiconductive devices |
BE632998A (sv) * | 1962-05-31 | |||
CA759138A (en) * | 1963-05-20 | 1967-05-16 | F. Rogers Gordon | Field effect transistor circuit |
-
1964
- 1964-08-25 US US391980A patent/US3355721A/en not_active Expired - Lifetime
-
1965
- 1965-08-06 GB GB33862/65A patent/GB1121526A/en not_active Expired
- 1965-08-20 DE DE19651474457 patent/DE1474457B2/de active Pending
- 1965-08-23 FR FR29135A patent/FR1455322A/fr not_active Expired
- 1965-08-24 SE SE11045/65A patent/SE343972B/xx unknown
- 1965-08-24 JP JP40051872A patent/JPS4921448B1/ja active Pending
-
1971
- 1971-04-14 JP JP46023786A patent/JPS5037101B1/ja active Pending
- 1971-11-09 SE SE7114300A patent/SE418427B/sv unknown
Also Published As
Publication number | Publication date |
---|---|
JPS4921448B1 (sv) | 1974-06-01 |
DE1474457B2 (de) | 1972-01-20 |
GB1121526A (en) | 1968-07-31 |
DE1474457A1 (de) | 1969-11-20 |
SE343972B (sv) | 1972-03-20 |
JPS5037101B1 (sv) | 1975-11-29 |
US3355721A (en) | 1967-11-28 |
FR1455322A (fr) | 1966-04-01 |
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