BR112012013851A2 - dispositivo semicondutor e método para produzir o mesmo - Google Patents
dispositivo semicondutor e método para produzir o mesmoInfo
- Publication number
- BR112012013851A2 BR112012013851A2 BR112012013851A BR112012013851A BR112012013851A2 BR 112012013851 A2 BR112012013851 A2 BR 112012013851A2 BR 112012013851 A BR112012013851 A BR 112012013851A BR 112012013851 A BR112012013851 A BR 112012013851A BR 112012013851 A2 BR112012013851 A2 BR 112012013851A2
- Authority
- BR
- Brazil
- Prior art keywords
- film
- connection part
- semiconductor device
- connecting part
- same
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000010408 film Substances 0.000 abstract 9
- 238000002161 passivation Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13458—Terminal pads
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
''dispositivo semicondutor e método para produzir o mesmo''. a presente invenção refere-se a um dispositivo semicondutor inclui: um transitor de película fina que tem uma linha de porta (3a), uma primeira película isolante (5), uma camada de semicondutor de óxido em forma de ilha (7a), uma segunda película isolante (9), uma linha de fonte (13as), um eletrodo de dreno (13ad), e uma película de passivação; e uma parte de terminal que tem uma primeira parte de conexão (3c) feita da mesma película condutora que a linha de porta, uma segunda parte de conexão (13c) feita da mesma película condutora que a linha de fonte e o eletrodo de dreno, e uma terceira parte de conexão (19c) formada na segunda parte de conexão. a segunda parte de conexão fica em contato com a primeira parte de conexão de dentro de uma primeira abertura (11c) fornecida nas primeiras e segundas películas isolantes; a terceira parte de conexão (19c) fica em contato com a segunda parte de conexão dentro de uma segunda abertura (17c) fornecida na película de passivação; e a segunda parte de conexão (13c) cobre faces de extremidade da primeira e segunda películas isolantes dentro da primeira abertura (11c), mas não cobre uma face de extremidade da película de passivação (15) dentro da segunda abertura (17c). como resultado, a forma cônica de um orifício de contato da parte de terminal pode ser controlada com uma alta precisão.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009279826 | 2009-12-09 | ||
PCT/JP2010/071728 WO2011070981A1 (ja) | 2009-12-09 | 2010-12-03 | 半導体装置およびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
BR112012013851A2 true BR112012013851A2 (pt) | 2019-09-24 |
Family
ID=44145526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BR112012013851A BR112012013851A2 (pt) | 2009-12-09 | 2010-12-03 | dispositivo semicondutor e método para produzir o mesmo |
Country Status (8)
Country | Link |
---|---|
US (1) | US8685803B2 (pt) |
EP (1) | EP2511896B1 (pt) |
JP (2) | JP5095864B2 (pt) |
KR (1) | KR101273831B1 (pt) |
CN (1) | CN102652330B (pt) |
BR (1) | BR112012013851A2 (pt) |
RU (1) | RU2503085C1 (pt) |
WO (1) | WO2011070981A1 (pt) |
Families Citing this family (68)
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KR20030080119A (ko) * | 2002-04-03 | 2003-10-11 | 유종학 | 창출의 새로운 추출방법 |
WO2011155125A1 (ja) * | 2010-06-08 | 2011-12-15 | シャープ株式会社 | 薄膜トランジスタ基板及びそれを備えた液晶表示装置並びに薄膜トランジスタ基板の製造方法 |
CN102947871B (zh) * | 2010-06-24 | 2014-03-26 | 夏普株式会社 | 半导体装置及其制造方法 |
WO2012133103A1 (ja) * | 2011-03-30 | 2012-10-04 | シャープ株式会社 | アクティブマトリクス基板、表示装置、およびアクティブマトリクス基板の製造方法 |
US8928708B2 (en) * | 2011-07-15 | 2015-01-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for driving the display device |
KR20130010834A (ko) * | 2011-07-19 | 2013-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
JP5613635B2 (ja) * | 2011-07-21 | 2014-10-29 | 株式会社ジャパンディスプレイ | 表示装置 |
US8716708B2 (en) * | 2011-09-29 | 2014-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
CN102646676B (zh) * | 2011-11-03 | 2015-06-10 | 京东方科技集团股份有限公司 | 一种tft阵列基板 |
US8829528B2 (en) * | 2011-11-25 | 2014-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including groove portion extending beyond pixel electrode |
KR102072244B1 (ko) * | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
JP6026433B2 (ja) * | 2012-01-11 | 2016-11-16 | シャープ株式会社 | 半導体装置、表示装置、ならびに半導体装置の製造方法 |
WO2013108783A1 (ja) | 2012-01-19 | 2013-07-25 | シャープ株式会社 | カラーフィルタ基板、表示素子、及びカラーフィルタ基板の製造方法 |
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-
2010
- 2010-12-03 RU RU2012128513/28A patent/RU2503085C1/ru not_active IP Right Cessation
- 2010-12-03 JP JP2011545195A patent/JP5095864B2/ja active Active
- 2010-12-03 EP EP10835902.7A patent/EP2511896B1/en not_active Not-in-force
- 2010-12-03 CN CN201080056072.8A patent/CN102652330B/zh active Active
- 2010-12-03 US US13/514,081 patent/US8685803B2/en active Active
- 2010-12-03 BR BR112012013851A patent/BR112012013851A2/pt not_active IP Right Cessation
- 2010-12-03 KR KR1020127017540A patent/KR101273831B1/ko active IP Right Grant
- 2010-12-03 WO PCT/JP2010/071728 patent/WO2011070981A1/ja active Application Filing
-
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- 2012-09-19 JP JP2012206132A patent/JP5518966B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20120241750A1 (en) | 2012-09-27 |
RU2503085C1 (ru) | 2013-12-27 |
EP2511896B1 (en) | 2019-05-08 |
KR20120089773A (ko) | 2012-08-13 |
CN102652330B (zh) | 2014-09-17 |
EP2511896A4 (en) | 2016-08-31 |
JPWO2011070981A1 (ja) | 2013-04-22 |
US8685803B2 (en) | 2014-04-01 |
CN102652330A (zh) | 2012-08-29 |
WO2011070981A1 (ja) | 2011-06-16 |
EP2511896A1 (en) | 2012-10-17 |
JP5095864B2 (ja) | 2012-12-12 |
JP2013051421A (ja) | 2013-03-14 |
KR101273831B1 (ko) | 2013-06-11 |
JP5518966B2 (ja) | 2014-06-11 |
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