WO2012133103A1 - アクティブマトリクス基板、表示装置、およびアクティブマトリクス基板の製造方法 - Google Patents
アクティブマトリクス基板、表示装置、およびアクティブマトリクス基板の製造方法 Download PDFInfo
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- WO2012133103A1 WO2012133103A1 PCT/JP2012/057325 JP2012057325W WO2012133103A1 WO 2012133103 A1 WO2012133103 A1 WO 2012133103A1 JP 2012057325 W JP2012057325 W JP 2012057325W WO 2012133103 A1 WO2012133103 A1 WO 2012133103A1
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- 239000000758 substrate Substances 0.000 title claims abstract description 148
- 239000011159 matrix material Substances 0.000 title claims abstract description 123
- 238000004519 manufacturing process Methods 0.000 title claims description 45
- 239000010410 layer Substances 0.000 claims abstract description 397
- 239000011241 protective layer Substances 0.000 claims abstract description 183
- 239000004065 semiconductor Substances 0.000 claims abstract description 119
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 46
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 46
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims description 90
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000002184 metal Substances 0.000 claims description 53
- 239000003990 capacitor Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 22
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- 238000010030 laminating Methods 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 239000012212 insulator Substances 0.000 abstract 3
- 238000000206 photolithography Methods 0.000 description 31
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 15
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 15
- 239000010408 film Substances 0.000 description 13
- 239000004973 liquid crystal related substance Substances 0.000 description 13
- 239000010936 titanium Substances 0.000 description 13
- 229910052719 titanium Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 7
- 230000000149 penetrating effect Effects 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000005401 electroluminescence Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
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- 238000009413 insulation Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
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Definitions
- the present invention relates to an active matrix substrate having thin film transistors and a display device including such an active matrix substrate.
- an active matrix liquid crystal display device or an organic EL (Electro Luminescence) display device is an active matrix substrate (“TFT”) in which a thin film transistor (hereinafter also referred to as “TFT”) is formed as a switching element for each pixel.
- TFT active matrix substrate
- an oxide semiconductor film such as IGZO (InGaZnO x ) instead of a silicon semiconductor such as amorphous silicon as a semiconductor layer of a TFT.
- IGZO InGaZnO x
- a silicon semiconductor such as amorphous silicon
- an oxide semiconductor TFT can operate at a higher speed than an amorphous silicon TFT.
- the oxide semiconductor film can be formed by a simpler process than the polycrystalline silicon film, the oxide semiconductor film is easily applied to an apparatus that requires a large area.
- Patent Documents 1 and 2 describe examples of oxide semiconductor TFTs.
- the oxide semiconductor TFT disclosed in Patent Document 1 is an oxide TFT including a semiconductor layer mainly composed of zinc oxide.
- the manufacturing method includes a step of forming an oxide semiconductor thin film layer mainly composed of zinc oxide on a substrate, and a step of forming a first insulating film on the oxide semiconductor thin film layer. And forming a second insulating film on the first insulating film, and oxidizing the first insulating film before forming the second insulating layer.
- the oxide semiconductor TFT of Patent Document 2 includes an oxide semiconductor thin film layer mainly composed of zinc oxide (ZnO) disposed between a source electrode and a drain electrode, and an upper surface and side surfaces of the oxide semiconductor thin film layer.
- a gate insulating film comprising a silicon-based insulating film that covers the first gate insulating film covering the upper surface of the oxide semiconductor thin film layer, and a front surface of the first gate insulating film and a side surface of the oxide semiconductor thin film layer.
- the second gate insulating film is covered.
- FIG. 19 shows pixels 120 in the active matrix substrate 100, signal line terminals (also referred to as “S terminals”) 160, gate line terminals (also referred to as “G terminals”) 170, and auxiliary capacitance line terminals (also referred to as “Cs terminals”). ) Is a plan view showing the configuration of 180.
- the active matrix substrate 100 includes a plurality of pixels 120 arranged in a matrix, a plurality of scanning lines 112 and a plurality of signal lines 114 extending orthogonally to each other, and a plurality of auxiliary capacitance lines (“ 116) (also referred to as “Cs line”).
- each pixel 120 has a pixel electrode 121 and an auxiliary capacitor portion 140. Near the intersection of the scanning line 112 and the signal line 114, a TFT 130 corresponding to the pixel 120 is disposed. An S terminal 160, a G terminal 170, and a Cs terminal 180 are disposed at the ends of the signal line 114, the scanning line 112, and the Cs line 116, respectively.
- 20A to 20D are cross-sectional views showing the configurations of the TFT 130, the auxiliary capacitor 140, the S terminal 160, and the G terminal 170, respectively, taken along the line AA ′ in FIG.
- a B ′ cross section, a CC ′ cross section, and a DD ′ cross section are shown.
- the TFT 130 includes a semiconductor layer 131, a source electrode 132, a drain electrode 133, and a gate electrode 112a.
- the semiconductor layer 131 is an oxide semiconductor layer made of IGZO or the like.
- the gate electrode 112 a is a part of the scanning line 112.
- a gate insulating layer 142 is formed over the gate electrode 112 a, and a source electrode 132, a drain electrode 133, and a semiconductor layer 131 are formed over the gate insulating layer 142.
- the semiconductor layer 131 is formed so as to cover each part of the source electrode 132 and the drain electrode 133.
- a source connection line 136 that connects the source electrode 132 and the signal line 114 and a drain connection line 137 that connects the drain electrode 133 and the pixel electrode 121 are formed on the gate insulating layer 142.
- the drain connection line 137 is connected to the pixel electrode 121 by a contact hole 135 formed so as to penetrate the first protective layer 144 and the second protective layer 146.
- the source connection line 136 and the drain connection line 137 have a three-layer structure including a lower layer 151, an intermediate layer 152, and an upper layer 153.
- the lower layer 151, the intermediate layer 152, and the upper layer 153 are each made of, for example, Ti (titanium), Al (aluminum), and MoN (molybdenum nitride).
- the auxiliary capacitance unit 140 includes an auxiliary capacitance electrode 116a, a gate insulating layer 142 formed on the auxiliary capacitance electrode 116a, and Cs formed on the gate insulating layer 142.
- the counter electrode (auxiliary capacitor counter electrode) 147, the first protective layer 144 formed on the Cs counter electrode 147, the second protective layer 146 stacked on the first protective layer 144, and the second protective layer 146 The pixel electrode 121 is formed thereon.
- the Cs counter electrode 147 is connected to the pixel electrode 121 through a contact hole 145 formed so as to penetrate the first protective layer 144 and the second protective layer 146.
- the auxiliary capacitance electrode 116 a is a part of the Cs line 116.
- a storage capacitor is formed by the storage capacitor electrode 116a, the Cs counter electrode 147, and the portion of the gate insulating layer 142 sandwiched between the two electrodes.
- the Cs counter electrode 147 has a three-layer structure including a lower layer 151, an intermediate layer 152, and an upper layer 153, similarly to the source connection line 136 and the drain connection line 137.
- the S terminal 160 includes a gate insulating layer 142, a signal line 114 disposed on the gate insulating layer 142, and a first protective layer stacked on the signal line 114. 144, a second protective layer 146 laminated on the first protective layer 144, and an upper wiring 161 formed on the second protective layer 146.
- the signal line 114 is connected to the upper wiring 161 through a contact hole 165 formed so as to penetrate the first protective layer 144 and the second protective layer 146. Similar to the source connection line 136 and the like, the signal line 114 has a three-layer structure including a lower layer 151, an intermediate layer 152, and an upper layer 153.
- the G terminal 170 includes a scanning line 112, a gate insulating layer 142 sequentially formed on the scanning line 112, a first protective layer 144, a second protective layer 146, and It consists of an upper wiring 171.
- the scanning line 112 is connected to the upper wiring 171 by a contact hole 175 formed so as to penetrate the gate insulating layer 142, the first protective layer 144, and the second protective layer 146.
- 21 (a) to 21 (d) and FIGS. 22 (e) to 22 (g) are cross sections taken along the line AA ′ of the TFT 130, the BB ′ cross section of the auxiliary capacitor 140 in FIG. 19, and the CC of the S terminal 160.
- the configuration of the 'cross section and the DD' cross section of the G terminal 170 is shown.
- first mask process first mask process
- ITO Indium Tin Oxide
- the drain connection line 137, the Cs counter electrode 147, and the upper layer 153 of the signal line 114 serve as an etch stopper, and in the contact holes 135, 145, and 165, the drain connection line 137, the Cs counter electrode 147, Etching is performed so that the upper layer 153 of each of the signal lines 114 is exposed.
- the scanning line 112 is exposed in the contact hole 175.
- a transparent conductive material such as ITO is laminated on the second protective layer 146 by sputtering. At this time, the transparent conductive material is also laminated in the contact holes 135, 145, 165, and 175. Thereafter, the transparent electrode material is patterned by photolithography to form the pixel electrode 121, the upper wiring 161, and the upper wiring 171 (sixth mask process).
- the active matrix substrate 100 of the second reference example basically has the same configuration as that of the active matrix substrate 100 according to the first reference example, except that the second protective layer 146 is not provided. Therefore, the same constituent elements are given the same reference numerals, and the description thereof is omitted.
- planar configuration of the active matrix substrate 100 of the second reference example is the same as that shown in FIG.
- FIGS. 23A to 23D are cross-sectional views showing the configurations of the TFT 130, the auxiliary capacitor 140, the S terminal 160, and the G terminal 170 in the active matrix substrate 100 of the second reference example.
- 19 represents an AA ′ section, a BB ′ section, a CC ′ section, and a DD ′ section.
- the pixel electrode 121 is formed on the first protective layer 144 made of silicon oxide, and the drain connection line 137 is a contact hole penetrating the first protective layer 144. 135 is connected to the pixel electrode 121.
- the pixel electrode 121 is formed on the first protective layer 144, and the Cs counter electrode 147 has a contact hole 135 penetrating the first protective layer 144. Is connected to the pixel electrode 121.
- the signal line 114 is connected to the upper wiring 161 by a contact hole 165 penetrating the first protective layer 144.
- the scanning line 112 is connected to the upper wiring 171 by a contact hole 175 penetrating the gate insulating layer 142 and the first protective layer 144.
- 24A and 24B are cross-sectional views taken along the line AA ′ of the TFT 130 in FIG. 19, the BB ′ cross section of the auxiliary capacitor 140, the CC ′ cross section of the S terminal 160, and the D ⁇ of the G terminal 170. This shows the configuration of the D ′ cross section.
- a first protective layer 144 is formed by stacking silicon oxide on the stacked structure. Thereafter, the first protective layer 144 is patterned by a photolithography method so that the contact hole 135, the drain connection line 137, the Cs counter electrode 147, the signal line 114 at the S terminal 160, and the scanning line 112 at the G terminal 170, respectively. 145, 165, and 175 are formed (fifth mask process). Etching is performed so that the upper layer 153 of the drain connection line 137, the Cs counter electrode 147, and the signal line 114 is exposed in the contact holes 135, 145, and 165. In the G terminal 170, the scanning line 112 is exposed in the contact hole 175.
- a transparent conductive material is laminated on the first protective layer 144 by sputtering. At this time, the transparent conductive material is also laminated in the contact holes 135, 145, 165, and 175. Thereafter, the transparent electrode material is patterned by photolithography to form the pixel electrode 121, the upper wiring 161, and the upper wiring 171 (sixth mask process).
- an oxide semiconductor layer is formed, a protective layer is formed thereon, and then an annealing process is performed at a high temperature of about 300 to 350 ° C.
- silicon oxide and silicon nitride are used for the protective layer on the semiconductor layer as in the first reference example, or when only silicon nitride is used for the protective layer, it is caused by hydrogen contained in the silicon nitride during annealing.
- the deterioration of the TFT characteristics specifically includes an increase in leakage current from the source electrode and the drain electrode and a decrease in the threshold value of the TFT.
- silicon oxide for the protective layer as in the second reference example.
- silicon oxide is not excellent in moisture resistance, and the underlying source connection line, drain connection line, signal line, Cs counter electrode and the like are corroded.
- the active matrix substrate 100 of the first reference example and the second reference example is manufactured, six photolithography processes (six mask processes) are required, and the manufacturing efficiency is not high and the manufacturing cost is high. was there.
- the present invention has been made in view of the above, and an object thereof is to provide an active matrix substrate provided with an oxide semiconductor TFT having high TFT characteristics. Another object of the present invention is to provide an active matrix substrate having excellent TFT characteristics and excellent durability such as source connection lines, drain connection lines, and signal lines. Another object of the present invention is to provide such an active matrix substrate with high production efficiency. Another object of the present invention is to provide a display device such as a liquid crystal display device or an organic EL display device provided with such an active matrix substrate, or an electronic apparatus.
- An active matrix substrate is an active matrix substrate including a thin film transistor including an oxide semiconductor, and includes a gate electrode, a source electrode, and a drain electrode of the thin film transistor, a signal line that supplies a voltage to the source electrode, A scanning line for supplying a switching signal of the thin film transistor; and a semiconductor layer made of an oxide semiconductor connected to the source electrode and the drain electrode, and (A) a gate insulating layer made of silicon oxide on the gate electrode
- the source electrode, the drain electrode, and the semiconductor layer are formed on the gate insulating layer, and a first protective layer made of silicon nitride is formed on the gate insulating layer without covering the semiconductor layer. And a second protective layer made of silicon oxide is formed on the semiconductor layer.
- a first protective layer made of silicon nitride is formed without covering the semiconductor layer, and a gate insulating layer made of silicon oxide is formed on the semiconductor layer.
- the gate electrode is formed on the gate insulating layer above the channel portion, and a second protective layer made of silicon nitride is formed on the gate electrode.
- the active matrix substrate includes a source connection line that connects the signal line and the source electrode, and is formed so that the signal line and the source connection line are in contact with the first protective layer. Yes.
- the signal line is formed on an electrode layer made of a transparent electrode material
- the source electrode is made of the transparent electrode material
- the source connection line is formed on a part of the source electrode.
- the active matrix substrate includes a plurality of pixels each including a pixel electrode, and the source electrode, the drain electrode, and the pixel electrode are formed in the same layer with the same transparent electrode material. .
- the active matrix substrate includes an auxiliary capacitance formed in each of the plurality of pixels, and an auxiliary capacitance electrode of the auxiliary capacitance is opposed to the pixel electrode with the gate insulating layer interposed therebetween. Has been placed.
- the active matrix substrate includes a signal line terminal including a part of the signal line, and the signal line penetrates the first protective layer and the second protective layer in the signal line terminal. A contact hole reaching to is formed.
- the active matrix substrate includes a gate line terminal including a part of the scanning line, and a contact hole reaching the scanning line through at least the second protective layer in the gate line terminal. Is formed.
- a display device is a display device including the above active matrix substrate.
- An active matrix substrate manufacturing method is an active matrix substrate manufacturing method including a thin film transistor having an oxide semiconductor, the step of forming an electrode layer to be a source electrode and a drain electrode of the thin film transistor, and the electrode A step of laminating a metal layer on the layer; a step of forming a first protective layer made of silicon nitride on the metal layer; and patterning the first protective layer and the metal layer to form the electrode layer On the exposed electrode layer, the semiconductor layer, and the remaining first protective layer, a step of exposing a portion of the electrode layer; a step of forming a semiconductor layer made of an oxide semiconductor on the electrode layer; Forming a second protective layer or a gate insulating layer made of silicon oxide.
- a second protective layer made of silicon oxide is formed on the exposed electrode layer, the semiconductor layer, and the remaining first protective layer, and before forming the electrode layer, the thin film transistor Forming a gate electrode, and forming a gate insulating layer on the gate electrode.
- a gate insulating layer made of silicon oxide is formed on the exposed electrode layer, the semiconductor layer, and the remaining first protective layer, and after forming the gate insulating layer, the semiconductor layer A step of forming a gate electrode of the thin film transistor on the gate insulating layer above and a step of forming a second protective layer made of silicon nitride on the gate electrode.
- the metal layer forms a signal line that supplies a voltage to the source electrode, and a source connection line that connects the signal line and the source electrode.
- the electrode layer is made of a transparent electrode material, and a pixel electrode is formed from the electrode layer.
- the silicon oxide layer is formed without forming the silicon nitride layer on the oxide semiconductor layer, or the silicon oxide layer is formed on the oxide semiconductor layer, and the gate is formed thereon. Since the silicon nitride layer is formed with the electrode interposed therebetween, an active matrix substrate including an oxide semiconductor TFT having excellent TFT characteristics can be provided.
- the silicon oxide layer is formed on the oxide semiconductor layer, and the silicon nitride layer is formed on the wiring such as the signal line and the source connection line.
- An active matrix substrate having excellent characteristics can be provided.
- the active matrix substrate can be formed with fewer mask processes, the active matrix substrate can be provided with high manufacturing efficiency.
- a high-quality display device using the above active matrix substrate can be provided with high manufacturing efficiency.
- FIGS. 4A to 4D are cross-sectional views schematically showing the configuration of the TFT 30, the auxiliary capacitance unit 40, the signal line terminal 60, and the gate line terminal 70 of the active matrix substrate 1 according to the first embodiment.
- FIGS. 4A to 4D are cross-sectional views illustrating a method for manufacturing the active matrix substrate 1 according to the first embodiment.
- FIGS. 4E to 4G are cross-sectional views illustrating a method for manufacturing the active matrix substrate 1 according to the first embodiment.
- FIGS. 5E to 5G are cross-sectional views illustrating a method for manufacturing the active matrix substrate 1 according to the second embodiment.
- FIG. 5E to 5G are cross-sectional views schematically showing the configurations of the TFT 30, the auxiliary capacitance unit 40, the signal line terminal 60, and the gate line terminal 70 of the active matrix substrate 1 according to the third embodiment.
- FIG. 1 is sectional drawing showing the manufacturing method of the active matrix substrate 1 by Embodiment 3.
- FIG. FIGS. 5E to 5G are cross-sectional views illustrating a method for manufacturing the active matrix substrate 1 according to the third embodiment.
- (A) to (d) are cross-sectional views schematically showing the configuration of the TFT 30, the auxiliary capacitor section 40, the signal line terminal 60, and the gate line terminal 70 of the active matrix substrate 1 according to the fourth embodiment.
- (A)-(c) is sectional drawing showing the manufacturing method of the active matrix substrate 1 by Embodiment 4.
- FIG. 1 is sectional drawing showing the manufacturing method of the active matrix substrate 1 by Embodiment 3.
- FIGS. 7A to 7D are cross-sectional views illustrating a method for manufacturing the active matrix substrate 1 according to the fifth embodiment.
- FIGS. 5E to 5G are cross-sectional views illustrating a method for manufacturing the active matrix substrate 1 according to the fifth embodiment. It is the perspective view which represented typically the structure of the liquid crystal display device 1000 by this invention. 2 is a plan view schematically showing the configuration of an active matrix substrate 1 of a liquid crystal display device 1000.
- FIG. 2 is a plan view schematically showing a configuration of a display area DA of the active matrix substrate 1.
- FIG. FIG. 3 is a plan view schematically showing a configuration of an active matrix substrate 100 according to a first reference example and a second reference example.
- (A)-(d) is sectional drawing which represented typically the structure of TFT130, the auxiliary capacitance part 140, the S terminal 160, and the G terminal 170 in the active matrix substrate 100 of the 1st reference example.
- (A)-(d) is sectional drawing which represented typically the manufacturing method of the active matrix substrate 100 of a 1st reference example.
- (E)-(g) is sectional drawing which represented typically the manufacturing method of the active matrix substrate 100 of a 1st reference example.
- (A)-(d) is sectional drawing which represented typically the structure of TFT130, the auxiliary capacitance part 140, the signal line terminal 160, and the gate line terminal 170 in the active matrix substrate 100 of the 2nd reference example.
- (A) And (b) is sectional drawing which represented typically the manufacturing method of the active matrix substrate 100 of a 2nd reference example.
- the active matrix substrate of the present invention is a TFT substrate on which an oxide semiconductor TFT is formed, and includes a wide variety of TFT substrates for organic EL display devices, electronic devices, etc. in addition to TFT substrates for liquid crystal display devices as will be described later.
- FIG. 1 is a plan view showing the configuration of the pixels 20, signal line terminals (S terminals) 60, gate line terminals (G terminals) 70, and auxiliary capacitance line terminals (Cs terminals) 80 in the active matrix substrate 1.
- S terminals signal line terminals
- G terminals gate line terminals
- Cs terminals auxiliary capacitance line terminals
- the active matrix substrate 1 includes a plurality of pixels 20 arranged in a matrix, a plurality of scanning lines 12 and a plurality of signal lines 14 extending orthogonally to each other, and a plurality of auxiliary capacitance lines (Cs) extending in parallel to the plurality of scanning lines 12. Line) 16.
- each pixel 20 has a pixel electrode 21 and an auxiliary capacitance unit 40.
- a TFT 30 corresponding to the pixel 20 is disposed near the intersection of the scanning line 12 and the signal line 14.
- a switching signal of the TFT 30 is supplied by the scanning line 12, and a display signal is supplied by the signal line 14 to the source electrode 32 via the source connection line 36 of the TFT 30.
- An S terminal 60, a G terminal 70, and a Cs terminal 80 are disposed at the ends of the signal line 14, the scanning line 12, and the Cs line 16, respectively.
- FIGS. 2A to 2D are cross-sectional views showing the configurations of the TFT 30, the auxiliary capacitor section 40, the S terminal 60, and the G terminal 70, respectively, taken along the line AA ′ in FIG. A B ′ cross section, a CC ′ cross section, and a DD ′ cross section are shown.
- the TFT 30 includes a semiconductor layer 31, a source electrode 32, a drain electrode 33, and a gate electrode 12a.
- the semiconductor layer 31 is an oxide semiconductor layer made of IGZO or the like.
- the gate electrode 12 a is a part of the scanning line 12.
- the gate electrode 12a and the scanning line 12 have, for example, a four-layer structure made of Al, Ti, TiN, and ITO that are sequentially stacked.
- a gate insulating layer 42 made of silicon oxide is formed on the gate electrode 12 a, and a source electrode 32, a drain electrode 33, a semiconductor layer 31, and a pixel electrode 21 are formed on the gate insulating layer 42.
- the semiconductor layer 31 is formed so as to cover a part of each of the source electrode 32 and the drain electrode 33, and a channel layer of the TFT 30 is formed between both electrodes.
- a source connection line 36 that connects the source electrode 32 and the signal line 14 is formed on the gate insulating layer 42.
- the source connection line 36 is formed on the end of the source electrode 32 opposite to the semiconductor layer 31.
- the source connection line 36 has a four-layer structure of a first layer 51, a second layer 52, a third layer 53, and a fourth layer 54 that are sequentially stacked.
- the first layer 51, the second layer 52, the third layer 53, and the fourth layer 54 are made of, for example, MoN, Al, MoN, and ITO, respectively.
- the source connection line 36 may be a single layer or a plurality of layers using these metals or other metals.
- the source electrode 32, the drain electrode 33, and the pixel electrode 21 are made of a transparent electrode material such as ITO, and are formed in the same layer.
- the drain electrode 33 and the pixel electrode 21 are integrally formed on the gate insulating layer 42.
- the source connection line 36 and the signal line 14 are formed on a layer made of a transparent electrode material.
- a first protective layer 44 made of silicon nitride and a second protective layer 46 made of silicon oxide are formed on the gate insulating layer 42.
- the first protective layer 44 covers the source connection line 36, but does not cover the semiconductor layer 31, the portion of the source electrode 32 that does not overlap with the source connection line 36, the drain electrode 33, and the pixel electrode 21.
- the second protective layer 46 covers the first protective layer 44, the semiconductor layer 31, a portion of the source electrode 32, the drain electrode 33, and the pixel electrode 21 that do not overlap the source connection line 36.
- the auxiliary capacitance section 40 includes an auxiliary capacitance electrode 16a, a gate insulating layer 42 formed on the auxiliary capacitance electrode 16a, and a pixel formed on the gate insulating layer 42. It consists of an electrode 21 and a second protective layer 46 formed on the pixel electrode 21.
- the auxiliary capacitance electrode 16 a is a part of the Cs line 16.
- a storage capacitor is formed by the storage capacitor electrode 16a, the pixel electrode 21, and the portion of the gate insulating layer 42 sandwiched between the two electrodes.
- the S terminal 60 is laminated so as to cover the gate insulating layer 42, the electrode layer 61 disposed on the gate insulating layer 42, the signal line 14, and the signal line 14.
- the first protective layer 44 and the second protective layer 46 laminated on the first protective layer 44.
- a contact hole 65 that reaches the signal line 14 through the first protective layer 44 and the second protective layer 46 is formed on the signal line 14.
- the electrode layer 61 is a transparent electrode layer formed of the same material as the pixel electrode 21 in the same process.
- the signal line 14 is formed on the electrode layer 61, and is composed of a first layer 51, a second layer 52, a third layer 53, and a fourth layer 54 that are sequentially stacked, like the source connection line 36 and the like. It has a layer structure.
- An upper wiring (not shown) formed on the second protective layer 46 and the signal line 14 are connected by the contact hole 65.
- the G terminal 70 includes a scanning line 12, a gate insulating layer 42 that is sequentially formed on the scanning line 12, a first protective layer 44, and a second protective layer 46.
- a contact hole 75 that reaches the signal line 12 through the gate insulating layer 42, the first protective layer 44, and the second protective layer 46 is formed on the scanning line 12.
- an upper wiring (not shown) formed on the second protective layer 46 and the scanning line 12 are connected.
- a first protective layer 44 made of silicon nitride is formed on the gate insulating layer 42 without covering the semiconductor layer 31, and a second protective layer 46 made of silicon oxide is formed on the semiconductor layer 31.
- a second protective layer 46 made of silicon oxide is formed on the semiconductor layer 31.
- FIGS. 3 (a) to 3 (d) and FIGS. 4 (e) to (g) are cross sections taken along the line AA ′ of the TFT 30 in FIG. 1, the cross section BB ′ of the auxiliary capacitor 40, and the CC of the S terminal 60.
- the configuration of the 'cross section and the DD' cross section of the G terminal 70 is shown.
- Step A1 First, a metal layer is formed on the substrate by sputtering or the like.
- This metal layer has, for example, a four-layer structure of Al, Ti, TiN, and ITO.
- the metal layer is patterned by a known photolithography method (first mask process) to obtain the gate electrode 12a, the auxiliary capacitance electrode 16a, and the scanning line 12, as shown in FIG. At this time, a Cs line 16 (not shown) is also formed at the same time. No metal layer is left on the S terminal 60.
- Step B1 Next, as shown in FIG. 3B, silicon oxide is stacked on the substrate by plasma CVD so as to cover the gate electrode 12a, the auxiliary capacitance electrode 16a, and the scanning line 12, and the gate insulating layer 42 is obtained. .
- Step C1 Next, ITO, MoN, Al, MoN, and ITO are laminated on the gate insulating layer 42 in this order. Thereafter, the laminated metal layer is patterned by a photolithography method (second mask process) to obtain the metal multilayer structure 19 and the signal line 14 shown in FIG. An opening 39 of the metal multilayer structure 19 is formed on the gate electrode 12 a in the TFT 30 at a position that will later become a channel region of the TFT 30.
- a photolithography method second mask process
- Step D1 Next, silicon nitride is laminated on the gate insulating layer 42 by plasma CVD so as to cover the metal multilayer structure 19 and the signal line 14, and as shown in FIG. 3D, the first protective layer 44 is formed. Get.
- Step E1 Next, the first protective layer 44 is selectively removed by photolithography, and a part of the source electrode 32, the drain electrode 33, and the pixel electrode 21 are exposed as shown in FIG. Mask process). At this time, the source connection line 36 is formed by the remaining metal multilayer structure 19.
- Step F1 Next, an oxide semiconductor material such as IGZO is stacked over the substrate. Thereafter, the oxide semiconductor material is patterned by a photolithography method (fourth mask process) to obtain a semiconductor layer 31 as shown in FIG.
- Process G1 silicon oxide is stacked on the pixel electrode 21, the source electrode 32, the drain electrode 33, the semiconductor layer 31, and the remaining first protective layer 44 by plasma CVD or the like, and the second protective layer 46 is formed. obtain. Thereafter, the second protective layer 46 is patterned by photolithography to form contact holes 65 and 75 on the signal line 14 at the S terminal 60 and on the scanning line 12 at the G terminal 70 (fifth). Mask process).
- the fourth layer 54 of the signal line 14 serves as an etch stopper, and the fourth layer 54 is exposed in the contact hole 65. In the G terminal 70, the scanning line 12 is exposed in the contact hole 75.
- the active matrix substrate 1 shown in FIGS. 1 and 2 is completed. According to this manufacturing process, since only five mask processes are required, the manufacturing efficiency is improved.
- an active matrix substrate 1 according to Embodiment 2 of the present invention will be described.
- the same components as those of the active matrix substrate 1 of the first embodiment are basically denoted by the same reference numerals, and the description thereof will be omitted, and description will be made focusing on different portions.
- the planar configuration of the active matrix substrate 1 according to the second embodiment is the same as that shown in FIG.
- FIGS. 5A to 5D are cross-sectional views showing the configurations of the TFT 30, the auxiliary capacitance unit 40, the S terminal 60, and the G terminal 70 in the active matrix substrate 1 of the second embodiment.
- the pixel electrode 21, the drain electrode 33, and the source electrode 32 are formed on the substrate so as to cover a part of each of the source electrode 32 and the drain electrode 33.
- a semiconductor layer 31 is formed.
- a source connection line 36 is formed on the end of the source electrode 32 opposite to the semiconductor layer 31.
- the source connection line 36 has a three-layer structure including a first layer 51, a second layer 52, and a third layer 53 that are sequentially stacked.
- the first layer 51, the second layer 52, and the third layer 53 are made of, for example, MoN, Al, and MoN, respectively.
- the source connection line 36 may be a single layer or a plurality of layers using these metals or other metals.
- a first protective layer 44 made of silicon nitride is formed so as to cover the source connection line 36.
- the source electrode 32, the drain electrode 33, the pixel electrode 21, the semiconductor layer 31, and the first layer that are not covered by the source connection line 36 are formed.
- a gate insulating layer 42 is formed so as to cover the protective layer 44.
- the gate insulating layer 42 is made of silicon oxide.
- a gate electrode 12 a is formed on the gate insulating layer 42 above the channel portion of the semiconductor layer 31.
- the gate electrode 12 a is a part of the scanning line 12.
- the gate electrode 12a and the scanning line 12 have a three-layer structure of, for example, Al, Ti, and TiN.
- a second protective layer 46 made of silicon nitride is formed on the gate insulating layer 42 so as to cover the gate electrode 12a.
- the auxiliary capacitance unit 40 includes a pixel electrode 21, a gate insulating layer 42 formed on the pixel electrode 21, an auxiliary capacitance electrode 16a formed on the gate insulating layer 42, and The second protective layer 46 is formed on the gate insulating layer 42 so as to cover the auxiliary capacitance electrode 16a.
- the auxiliary capacitance electrode 16 a is a part of the Cs line 16.
- a storage capacitor is formed by the storage capacitor electrode 16a, the pixel electrode 21, and the portion of the gate insulating layer 42 sandwiched between the two electrodes.
- the S terminal 60 is formed so as to cover the electrode layer 61 formed on the substrate, the signal line 14 formed on the electrode layer 61, and the signal line 14. It consists of a protective layer 44 and a second protective layer 46 laminated on the first protective layer 44. A contact hole 65 that reaches the signal line 14 through the first protective layer 44 and the second protective layer 46 is formed on the signal line 14.
- the electrode layer 61 is a transparent electrode layer formed of the same material as the pixel electrode 21 in the same process.
- the signal line 14 includes a first layer 51, a second layer 52, and a third layer 53, similar to the source connection line 36 and the like. An upper wiring (not shown) formed on the second protective layer 46 and the signal line 14 are connected by the contact hole 65.
- the G terminal 70 includes a gate insulating layer 42, a scanning line 12 formed on the gate insulating layer 42, and a second protective layer 46 formed so as to cover the scanning line 12. Become. A contact hole 75 that reaches the signal line 12 through the second protective layer 46 is formed on the scanning line 12. Through the contact hole 75, an upper wiring (not shown) formed on the second protective layer 46 and the scanning line 12 are connected.
- the first protective layer 44 made of silicon nitride is formed without covering the semiconductor layer 31, and the gate insulating layer 42 made of silicon oxide is formed on the semiconductor layer 31.
- the second protective layer 46 made of silicon nitride is formed on the gate electrode 12 a above the channel portion of the semiconductor layer 31. Therefore, it is possible to prevent a problem that the characteristics of the TFT 30 are deteriorated by hydrogen contained in silicon nitride when annealing is performed at a high temperature after the second protective layer 46 is formed. Further, since the wiring such as the signal line 14 and the source connection line 36 is covered with the silicon nitride layer, the corrosion of the wiring is prevented.
- FIGS. 6A to 6D and FIGS. 7E to 7G a method for manufacturing the active matrix substrate 1 according to the second embodiment will be described.
- 6 (a) to 6 (d) and FIGS. 7 (e) to (g) are cross sections taken along the line AA ′ of the TFT 30 in FIG. 1, the cross section BB ′ of the auxiliary capacitor section 40, and the CC of the S terminal 60.
- the configuration of the 'cross section and the DD' cross section of the G terminal 70 is shown.
- Step A2 First, ITO, MoN, Al, and MoN are sequentially laminated on the substrate by sputtering or the like. Next, these four metal layers are patterned by photolithography (first mask process), and as shown in FIG. 6A, the pixel electrode 21, the source electrode 32, and the drain electrode in the TFT 30 and the auxiliary capacitance unit 40 33, and a metal multilayer structure 19 laminated on these electrodes is obtained.
- the S terminal 60 is formed with an electrode layer 61 and a three-layer signal line 14 laminated on the electrode layer 61.
- Step B2 Next, silicon nitride is laminated so as to cover the metal layer by sputtering, and a first protective layer 44 is obtained as shown in FIG.
- Step C2 Next, the first protective layer 44 and the metal multilayer structure 19 are selectively removed by photolithography, and a part of the source electrode 32, the drain electrode 33, and the pixel electrode 21 are removed as shown in FIG. Exposure (second mask process). At this time, the source connection line 36 is formed by the metal multilayer structure 19 left in the TFT 30. The first protective layer 44 does not remain at the G terminal 70.
- Process D2 Next, an oxide semiconductor material such as IGZO is stacked on the substrate and patterned by a photolithography method (third mask process) to obtain the semiconductor layer 31 as shown in FIG.
- Step E2 Next, as shown in FIG. 7E, silicon oxide is stacked on the pixel electrode 21, the source electrode 32, the drain electrode 33, the semiconductor layer 31, and the remaining first protective layer 44, and gate insulation is performed. Layer 42 is obtained. The gate insulating layer 42 is not stacked on the S terminal 60.
- a metal layer is laminated on the substrate by sputtering.
- This metal layer has, for example, a three-layer structure of Al, Ti, and TiN.
- the stacked metal layers are patterned by a photolithography method (fourth mask process) to obtain the gate electrode 12a, the auxiliary capacitance electrode 16a, and the scanning line 12, as shown in FIG. At this time, a Cs line 16 (not shown) is also formed at the same time. No metal layer is left on the S terminal 60.
- Process G2 silicon nitride is laminated so as to cover the gate electrode 12a, the auxiliary capacitance electrode 16a, and the scanning line 12 by a plasma CVD method or the like to obtain the second protective layer 46. Thereafter, the first protective layer 44 and the second protective layer 46 are patterned by photolithography, and contact holes 65 and 75 are formed on the signal line 14 at the S terminal 60 and on the scanning line 12 at the G terminal 70, respectively. Is formed (fifth mask process).
- the third layer 53 of the signal line 14 serves as an etch stopper, and the third layer 53 is exposed in the contact hole 65. In the G terminal 70, the scanning line 12 is exposed in the contact hole 75.
- the active matrix substrate 1 shown in FIGS. 1 and 5 is completed. According to this manufacturing process, since only five mask processes are required, the manufacturing efficiency is improved.
- an active matrix substrate 1 according to Embodiment 3 of the present invention will be described.
- the same components as those of the active matrix substrate 1 of the first embodiment are basically denoted by the same reference numerals, and the description thereof will be omitted, and description will be made focusing on different portions. Since the planar configuration of the active matrix substrate 1 of Embodiment 3 is the same as that shown in FIG. 1, the description thereof is omitted.
- FIGS. 8A to 8D are cross-sectional views showing the configurations of the TFT 30, the auxiliary capacitance unit 40, the S terminal 60, and the G terminal 70 in the active matrix substrate 1 of Embodiment 3, respectively.
- the TFT 30 includes a semiconductor layer 31, a source electrode 32, a drain electrode 33, and a gate electrode 12a.
- the gate electrode 12 a is a part of the scanning line 12.
- the gate electrode 12a and the scanning line 12 have, for example, a five-layer structure composed of ITO, Ti, Al, Ti, and TiN that are sequentially stacked.
- the layers made of ITO, Ti, Al, Ti, and TiN are a first layer 91, a second layer 92, a third layer 93, a fourth layer 94, and a fifth layer 95, respectively.
- a gate insulating layer 42 made of silicon oxide is formed on the gate electrode 12 a, and a source electrode 32, a drain electrode 33, a semiconductor layer 31, and a pixel electrode 21 are formed on the gate insulating layer 42.
- the semiconductor layer 31 is formed so as to cover a part of each of the source electrode 32 and the drain electrode 33, and a channel layer of the TFT 30 is formed between both electrodes.
- a source connection line 36 is formed on the end of the source electrode 32 opposite to the semiconductor layer 31.
- the source connection line 36 has a three-layer structure of a first layer 51, a second layer 52, and a third layer 53 that are sequentially stacked.
- the first layer 51, the second layer 52, and the third layer 53 are each made of, for example, MoN, Al, or MoN.
- a first protective layer 44 made of silicon nitride and a second protective layer 46 made of silicon oxide are formed on the gate insulating layer 42.
- the first protective layer 44 covers the source connection line 36, but does not cover the semiconductor layer 31, the portion of the source electrode 32 that does not overlap with the source connection line 36, the drain electrode 33, and the pixel electrode 21.
- the second protective layer 46 covers the first protective layer 44, the semiconductor layer 31, the portion of the source electrode 32 that does not overlap with the source connection line 36, the drain electrode 33, and the pixel electrode 21.
- the auxiliary capacitance unit 40 includes an auxiliary capacitance electrode 16a, a gate insulating layer 42 formed on the auxiliary capacitance electrode 16a, a pixel electrode 21 formed on the gate insulating layer 42, And a second protective layer 46 formed on the pixel electrode 21.
- the auxiliary capacitance electrode 16 a is a part of the Cs line 16.
- a storage capacitor is formed by the storage capacitor electrode 16a, the pixel electrode 21, and the portion of the gate insulating layer 42 sandwiched between the two electrodes.
- the S terminal 60 is a first layer laminated so as to cover the gate insulating layer 42, the electrode layer 61 disposed on the gate insulating layer 42, the signal line 14, and the signal line 14.
- the protective layer 44 includes a second protective layer 46 stacked on the first protective layer 44.
- the electrode layer 61 is a transparent electrode layer formed of the same material as the pixel electrode 21 in the same process.
- the signal line 14 is formed on the electrode layer 61 and includes a first layer 51, a second layer 52, and a third layer 53, similar to the source connection line 36 and the like.
- a contact hole 65 that reaches the electrode layer 61 through the signal line 14, the first protective layer 44, and the second protective layer 46 is formed.
- the side surface of the contact hole 65 is covered with the second protective layer 46.
- An upper wiring (not shown) formed on the second protective layer 46 and the electrode layer 61 are connected by the contact hole 65.
- the G terminal 70 includes a scanning line 12, a gate insulating layer 42, a first protective layer 44, and a second protective layer 46 that are sequentially formed on the scanning line 12.
- the metal layer of the other scanning line 12 the gate insulating layer 42, the first protective layer 44, and the second protective layer 46 are penetrated to reach the first layer 91.
- a contact hole 75 is formed. The side surface of the contact hole 75 is covered with the second protective layer 46.
- An upper wiring (not shown) formed on the second protective layer 46 and the first layer 91 are connected by the contact hole 75.
- a first protective layer 44 made of silicon nitride is formed on the gate insulating layer 42 without covering the semiconductor layer 31, and a second protective layer 46 made of silicon oxide is formed on the semiconductor layer 31.
- a second protective layer 46 made of silicon oxide is formed on the semiconductor layer 31.
- FIGS. 9A to 9D and FIGS. 10E to 10G a method for manufacturing the active matrix substrate 1 according to the third embodiment will be described.
- 9 (a) to 9 (d) and FIGS. 10 (e) to 10 (g) are cross sections taken along the line AA ′ of the TFT 30 in FIG. 1, the BB ′ cross section of the auxiliary capacitor section 40, and the CC of the S terminal 60, respectively.
- the configuration of the 'cross section and the DD' cross section of the G terminal 70 is shown.
- Step A3 First, the first layer 91, the second layer 92, the third layer 93, the fourth layer 94, and the fifth layer 95 are sequentially stacked on the substrate by sputtering or the like.
- the metal layer is patterned by a photolithography method (first mask process) to obtain the gate electrode 12a, the auxiliary capacitance electrode 16a, and the scanning line 12, as shown in FIG. 9A.
- a Cs line 16 (not shown) is also formed at the same time. No metal layer is left on the S terminal 60.
- Step B3 Next, as shown in FIG. 9B, silicon oxide is stacked on the substrate by plasma CVD so as to cover the gate electrode 12a, the auxiliary capacitance electrode 16a, and the scanning line 12, and the gate insulating layer 42 is obtained. .
- Step C3 Next, ITO, MoN, Al, and MoN are stacked in this order on the gate insulating layer 42. Thereafter, the laminated metal layer is patterned by a photolithography method (second mask process), and as shown in FIG. 9C, the pixel electrode 21, the source electrode 32, the drain electrode 33, the TFT 30 and the auxiliary capacitor 40, And the metal multilayer structure 19 of the 3 layer structure laminated
- the S terminal 60 is formed with an electrode layer 61 and a three-layer signal line 14 laminated on the electrode layer 61.
- An opening 39 of the metal multilayer structure 19 is formed on the gate electrode 12 a in the TFT 30 at a position that will later become a channel region of the TFT 30.
- Process D3 Next, silicon nitride is laminated so as to cover the metal multilayer structure 19 and the signal line 14 by plasma CVD, and the first protective layer 44 is obtained as shown in FIG.
- Step E3 Next, the first protective layer 44, the metal multilayer structure 19, and the signal line 14 are selectively removed by photolithography, and as shown in FIG. 10E, a part of the source electrode 32, the drain electrode 33, Then, the pixel electrode 21 is exposed (third mask process). At this time, the source connection line 36 is formed by the remaining metal multilayer structure 19. At this time, in the S terminal 60, a contact hole 65 penetrating the first protective layer 44 and the signal line 14 is formed, and the electrode layer 61 is exposed therein. In the G terminal 70, a contact hole 75 penetrating the first protective layer 44, the gate insulating layer 42, and the second to fifth layers (92 to 95) of the scanning line 12 is formed. Twelve first layers 91 are exposed.
- Process F3 Next, an oxide semiconductor material such as IGZO is stacked over the substrate and patterned by a photolithography method (fourth mask process) to obtain the semiconductor layer 31 as illustrated in FIG.
- Process G3 silicon oxide is laminated by a plasma CVD method or the like to obtain the second protective layer 46. After that, the second protective layer 46 is patterned by photolithography to expose the electrode layer 61 in the contact hole 65 in the S terminal 60 and in the contact hole 75 in the G terminal 70, the first of the scanning lines 12. The layer 91 is exposed (fifth mask process).
- the active matrix substrate 1 according to the third embodiment is completed. According to this manufacturing process, since only five mask processes are required, the manufacturing efficiency is improved.
- an active matrix substrate 1 according to Embodiment 4 of the present invention will be described.
- the same components as those of the active matrix substrate 1 of Embodiments 1 and 3 are basically denoted by the same reference numerals, description thereof is omitted, and description will be made focusing on different portions. Since the planar configuration of the active matrix substrate 1 of Embodiment 4 is the same as that shown in FIG. 1, the description thereof is omitted.
- FIGS. 11A to 11D are cross-sectional views showing the configurations of the TFT 30, the auxiliary capacitance unit 40, the S terminal 60, and the G terminal 70 in the active matrix substrate 1 of the fourth embodiment.
- the configurations of the TFT 30 and the auxiliary capacitance unit 40 are the same as those in the third embodiment as shown in FIGS.
- the S terminal 60 is a first layer laminated to cover the gate insulating layer 42, the electrode layer 61 disposed on the gate insulating layer 42, the signal line 14, and the signal line 14.
- the protective layer 44 includes a second protective layer 46 stacked on the first protective layer 44.
- the G terminal 70 includes a scanning line 12, a gate insulating layer 42, a first protective layer 44, and a second protective layer 46 that are sequentially formed on the scanning line 12, as shown in FIG.
- the second to fifth layers (92 to 95), the gate insulating layer 42, the first protective layer 44, and the second protective layer 46 of the scanning line 12 are penetrated.
- a contact hole 75 reaching the first layer 91 is formed.
- An upper wiring (not shown) formed on the second protective layer 46 and the first layer 91 are connected by the contact hole 75.
- a first protective layer 44 made of silicon nitride is formed on the gate insulating layer 42 without covering the semiconductor layer 31, and a second protective layer 46 made of silicon oxide is formed on the semiconductor layer 31.
- a second protective layer 46 made of silicon oxide is formed on the semiconductor layer 31.
- 12A to 12C are cross-sectional views taken along the line AA ′ of the TFT 30 in FIG. 1, the cross-section BB ′ of the auxiliary capacitor section 40, the CC ′ cross-section of the S terminal 60, and the D- This shows the configuration of the D ′ cross section.
- Step A4 First, after the steps A3 to D3 described in the third embodiment are performed, the first protective layer 44 and the metal multilayer structure 19 are selectively removed by a photolithography method, and as shown in FIG. 32, the drain electrode 33, and the pixel electrode 21 are exposed (third mask process). At this time, the source connection line 36 is formed by the remaining metal multilayer structure 19. At this time, the first protective layer 44 is not removed at the S terminal 60 and the G terminal 70.
- Step B4 Next, an oxide semiconductor material such as IGZO is stacked on the substrate and patterned by a photolithography method (fourth mask process), so that a semiconductor layer 31 is obtained as shown in FIG.
- Step C4 Next, silicon oxide is laminated by a plasma CVD method or the like to obtain the second protective layer 46. Thereafter, the second protective layer 46 is patterned by photolithography to form a contact hole 65 in the S terminal 60 and a contact hole 75 in the G terminal 70 (fifth mask process).
- the active matrix substrate 1 according to the fourth embodiment is completed. According to this manufacturing process, since only five mask processes are required, the manufacturing efficiency is improved.
- an active matrix substrate 1 according to Embodiment 5 of the present invention will be described.
- the same constituent elements as those of the active matrix substrate 1 of the first and second embodiments are basically denoted by the same reference numerals, the description thereof is omitted, and different parts are mainly described. Since the planar configuration of the active matrix substrate 1 according to the fifth embodiment is the same as that shown in FIG.
- FIGS. 13A to 13D are cross-sectional views showing the configurations of the TFT 30, the auxiliary capacitance unit 40, the S terminal 60, and the G terminal 70 in the active matrix substrate 1 of Embodiment 5, respectively.
- the configurations of the TFT 30, the auxiliary capacitance unit 40, and the G terminal 70 are the same as those in the second embodiment as shown in FIGS. 13A, 13B, and 13D, the description thereof is omitted.
- the S terminal 60 includes an electrode layer 61 formed on the substrate, a signal line 14 formed on the electrode layer 61, and a first protection formed on the signal line 14.
- the layer 44 includes a gate insulating layer 42 stacked on the first protective layer 44, and a second protective layer 46 stacked on the gate insulating layer 42.
- a contact hole 65 penetrating the signal line 14, the first protective layer 44, the gate insulating layer 42, and the second protective layer 46 is formed on the electrode layer 61.
- the side surface of the contact hole 65 is covered with the second protective layer 46.
- An upper wiring (not shown) formed on the second protective layer 46 and the electrode layer 61 are connected by the contact hole 65.
- the first protective layer 44 made of silicon nitride is formed without covering the semiconductor layer 31, and the gate insulating layer 42 made of silicon oxide is formed on the semiconductor layer 31.
- the second protective layer 46 made of silicon nitride is formed on the gate electrode 12 a above the channel portion of the semiconductor layer 31. Therefore, it is possible to prevent a problem that the characteristics of the TFT 30 are deteriorated by hydrogen contained in silicon nitride when annealing is performed at a high temperature after the second protective layer 46 is formed. Further, since the wiring such as the signal line 14 and the source connection line 36 is covered with the silicon nitride layer, the corrosion of the wiring is prevented.
- FIGS. 14A to 14D and FIGS. 15E to 15G show the active matrix substrate 1 according to the fifth embodiment.
- 14 (a) to 14 (d) and FIGS. 15 (e) to 15 (g) show the AA ′ cross section of the TFT 30, the BB ′ cross section of the auxiliary capacitor section 40, and the CC of the S terminal 60 in FIG.
- the configuration of the 'cross section and the DD' cross section of the G terminal 70 is shown.
- Step A5 The same process as the process A2 described in the second embodiment is performed, and as illustrated in FIG. 14A, the pixel electrode 21, the source electrode 32, the drain electrode 33, and the upper electrodes of these electrodes in the TFT 30 and the auxiliary capacitance unit 40 are performed. A metal multilayer structure 19 laminated on is obtained.
- the S terminal 60 is formed with an electrode layer 61 and a three-layer signal line 14 laminated on the electrode layer 61.
- Step B5 Next, the same process as the process B2 described in the second embodiment is performed, and the first protective layer 44 is formed as shown in FIG.
- Step C5 Next, the first protective layer 44, the metal multilayer structure 19, and the signal line 14 are selectively removed by a photolithography method, and as shown in FIG. 14C, a part of the source electrode 32, the drain electrode 33, Then, the pixel electrode 21 is exposed (second mask process). At this time, the source connection line 36 is formed by the metal multilayer structure 19 left in the TFT 30. In the S terminal 60, an opening of the signal line 14 and the first protective layer 44 is formed on the electrode layer 61, and the electrode layer 61 is exposed therein. The first protective layer 44 does not remain at the G terminal 70.
- Process D5 Next, an oxide semiconductor material is stacked over the substrate and patterned by a photolithography method (third mask process), so that a semiconductor layer 31 is obtained as illustrated in FIG.
- Step E5 Next, as shown in FIG. 15E, a gate insulating layer 42 is obtained by stacking silicon oxide on the substrate.
- a metal layer is laminated on the substrate by sputtering.
- This metal layer has, for example, a three-layer structure of Al, Ti, and TiN.
- the stacked metal layers are patterned by a photolithography method (fourth mask process) to obtain the gate electrode 12a, the auxiliary capacitance electrode 16a, and the scanning line 12, as shown in FIG. At this time, a Cs line 16 (not shown) is also formed at the same time. No metal layer is left on the S terminal 60.
- Process G5 silicon nitride is laminated so as to cover the gate electrode 12a, the auxiliary capacitance electrode 16a, and the scanning line 12 by a plasma CVD method or the like to obtain the second protective layer 46. Thereafter, the second protective layer 46 is patterned by photolithography to form contact holes 65 and 75 on the electrode layer 61 in the S terminal 60 and on the scanning line 12 in the G terminal 70 (fifth). Mask process). The electrode layer 61 is exposed in the contact hole 65, and the scanning line 12 is exposed in the contact hole 75.
- the active matrix substrate 1 according to the fifth embodiment is completed. According to this manufacturing process, since only five mask processes are required, the manufacturing efficiency is improved.
- FIG. 16 is a perspective view schematically showing a configuration of a liquid crystal display device 1000 according to Embodiment 6 of the present invention.
- the liquid crystal display device 1000 is disposed outside the active matrix substrate (TFT substrate) 1 and the counter substrate 200 facing each other across the liquid crystal layer, and the active matrix substrate 1 and the counter substrate 200, respectively.
- the active matrix substrate 1 of the first to fifth embodiments can be used.
- a scanning line driving circuit 240 for driving a plurality of scanning lines and a signal line driving circuit 250 for driving a plurality of signal lines are arranged.
- the scanning line driving circuit 240 and the signal line driving circuit 250 are connected to a control circuit 260 disposed inside or outside the active matrix substrate 1.
- a scanning signal for switching on / off of the TFT is supplied from the scanning line driving circuit 240 to the plurality of scanning lines, and a display signal (applied voltage to the pixel electrode) is supplied from the signal line driving circuit 250.
- a display signal is supplied from the signal line driving circuit 250.
- the counter substrate 200 includes a color filter and a common electrode.
- the color filter includes an R (red) filter, a G (green) filter, and a B (blue) filter, each of which is arranged corresponding to a pixel.
- the common electrode is formed so as to cover the plurality of pixel electrodes with the liquid crystal layer interposed therebetween. In accordance with the potential difference applied between the common electrode and each pixel electrode, liquid crystal molecules between both electrodes are aligned for each pixel, and display is performed.
- FIG. 17 is a plan view schematically showing the configuration of the active matrix substrate 1
- FIG. 18 is a plan view schematically showing the configuration of the display area DA of the active matrix substrate 1.
- the active matrix substrate 1 has a display part DA and a peripheral part FA located outside the display part DA.
- electrical elements such as a scanning line driving circuit 240, a signal line driving circuit 250, and a voltage supply circuit are arranged in a COG (Chip on Glass) system. Electric elements such as TFTs and diodes in the peripheral portion FA can be formed in the same manufacturing process as the TFTs of the display portion DA.
- a terminal 300 for attaching an external element such as an FPC (Flexible Printed Circuits) is disposed near the outer end of the peripheral portion FA.
- a terminal 400 that electrically connects the upper wiring and the lower wiring is formed in the peripheral portion FA.
- the terminal 400 includes the S terminal 60, the G terminal 70, and the Cs terminal 80 shown in FIG.
- a plurality of pixels 20 are arranged in a matrix, and a plurality of scanning lines 12 and a plurality of signal lines 14 are arranged so as to be orthogonal to each other.
- a TFT 30 is formed for each pixel 20 near each intersection of the plurality of scanning lines 12 and the plurality of signal lines 14.
- a part of the scanning line 12 constitutes a gate electrode of the TFT 30.
- a pixel electrode 21 that is electrically connected to the drain electrode of the TFT 30 is disposed in each pixel 20.
- a Cs line 16 extends in parallel with the scanning line 12 between two adjacent scanning lines 12.
- a Cs portion 40 is formed in each pixel 20.
- the present invention is suitably used for an active matrix substrate having an oxide semiconductor TFT, and a display device such as a liquid crystal display device and an organic EL display device provided with such an active matrix substrate.
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Abstract
Description
まず、基板上にスパッタ法などにより金属層を形成する。この金属層は、例えば、Al、Ti、およびTiN(窒化チタン)の3層構成を有する。次に、金属層を公知のフォトリソグラフィ法によりパターニングして(第1のマスク工程)、図21(a)に示すように、ゲート電極112a、補助容量電極116a、および走査線112を得る。このとき、ここでは図示しないCs線116も同時に形成される。S端子160には金属層は残されない。
次に、図21(b)に示すように、ゲート電極112a、補助容量電極116a、および走査線112を覆うように基板上に酸化シリコンをプラズマCVD法によって積層して、ゲート絶縁層142を得る。
次に、ゲート絶縁層142の上にITO(Indium Tin Oxide)等の透明導電材料を積層し、フォトリソグラフィ法によりパターニングして(第2のマスク工程)、図21(c)に示すように、ソース電極132およびドレイン電極133を得る。
次に、ゲート絶縁層142の上に、スパッタ法によってソース電極132およびドレイン電極133を覆うようにIGZO等の酸化物半導体材料を積層する。その後、酸化物半導体材料を、フォトリソグラフィ法によりパターニングして(第3のマスク工程)、図21(d)に示すように、半導体層131を得る。
次に、スパッタ法により、ゲート絶縁層142の上に、ソース電極132、ドレイン電極133、および半導体層131を覆うように、Ti、Al、およびMoNをこの順番に積層する。その後、フォトリソグラフィ法によってこれら3層を同時にパターニングして(第4のマスク工程)、図22(e)に示すように、ソース接続線136、ドレイン接続線137、Cs対向電極147、および信号線114を得る。これらの配線は、上述したように3層構成を有する。
次に、各配線を覆うように、酸化シリコンを積層して第1保護層144を形成し、その上に窒化シリコンを積層して第2保護層146を得る。その後、フォトリソグラフィ法によって、ドレイン接続線137、Cs対向電極147、S端子160における信号線114、およびG端子170における走査線112の上にそれぞれコンタクトホール135、145、165、および175を形成する(第5のマスク工程)。ここで、ドレイン接続線137、Cs対向電極147、および信号線114の上層153がエッチストッパの役割を果たし、コンタクトホール135、145、および165の中で、ドレイン接続線137、Cs対向電極147、および信号線114それぞれの上層153が露出するようにエッチングがなされる。また、G端子170においては、コンタクトホール175の中で走査線112が露出する。
次に、第2保護層146の上にスパッタ法によってITO等の透明導電材料を積層する。このとき透明導電材料は、コンタクトホール135、145、165、および175内にも積層される。その後、フォトリソグラフィ法によって、透明電極材料のパターニングを行って画素電極121、上部配線161、および上部配線171が形成される(第6のマスク工程)。
図1~4を参照して、本発明の実施形態1によるアクティブマトリクス基板1を説明する。
まず、基板上にスパッタ法などにより金属層を形成する。この金属層は、例えば、Al、Ti、TiN、ITOの4層構成を有する。次に、金属層を公知のフォトリソグラフィ法によりパターニングして(第1のマスク工程)、図3(a)に示すように、ゲート電極12a、補助容量電極16a、および走査線12を得る。このとき、ここでは図示しないCs線16も同時に形成される。S端子60には金属層は残されない。
次に、図3(b)に示すように、ゲート電極12a、補助容量電極16a、および走査線12を覆うように基板上に酸化シリコンをプラズマCVD法によって積層して、ゲート絶縁層42を得る。
次に、ゲート絶縁層42の上にITO、MoN、Al、MoN、およびITOをこの順に積層する。その後積層した金属層をフォトリソグラフィ法によりパターニングして(第2のマスク工程)、図3(c)に示す金属多層構造19および信号線14を得る。TFT30におけるゲート電極12a上の、後にTFT30のチャネル領域となる位置には、金属多層構造19の開口39が形成される。
次に、ゲート絶縁層42の上に、プラズマCVD法によって、金属多層構造19および信号線14を覆うように窒化シリコンを積層して、図3(d)に示すように、第1保護層44を得る。
次に、フォトリソグラフィ法によって第1保護層44を選択的に除去し、図4(e)に示すように、ソース電極32の一部、ドレイン電極33、および画素電極21を露出させる(第3のマスク工程)。このとき、残された金属多層構造19によりソース接続線36が形成される。
次に、基板上に、IGZO等の酸化物半導体材料を積層する。その後、酸化物半導体材料を、フォトリソグラフィ法によりパターニングして(第4のマスク工程)、図4(f)に示すように半導体層31を得る。
次に、プラズマCVD法等により、画素電極21、ソース電極32、ドレイン電極33、半導体層31、および残された第1保護層44の上に酸化シリコンを積層して、第2保護層46を得る。その後、フォトリソグラフィ法により第2保護層46をパターニングして、S端子60における信号線14の上、およびG端子70における走査線12の上に、それぞれコンタクトホール65および75を形成する(第5のマスク工程)。ここで、信号線14の第4層54がエッチストッパの役割を果たし、コンタクトホール65の中で第4層54が露出する。また、G端子70においては、コンタクトホール75の中で走査線12が露出する。
次に、本発明の実施形態2によるアクティブマトリクス基板1を説明する。以下、実施形態1のアクティブマトリクス基板1と同じ構成要素には基本的に同じ参照符号を付けてその説明を省略し、異なる部分を中心に説明を行なう。実施形態2のアクティブマトリクス基板1の平面構成は図1に表したものと同じであるので、その説明を省略する。
まず、基板上にスパッタ法などによりITO、MoN、Al、MoNを順次積層する。次に、これら4つの金属層をフォトリソグラフィ法によりパターニングして(第1マスク工程)、図6(a)に示すように、TFT30および補助容量部40における画素電極21、ソース電極32、ドレイン電極33、およびこれらの電極の上に積層された金属多層構造19を得る。また、S端子60には電極層61および電極層61の上に積層された3層構成の信号線14が形成される。
次に、スパッタ法により上記金属層を覆うように窒化シリコンを積層して、図6(b)に示すように第1保護層44を得る。
次に、フォトリソグラフィ法によって第1保護層44および金属多層構造19を選択的に除去し、図6(c)に示すように、ソース電極32の一部、ドレイン電極33、および画素電極21を露出させる(第2のマスク工程)。このとき、TFT30に残された金属多層構造19によりソース接続線36が形成される。G端子70には第1保護層44は残らない。
次に、基板上にIGZO等の酸化物半導体材料を積層し、フォトリソグラフィ法によりパターニングして(第3のマスク工程)、図6(d)に示すように半導体層31を得る。
次に、図7(e)に示すように、画素電極21、ソース電極32、ドレイン電極33、半導体層31、および残された第1保護層44の上に酸化シリコンを積層して、ゲート絶縁層42を得る。S端子60にはゲート絶縁層42は積層されない。
次に、基板上にスパッタ法により金属層を積層する。この金属層は、例えば、Al、Ti、TiNの3層構成を有する。次に、積層した金属層をフォトリソグラフィ法によりパターニングして(第4のマスク工程)、図7(f)に示すように、ゲート電極12a、補助容量電極16a、および走査線12を得る。このとき、ここでは図示しないCs線16も同時に形成される。S端子60には金属層は残されない。
次に、プラズマCVD法等により、ゲート電極12a、補助容量電極16a、および走査線12を覆うように窒化シリコンを積層して第2保護層46を得る。その後、フォトリソグラフィ法により第1保護層44および第2保護層46をパターニングして、S端子60における信号線14の上、およびG端子70における走査線12の上に、それぞれコンタクトホール65および75を形成する(第5のマスク工程)。ここで、信号線14の第3層53がエッチストッパの役割を果たし、コンタクトホール65の中で第3層53が露出する。また、G端子70においては、コンタクトホール75の中で走査線12が露出する。
次に、本発明の実施形態3によるアクティブマトリクス基板1を説明する。以下、実施形態1のアクティブマトリクス基板1と同じ構成要素には基本的に同じ参照符号を付けてその説明を省略し、異なる部分を中心に説明を行なう。実施形態3のアクティブマトリクス基板1の平面構成は図1に表したものと同じであるので、その説明を省略する。
まず、基板上にスパッタ法などにより第1層91、第2層92、第3層93、第4層94、および第5層95を順次積層する。次に、金属層をフォトリソグラフィ法によりパターニングして(第1のマスク工程)、図9(a)に示すように、ゲート電極12a、補助容量電極16a、および走査線12を得る。このとき、ここでは図示しないCs線16も同時に形成される。S端子60には金属層は残されない。
次に、図9(b)に示すように、ゲート電極12a、補助容量電極16a、および走査線12を覆うように基板上に酸化シリコンをプラズマCVD法によって積層して、ゲート絶縁層42を得る。
次に、ゲート絶縁層42の上にITO、MoN、Al、およびMoNをこの順に積層する。その後積層した金属層をフォトリソグラフィ法によりパターニングして(第2のマスク工程)、図9(c)に示すように、TFT30および補助容量部40における画素電極21、ソース電極32、ドレイン電極33、およびこれらの電極の上に積層された3層構成の金属多層構造19を得る。また、S端子60には電極層61および電極層61の上に積層された3層構成の信号線14が形成される。TFT30におけるゲート電極12a上の、後にTFT30のチャネル領域となる位置には、金属多層構造19の開口39が形成される。
次に、プラズマCVD法によって、金属多層構造19および信号線14を覆うように窒化シリコンを積層して、図9(d)に示すように、第1保護層44を得る。
次に、フォトリソグラフィ法によって第1保護層44、金属多層構造19、および信号線14を選択的に除去し、図10(e)に示すように、ソース電極32の一部、ドレイン電極33、および画素電極21を露出させる(第3のマスク工程)。このとき、残された金属多層構造19によりソース接続線36が形成される。このとき、S端子60においては、第1保護層44および信号線14を貫通するコンタクトホール65が形成され、そのなかで電極層61が露出する。またG端子70においては、第1保護層44、ゲート絶縁層42、および走査線12の第2層~第5層(92~95)を貫通するコンタクトホール75が形成され、その中で走査線12の第1層91が露出する。
次に、基板上に、IGZO等の酸化物半導体材料を積層し、フォトリソグラフィ法によりパターニングして(第4のマスク工程)、図10(f)に示すように半導体層31を得る。
次に、プラズマCVD法等により酸化シリコンを積層して、第2保護層46を得る。その後、フォトリソグラフィ法により第2保護層46をパターニングして、S端子60におけるコンタクトホール65の中で電極層61を露出させるとともに、G端子70におけるコンタクトホール75の中で走査線12の第1層91を露出させる(第5のマスク工程)。
次に、本発明の実施形態4によるアクティブマトリクス基板1を説明する。以下、実施形態1および3のアクティブマトリクス基板1と同じ構成要素には基本的に同じ参照符号を付けてその説明を省略し、異なる部分を中心に説明を行なう。実施形態4のアクティブマトリクス基板1の平面構成は図1に表したものと同じであるので、その説明を省略する。
まず、実施形態3において説明した工程A3~D3を実施した後、フォトリソグラフィ法によって第1保護層44および金属多層構造19を選択的に除去し、図12(a)に示すように、ソース電極32の一部、ドレイン電極33、および画素電極21を露出させる(第3のマスク工程)。このとき、残された金属多層構造19によりソース接続線36が形成される。このとき、S端子60およびG端子70においては、第1保護層44は除去されない。
次に、基板上に、IGZO等の酸化物半導体材料を積層し、フォトリソグラフィ法によりパターニングして(第4のマスク工程)、図12(b)に示すように半導体層31を得る。
次に、プラズマCVD法等により酸化シリコンを積層して、第2保護層46を得る。その後、フォトリソグラフィ法により第2保護層46をパターニングして、S端子60におけるコンタクトホール65、およびG端子70におけるコンタクトホール75を形成する(第5のマスク工程)。
次に、本発明の実施形態5によるアクティブマトリクス基板1を説明する。以下、実施形態1および2のアクティブマトリクス基板1と同じ構成要素には基本的に同じ参照符号を付けてその説明を省略し、異なる部分を中心に説明を行なう。実施形態5のアクティブマトリクス基板1の平面構成は図1に表したものと同じであるので、その説明を省略する。
実施形態2において説明した工程A2と同じ工程が実施され、図14(a)に示すように、TFT30および補助容量部40における画素電極21、ソース電極32、ドレイン電極33、およびこれらの電極の上に積層された金属多層構造19を得る。また、S端子60には電極層61および電極層61の上に積層された3層構成の信号線14が形成される。
次に、実施形態2において説明した工程B2と同じ工程が実施され、図14(b)に示すように第1保護層44が形成される。
次に、フォトリソグラフィ法によって第1保護層44、金属多層構造19、および信号線14を選択的に除去し、図14(c)に示すように、ソース電極32の一部、ドレイン電極33、および画素電極21を露出させる(第2のマスク工程)。このとき、TFT30に残された金属多層構造19によりソース接続線36が形成される。S端子60においては、電極層61の上に信号線14および第1保護層44の開口が形成され、その中で電極層61が露出する。G端子70には第1保護層44は残らない。
次に、基板上に酸化物半導体材料を積層し、フォトリソグラフィ法によりパターニングして(第3のマスク工程)、図14(d)に示すように半導体層31を得る。
次に、図15(e)に示すように、基板上に酸化シリコンを積層してゲート絶縁層42を得る。
次に、基板上にスパッタ法により金属層を積層する。この金属層は、例えば、Al、Ti、TiNの3層構成を有する。次に、積層した金属層をフォトリソグラフィ法によりパターニングして(第4のマスク工程)、図15(f)に示すように、ゲート電極12a、補助容量電極16a、および走査線12を得る。このとき、ここでは図示しないCs線16も同時に形成される。S端子60には金属層は残されない。
次に、プラズマCVD法等により、ゲート電極12a、補助容量電極16a、および走査線12を覆うように窒化シリコンを積層して第2保護層46を得る。その後、フォトリソグラフィ法により第2保護層46をパターニングして、S端子60における電極層61の上、およびG端子70における走査線12の上に、それぞれコンタクトホール65および75を形成する(第5のマスク工程)。コンタクトホール65の中では電極層61が露出し、コンタクトホール75の中では走査線12が露出する。
図16は、本発明の実施形態6による液晶表示装置1000の構成を模式的に表した斜視図である。
12、112 走査線
12a、112a ゲート電極
14、114 信号線
16、116 補助容量線(Cs線)
16a、116a 補助容量電極
19 金属多層構造
20、120 画素
21、121 画素電極
30、130 TFT
31、131 半導体層
32、132 ソース電極
33、133 ドレイン電極
36、136 ソース接続線
40、140 補助容量部
42、142 ゲート絶縁層
44、144 第1保護層
46、146 第2保護層
51 第1層
52 第2層
53 第3層
54 第4層
60、160 信号線端子(S端子)
61 電極層
65、75、135、145、165、175 コンタクトホール
39、66 開口
70、170 ゲート線端子(G端子)
80、180 補助容量線端子(Cs端子)
137 ドレイン接続線
147 Cs対向電極
151 下層
152 中間層
153 上層
161、171 上部配線
200 対向基板
210、220 偏光板
230 バックライトユニット
240 走査線駆動回路
250 信号線駆動回路
260 制御回路
300、400 端子
1000 液晶表示装置
Claims (13)
- 酸化物半導体を有する薄膜トランジスタを備えたアクティブマトリクス基板であって、
前記薄膜トランジスタのゲート電極、ソース電極、およびドレイン電極と、
前記ソース電極に電圧を供給する信号線と、
前記薄膜トランジスタのスイッチング信号を供給する走査線と、
前記ソース電極およびドレイン電極に接続された酸化物半導体からなる半導体層と、を備え、
(A)前記ゲート電極の上に酸化シリコンからなるゲート絶縁層が形成され、
前記ゲート絶縁層の上に前記ソース電極、前記ドレイン電極、および前記半導体層が形成され、
前記ゲート絶縁層の上に前記半導体層を覆うことなく窒化シリコンからなる第1保護層が形成され、
前記半導体層の上に酸化シリコンからなる第2保護層が形成されているか、
または、
(B)前記半導体層を覆うことなく窒化シリコンからなる第1保護層が形成され、
前記半導体層の上に酸化シリコンからなるゲート絶縁層が形成され、
前記半導体層のチャネル部の上方の前記ゲート絶縁層の上に前記ゲート電極が形成され、
前記ゲート電極の上に窒化シリコンからなる第2保護層が形成されている、ことを特徴とするアクティブマトリクス基板。 - 前記信号線と前記ソース電極とを接続するソース接続線とを備え、
前記信号線および前記ソース接続線が前記第1保護層に接するように形成されている、請求項1に記載のアクティブマトリクス基板。 - 前記信号線が透明電極材料による電極層の上に形成されており、
前記ソース電極が前記透明電極材料からなり、
前記ソース電極の一部の上に前記ソース接続線が形成されている、請求項2に記載のアクティブマトリクス基板。 - それぞれが画素電極を含む複数の画素を備え、
前記ソース電極、前記ドレイン電極、および前記画素電極が、同じ透明電極材料によって同一の層に形成されている、請求項1から3のいずれかに記載のアクティブマトリクス基板。 - 前記複数の画素のそれぞれに形成された補助容量を備え、
前記補助容量の補助容量電極が、前記ゲート絶縁層を挟んで前記画素電極と対向するように配置されている、請求項4に記載のアクティブマトリクス基板。 - 前記信号線の一部を含む信号線端子を備え、
前記信号線端子内に、前記第1保護層および前記第2保護層を貫通して前記信号線に達するコンタクトホールが形成されている、請求項1から5のいずれかに記載のアクティブマトリクス基板。 - 前記走査線の一部を含むゲート線端子を備え、
前記ゲート線端子内に、少なくとも前記第2保護層を貫通して前記走査線に達するコンタクトホールが形成されている、請求項1から6のいずれかに記載のアクティブマトリクス基板。 - 請求項1から7のいずれかに記載のアクティブマトリクス基板を備えた表示装置。
- 酸化物半導体を有する薄膜トランジスタを備えたアクティブマトリクス基板の製造方法であって、
前記薄膜トランジスタのソース電極およびドレイン電極となる電極層を形成する工程と、
前記電極層の上に金属層を積層する工程と、
前記金属層の上に、窒化シリコンからなる第1保護層を形成する工程と、
前記第1保護層および前記金属層をパターニングして、前記電極層の一部を露出させる工程と、
前記電極層の上に酸化物半導体からなる半導体層を形成する工程と、
露出した前記電極層、前記半導体層、および残された前記第1保護層の上に酸化シリコンからなる第2保護層またはゲート絶縁層を形成する工程と、を含むアクティブマトリクス基板の製造方法。 - 露出した前記電極層、前記半導体層、および残された前記第1保護層の上に酸化シリコンからなる第2保護層が形成され、
前記電極層を形成する前に、前記薄膜トランジスタのゲート電極を形成する工程と、前記ゲート電極の上にゲート絶縁層を形成する工程が実施される、請求項9に記載のアクティブマトリクス基板の製造方法。 - 露出した前記電極層、前記半導体層、および残された前記第1保護層の上に酸化シリコンからなるゲート絶縁層が形成され、
前記ゲート絶縁層を形成した後に、前記半導体層の上方の前記ゲート絶縁層の上に前記薄膜トランジスタのゲート電極を形成する工程と、前記ゲート電極の上に窒化シリコンからなる第2保護層を形成する工程が実施される、請求項9に記載のアクティブマトリクス基板の製造方法。 - 前記金属層によって、前記ソース電極に電圧を供給する信号線、および前記信号線と前記ソース電極とを接続するソース接続線が形成される、請求項9から11のいずれかに記載のアクティブマトリクス基板の製造方法。
- 前記電極層が透明電極材料からなり、前記電極層から画素電極が形成される、請求項9から12のいずれかに記載のアクティブマトリクス基板の製造方法。
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KR (1) | KR101345047B1 (ja) |
CN (1) | CN103460270B (ja) |
TW (1) | TWI406420B (ja) |
WO (1) | WO2012133103A1 (ja) |
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WO2014080930A1 (ja) * | 2012-11-21 | 2014-05-30 | シャープ株式会社 | 液晶表示装置 |
JP2017045964A (ja) * | 2015-08-28 | 2017-03-02 | ラピスセミコンダクタ株式会社 | 半導体装置及び半導体装置の製造方法 |
CN107393943A (zh) * | 2016-05-16 | 2017-11-24 | 三星显示有限公司 | 显示装置及制造显示装置的方法 |
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US10276593B2 (en) * | 2015-06-05 | 2019-04-30 | Sharp Kabushiki Kaisha | Active matrix substrate and method for manufacturing same, display device using active matrix substrate |
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Also Published As
Publication number | Publication date |
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JPWO2012133103A1 (ja) | 2014-07-28 |
JP5253686B2 (ja) | 2013-07-31 |
EP2693420A1 (en) | 2014-02-05 |
US9379143B2 (en) | 2016-06-28 |
EP2693420A4 (en) | 2014-10-08 |
TWI406420B (zh) | 2013-08-21 |
EP2693420B1 (en) | 2019-05-08 |
KR101345047B1 (ko) | 2013-12-26 |
TW201304149A (zh) | 2013-01-16 |
CN103460270B (zh) | 2016-09-07 |
CN103460270A (zh) | 2013-12-18 |
US20140042439A1 (en) | 2014-02-13 |
KR20130106448A (ko) | 2013-09-27 |
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