DE69611653T2 - Poliersuspensionen und Verfahren zu ihrer Herstellung - Google Patents

Poliersuspensionen und Verfahren zu ihrer Herstellung

Info

Publication number
DE69611653T2
DE69611653T2 DE69611653T DE69611653T DE69611653T2 DE 69611653 T2 DE69611653 T2 DE 69611653T2 DE 69611653 T DE69611653 T DE 69611653T DE 69611653 T DE69611653 T DE 69611653T DE 69611653 T2 DE69611653 T2 DE 69611653T2
Authority
DE
Germany
Prior art keywords
manufacture
processes
polishing suspensions
suspensions
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69611653T
Other languages
English (en)
Other versions
DE69611653D1 (de
Inventor
Hiroshi Kato
Kazuhiko Hayashi
Hiroyuki Kohno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=17790615&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69611653(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of DE69611653D1 publication Critical patent/DE69611653D1/de
Application granted granted Critical
Publication of DE69611653T2 publication Critical patent/DE69611653T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/04—Aqueous dispersions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
DE69611653T 1995-11-10 1996-11-08 Poliersuspensionen und Verfahren zu ihrer Herstellung Expired - Lifetime DE69611653T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29311495 1995-11-10

Publications (2)

Publication Number Publication Date
DE69611653D1 DE69611653D1 (de) 2001-03-01
DE69611653T2 true DE69611653T2 (de) 2001-05-03

Family

ID=17790615

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69611653T Expired - Lifetime DE69611653T2 (de) 1995-11-10 1996-11-08 Poliersuspensionen und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
US (1) US5904159A (de)
EP (1) EP0773270B1 (de)
KR (1) KR100394049B1 (de)
DE (1) DE69611653T2 (de)
TW (1) TW422873B (de)

Families Citing this family (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998047976A1 (de) * 1997-04-17 1998-10-29 Merck Patent Gmbh Pufferlösungen für suspensionen, verwendbar zum chemisch-mechanischen polieren
KR100510815B1 (ko) * 1997-05-07 2005-10-24 제이에스알 가부시끼가이샤 무기입자의 수성분산체 및 그의 제조방법
US6099798A (en) 1997-10-31 2000-08-08 Nanogram Corp. Ultraviolet light block and photocatalytic materials
US6290735B1 (en) 1997-10-31 2001-09-18 Nanogram Corporation Abrasive particles for surface polishing
KR19990023544A (ko) * 1997-08-19 1999-03-25 마쯔모또 에이찌 무기 입자의 수성 분산체와 그의 제조 방법
US6114249A (en) * 1998-03-10 2000-09-05 International Business Machines Corporation Chemical mechanical polishing of multiple material substrates and slurry having improved selectivity
JP4163785B2 (ja) 1998-04-24 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
JP3810588B2 (ja) * 1998-06-22 2006-08-16 株式会社フジミインコーポレーテッド 研磨用組成物
JP4163788B2 (ja) * 1998-06-25 2008-10-08 スピードファム株式会社 研磨用組成物及び研磨加工方法
US6533832B2 (en) 1998-06-26 2003-03-18 Cabot Microelectronics Corporation Chemical mechanical polishing slurry and method for using same
US6468909B1 (en) 1998-09-03 2002-10-22 Micron Technology, Inc. Isolation and/or removal of ionic contaminants from planarization fluid compositions using macrocyclic polyethers and methods of using such compositions
US6551367B2 (en) 1998-09-22 2003-04-22 Cheil Industries Inc. Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing
US6447693B1 (en) 1998-10-21 2002-09-10 W. R. Grace & Co.-Conn. Slurries of abrasive inorganic oxide particles and method for polishing copper containing surfaces
CN1142989C (zh) * 1998-10-21 2004-03-24 格雷斯公司 用于研磨的无机氧化物颗粒淤浆及调节所述颗粒的磨蚀性的方法
JP4366735B2 (ja) 1998-11-05 2009-11-18 Ｊｓｒ株式会社 重合体粒子を含有する研磨剤
KR20000048167A (ko) * 1998-12-24 2000-07-25 미우라 유이찌, 쓰지 가오루 양이온성 수지 변성 실리카 분산액 및 그 제조 방법
JP4257687B2 (ja) 1999-01-11 2009-04-22 株式会社トクヤマ 研磨剤および研磨方法
KR100574259B1 (ko) * 1999-03-31 2006-04-27 가부시끼가이샤 도꾸야마 연마제 및 연마 방법
US6599836B1 (en) 1999-04-09 2003-07-29 Micron Technology, Inc. Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies
US6407000B1 (en) * 1999-04-09 2002-06-18 Micron Technology, Inc. Method and apparatuses for making and using bi-modal abrasive slurries for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies
FR2792643B1 (fr) 1999-04-22 2001-07-27 Clariant France Sa Composition de polissage mecano-chimique de couches en un materiau isolant a base de polymere a faible constante dielectrique
JP3099002B1 (ja) * 1999-06-25 2000-10-16 茂徳科技股▲ふん▼有限公司 ２段階化学機械研磨方法
US6488730B2 (en) * 1999-07-01 2002-12-03 Cheil Industries, Inc. Polishing composition
EP1177068A4 (de) * 1999-07-03 2004-06-16 Rodel Inc Verbesserte chemisch-mechanische polierschlämme für metall
US6274478B1 (en) 1999-07-13 2001-08-14 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
US6573173B2 (en) 1999-07-13 2003-06-03 Motorola, Inc. Method for forming a copper interconnect using a multi-platen chemical mechanical polishing (CMP) process
JP3721497B2 (ja) * 1999-07-15 2005-11-30 株式会社フジミインコーポレーテッド 研磨用組成物の製造方法
DE10066199B4 (de) * 1999-07-23 2007-06-06 Murata Mfg. Co., Ltd., Nagaokakyo Verfahren zur Erzeugung eines keramischen Schlickers und Verwendung eines keramischen Schlickers zur Erzeugung einer ungesinterten Keramikschicht und eines keramischen Mehrschicht-Elektronikbauteils
US6322425B1 (en) 1999-07-30 2001-11-27 Corning Incorporated Colloidal polishing of fused silica
US6159077A (en) * 1999-07-30 2000-12-12 Corning Incorporated Colloidal silica polishing abrasive
CA2378790A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Polishing system and method of its use
KR100310234B1 (ko) * 1999-08-20 2001-11-14 안복현 반도체 소자 ｃｍｐ용 금속산화물 슬러리의 제조방법
DE19954355A1 (de) * 1999-11-11 2001-05-23 Wacker Siltronic Halbleitermat Polierteller und Verfahren zur Einstellung und Regelung der Planarität eines Poliertellers
US6293848B1 (en) 1999-11-15 2001-09-25 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6527817B1 (en) 1999-11-15 2003-03-04 Cabot Microelectronics Corporation Composition and method for planarizing surfaces
US6319096B1 (en) * 1999-11-15 2001-11-20 Cabot Corporation Composition and method for planarizing surfaces
US6334880B1 (en) * 1999-12-07 2002-01-01 Silbond Corporation Abrasive media and aqueous slurries for chemical mechanical polishing and planarization
DE19962564C1 (de) * 1999-12-23 2001-05-10 Wacker Siltronic Halbleitermat Poliertuch
AU2001256208A1 (en) * 2000-03-31 2001-10-15 Bayer Aktiengesellschaft Polishing agent and method for producing planar layers
TW586157B (en) * 2000-04-13 2004-05-01 Showa Denko Kk Slurry composition for polishing semiconductor device, and method for manufacturing semiconductor device using the same
JP2001326199A (ja) * 2000-05-17 2001-11-22 Hitachi Ltd 半導体集積回路装置の製造方法
US7083770B2 (en) * 2000-06-20 2006-08-01 Nippon Aerosil Co., Ltd. Amorphous, fine silica particles, and method for their production and their use
DE10054345A1 (de) * 2000-11-02 2002-05-08 Degussa Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung
US6787061B1 (en) * 2000-11-16 2004-09-07 Intel Corporation Copper polish slurry for reduced interlayer dielectric erosion and method of using same
DE10065027A1 (de) 2000-12-23 2002-07-04 Degussa Wäßrige Dispersion, Verfahren zu deren Herstellung und Verwendung
US6612911B2 (en) 2001-01-16 2003-09-02 Cabot Microelectronics Corporation Alkali metal-containing polishing system and method
WO2002061810A1 (en) * 2001-01-16 2002-08-08 Cabot Microelectronics Corporation Ammonium oxalate-containing polishing system and method
EP1234800A1 (de) * 2001-02-22 2002-08-28 Degussa Aktiengesellschaft Wässrige Dispersion, Verfahren zu ihrer Herstellung und Verwendung
JP2002319556A (ja) * 2001-04-19 2002-10-31 Hitachi Ltd 半導体集積回路装置の製造方法
US7279119B2 (en) * 2001-06-14 2007-10-09 Ppg Industries Ohio, Inc. Silica and silica-based slurry
US6656241B1 (en) 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
US6805812B2 (en) 2001-10-11 2004-10-19 Cabot Microelectronics Corporation Phosphono compound-containing polishing composition and method of using same
US6719920B2 (en) * 2001-11-30 2004-04-13 Intel Corporation Slurry for polishing a barrier layer
US6682575B2 (en) * 2002-03-05 2004-01-27 Cabot Microelectronics Corporation Methanol-containing silica-based CMP compositions
FR2843061B1 (fr) * 2002-08-02 2004-09-24 Soitec Silicon On Insulator Procede de polissage de tranche de materiau
KR100497608B1 (ko) * 2002-08-05 2005-07-01 삼성전자주식회사 슬러리 조성물 및 이의 제조 방법과 이를 사용한 연마 방법
JP4593064B2 (ja) 2002-09-30 2010-12-08 株式会社フジミインコーポレーテッド 研磨用組成物及びそれを用いた研磨方法
MY134679A (en) * 2002-12-26 2007-12-31 Kao Corp Polishing composition
JP4426192B2 (ja) * 2003-02-14 2010-03-03 ニッタ・ハース株式会社 研磨用組成物の製造方法
US20040209066A1 (en) * 2003-04-17 2004-10-21 Swisher Robert G. Polishing pad with window for planarization
JP4130614B2 (ja) * 2003-06-18 2008-08-06 株式会社東芝 半導体装置の製造方法
JP2005268667A (ja) * 2004-03-19 2005-09-29 Fujimi Inc 研磨用組成物
CN1980860B (zh) * 2004-05-04 2011-06-08 卡伯特公司 制备具有期望的聚集粒径的聚集的金属氧化物颗粒的分散体的方法
US20060089093A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089094A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US20060089095A1 (en) * 2004-10-27 2006-04-27 Swisher Robert G Polyurethane urea polishing pad
US7942945B1 (en) * 2005-03-28 2011-05-17 University Of South Florida CMP slurry for polymeric interlayer dielectric planarization
US20070209288A1 (en) * 2005-03-28 2007-09-13 Yoshiharu Ohta Semiconductor Polishing Composition
WO2006125462A1 (en) * 2005-05-25 2006-11-30 Freescale Semiconductor, Inc Cleaning solution for a semiconductor wafer
KR20080059266A (ko) * 2005-09-26 2008-06-26 플레이너 솔루션즈 엘엘씨 화학적 기계적 연마 용도로 사용되기 위한 초고순도의콜로이드 실리카
US20070122546A1 (en) * 2005-11-25 2007-05-31 Mort Cohen Texturing pads and slurry for magnetic heads
US8591763B2 (en) * 2006-03-23 2013-11-26 Cabot Microelectronics Corporation Halide anions for metal removal rate control
TW200817497A (en) * 2006-08-14 2008-04-16 Nippon Chemical Ind Polishing composition for semiconductor wafer, production method thereof, and polishing method
WO2008023214A1 (en) * 2006-08-23 2008-02-28 Freescale Semiconductor, Inc. Rinse formulation for use in the manufacture of an integrated circuit
JP5335183B2 (ja) * 2006-08-24 2013-11-06 株式会社フジミインコーポレーテッド 研磨用組成物及び研磨方法
ATE510899T1 (de) * 2006-08-30 2011-06-15 Saint Gobain Ceramics Konzentrierte abrasive schlammzusammensetzungen, verfahren zu ihrer herstellung sowie verfahren zu ihrer verwendung
JP2008235481A (ja) * 2007-03-19 2008-10-02 Nippon Chem Ind Co Ltd 半導体ウエハ研磨用組成物、その製造方法、及び研磨加工方法
DE102007059861A1 (de) 2007-12-12 2009-06-18 Evonik Degussa Gmbh Verfahren zur Herstellung von Siliciumdioxid-Dispersionen
US20110141641A1 (en) * 2010-06-30 2011-06-16 General Electric Company Circuit breaker with overvoltage protection
US10442899B2 (en) 2014-11-17 2019-10-15 Silbond Corporation Stable ethylsilicate polymers and method of making the same
JP2016155900A (ja) * 2015-02-23 2016-09-01 株式会社フジミインコーポレーテッド 研磨用組成物、研磨方法及び硬脆材料基板の製造方法
JP6775453B2 (ja) * 2017-03-23 2020-10-28 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54122489A (en) 1978-03-16 1979-09-22 Nippon Telegr & Teleph Corp <Ntt> Abrasives
JPS61136909A (ja) 1984-12-04 1986-06-24 Mitsubishi Chem Ind Ltd 無水ケイ酸の水分散液組成物
JP2661710B2 (ja) * 1988-07-26 1997-10-08 オルガノ株式会社 固定化酵素
US5246624A (en) * 1989-03-21 1993-09-21 Cabot Corporation Aqueous colloidal dispersion of fumed silica, acid and stabilizer
DE4006392A1 (de) 1989-03-21 1990-09-27 Cabot Corp Waessrige colloidale dispersion aus in der gasphase hergestelltem siliciumdioxid, aus einer saeure und aus einem stabilisator, sowie ein verfahren zu ihrer hertellung
JPH0533893A (ja) * 1991-07-26 1993-02-09 Nippon Steel Corp 流動体の加熱装置
US5264010A (en) * 1992-04-27 1993-11-23 Rodel, Inc. Compositions and methods for polishing and planarizing surfaces
JP2745978B2 (ja) * 1992-07-20 1998-04-28 株式会社大林組 芝生の入れ替え機構に使用される芝生床版台車
US5605490A (en) * 1994-09-26 1997-02-25 The United States Of America As Represented By The Secretary Of The Army Method of polishing langasite
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
KR960041316A (ko) * 1995-05-22 1996-12-19 고사이 아키오 연마용 입상체, 이의 제조방법 및 이의 용도

Also Published As

Publication number Publication date
EP0773270A3 (de) 1997-12-03
TW422873B (en) 2001-02-21
KR970025846A (ko) 1997-06-24
US5904159A (en) 1999-05-18
DE69611653D1 (de) 2001-03-01
EP0773270A2 (de) 1997-05-14
KR100394049B1 (ko) 2003-12-24
EP0773270B1 (de) 2001-01-24

Similar Documents

Publication Publication Date Title
DE69611653D1 (de) Poliersuspensionen und Verfahren zu ihrer Herstellung
DE59606535D1 (de) Furnacerusse und Verfahren zu ihrer Herstellung
DE69526709D1 (de) Getrennte Teilchen und Verfahren zu ihrer Herstellung
DE69530976D1 (de) Schleifgegenstände und verfahren zu ihrer herstellung
DE69607560T2 (de) Schleifblatt und Verfahren zu seiner Herstellung
DE69534025D1 (de) Verbesserte schleifscheiben und verfahren zu ihrer herstellung
DE59602652D1 (de) Zahnbürste und verfahren zu ihrer herstellung
DE69718214D1 (de) Komfortable orthopädische stütze und verfahren zu ihrer herstellung
DE69814891D1 (de) Zusammengesetzte umkehrosmosemembran und verfahren zu ihrer herstellung
DE69611599D1 (de) Halbaromatische polyamidzusamensetzung und verfahren zu ihrer herstellung
DE69624275D1 (de) Gefärbte Kontaktlinse und Verfahren zu ihrer Herstellung
DE69812127T2 (de) Polierkissen und verfahren zu seiner herstellung
DE69625406D1 (de) Schleifband und Verfahren zu dessen Herstellung
DE69615890T2 (de) Ultrafeine Teilchen und Verfahren zu ihrer Herstellung
DE59606076D1 (de) Bürste und Verfahren zu ihrer Herstellung
DE69701024D1 (de) Magnetitteilchen und Verfahren zu ihrer Herstellung
DE69812566T2 (de) Magnetitteilchen und Verfahren zu ihrer Herstellung
DE59610554D1 (de) Felge und Verfahren zu ihrer Herstellung
DE69612927D1 (de) Kupplung und Verfahren zu ihrer Herstellung
DE69723916D1 (de) Magnetitteilchen und Verfahren zu ihrer Herstellung
DE69616722D1 (de) Flachsicherung und Verfahren zu ihrer Herstellung
DE69721956D1 (de) Typenräder und Verfahren zu dessen Herstellung
DE69500356T2 (de) Optoelektrische Gegenstände und Verfahren zu ihrer Herstellung
DE69511319D1 (de) Clinoptilolit und Verfahren zu seiner Herstellung
DE69512815T2 (de) Optoelektrische Gegenstände und Verfahren zu ihrer Herstellung

Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings