ATE257977T1 - Bipolar mos-leistungstransistor ohne latch-up - Google Patents
Bipolar mos-leistungstransistor ohne latch-upInfo
- Publication number
- ATE257977T1 ATE257977T1 AT98928969T AT98928969T ATE257977T1 AT E257977 T1 ATE257977 T1 AT E257977T1 AT 98928969 T AT98928969 T AT 98928969T AT 98928969 T AT98928969 T AT 98928969T AT E257977 T1 ATE257977 T1 AT E257977T1
- Authority
- AT
- Austria
- Prior art keywords
- bipolar transistor
- nmosfet
- npn bipolar
- silicon carbide
- base layer
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 3
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
Landscapes
- Microelectronics & Electronic Packaging (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US4942397P | 1997-06-12 | 1997-06-12 | |
| US08/891,221 US5969378A (en) | 1997-06-12 | 1997-07-10 | Latch-up free power UMOS-bipolar transistor |
| US09/082,554 US6121633A (en) | 1997-06-12 | 1998-05-21 | Latch-up free power MOS-bipolar transistor |
| PCT/US1998/012007 WO1998057378A1 (en) | 1997-06-12 | 1998-06-10 | Latch-up free power mos-bipolar transistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE257977T1 true ATE257977T1 (de) | 2004-01-15 |
Family
ID=27367535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT98928969T ATE257977T1 (de) | 1997-06-12 | 1998-06-10 | Bipolar mos-leistungstransistor ohne latch-up |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US6121633A (de) |
| EP (1) | EP0990268B1 (de) |
| JP (1) | JP4143134B2 (de) |
| CN (1) | CN1126180C (de) |
| AT (1) | ATE257977T1 (de) |
| AU (1) | AU8064698A (de) |
| CA (1) | CA2286699C (de) |
| DE (1) | DE69821105T2 (de) |
| WO (1) | WO1998057378A1 (de) |
Families Citing this family (70)
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| DE69835216T2 (de) | 1997-07-25 | 2007-05-31 | Nichia Corp., Anan | Halbleitervorrichtung aus einer nitridverbindung |
| DE19833214C1 (de) * | 1998-07-23 | 1999-08-12 | Siemens Ag | J-FET-Halbleiteranordnung |
| JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
| US6711191B1 (en) | 1999-03-04 | 2004-03-23 | Nichia Corporation | Nitride semiconductor laser device |
| EP1090428B1 (de) * | 1999-04-08 | 2006-08-16 | Philips Electronics N.V. | Durchbruchsdiode und verfahren zur herstellung |
| US6686616B1 (en) * | 2000-05-10 | 2004-02-03 | Cree, Inc. | Silicon carbide metal-semiconductor field effect transistors |
| US6525372B2 (en) * | 2000-11-16 | 2003-02-25 | Silicon Wireless Corporation | Vertical power devices having insulated source electrodes in discontinuous deep trenches |
| WO2002080281A1 (en) * | 2001-04-02 | 2002-10-10 | The Regent Of The University Of California | Horizontal current bipolar transistor |
| JP4865166B2 (ja) * | 2001-08-30 | 2012-02-01 | 新電元工業株式会社 | トランジスタの製造方法、ダイオードの製造方法 |
| US6906350B2 (en) | 2001-10-24 | 2005-06-14 | Cree, Inc. | Delta doped silicon carbide metal-semiconductor field effect transistors having a gate disposed in a double recess structure |
| US6982440B2 (en) * | 2002-02-19 | 2006-01-03 | Powersicel, Inc. | Silicon carbide semiconductor devices with a regrown contact layer |
| US6764907B2 (en) * | 2002-02-19 | 2004-07-20 | Bart J. Van Zeghbroeck | Method of fabricating self-aligned silicon carbide semiconductor devices |
| JP4110875B2 (ja) * | 2002-08-09 | 2008-07-02 | 株式会社デンソー | 炭化珪素半導体装置 |
| US6956239B2 (en) * | 2002-11-26 | 2005-10-18 | Cree, Inc. | Transistors having buried p-type layers beneath the source region |
| JP2005167035A (ja) * | 2003-12-03 | 2005-06-23 | Kansai Electric Power Co Inc:The | 炭化珪素半導体素子およびその製造方法 |
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| US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
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| WO2007032214A1 (ja) * | 2005-09-14 | 2007-03-22 | The Kansai Electric Power Co., Inc. | 炭化珪素半導体素子の製造方法 |
| US7402844B2 (en) * | 2005-11-29 | 2008-07-22 | Cree, Inc. | Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods |
| US7728402B2 (en) | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
| US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
| EP2052414B1 (de) | 2006-08-17 | 2016-03-30 | Cree, Inc. | Bipolare hochleistungstransistoren mit isoliertem gate |
| US7646043B2 (en) * | 2006-09-28 | 2010-01-12 | Cree, Inc. | Transistors having buried p-type layers coupled to the gate |
| US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
| US7687825B2 (en) * | 2007-09-18 | 2010-03-30 | Cree, Inc. | Insulated gate bipolar conduction transistors (IBCTS) and related methods of fabrication |
| JP2009182271A (ja) * | 2008-01-31 | 2009-08-13 | Toshiba Corp | 炭化珪素半導体装置 |
| US8221546B2 (en) * | 2008-03-26 | 2012-07-17 | Ss Sc Ip, Llc | Epitaxial growth on low degree off-axis SiC substrates and semiconductor devices made thereby |
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| US8629509B2 (en) | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
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| US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
| JPWO2012056536A1 (ja) | 2010-10-27 | 2014-03-20 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
| SE1150065A1 (sv) * | 2011-01-31 | 2012-07-17 | Fairchild Semiconductor | Bipolär transistor i kiselkarbid med övervuxen emitter |
| US9673283B2 (en) | 2011-05-06 | 2017-06-06 | Cree, Inc. | Power module for supporting high current densities |
| US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
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| KR20140063703A (ko) * | 2011-08-17 | 2014-05-27 | 램고스, 인크. | 산화물 반도체 기판 상의 수직 전계 효과 트랜지스터 및 그 제조 방법 |
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| US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
| US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
| US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
| US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
| CN102507704A (zh) * | 2011-10-18 | 2012-06-20 | 重庆邮电大学 | 基于碳化硅的肖特基势垒二极管氧传感器及制造方法 |
| JP2013145770A (ja) * | 2012-01-13 | 2013-07-25 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
| JP5790573B2 (ja) * | 2012-04-03 | 2015-10-07 | 株式会社デンソー | 炭化珪素半導体装置およびその製造方法 |
| JP6070526B2 (ja) * | 2013-12-11 | 2017-02-01 | 豊田合成株式会社 | 半導体装置の製造方法 |
| WO2015120432A1 (en) * | 2014-02-10 | 2015-08-13 | United Silicon Carbide, Inc. | Trenched and implanted bipolar junction transistor |
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| DE102017220913A1 (de) * | 2017-11-23 | 2019-05-23 | Robert Bosch Gmbh | Vertikaler Leistungstransistor mit Heteroübergangen |
| US10276667B1 (en) * | 2018-05-31 | 2019-04-30 | Silanna Asia Pte Ltd | High voltage breakdown tapered vertical conduction junction transistor |
| DE102018113573B4 (de) * | 2018-06-07 | 2022-11-03 | Semikron Elektronik Gmbh & Co. Kg Patentabteilung | Diode mit einem Halbleiterkörper |
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| CN111199972B (zh) * | 2018-11-16 | 2023-05-16 | 比亚迪半导体股份有限公司 | 集成级联器件及其制备方法 |
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| US4048649A (en) * | 1976-02-06 | 1977-09-13 | Transitron Electronic Corporation | Superintegrated v-groove isolated bipolar and vmos transistors |
| US4329705A (en) * | 1979-05-21 | 1982-05-11 | Exxon Research & Engineering Co. | VMOS/Bipolar power switching device |
| US5014102A (en) * | 1982-04-01 | 1991-05-07 | General Electric Company | MOSFET-gated bipolar transistors and thyristors with both turn-on and turn-off capability having single-polarity gate input signal |
| EP0159663A3 (de) * | 1984-04-26 | 1987-09-23 | General Electric Company | Thyristoren, Feldeffekttransistoren mit isoliertem Gate und MOSFETs hoher Dichte gesteuert durch eine in einer V-Nut angebrachte MOS-Struktur und Verfahren zur Herstellung |
| JPS61104667A (ja) * | 1984-10-29 | 1986-05-22 | Oki Electric Ind Co Ltd | Ｍｏｓトランジスタ |
| US4725562A (en) * | 1986-03-27 | 1988-02-16 | International Business Machines Corporation | Method of making a contact to a trench isolated device |
| JPS6347983A (ja) * | 1986-08-18 | 1988-02-29 | Sharp Corp | 炭化珪素電界効果トランジスタ |
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| CA1313571C (en) * | 1987-10-26 | 1993-02-09 | John W. Palmour | Metal oxide semiconductor field-effect transistor formed in silicon carbide |
| US5087576A (en) * | 1987-10-26 | 1992-02-11 | North Carolina State University | Implantation and electrical activation of dopants into monocrystalline silicon carbide |
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| US4981551A (en) * | 1987-11-03 | 1991-01-01 | North Carolina State University | Dry etching of silicon carbide |
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-
1998
- 1998-05-21 US US09/082,554 patent/US6121633A/en not_active Expired - Lifetime
- 1998-06-10 WO PCT/US1998/012007 patent/WO1998057378A1/en active IP Right Grant
- 1998-06-10 AT AT98928969T patent/ATE257977T1/de not_active IP Right Cessation
- 1998-06-10 JP JP50314799A patent/JP4143134B2/ja not_active Expired - Lifetime
- 1998-06-10 DE DE69821105T patent/DE69821105T2/de not_active Expired - Lifetime
- 1998-06-10 CA CA002286699A patent/CA2286699C/en not_active Expired - Fee Related
- 1998-06-10 AU AU80646/98A patent/AU8064698A/en not_active Abandoned
- 1998-06-10 EP EP98928969A patent/EP0990268B1/de not_active Expired - Lifetime
- 1998-06-10 CN CN98806110.4A patent/CN1126180C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| CN1260068A (zh) | 2000-07-12 |
| WO1998057378A9 (en) | 1999-07-22 |
| JP4143134B2 (ja) | 2008-09-03 |
| WO1998057378A1 (en) | 1998-12-17 |
| CN1126180C (zh) | 2003-10-29 |
| DE69821105T2 (de) | 2004-07-22 |
| CA2286699A1 (en) | 1998-12-17 |
| JP2002514355A (ja) | 2002-05-14 |
| DE69821105D1 (de) | 2004-02-19 |
| EP0990268B1 (de) | 2004-01-14 |
| AU8064698A (en) | 1998-12-30 |
| CA2286699C (en) | 2006-04-04 |
| EP0990268A1 (de) | 2000-04-05 |
| US6121633A (en) | 2000-09-19 |
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