WO2023008529A1 - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
- Publication number
- WO2023008529A1 WO2023008529A1 PCT/JP2022/029135 JP2022029135W WO2023008529A1 WO 2023008529 A1 WO2023008529 A1 WO 2023008529A1 JP 2022029135 W JP2022029135 W JP 2022029135W WO 2023008529 A1 WO2023008529 A1 WO 2023008529A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- suspension
- pure water
- structures
- sublimable particles
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 307
- 238000000034 method Methods 0.000 title abstract description 29
- 239000002245 particle Substances 0.000 claims abstract description 146
- 239000000725 suspension Substances 0.000 claims abstract description 145
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 141
- 239000007788 liquid Substances 0.000 claims abstract description 94
- 238000000859 sublimation Methods 0.000 claims abstract description 21
- 230000008022 sublimation Effects 0.000 claims abstract description 21
- 239000000126 substance Substances 0.000 claims description 71
- 238000003672 processing method Methods 0.000 claims description 31
- 239000011261 inert gas Substances 0.000 claims description 28
- VEZUQRBDRNJBJY-UHFFFAOYSA-N cyclohexanone oxime Chemical compound ON=C1CCCCC1 VEZUQRBDRNJBJY-UHFFFAOYSA-N 0.000 claims description 18
- 239000000203 mixture Substances 0.000 claims description 7
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 6
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 6
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 6
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 claims description 3
- 229940005561 1,4-benzoquinone Drugs 0.000 claims description 3
- XTRDKALNCIHHNI-UHFFFAOYSA-N 2,6-dinitrotoluene Chemical compound CC1=C([N+]([O-])=O)C=CC=C1[N+]([O-])=O XTRDKALNCIHHNI-UHFFFAOYSA-N 0.000 claims description 3
- CGYGETOMCSJHJU-UHFFFAOYSA-N 2-chloronaphthalene Chemical compound C1=CC=CC2=CC(Cl)=CC=C21 CGYGETOMCSJHJU-UHFFFAOYSA-N 0.000 claims description 3
- ZPTVNYMJQHSSEA-UHFFFAOYSA-N 4-nitrotoluene Chemical compound CC1=CC=C([N+]([O-])=O)C=C1 ZPTVNYMJQHSSEA-UHFFFAOYSA-N 0.000 claims description 3
- 241000723346 Cinnamomum camphora Species 0.000 claims description 3
- 229960000846 camphor Drugs 0.000 claims description 3
- 229930008380 camphor Natural products 0.000 claims description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 3
- -1 P-cresol Chemical compound 0.000 claims description 2
- 238000005406 washing Methods 0.000 claims description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 60
- 239000000243 solution Substances 0.000 description 32
- 230000008569 process Effects 0.000 description 24
- 238000010586 diagram Methods 0.000 description 22
- 238000001035 drying Methods 0.000 description 20
- 230000000903 blocking effect Effects 0.000 description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 15
- 230000007246 mechanism Effects 0.000 description 15
- 239000003960 organic solvent Substances 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 12
- 239000008367 deionised water Substances 0.000 description 11
- 229910021641 deionized water Inorganic materials 0.000 description 11
- 239000012530 fluid Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000003002 pH adjusting agent Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 238000005092 sublimation method Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 241000519995 Stachys sylvatica Species 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000002612 dispersion medium Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010977 unit operation Methods 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
Definitions
- a wafer is held on a rotary table and rotated at 80 rpm, first a hydrofluoric acid solution is supplied from a nozzle onto the wafer surface, and then pure water is supplied from the nozzle onto the wafer surface.
- IPA isopropyl alcohol
- IPA is dissolved in pure water, and the pure water is completely replaced by IPA by being pushed out by the Marangoni effect and centrifugal force due to rotation, thereby removing the pure water.
- spin drying is performed by rotating at 300 rpm for 1 second, then at 2000 rpm for 4 seconds, and finally at 4000 rpm for 15 seconds.
- the control device 2 includes a control unit 21 and a storage unit 22.
- the control unit 21 includes a processor such as a CPU (Central Processing Unit).
- the storage unit 22 includes a storage device and stores data and computer programs. Specifically, the storage unit 22 includes a main storage device such as a semiconductor memory, and an auxiliary storage device such as a semiconductor memory, a solid state drive, and/or a hard disk drive.
- the storage unit 22 may include removable media.
- the storage unit 22 corresponds to an example of a non-temporary computer-readable storage medium.
- the suspension nozzle 17 supplies suspension onto the upper surface of the substrate W.
- pipe 9 supplies suspension to suspension nozzle 17 .
- a valve 8 is arranged in the pipe 9 .
- the valve 8 opens and closes the flow path of the pipe 9 to switch between supplying and stopping the supply of the suspension to the suspension nozzle 17 .
- the suspension nozzle 17 supplies the suspension toward the substrate W.
- the pipe 9 is connected to a suspension tank that stores suspension.
- FIG. 3A is a side view showing a state in which the liquid film 26 of the suspension 25 covers the upper surface of the substrate W.
- FIG. 3(b) is a side view showing an enlarged part of the liquid film 26 of the suspension 25 and part of the substrate W shown in FIG. 3(a).
- the suspension nozzle 17 forms a liquid film 26 of the suspension 25 on the upper surface of the substrate W by supplying the suspension 25 to the upper surface of the substrate W. As shown in FIG. 3A, the suspension nozzle 17 forms a liquid film 26 of the suspension 25 on the upper surface of the substrate W by supplying the suspension 25 to the upper surface of the substrate W. As shown in FIG. 3A, the suspension nozzle 17 forms a liquid film 26 of the suspension 25 on the upper surface of the substrate W by supplying the suspension 25 to the upper surface of the substrate W. As shown in FIG.
- FIG. 5(a) shows that the pure water 251 is removed from the suspension 25 after the pure water removal step is completed, and the sublimable particles 252 are deposited between the structures 23 forming the pattern PT of the substrate W. It is a figure which shows a state.
- FIG. 5(b) is a diagram showing a state during sublimation of the sublimable particles 252 from between the structures 23 in the particle sublimation process.
- FIG. 5(c) is a diagram showing a state in which the sublimable particles 252 are removed from between the structures 23 after the particle sublimation process is completed.
- a first direction D1 indicates a direction intersecting with the substrate W.
- the first direction D1 indicates a direction substantially perpendicular to the substrate W.
- the second direction D2 crosses the first direction D1.
- the second direction D2 is substantially orthogonal to the first direction D1.
- the gap G between adjacent structures 23 is, for example, 10 nm or more and 100 nm or less.
- the structure 23 extends along the first direction D1.
- FIG. 4A merely shows the structure 23 schematically, and the structure 23 can have any shape and configuration according to the intended use of the substrate W.
- FIG. 4A merely shows the structure 23 schematically, and the structure 23 can have any shape and configuration according to the intended use of the substrate W.
- the structure 23 is composed of a single layer or multiple layers.
- the structure 23 is an insulating layer, a semiconductor layer, or a conductor layer.
- the structure 23 may include an insulating layer, a semiconductor layer, or a conductor layer, or may include an insulating layer, a semiconductor layer, and a conductor layer. may include two or more of
- the insulating layer is, for example, a silicon oxide film or a silicon nitride film.
- the semiconductor layer is, for example, a polysilicon film or an amorphous silicon film.
- the conductor layer is, for example, a metal film.
- the metal film is, for example, a film containing at least one of titanium, tungsten, copper, and aluminum.
- the chemical nozzle 14 supplies the chemical solution 27 to the upper surface of the substrate W in the chemical solution supply step. As a result, the substrate W is treated with the chemical solution 27 .
- the suspension nozzle 17 supplies the suspension 25 onto the upper surface of the substrate W in the suspension supply step. As a result, a liquid film 26 of the suspension 25 is formed on the upper surface of the substrate W.
- FIG. The suspension 25 is a substance in which pure water 251 and a plurality of sublimable particles 252 (a large number of sublimable particles 252) are mixed. In suspension 25 , a plurality of sublimable particles 252 are dispersed in pure water 251 . The sublimable particles 252 prevent the structure 23 from collapsing when the substrate W is dried. Details of this point will be described later.
- the particle diameter (size) of the sublimable particles 252 is, for example, several nanometers or more and several tens of nanometers or less.
- the particle size of the sublimable particles 252 is 20 nm.
- the density of the sublimable particles 252 in the suspension 25 is, for example, a volume fraction of 0.1 or more and 0.9 or less.
- the density of the sublimable particles 252 in the suspension 25 is such that, for example, when the pure water removal step (FIG. 4(c)) is completed, the sublimable particles 252 are " M/10" or more.
- M is a real number.
- M is, for example, "1", preferably "2", more preferably "3", more preferably "4", more preferably "5", more preferably "6", more preferably "7”
- Preferred is "8", more preferred is "9", and most preferred is "10”.
- the more sublimable particles 252 occupying the space SP between the structures 23 when the pure water removal step (FIG. 4(c)) is completed, the more effectively the collapse of the structure 23 can be suppressed. is. Details of this point will be described later.
- the pattern PT is formed on the substrate W.
- a plurality of sublimable particles 252 are deposited between the structures 23 over the entire area covered with the substrate.
- the plurality of sublimable particles 252 are spread between the structures 23 .
- the plurality of sublimable particles 252 are filled between the structures 23 . Therefore, multiple structures 23 are supported by multiple sublimable particles 252 .
- the suspension 25 is supplied to the upper surface of the substrate W as shown in FIG. 4(b).
- the sublimable particles 252 have already entered between the structures 23 .
- the pure water 251 is removed from the suspension 25 as shown in FIG. 4(c).
- the lowering of the liquid surface 251a of the pure water 251 pushes the sublimable particles 252 downward toward the pattern PT.
- the sublimable particles 252 for suppressing collapse of the structures 23 forming the pattern PT of the substrate W can easily enter and deposit between the structures 23 . That is, the pure water 251 allows the sublimable particles 252 to easily enter and deposit between the structures 23 .
- the "predetermined process ST” is, for example, a rinsing process (rinsing liquid supplying process), and pure water is used as the rinsing liquid.
- the “rinsing step (rinsing solution supplying step)” indicates a step of washing away from the substrate W the chemical solution, the by-product after treatment with the chemical solution, and/or the foreign matter.
- the control unit 21 shown in FIG. 2 executes pure water removal control.
- the pure water removal control indicates control for removing the pure water 251 from the upper surface of the substrate W while allowing the sublimable particles 252 to remain between the structures 23 adjacent to each other.
- the controller 21 controls the spin motor 13 to rotate the spin chuck 12 .
- the substrate W rotates.
- pure water removal control indicates control for rotating the substrate W by the spin motor 13 .
- the execution time of the pure water removal control is longer than the execution time of the predetermined process ST.
- M is a real number.
- M is, for example, "1”, preferably “2", more preferably “3”, more preferably "4", more preferably "5", more preferably “6", more preferably "7”
- Preferred is "8", more preferred is “9”, and most preferred is "10”.
- the pure water 251 is removed and the sublimable particles 252 remain between the structures 23 adjacent to each other. ing.
- a plurality of sublimable particles 252 are deposited between structures 23 .
- a plurality of sublimable particles 252 are spread between the structures 23 and 23 .
- a plurality of sublimable particles 252 are filled between the structures 23 .
- the sublimable particles 252 remaining between the structures 23 are sublimated. That is, the sublimable particles 252 deposited between the structures 23 are sublimated.
- the sublimable particles 252 can be removed from the substrate W while the substrate W is maintained in a dry state.
- the sublimable particles 252 are removed from between the structures 23 adjacent to each other.
- the suspension 25 in which the pure water 251 and the plurality of sublimation particles 252 are mixed is supplied to the upper surface of the substrate W. Then, the pure water 251 is removed from the upper surface of the substrate W so that the sublimable particles 252 remain (accumulate) between the structures 23 adjacent to each other. Therefore, when the pure water 251 is removed from the substrate W, the sublimable particles 252 support the structure 23 . As a result, collapse of the structure 23 due to the surface tension of the pure water 251 can be suppressed.
- the sublimable particles 252 remaining (accumulated) between the structures 23 are sublimated, and the drying of the substrate W is completed.
- collapse of the structure 23 forming the pattern PT of the substrate W can be suppressed without using an organic solvent such as IPA.
- Embodiment 1 since an organic solvent such as IPA is not used when drying the substrate W, metal contamination of the substrate W by trace metals can be prevented. For example, metal contamination levels of less than 1E8 (atoms/cm 2 ) within the top surface of the substrate W are readily achievable. Therefore, the quality and reliability of devices obtained from the substrate W can be improved. For example, when an image sensor is produced from the substrate W, it is possible to prevent the occurrence of pixel defects called white spots caused by trace metals even when deep trenches around the color filter portion of the image sensor are dried.
- organic solvent such as IPA
- FIG. 6A is a diagram showing a state where the pattern PT of the substrate W is covered with the chemical solution 27 in the chemical solution supply process.
- FIG. 6B is a diagram showing a state in which the pattern PT of the substrate W is covered with the suspension 25 in the suspension supply step.
- FIG. 6C is a diagram showing a state in which pure water 251 is reduced from suspension 25 and sublimable particles 252 are deposited between structures 23 forming pattern PT in the pure water removal process. .
- FIG. 6A is a diagram showing a state where the pattern PT of the substrate W is covered with the chemical solution 27 in the chemical solution supply process.
- FIG. 6B is a diagram showing a state in which the pattern PT of the substrate W is covered with the suspension 25 in the suspension supply step.
- FIG. 6C is a diagram showing a state in which pure water 251 is reduced from suspension 25 and sublimable particles 252 are deposited between structures 23 forming pattern PT in the pure water removal process. .
- FIG. 7A shows that the pure water 251 is removed from the suspension 25 after the pure water removing process is completed, and the sublimable particles 252 are deposited between the structures 23 forming the pattern PT of the substrate W. It is a figure which shows a state.
- FIG. 7(b) is a diagram showing a state during sublimation of the sublimable particles 252 from between the structures 23 in the particle sublimation step.
- FIG. 7(c) is a diagram showing a state in which the sublimable particles 252 are removed from between the structures 23 after the particle sublimation process is completed. Differences from the contents described with reference to FIGS. 4 and 5 will be mainly described below.
- the substrate W has a pattern PT.
- each of the multiple structures 23 has a structure 241 and multiple protrusions 242 .
- the structure 241 extends along the first direction D1.
- the convex portion 242 protrudes from the structure 241 along the second direction D2.
- the plurality of protrusions 242 are formed at intervals in the first direction D1. Therefore, a space SPX exists between the convex portions 242 facing each other in the second direction D2.
- FIG. 6A merely shows the structure 23 schematically, and the structure 23 can have any shape and configuration according to the intended use of the substrate W.
- FIG. 6A merely shows the structure 23 schematically, and the structure 23 can have any shape and configuration according to the intended use of the substrate W.
- the chemical nozzle 14 supplies the chemical solution 27 to the upper surface of the substrate W in the chemical solution supply step. As a result, the substrate W is treated with the chemical solution 27 .
- the suspension nozzle 17 supplies the suspension 25 onto the upper surface of the substrate W in the suspension supply step. As a result, a liquid film 26 of the suspension 25 is formed on the upper surface of the substrate W.
- the particle size (size) of the sublimable particles 252 is smaller than the gap G between the structures 23 adjacent to each other. Therefore, the sublimable particles 252 enter between the structures 23 in the suspension supply step.
- the interval G indicates, for example, the interval between the closest portions of the structures 23 adjacent to each other in the first direction D1.
- pure water is poured from the upper surface of the substrate W so that the sublimable particles 252 remain between the structures 23 adjacent to each other. 251 is eliminated (removed).
- the pure water 251 is removed (removed) from the substrate W by rotating the substrate W while the supply of the suspension 25 is stopped.
- the liquid level 251a of the pure water 251 descends as the pure water 251 evaporates in the region 262 shown in FIG. 3(b).
- Sublimable particles 252 remain between the structures 23 adjacent to each other in the first direction D1.
- the sublimable particles 252 also remain between the convex portions 242 adjacent to each other in the second direction D2. Therefore, according to Embodiment 1, when the pure water 251 is removed from the substrate W, the sublimable particles 252 support not only the structure 241 but also the protrusions 242 . As a result, it is possible to prevent the structures 241 and the projections 242 from collapsing due to the surface tension of the pure water 251 .
- the entire region of the substrate W where the pattern PT is formed is covered in the first direction D1.
- a plurality of sublimable particles 252 are deposited between adjacent structures 23, and a plurality of sublimable particles 252 are deposited between adjacent convex portions 242 in the second direction D2. is filled.
- the plurality of sublimable particles 252 are spread between the structures 23 and between the protrusions 242 . Therefore, the structure 241 and the projections 242 of the structure 23 are supported by the multiple sublimable particles 252 .
- the surface tension of the pure water 251 can prevent the structures 241 and the projections 242 from collapsing.
- the suspension 25 is supplied to the upper surface of the substrate W as shown in FIG. 6(b).
- the sublimable particles 252 already enter between the structures 23 adjacent in the first direction D1 and between the convex portions 242 adjacent in the second direction D2. are doing.
- the pure water 251 is removed from the suspension 25 as shown in FIG. 6(c).
- the lowering of the liquid surface 251a of the pure water 251 pushes the sublimable particles 252 downward toward the pattern PT.
- the sublimable particles 252 can easily enter and deposit between the structures 23 and between the structures 23, 252 can be easily entered and filled.
- the pure water 251 is removed, and the gap between the structures 23 adjacent in the first direction D1 and between the structures 23 and the first The sublimable particles 252 remain between the convex portions 242 adjacent to each other in the two directions D2.
- a plurality of sublimable particles 252 are deposited between structures 23 and a plurality of sublimable particles 252 are deposited between convex portions 242 . is filled. In other words, a plurality of sublimable particles 252 are spread between structures 23 and between protrusions 242 and 242 .
- the sublimable particles 252 are sublimated.
- the sublimable particles 252 can be removed from the substrate W while the substrate W is maintained in a dry state.
- the pattern PT of the substrate W is formed by the suspension supply process, the pure water removal process, and the particle sublimation process without using an organic solvent.
- the substrate W treated with the chemical solution 27 can be dried while suppressing collapse of the structure 23 .
- FIG. A substrate processing apparatus 100 executes a substrate processing method.
- a substrate W having a pattern PT including a plurality of structures 23 is processed.
- FIG. 8 is a flow chart showing a substrate processing method. As shown in FIG. 8, the substrate processing method includes steps S1 to S6. Steps S1 to S6 are executed under the control of the control section 21.
- the central robot CR loads the substrate W into the processing unit 1 in step S1.
- the spin chuck 12 holds the substrate W in the processing unit 1 .
- the spin motor 13 rotates the substrate W by rotating the spin chuck 12 .
- step S2 the chemical liquid nozzle 14 supplies the chemical liquid 27 to the upper surface of the substrate W during rotation.
- the chemical liquid nozzle 14 stops supplying the chemical liquid 27 when supplying the chemical liquid 27 during a predetermined chemical liquid supply period.
- Step S2 corresponds to an example of the "chemical supply step" of the present invention.
- step S3 the suspension nozzle 17 forms a liquid film 26 of the suspension 25 on the upper surface of the substrate W by supplying the suspension 25 onto the upper surface of the substrate W during rotation.
- the suspension nozzle 17 stops supplying the suspension 25 after supplying the suspension 25 during a predetermined suspension supply period.
- Step S3 corresponds to an example of the "suspension supply step" of the present invention.
- the step S3 also functions as a rinsing step. This is because the chemical solution 27 is washed away by the pure water 251 . Therefore, in this case, since the rinsing process can be omitted, the number of man-hours for processing the substrate W can be reduced.
- step S4 the pure water 251 is removed from the upper surface of the substrate W so that the sublimable particles 252 remain between the structures 23 adjacent to each other on the substrate W. That is, in step S4, the control unit 21 executes pure water removal control. Step S4 is performed, for example, during a predetermined pure water removal period. Step S4 corresponds to an example of the "pure water removal step" of the present invention.
- step S4 the spin motor 13 continues to rotate the spin chuck 12 and the substrate W from step S3. That is, the spin motor 13 removes the pure water 251 from the substrate W by rotating the substrate W on which the liquid film 26 is formed.
- the suspension 25 is removed from the substrate W by the flow of the suspension 25 due to the centrifugal force.
- the pure water 251 forming the suspension 25 is vaporized, and the pure water 251 is removed from the substrate W.
- the sublimable particles 252 remain between the structures 23 at least during the period T in which the pure water 251 evaporates from between the structures 23 and 23 .
- the sublimable particles 252 are deposited between the structures 23 and 23 .
- the structure 23 is supported by the sublimable particles 252 , so collapse of the structure 23 due to the surface tension of the pure water 251 can be suppressed.
- the pure water 251 allows the sublimable particles 252 to easily enter between the structures 23 .
- step S5 the sublimable particles 252 remaining between the structures 23 of the substrate W are sublimated. Specifically, even in step S5, the spin motor 13 continues to rotate the spin chuck 12 and the substrate W from step S4. That is, the spin motor 13 rotates the substrate W to promote sublimation of the sublimable particles 252 . It should be noted that the sublimable particles 252 may be naturally sublimated while the substrate W is in the stopped state.
- the rotational speed of the substrate W in step S5 is, for example, the same as the rotational speed of the substrate W in step S4. However, the rotation speed of the substrate W in step S5 may be higher or lower than the rotation speed of the substrate W in step S4.
- the rotation speed of the substrate W in step S5 is determined experimentally and/or empirically, for example.
- the spin motor 13 stops the rotation of the substrate W by stopping the rotation of the spin chuck 12 after executing step S5 for the first predetermined period.
- the spin motor 13 may stop the rotation of the substrate W by stopping the rotation of the spin chuck 12 after performing the steps S4 to S5 for a second predetermined period.
- the first predetermined period and the second predetermined period are determined experimentally and/or empirically, for example.
- step S6 the center robot CR unloads the substrate W from the processing unit 1.
- the substrate processing method then ends.
- the substrate W after being processed with the chemical liquid 27 is processed by performing the steps S3, S4, and S5. Collapse of the structure 23 forming the pattern PT of the substrate W can be suppressed without using an organic solvent such as IPA during drying.
- the suspension exhibits alkalinity due to the pH adjuster.
- the pH of the suspension is 9 or greater.
- the pH adjuster is a base.
- a base is, for example, ammonia.
- the suspension exhibits acidity due to the pH adjuster.
- the suspension has a hydrogen ion exponent of 4 or less.
- the pH adjuster is an acid.
- the acid is, for example, hydrochloric acid.
- FIG. 2 A substrate processing apparatus 100 according to a second embodiment of the present invention will be described with reference to FIGS. 9 and 10.
- FIG. The second embodiment is mainly different from the first embodiment in that the substrate processing apparatus 100 according to the second embodiment performs the rinse solution supply process before the suspension supply process.
- the overall configuration of the substrate processing apparatus 100 according to the second embodiment is similar to the overall configuration of the substrate processing apparatus 100 according to the first embodiment described with reference to FIG. In the following, differences of the second embodiment from the first embodiment will be mainly described.
- FIG. 9 is a side view showing the inside of the processing unit 1 according to the second embodiment.
- the processing unit 1 according to the second embodiment has the configuration of the processing unit 1 according to the first embodiment shown in FIG. and an operating portion 42 .
- the substrate processing apparatus 100 according to the second embodiment includes pipes 43 and valves 44 in addition to the configuration of the substrate processing apparatus 100 according to the first embodiment shown in FIG.
- the chamber 11 accommodates the rinse liquid nozzle 31 , the inert gas supply unit 41 , the unit operating section 42 , a portion of the pipe 32 and a portion of the pipe 43 .
- the rinse liquid nozzle 31 supplies the upper surface of the substrate W with the rinse liquid.
- the pipe 32 supplies the rinse liquid to the rinse liquid nozzle 31 .
- a valve 33 is arranged in the pipe 32 .
- the valve 33 opens and closes the flow path of the pipe 32 to switch between supplying and stopping the supply of the rinsing liquid to the rinsing liquid nozzle 31 .
- the rinse liquid nozzle 31 supplies the rinse liquid toward the substrate W when the valve 33 opens the flow path of the pipe 32 .
- the rinse liquid is pure water.
- the rinse liquid nozzle 31 corresponds to an example of the "rinse liquid supply section" of the present invention.
- the rinse liquid nozzle 31 can be moved up and down or horizontally rotated by a nozzle moving section (not shown) having the same configuration as the nozzle moving section 15 .
- the inert gas supply unit 41 supplies the substrate W with an inert gas. Specifically, the inert gas supply unit 41 is positioned above the spin chuck 12 .
- the inert gas supply unit 41 includes a blocking plate 411 , a support shaft 413 and a gas nozzle 415 .
- the gas nozzle 415 supplies an inert gas to the upper surface of the substrate W.
- the pipe 43 supplies inert gas to the gas nozzle 415 .
- a valve 44 is arranged in the pipe 43 .
- the valve 44 opens and closes the passage of the pipe 43 to switch between supplying and stopping the supply of the inert gas to the gas nozzle 415 .
- the gas nozzle 415 supplies the inert gas toward the upper surface of the substrate W.
- FIG. Inert gases are, for example, nitrogen or argon.
- the gas nozzle 415 corresponds to an example of the "inert gas supply section" of the present invention.
- step S11 is the same as step S1 in FIG.
- step S12 the chemical liquid nozzle 14 supplies the chemical liquid 27 to the upper surface of the substrate W during rotation.
- step S12 is the same as step S2 in FIG.
- Step S12 corresponds to an example of the "chemical supply step" of the present invention.
- step S13 the rinse liquid nozzle 31 washes away the chemical liquid 27 from the substrate W by supplying the rinse liquid to the upper surface of the substrate W during rotation. That is, after step S12, the rinse liquid nozzle 31 washes away the chemical liquid 27 from the substrate W by supplying the rinse liquid to the upper surface of the substrate W during rotation.
- the rinse liquid nozzle 31 stops supplying the rinse liquid when supplying the rinse liquid during a predetermined rinse liquid supply period.
- Step S13 corresponds to an example of the "rinse liquid supply step" of the present invention.
- step S14 the suspension nozzle 17 supplies the suspension 25 onto the upper surface of the substrate W during rotation. Specifically, the suspension nozzle 17 forms a liquid film 26 of the suspension 25 on the upper surface of the substrate W by supplying the suspension 25 to the upper surface of the substrate W during rotation. That is, step S14 is performed after step S13. Otherwise, step S14 is the same as step S3 in FIG. Step S14 corresponds to an example of the "suspension supply step" of the present invention.
- the suspension 25 contains the pure water 251
- the chemical solution 27 can be discharged from the substrate W more effectively in combination with step S13.
- the suspension 25 may contain the pH adjuster according to the modified example of the first embodiment.
- step S15 the pure water 251 is removed from the upper surface of the substrate W so that the sublimable particles 252 remain between the structures 23 adjacent to each other on the substrate W. That is, in step S15, the control unit 21 executes pure water removal control. Otherwise, step S15 is the same as step S4 in FIG. Step S15 corresponds to an example of the "pure water removal step" of the present invention.
- step S17 is executed in parallel with step S16.
- step S16 the sublimable particles 252 remaining between the structures 23 of the substrate W are sublimated. Otherwise, step S16 is the same as step S5 in FIG. Step S16 corresponds to an example of the "particle sublimation step" of the present invention.
- step S17 the gas nozzle 415 supplies inert gas to the upper surface of the substrate W during rotation.
- the sublimation of the sublimable particles 252 can be further promoted.
- the gas nozzle 415 stops supplying the inert gas after supplying the inert gas during a predetermined inert gas supply period (for example, the first predetermined period).
- Step S17 corresponds to an example of the "inert gas supply step" of the present invention.
- step S17 may be started in parallel with step S15.
- the gas nozzle 415 may supply the inert gas to the upper surface of the substrate W during the execution of steps S15 and S16. In this case, removal of the pure water 251 and sublimation of the sublimable particles 252 can be promoted more.
- step S ⁇ b>18 the center robot CR unloads the substrate W from the processing unit 1 .
- the substrate processing method then ends.
- the substrate processing method by executing steps S12 to S16, when drying the substrate W after processing with the chemical liquid 27, Collapse of the structure 23 forming the pattern PT of the substrate W can be suppressed without using an organic solvent such as IPA.
- the substrate processing method may not include step S13 or step S17.
- Examples 1 to 3 of the present invention and a comparative example will be described with reference to FIG.
- 1 cm ⁇ 1 cm square coupon samples were used. Coupon samples were silicone. A large number of pillars were formed on the upper surface of the coupon sample.
- a DIW liquid film was formed on the upper surface of the coupon sample.
- DIW did not contain cyclohexanone oxime.
- the DIW did not contain organic solvents such as IPA. Then, the coupon sample on which the DIW liquid film was formed was left to dry. That is, the DIW was air-dried. Coupon samples after drying were observed by SEM.
- the present invention relates to a substrate processing method and a substrate processing apparatus, and has industrial applicability.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Molecular Biology (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
Abstract
Description
図1~図8を参照して、本発明の実施形態1に係る基板処理装置100及び基板処理方法を説明する。まず、図1を参照して、基板処理装置100を説明する。図1は、基板処理装置100の内部を示す平面図である。図1に示す基板処理装置100は、複数の構造物を含むパターンを有する基板Wを処理する。
本発明の実施形態1の変形例を説明する。変形例では、懸濁液がpH調整剤を含有する点で、図1~図8を参照して説明した実施形態1と主に異なる。以下、変形例が実施形態1と異なる点を主に説明する。
図9及び図10を参照して、本発明の実施形態2に係る基板処理装置100を説明する。実施形態2に係る基板処理装置100が懸濁液供給工程の前にリンス液供給工程を実行する点で、実施形態2は実施形態1と主に異なる。その他、実施形態2に係る基板処理装置100の全体構成は、図1を参照して説明した実施形態1に係る基板処理装置100の全体構成と同様である。以下、実施形態2が実施形態1と異なる点を主に説明する。
13 スピンモーター(基板回転部)
17 懸濁液ノズル(懸濁液供給部)
100 基板処理装置
W 基板
Claims (6)
- 複数の構造物を含むパターンを有する基板を処理する基板処理方法であって、
純水と複数の昇華性粒子とが混在した懸濁液を、前記基板の上面に供給することで、前記懸濁液の液膜を前記基板の上面に形成する懸濁液供給工程と、
互いに隣り合う前記構造物と前記構造物との間に前記昇華性粒子が残留するように、前記基板の上面から前記純水を排除する純水排除工程と、
前記構造物と前記構造物との間に残留した前記昇華性粒子を昇華させる粒子昇華工程と
を含む、基板処理方法。 - 前記懸濁液の水素イオン指数は、4以下又は9以上である、請求項1に記載の基板処理方法。
- 前記粒子昇華工程と並行して、前記基板の上面に不活性ガスを供給する不活性ガス供給工程を更に含む、請求項1又は請求項2に記載の基板処理方法。
- 前記懸濁液供給工程よりも前において、薬液を前記基板の上面に供給する薬液供給工程と、
前記薬液供給工程の次に、リンス液を前記基板の上面に供給することで、前記薬液を洗い流すリンス液供給工程と
を更に含み、
前記懸濁液供給工程は、前記リンス液供給工程の次に実行され、
前記純水排除工程では、前記基板を回転させることで、前記基板から前記純水を排除する、請求項1から請求項3のいずれか1項に記載の基板処理方法。 - 前記昇華性粒子は、シクロヘキサノンオキシム、樟脳、ナフタレン、P-クレゾール、1,4-ベンゾキノン、2-クロロナフタレン、4-ニトロトルエン、ジフェニルエーテル、又は、2,6-ジニトロトルエンである、請求項1から請求項4のいずれか1項に記載の基板処理方法。
- 複数の構造物を含むパターンを有する基板を処理する基板処理装置であって、
前記基板を保持する基板保持部と、
純水と複数の昇華性粒子とが混在した懸濁液を、前記基板の上面に供給することで、前記懸濁液の液膜を前記基板の上面に形成する懸濁液供給部と、
前記基板保持部を回転させることで、前記液膜が形成された前記基板を回転させる基板回転部と
を備える、基板処理装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020247005174A KR20240033045A (ko) | 2021-07-30 | 2022-07-28 | 기판 처리 방법 및 기판 처리 장치 |
CN202280053263.1A CN117836907A (zh) | 2021-07-30 | 2022-07-28 | 基板处理方法及基板处理装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021125894A JP2023020501A (ja) | 2021-07-30 | 2021-07-30 | 基板処理方法及び基板処理装置 |
JP2021-125894 | 2021-07-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2023008529A1 true WO2023008529A1 (ja) | 2023-02-02 |
Family
ID=85086821
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2022/029135 WO2023008529A1 (ja) | 2021-07-30 | 2022-07-28 | 基板処理方法及び基板処理装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2023020501A (ja) |
KR (1) | KR20240033045A (ja) |
CN (1) | CN117836907A (ja) |
TW (1) | TWI813405B (ja) |
WO (1) | WO2023008529A1 (ja) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017139279A (ja) * | 2016-02-02 | 2017-08-10 | 株式会社東芝 | 基板乾燥装置、および基板処理システム |
JP2017152600A (ja) * | 2016-02-26 | 2017-08-31 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2018107426A (ja) * | 2016-12-26 | 2018-07-05 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP2018139331A (ja) * | 2018-06-13 | 2018-09-06 | 東京エレクトロン株式会社 | 基板乾燥方法及び基板処理装置 |
JP2020004948A (ja) * | 2018-06-22 | 2020-01-09 | 株式会社Screenホールディングス | 基板処理方法、基板処理装置、および乾燥前処理液 |
WO2020241022A1 (ja) * | 2019-05-29 | 2020-12-03 | 株式会社Screenホールディングス | 昇華性物質含有液の製造方法、基板乾燥方法、および基板処理装置 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3402932B2 (ja) | 1995-05-23 | 2003-05-06 | 東京エレクトロン株式会社 | 洗浄方法及びその装置 |
-
2021
- 2021-07-30 JP JP2021125894A patent/JP2023020501A/ja active Pending
-
2022
- 2022-07-28 CN CN202280053263.1A patent/CN117836907A/zh active Pending
- 2022-07-28 KR KR1020247005174A patent/KR20240033045A/ko unknown
- 2022-07-28 WO PCT/JP2022/029135 patent/WO2023008529A1/ja active Application Filing
- 2022-07-29 TW TW111128471A patent/TWI813405B/zh active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017139279A (ja) * | 2016-02-02 | 2017-08-10 | 株式会社東芝 | 基板乾燥装置、および基板処理システム |
JP2017152600A (ja) * | 2016-02-26 | 2017-08-31 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
JP2018107426A (ja) * | 2016-12-26 | 2018-07-05 | 株式会社Screenホールディングス | 基板処理装置及び基板処理方法 |
JP2018139331A (ja) * | 2018-06-13 | 2018-09-06 | 東京エレクトロン株式会社 | 基板乾燥方法及び基板処理装置 |
JP2020004948A (ja) * | 2018-06-22 | 2020-01-09 | 株式会社Screenホールディングス | 基板処理方法、基板処理装置、および乾燥前処理液 |
WO2020241022A1 (ja) * | 2019-05-29 | 2020-12-03 | 株式会社Screenホールディングス | 昇華性物質含有液の製造方法、基板乾燥方法、および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2023020501A (ja) | 2023-02-09 |
KR20240033045A (ko) | 2024-03-12 |
TW202313213A (zh) | 2023-04-01 |
TWI813405B (zh) | 2023-08-21 |
CN117836907A (zh) | 2024-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102068443B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
JP6199155B2 (ja) | 犠牲膜除去方法および基板処理装置 | |
TWI666697B (zh) | 基板處理方法、基板處理裝置及記憶媒體 | |
TWI809652B (zh) | 基板處理方法及基板處理裝置 | |
JP5963075B2 (ja) | 基板処理方法および基板処理装置 | |
KR102152911B1 (ko) | 기판 세정 조성물, 기판 처리 방법 및 기판 처리 장치 | |
WO2023008529A1 (ja) | 基板処理方法及び基板処理装置 | |
JP7265390B2 (ja) | 基板処理装置および基板処理方法 | |
KR102518117B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
WO2020105376A1 (ja) | 基板処理方法および基板処理装置 | |
WO2022201830A1 (ja) | 基板処理方法及び基板処理装置 | |
US20190080902A1 (en) | Substrate cleaning composition, substrate treating method, and substrate treating apparatus | |
JP7130791B2 (ja) | 基板処理方法および基板処理装置 | |
US20240120212A1 (en) | Substrate treating method, substrate treating apparatus and substrate treating liquid | |
WO2023166970A1 (ja) | 基板処理方法 | |
WO2023176824A1 (ja) | 基板処理方法と処理液評価方法 | |
JP2022035122A (ja) | 基板処理装置および基板処理方法 | |
JP2024078250A (ja) | 基板処理方法および基板処理装置 | |
TW202414556A (zh) | 基板處理方法、基板處理裝置及基板處理液 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 22849590 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 202280053263.1 Country of ref document: CN |
|
ENP | Entry into the national phase |
Ref document number: 20247005174 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020247005174 Country of ref document: KR |
|
NENP | Non-entry into the national phase |
Ref country code: DE |