TWI813405B - 基板處理方法及基板處理裝置 - Google Patents

基板處理方法及基板處理裝置 Download PDF

Info

Publication number: TWI813405B
Authority: TW; Taiwan
Prior art keywords: substrate; suspension; pure water; mentioned; structures
Prior art date: 2021-07-30

Application number

TW111128471A

Other languages

English (en)

Chinese (zh)

Other versions

TW202313213A (zh

Inventor

田中孝佳

山口佑

Original Assignee

日商斯庫林集團股份有限公司

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2021-07-30

Filing date

2022-07-29

Publication date

2023-08-21

2022-07-29 Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司

2023-04-01 Publication of TW202313213A publication Critical patent/TW202313213A/zh

2023-08-21 Application granted granted Critical

2023-08-21 Publication of TWI813405B publication Critical patent/TWI813405B/zh

Links

239000000758 substrate Substances 0.000 title claims abstract description 307
238000003672 processing method Methods 0.000 title claims abstract description 32
238000012545 processing Methods 0.000 title claims description 51
239000002245 particle Substances 0.000 claims abstract description 151
239000000725 suspension Substances 0.000 claims abstract description 146
XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 135
239000007788 liquid Substances 0.000 claims abstract description 115
238000000859 sublimation Methods 0.000 claims abstract description 34
230000008022 sublimation Effects 0.000 claims abstract description 34
239000000126 substance Substances 0.000 claims description 68
239000011261 inert gas Substances 0.000 claims description 30
VEZUQRBDRNJBJY-UHFFFAOYSA-N cyclohexanone oxime Chemical compound ON=C1CCCCC1 VEZUQRBDRNJBJY-UHFFFAOYSA-N 0.000 claims description 18
238000011010 flushing procedure Methods 0.000 claims description 14
238000000034 method Methods 0.000 claims description 10
AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 claims description 6
UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 claims description 6
IWDCLRJOBJJRNH-UHFFFAOYSA-N p-cresol Chemical compound CC1=CC=C(O)C=C1 IWDCLRJOBJJRNH-UHFFFAOYSA-N 0.000 claims description 6
USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 claims description 5
GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 claims description 5
230000008569 process Effects 0.000 claims description 5
DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 claims description 3
229940005561 1,4-benzoquinone Drugs 0.000 claims description 3
XTRDKALNCIHHNI-UHFFFAOYSA-N 2,6-dinitrotoluene Chemical compound CC1=C([N+]([O-])=O)C=CC=C1[N+]([O-])=O XTRDKALNCIHHNI-UHFFFAOYSA-N 0.000 claims description 3
CGYGETOMCSJHJU-UHFFFAOYSA-N 2-chloronaphthalene Chemical compound C1=CC=CC2=CC(Cl)=CC=C21 CGYGETOMCSJHJU-UHFFFAOYSA-N 0.000 claims description 3
ZPTVNYMJQHSSEA-UHFFFAOYSA-N 4-nitrotoluene Chemical compound CC1=CC=C([N+]([O-])=O)C=C1 ZPTVNYMJQHSSEA-UHFFFAOYSA-N 0.000 claims description 3
241000723346 Cinnamomum camphora Species 0.000 claims description 3
229960000846 camphor Drugs 0.000 claims description 3
229930008380 camphor Natural products 0.000 claims description 3
229910021641 deionized water Inorganic materials 0.000 abstract description 16
239000008367 deionised water Substances 0.000 abstract description 6
230000008030 elimination Effects 0.000 abstract description 4
238000003379 elimination reaction Methods 0.000 abstract description 4
KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 60
238000010586 diagram Methods 0.000 description 26
238000012360 testing method Methods 0.000 description 20
230000007246 mechanism Effects 0.000 description 17
230000000903 blocking effect Effects 0.000 description 16
239000007789 gas Substances 0.000 description 15
239000003960 organic solvent Substances 0.000 description 15
238000001035 drying Methods 0.000 description 14
239000010410 layer Substances 0.000 description 14
KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 13
239000012530 fluid Substances 0.000 description 11
229910052751 metal Inorganic materials 0.000 description 8
239000002184 metal Substances 0.000 description 8
239000003002 pH adjusting agent Substances 0.000 description 8
230000000052 comparative effect Effects 0.000 description 7
239000000203 mixture Substances 0.000 description 7
239000004065 semiconductor Substances 0.000 description 7
LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
239000002585 base Substances 0.000 description 5
230000004048 modification Effects 0.000 description 5
238000012986 modification Methods 0.000 description 5
QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
239000004020 conductor Substances 0.000 description 4
230000007423 decrease Effects 0.000 description 4
230000007547 defect Effects 0.000 description 4
239000006185 dispersion Substances 0.000 description 4
WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
239000002253 acid Substances 0.000 description 3
KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
239000000470 constituent Substances 0.000 description 3
239000002612 dispersion medium Substances 0.000 description 3
239000003814 drug Substances 0.000 description 3
230000000694 effects Effects 0.000 description 3
238000011068 loading method Methods 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
241000519995 Stachys sylvatica Species 0.000 description 2
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
230000002776 aggregation Effects 0.000 description 2
238000004220 aggregation Methods 0.000 description 2
229910021529 ammonia Inorganic materials 0.000 description 2
229910052799 carbon Inorganic materials 0.000 description 2
238000004140 cleaning Methods 0.000 description 2
238000011109 contamination Methods 0.000 description 2
229940079593 drug Drugs 0.000 description 2
229910017604 nitric acid Inorganic materials 0.000 description 2
239000002356 single layer Substances 0.000 description 2
239000007787 solid Substances 0.000 description 2
230000032258 transport Effects 0.000 description 2
229910052721 tungsten Inorganic materials 0.000 description 2
238000010977 unit operation Methods 0.000 description 2
DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
230000002378 acidificating effect Effects 0.000 description 1
230000009471 action Effects 0.000 description 1
239000003513 alkali Substances 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910000147 aluminium phosphate Inorganic materials 0.000 description 1
229910021417 amorphous silicon Inorganic materials 0.000 description 1
238000013459 approach Methods 0.000 description 1
229910052786 argon Inorganic materials 0.000 description 1
SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
238000009835 boiling Methods 0.000 description 1
239000006227 byproduct Substances 0.000 description 1
239000000919 ceramic Substances 0.000 description 1
239000003795 chemical substances by application Substances 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
238000004590 computer program Methods 0.000 description 1
238000010276 construction Methods 0.000 description 1
229910052802 copper Inorganic materials 0.000 description 1
239000010949 copper Substances 0.000 description 1
239000002270 dispersing agent Substances 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000006870 function Effects 0.000 description 1
DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
239000001257 hydrogen Substances 0.000 description 1
229910052739 hydrogen Inorganic materials 0.000 description 1
CABDFQZZWFMZOD-UHFFFAOYSA-N hydrogen peroxide;hydrochloride Chemical compound Cl.OO CABDFQZZWFMZOD-UHFFFAOYSA-N 0.000 description 1
XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
150000002576 ketones Chemical class 0.000 description 1
239000004973 liquid crystal related substance Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
239000002609 medium Substances 0.000 description 1
239000000178 monomer Substances 0.000 description 1
QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
229910052757 nitrogen Inorganic materials 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
150000007524 organic acids Chemical class 0.000 description 1
235000005985 organic acids Nutrition 0.000 description 1
150000007530 organic bases Chemical class 0.000 description 1
235000006408 oxalic acid Nutrition 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
239000003755 preservative agent Substances 0.000 description 1
230000002335 preservative effect Effects 0.000 description 1
230000001681 protective effect Effects 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000007790 solid phase Substances 0.000 description 1
238000003860 storage Methods 0.000 description 1
239000004094 surface-active agent Substances 0.000 description 1
229910052719 titanium Inorganic materials 0.000 description 1
239000010936 titanium Substances 0.000 description 1
WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
239000010937 tungsten Substances 0.000 description 1
238000009834 vaporization Methods 0.000 description 1
230000008016 vaporization Effects 0.000 description 1
238000005406 washing Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/04—Drying solid materials or objects by processes not involving the application of heat by evaporation or sublimation of moisture under reduced pressure, e.g. in a vacuum
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

Landscapes

Engineering & Computer Science (AREA)
Microelectronics & Electronic Packaging (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Physics & Mathematics (AREA)
Power Engineering (AREA)
Health & Medical Sciences (AREA)
Life Sciences & Earth Sciences (AREA)
Molecular Biology (AREA)
Mechanical Engineering (AREA)
General Engineering & Computer Science (AREA)
Cleaning Or Drying Semiconductors (AREA)
Manufacturing Of Printed Circuit Boards (AREA)

TW111128471A 2021-07-30 2022-07-29 基板處理方法及基板處理裝置 TWI813405B (zh)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
JP2021125894A JP2023020501A (ja)	2021-07-30	2021-07-30	基板処理方法及び基板処理装置
JP2021-125894		2021-07-30

Publications (2)

Publication Number	Publication Date
TW202313213A TW202313213A (zh)	2023-04-01
TWI813405B true TWI813405B (zh)	2023-08-21

Family

ID=85086821

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
TW111128471A TWI813405B (zh)	2021-07-30	2022-07-29	基板處理方法及基板處理裝置

Country Status (5)

Country	Link
JP (1)	JP2023020501A (ja)
KR (1)	KR20240033045A (ja)
CN (1)	CN117836907A (ja)
TW (1)	TWI813405B (ja)
WO (1)	WO2023008529A1 (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2017139279A (ja) *	2016-02-02	2017-08-10	株式会社東芝	基板乾燥装置、および基板処理システム
JP2017152600A (ja) *	2016-02-26	2017-08-31	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置および基板処理方法
JP2018139331A (ja) *	2018-06-13	2018-09-06	東京エレクトロン株式会社	基板乾燥方法及び基板処理装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP3402932B2 (ja)	1995-05-23	2003-05-06	東京エレクトロン株式会社	洗浄方法及びその装置
JP7001423B2 (ja) *	2016-12-26	2022-01-19	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置及び基板処理方法
JP7286359B2 (ja) *	2018-06-22	2023-06-05	株式会社Ｓｃｒｅｅｎホールディングス	基板処理方法、基板処理装置、および乾燥前処理液
JP7163248B2 (ja) *	2019-05-29	2022-10-31	株式会社Ｓｃｒｅｅｎホールディングス	昇華性物質含有液の製造方法、基板乾燥方法、および基板処理装置

2021
- 2021-07-30 JP JP2021125894A patent/JP2023020501A/ja active Pending
2022
- 2022-07-28 CN CN202280053263.1A patent/CN117836907A/zh active Pending
- 2022-07-28 KR KR1020247005174A patent/KR20240033045A/ko unknown
- 2022-07-28 WO PCT/JP2022/029135 patent/WO2023008529A1/ja active Application Filing
- 2022-07-29 TW TW111128471A patent/TWI813405B/zh active

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2017139279A (ja) *	2016-02-02	2017-08-10	株式会社東芝	基板乾燥装置、および基板処理システム
JP2017152600A (ja) *	2016-02-26	2017-08-31	株式会社Ｓｃｒｅｅｎホールディングス	基板処理装置および基板処理方法
JP2018139331A (ja) *	2018-06-13	2018-09-06	東京エレクトロン株式会社	基板乾燥方法及び基板処理装置

Also Published As

Publication number	Publication date
JP2023020501A (ja)	2023-02-09
TW202313213A (zh)	2023-04-01
WO2023008529A1 (ja)	2023-02-02
KR20240033045A (ko)	2024-03-12
CN117836907A (zh)	2024-04-05

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