WO2021117753A1 - 集光レンズの高さ調整方法およびチップ転写方法ならびに集光レンズの高さ調整装置およびチップ転写装置 - Google Patents

集光レンズの高さ調整方法およびチップ転写方法ならびに集光レンズの高さ調整装置およびチップ転写装置 Download PDF

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WO2021117753A1
WO2021117753A1 PCT/JP2020/045781 JP2020045781W WO2021117753A1 WO 2021117753 A1 WO2021117753 A1 WO 2021117753A1 JP 2020045781 W JP2020045781 W JP 2020045781W WO 2021117753 A1 WO2021117753 A1 WO 2021117753A1
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Prior art keywords
transfer
chip
transfer substrate
substrate
laser
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PCT/JP2020/045781
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English (en)
French (fr)
Japanese (ja)
Inventor
義人 水谷
新井　義之
Original Assignee
東レエンジニアリング株式会社
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Priority to CN202080085634.5A priority Critical patent/CN114788021A/zh
Priority to KR1020227023467A priority patent/KR20220114005A/ko
Priority to JP2021563992A priority patent/JP7486521B2/ja
Publication of WO2021117753A1 publication Critical patent/WO2021117753A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

Definitions

  • the present invention relates to an optical lens height adjusting method and a chip transfer method, and a condenser lens height adjusting device and a chip transfer device.
  • chip components that are densely formed on a wafer substrate and diced, or chip components that have been transferred to a transfer substrate in the state of being arranged on the wafer substrate, are re-transferred to a transfer destination substrate such as a wiring board at predetermined intervals.
  • a transfer destination substrate such as a wiring board
  • the individual chip components arranged at high density on the transfer substrate including the wafer substrate have a high error of about several ⁇ m in order to ensure electrical bonding between the electrodes of the chip components and the electrodes of the transfer destination substrate. It needs to be transferred with precision. Moreover, it is necessary to transfer a large number of chip parts at high speed.
  • FIG. 12 shows an example in which the chip component C is transferred and arranged from the transfer substrate 2 to the transfer destination substrate B by the LLO method. That is, the state in which the rightmost chip component C is irradiated with the laser beam L and transferred to the transfer destination substrate B is shown. Here, the rightmost chip component C is aligned with the upper portion of the transfer destination substrate B at a predetermined position.
  • the wavelength of the laser beam L is selected from a range suitable for the chip component C to peel off from the transfer substrate 2. For example, if a wavelength that is absorbed by the material of the chip component C while being transmitted through the transfer substrate 2 is used, the chip component C is peeled from the transfer substrate 2 by the gas generated by the decomposition of the material as the temperature rises.
  • FIG. 13 shows a state in which the rightmost chip component C peeled off from the transfer substrate 2 by irradiation with the laser beam L is transferred to the transfer destination substrate B.
  • the rightmost chip component C since the rightmost chip component C is transferred directly below, it is arranged at a predetermined position on the transfer destination substrate B. If the moving distance of the chip component directly under the chip component due to the transfer is set to be larger than the thickness of the chip component, the transfer substrate 2 can be moved in the horizontal direction even if the chip component C is transferred to the transfer destination substrate B. It is possible.
  • the intensity distribution of the laser beam on the processed surface which is the interface between the transfer substrate 2 and the chip component C. is important.
  • a specific example thereof is shown in a cross-sectional view in relation to the intensity distribution on the processed surface of the laser beam L and the transfer quality.
  • the intensity distribution D (top hat distribution) is the laser light L (on the machined surface) in which the chip component C is surely transferred to the transfer destination substrate B without receiving excessive energy while being peeled from the transfer substrate 2.
  • Intensity distribution although the intensity distribution A is a uniform intensity distribution, the intensity of the laser beam L on the machined surface is generally weak and the chip component C does not peel off.
  • the intensity distribution B (Gaussian distribution), even if sufficient intensity of the laser beam L is obtained in the central portion of the chip, the chip component C does not peel off at the peripheral portion of the chip component C, so that transfer failure occurs.
  • the laser beam L at the peripheral edge of the chip component C becomes excessive, so that the chip component C is peeled off from the transfer substrate 2, but the chip component There is a concern that the chip component C may be laterally displaced during transfer due to peeling from one corner, or that the corner portion C of the chip component may be damaged.
  • the laser light intensity distribution on the machined surface is adjusted by a method as illustrated in FIG. 15 (b). That is, the intensity distribution of the laser beam L at the height of the machined surface 2F shown in FIG. 15 (a) is the beam profiler 7 having the light receiving surface 7F at the same height H2F as the machined surface 2F (without the transfer substrate 2). The height position of the condenser lens 5 is determined so that the light intensity distribution on the light receiving surface 7F is optimized (as in the intensity distribution D in FIG. 14) while observing with. Then, the LLO method is performed at the height position of the condenser lens 5 adjusted in this way.
  • the present invention has been made in view of the above problems, and when the chip component is transferred to the transfer destination substrate by the laser lift-off method, the laser light intensity distribution on the processed surface which is the interface between the chip component and the transfer substrate is appropriate.
  • a method for adjusting the height of an optical lens and a method for transferring a chip and a device for adjusting the height of a condenser lens and a device for transferring a chip so that good transfer quality can be obtained.
  • the invention according to claim 1 is The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with a laser beam through the transfer substrate to peel off the chip components, and the chip is peeled off.
  • the surface of the machined surface is adjusted by adjusting the height of a condenser lens that is arranged between the laser light source and the transfer substrate and can move up and down. It is a method of adjusting the height of the condenser lens that optimizes the intensity distribution of the laser light inside.
  • a beam profiler having an upward light receiving surface and measuring the intensity distribution of the laser light is arranged under the transfer substrate, and the laser light is emitted at a position where the chip component is not arranged through the transfer substrate. This is a method for adjusting the height of a condenser lens by measuring the intensity distribution and adjusting the height of the condenser lens.
  • the invention according to claim 2 is the method for adjusting the height of the condenser lens according to claim 1. This is a method for adjusting the height of a condenser lens, in which the light receiving surface is brought into close contact with the lower surface of the transfer substrate.
  • the invention according to claim 3 is the method for adjusting the height of the condenser lens according to claim 1. This is a method for adjusting the height of a condenser lens in which the light receiving surface is below the lower surface of the transfer substrate.
  • the invention according to claim 4 is the method for adjusting the height of the condenser lens according to claim 3, when the refractive index of the transfer substrate is known.
  • This is a method for adjusting the height of a condenser lens, in which the intensity distribution of the laser on the lower surface of the transfer substrate is estimated from the intensity distribution of the laser on the light receiving surface according to the distance between the light receiving surface and the lower surface of the transfer substrate.
  • the invention according to claim 5 A chip transfer method in which the adhesive layer of a transfer substrate on which a plurality of chip components are arranged via an adhesive layer is irradiated with laser light through the transfer substrate to selectively transfer the chip components to a transfer destination substrate. And Pre-irradiation that irradiates a laser beam with an intensity distribution having a donut-shaped high intensity region so that the adhesive strength of the adhesive layer near the outer peripheral portion of the chip component is reduced, and the chip component and the chip component that have undergone the pre-irradiation step.
  • the adhesive layer between the transfer substrates is irradiated with a laser beam having an intensity distribution of a top hat distribution or a Gaussian distribution, and the chip component is peeled from the transfer substrate and transferred to the transfer destination substrate. This is a chip transfer method.
  • the invention according to claim 6 The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light through the transfer substrate to peel off the chip components, and the chip is peeled off.
  • a chip transfer device that transfers to the upper surface of a transfer destination substrate facing a component,
  • the height of the condenser lens which is arranged between the laser light source and the transfer substrate and adjusts the height of the condenser lens that can move up and down to optimize the intensity distribution of the laser light in the plane of the machined surface.
  • a condensing lens driving unit that drives the condensing lens up and down, a beam profiler for measuring the intensity distribution of laser light, which is arranged so as to have an upward light receiving surface below the lower surface of the transfer substrate, and the condensing. It has a lens drive unit and a control unit connected to the beam profiler. There is a condenser lens height adjusting device having a function of the control unit acquiring the intensity distribution of the laser on the light receiving surface while changing the height position of the condenser lens.
  • the invention according to claim 7 The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light from above through the transfer substrate to peel off the chip components.
  • a chip transfer device that transfers to the upper surface of a transfer destination substrate facing the chip component.
  • a chip transfer transfer device including the height adjusting device for a condenser lens according to claim 6.
  • the invention according to claim 8 is A chip transfer device that selectively transfers the chip components to the transfer destination substrate by irradiating the adhesive layer of the transfer substrate on which a plurality of chip components are arranged via the adhesive layer with laser light through the transfer substrate. And Between a laser oscillator having a wavelength capable of causing laser ablation in the adhesive layer, a condensing means arranged between the laser oscillator and the transfer substrate and condensing laser light, and the condensing means of the laser oscillator.
  • the state of the beam shaper can be changed, and the intensity distribution of the laser beam irradiating the adhesive layer can be switched between a ring-shaped high-intensity region shape and a Gaussian shape or a top hat shape. It is a chip transfer device that can be used.
  • the transfer substrate of the present invention when the chip component is transferred to the transfer destination substrate by the laser lift-off method, the laser light intensity distribution on the processed surface, which is the interface between the chip component and the transfer substrate, is optimized and good transfer is performed. Quality is obtained.
  • the pre-irradiation of the laser beam in the modified example of the embodiment of the present invention will be described, (a) a diagram showing the process of irradiating the laser beam, and (b) adhesion in the vicinity of the outer peripheral portion of the chip component by the pre-irradiation. It is a figure which shows the change of a layer.
  • the main irradiation of the laser beam in the modified example of the embodiment of the present invention will be described, (a) a diagram showing a process of irradiating the laser beam, and (b) a chip component peeled from the transfer substrate is a transfer destination. It is a figure which shows the state transferred to the substrate.
  • the preliminary irradiation of the laser beam in the modified example of the embodiment of the present invention will be described in relation to the in-plane shape of the chip, (a) a diagram showing the chip component arrangement on the transfer substrate surface, and (b) a preliminary It is a figure which exemplifies the laser light intensity distribution of irradiation, (c) is a figure which exemplifies the state of the adhesive layer after pre-irradiation and the laser light intensity distribution in the chip component which performs pre-irradiation, and (d) reserve It is a figure which illustrates the state which scans an irradiation position and sequentially performs to a chip component on a transfer substrate.
  • the main irradiation of the laser beam in the modified example of the embodiment of the present invention will be described in relation to the in-plane shape of the chip, and (a) is a diagram illustrating the state of the adhesive layer after the pre-irradiation.
  • (B) It is a figure which shows the laser light intensity distribution of the main irradiation performed on the chip component which has been pre-irradiated
  • (c) is a figure which illustrates the state which the chip component was peeled off from a transfer substrate by the main irradiation
  • (d) sequentially It is a figure which shows the state which scans the main irradiation position.
  • the beam shape of the laser is square, (a) a diagram showing the laser light intensity distribution of the pre-irradiation, and (b) the main irradiation performed on the pre-irradiated chip component.
  • FIG. 1 is a diagram showing a configuration of a laser lift-off device 1 which is a chip transfer device according to an embodiment of the present invention.
  • the laser lift-off device 1 transfers the chip component C densely arranged on the transfer substrate 2 to a predetermined position on the transfer destination substrate B.
  • the transfer substrate 2 has a configuration in which the adhesive layer 21 is laminated on the base 20, but the present invention is not limited to this, and a wafer substrate (without the adhesive layer 21) may be used.
  • the laser lift-off device 1 includes a stage 3, a laser light source 4, a condenser lens 5, a condenser lens driving unit 51, a transfer substrate holding means 6, a beam profiler 7, and a control unit 8. Further, in the laser lift-off device 1, the condenser lens driving unit 51, the beam profiler 7, and the control unit 8 constitute a condenser lens height adjusting device.
  • the stage 3 has a function of holding the transfer destination substrate B and has a function of moving the transfer substrate B in the in-plane direction.
  • the laser light source 4 is a light source for irradiating the processed surface which is the lower surface 2F of the transfer substrate 2 and the interface with the chip component C with the wavelength and energy required for laser lift-off, and is not limited to the laser oscillator.
  • a laser light source 4 also includes an optical system that guides light emitted from a laser oscillator.
  • the condenser lens 5 collects the laser light L emitted from the laser light source 4, and the height position with respect to the transfer substrate 2 can be adjusted by the vertical movement by the condenser lens driving unit 51.
  • the laser light intensity distribution on the lower surface 2F of the transfer substrate changes.
  • the transfer board holding means 6 holds the peripheral portion of the transfer board 2 by gripping it, and it is desirable that the transfer board holding means 6 holds a function of moving the transfer board 2 in the in-plane direction and aligning the transfer board 2. Further, it may have a function of adjusting the height of the transfer substrate 2 in the vertical direction.
  • the beam profiler 7 receives laser light or the like and observes the in-plane distribution of light intensity on the light receiving surface 7F.
  • the light receiving surface 7F faces upward facing the laser beam L. It may have a function of adjusting the height of the light receiving surface 7F.
  • the control unit 8 is connected to the condenser lens drive unit 51 and the beam profiler 7.
  • the control unit 8 has a function of connecting to the condenser lens driving unit 51 to control the height of the condenser lens 5. Further, the control unit 8 can be connected to the beam profiler 7 to acquire the light intensity distribution as a two-dimensional image at an arbitrary timing. Further, it is desirable that the control unit 8 has a built-in storage means and a calculation means, and has a function of associating the height information of the condenser lens 5 with the light intensity distribution two-dimensional image acquired by the beam profiler 7.
  • the position where the chip component C is not arranged on the transfer substrate 2 is arranged directly under the condenser lens 5, and the light receiving surface 7F of the beam profiler 7 is provided at the same height as the lower surface 2F of the transfer substrate. It shows the state of the lens. If the laser beam L is irradiated in this state, the beam profiler 7 can observe the in-plane distribution of the laser beam intensity on the lower surface 2F of the transfer substrate. That is, it is possible to obtain an image equivalent to the in-plane distribution of the laser light intensity on the machined surface (at the place where the chip component C is arranged).
  • the control unit 8 observes the in-plane distribution of the laser light intensity with the beam profiler 7 while changing the height position of the condenser lens 5 with the condenser lens drive unit 51, so that an appropriate intensity distribution can be obtained. You can know the height of the lens 5. Here, whether or not the intensity distribution is appropriate may be determined by a person observing the image of the beam profiler 7, or may be automatically determined by the control unit 8 by an image analysis program.
  • FIG. 2B differs from FIG. 2A in the height of the light receiving surface 7F of the beam profiler 7, and the light receiving surface 7F is below the lower surface 2F of the transfer substrate. That is, the lower surface 2F of the transfer substrate and the light receiving surface 7F are not in close contact with each other.
  • the in-plane distribution of the laser light intensity obtained by the beam profiler 7 is, of course, not that of the lower surface 2F of the transfer substrate.
  • the refractive index of the transfer substrate 2 is known, even if the light receiving surface 7F is separated from the transfer substrate lower surface 2F, depending on the height of the light receiving surface 7F (distance between the transfer substrate 2F and the light receiving surface 7F), the light receiving surface It was found that the in-plane distribution of the laser light intensity on the lower surface of the transfer substrate 2F can be estimated from the in-plane distribution of the laser light intensity on the 7th floor. An example of this is shown in FIG. In FIG.
  • the distance between the lower surface 2F of the transfer substrate and the light receiving surface 7F is set to a predetermined value, and when the laser light intensity distribution of the lower surface 2F of the transfer board is the beam profile A, the laser light intensity distribution of the light receiving surface 7F is An example of the beam profile B is shown. That is, in the example shown in FIG. 3, the height of the condenser lens 5 is adjusted so that the laser light intensity of the light receiving surface 7F is as shown in the intensity distribution B (Gaussian distribution) shown in FIG. Good transfer quality can be obtained by the LLO method (the laser light intensity distribution on the lower surface 2F of the transfer substrate becomes the top hat distribution).
  • the relationship between the laser light intensity distribution on the light receiving surface 7F and the laser light intensity distribution on the transfer substrate lower surface 2F is set to the distance between the transfer substrate lower surface 2F and the light receiving surface 7F. It is desirable to create a database accordingly and record it in the control unit 8. By creating a database, the control unit 8 observes the in-plane distribution of the laser light intensity of the light receiving surface 7F with the beam profiler 7 while changing the height position of the condensing lens 5 with the condensing lens driving unit 51. It is possible to know the height of the condenser lens 5 from which an appropriate intensity distribution can be obtained on the lower surface 2F of the transfer substrate.
  • the database creation is not limited to the relationship between the laser light intensity distribution on the light receiving surface 7F and the laser light intensity distribution on the lower surface 2F of the transfer substrate. That is, the relationship between the laser light intensity distribution of the actual light receiving surface 7F and the transfer state confirmed by performing the LLO method may be stored in a database according to the distance between the lower surface 2F of the transfer substrate and the light receiving surface 7F.
  • the laser light on the lower surface 2F of the transfer substrate has an intensity suitable for the LLO method within a range corresponding to the chip size of the chip component C, and good transfer is performed as shown in FIG. 4 (b). You can.
  • the chip component C when irradiating the taser light having an intensity distribution suitable for the chip size of the chip component C as shown in FIG. 4A, it is necessary to align the laser light irradiation position with respect to the chip component C to be transferred with high accuracy. .. That is, when the optical axis LC of the laser beam L is deviated from the center CC of the chip component C as shown in FIG. 5A, the chip component is in a state where the portion having weak laser light intensity (the right side of the chip in the figure) is not peeled off. Since peeling occurs from the left side of C, the chip component C cannot be transferred in parallel with the transfer destination substrate B.
  • the laser irradiation range of the intensity distribution D (top hat distribution) in FIG. 14 is widened, it is possible to irradiate the entire surface of each chip component C with laser light of appropriate intensity. It becomes.
  • the laser irradiation range in this way it is necessary to output the laser light source 4 at a high output, which leads to an increase in size and cost of the apparatus.
  • the chip component C adjacent to the chip component C to be transferred may be partially peeled off, which is not preferable.
  • FIG. 6 is a diagram showing a schematic configuration of a laser lift-off device 101, which is a chip transfer device in a modified example of the embodiment of the present invention.
  • the laser lift-off device 101 transfers the chip component C, which is densely arranged on the transfer substrate 2, to a predetermined position on the transfer destination substrate B.
  • the transfer substrate 2 has an adhesive layer 21 laminated on the base 20.
  • the laser lift-off device 101 includes a stage 3, a laser light source 4, a condenser lens 5, a condenser lens driving unit 51, a transfer substrate holding means 6, and a control unit 8.
  • the stage 3 has a function of holding the transfer destination substrate B and has a function of moving the transfer substrate B in the in-plane direction.
  • the laser light source 4 is a light source for irradiating a wavelength and energy such that the adhesive layer 21 is absorbed by the adhesive layer 21 of the transfer substrate 2 and the adhesive layer 21 is cured (decreased in adhesive strength) or decomposed to generate gas.
  • the laser light source 4 is not limited to the laser oscillator, but also includes an optical system that guides the light emitted from the laser oscillator. Further, the laser light source 4 may have a function of a beam shaper. That is, a beam shaper having a variable laser beam profile (in-plane intensity distribution) may be arranged between the laser oscillator and an optical system having a scanning function such as galvano.
  • the condensing hand lens condenses the laser light L emitted from the laser light source 4, and if it causes spherical aberration, the adhesive layer is adjusted by adjusting the height of the condensing lens driving unit 51 with respect to the adhesive layer 21.
  • the laser light intensity distribution within the 21 plane can be changed.
  • the transfer board holding means 6 holds the peripheral portion of the transfer board 2 by gripping it, and it is desirable that the transfer board holding means 6 holds a function of moving the transfer board 2 in the in-plane direction and aligning the transfer board 2. Further, it may have a function of adjusting the height of the transfer substrate 2 in the vertical direction.
  • the control unit 8 is connected to the stage 3, the laser light source 4, the transfer board 6, and the condenser lens drive unit 51.
  • the control unit 8 is connected to the stage 3 and controls the position of the stage 3 so that the chip component C can be transferred to a predetermined position on the transfer destination substrate B.
  • the control unit 8 can control the irradiation timing of the laser light L by the laser light source 4. Further, when the laser light source 4 includes an optical system such as a galvano, it is possible to control scanning of the laser beam L in the in-plane direction of the transfer substrate 2.
  • the control unit 8 can be connected to the transfer board holding means 6 to control the in-plane position of the transfer board 2.
  • the control unit 8 has a function of connecting to the condenser lens driving unit 51 to control the state of the condenser lens 5. With this function, it is possible to change the intensity distribution of the laser beam applied to the adhesive layer 21 of the transfer substrate 2. Therefore, as shown in the upper left of FIG. 6, the intensity distribution of the laser beam applied to the adhesive layer 21 becomes high in the vicinity of the outer peripheral portion with respect to the size CW of the chip component C (as a profile). It is also possible to switch between a donut-like high-intensity region) distribution and a top hat distribution that becomes stronger near the center.
  • the switching of the intensity distribution of the laser beam applied to the adhesive layer 21 is not limited to this, and for example, a Gaussian distribution may be applied instead of the top hat distribution.
  • FIG. 7 shows a laser lift-off device 1, which does not peel off the chip component C from the transfer substrate 2, but reduces the adhesive force of the adhesive layer 21 (or peels off the adhesive layer 21) in the vicinity of the outer peripheral portion of the chip component C.
  • the pre-irradiation step of irradiating light will be described.
  • the laser light source 4 has a beam shaper function. If it is, it is possible to change the state of the beam shaper and perform the same switching.
  • the intensity distribution of the laser beam irradiating the adhesive layer 21 of the transfer substrate 2 is higher in the vicinity of the outer peripheral portion and weaker in the central portion with respect to the size CW of the chip component C.
  • the adhesive strength of the adhesive layer 21 is maintained near the center of the chip component C, but in the vicinity of the outer peripheral portion, as shown in FIG. 7B, the low adhesive portion 21V It becomes.
  • the low adhesive portion 21V includes not only a reduced adhesive force but also a state of being peeled off from the chip component C or the base 20.
  • the adhesive force of the adhesive layer 21 is high near the center of the chip component C, so that the chip component C is maintained in the state of being arranged on the transfer substrate 2.
  • the chip component C is in a state of being easily peeled off in the vicinity of the outer peripheral portion.
  • the chip component C can be easily peeled from the transfer substrate 2. Then, it is transferred to the transfer destination substrate B while maintaining the parallel state (FIG. 8 (b)).
  • the chip component C can be transferred to the transfer destination substrate B even if the intensity of the laser light is not the top hat distribution but the Gaussian distribution.
  • the adhesive force of the adhesive layer 21 is weak in the vicinity of the outer peripheral portion of the chip component C due to the preliminary irradiation, even if the optical axis of the laser beam is slightly deviated from the center of the chip component C in the main irradiation, the chip component C Can be transferred to the transfer destination substrate B while maintaining parallelism.
  • the chip components arranged on the transfer substrate via the adhesive layer are transferred to the transfer destination substrate.
  • the laser beam can be scanned (in the in-plane direction of the transfer substrate 2) by an optical system such as galvano, pre-irradiation is performed at the positions of all the chip components C arranged on the transfer substrate 2, and then the pre-irradiation is performed. It is preferable to transfer the chip component C to the transfer destination substrate B by the main irradiation at the position of each chip component.
  • FIGS. 9 and 10 Examples of this are shown in FIGS. 9 and 10, which will be described using the in-plane arrangement of the chip component C on the transfer substrate 2.
  • FIG. 9A shows a chip component C arranged on the transfer substrate 2 via an adhesive 21, and shows a state in which pre-irradiation is performed centering on the chip component C on the upper right of this arrangement. Is shown in FIG. 9 (b).
  • FIG. 9B the region of high in-plane intensity of the pre-irradiation is shown in the pre-irradiation portion LP21P, and the low-adhesion portion 21V is generated in the vicinity of the outer peripheral portion of the chip component C by the pre-irradiation (FIG. 9 (c)). ).
  • FIG. 9A shows a chip component C arranged on the transfer substrate 2 via an adhesive 21, and shows a state in which pre-irradiation is performed centering on the chip component C on the upper right of this arrangement. Is shown in FIG. 9 (b).
  • FIG. 9B the region of high in-plane intensity of the pre-irradiation is shown in the pre-irradiation portion LP21P, and the low-adhe
  • 9C shows that the low-adhesive portion is formed by the pre-irradiation, and shows the state in which the pre-irradiation is performed centering on the adjacent chip component C. That is, instead of directly irradiating the chip component C in which the low adhesive portion 21V is generated by the pre-irradiation, the transfer substrate 2 is sequentially pre-irradiated according to the arrangement of the chip component C (FIG. 9 (FIG. 9). d)).
  • FIG. 10A illustrates a state in which pre-irradiation according to the arrangement position of the chip component C to be transferred (excluding defective products) of the transfer substrate B is completed in this way.
  • a low adhesive portion 21V is formed on the adhesive layer 21 in the vicinity of the outer peripheral portion of the chip component C according to the individual arrangement positions of the chip components C arranged on the transfer substrate 2.
  • each chip component C is in a state of being attached to the transfer substrate 2 by the adhesive layer 21 that maintains the adhesive strength near the center, but the adhesive layer 21 near the outer peripheral portion is low due to pre-irradiation.
  • the adhesive portion is 21V.
  • the chip component C can be peeled off even if the light intensity near the outer peripheral portion of the chip component C is low. That is, by providing the main irradiation portion LP21L having a high light intensity near the center of the chip component C as shown in FIG. 10 (b), the low adhesive portion 21V is also provided near the center of the chip component C as shown in FIG. 10 (c). , The chip component C is peeled off and transferred to the transfer destination substrate B. After that, the chip component C (adhesive layer 21) arranged on the transfer substrate 2 is subjected to the main irradiation as shown in FIG. 10D, and the chip component C is sequentially transferred to a predetermined position on the transfer destination substrate B.
  • the shape of the laser beam irradiation surface is round in FIGS. 9 and 10, but the shape is not limited to this. If the beam shaper has a function of changing the shape of the irradiation surface, it can be made into a quadrangular shape or the like matching the chip shape as shown in FIG.
  • the laser optical system is provided with a beam shaper. In some cases, it is possible to optimize the laser light intensity distribution on the machined surface by using the function of the beam shaper.
  • Laser lift-off device (chip transfer device) 2 Transfer board 2F Transfer board lower surface (processed surface) 3 Stage 4 Laser light source 5 Condensing lens 6 Transfer substrate holding means 7 Beam profiler 7F Light receiving surface 8 Control unit 20 Base 21 Adhesive layer 51 Condensing lens drive unit B Transfer destination substrate C Chip parts CW chip size H2F Transfer substrate bottom surface height L Laser light

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PCT/JP2020/045781 2019-12-12 2020-12-09 集光レンズの高さ調整方法およびチップ転写方法ならびに集光レンズの高さ調整装置およびチップ転写装置 WO2021117753A1 (ja)

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KR1020227023467A KR20220114005A (ko) 2019-12-12 2020-12-09 집광 렌즈의 높이 조정 방법 및 칩 전사 방법 그리고 집광 렌즈의 높이 조정 장치 및 칩 전사 장치
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WO2023190595A1 (ja) * 2022-03-30 2023-10-05 東レエンジニアリング株式会社 転写方法、及び転写装置

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