WO2021117753A1 - Collection lens height adjusting method, chip transfer method, collection lens height adjusting device, and chip transfer device - Google Patents

Collection lens height adjusting method, chip transfer method, collection lens height adjusting device, and chip transfer device Download PDF

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Publication number
WO2021117753A1
WO2021117753A1 PCT/JP2020/045781 JP2020045781W WO2021117753A1 WO 2021117753 A1 WO2021117753 A1 WO 2021117753A1 JP 2020045781 W JP2020045781 W JP 2020045781W WO 2021117753 A1 WO2021117753 A1 WO 2021117753A1
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Prior art keywords
transfer
chip
transfer substrate
substrate
laser
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PCT/JP2020/045781
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French (fr)
Japanese (ja)
Inventor
義人 水谷
新井　義之
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東レエンジニアリング株式会社
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Application filed by 東レエンジニアリング株式会社 filed Critical 東レエンジニアリング株式会社
Priority to CN202080085634.5A priority Critical patent/CN114788021A/en
Priority to KR1020227023467A priority patent/KR20220114005A/en
Priority to JP2021563992A priority patent/JP7486521B2/en
Publication of WO2021117753A1 publication Critical patent/WO2021117753A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/50—Working by transmitting the laser beam through or within the workpiece
    • B23K26/57—Working by transmitting the laser beam through or within the workpiece the laser beam entering a face of the workpiece from which it is transmitted through the workpiece material to work on a different workpiece face, e.g. for effecting removal, fusion splicing, modifying or reforming
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
    • B23K26/354—Working by laser beam, e.g. welding, cutting or boring for surface treatment by melting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range

Definitions

  • the present invention relates to an optical lens height adjusting method and a chip transfer method, and a condenser lens height adjusting device and a chip transfer device.
  • chip components that are densely formed on a wafer substrate and diced, or chip components that have been transferred to a transfer substrate in the state of being arranged on the wafer substrate, are re-transferred to a transfer destination substrate such as a wiring board at predetermined intervals.
  • a transfer destination substrate such as a wiring board
  • the individual chip components arranged at high density on the transfer substrate including the wafer substrate have a high error of about several ⁇ m in order to ensure electrical bonding between the electrodes of the chip components and the electrodes of the transfer destination substrate. It needs to be transferred with precision. Moreover, it is necessary to transfer a large number of chip parts at high speed.
  • FIG. 12 shows an example in which the chip component C is transferred and arranged from the transfer substrate 2 to the transfer destination substrate B by the LLO method. That is, the state in which the rightmost chip component C is irradiated with the laser beam L and transferred to the transfer destination substrate B is shown. Here, the rightmost chip component C is aligned with the upper portion of the transfer destination substrate B at a predetermined position.
  • the wavelength of the laser beam L is selected from a range suitable for the chip component C to peel off from the transfer substrate 2. For example, if a wavelength that is absorbed by the material of the chip component C while being transmitted through the transfer substrate 2 is used, the chip component C is peeled from the transfer substrate 2 by the gas generated by the decomposition of the material as the temperature rises.
  • FIG. 13 shows a state in which the rightmost chip component C peeled off from the transfer substrate 2 by irradiation with the laser beam L is transferred to the transfer destination substrate B.
  • the rightmost chip component C since the rightmost chip component C is transferred directly below, it is arranged at a predetermined position on the transfer destination substrate B. If the moving distance of the chip component directly under the chip component due to the transfer is set to be larger than the thickness of the chip component, the transfer substrate 2 can be moved in the horizontal direction even if the chip component C is transferred to the transfer destination substrate B. It is possible.
  • the intensity distribution of the laser beam on the processed surface which is the interface between the transfer substrate 2 and the chip component C. is important.
  • a specific example thereof is shown in a cross-sectional view in relation to the intensity distribution on the processed surface of the laser beam L and the transfer quality.
  • the intensity distribution D (top hat distribution) is the laser light L (on the machined surface) in which the chip component C is surely transferred to the transfer destination substrate B without receiving excessive energy while being peeled from the transfer substrate 2.
  • Intensity distribution although the intensity distribution A is a uniform intensity distribution, the intensity of the laser beam L on the machined surface is generally weak and the chip component C does not peel off.
  • the intensity distribution B (Gaussian distribution), even if sufficient intensity of the laser beam L is obtained in the central portion of the chip, the chip component C does not peel off at the peripheral portion of the chip component C, so that transfer failure occurs.
  • the laser beam L at the peripheral edge of the chip component C becomes excessive, so that the chip component C is peeled off from the transfer substrate 2, but the chip component There is a concern that the chip component C may be laterally displaced during transfer due to peeling from one corner, or that the corner portion C of the chip component may be damaged.
  • the laser light intensity distribution on the machined surface is adjusted by a method as illustrated in FIG. 15 (b). That is, the intensity distribution of the laser beam L at the height of the machined surface 2F shown in FIG. 15 (a) is the beam profiler 7 having the light receiving surface 7F at the same height H2F as the machined surface 2F (without the transfer substrate 2). The height position of the condenser lens 5 is determined so that the light intensity distribution on the light receiving surface 7F is optimized (as in the intensity distribution D in FIG. 14) while observing with. Then, the LLO method is performed at the height position of the condenser lens 5 adjusted in this way.
  • the present invention has been made in view of the above problems, and when the chip component is transferred to the transfer destination substrate by the laser lift-off method, the laser light intensity distribution on the processed surface which is the interface between the chip component and the transfer substrate is appropriate.
  • a method for adjusting the height of an optical lens and a method for transferring a chip and a device for adjusting the height of a condenser lens and a device for transferring a chip so that good transfer quality can be obtained.
  • the invention according to claim 1 is The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with a laser beam through the transfer substrate to peel off the chip components, and the chip is peeled off.
  • the surface of the machined surface is adjusted by adjusting the height of a condenser lens that is arranged between the laser light source and the transfer substrate and can move up and down. It is a method of adjusting the height of the condenser lens that optimizes the intensity distribution of the laser light inside.
  • a beam profiler having an upward light receiving surface and measuring the intensity distribution of the laser light is arranged under the transfer substrate, and the laser light is emitted at a position where the chip component is not arranged through the transfer substrate. This is a method for adjusting the height of a condenser lens by measuring the intensity distribution and adjusting the height of the condenser lens.
  • the invention according to claim 2 is the method for adjusting the height of the condenser lens according to claim 1. This is a method for adjusting the height of a condenser lens, in which the light receiving surface is brought into close contact with the lower surface of the transfer substrate.
  • the invention according to claim 3 is the method for adjusting the height of the condenser lens according to claim 1. This is a method for adjusting the height of a condenser lens in which the light receiving surface is below the lower surface of the transfer substrate.
  • the invention according to claim 4 is the method for adjusting the height of the condenser lens according to claim 3, when the refractive index of the transfer substrate is known.
  • This is a method for adjusting the height of a condenser lens, in which the intensity distribution of the laser on the lower surface of the transfer substrate is estimated from the intensity distribution of the laser on the light receiving surface according to the distance between the light receiving surface and the lower surface of the transfer substrate.
  • the invention according to claim 5 A chip transfer method in which the adhesive layer of a transfer substrate on which a plurality of chip components are arranged via an adhesive layer is irradiated with laser light through the transfer substrate to selectively transfer the chip components to a transfer destination substrate. And Pre-irradiation that irradiates a laser beam with an intensity distribution having a donut-shaped high intensity region so that the adhesive strength of the adhesive layer near the outer peripheral portion of the chip component is reduced, and the chip component and the chip component that have undergone the pre-irradiation step.
  • the adhesive layer between the transfer substrates is irradiated with a laser beam having an intensity distribution of a top hat distribution or a Gaussian distribution, and the chip component is peeled from the transfer substrate and transferred to the transfer destination substrate. This is a chip transfer method.
  • the invention according to claim 6 The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light through the transfer substrate to peel off the chip components, and the chip is peeled off.
  • a chip transfer device that transfers to the upper surface of a transfer destination substrate facing a component,
  • the height of the condenser lens which is arranged between the laser light source and the transfer substrate and adjusts the height of the condenser lens that can move up and down to optimize the intensity distribution of the laser light in the plane of the machined surface.
  • a condensing lens driving unit that drives the condensing lens up and down, a beam profiler for measuring the intensity distribution of laser light, which is arranged so as to have an upward light receiving surface below the lower surface of the transfer substrate, and the condensing. It has a lens drive unit and a control unit connected to the beam profiler. There is a condenser lens height adjusting device having a function of the control unit acquiring the intensity distribution of the laser on the light receiving surface while changing the height position of the condenser lens.
  • the invention according to claim 7 The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light from above through the transfer substrate to peel off the chip components.
  • a chip transfer device that transfers to the upper surface of a transfer destination substrate facing the chip component.
  • a chip transfer transfer device including the height adjusting device for a condenser lens according to claim 6.
  • the invention according to claim 8 is A chip transfer device that selectively transfers the chip components to the transfer destination substrate by irradiating the adhesive layer of the transfer substrate on which a plurality of chip components are arranged via the adhesive layer with laser light through the transfer substrate. And Between a laser oscillator having a wavelength capable of causing laser ablation in the adhesive layer, a condensing means arranged between the laser oscillator and the transfer substrate and condensing laser light, and the condensing means of the laser oscillator.
  • the state of the beam shaper can be changed, and the intensity distribution of the laser beam irradiating the adhesive layer can be switched between a ring-shaped high-intensity region shape and a Gaussian shape or a top hat shape. It is a chip transfer device that can be used.
  • the transfer substrate of the present invention when the chip component is transferred to the transfer destination substrate by the laser lift-off method, the laser light intensity distribution on the processed surface, which is the interface between the chip component and the transfer substrate, is optimized and good transfer is performed. Quality is obtained.
  • the pre-irradiation of the laser beam in the modified example of the embodiment of the present invention will be described, (a) a diagram showing the process of irradiating the laser beam, and (b) adhesion in the vicinity of the outer peripheral portion of the chip component by the pre-irradiation. It is a figure which shows the change of a layer.
  • the main irradiation of the laser beam in the modified example of the embodiment of the present invention will be described, (a) a diagram showing a process of irradiating the laser beam, and (b) a chip component peeled from the transfer substrate is a transfer destination. It is a figure which shows the state transferred to the substrate.
  • the preliminary irradiation of the laser beam in the modified example of the embodiment of the present invention will be described in relation to the in-plane shape of the chip, (a) a diagram showing the chip component arrangement on the transfer substrate surface, and (b) a preliminary It is a figure which exemplifies the laser light intensity distribution of irradiation, (c) is a figure which exemplifies the state of the adhesive layer after pre-irradiation and the laser light intensity distribution in the chip component which performs pre-irradiation, and (d) reserve It is a figure which illustrates the state which scans an irradiation position and sequentially performs to a chip component on a transfer substrate.
  • the main irradiation of the laser beam in the modified example of the embodiment of the present invention will be described in relation to the in-plane shape of the chip, and (a) is a diagram illustrating the state of the adhesive layer after the pre-irradiation.
  • (B) It is a figure which shows the laser light intensity distribution of the main irradiation performed on the chip component which has been pre-irradiated
  • (c) is a figure which illustrates the state which the chip component was peeled off from a transfer substrate by the main irradiation
  • (d) sequentially It is a figure which shows the state which scans the main irradiation position.
  • the beam shape of the laser is square, (a) a diagram showing the laser light intensity distribution of the pre-irradiation, and (b) the main irradiation performed on the pre-irradiated chip component.
  • FIG. 1 is a diagram showing a configuration of a laser lift-off device 1 which is a chip transfer device according to an embodiment of the present invention.
  • the laser lift-off device 1 transfers the chip component C densely arranged on the transfer substrate 2 to a predetermined position on the transfer destination substrate B.
  • the transfer substrate 2 has a configuration in which the adhesive layer 21 is laminated on the base 20, but the present invention is not limited to this, and a wafer substrate (without the adhesive layer 21) may be used.
  • the laser lift-off device 1 includes a stage 3, a laser light source 4, a condenser lens 5, a condenser lens driving unit 51, a transfer substrate holding means 6, a beam profiler 7, and a control unit 8. Further, in the laser lift-off device 1, the condenser lens driving unit 51, the beam profiler 7, and the control unit 8 constitute a condenser lens height adjusting device.
  • the stage 3 has a function of holding the transfer destination substrate B and has a function of moving the transfer substrate B in the in-plane direction.
  • the laser light source 4 is a light source for irradiating the processed surface which is the lower surface 2F of the transfer substrate 2 and the interface with the chip component C with the wavelength and energy required for laser lift-off, and is not limited to the laser oscillator.
  • a laser light source 4 also includes an optical system that guides light emitted from a laser oscillator.
  • the condenser lens 5 collects the laser light L emitted from the laser light source 4, and the height position with respect to the transfer substrate 2 can be adjusted by the vertical movement by the condenser lens driving unit 51.
  • the laser light intensity distribution on the lower surface 2F of the transfer substrate changes.
  • the transfer board holding means 6 holds the peripheral portion of the transfer board 2 by gripping it, and it is desirable that the transfer board holding means 6 holds a function of moving the transfer board 2 in the in-plane direction and aligning the transfer board 2. Further, it may have a function of adjusting the height of the transfer substrate 2 in the vertical direction.
  • the beam profiler 7 receives laser light or the like and observes the in-plane distribution of light intensity on the light receiving surface 7F.
  • the light receiving surface 7F faces upward facing the laser beam L. It may have a function of adjusting the height of the light receiving surface 7F.
  • the control unit 8 is connected to the condenser lens drive unit 51 and the beam profiler 7.
  • the control unit 8 has a function of connecting to the condenser lens driving unit 51 to control the height of the condenser lens 5. Further, the control unit 8 can be connected to the beam profiler 7 to acquire the light intensity distribution as a two-dimensional image at an arbitrary timing. Further, it is desirable that the control unit 8 has a built-in storage means and a calculation means, and has a function of associating the height information of the condenser lens 5 with the light intensity distribution two-dimensional image acquired by the beam profiler 7.
  • the position where the chip component C is not arranged on the transfer substrate 2 is arranged directly under the condenser lens 5, and the light receiving surface 7F of the beam profiler 7 is provided at the same height as the lower surface 2F of the transfer substrate. It shows the state of the lens. If the laser beam L is irradiated in this state, the beam profiler 7 can observe the in-plane distribution of the laser beam intensity on the lower surface 2F of the transfer substrate. That is, it is possible to obtain an image equivalent to the in-plane distribution of the laser light intensity on the machined surface (at the place where the chip component C is arranged).
  • the control unit 8 observes the in-plane distribution of the laser light intensity with the beam profiler 7 while changing the height position of the condenser lens 5 with the condenser lens drive unit 51, so that an appropriate intensity distribution can be obtained. You can know the height of the lens 5. Here, whether or not the intensity distribution is appropriate may be determined by a person observing the image of the beam profiler 7, or may be automatically determined by the control unit 8 by an image analysis program.
  • FIG. 2B differs from FIG. 2A in the height of the light receiving surface 7F of the beam profiler 7, and the light receiving surface 7F is below the lower surface 2F of the transfer substrate. That is, the lower surface 2F of the transfer substrate and the light receiving surface 7F are not in close contact with each other.
  • the in-plane distribution of the laser light intensity obtained by the beam profiler 7 is, of course, not that of the lower surface 2F of the transfer substrate.
  • the refractive index of the transfer substrate 2 is known, even if the light receiving surface 7F is separated from the transfer substrate lower surface 2F, depending on the height of the light receiving surface 7F (distance between the transfer substrate 2F and the light receiving surface 7F), the light receiving surface It was found that the in-plane distribution of the laser light intensity on the lower surface of the transfer substrate 2F can be estimated from the in-plane distribution of the laser light intensity on the 7th floor. An example of this is shown in FIG. In FIG.
  • the distance between the lower surface 2F of the transfer substrate and the light receiving surface 7F is set to a predetermined value, and when the laser light intensity distribution of the lower surface 2F of the transfer board is the beam profile A, the laser light intensity distribution of the light receiving surface 7F is An example of the beam profile B is shown. That is, in the example shown in FIG. 3, the height of the condenser lens 5 is adjusted so that the laser light intensity of the light receiving surface 7F is as shown in the intensity distribution B (Gaussian distribution) shown in FIG. Good transfer quality can be obtained by the LLO method (the laser light intensity distribution on the lower surface 2F of the transfer substrate becomes the top hat distribution).
  • the relationship between the laser light intensity distribution on the light receiving surface 7F and the laser light intensity distribution on the transfer substrate lower surface 2F is set to the distance between the transfer substrate lower surface 2F and the light receiving surface 7F. It is desirable to create a database accordingly and record it in the control unit 8. By creating a database, the control unit 8 observes the in-plane distribution of the laser light intensity of the light receiving surface 7F with the beam profiler 7 while changing the height position of the condensing lens 5 with the condensing lens driving unit 51. It is possible to know the height of the condenser lens 5 from which an appropriate intensity distribution can be obtained on the lower surface 2F of the transfer substrate.
  • the database creation is not limited to the relationship between the laser light intensity distribution on the light receiving surface 7F and the laser light intensity distribution on the lower surface 2F of the transfer substrate. That is, the relationship between the laser light intensity distribution of the actual light receiving surface 7F and the transfer state confirmed by performing the LLO method may be stored in a database according to the distance between the lower surface 2F of the transfer substrate and the light receiving surface 7F.
  • the laser light on the lower surface 2F of the transfer substrate has an intensity suitable for the LLO method within a range corresponding to the chip size of the chip component C, and good transfer is performed as shown in FIG. 4 (b). You can.
  • the chip component C when irradiating the taser light having an intensity distribution suitable for the chip size of the chip component C as shown in FIG. 4A, it is necessary to align the laser light irradiation position with respect to the chip component C to be transferred with high accuracy. .. That is, when the optical axis LC of the laser beam L is deviated from the center CC of the chip component C as shown in FIG. 5A, the chip component is in a state where the portion having weak laser light intensity (the right side of the chip in the figure) is not peeled off. Since peeling occurs from the left side of C, the chip component C cannot be transferred in parallel with the transfer destination substrate B.
  • the laser irradiation range of the intensity distribution D (top hat distribution) in FIG. 14 is widened, it is possible to irradiate the entire surface of each chip component C with laser light of appropriate intensity. It becomes.
  • the laser irradiation range in this way it is necessary to output the laser light source 4 at a high output, which leads to an increase in size and cost of the apparatus.
  • the chip component C adjacent to the chip component C to be transferred may be partially peeled off, which is not preferable.
  • FIG. 6 is a diagram showing a schematic configuration of a laser lift-off device 101, which is a chip transfer device in a modified example of the embodiment of the present invention.
  • the laser lift-off device 101 transfers the chip component C, which is densely arranged on the transfer substrate 2, to a predetermined position on the transfer destination substrate B.
  • the transfer substrate 2 has an adhesive layer 21 laminated on the base 20.
  • the laser lift-off device 101 includes a stage 3, a laser light source 4, a condenser lens 5, a condenser lens driving unit 51, a transfer substrate holding means 6, and a control unit 8.
  • the stage 3 has a function of holding the transfer destination substrate B and has a function of moving the transfer substrate B in the in-plane direction.
  • the laser light source 4 is a light source for irradiating a wavelength and energy such that the adhesive layer 21 is absorbed by the adhesive layer 21 of the transfer substrate 2 and the adhesive layer 21 is cured (decreased in adhesive strength) or decomposed to generate gas.
  • the laser light source 4 is not limited to the laser oscillator, but also includes an optical system that guides the light emitted from the laser oscillator. Further, the laser light source 4 may have a function of a beam shaper. That is, a beam shaper having a variable laser beam profile (in-plane intensity distribution) may be arranged between the laser oscillator and an optical system having a scanning function such as galvano.
  • the condensing hand lens condenses the laser light L emitted from the laser light source 4, and if it causes spherical aberration, the adhesive layer is adjusted by adjusting the height of the condensing lens driving unit 51 with respect to the adhesive layer 21.
  • the laser light intensity distribution within the 21 plane can be changed.
  • the transfer board holding means 6 holds the peripheral portion of the transfer board 2 by gripping it, and it is desirable that the transfer board holding means 6 holds a function of moving the transfer board 2 in the in-plane direction and aligning the transfer board 2. Further, it may have a function of adjusting the height of the transfer substrate 2 in the vertical direction.
  • the control unit 8 is connected to the stage 3, the laser light source 4, the transfer board 6, and the condenser lens drive unit 51.
  • the control unit 8 is connected to the stage 3 and controls the position of the stage 3 so that the chip component C can be transferred to a predetermined position on the transfer destination substrate B.
  • the control unit 8 can control the irradiation timing of the laser light L by the laser light source 4. Further, when the laser light source 4 includes an optical system such as a galvano, it is possible to control scanning of the laser beam L in the in-plane direction of the transfer substrate 2.
  • the control unit 8 can be connected to the transfer board holding means 6 to control the in-plane position of the transfer board 2.
  • the control unit 8 has a function of connecting to the condenser lens driving unit 51 to control the state of the condenser lens 5. With this function, it is possible to change the intensity distribution of the laser beam applied to the adhesive layer 21 of the transfer substrate 2. Therefore, as shown in the upper left of FIG. 6, the intensity distribution of the laser beam applied to the adhesive layer 21 becomes high in the vicinity of the outer peripheral portion with respect to the size CW of the chip component C (as a profile). It is also possible to switch between a donut-like high-intensity region) distribution and a top hat distribution that becomes stronger near the center.
  • the switching of the intensity distribution of the laser beam applied to the adhesive layer 21 is not limited to this, and for example, a Gaussian distribution may be applied instead of the top hat distribution.
  • FIG. 7 shows a laser lift-off device 1, which does not peel off the chip component C from the transfer substrate 2, but reduces the adhesive force of the adhesive layer 21 (or peels off the adhesive layer 21) in the vicinity of the outer peripheral portion of the chip component C.
  • the pre-irradiation step of irradiating light will be described.
  • the laser light source 4 has a beam shaper function. If it is, it is possible to change the state of the beam shaper and perform the same switching.
  • the intensity distribution of the laser beam irradiating the adhesive layer 21 of the transfer substrate 2 is higher in the vicinity of the outer peripheral portion and weaker in the central portion with respect to the size CW of the chip component C.
  • the adhesive strength of the adhesive layer 21 is maintained near the center of the chip component C, but in the vicinity of the outer peripheral portion, as shown in FIG. 7B, the low adhesive portion 21V It becomes.
  • the low adhesive portion 21V includes not only a reduced adhesive force but also a state of being peeled off from the chip component C or the base 20.
  • the adhesive force of the adhesive layer 21 is high near the center of the chip component C, so that the chip component C is maintained in the state of being arranged on the transfer substrate 2.
  • the chip component C is in a state of being easily peeled off in the vicinity of the outer peripheral portion.
  • the chip component C can be easily peeled from the transfer substrate 2. Then, it is transferred to the transfer destination substrate B while maintaining the parallel state (FIG. 8 (b)).
  • the chip component C can be transferred to the transfer destination substrate B even if the intensity of the laser light is not the top hat distribution but the Gaussian distribution.
  • the adhesive force of the adhesive layer 21 is weak in the vicinity of the outer peripheral portion of the chip component C due to the preliminary irradiation, even if the optical axis of the laser beam is slightly deviated from the center of the chip component C in the main irradiation, the chip component C Can be transferred to the transfer destination substrate B while maintaining parallelism.
  • the chip components arranged on the transfer substrate via the adhesive layer are transferred to the transfer destination substrate.
  • the laser beam can be scanned (in the in-plane direction of the transfer substrate 2) by an optical system such as galvano, pre-irradiation is performed at the positions of all the chip components C arranged on the transfer substrate 2, and then the pre-irradiation is performed. It is preferable to transfer the chip component C to the transfer destination substrate B by the main irradiation at the position of each chip component.
  • FIGS. 9 and 10 Examples of this are shown in FIGS. 9 and 10, which will be described using the in-plane arrangement of the chip component C on the transfer substrate 2.
  • FIG. 9A shows a chip component C arranged on the transfer substrate 2 via an adhesive 21, and shows a state in which pre-irradiation is performed centering on the chip component C on the upper right of this arrangement. Is shown in FIG. 9 (b).
  • FIG. 9B the region of high in-plane intensity of the pre-irradiation is shown in the pre-irradiation portion LP21P, and the low-adhesion portion 21V is generated in the vicinity of the outer peripheral portion of the chip component C by the pre-irradiation (FIG. 9 (c)). ).
  • FIG. 9A shows a chip component C arranged on the transfer substrate 2 via an adhesive 21, and shows a state in which pre-irradiation is performed centering on the chip component C on the upper right of this arrangement. Is shown in FIG. 9 (b).
  • FIG. 9B the region of high in-plane intensity of the pre-irradiation is shown in the pre-irradiation portion LP21P, and the low-adhe
  • 9C shows that the low-adhesive portion is formed by the pre-irradiation, and shows the state in which the pre-irradiation is performed centering on the adjacent chip component C. That is, instead of directly irradiating the chip component C in which the low adhesive portion 21V is generated by the pre-irradiation, the transfer substrate 2 is sequentially pre-irradiated according to the arrangement of the chip component C (FIG. 9 (FIG. 9). d)).
  • FIG. 10A illustrates a state in which pre-irradiation according to the arrangement position of the chip component C to be transferred (excluding defective products) of the transfer substrate B is completed in this way.
  • a low adhesive portion 21V is formed on the adhesive layer 21 in the vicinity of the outer peripheral portion of the chip component C according to the individual arrangement positions of the chip components C arranged on the transfer substrate 2.
  • each chip component C is in a state of being attached to the transfer substrate 2 by the adhesive layer 21 that maintains the adhesive strength near the center, but the adhesive layer 21 near the outer peripheral portion is low due to pre-irradiation.
  • the adhesive portion is 21V.
  • the chip component C can be peeled off even if the light intensity near the outer peripheral portion of the chip component C is low. That is, by providing the main irradiation portion LP21L having a high light intensity near the center of the chip component C as shown in FIG. 10 (b), the low adhesive portion 21V is also provided near the center of the chip component C as shown in FIG. 10 (c). , The chip component C is peeled off and transferred to the transfer destination substrate B. After that, the chip component C (adhesive layer 21) arranged on the transfer substrate 2 is subjected to the main irradiation as shown in FIG. 10D, and the chip component C is sequentially transferred to a predetermined position on the transfer destination substrate B.
  • the shape of the laser beam irradiation surface is round in FIGS. 9 and 10, but the shape is not limited to this. If the beam shaper has a function of changing the shape of the irradiation surface, it can be made into a quadrangular shape or the like matching the chip shape as shown in FIG.
  • the laser optical system is provided with a beam shaper. In some cases, it is possible to optimize the laser light intensity distribution on the machined surface by using the function of the beam shaper.
  • Laser lift-off device (chip transfer device) 2 Transfer board 2F Transfer board lower surface (processed surface) 3 Stage 4 Laser light source 5 Condensing lens 6 Transfer substrate holding means 7 Beam profiler 7F Light receiving surface 8 Control unit 20 Base 21 Adhesive layer 51 Condensing lens drive unit B Transfer destination substrate C Chip parts CW chip size H2F Transfer substrate bottom surface height L Laser light

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Abstract

Provided are an optical lens height adjusting method, a chip transfer method, a collection lens height adjusting device, and a chip transfer device with which it is possible, when transferring a chip component onto a transfer destination substrate by a laser lift-off, to obtain good transfer quality by optimizing a laser light intensity distribution at a processing surface that is the interface between the chip component and the transfer substrate. Specifically, a collection lens height adjusting method, a chip transfer method, a collection lens height adjusting device, and a chip transfer device are provided, by which the height of a collection lens is adjusted by providing, under the transfer substrate, a beam profiler having an upward light-receiving surface for measuring a laser light intensity distribution, and measuring the laser light intensity distribution through the transfer substrate at a position where the chip component is not disposed.

Description

集光レンズの高さ調整方法およびチップ転写方法ならびに集光レンズの高さ調整装置およびチップ転写装置Condensing lens height adjustment method and chip transfer method, and condensing lens height adjustment device and chip transfer device
　本発明は、光レンズの高さ調整方法およびチップ転写方法ならびに集光レンズの高さ調整装置およびチップ転写装置に関する。 The present invention relates to an optical lens height adjusting method and a chip transfer method, and a condenser lens height adjusting device and a chip transfer device.
　微細加工技術の進歩による半導体チップの微小化や、ＬＥＤの発光効率向上によるＬＥＤチップの小型化が進んでいる。このため、半導体チップやＬＥＤチップ等のチップ部品を、１枚のウェハ基板に、密に多数形成できるようになってきている。 Semiconductor chips are becoming smaller due to advances in microfabrication technology, and LED chips are becoming smaller due to improved luminous efficiency of LEDs. Therefore, a large number of chip components such as semiconductor chips and LED chips can be densely formed on one wafer substrate.
　近年、ウェハ基板に密に形成されダイシングされたチップ部品や、ウェハ基板上の配置状態のままで転写基板に転写されたチップ部品を、所定の間隔を開けて配線基板等の転写先基板に再配列し、高速高精度に実装する用途がある。例えば、画像表示装置として注目されているマイクロＬＥＤディスプレイ製造においては、数百万個のＬＥＤチップを、間隔を開けＴＦＴ基板の所定位置に実装する必要がある。 In recent years, chip components that are densely formed on a wafer substrate and diced, or chip components that have been transferred to a transfer substrate in the state of being arranged on the wafer substrate, are re-transferred to a transfer destination substrate such as a wiring board at predetermined intervals. There are applications for arranging and mounting with high speed and high accuracy. For example, in the manufacture of micro LED displays, which are attracting attention as image display devices, it is necessary to mount millions of LED chips at predetermined positions on a TFT substrate at intervals.
　ここで、ウェハ基板を含む転写基板上に高密度に配列された個々のチップ部品は、チップ部品の電極と転写先基板の電極との電気的接合を確保するため、誤差が数μｍ程度の高精度に転写される必要がある。しかも多数のチップ部品を高速に転写する必要がある。 Here, the individual chip components arranged at high density on the transfer substrate including the wafer substrate have a high error of about several μm in order to ensure electrical bonding between the electrodes of the chip components and the electrodes of the transfer destination substrate. It needs to be transferred with precision. Moreover, it is necessary to transfer a large number of chip parts at high speed.
　このような高速、高精度にチップ部品の転写を行い、転写先基板に所定の間隔を空け、高精度に実装するプロセスが種々検討されている。なかでも、レーザーリフトオフ法（以後ＬＬＯ法と記す）については多くの検討がなされている（例えば特許文献１）。 Various processes have been studied for transferring chip components at such high speed and with high accuracy, leaving a predetermined interval on the transfer destination substrate, and mounting the chips with high accuracy. In particular, the laser lift-off method (hereinafter referred to as the LLO method) has been studied a lot (for example, Patent Document 1).
　 図１２ではＬＬＯ法により転写基板２から転写先基板Ｂにチップ部品Ｃを転写配置する例を示している。すなわち、右端のチップ部品Ｃにレーザー光Ｌを照射して、転写先基板Ｂに転写する状態を示している。ここで、右端のチップ部品Ｃは転写先基板Ｂの所定位置上部に位置合わせされている。ここで、レーザー光Ｌの波長はチップ部品Ｃが転写基板２から剥離するのに適した範囲から選ばれる。例えば、転写基板２を透過しつつチップ部品Ｃの素材に吸収される波長を用いれば、温度上昇に伴い素材が分解して生じたガスにより転写基板２からチップ部品Ｃは剥離される。 FIG. 12 shows an example in which the chip component C is transferred and arranged from the transfer substrate 2 to the transfer destination substrate B by the LLO method. That is, the state in which the rightmost chip component C is irradiated with the laser beam L and transferred to the transfer destination substrate B is shown. Here, the rightmost chip component C is aligned with the upper portion of the transfer destination substrate B at a predetermined position. Here, the wavelength of the laser beam L is selected from a range suitable for the chip component C to peel off from the transfer substrate 2. For example, if a wavelength that is absorbed by the material of the chip component C while being transmitted through the transfer substrate 2 is used, the chip component C is peeled from the transfer substrate 2 by the gas generated by the decomposition of the material as the temperature rises.
　 図１３は、レーザー光Ｌの照射により転写基板２から剥離した右端のチップ部品Ｃが転写先基板Ｂに転写された状態を示している。ここで、右端のチップ部品Ｃは直下に転写されるため、転写先基板Ｂの所定位置に配置される。なお、転写に伴うチップ部品の直下への移動距離を、チップ部品厚みより大きくしておけば、転写先基板Ｂにチップ部品Ｃが転写されていても転写基板２を水平方向に移動させることは可能である。 FIG. 13 shows a state in which the rightmost chip component C peeled off from the transfer substrate 2 by irradiation with the laser beam L is transferred to the transfer destination substrate B. Here, since the rightmost chip component C is transferred directly below, it is arranged at a predetermined position on the transfer destination substrate B. If the moving distance of the chip component directly under the chip component due to the transfer is set to be larger than the thickness of the chip component, the transfer substrate 2 can be moved in the horizontal direction even if the chip component C is transferred to the transfer destination substrate B. It is possible.
特開２０１０－１６１２２１号公報Japanese Unexamined Patent Publication No. 2010-161221
　ＬＬＯ法で転写基板２から転写先基板Ｂにチップ部品Ｃを転写するためには、レーザー光Ｌの波長に加えて、転写基板２とチップ部品Ｃの界面である加工面におけるレーザー光の強度分布が重要である。その具体例を、レーザー光Ｌの加工面における強度分布と転写品質の関係で断面図で示したのが 図１４である。 In order to transfer the chip component C from the transfer substrate 2 to the transfer destination substrate B by the LLO method, in addition to the wavelength of the laser beam L, the intensity distribution of the laser beam on the processed surface which is the interface between the transfer substrate 2 and the chip component C. is important. A specific example thereof is shown in a cross-sectional view in relation to the intensity distribution on the processed surface of the laser beam L and the transfer quality.
　 図１４において、強度分布Ｄ（トップハット分布）はチップ部品Ｃが転写基板２から剥離しつつ過剰なエネルギーを受けずに転写先基板Ｂに確実に転写される（加工面における）レーザー光Ｌの強度分布である。他方、強度分布Ａは均一な強度分布ではあるが、加工面におけるレーザー光Ｌの強度が全体的に弱くチップ部品Ｃは剥離しない。強度分布Ｂ（ガウシアン分布）ではチップ中心部では十分なレーザー光Ｌの強度が得られていてもチップ部品Ｃ周縁部ではチップ部品Ｃが剥離しないため転写不良を生じる。また、強度分布Ｃ（Ｍ字分布、照射面で見たらドーナッツ状）ではチップ部品Ｃの周縁部でのレーザー光Ｌが過剰になるため、チップ部品Ｃは転写基板２から剥離するものの、チップ部品の一角から剥離が生じることによるチップ部品Ｃの転写時横ズレや、チップ部品Ｃ角部の破損が懸念される。 In FIG. 14, the intensity distribution D (top hat distribution) is the laser light L (on the machined surface) in which the chip component C is surely transferred to the transfer destination substrate B without receiving excessive energy while being peeled from the transfer substrate 2. Intensity distribution. On the other hand, although the intensity distribution A is a uniform intensity distribution, the intensity of the laser beam L on the machined surface is generally weak and the chip component C does not peel off. In the intensity distribution B (Gaussian distribution), even if sufficient intensity of the laser beam L is obtained in the central portion of the chip, the chip component C does not peel off at the peripheral portion of the chip component C, so that transfer failure occurs. Further, in the intensity distribution C (M-shaped distribution, donut-shaped when viewed from the irradiation surface), the laser beam L at the peripheral edge of the chip component C becomes excessive, so that the chip component C is peeled off from the transfer substrate 2, but the chip component There is a concern that the chip component C may be laterally displaced during transfer due to peeling from one corner, or that the corner portion C of the chip component may be damaged.
　そこで、 図１２における集光レンズ５の高さ調整等を行って、加工面２Ｆのレーザー光強度分布を適正化する必要がある。そこで、従来、 図１５（ｂ）に例示するような手法で加工面のレーザー光強度分布を調整している。すなわち、 図１５（ａ）に示す加工面２Ｆの高さにおけるレーザー光Ｌの強度分布を、（転写基板２がない状態で）加工面２Ｆと同じ高さＨ２Ｆに受光面７Ｆを有するビームプロファイラ７で観察しながら、受光面７Ｆの光強度分布が（ 図１４の強度分布Ｄのように）適正化するように集光レンズ５の高さ位置を求めている。そうして、このようにして調整した集光レンズ５の高さ位置でＬＬＯ法を行っている。 Therefore, it is necessary to adjust the height of the condenser lens 5 in FIG. 12 to optimize the laser light intensity distribution on the machined surface 2F. Therefore, conventionally, the laser light intensity distribution on the machined surface is adjusted by a method as illustrated in FIG. 15 (b). That is, the intensity distribution of the laser beam L at the height of the machined surface 2F shown in FIG. 15 (a) is the beam profiler 7 having the light receiving surface 7F at the same height H2F as the machined surface 2F (without the transfer substrate 2). The height position of the condenser lens 5 is determined so that the light intensity distribution on the light receiving surface 7F is optimized (as in the intensity distribution D in FIG. 14) while observing with. Then, the LLO method is performed at the height position of the condenser lens 5 adjusted in this way.
　しかし、 図１５（ｂ）に示した手法で集光レンズ５の高さを調整しても、ＬＬＯ法でのチップ部品Ｃの転写において、品質転写不良が生じることがあった。すなわち、転写基板２を配置した状態における加工面での光強度分布が適正でないことがあった。 However, even if the height of the condenser lens 5 is adjusted by the method shown in FIG. 15B, quality transfer failure may occur in the transfer of the chip component C by the LLO method. That is, the light intensity distribution on the processed surface in the state where the transfer substrate 2 is arranged may not be appropriate.
　本発明は、上記問題を鑑みてなされたものであり、レーザーリフトオフ法でチップ部品を転写先の基板に転写するのに際して、チップ部品と転写基板の界面である加工面におけるレーザー光強度分布を適正化して良好な転写品質が得られるような、光レンズの高さ調整方法およびチップ転写方法ならびに集光レンズの高さ調整装置およびチップ転写装置を提供する。 The present invention has been made in view of the above problems, and when the chip component is transferred to the transfer destination substrate by the laser lift-off method, the laser light intensity distribution on the processed surface which is the interface between the chip component and the transfer substrate is appropriate. Provided are a method for adjusting the height of an optical lens and a method for transferring a chip, and a device for adjusting the height of a condenser lens and a device for transferring a chip so that good transfer quality can be obtained.
　上記課題を解決するために、請求項１に記載の発明は、
複数のチップ部品を下面に配置した転写基板の、前記チップ部品と前記転写基板の界面である加工面に、前記転写基板越しにレーザー光を照射して、前記チップ部品を剥離して、前記チップ部品と対向する転写先基板の上面に転写するレーザーリフトオフ転写法において、レーザー光源と前記転写基板の間に配置され、上下移動可能な集光レンズの高さを調整して、前記加工面の面内におけるレーザー光の強度分布を適正化する、集光レンズの高さ調整方法であって、
前記転写基板の下側に、上向きの受光面を有し、レーザー光の強度分布を測定するビームプロファイラを配置し、前記転写基板越しに、前記チップ部品が配置されていない位置で、レーザー光の強度分布を測定して、前記集光レンズの高さを調整する集光レンズの高さ調整方法である。 In order to solve the above problems, the invention according to claim 1 is
The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with a laser beam through the transfer substrate to peel off the chip components, and the chip is peeled off. In the laser lift-off transfer method of transferring to the upper surface of the transfer destination substrate facing the component, the surface of the machined surface is adjusted by adjusting the height of a condenser lens that is arranged between the laser light source and the transfer substrate and can move up and down. It is a method of adjusting the height of the condenser lens that optimizes the intensity distribution of the laser light inside.
A beam profiler having an upward light receiving surface and measuring the intensity distribution of the laser light is arranged under the transfer substrate, and the laser light is emitted at a position where the chip component is not arranged through the transfer substrate. This is a method for adjusting the height of a condenser lens by measuring the intensity distribution and adjusting the height of the condenser lens.
　請求項２に記載の発明は、請求項１に記載の集光レンズの高さ調整方法であって、
前記受光面を前記転写基板下面に密着させて行う集光レンズの高さ調整方法である。 The invention according to claim 2 is the method for adjusting the height of the condenser lens according to claim 1.
This is a method for adjusting the height of a condenser lens, in which the light receiving surface is brought into close contact with the lower surface of the transfer substrate.
　請求項３に記載の発明は、請求項１に記載の集光レンズの高さ調整方法であって、
前記受光面が前記転写基板下面より下にある集光レンズの高さ調整方法である。 The invention according to claim 3 is the method for adjusting the height of the condenser lens according to claim 1.
This is a method for adjusting the height of a condenser lens in which the light receiving surface is below the lower surface of the transfer substrate.
　請求項４に記載の発明は、請求項３に記載の集光レンズの高さ調整方法であって、前記転写基板の屈折率が既知の場合、
前記受光面と前記転写基板下面の間隔に応じて、前記転写基板下面におけるレーザーの強度分布を前記受光面のレーザーの強度分布から推定する集光レンズの高さ調整方法である。 The invention according to claim 4 is the method for adjusting the height of the condenser lens according to claim 3, when the refractive index of the transfer substrate is known.
This is a method for adjusting the height of a condenser lens, in which the intensity distribution of the laser on the lower surface of the transfer substrate is estimated from the intensity distribution of the laser on the light receiving surface according to the distance between the light receiving surface and the lower surface of the transfer substrate.
　請求項５に記載の発明は、
複数のチップ部品が粘着層を介して配置されている転写基板の前記粘着層に、前記転写基板越しにレーザー光を照射して、前記チップ部品を選択的に転写先基板に転写するチップ転写方法であって、
前記チップ部品の外周部近傍の粘着層の粘着力が低下するように、ドーナッツ状の高強度域を有する強度分布のレーザー光を照射する予備照射と、前記予備照射工程を経た前記チップ部品と前記転写基板の間の粘着層に、トップハット分布またはガウシアン分布の強度分布を有するレーザー光を照射して、前記チップ部品を前記転写基板から剥離して前記転写先基板に転写する本照射とを行うチップ転写方法である。 The invention according to claim 5
A chip transfer method in which the adhesive layer of a transfer substrate on which a plurality of chip components are arranged via an adhesive layer is irradiated with laser light through the transfer substrate to selectively transfer the chip components to a transfer destination substrate. And
Pre-irradiation that irradiates a laser beam with an intensity distribution having a donut-shaped high intensity region so that the adhesive strength of the adhesive layer near the outer peripheral portion of the chip component is reduced, and the chip component and the chip component that have undergone the pre-irradiation step. The adhesive layer between the transfer substrates is irradiated with a laser beam having an intensity distribution of a top hat distribution or a Gaussian distribution, and the chip component is peeled from the transfer substrate and transferred to the transfer destination substrate. This is a chip transfer method.
　請求項６に記載の発明は、
複数のチップ部品を下面に配置した転写基板の、前記チップ部品と前記転写基板の界面である加工面に、前記転写基板越しにレーザー光を照射して、前記チップ部品を剥離して、前記チップ部品と対向する転写先基板の上面に転写するチップ転写装置において、
レーザー光源と前記転写基板の間に配置され、上下移動可能な集光レンズの高さを調整して、前記加工面の面内におけるレーザー光の強度分布を適正化する、集光レンズの高さ調整装置であって、
前記集光レンズを上下に駆動する集光レンズ駆動部と、前記転写基板下面より下に、上向きの受光面を有するように配置した、レーザー光の強度分布を測定するビームプロファイラと、前記集光レンズ駆動部および前記ビームプロファイラに接続した、制御部を備え、
前記制御部が、前記集光レンズの高さ位置を変えながら、前記受光面のレーザーの強度分布を取得する機能を有する集光レンズの高さ調整装置ある。 The invention according to claim 6
The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light through the transfer substrate to peel off the chip components, and the chip is peeled off. In a chip transfer device that transfers to the upper surface of a transfer destination substrate facing a component,
The height of the condenser lens, which is arranged between the laser light source and the transfer substrate and adjusts the height of the condenser lens that can move up and down to optimize the intensity distribution of the laser light in the plane of the machined surface. It ’s an adjustment device,
A condensing lens driving unit that drives the condensing lens up and down, a beam profiler for measuring the intensity distribution of laser light, which is arranged so as to have an upward light receiving surface below the lower surface of the transfer substrate, and the condensing. It has a lens drive unit and a control unit connected to the beam profiler.
There is a condenser lens height adjusting device having a function of the control unit acquiring the intensity distribution of the laser on the light receiving surface while changing the height position of the condenser lens.
　請求項７に記載の発明は、
複数のチップ部品を下面に配置した転写基板の、前記チップ部品と前記転写基板の界面である加工面に、前記転写基板越しに上からレーザー光を照射して、前記チップ部品を剥離して、前記チップ部品と対向する転写先基板の上面に転写するチップ転写装置であって、
請求項６に記載の集光レンズの高さ調整装置を備えたチップ転写転写装置である。 The invention according to claim 7
The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light from above through the transfer substrate to peel off the chip components. A chip transfer device that transfers to the upper surface of a transfer destination substrate facing the chip component.
A chip transfer transfer device including the height adjusting device for a condenser lens according to claim 6.
　請求項８に記載の発明は、
複数のチップ部品が粘着層を介して配置されている転写基板の前記粘着層に、前記転写基板越しにレーザー光を照射して、前記チップ部品を選択的に転写先基板に転写するチップ転写装置であって、
前記粘着層でレーザーアブレーションを起こし得る波長のレーザー発振器と、前記レーザー発振器と前記転写基板の間に配置され、レーザー光を集光する集光手段と、前記レーザー発振器の前記集光手段の間に配置されたビームシェイパとを備え、前記ビームシェイパの状態を変化させ、前記粘着層に照射するレーザー光の強度分布を、リング状の高強度域を有する形状と、ガウス形状またはトップハット形状に切り替えることができるチップ転写装置である。 The invention according to claim 8 is
A chip transfer device that selectively transfers the chip components to the transfer destination substrate by irradiating the adhesive layer of the transfer substrate on which a plurality of chip components are arranged via the adhesive layer with laser light through the transfer substrate. And
Between a laser oscillator having a wavelength capable of causing laser ablation in the adhesive layer, a condensing means arranged between the laser oscillator and the transfer substrate and condensing laser light, and the condensing means of the laser oscillator. With an arranged beam shaper, the state of the beam shaper can be changed, and the intensity distribution of the laser beam irradiating the adhesive layer can be switched between a ring-shaped high-intensity region shape and a Gaussian shape or a top hat shape. It is a chip transfer device that can be used.
　本発明の転写基板を用いることで、レーザーリフトオフ法でチップ部品を転写先の基板に転写するのに際して、チップ部品と転写基板の界面である加工面におけるレーザー光強度分布を適正化して良好な転写品質が得られる。 By using the transfer substrate of the present invention, when the chip component is transferred to the transfer destination substrate by the laser lift-off method, the laser light intensity distribution on the processed surface, which is the interface between the chip component and the transfer substrate, is optimized and good transfer is performed. Quality is obtained.
本発明の実施形態におけるレーザーリフトオフ装置の構成を示す図である。It is a figure which shows the structure of the laser lift-off device in embodiment of this invention. 本発明の実施形態における集光レンズの高さ調整を行う手法を説明する図であり、（ａ）集光面を転写基板下面に合わせて実施する状態、（ｂ）集光面を転写基板下面から話して実施する状態を示す図である。It is a figure explaining the method of adjusting the height of the condensing lens in embodiment of this invention, (a) the state which carries out by aligning the condensing surface with the lower surface of a transfer substrate, (b) the condensing surface is the lower surface of a transfer substrate It is a figure which shows the state which carries out by talking from. 本発明の実施形態における集光レンズの高さ調整を、集光面を転写基板下面から話して実施する手法について説明する図である。It is a figure explaining the method of performing the height adjustment of the condensing lens in the embodiment of the present invention by talking about the condensing surface from the lower surface of the transfer substrate. レーザーリフトオフ法について説明するもので、（ａ）チップ部品を転写基板から転写先基板に転写する過程を示す図であり、（ｂ）転写基板から剥離したチップ部品が転写先基板に転写された状態を示す図である。The laser lift-off method is described. It is a diagram showing (a) a process of transferring a chip component from a transfer substrate to a transfer destination substrate, and (b) a state in which the chip component peeled from the transfer substrate is transferred to the transfer destination substrate. It is a figure which shows. レーザーリフトオフ法でレーザー光軸とチップ部品中心に位置ズレが生じている場合について説明するもので、（ａ）チップ部品を転写基板から転写先基板に転写する過程を示す図であり、（ｂ）転写基板からチップ部品が部分的に剥離した状態を示す図である。The case where the laser optical axis and the center of the chip component are displaced by the laser lift-off method will be described. It is a diagram showing (a) a process of transferring a chip component from a transfer substrate to a transfer destination substrate, and (b). It is a figure which shows the state which the chip component was partially peeled off from the transfer board. 本発明の実施形態変形例におけるチップ転写装置の構成を説明する図である。It is a figure explaining the structure of the chip transfer apparatus in the embodiment modification of this invention. 本発明の実施形態変形例におけるレーザー光の予備照射について説明するものであり、（ａ）レーザー光を照射している過程を示す図であり、（ｂ）予備照射によりチップ部品外周部近傍の粘着層の変化を示す図である。The pre-irradiation of the laser beam in the modified example of the embodiment of the present invention will be described, (a) a diagram showing the process of irradiating the laser beam, and (b) adhesion in the vicinity of the outer peripheral portion of the chip component by the pre-irradiation. It is a figure which shows the change of a layer. 本発明の実施形態変形例におけるレーザー光の本照射について説明するものであり、（ａ）レーザー光を照射している過程を示す図であり、（ｂ）転写基板から剥離したチップ部品が転写先基板に転写された状態を示す図である。The main irradiation of the laser beam in the modified example of the embodiment of the present invention will be described, (a) a diagram showing a process of irradiating the laser beam, and (b) a chip component peeled from the transfer substrate is a transfer destination. It is a figure which shows the state transferred to the substrate. 本発明の実施形態変形例におけるレーザー光の予備照射についてチップの面内形状と関係付けて説明するものであり、（ａ）転写基板面上のチップ部品配列を示す図であり、（ｂ）予備照射のレーザー光強度分布を例示する図であり、（ｃ）予備照射後の粘着層の状態と予備照射を行っているチップ部品でのレーザー光強度分布を例示する図であり、（ｄ）予備照射位置をスキャンして転写基板上のチップ部品に順次行っている状態を例示する図である。The preliminary irradiation of the laser beam in the modified example of the embodiment of the present invention will be described in relation to the in-plane shape of the chip, (a) a diagram showing the chip component arrangement on the transfer substrate surface, and (b) a preliminary It is a figure which exemplifies the laser light intensity distribution of irradiation, (c) is a figure which exemplifies the state of the adhesive layer after pre-irradiation and the laser light intensity distribution in the chip component which performs pre-irradiation, and (d) reserve It is a figure which illustrates the state which scans an irradiation position and sequentially performs to a chip component on a transfer substrate. 本発明の実施形態変形例におけるレーザー光の本照射についてチップの面内形状と関係付けて説明するものであり、（ａ）予備照射を行った後の粘着層の状態を例示する図であり、（ｂ）予備照射済のチップ部品に行う本照射のレーザー光強度分布を示す図であり、（ｃ）本照射によりチップ部品が転写基板から剥離した状態を例示する図であり、（ｄ）順次本照射位置をスキャンして行く状態を示す図である。The main irradiation of the laser beam in the modified example of the embodiment of the present invention will be described in relation to the in-plane shape of the chip, and (a) is a diagram illustrating the state of the adhesive layer after the pre-irradiation. (B) It is a figure which shows the laser light intensity distribution of the main irradiation performed on the chip component which has been pre-irradiated, (c) is a figure which illustrates the state which the chip component was peeled off from a transfer substrate by the main irradiation, and (d) sequentially It is a figure which shows the state which scans the main irradiation position. 本発明の実施形態変形例において、レーザーのビーム形状を四角にした例で、（ａ）予備照射のレーザー光強度分布を示す図であり、（ｂ）予備照射済のチップ部品に行う本照射のレーザー光強度分布を示す図である。In the modified example of the embodiment of the present invention, it is an example in which the beam shape of the laser is square, (a) a diagram showing the laser light intensity distribution of the pre-irradiation, and (b) the main irradiation performed on the pre-irradiated chip component. It is a figure which shows the laser light intensity distribution. レーザーリフトオフ法により、チップ部品を転写基板から転写先基板に転写する状態を示す図である。It is a figure which shows the state which the chip component is transferred from the transfer substrate to the transfer destination substrate by the laser lift-off method. レーザーリフトオフ法により、転写基板から剥離した転写先基板に転写された状態を示す図である。It is a figure which shows the state which was transferred to the transfer destination substrate which was separated from the transfer substrate by the laser lift-off method. レーザーリフトオフ法で、チップ部品のサイズに対するレーザー光の強度分布と転写品質の関係を説明する図である。It is a figure explaining the relationship between the intensity distribution of a laser beam, and the transfer quality with respect to the size of a chip component by the laser lift-off method. 集光レンズ高さ調整の従来例を説明する図であり、（ａ）レーザーリフトオフを行う構成を示し、（ｂ）レーザーリフトオフの加工面と同じ面高さのレーザー光強度分布をビームプロファイラで観測する構成を示す図である。It is a figure explaining the conventional example of the condenser lens height adjustment, (a) the configuration which performs laser lift-off is shown, (b) the laser light intensity distribution of the same surface height as the processed surface of laser lift-off is observed with a beam profiler. It is a figure which shows the structure which performs.
　本発明の実施形態について、図面を用いて説明する。図１は本発明の実施形態におけるチップ転写装置であるレーザーリフトオフ装置１の構成を示す図である。 An embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing a configuration of a laser lift-off device 1 which is a chip transfer device according to an embodiment of the present invention.
　レーザーリフトオフ装置１は、転写基板２に高密度に配置されたチップ部品Cを転写先基板Ｂの所定位置に転写するものである。図１において転写基板２はベース２０に粘着層２１を積層した構成となっているが、これに限定されるものではなく（粘着層２１のない）ウェハ基板であってもよい。 The laser lift-off device 1 transfers the chip component C densely arranged on the transfer substrate 2 to a predetermined position on the transfer destination substrate B. In FIG. 1, the transfer substrate 2 has a configuration in which the adhesive layer 21 is laminated on the base 20, but the present invention is not limited to this, and a wafer substrate (without the adhesive layer 21) may be used.
　レーザーリフトオフ装置１は、ステージ３、レーザー光源４、集光レンズ５、集光レンズ駆動部５１、転写基板保持手段６、ビームプロファイラ７、および制御部８を構成要素としている。また、レーザーリフトオフ装置１において、集光レンズ駆動部５１、ビームプロファイラ７、制御部８は、集光レンズの高さ調整装置を構成している。 The laser lift-off device 1 includes a stage 3, a laser light source 4, a condenser lens 5, a condenser lens driving unit 51, a transfer substrate holding means 6, a beam profiler 7, and a control unit 8. Further, in the laser lift-off device 1, the condenser lens driving unit 51, the beam profiler 7, and the control unit 8 constitute a condenser lens height adjusting device.
　ステージ３は、転写先基板Ｂを保持する機能を有しており、転写基板Ｂを面内方向に移動させる機能を有していることが望ましい。 It is desirable that the stage 3 has a function of holding the transfer destination substrate B and has a function of moving the transfer substrate B in the in-plane direction.
　レーザー光源４はレーザーリフトオフに必要な波長およびエネルギーを転写基板２の下面２Ｆでありチップ部品Ｃとの界面である加工面に照射するための光源であり、レーザー発振器に限定されるものではなく、レーザー発振器から放射された光を導く光学系を含めたものもレーザー光源４に該当する。 The laser light source 4 is a light source for irradiating the processed surface which is the lower surface 2F of the transfer substrate 2 and the interface with the chip component C with the wavelength and energy required for laser lift-off, and is not limited to the laser oscillator. A laser light source 4 also includes an optical system that guides light emitted from a laser oscillator.
　集光レンズ５は、レーザー光源４から発せられたレーザー光Ｌを集光するもので、集光レンズ駆動部５１による上下移動により、転写基板２に対する高さ位置を調整することができ、これにより転写基板下面２Ｆのレーザー光強度分布が変化する。 The condenser lens 5 collects the laser light L emitted from the laser light source 4, and the height position with respect to the transfer substrate 2 can be adjusted by the vertical movement by the condenser lens driving unit 51. The laser light intensity distribution on the lower surface 2F of the transfer substrate changes.
　転写基板保持手段６は転写基板２の周縁部を把持することで保持するものであり、転写基板２を面内方向に移動させて位置合わせする機能を保持していることが望ましい。また、転写基板２を上下方向に高さ調整する機能を有していてもよい。 The transfer board holding means 6 holds the peripheral portion of the transfer board 2 by gripping it, and it is desirable that the transfer board holding means 6 holds a function of moving the transfer board 2 in the in-plane direction and aligning the transfer board 2. Further, it may have a function of adjusting the height of the transfer substrate 2 in the vertical direction.
　ビームプロファイラ７はレーザー光等を受光して、受光面７Ｆにおける光強度の面内分布を観察するものである。本実施形態において、受光面７Ｆはレーザー光Ｌと対向する上向きになっている。受光面７Ｆの高さを調整する機能を備えていてもよい。 The beam profiler 7 receives laser light or the like and observes the in-plane distribution of light intensity on the light receiving surface 7F. In the present embodiment, the light receiving surface 7F faces upward facing the laser beam L. It may have a function of adjusting the height of the light receiving surface 7F.
　制御部８は、集光レンズ駆動部５１およびビームプロファイラ７と接続している。制御部８は、集光レンズ駆動部５１と接続して、集光レンズ５の高さ制御を行う機能を有している。また、制御部８は、ビームプロファイラ７と接続して、任意のタイミングで光強度分布を２次元画像として取得することができる。さらに、制御部８は記憶手段と演算手段を内蔵し、集光レンズ５の高さ情報とビームプロファイラ７が取得した光強度分布２次元画像を関連付ける機能を有していることが望ましい。 The control unit 8 is connected to the condenser lens drive unit 51 and the beam profiler 7. The control unit 8 has a function of connecting to the condenser lens driving unit 51 to control the height of the condenser lens 5. Further, the control unit 8 can be connected to the beam profiler 7 to acquire the light intensity distribution as a two-dimensional image at an arbitrary timing. Further, it is desirable that the control unit 8 has a built-in storage means and a calculation means, and has a function of associating the height information of the condenser lens 5 with the light intensity distribution two-dimensional image acquired by the beam profiler 7.
　　以下、図１に示したレーザーリフトオフ装置１で、集光レンズ５の高さ調整を行う手法について図１から図３を用いて説明する。 Hereinafter, a method of adjusting the height of the condenser lens 5 with the laser lift-off device 1 shown in FIG. 1 will be described with reference to FIGS. 1 to 3.
　図２（ａ）は、転写基板２でチップ部品Ｃが配置されていない位置を集光レンズ５の直下に配置して、ビームプロファイラ７の受光面７Ｆを転写基板下面２Ｆと同一高さに設けた状態を示すものである。この状態においてレーザー光Ｌを照射すれば、ビームプロファイラ７は転写基板下面２Ｆのレーザー光強度の面内分布を観察することができる。すなわち、（チップ部品Ｃが配置された場所の）加工面におけるレーザー光強度の面内分布と等価な画像を得ることができる。そこで、制御部８が集光レンズ駆動部５１により集光レンズ５の高さ位置を変えながらビームプロファイラ７によりレーザー光強度の面内分布を観察することで、適正な強度分布が得られる集光レンズ５の高さを知ることができる。ここで、適正な強度分布か否かはビームプロファイラ７の画像を人が観察して判断してもよいが、制御部８が画像解析プログラムにより自動判定してもよい。 In FIG. 2A, the position where the chip component C is not arranged on the transfer substrate 2 is arranged directly under the condenser lens 5, and the light receiving surface 7F of the beam profiler 7 is provided at the same height as the lower surface 2F of the transfer substrate. It shows the state of the lens. If the laser beam L is irradiated in this state, the beam profiler 7 can observe the in-plane distribution of the laser beam intensity on the lower surface 2F of the transfer substrate. That is, it is possible to obtain an image equivalent to the in-plane distribution of the laser light intensity on the machined surface (at the place where the chip component C is arranged). Therefore, the control unit 8 observes the in-plane distribution of the laser light intensity with the beam profiler 7 while changing the height position of the condenser lens 5 with the condenser lens drive unit 51, so that an appropriate intensity distribution can be obtained. You can know the height of the lens 5. Here, whether or not the intensity distribution is appropriate may be determined by a person observing the image of the beam profiler 7, or may be automatically determined by the control unit 8 by an image analysis program.
　ところで、図２（ａ）のように、ビームプロファイラ７の受光面７Ｆを転写基板下面２Ｆと同一高さに設けるためには、受光面７Ｆの高さ調整を行える機能を有していることが望ましいが、受光面７Ｆの高さ調整において上昇しすぎると、転写基板２を押し上げた状態となるため、ＬＬＯ法における加工面のレーザー光強度の面内分布とは異なるものを観察することになってしまう。また、転写基板２が粘着層２１を有している場合、受光面７Ｆが転写基板下面２Ｆと密着して剥離し難くなることによる弊害もある。具体的には、受光面７Ｆに粘着層２１の一部が付着することがあるため、転写基板下面２Ｆにおけるレーザー光強度の面内分布を適正化を高頻度で行えなくなる。 By the way, as shown in FIG. 2A, in order to provide the light receiving surface 7F of the beam profiler 7 at the same height as the lower surface 2F of the transfer substrate, it is necessary to have a function of adjusting the height of the light receiving surface 7F. Although it is desirable, if the height of the light receiving surface 7F is adjusted too much, the transfer substrate 2 will be pushed up, so that an observation different from the in-plane distribution of the laser light intensity of the processed surface in the LLO method will be observed. Will end up. Further, when the transfer substrate 2 has the adhesive layer 21, there is also an adverse effect that the light receiving surface 7F is in close contact with the transfer substrate lower surface 2F and is difficult to peel off. Specifically, since a part of the adhesive layer 21 may adhere to the light receiving surface 7F, it becomes impossible to optimize the in-plane distribution of the laser light intensity on the lower surface 2F of the transfer substrate with high frequency.
　このように、図２（ａ）の状態での、ビームプロファイラ７による観察は加工面高さのレーザー光強度の面内分布を直接知ることができるという長所がある反面、作業性等において問題もある。そこで、作業性も考慮したのが図２（ｂ）の状態である。図２（ｂ）が図２（ａ）と異なるのはビームプロファイラ７の受光面７Ｆの高さであり、受光面７Ｆは転写基板下面２Ｆより下にある。すなわち、転写基板下面２Ｆと受光面７Ｆは密着していない。 As described above, the observation by the beam profiler 7 in the state of FIG. 2A has an advantage that the in-plane distribution of the laser beam intensity of the machined surface height can be directly known, but there is also a problem in workability and the like. is there. Therefore, the state shown in FIG. 2B also considers workability. FIG. 2B differs from FIG. 2A in the height of the light receiving surface 7F of the beam profiler 7, and the light receiving surface 7F is below the lower surface 2F of the transfer substrate. That is, the lower surface 2F of the transfer substrate and the light receiving surface 7F are not in close contact with each other.
　図２（ｂ）のような受光面７Ｆの高さでは、当然ながら、ビームプロファイラ７によって得られるレーザー光強度の面内分布は転写基板下面２Ｆのものではない。しかし、転写基板２の屈折率が既知であれば、受光面７Ｆ高さ（転写基板２Ｆと受光面７Ｆの間隔）に応じて、受光面７Ｆが転写基板下面２Ｆから離れていても、受光面７Ｆのレーザー光強度の面内分布から、転写基板下面２Ｆのレーザー光強度の面内分布を推定出来ることが判った。その一例を示したのが図３である。図３は、転写基板下面２Ｆと受光面７Ｆの間隔を所定の値に設定したもので、転写基板下面２Ｆのレーザー光強度分布がビームプロファイルＡであるとき、受光面７Ｆのレーザー光強度分布がビームプロファイルＢとなる例を示したものである。すなわち、図３に示した例においては、受光面７Ｆのレーザー光強度を 図１４に示した強度分布Ｂのよう（ガウシアン分布）にするように集光レンズ５の高さを調整することで、（転写基板下面２Ｆのレーザー光強度分布がトップハット分布となって）ＬＬＯ法で良好な転写品質が得られる。 At the height of the light receiving surface 7F as shown in FIG. 2B, the in-plane distribution of the laser light intensity obtained by the beam profiler 7 is, of course, not that of the lower surface 2F of the transfer substrate. However, if the refractive index of the transfer substrate 2 is known, even if the light receiving surface 7F is separated from the transfer substrate lower surface 2F, depending on the height of the light receiving surface 7F (distance between the transfer substrate 2F and the light receiving surface 7F), the light receiving surface It was found that the in-plane distribution of the laser light intensity on the lower surface of the transfer substrate 2F can be estimated from the in-plane distribution of the laser light intensity on the 7th floor. An example of this is shown in FIG. In FIG. 3, the distance between the lower surface 2F of the transfer substrate and the light receiving surface 7F is set to a predetermined value, and when the laser light intensity distribution of the lower surface 2F of the transfer board is the beam profile A, the laser light intensity distribution of the light receiving surface 7F is An example of the beam profile B is shown. That is, in the example shown in FIG. 3, the height of the condenser lens 5 is adjusted so that the laser light intensity of the light receiving surface 7F is as shown in the intensity distribution B (Gaussian distribution) shown in FIG. Good transfer quality can be obtained by the LLO method (the laser light intensity distribution on the lower surface 2F of the transfer substrate becomes the top hat distribution).
　集光レンズの高さ調整装置としては、図３のように、受光面７Ｆのレーザー光強度分布と転写基板下面２Ｆのレーザー光強度分布の関係を、転写基板下面２Ｆと受光面７Ｆの間隔に応じてデータベース化して制御部８に記録しておくことが望ましい。データベース化をすることにより、制御部８が集光レンズ駆動部５１により集光レンズ５の高さ位置を変えながらビームプロファイラ７により受光面７Ｆのレーザー光強度の面内分布を観察することで、転写基板下面２Ｆで適正な強度分布が得られる集光レンズ５の高さを知ることができる。 As a height adjusting device for the condenser lens, as shown in FIG. 3, the relationship between the laser light intensity distribution on the light receiving surface 7F and the laser light intensity distribution on the transfer substrate lower surface 2F is set to the distance between the transfer substrate lower surface 2F and the light receiving surface 7F. It is desirable to create a database accordingly and record it in the control unit 8. By creating a database, the control unit 8 observes the in-plane distribution of the laser light intensity of the light receiving surface 7F with the beam profiler 7 while changing the height position of the condensing lens 5 with the condensing lens driving unit 51. It is possible to know the height of the condenser lens 5 from which an appropriate intensity distribution can be obtained on the lower surface 2F of the transfer substrate.
　なお、データベース化は、受光面７Ｆのレーザー光強度分布と転写基板下面２Ｆのレーザー光強度分布の関係に限定されるものではない。すなわち、転写基板下面２Ｆと受光面７Ｆの間隔に応じて、実受光面７Ｆのレーザー光強度分布と、際にＬＬＯ法を行って確認した転写状態の関係をデータベース化しておいてもよい。 Note that the database creation is not limited to the relationship between the laser light intensity distribution on the light receiving surface 7F and the laser light intensity distribution on the lower surface 2F of the transfer substrate. That is, the relationship between the laser light intensity distribution of the actual light receiving surface 7F and the transfer state confirmed by performing the LLO method may be stored in a database according to the distance between the lower surface 2F of the transfer substrate and the light receiving surface 7F.
　このように、本発明の集光レンズの高さ調整装置を、レーザーリフトオフ装置に備えることにより、転写品質に優れたレーザーリフトオフ装置が得られる。 As described above, by equipping the laser lift-off device with the height adjusting device for the condenser lens of the present invention, a laser lift-off device having excellent transfer quality can be obtained.
　すなわち、図４（ａ）のように、転写基板下面２Ｆのレーザー光がチップ部品Ｃのチップサイズに応じた範囲でＬＬＯ法に適した強度となり、図４（ｂ）のように良好な転写が行える。 That is, as shown in FIG. 4 (a), the laser light on the lower surface 2F of the transfer substrate has an intensity suitable for the LLO method within a range corresponding to the chip size of the chip component C, and good transfer is performed as shown in FIG. 4 (b). You can.
　ところで、図４（ａ）のようにチップ部品Ｃのチップサイズに適した強度分布のテーザー光を照射する場合、転写すべきチップ部品Ｃに対してレーザー光照射位置を高精度に合わせる必要がある。すなわち、図５（ａ）のようにレーザー光Ｌの光軸ＬＣがチップ部品Ｃの中心ＣＣからズレていると、レーザー光強度の弱い部分（図におけるチップ右側）が剥離しない状態で、チップ部品Ｃの左側から剥離が生じるため、チップ部品Ｃを転写先基板Ｂに平行に転写することが出来なくなる。 By the way, when irradiating the taser light having an intensity distribution suitable for the chip size of the chip component C as shown in FIG. 4A, it is necessary to align the laser light irradiation position with respect to the chip component C to be transferred with high accuracy. .. That is, when the optical axis LC of the laser beam L is deviated from the center CC of the chip component C as shown in FIG. 5A, the chip component is in a state where the portion having weak laser light intensity (the right side of the chip in the figure) is not peeled off. Since peeling occurs from the left side of C, the chip component C cannot be transferred in parallel with the transfer destination substrate B.
　このような現象を回避するために、図１４の強度分布Ｄ（トップハット分布）のレーザー照射範囲を広げれば個々のチップ部品Ｃの全面分の範囲に適正強度のレーザー光を照射することが可能となる。しかし、このようにレーザー照射範囲を広げるためには、レーザー光源４を高出力する必要があり、装置の大型化やコストアップにつながる。さらに、レーザー光の照射範囲が広いと転写対象のチップ部品Ｃに隣接するチップ部品Ｃを部分的に剥離することにもなり、好ましくない。 In order to avoid such a phenomenon, if the laser irradiation range of the intensity distribution D (top hat distribution) in FIG. 14 is widened, it is possible to irradiate the entire surface of each chip component C with laser light of appropriate intensity. It becomes. However, in order to widen the laser irradiation range in this way, it is necessary to output the laser light source 4 at a high output, which leads to an increase in size and cost of the apparatus. Further, if the irradiation range of the laser beam is wide, the chip component C adjacent to the chip component C to be transferred may be partially peeled off, which is not preferable.
　ところが、このような問題点が生じるようなケースにおいても、転写基板下面２Ｆのレーザー光強度分布の制御が可能という特徴を活かした実施形態変形例として改善することが可能である。 However, even in the case where such a problem occurs, it is possible to improve it as an embodiment modification utilizing the feature that the laser light intensity distribution on the lower surface 2F of the transfer substrate can be controlled.
　図６は本発明の実施形態変形例におけるチップ転写装置であるレーザーリフトオフ装置１０１の概略構成を示す図である。 FIG. 6 is a diagram showing a schematic configuration of a laser lift-off device 101, which is a chip transfer device in a modified example of the embodiment of the present invention.
　レーザーリフトオフ装置１０１は、転写基板２に高密度に配置されたチップ部品Cを転写先基板Ｂの所定位置に転写するものである。図６において転写基板２はベース２０に粘着層２１を積層した構成となっている。 The laser lift-off device 101 transfers the chip component C, which is densely arranged on the transfer substrate 2, to a predetermined position on the transfer destination substrate B. In FIG. 6, the transfer substrate 2 has an adhesive layer 21 laminated on the base 20.
　レーザーリフトオフ装置１０１は、ステージ３、レーザー光源４、集光レンズ５、集光レンズ駆動部５１、転写基板保持手段６、および制御部８を構成要素としている。 The laser lift-off device 101 includes a stage 3, a laser light source 4, a condenser lens 5, a condenser lens driving unit 51, a transfer substrate holding means 6, and a control unit 8.
　ステージ３は、転写先基板Ｂを保持する機能を有しており、転写基板Ｂを面内方向に移動させる機能を有していることが望ましい。 It is desirable that the stage 3 has a function of holding the transfer destination substrate B and has a function of moving the transfer substrate B in the in-plane direction.
　レーザー光源４は転写基板２の粘着層２１に吸収され、粘着層２１が硬化（粘着力低下）ないしは分解してガスを発生させるような波長およびエネルギーを照射するための光源である。なお、レーザー光源４はレーザー発振器に限定されるものではなく、レーザー発振器から放射された光を導く光学系も含まれる。また、レーザー光源４がビームシェイパの機能を有していても良い。すなわち、レーザー発振器と、ガルバノ等のスキャン機能を有る光学系等の間に、レーザーのビームプロファイル（面内強度分布）が可変なビームシェイパを配置していても良い。 The laser light source 4 is a light source for irradiating a wavelength and energy such that the adhesive layer 21 is absorbed by the adhesive layer 21 of the transfer substrate 2 and the adhesive layer 21 is cured (decreased in adhesive strength) or decomposed to generate gas. The laser light source 4 is not limited to the laser oscillator, but also includes an optical system that guides the light emitted from the laser oscillator. Further, the laser light source 4 may have a function of a beam shaper. That is, a beam shaper having a variable laser beam profile (in-plane intensity distribution) may be arranged between the laser oscillator and an optical system having a scanning function such as galvano.
　集光手レンズは、レーザー光源４から発せられたレーザー光Ｌを集光するもので、球面収差を生じるものであれば、集光レンズ駆動部５１による粘着層２１に対する高さ調整により、粘着層２１面内のレーザー光強度分布を変化させることが出来る。 The condensing hand lens condenses the laser light L emitted from the laser light source 4, and if it causes spherical aberration, the adhesive layer is adjusted by adjusting the height of the condensing lens driving unit 51 with respect to the adhesive layer 21. The laser light intensity distribution within the 21 plane can be changed.
　転写基板保持手段６は転写基板２の周縁部を把持することで保持するものであり、転写基板２を面内方向に移動させて位置合わせする機能を保持していることが望ましい。また、転写基板２を上下方向に高さ調整する機能を有していてもよい。 The transfer board holding means 6 holds the peripheral portion of the transfer board 2 by gripping it, and it is desirable that the transfer board holding means 6 holds a function of moving the transfer board 2 in the in-plane direction and aligning the transfer board 2. Further, it may have a function of adjusting the height of the transfer substrate 2 in the vertical direction.
　制御部８は、ステージ３、レーザー光源４、転写基板６、集光レンズ駆動部５１と接続している。 The control unit 8 is connected to the stage 3, the laser light source 4, the transfer board 6, and the condenser lens drive unit 51.
　制御部８はステージ３と接続して、転写先基板Ｂの所定位置にチップ部品Ｃが転写できるようステージ３の位置制御を行う。 The control unit 8 is connected to the stage 3 and controls the position of the stage 3 so that the chip component C can be transferred to a predetermined position on the transfer destination substrate B.
　制御部８は、レーザー光源４による、レーザー光Ｌの照射タイミングを制御することが出来る。また、レーザー光源４がガルバノのような光学系も含む場合においては、レーザー光Ｌの転写基板２の面内方向へのスキャンを制御することが出来いる。 The control unit 8 can control the irradiation timing of the laser light L by the laser light source 4. Further, when the laser light source 4 includes an optical system such as a galvano, it is possible to control scanning of the laser beam L in the in-plane direction of the transfer substrate 2.
　制御部８は転写基板保持手段６と接続して、転写基板２の面内方向位置を制御することが出来る。 The control unit 8 can be connected to the transfer board holding means 6 to control the in-plane position of the transfer board 2.
　制御部８は集光レンズ駆動部５１と接続して、集光レンズ５の状態を制御する機能を有している。この機能により、転写基板２の粘着層２１に照射されるレーザー光の強度分布を変化させることが可能である。このため、図６の左上に記したように、粘着層２１に照射されるレーザー光の強度分布をチップ部品ＣのサイズＣＷに対して、外周部近傍で高強度となるような（プロファイルとしてはドーナッツ状に高強度域を有する）分布と、中心部付近で強くなるトップハット分布とを切り替えるようにすることも可能である。なお、粘着層２１に照射されるレーザー光の強度分布の切り替えはこれに限定されるものではなく、例えば、トップハット分布の代わりにガウシアン分布が適用可能な場合もある。 The control unit 8 has a function of connecting to the condenser lens driving unit 51 to control the state of the condenser lens 5. With this function, it is possible to change the intensity distribution of the laser beam applied to the adhesive layer 21 of the transfer substrate 2. Therefore, as shown in the upper left of FIG. 6, the intensity distribution of the laser beam applied to the adhesive layer 21 becomes high in the vicinity of the outer peripheral portion with respect to the size CW of the chip component C (as a profile). It is also possible to switch between a donut-like high-intensity region) distribution and a top hat distribution that becomes stronger near the center. The switching of the intensity distribution of the laser beam applied to the adhesive layer 21 is not limited to this, and for example, a Gaussian distribution may be applied instead of the top hat distribution.
　以下、図６に示したレーザーリフトオフ装置１で、粘着層を介して転写基板に配置されたチップ部品を転写先基板に転写する工程について、図７および図８を用いて説明する。 Hereinafter, the process of transferring the chip components arranged on the transfer substrate to the transfer destination substrate via the adhesive layer by the laser lift-off device 1 shown in FIG. 6 will be described with reference to FIGS. 7 and 8.
　図７は、レーザーリフトオフ装置１で、チップ部品Ｃを転写基板２から剥離しないものの、チップ部品Ｃの外周部近傍において粘着層２１の粘着力を低減（ないしは粘着層２１を剥離）するようにレーザー光を照射する予備照射工程を説明するものである。 FIG. 7 shows a laser lift-off device 1, which does not peel off the chip component C from the transfer substrate 2, but reduces the adhesive force of the adhesive layer 21 (or peels off the adhesive layer 21) in the vicinity of the outer peripheral portion of the chip component C. The pre-irradiation step of irradiating light will be described.
　なお、以下の説明において、転写基板２の粘着層２１に照射するレーザー光の強度分布の切替に際して、集光手段５を駆動する例について説明しているが、レーザー光源４がビームシェイパの機能を有するものであればビームシェイパの状態を変化させて同様な切替を行うことも可能である。 In the following description, an example of driving the condensing means 5 when switching the intensity distribution of the laser light irradiating the adhesive layer 21 of the transfer substrate 2 will be described, but the laser light source 4 has a beam shaper function. If it is, it is possible to change the state of the beam shaper and perform the same switching.
　図７（ａ）において、転写基板２の粘着層２１に照射するレーザー光の強度分布をチップ部品ＣのサイズＣＷに対して、外周部近傍で高く中心部で弱くしている。このような強度分布のレーザー光を受けることにより、粘着層２１の粘着力はチップ部品Ｃの中心付近で維持されているが、外周部近傍では図７（ｂ）に示すように低粘着部２１Ｖとなる。ここで、低粘着部２１Ｖは粘着力が低下しているのみならず、チップ部品Ｃあるいはベース２０から剥離している状態も含む。 In FIG. 7A, the intensity distribution of the laser beam irradiating the adhesive layer 21 of the transfer substrate 2 is higher in the vicinity of the outer peripheral portion and weaker in the central portion with respect to the size CW of the chip component C. By receiving the laser beam having such an intensity distribution, the adhesive strength of the adhesive layer 21 is maintained near the center of the chip component C, but in the vicinity of the outer peripheral portion, as shown in FIG. 7B, the low adhesive portion 21V It becomes. Here, the low adhesive portion 21V includes not only a reduced adhesive force but also a state of being peeled off from the chip component C or the base 20.
　レーザー光の予備照射後は、図７（ｂ）に示したように、チップ部品Ｃの中心部付近で粘着層２１の粘着力は高いためチップ部品Ｃは転写基板２に配置された状態を維持しているが、チップ部品Ｃの外周部近傍では剥離しやすい状態となっている。 After the pre-irradiation of the laser beam, as shown in FIG. 7B, the adhesive force of the adhesive layer 21 is high near the center of the chip component C, so that the chip component C is maintained in the state of being arranged on the transfer substrate 2. However, the chip component C is in a state of being easily peeled off in the vicinity of the outer peripheral portion.
　そこで、図８（ａ）のようにチップ部品Ｃより小さめの領域でトップハット分布を有するレーザー光を、本照射として粘着層２１に照射することで、チップ部品Ｃは転写基板２から容易に剥離し、平行状態を維持して転写先基板Ｂに転写される（図８（ｂ））。ここで、レーザー光の強度がトップハット分布ではなくガウシアン分布でもチップ部品Ｃを転写先基板Ｂに転写するが可能性を有する。また、予備照射により、チップ部品Ｃの外周部近傍において粘着層２１の粘着力が弱いことから、本照射においてレーザー光の光軸がチップ部品Ｃの中心から少々ズレていたとしても、チップ部品Ｃを転写先基板Ｂに平行度を維持して転写することが可能である。 Therefore, by irradiating the adhesive layer 21 with a laser beam having a top hat distribution in a region smaller than the chip component C as shown in FIG. 8A as the main irradiation, the chip component C can be easily peeled from the transfer substrate 2. Then, it is transferred to the transfer destination substrate B while maintaining the parallel state (FIG. 8 (b)). Here, there is a possibility that the chip component C can be transferred to the transfer destination substrate B even if the intensity of the laser light is not the top hat distribution but the Gaussian distribution. Further, since the adhesive force of the adhesive layer 21 is weak in the vicinity of the outer peripheral portion of the chip component C due to the preliminary irradiation, even if the optical axis of the laser beam is slightly deviated from the center of the chip component C in the main irradiation, the chip component C Can be transferred to the transfer destination substrate B while maintaining parallelism.
　以上のように、図７（ａ）のような予備照射と、図８（ａ）のような本照射を組み合わせることで、粘着層を介して転写基板に配置されたチップ部品を転写先基板に転写するのに際して、適正な位置に転写することが可能となる。すなわち転写品質に優れた転写が可能になる。 As described above, by combining the pre-irradiation as shown in FIG. 7A and the main irradiation as shown in FIG. 8A, the chip components arranged on the transfer substrate via the adhesive layer are transferred to the transfer destination substrate. When transferring, it becomes possible to transfer to an appropriate position. That is, transfer with excellent transfer quality becomes possible.
　ところで、転写基板２に配置された多数のチップ部品Ｃを転写先基板Ｂに転写するのに際して、個々のチップ部品Ｃ毎に予備照射と本照射を行うことは、集光手段駆動部５１により頻繁に集光手段５の状態を切替える必要があり、集光手段駆動部５１に対する負荷が増し、切替えに要する時間的ロスも生じる。 By the way, when transferring a large number of chip components C arranged on the transfer substrate 2 to the transfer destination substrate B, pre-irradiation and main irradiation for each individual chip component C are frequently performed by the condensing means driving unit 51. It is necessary to switch the state of the condensing means 5, the load on the condensing means driving unit 51 increases, and the time loss required for switching also occurs.
　そこで、ガルバノのような光学系でレーザー光を（転写基板２の面内方向に）スキャンできるのであれば、転写基板２に配置された全てのチップ部品Ｃの位置で予備照射を行ってから、個々のチップ部品の位置での本照射により転写先基板Ｂにチップ部品Ｃを転写するのが好ましい。 Therefore, if the laser beam can be scanned (in the in-plane direction of the transfer substrate 2) by an optical system such as galvano, pre-irradiation is performed at the positions of all the chip components C arranged on the transfer substrate 2, and then the pre-irradiation is performed. It is preferable to transfer the chip component C to the transfer destination substrate B by the main irradiation at the position of each chip component.
　この例を示したのが図９および図１０であり、転写基板２におけるチップ部品Ｃの面内配置を用いて説明するものである。 Examples of this are shown in FIGS. 9 and 10, which will be described using the in-plane arrangement of the chip component C on the transfer substrate 2.
　まず、図９（ａ）は転写基板２に粘着剤２１を介して配列したチップ部品Ｃを示すものであり、この配列の右上のチップ部品Ｃを中心に予備照射を行っている状態を示すのが図９（ｂ）である。図９（ｂ）において予備照射の面内強度の高い領域を示したのが予備照射部ＬＰ２１Ｐであり、予備照射により低粘着部２１Ｖがチップ部品Ｃの外周部近傍に生じる（図９（ｃ））。図９（ｃ）では、予備照射により低粘着部が形成されているのを示すとともに、隣接するチップ部品Cを中心に予備照射を行っている状態を示している。すなわち、予備照射によって低粘着部２１Ｖが生じたチップ部品Ｃに、直後に本照射をするのではなく、チップ部品Ｃ配列に応じて、転写基板２に予備照射を順次行っていく（図９（ｄ））。 First, FIG. 9A shows a chip component C arranged on the transfer substrate 2 via an adhesive 21, and shows a state in which pre-irradiation is performed centering on the chip component C on the upper right of this arrangement. Is shown in FIG. 9 (b). In FIG. 9B, the region of high in-plane intensity of the pre-irradiation is shown in the pre-irradiation portion LP21P, and the low-adhesion portion 21V is generated in the vicinity of the outer peripheral portion of the chip component C by the pre-irradiation (FIG. 9 (c)). ). FIG. 9C shows that the low-adhesive portion is formed by the pre-irradiation, and shows the state in which the pre-irradiation is performed centering on the adjacent chip component C. That is, instead of directly irradiating the chip component C in which the low adhesive portion 21V is generated by the pre-irradiation, the transfer substrate 2 is sequentially pre-irradiated according to the arrangement of the chip component C (FIG. 9 (FIG. 9). d)).
　このようにして、転写基板Ｂの（不良品等を除く）転写対象のチップ部品Ｃの配置位置に応じた予備照射が完了した状態を例示したのが図１０（ａ）である。図１０（ａ）では、転写基板２に配置されたチップ部品Ｃの個々の配置位置に応じて、粘着層２１に低粘着部２１Ｖがチップ部品Ｃの外周部近傍に形成されている。 FIG. 10A illustrates a state in which pre-irradiation according to the arrangement position of the chip component C to be transferred (excluding defective products) of the transfer substrate B is completed in this way. In FIG. 10A, a low adhesive portion 21V is formed on the adhesive layer 21 in the vicinity of the outer peripheral portion of the chip component C according to the individual arrangement positions of the chip components C arranged on the transfer substrate 2.
　図１０（ａ）の状態で、個々のチップ部品Ｃは中心付近で粘着力を維持した粘着層２１により転写基板２に付着した状態であるが、外周部近傍の粘着層２１は予備照射により低粘着部２１Ｖになっている。 In the state of FIG. 10A, each chip component C is in a state of being attached to the transfer substrate 2 by the adhesive layer 21 that maintains the adhesive strength near the center, but the adhesive layer 21 near the outer peripheral portion is low due to pre-irradiation. The adhesive portion is 21V.
　このため、本照射ではチップ部品Ｃの外周部近傍の光強度が低くても、チップ部品Ｃを剥離することができる。すなわち、図１０（ｂ）のようにチップ部品Ｃの中心付近に光強度が高い本照射部ＬＰ２１Ｌを設けることで、図１０（ｃ）のようにチップ部品Ｃの中心付近も低粘着部２１Ｖとなり、チップ部品Ｃは剥離して転写先基板Ｂに転写される。以後、図１０（ｄ）のように転写基板２に配置されたチップ部品Ｃ（の粘着層２１）に本照射を行って、転写先基板Ｂの所定位置にチップ部品Ｃを順次転写する。 Therefore, in this irradiation, the chip component C can be peeled off even if the light intensity near the outer peripheral portion of the chip component C is low. That is, by providing the main irradiation portion LP21L having a high light intensity near the center of the chip component C as shown in FIG. 10 (b), the low adhesive portion 21V is also provided near the center of the chip component C as shown in FIG. 10 (c). , The chip component C is peeled off and transferred to the transfer destination substrate B. After that, the chip component C (adhesive layer 21) arranged on the transfer substrate 2 is subjected to the main irradiation as shown in FIG. 10D, and the chip component C is sequentially transferred to a predetermined position on the transfer destination substrate B.
　なお、レーザー光の照射面形状について、図９および図１０では丸いものとしているが、これに限定されるものではない。ビームシェイパが照射面形状を変更する機能を有しているなら、図１１のようにチップ形状に合わせた四角形状等にすることも可能である。 Note that the shape of the laser beam irradiation surface is round in FIGS. 9 and 10, but the shape is not limited to this. If the beam shaper has a function of changing the shape of the irradiation surface, it can be made into a quadrangular shape or the like matching the chip shape as shown in FIG.
　ところで、図１の装置構成においては加工面のレーザー光強度分布を適正化するために集光レンズの高さ調整が必要であるが、図６の装置構成ようにレーザー光学系にビームシェイパを備えた場合にはビームシェイパの機能を利用して加工面のレーザー光強度分布を適正化することも可能である。 By the way, in the device configuration of FIG. 1, it is necessary to adjust the height of the condenser lens in order to optimize the laser light intensity distribution on the processed surface. However, as in the device configuration of FIG. 6, the laser optical system is provided with a beam shaper. In some cases, it is possible to optimize the laser light intensity distribution on the machined surface by using the function of the beam shaper.
　　　１　　　レーザーリフトオフ装置（チップ転写装置）
　　　２　　　転写基板
　　　２Ｆ　　転写基板下面（加工面）
　　　３　　　ステージ
　　　４　　　レーザー光源
　　　５　　　集光レンズ
　　　６　　　転写基板保持手段
　　　７　　　ビームプロファイラ
　　　７Ｆ　　受光面
　　　８　　　制御部
　　２０　　　ベース
　　２１　　　粘着層
　　５１　　　集光レンズ駆動部
　　Ｂ　　　転写先基板
　　Ｃ　　　チップ部品　
　　ＣＷ　　チップサイズ
　　Ｈ２Ｆ　転写基板下面高さ
　　Ｌ　　　レーザー光 1 Laser lift-off device (chip transfer device)
2 Transfer board 2F Transfer board lower surface (processed surface)
3 Stage 4 Laser light source 5 Condensing lens 6 Transfer substrate holding means 7 Beam profiler 7F Light receiving surface 8 Control unit 20 Base 21 Adhesive layer 51 Condensing lens drive unit B Transfer destination substrate C Chip parts
CW chip size H2F Transfer substrate bottom surface height L Laser light

Claims (8)

  1. 複数のチップ部品を下面に配置した転写基板の、前記チップ部品と前記転写基板の界面である加工面に、前記転写基板越しにレーザー光を照射して、
    前記チップ部品を剥離して、前記チップ部品と対向する転写先基板の上面に転写するレーザーリフトオフ転写法において、
    レーザー光源と前記転写基板の間に配置され、上下移動可能な集光レンズの高さを調整して、前記加工面の面内におけるレーザー光の強度分布を適正化する、集光レンズの高さ調整方法であって、
    前記転写基板の下側に、上向きの受光面を有し、レーザー光の強度分布を測定するビームプロファイラを配置し、
    前記転写基板越しに、前記チップ部品が配置されていない位置で、レーザー光の強度分布を測定して、
    前記集光レンズの高さを調整する集光レンズの高さ調整方法。     The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light through the transfer substrate.
    In the laser lift-off transfer method in which the chip component is peeled off and transferred to the upper surface of the transfer destination substrate facing the chip component.
    The height of the condenser lens, which is arranged between the laser light source and the transfer substrate and adjusts the height of the condenser lens that can move up and down to optimize the intensity distribution of the laser light in the plane of the machined surface. It ’s an adjustment method,
    A beam profiler having an upward light receiving surface and measuring the intensity distribution of the laser beam is arranged under the transfer substrate.
    The intensity distribution of the laser beam is measured at a position where the chip component is not arranged through the transfer substrate.
    A method for adjusting the height of a condenser lens for adjusting the height of the condenser lens.
  2. 請求項１に記載の集光レンズの高さ調整方法であって、
    前記受光面を前記転写基板下面に密着させて行う集光レンズの高さ調整方法。     The method for adjusting the height of a condenser lens according to claim 1.
    A method for adjusting the height of a condenser lens, in which the light receiving surface is brought into close contact with the lower surface of the transfer substrate.
  3. 請求項１に記載の集光レンズの高さ調整方法であって、
    前記受光面が前記転写基板下面より下にある集光レンズの高さ調整方法。     The method for adjusting the height of a condenser lens according to claim 1.
    A method for adjusting the height of a condenser lens whose light receiving surface is below the lower surface of the transfer substrate.
  4. 請求項３に記載の集光レンズの高さ調整方法であって、前記転写基板の屈折率が既知の場合、
    前記受光面と前記転写基板下面の間隔に応じて、前記転写基板下面におけるレーザの強度分布を前記受光面のレーザーの強度分布から推定する集光レンズの高さ調整方法。     The method for adjusting the height of the condenser lens according to claim 3, wherein the refractive index of the transfer substrate is known.
    A method for adjusting the height of a condenser lens, in which the intensity distribution of a laser on the lower surface of the transfer substrate is estimated from the intensity distribution of the laser on the light receiving surface according to the distance between the light receiving surface and the lower surface of the transfer substrate.
  5. 複数のチップ部品が粘着層を介して配置されている転写基板の前記粘着層に、
    前記転写基板越しにレーザー光を照射して、
    前記チップ部品を選択的に転写先基板に転写するチップ転写方法であって、
    前記チップ部品の外周部近傍の粘着層の粘着力が低下するように、ドーナッツ状の高強度域を有する強度分布のレーザー光を照射する予備照射と、
    前記予備照射工程を経た前記チップ部品と前記転写基板の間の粘着層に、トップハット分布またはガウシアン分布の強度分布を有するレーザー光を照射して、前記チップ部品を前記転写基板から剥離して前記転写先基板に転写する本照射とを行うチップ転写方法。     On the adhesive layer of the transfer substrate in which a plurality of chip components are arranged via the adhesive layer,
    By irradiating the transfer substrate with laser light,
    A chip transfer method for selectively transferring the chip components to a transfer destination substrate.
    Preliminary irradiation that irradiates a laser beam with an intensity distribution having a high intensity region like donuts so that the adhesive strength of the adhesive layer near the outer peripheral portion of the chip component is reduced.
    The adhesive layer between the chip component and the transfer substrate that has undergone the pre-irradiation step is irradiated with laser light having an intensity distribution of a top hat distribution or a Gaussian distribution, and the chip component is peeled off from the transfer substrate. A chip transfer method in which main irradiation is performed to transfer to a transfer destination substrate.
  6. 複数のチップ部品を下面に配置した転写基板の、前記チップ部品と前記転写基板の界面である加工面に、前記転写基板越しにレーザー光を照射して、
    前記チップ部品を剥離して、前記チップ部品と対向する転写先基板の上面に転写するチップ転写装置において、
    レーザー光源と前記転写基板の間に配置され、上下移動可能な集光レンズの高さを調整して、前記加工面の面内におけるレーザー光の強度分布を適正化する、集光レンズの高さ調整装置であって、
    前記集光レンズを上下に駆動する集光レンズ駆動部と、
    前記転写基板下面より下に、上向きの受光面を有するように配置した、レーザー光の強度分布を測定するビームプロファイラと、
    前記集光レンズ駆動部および前記ビームプロファイラに接続した、制御部を備え、
    前記制御部が、前記集光レンズの高さ位置を変えながら、前記受光面のレーザーの強度分布を取得する機能を有する集光レンズの高さ調整装置。     The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light through the transfer substrate.
    In a chip transfer device that peels off the chip component and transfers it to the upper surface of the transfer destination substrate facing the chip component.
    The height of the condenser lens, which is arranged between the laser light source and the transfer substrate and adjusts the height of the condenser lens that can move up and down to optimize the intensity distribution of the laser light in the plane of the machined surface. It ’s an adjustment device,
    A condenser lens driving unit that drives the condenser lens up and down,
    A beam profiler for measuring the intensity distribution of laser light, which is arranged so as to have an upward light receiving surface below the lower surface of the transfer substrate,
    A control unit connected to the condenser lens drive unit and the beam profiler is provided.
    A height adjusting device for a condenser lens, wherein the control unit has a function of acquiring a laser intensity distribution on the light receiving surface while changing the height position of the condenser lens.
  7. 複数のチップ部品を下面に配置した転写基板の、前記チップ部品と前記転写基板の界面である加工面に、前記転写基板越しに上からレーザー光を照射して、
    前記チップ部品を剥離して、前記チップ部品と対向する転写先基板の上面に転写するチップ転写装置であって、
    請求項６に記載の集光レンズの高さ調整装置を備えたチップ転写転写装置。     The processed surface of the transfer substrate on which a plurality of chip components are arranged on the lower surface, which is the interface between the chip components and the transfer substrate, is irradiated with laser light from above through the transfer substrate.
    A chip transfer device that peels off the chip component and transfers it to the upper surface of the transfer destination substrate facing the chip component.
    A chip transfer transfer device including the height adjusting device for a condenser lens according to claim 6.
  8. 複数のチップ部品が粘着層を介して配置されている転写基板の前記粘着層に、
    前記転写基板越しにレーザー光を照射して、
    前記チップ部品を選択的に転写先基板に転写するチップ転写装置であって、
    前記粘着層でレーザーアブレーションを起こし得る波長のレーザー発振器と、
    前記レーザー発振器と前記転写基板の間に配置され、レーザー光を集光する集光手段と、
    前記レーザー発振器の前記集光手段の間に配置されたビームシェイパとを備え、
    前記ビームシェイパの状態を変化させ、前記粘着層に照射するレーザー光の強度分布を、リング状の高強度域を有する形状と、ガウス形状またはトップハット形状に切り替えることができるチップ転写装置     On the adhesive layer of the transfer substrate in which a plurality of chip components are arranged via the adhesive layer,
    By irradiating the transfer substrate with laser light,
    A chip transfer device that selectively transfers the chip components to a transfer destination substrate.
    A laser oscillator with a wavelength that can cause laser ablation in the adhesive layer,
    A condensing means arranged between the laser oscillator and the transfer substrate to condense the laser light,
    A beam shaper arranged between the condensing means of the laser oscillator is provided.
    A chip transfer device capable of changing the state of the beam shaper and switching the intensity distribution of the laser beam irradiating the adhesive layer between a ring-shaped high-intensity region shape and a gauss-shaped or top hat shape.
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WO2023095672A1 (en) * 2021-11-26 2023-06-01 信越エンジニアリング株式会社 Laser lift-off method, method for manufacturing receptor substrate, laser lift-off device, and photomask
WO2023190595A1 (en) * 2022-03-30 2023-10-05 東レエンジニアリング株式会社 Transfer method and transfer device

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