WO2018155305A1 - 弾性表面波素子 - Google Patents
弾性表面波素子 Download PDFInfo
- Publication number
- WO2018155305A1 WO2018155305A1 PCT/JP2018/005286 JP2018005286W WO2018155305A1 WO 2018155305 A1 WO2018155305 A1 WO 2018155305A1 JP 2018005286 W JP2018005286 W JP 2018005286W WO 2018155305 A1 WO2018155305 A1 WO 2018155305A1
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- WIPO (PCT)
- Prior art keywords
- acoustic wave
- surface acoustic
- dielectric layer
- substrate
- wave element
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02614—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves
- H03H9/02629—Treatment of substrates, e.g. curved, spherical, cylindrical substrates ensuring closed round-about circuits for the acoustical waves of the edges
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02818—Means for compensation or elimination of undesirable effects
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
Definitions
- the present invention relates to a surface acoustic wave element having an IDT (InterDigital Transducer) electrode.
- IDT InterDigital Transducer
- a surface acoustic wave element using an elastic wave is widely used for a band-pass filter or the like disposed in a front end portion of a mobile communication device.
- a dielectric layer made of aluminum oxide is provided on a 30 ° Y-cut X-propagation lithium niobate substrate, and an IDT electrode is provided on the dielectric layer.
- the configuration is known (see, for example, Patent Document 1).
- the thickness and material of the dielectric layer are appropriately selected to adjust the electromechanical coupling coefficient, and the ratio band ((anti-resonance frequency ⁇ resonance frequency) / resonance frequency ⁇ 100) Can be decided.
- the ratio band ((anti-resonance frequency ⁇ resonance frequency) / resonance frequency ⁇ 100)
- an object of the present invention is to suppress variation in the specific band of the surface acoustic wave element.
- a surface acoustic wave device includes a substrate including a LiNbO 3 piezoelectric single crystal, a first dielectric layer provided on the substrate, and the first dielectric. And an IDT electrode provided on the layer, and uses the Rayleigh wave to propagate the high-frequency signal on the substrate.
- a region having a large amplitude during signal propagation is located away from the substrate and the first dielectric layer. Even when the thickness variation of the layers occurs, the variation in the ratio band of the surface acoustic wave element can be suppressed.
- the Y cut angle of the LiNbO 3 piezoelectric single crystal may be not less than 100 ° and not more than 160 °.
- the electromechanical coupling coefficient increases in the range of the Y cut angle, and the surface acoustic wave element utilizes the Rayleigh wave to generate a high frequency signal.
- the structure is easy to propagate. As a result, a region with a large amplitude during signal propagation is located away from the substrate and the first dielectric layer, and even when the thickness of the first dielectric layer varies during manufacturing, the surface acoustic wave Variations in the specific bandwidth of the element can be suppressed.
- the first dielectric layer may contain silicon oxide.
- the thickness variation of the first dielectric layer containing silicon oxide occurs at the time of manufacture, it is possible to suppress the variation in the specific band of the surface acoustic wave element.
- the surface acoustic wave element may include a second dielectric layer provided on the IDT electrode, and the first dielectric layer may be thinner than the second dielectric layer.
- the first dielectric layer which is a layer for adjusting the electromechanical coupling coefficient
- the second dielectric layer it is possible to reduce the thickness variation dimension of the first dielectric layer. it can. As a result, it is possible to suppress variation in the specific band in the plurality of surface acoustic wave elements after manufacture.
- the generation position of the maximum amplitude of vibration generated in the surface acoustic wave element may be present in the second dielectric layer.
- the generation position of the maximum amplitude at the time of signal propagation is located away from the substrate and the first dielectric layer. For this reason, even if the thickness of the first dielectric layer varies during manufacturing, variations in the ratio band of the surface acoustic wave element can be suppressed.
- FIG. 1 is a plan view and a cross-sectional view illustrating an outline of a surface acoustic wave device according to an embodiment.
- FIG. 2 is a cross-sectional view showing details of the substrate and the IDT electrode of the surface acoustic wave device according to the embodiment.
- FIG. 3 is a cross-sectional view showing details of the substrate and the IDT electrode of the surface acoustic wave element in the comparative example.
- 4A and 4B are diagrams showing the vibration distribution of the cross section of the surface acoustic wave element, where FIG. 4A shows the vibration distribution when the Rayleigh wave is generated (embodiment), and FIG. 4B shows the Love wave generated. Is a vibration distribution (comparative example).
- the surface acoustic wave element is used, for example, as an element constituting a surface acoustic wave filter that filters and outputs an input high-frequency signal.
- FIG. 1 is a plan view and a cross-sectional view schematically showing a surface acoustic wave element 10 according to an embodiment.
- FIG. 2 is a cross-sectional view showing details of the substrate 101 and the IDT electrode 121 of the surface acoustic wave element 10.
- the direction in which the surface acoustic wave propagates is the T direction
- the direction perpendicular to the main surface 101a is the V direction
- the direction perpendicular to both the T direction and the V direction is the H direction.
- the surface acoustic wave element 10 includes a substrate 101, a first dielectric layer 122 provided on the substrate 101, an IDT electrode 121 provided on the first dielectric layer 122, Two dielectric layers 103 and a protective layer 104 are provided.
- the surface acoustic wave device 10 according to the present embodiment propagates a high-frequency signal on the substrate 101 using Rayleigh waves generated on the substrate 101 when a high-frequency signal is input to the IDT electrode 121.
- the substrate 101 includes, for example, a 127.5 ° Y-cut X-propagating LiNbO 3 piezoelectric single crystal and has a structure for propagating high-frequency signals using Rayleigh waves.
- the Y cut angle of the LiNbO 3 piezoelectric single crystal may be a predetermined Y cut angle of at least 100 ° to 160 °.
- the Y cut angle of the LiNbO 3 piezoelectric single crystal may be a predetermined Y cut angle of 120 ° to 130 °.
- the substrate 101 may be a substrate having piezoelectricity at least in part.
- a piezoelectric thin film piezoelectric body
- the piezoelectric thin film may have a sound velocity different from that of the piezoelectric thin film and a laminated body such as a support substrate.
- the substrate 101 may have piezoelectricity over the entire substrate.
- the substrate 101 is a piezoelectric substrate composed of a single piezoelectric layer.
- the IDT electrode 121 is composed of a pair of comb electrodes 121a and 121b facing each other.
- Each of the comb-shaped electrodes 121a and 121b includes a plurality of electrode fingers that are parallel to each other and a bus bar electrode that connects the plurality of electrode fingers.
- the plurality of electrode fingers are formed along the H direction orthogonal to the T direction.
- the wavelength of the excited acoustic wave is defined by design parameters such as the repetition period ⁇ and the duty ratio W / (W + S) of the plurality of electrode fingers.
- the IDT electrode 121 is formed by laminating a metal film 211, a metal film 212, a metal film 213, a metal film 214, and a metal film 215 in this order from the substrate 101 side.
- the metal film 211 is an adhesion film for improving adhesion with the substrate 101, and is formed of, for example, a NiCr material having a thickness of 10 nm.
- the metal film 212 is a main electrode for confining elastic wave energy, and is formed of, for example, a Pt material having a thickness of 40 nm.
- the metal film 213 is a barrier film that suppresses mutual diffusion between the metal film 212 and the metal film 214, and is formed of, for example, a Ti material having a thickness of 10 nm.
- the metal film 214 is a conductive film for improving the conductivity of the electrode finger, and is formed of, for example, an AlCu alloy material that is a material having a thickness of 159 nm and a small resistance value.
- the metal film 215 is an adhesion film for improving adhesion with the second dielectric layer 103, and is formed of, for example, a Ti material having a thickness of 10 nm.
- the metal film 212 made of Pt is the metal film having the highest density among the plurality of metal films 211 to 215 constituting the stacked body. Further, the metal films 211, 213, 214, and 215 constitute a metal film other than the metal film 212 having the highest density.
- the first dielectric layer 122 is a layer formed between the substrate 101 and the IDT electrode 121 for adjusting the electromechanical coupling coefficient.
- the first dielectric layer 122 is, for example, a silicon oxide layer having a thickness of 1 nm, and is formed by sputtering.
- the second dielectric layer 103 is a layer that improves frequency temperature characteristics and protects the IDT electrode 121 from the external environment.
- the second dielectric layer 103 is a silicon oxide layer having a thickness of 30 nm, for example, and is provided on the first dielectric layer 122 so as to cover the IDT electrode 121.
- the first dielectric layer 122 is thinner than the second dielectric layer 103.
- the thickness of the first dielectric layer 122 is about 1/30 of the thickness of the second dielectric layer 103.
- the total thickness of the IDT electrode 121 is substantially the same as the thickness of the second dielectric layer 103.
- the protective layer 104 is a layer for adjusting the frequency and is a layer for protecting the IDT electrode 121 from the external environment.
- the protective layer 104 is, for example, a SiN layer, and is provided on the second dielectric layer 103.
- the configuration of the surface acoustic wave element 10 shown in FIGS. 1 and 2 is an example, and is not limited thereto.
- the number and length of electrode fingers constituting the IDT electrode 121 are not limited to this.
- the IDT electrode 121 may not be a laminated structure of metal films but may be a single layer of metal films.
- the material which comprises each metal film and each protective layer is not limited to the material mentioned above.
- the IDT electrode 121 may be made of, for example, a metal or an alloy such as Ti, Al, Cu, Pt, Au, Ag, or Pd, and is made of a plurality of laminates made of the above metals or alloys. May be.
- the configurations of the second dielectric layer 103, the protective layer 104, and the first dielectric layer 122 are not limited to the above-described configurations, and for example, dielectric such as SiO 2 , SiN, AlN, polyimide, or a laminate thereof. It may be composed of a body or an insulator.
- the surface acoustic wave element 10 having the above-described configuration can suppress variation in specific band as compared with a comparative example that is a surface acoustic wave element using a Love wave.
- a comparative example that is a surface acoustic wave element using a Love wave.
- FIG. 3 is a cross-sectional view showing details of the substrate 501 and the IDT electrode 121 of the surface acoustic wave element 510 in the comparative example.
- the surface acoustic wave element 510 in the comparative example propagates a high frequency signal on the substrate 501 by using a Love wave generated on the substrate 501 when a high frequency signal is input to the IDT electrode 121.
- the substrate 501 includes a ⁇ 4 ° Y-cut X-propagating LiNbO 3 piezoelectric single crystal and has a structure for propagating a high-frequency signal using a Love wave.
- Other configurations are the same as those of the present embodiment, and description thereof is omitted.
- FIG. 4A and 4B are diagrams showing the vibration distribution (simulation result) of the cross section of the surface acoustic wave device, where FIG. 4A shows the vibration distribution when the Rayleigh wave is generated (embodiment), and FIG. 4B shows the Love wave. It is a vibration distribution (comparative example) when generating. A signal with a power of 1 W was input to each surface acoustic wave element.
- FIG. 4 shows the magnitude of the amplitude at each coordinate point.
- 4A which is a Rayleigh wave
- the amplitude of FIG. 4B which is a Love wave
- the H direction is composed of vibration components in the H direction.
- FIG. 4A a region with a large amplitude is represented by narrow-pitch hatched hatching, and a region with a small amplitude is represented by wide-pitch hatched hatching.
- the generation position of the maximum amplitude a1 exists not in the IDT electrode 121 but in the second dielectric layer 103.
- the difference between the maximum amplitude a1 and the minimum amplitude a2 is about 5 nm.
- FIG. 4B a region having a large amplitude is represented by narrow-pitch hatched hatching, and a region having a small amplitude is represented by wide-pitch hatched hatching.
- the generation position of the maximum amplitude a3 exists in the electrode finger.
- the difference between the maximum amplitude a3 and the minimum amplitude a4 is about 12 nm.
- the region having a large amplitude is located above the IDT electrode 121, and compared with the surface acoustic wave element 510. It is located away from the substrate 101 and the first dielectric layer 122. Therefore, even when the thickness variation of the first dielectric layer 122 occurs at the time of manufacturing, it is difficult to be affected by the thickness variation, and the variation in the ratio band of the plurality of surface acoustic wave elements 10 after manufacturing is suppressed.
- the surface acoustic wave element 10 is provided on the substrate 101 including the LiNbO 3 piezoelectric single crystal, the first dielectric layer 122 provided on the substrate 101, and the first dielectric layer 122.
- the high-frequency signal is propagated on the substrate 101 using the Rayleigh wave generated in the substrate 101 when a high-frequency signal is input to the IDT electrode 121.
- a region having a large amplitude during signal propagation is located away from the substrate 101 and the first dielectric layer 122. Therefore, even when the thickness variation of the first dielectric layer 122 occurs during manufacturing, it is possible to suppress variation in the ratio band in the plurality of surface acoustic wave elements 10 after manufacturing.
- the present invention can be widely used as a surface acoustic wave element having a small variation in specific band for an acoustic wave filter, a multiplexer, a high-frequency front-end circuit, a communication device, and the like.
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
[1.1 弾性表面波素子の構造]
弾性表面波素子は、例えば、入力された高周波信号をフィルタリングして出力する弾性表面波フィルタを構成する素子として用いられる。
上記構成を有する弾性表面波素子10は、ラブ波を利用した弾性表面波素子である比較例に比べて、比帯域のばらつきを抑制することができる。この理解を容易にするために、比較例における弾性表面波素子の構成を説明する。
以上、本発明の実施の形態に係る弾性表面波素子について説明したが、本発明は、上記実施の形態に限定されるものではない。上記実施の形態における任意の構成要素を組み合わせて実現される別の実施の形態や、上記実施の形態に対して本発明の主旨を逸脱しない範囲で当業者が思いつく各種変形を施して得られる変形例や、本発明に係る弾性表面波素子を内蔵した各種フィルタおよび各種機器も本発明に含まれる。
101 基板
101a 主面
103 第2誘電体層
104 保護層
121 IDT電極
121a、121b 櫛形電極
122 第1誘電体層
211、212、213、214、215 金属膜
Claims (5)
- LiNbO3圧電単結晶を含む基板と、前記基板上に設けられた第1誘電体層と、前記第1誘電体層上に設けられたIDT電極とを備え、
レイリー波を利用して、前記基板において前記高周波信号を伝搬する
弾性表面波素子。 - 前記LiNbO3圧電単結晶のYカット角は、100°以上160°以下である
請求項1に記載の弾性表面波素子。 - 前記第1誘電体層は、酸化ケイ素を含む
請求項1または2に記載の弾性表面波素子。 - さらに、前記IDT電極上に設けられた第2誘電体層を備え、
前記第1誘電体層は前記第2誘電体層よりも厚みが薄い
請求項1~3のいずれか1項に記載の弾性表面波素子。 - 前記IDT電極に高周波信号が入力された場合に、前記弾性表面波素子にて発生する振動の最大振幅の発生位置が、前記第2誘電体層内に存在する
請求項4に記載の弾性表面波素子。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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CN201880012879.8A CN110313130B (zh) | 2017-02-22 | 2018-02-15 | 声表面波元件 |
JP2019501269A JP6993400B2 (ja) | 2017-02-22 | 2018-02-15 | 弾性表面波素子 |
KR1020197021875A KR102304886B1 (ko) | 2017-02-22 | 2018-02-15 | 탄성표면파 소자 |
US16/540,096 US11863155B2 (en) | 2017-02-22 | 2019-08-14 | Surface acoustic wave element |
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JP2017031360 | 2017-02-22 | ||
JP2017-031360 | 2017-02-22 |
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US16/540,096 Continuation US11863155B2 (en) | 2017-02-22 | 2019-08-14 | Surface acoustic wave element |
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US (1) | US11863155B2 (ja) |
JP (1) | JP6993400B2 (ja) |
KR (1) | KR102304886B1 (ja) |
CN (1) | CN110313130B (ja) |
WO (1) | WO2018155305A1 (ja) |
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WO2022044869A1 (ja) * | 2020-08-27 | 2022-03-03 | 株式会社村田製作所 | 弾性波装置 |
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CN107112968B (zh) * | 2015-01-22 | 2020-10-16 | 株式会社村田制作所 | 弹性波装置的制造方法以及弹性波装置 |
US20220393665A1 (en) * | 2019-10-24 | 2022-12-08 | Kyocera Corporation | Acoustic wave device |
Citations (2)
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JPS529389A (en) * | 1975-07-14 | 1977-01-24 | Toshiba Corp | Surface acoustic wave device |
JP2015056712A (ja) * | 2013-09-11 | 2015-03-23 | スカイワークス・パナソニック フィルターソリューションズ ジャパン株式会社 | 弾性波素子とこれを用いた電子機器 |
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US4065734A (en) * | 1975-07-14 | 1977-12-27 | Tokyo Shibaura Electric Co., Ltd. | Elastic surface wave devices |
JPS59156013A (ja) * | 1983-02-25 | 1984-09-05 | Hiroshi Shimizu | 高結合弾性表面波圧電基板 |
JP3894917B2 (ja) * | 2003-11-12 | 2007-03-22 | 富士通メディアデバイス株式会社 | 弾性境界波デバイス及びその製造方法 |
JP4686472B2 (ja) * | 2004-10-26 | 2011-05-25 | 京セラ株式会社 | 弾性表面波素子及び通信装置 |
JP2008067289A (ja) | 2006-09-11 | 2008-03-21 | Fujitsu Media Device Kk | 弾性波デバイスおよびフィルタ |
JP2008078739A (ja) | 2006-09-19 | 2008-04-03 | Fujitsu Media Device Kk | 弾性波デバイスおよびフィルタ |
DE112011104653B4 (de) * | 2010-12-29 | 2016-07-21 | Murata Manufacturing Co., Ltd. | Oberflächenschallwellen-Bauelement |
JP5766457B2 (ja) * | 2011-02-09 | 2015-08-19 | 太陽誘電株式会社 | 弾性波デバイス及びその製造方法 |
DE102011011377B4 (de) * | 2011-02-16 | 2016-05-25 | Epcos Ag | Mit akustischen Wellen arbeitendes Bauelement |
CN103004085B (zh) * | 2011-06-23 | 2015-04-15 | 天工松下滤波方案日本有限公司 | 梯型弹性波滤波器及使用该弹性波滤波器的天线双工器 |
US9496846B2 (en) * | 2013-02-15 | 2016-11-15 | Skyworks Filter Solutions Japan Co., Ltd. | Acoustic wave device and electronic apparatus including same |
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WO2015191719A1 (en) * | 2014-06-10 | 2015-12-17 | Massachusetts Institute Of Technology | Unreleased coupled mems resonators and transmission filters |
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2018
- 2018-02-15 JP JP2019501269A patent/JP6993400B2/ja active Active
- 2018-02-15 KR KR1020197021875A patent/KR102304886B1/ko active IP Right Grant
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- 2018-02-15 WO PCT/JP2018/005286 patent/WO2018155305A1/ja active Application Filing
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JPS529389A (en) * | 1975-07-14 | 1977-01-24 | Toshiba Corp | Surface acoustic wave device |
JP2015056712A (ja) * | 2013-09-11 | 2015-03-23 | スカイワークス・パナソニック フィルターソリューションズ ジャパン株式会社 | 弾性波素子とこれを用いた電子機器 |
Cited By (1)
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WO2022044869A1 (ja) * | 2020-08-27 | 2022-03-03 | 株式会社村田製作所 | 弾性波装置 |
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Publication number | Publication date |
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JP6993400B2 (ja) | 2022-01-13 |
JPWO2018155305A1 (ja) | 2019-11-07 |
US11863155B2 (en) | 2024-01-02 |
US20190372551A1 (en) | 2019-12-05 |
CN110313130B (zh) | 2023-02-28 |
KR20190096425A (ko) | 2019-08-19 |
CN110313130A (zh) | 2019-10-08 |
KR102304886B1 (ko) | 2021-09-24 |
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